JP2007334317A - 液晶表示装置及び半導体装置 - Google Patents
液晶表示装置及び半導体装置 Download PDFInfo
- Publication number
- JP2007334317A JP2007334317A JP2007124361A JP2007124361A JP2007334317A JP 2007334317 A JP2007334317 A JP 2007334317A JP 2007124361 A JP2007124361 A JP 2007124361A JP 2007124361 A JP2007124361 A JP 2007124361A JP 2007334317 A JP2007334317 A JP 2007334317A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- liquid crystal
- film
- insulating film
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 315
- 239000004065 semiconductor Substances 0.000 title claims abstract description 174
- 239000000758 substrate Substances 0.000 claims abstract description 231
- 230000005684 electric field Effects 0.000 claims abstract description 65
- 239000010408 film Substances 0.000 abstract description 748
- 239000010409 thin film Substances 0.000 abstract description 71
- 239000012535 impurity Substances 0.000 description 142
- 239000010410 layer Substances 0.000 description 94
- 239000011229 interlayer Substances 0.000 description 84
- 239000000463 material Substances 0.000 description 71
- 238000000034 method Methods 0.000 description 61
- 230000000694 effects Effects 0.000 description 58
- 230000002829 reductive effect Effects 0.000 description 49
- 238000004519 manufacturing process Methods 0.000 description 46
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 36
- 230000006870 function Effects 0.000 description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 33
- 229910052710 silicon Inorganic materials 0.000 description 33
- 239000010703 silicon Substances 0.000 description 33
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 32
- 229910052814 silicon oxide Inorganic materials 0.000 description 31
- 229910052581 Si3N4 Inorganic materials 0.000 description 30
- 229910052751 metal Inorganic materials 0.000 description 30
- 239000002184 metal Substances 0.000 description 30
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 30
- 239000011159 matrix material Substances 0.000 description 25
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 24
- 229910010272 inorganic material Inorganic materials 0.000 description 23
- 239000011147 inorganic material Substances 0.000 description 23
- 230000008569 process Effects 0.000 description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 22
- 239000000470 constituent Substances 0.000 description 21
- 238000005530 etching Methods 0.000 description 20
- 239000011368 organic material Substances 0.000 description 20
- 229920002120 photoresistant polymer Polymers 0.000 description 20
- 229910052782 aluminium Inorganic materials 0.000 description 19
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 17
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 17
- 229910052760 oxygen Inorganic materials 0.000 description 17
- 239000001301 oxygen Substances 0.000 description 17
- 239000010936 titanium Substances 0.000 description 17
- 229910052757 nitrogen Inorganic materials 0.000 description 16
- 238000005247 gettering Methods 0.000 description 15
- 239000013078 crystal Substances 0.000 description 14
- 239000011521 glass Substances 0.000 description 14
- 239000002356 single layer Substances 0.000 description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 13
- 229910052698 phosphorus Inorganic materials 0.000 description 13
- 239000011574 phosphorus Substances 0.000 description 13
- 239000010949 copper Substances 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 11
- 229910052750 molybdenum Inorganic materials 0.000 description 11
- 239000011733 molybdenum Substances 0.000 description 11
- 229910052719 titanium Inorganic materials 0.000 description 11
- 239000011651 chromium Substances 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 239000012528 membrane Substances 0.000 description 10
