CN101086996B - 薄膜晶体管阵列面板及其制造方法 - Google Patents

薄膜晶体管阵列面板及其制造方法 Download PDF

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Publication number
CN101086996B
CN101086996B CN2006101486421A CN200610148642A CN101086996B CN 101086996 B CN101086996 B CN 101086996B CN 2006101486421 A CN2006101486421 A CN 2006101486421A CN 200610148642 A CN200610148642 A CN 200610148642A CN 101086996 B CN101086996 B CN 101086996B
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China
Prior art keywords
gate
opening
organic semiconductor
organic
electrode
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Expired - Fee Related
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CN2006101486421A
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English (en)
Chinese (zh)
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CN101086996A (zh
Inventor
赵承奂
金泳敏
宋根圭
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Samsung Display Co Ltd
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Samsung Electronics Co Ltd
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Publication of CN101086996A publication Critical patent/CN101086996A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
CN2006101486421A 2006-06-09 2006-11-20 薄膜晶体管阵列面板及其制造方法 Expired - Fee Related CN101086996B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020060052008 2006-06-09
KR10-2006-0052008 2006-06-09
KR1020060052008A KR101187205B1 (ko) 2006-06-09 2006-06-09 박막 트랜지스터 표시판 및 그 제조 방법

Publications (2)

Publication Number Publication Date
CN101086996A CN101086996A (zh) 2007-12-12
CN101086996B true CN101086996B (zh) 2011-07-27

Family

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Family Applications (1)

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CN2006101486421A Expired - Fee Related CN101086996B (zh) 2006-06-09 2006-11-20 薄膜晶体管阵列面板及其制造方法

Country Status (5)

Country Link
US (1) US7781774B2 (enExample)
EP (2) EP1865558A3 (enExample)
JP (1) JP5268290B2 (enExample)
KR (1) KR101187205B1 (enExample)
CN (1) CN101086996B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070053060A (ko) * 2005-11-19 2007-05-23 삼성전자주식회사 표시장치와 이의 제조방법
JP5151172B2 (ja) 2007-02-14 2013-02-27 ソニー株式会社 画素回路および表示装置
GB0803702D0 (en) 2008-02-28 2008-04-09 Isis Innovation Transparent conducting oxides
KR101124545B1 (ko) * 2008-02-29 2012-03-15 고려대학교 산학협력단 유기 박막 트랜지스터 및 그 제조 방법
CN101710586B (zh) * 2009-01-09 2011-12-28 深超光电（深圳）有限公司 提高开口率的储存电容及其制作方法
GB0915376D0 (en) 2009-09-03 2009-10-07 Isis Innovation Transparent conducting oxides
CN102034750B (zh) * 2009-09-25 2015-03-11 北京京东方光电科技有限公司 阵列基板及其制造方法
JP5621273B2 (ja) * 2010-02-23 2014-11-12 ソニー株式会社 薄膜トランジスタ構造体およびその製造方法、ならびに電子機器
KR102390961B1 (ko) * 2010-04-23 2022-04-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR101705367B1 (ko) * 2010-07-26 2017-02-10 엘지디스플레이 주식회사 유기박막트랜지스터의 제조방법
US9698347B2 (en) * 2012-08-02 2017-07-04 Joled Inc. Organic EL display panel and method for manufacturing same
JP6242121B2 (ja) * 2013-09-02 2017-12-06 株式会社ジャパンディスプレイ 発光素子表示装置及び発光素子表示装置の製造方法
KR102285384B1 (ko) * 2014-09-15 2021-08-04 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판, 그 제조방법 및 표시 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1258428A (zh) * 1998-03-17 2000-06-28 精工爱普生股份有限公司 薄膜构图的衬底及其表面处理
CN1761067A (zh) * 2004-10-15 2006-04-19 三星电子株式会社 有机薄膜晶体管阵列及其制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3646510B2 (ja) * 1998-03-18 2005-05-11 セイコーエプソン株式会社 薄膜形成方法、表示装置およびカラーフィルタ
KR100333983B1 (ko) * 1999-05-13 2002-04-26 윤종용 광시야각 액정 표시 장치용 박막 트랜지스터 어레이 기판 및그의 제조 방법
WO2004032573A1 (en) * 2002-10-07 2004-04-15 Koninklijke Philips Electronics N.V. Method for manufacturing a light emitting display
JP3788467B2 (ja) * 2003-05-28 2006-06-21 セイコーエプソン株式会社 パターン形成方法、デバイス及びデバイスの製造方法、電気光学装置、電子機器並びにアクティブマトリクス基板の製造方法
KR100973811B1 (ko) * 2003-08-28 2010-08-03 삼성전자주식회사 유기 반도체를 사용한 박막 트랜지스터 표시판 및 그 제조방법
KR100549984B1 (ko) * 2003-12-29 2006-02-07 엘지.필립스 엘시디 주식회사 듀얼패널타입 유기전계발광 소자 및 그 제조방법
US7022534B2 (en) * 2004-01-14 2006-04-04 Osram Opto Semiconductors Gmbh Optimal bank height for inkjet printing
KR100658288B1 (ko) 2004-06-25 2006-12-14 삼성에스디아이 주식회사 개량된 구조의 트랜지스터를 구비한 화소 회로 및 유기발광 표시장치
JP4389747B2 (ja) * 2004-10-12 2009-12-24 セイコーエプソン株式会社 パターン形成方法および配線形成方法
JP2006251120A (ja) * 2005-03-09 2006-09-21 Seiko Epson Corp 画素構造、アクティブマトリクス基板、アクティブマトリクス基板の製造方法、電気光学装置、並びに電子機器
JP5148086B2 (ja) * 2005-08-18 2013-02-20 三星電子株式会社 有機薄膜トランジスタ表示板

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1258428A (zh) * 1998-03-17 2000-06-28 精工爱普生股份有限公司 薄膜构图的衬底及其表面处理
CN1761067A (zh) * 2004-10-15 2006-04-19 三星电子株式会社 有机薄膜晶体管阵列及其制造方法

Also Published As

Publication number Publication date
EP1865558A3 (en) 2013-02-13
JP5268290B2 (ja) 2013-08-21
KR20070117850A (ko) 2007-12-13
US20070284585A1 (en) 2007-12-13
JP2007335862A (ja) 2007-12-27
EP1865558A2 (en) 2007-12-12
EP2690663A3 (en) 2014-07-23
KR101187205B1 (ko) 2012-10-02
US7781774B2 (en) 2010-08-24
EP2690663A2 (en) 2014-01-29
CN101086996A (zh) 2007-12-12

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Effective date: 20121226

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Effective date of registration: 20121226

Address after: South Korea Gyeonggi Do Yongin

Patentee after: SAMSUNG DISPLAY Co.,Ltd.

Address before: Gyeonggi Do Lingtong District South Korea Suwon Mei Tan 3 hole 416

Patentee before: Samsung Electronics Co.,Ltd.

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Granted publication date: 20110727

Termination date: 20211120