JP2007335862A5 - - Google Patents

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Publication number
JP2007335862A5
JP2007335862A5 JP2007151432A JP2007151432A JP2007335862A5 JP 2007335862 A5 JP2007335862 A5 JP 2007335862A5 JP 2007151432 A JP2007151432 A JP 2007151432A JP 2007151432 A JP2007151432 A JP 2007151432A JP 2007335862 A5 JP2007335862 A5 JP 2007335862A5
Authority
JP
Japan
Prior art keywords
forming
insulating member
transistor array
thin film
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007151432A
Other languages
English (en)
Japanese (ja)
Other versions
JP5268290B2 (ja
JP2007335862A (ja
Filing date
Publication date
Priority claimed from KR1020060052008A external-priority patent/KR101187205B1/ko
Application filed filed Critical
Publication of JP2007335862A publication Critical patent/JP2007335862A/ja
Publication of JP2007335862A5 publication Critical patent/JP2007335862A5/ja
Application granted granted Critical
Publication of JP5268290B2 publication Critical patent/JP5268290B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2007151432A 2006-06-09 2007-06-07 薄膜トランジスタ表示板及びその製造方法 Expired - Fee Related JP5268290B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2006-0052008 2006-06-09
KR1020060052008A KR101187205B1 (ko) 2006-06-09 2006-06-09 박막 트랜지스터 표시판 및 그 제조 방법

Publications (3)

Publication Number Publication Date
JP2007335862A JP2007335862A (ja) 2007-12-27
JP2007335862A5 true JP2007335862A5 (enExample) 2010-07-22
JP5268290B2 JP5268290B2 (ja) 2013-08-21

Family

ID=38521797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007151432A Expired - Fee Related JP5268290B2 (ja) 2006-06-09 2007-06-07 薄膜トランジスタ表示板及びその製造方法

Country Status (5)

Country Link
US (1) US7781774B2 (enExample)
EP (2) EP1865558A3 (enExample)
JP (1) JP5268290B2 (enExample)
KR (1) KR101187205B1 (enExample)
CN (1) CN101086996B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070053060A (ko) * 2005-11-19 2007-05-23 삼성전자주식회사 표시장치와 이의 제조방법
JP5151172B2 (ja) 2007-02-14 2013-02-27 ソニー株式会社 画素回路および表示装置
GB0803702D0 (en) 2008-02-28 2008-04-09 Isis Innovation Transparent conducting oxides
KR101124545B1 (ko) * 2008-02-29 2012-03-15 고려대학교 산학협력단 유기 박막 트랜지스터 및 그 제조 방법
CN101710586B (zh) * 2009-01-09 2011-12-28 深超光电（深圳）有限公司 提高开口率的储存电容及其制作方法
GB0915376D0 (en) 2009-09-03 2009-10-07 Isis Innovation Transparent conducting oxides
CN102034750B (zh) * 2009-09-25 2015-03-11 北京京东方光电科技有限公司 阵列基板及其制造方法
JP5621273B2 (ja) * 2010-02-23 2014-11-12 ソニー株式会社 薄膜トランジスタ構造体およびその製造方法、ならびに電子機器
KR102390961B1 (ko) * 2010-04-23 2022-04-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR101705367B1 (ko) * 2010-07-26 2017-02-10 엘지디스플레이 주식회사 유기박막트랜지스터의 제조방법
US9698347B2 (en) * 2012-08-02 2017-07-04 Joled Inc. Organic EL display panel and method for manufacturing same
JP6242121B2 (ja) * 2013-09-02 2017-12-06 株式会社ジャパンディスプレイ 発光素子表示装置及び発光素子表示装置の製造方法
KR102285384B1 (ko) * 2014-09-15 2021-08-04 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판, 그 제조방법 및 표시 장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100530758C (zh) * 1998-03-17 2009-08-19 精工爱普生株式会社 薄膜构图的衬底及其表面处理
JP3646510B2 (ja) * 1998-03-18 2005-05-11 セイコーエプソン株式会社 薄膜形成方法、表示装置およびカラーフィルタ
KR100333983B1 (ko) * 1999-05-13 2002-04-26 윤종용 광시야각 액정 표시 장치용 박막 트랜지스터 어레이 기판 및그의 제조 방법
WO2004032573A1 (en) * 2002-10-07 2004-04-15 Koninklijke Philips Electronics N.V. Method for manufacturing a light emitting display
JP3788467B2 (ja) * 2003-05-28 2006-06-21 セイコーエプソン株式会社 パターン形成方法、デバイス及びデバイスの製造方法、電気光学装置、電子機器並びにアクティブマトリクス基板の製造方法
KR100973811B1 (ko) * 2003-08-28 2010-08-03 삼성전자주식회사 유기 반도체를 사용한 박막 트랜지스터 표시판 및 그 제조방법
KR100549984B1 (ko) * 2003-12-29 2006-02-07 엘지.필립스 엘시디 주식회사 듀얼패널타입 유기전계발광 소자 및 그 제조방법
US7022534B2 (en) * 2004-01-14 2006-04-04 Osram Opto Semiconductors Gmbh Optimal bank height for inkjet printing
KR100658288B1 (ko) 2004-06-25 2006-12-14 삼성에스디아이 주식회사 개량된 구조의 트랜지스터를 구비한 화소 회로 및 유기발광 표시장치
JP4389747B2 (ja) * 2004-10-12 2009-12-24 セイコーエプソン株式会社 パターン形成方法および配線形成方法
KR101090250B1 (ko) * 2004-10-15 2011-12-06 삼성전자주식회사 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법
JP2006251120A (ja) * 2005-03-09 2006-09-21 Seiko Epson Corp 画素構造、アクティブマトリクス基板、アクティブマトリクス基板の製造方法、電気光学装置、並びに電子機器
JP5148086B2 (ja) * 2005-08-18 2013-02-20 三星電子株式会社 有機薄膜トランジスタ表示板

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