- 239000010931 gold Substances 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- -1 resist Chemical class 0.000 description 9
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 9
- 239000011787 zinc oxide Substances 0.000 description 9
- 229910052779 Neodymium Inorganic materials 0.000 description 8
- 239000004642 Polyimide Substances 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 239000011810 insulating material Substances 0.000 description 8
- 229920001721 polyimide Polymers 0.000 description 8
- 239000005083 Zinc sulfide Substances 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- 230000010355 oscillation Effects 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 229910052984 zinc sulfide Inorganic materials 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000001678 irradiating effect Effects 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 229920003023 plastic Polymers 0.000 description 6
- 239000004033 plastic Substances 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000003086 colorant Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 239000000565 sealant Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 244000126211 Hericium coralloides Species 0.000 description 4
- 239000004952 Polyamide Substances 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 4
- 150000001408 amides Chemical class 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229920002647 polyamide Polymers 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 229910052691 Erbium Inorganic materials 0.000 description 3
- 229910052775 Thulium Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910052769 Ytterbium Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000002041 carbon nanotube Substances 0.000 description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000012788 optical film Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 229920001709 polysilazane Polymers 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229910019015 Mg-Ag Inorganic materials 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- JGIATAMCQXIDNZ-UHFFFAOYSA-N calcium sulfide Chemical compound [Ca]=S JGIATAMCQXIDNZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052839 forsterite Inorganic materials 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 2
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 2
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229910017464 nitrogen compound Inorganic materials 0.000 description 2
- 150000002830 nitrogen compounds Chemical class 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- KXJGSNRAQWDDJT-UHFFFAOYSA-N 1-acetyl-5-bromo-2h-indol-3-one Chemical compound BrC1=CC=C2N(C(=O)C)CC(=O)C2=C1 KXJGSNRAQWDDJT-UHFFFAOYSA-N 0.000 description 1
- MBXOOYPCIDHXGH-UHFFFAOYSA-N 3-butylpentane-2,4-dione Chemical compound CCCCC(C(C)=O)C(C)=O MBXOOYPCIDHXGH-UHFFFAOYSA-N 0.000 description 1
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- FCNCGHJSNVOIKE-UHFFFAOYSA-N 9,10-diphenylanthracene Chemical compound C1=CC=CC=C1C(C1=CC=CC=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 FCNCGHJSNVOIKE-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229920000298 Cellophane Polymers 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 241001175904 Labeo bata Species 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 101100476480 Mus musculus S100a8 gene Proteins 0.000 description 1
