JP5268290B2 - 薄膜トランジスタ表示板及びその製造方法 - Google Patents

薄膜トランジスタ表示板及びその製造方法 Download PDF

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Publication number
JP5268290B2
JP5268290B2 JP2007151432A JP2007151432A JP5268290B2 JP 5268290 B2 JP5268290 B2 JP 5268290B2 JP 2007151432 A JP2007151432 A JP 2007151432A JP 2007151432 A JP2007151432 A JP 2007151432A JP 5268290 B2 JP5268290 B2 JP 5268290B2
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JP
Japan
Prior art keywords
thin film
film transistor
gate
organic semiconductor
transistor array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007151432A
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English (en)
Japanese (ja)
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JP2007335862A (ja
JP2007335862A5 (enExample
Inventor
承 奐 趙
泳 敏 金
根 圭 宋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
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Samsung Display Co Ltd
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Publication date
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Publication of JP2007335862A publication Critical patent/JP2007335862A/ja
Publication of JP2007335862A5 publication Critical patent/JP2007335862A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
JP2007151432A 2006-06-09 2007-06-07 薄膜トランジスタ表示板及びその製造方法 Expired - Fee Related JP5268290B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2006-0052008 2006-06-09
KR1020060052008A KR101187205B1 (ko) 2006-06-09 2006-06-09 박막 트랜지스터 표시판 및 그 제조 방법

Publications (3)

Publication Number Publication Date
JP2007335862A JP2007335862A (ja) 2007-12-27
JP2007335862A5 JP2007335862A5 (enExample) 2010-07-22
JP5268290B2 true JP5268290B2 (ja) 2013-08-21

Family

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Family Applications (1)

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JP2007151432A Expired - Fee Related JP5268290B2 (ja) 2006-06-09 2007-06-07 薄膜トランジスタ表示板及びその製造方法

Country Status (5)

Country Link
US (1) US7781774B2 (enExample)
EP (2) EP2690663A3 (enExample)
JP (1) JP5268290B2 (enExample)
KR (1) KR101187205B1 (enExample)
CN (1) CN101086996B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070053060A (ko) * 2005-11-19 2007-05-23 삼성전자주식회사 표시장치와 이의 제조방법
JP5151172B2 (ja) 2007-02-14 2013-02-27 ソニー株式会社 画素回路および表示装置
GB0803702D0 (en) 2008-02-28 2008-04-09 Isis Innovation Transparent conducting oxides
KR101124545B1 (ko) * 2008-02-29 2012-03-15 고려대학교 산학협력단 유기 박막 트랜지스터 및 그 제조 방법
CN101710586B (zh) * 2009-01-09 2011-12-28 深超光电（深圳）有限公司 提高开口率的储存电容及其制作方法
GB0915376D0 (en) 2009-09-03 2009-10-07 Isis Innovation Transparent conducting oxides
CN102034750B (zh) * 2009-09-25 2015-03-11 北京京东方光电科技有限公司 阵列基板及其制造方法
JP5621273B2 (ja) * 2010-02-23 2014-11-12 ソニー株式会社 薄膜トランジスタ構造体およびその製造方法、ならびに電子機器
CN103367167B (zh) * 2010-04-23 2020-04-10 株式会社半导体能源研究所 半导体装置的制造方法
KR101705367B1 (ko) * 2010-07-26 2017-02-10 엘지디스플레이 주식회사 유기박막트랜지스터의 제조방법
WO2014020914A1 (ja) * 2012-08-02 2014-02-06 パナソニック株式会社 有機ｅｌ表示パネルとその製造方法
JP6242121B2 (ja) * 2013-09-02 2017-12-06 株式会社ジャパンディスプレイ 発光素子表示装置及び発光素子表示装置の製造方法
KR102285384B1 (ko) * 2014-09-15 2021-08-04 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판, 그 제조방법 및 표시 장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1793650B1 (en) * 1998-03-17 2014-03-05 Seiko Epson Corporation Method for manufacturing a flat panel display
JP3646510B2 (ja) * 1998-03-18 2005-05-11 セイコーエプソン株式会社 薄膜形成方法、表示装置およびカラーフィルタ
KR100333983B1 (ko) * 1999-05-13 2002-04-26 윤종용 광시야각 액정 표시 장치용 박막 트랜지스터 어레이 기판 및그의 제조 방법
EP1559299A1 (en) * 2002-10-07 2005-08-03 Koninklijke Philips Electronics N.V. Method for manufacturing a light emitting display
JP3788467B2 (ja) * 2003-05-28 2006-06-21 セイコーエプソン株式会社 パターン形成方法、デバイス及びデバイスの製造方法、電気光学装置、電子機器並びにアクティブマトリクス基板の製造方法
KR100973811B1 (ko) * 2003-08-28 2010-08-03 삼성전자주식회사 유기 반도체를 사용한 박막 트랜지스터 표시판 및 그 제조방법
KR100549984B1 (ko) * 2003-12-29 2006-02-07 엘지.필립스 엘시디 주식회사 듀얼패널타입 유기전계발광 소자 및 그 제조방법
US7022534B2 (en) * 2004-01-14 2006-04-04 Osram Opto Semiconductors Gmbh Optimal bank height for inkjet printing
KR100658288B1 (ko) 2004-06-25 2006-12-14 삼성에스디아이 주식회사 개량된 구조의 트랜지스터를 구비한 화소 회로 및 유기발광 표시장치
JP4389747B2 (ja) * 2004-10-12 2009-12-24 セイコーエプソン株式会社 パターン形成方法および配線形成方法
KR101090250B1 (ko) * 2004-10-15 2011-12-06 삼성전자주식회사 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법
JP2006251120A (ja) * 2005-03-09 2006-09-21 Seiko Epson Corp 画素構造、アクティブマトリクス基板、アクティブマトリクス基板の製造方法、電気光学装置、並びに電子機器
JP5148086B2 (ja) * 2005-08-18 2013-02-20 三星電子株式会社 有機薄膜トランジスタ表示板

Also Published As

Publication number Publication date
EP2690663A3 (en) 2014-07-23
EP1865558A3 (en) 2013-02-13
EP1865558A2 (en) 2007-12-12
CN101086996B (zh) 2011-07-27
US20070284585A1 (en) 2007-12-13
KR20070117850A (ko) 2007-12-13
CN101086996A (zh) 2007-12-12
JP2007335862A (ja) 2007-12-27
EP2690663A2 (en) 2014-01-29
KR101187205B1 (ko) 2012-10-02
US7781774B2 (en) 2010-08-24

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