- 229910000583 Nd alloy Inorganic materials 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- 239000004693 Polybenzimidazole Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 125000005376 alkyl siloxane group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- BJXXCWDIBHXWOH-UHFFFAOYSA-N barium(2+);oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Ba+2].[Ba+2].[Ba+2].[Ba+2].[Ba+2].[Ta+5].[Ta+5].[Ta+5].[Ta+5] BJXXCWDIBHXWOH-UHFFFAOYSA-N 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- QHIWVLPBUQWDMQ-UHFFFAOYSA-N butyl prop-2-enoate;methyl 2-methylprop-2-enoate;prop-2-enoic acid Chemical compound OC(=O)C=C.COC(=O)C(C)=C.CCCCOC(=O)C=C QHIWVLPBUQWDMQ-UHFFFAOYSA-N 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- BVSHTEBQPBBCFT-UHFFFAOYSA-N gallium(iii) sulfide Chemical compound [S-2].[S-2].[S-2].[Ga+3].[Ga+3] BVSHTEBQPBBCFT-UHFFFAOYSA-N 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920002480 polybenzimidazole Polymers 0.000 description 1
- 229920002577 polybenzoxazole Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- XXCMBPUMZXRBTN-UHFFFAOYSA-N strontium sulfide Chemical compound [Sr]=S XXCMBPUMZXRBTN-UHFFFAOYSA-N 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007124361A JP2007334317A (ja) | 2006-05-16 | 2007-05-09 | 液晶表示装置及び半導体装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006135954 | 2006-05-16 | ||
| JP2007124361A JP2007334317A (ja) | 2006-05-16 | 2007-05-09 | 液晶表示装置及び半導体装置 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013090070A Division JP5376739B2 (ja) | 2006-05-16 | 2013-04-23 | 液晶表示装置 |
| JP2013104636A Division JP5542266B2 (ja) | 2006-05-16 | 2013-05-17 | 液晶表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007334317A true JP2007334317A (ja) | 2007-12-27 |
| JP2007334317A5 JP2007334317A5 (enExample) | 2010-07-15 |
Family
ID=38933795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007124361A Withdrawn JP2007334317A (ja) | 2006-05-16 | 2007-05-09 | 液晶表示装置及び半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007334317A (enExample) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009192932A (ja) * | 2008-02-15 | 2009-08-27 | Mitsubishi Electric Corp | 液晶表示装置、及びその製造方法 |
| JP2010026245A (ja) * | 2008-07-18 | 2010-02-04 | Sony Corp | 表示装置及びその駆動方法 |
| JP2011164661A (ja) * | 2011-06-02 | 2011-08-25 | Sony Corp | 液晶パネル及び電子機器 |
| JP2014146055A (ja) * | 2014-04-11 | 2014-08-14 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
| JP2015046580A (ja) * | 2013-07-31 | 2015-03-12 | 株式会社半導体エネルギー研究所 | マルチゲート構造のトランジスタ |
| JP2015529012A (ja) * | 2012-07-20 | 2015-10-01 | 京東方科技集團股▲ふん▼有限公司 | アレイ基板の製造方法、アレイ基板及び表示装置 |
| WO2015178447A1 (ja) * | 2014-05-23 | 2015-11-26 | Dic株式会社 | 画像表示装置およびそれに使用する配向材料 |
| JP2017097383A (ja) * | 2008-12-03 | 2017-06-01 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| US9829761B2 (en) | 2006-10-31 | 2017-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| JP2018013808A (ja) * | 2010-05-21 | 2018-01-25 | 株式会社半導体エネルギー研究所 | 液晶表示装置及び液晶表示装置の作製方法 |
| JP2018064117A (ja) * | 2009-05-01 | 2018-04-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9977287B2 (en) | 2008-12-19 | 2018-05-22 | Japan Display Inc. | Liquid crystal panel with pixel electrode pattern bent at bend point, and electronic apparatus |
| JP2019067985A (ja) * | 2017-10-04 | 2019-04-25 | 株式会社Ｊｏｌｅｄ | 半導体装置および表示装置 |
| JP2019140111A (ja) * | 2008-07-10 | 2019-08-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2022084598A (ja) * | 2014-02-07 | 2022-06-07 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP2023015041A (ja) * | 2009-07-18 | 2023-01-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN116449614A (zh) * | 2014-12-12 | 2023-07-18 | 群创光电股份有限公司 | 显示面板 |
Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH095793A (ja) * | 1996-07-31 | 1997-01-10 | Hitachi Ltd | 液晶表示装置 |
| JPH1062802A (ja) * | 1996-08-19 | 1998-03-06 | Oobayashi Seiko Kk | 液晶表示装置 |
| JPH10186405A (ja) * | 1996-12-27 | 1998-07-14 | Hitachi Ltd | アクティブマトリクス型液晶表示装置 |
| JP2000351974A (ja) * | 1999-04-07 | 2000-12-19 | Hitachi Ltd | 液晶表示装置 |
| WO2001018597A1 (en) * | 1999-09-07 | 2001-03-15 | Hitachi, Ltd | Liquid crystal display device |
| JP2001083540A (ja) * | 1999-09-03 | 2001-03-30 | Ind Technol Res Inst | ワイドビューアングル液晶ディスプレイの電極構造の製作方法 |
| WO2001071417A1 (fr) * | 2000-03-21 | 2001-09-27 | Hitachi, Ltd. | Affichage a cristaux liquides |
| JP2002221736A (ja) * | 2001-01-29 | 2002-08-09 | Hitachi Ltd | 液晶表示装置 |
| JP2002296615A (ja) * | 2001-01-29 | 2002-10-09 | Hitachi Ltd | 液晶表示装置 |
| JP2004317794A (ja) * | 2003-04-16 | 2004-11-11 | International Display Technology Kk | 画像表示パネルおよび画像表示装置 |
| JP2005084087A (ja) * | 2003-09-04 | 2005-03-31 | Toshiba Matsushita Display Technology Co Ltd | 液晶表示装置及びその製造方法 |
| JP2005106967A (ja) * | 2003-09-29 | 2005-04-21 | Hitachi Ltd | 液晶表示装置 |
| JP2005148602A (ja) * | 2003-11-19 | 2005-06-09 | Hitachi Displays Ltd | 液晶表示装置 |
| JP2005258176A (ja) * | 2004-03-12 | 2005-09-22 | Seiko Epson Corp | 電気光学装置及び電子機器 |
| JP2005345766A (ja) * | 2004-06-03 | 2005-12-15 | Shoka Kagi Kofun Yugenkoshi | 画素の発光領域と回路領域の配列方法 |
| JP2006013433A (ja) * | 2004-05-24 | 2006-01-12 | Toppan Printing Co Ltd | 薄膜トランジスタ |
-
2007
- 2007-05-09 JP JP2007124361A patent/JP2007334317A/ja not_active Withdrawn
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH095793A (ja) * | 1996-07-31 | 1997-01-10 | Hitachi Ltd | 液晶表示装置 |
| JPH1062802A (ja) * | 1996-08-19 | 1998-03-06 | Oobayashi Seiko Kk | 液晶表示装置 |
| JPH10186405A (ja) * | 1996-12-27 | 1998-07-14 | Hitachi Ltd | アクティブマトリクス型液晶表示装置 |
| JP2000351974A (ja) * | 1999-04-07 | 2000-12-19 | Hitachi Ltd | 液晶表示装置 |
| JP2001083540A (ja) * | 1999-09-03 | 2001-03-30 | Ind Technol Res Inst | ワイドビューアングル液晶ディスプレイの電極構造の製作方法 |
| WO2001018597A1 (en) * | 1999-09-07 | 2001-03-15 | Hitachi, Ltd | Liquid crystal display device |
| WO2001071417A1 (fr) * | 2000-03-21 | 2001-09-27 | Hitachi, Ltd. | Affichage a cristaux liquides |
| JP2002296615A (ja) * | 2001-01-29 | 2002-10-09 | Hitachi Ltd | 液晶表示装置 |
| JP2002221736A (ja) * | 2001-01-29 | 2002-08-09 | Hitachi Ltd | 液晶表示装置 |
| JP2004317794A (ja) * | 2003-04-16 | 2004-11-11 | International Display Technology Kk | 画像表示パネルおよび画像表示装置 |
| JP2005084087A (ja) * | 2003-09-04 | 2005-03-31 | Toshiba Matsushita Display Technology Co Ltd | 液晶表示装置及びその製造方法 |
| JP2005106967A (ja) * | 2003-09-29 | 2005-04-21 | Hitachi Ltd | 液晶表示装置 |
| JP2005148602A (ja) * | 2003-11-19 | 2005-06-09 | Hitachi Displays Ltd | 液晶表示装置 |
| JP2005258176A (ja) * | 2004-03-12 | 2005-09-22 | Seiko Epson Corp | 電気光学装置及び電子機器 |
| JP2006013433A (ja) * | 2004-05-24 | 2006-01-12 | Toppan Printing Co Ltd | 薄膜トランジスタ |
| JP2005345766A (ja) * | 2004-06-03 | 2005-12-15 | Shoka Kagi Kofun Yugenkoshi | 画素の発光領域と回路領域の配列方法 |
Cited By (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11372298B2 (en) | 2006-10-31 | 2022-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| US11860495B2 (en) | 2006-10-31 | 2024-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| US12276891B2 (en) | 2006-10-31 | 2025-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| US10698277B2 (en) | 2006-10-31 | 2020-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| US11016354B2 (en) | 2006-10-31 | 2021-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| US9829761B2 (en) | 2006-10-31 | 2017-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| US11592717B2 (en) | 2006-10-31 | 2023-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| JP2009192932A (ja) * | 2008-02-15 | 2009-08-27 | Mitsubishi Electric Corp | 液晶表示装置、及びその製造方法 |
| US8319928B2 (en) | 2008-02-15 | 2012-11-27 | Mitsubishi Electric Corporation | Liquid crystal display device and method of manufacturing the same |
| US11557697B2 (en) | 2008-07-10 | 2023-01-17 | Semiconductor Energy Laboratory Co., Ltd. | Flexible light emitting device comprising a polyimide resin |
| JP2019140111A (ja) * | 2008-07-10 | 2019-08-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US11101407B2 (en) | 2008-07-10 | 2021-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device sealed in a fibrous body to improve manufacturability and electronic device including the light emitting device |
| US11908976B2 (en) | 2008-07-10 | 2024-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic device |
| JP2010026245A (ja) * | 2008-07-18 | 2010-02-04 | Sony Corp | 表示装置及びその駆動方法 |
| US8902141B2 (en) | 2008-07-18 | 2014-12-02 | Japan Display, Inc. | Display apparatus and driving method |
| JP2017097383A (ja) * | 2008-12-03 | 2017-06-01 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| US10095071B2 (en) | 2008-12-03 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device including transistor which includes oxide semiconductor |
| US10838264B2 (en) | 2008-12-03 | 2020-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| JP7662741B2 (ja) | 2008-12-03 | 2025-04-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US11175542B2 (en) | 2008-12-03 | 2021-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| JP2023178423A (ja) * | 2008-12-03 | 2023-12-14 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| US11567369B2 (en) | 2008-12-19 | 2023-01-31 | Japan Display Inc. | Pixel electrode of fringe field switching liquid crystal display device having a plurality of bend portions |
| US10310331B2 (en) | 2008-12-19 | 2019-06-04 | Japan Display Inc. | Liquid crystal panel with pixel electrode pattern bent at bend point, and electronic apparatus |
| US9977287B2 (en) | 2008-12-19 | 2018-05-22 | Japan Display Inc. | Liquid crystal panel with pixel electrode pattern bent at bend point, and electronic apparatus |
| US11029567B2 (en) | 2008-12-19 | 2021-06-08 | Japan Display Inc. | Liquid crystal panel having an electrode with a bent portion |
| US11982907B2 (en) | 2008-12-19 | 2024-05-14 | Japan Display Inc. | Liquid crystal panel with electrode having bent portion |
| JP2018064117A (ja) * | 2009-05-01 | 2018-04-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2023015041A (ja) * | 2009-07-18 | 2023-01-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2018013808A (ja) * | 2010-05-21 | 2018-01-25 | 株式会社半導体エネルギー研究所 | 液晶表示装置及び液晶表示装置の作製方法 |
| JP2025078665A (ja) * | 2010-05-21 | 2025-05-20 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP2011164661A (ja) * | 2011-06-02 | 2011-08-25 | Sony Corp | 液晶パネル及び電子機器 |
| JP2015529012A (ja) * | 2012-07-20 | 2015-10-01 | 京東方科技集團股▲ふん▼有限公司 | アレイ基板の製造方法、アレイ基板及び表示装置 |
| JP2015046580A (ja) * | 2013-07-31 | 2015-03-12 | 株式会社半導体エネルギー研究所 | マルチゲート構造のトランジスタ |
| JP7290764B2 (ja) | 2014-02-07 | 2023-06-13 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP2022084598A (ja) * | 2014-02-07 | 2022-06-07 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP2014146055A (ja) * | 2014-04-11 | 2014-08-14 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
| WO2015178447A1 (ja) * | 2014-05-23 | 2015-11-26 | Dic株式会社 | 画像表示装置およびそれに使用する配向材料 |
| JPWO2015178447A1 (ja) * | 2014-05-23 | 2017-04-20 | Dic株式会社 | 画像表示装置およびそれに使用する配向材料 |
| CN116449614A (zh) * | 2014-12-12 | 2023-07-18 | 群创光电股份有限公司 | 显示面板 |
| JP2019067985A (ja) * | 2017-10-04 | 2019-04-25 | 株式会社Ｊｏｌｅｄ | 半導体装置および表示装置 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6591719B2 (ja) | 液晶表示装置 | |
| JP5148912B2 (ja) | 液晶表示装置及び半導体装置、並びに電子機器 | |
| JP2007334317A (ja) | 液晶表示装置及び半導体装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100507 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100527 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120124 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120125 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120319 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120814 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120919 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130319 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130507 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130625 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20130711 |