JP2007334293A - 修正構造および能動素子アレイ基板 - Google Patents
修正構造および能動素子アレイ基板 Download PDFInfo
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- JP2007334293A JP2007334293A JP2007042926A JP2007042926A JP2007334293A JP 2007334293 A JP2007334293 A JP 2007334293A JP 2007042926 A JP2007042926 A JP 2007042926A JP 2007042926 A JP2007042926 A JP 2007042926A JP 2007334293 A JP2007334293 A JP 2007334293A
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- 239000000758 substrate Substances 0.000 title claims abstract description 84
- 239000004020 conductor Substances 0.000 claims description 114
- 239000000463 material Substances 0.000 claims description 26
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 6
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 6
- 238000010276 construction Methods 0.000 claims 1
- 239000002989 correction material Substances 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 115
- 238000000034 method Methods 0.000 description 17
- 239000010409 thin film Substances 0.000 description 15
- 230000008569 process Effects 0.000 description 12
- 239000000470 constituent Substances 0.000 description 11
- 230000004048 modification Effects 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001182 laser chemical vapour deposition Methods 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 210000002858 crystal cell Anatomy 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136272—Auxiliary lines
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
Abstract
【解決手段】修正構造300であって、基板110と、少なくとも1つの第1導体ライン310と、第1絶縁層320と、少なくとも1つの第2導体ライン330と、修正接続層350とを備える修正構造300を提供する。少なくとも1つの第1導体ライン310は基板110上に設けられている。第1絶縁層320は、第1導体ライン310を被覆するように基板110の上に設けられている。第2導体ライン330は第1絶縁層320の上に設けられている。第2絶縁層340は第2導体ライン330と第1絶縁層320を被覆する。修正接続層350は第2絶縁層340上に設けられている。具体的に言うと、修正接続層350は第1導体ライン310と電気的に接続されている。修正接続層350は第2導体ライン330と重複しているが、第2導体ライン330とは電気的に絶縁されている。
【選択図】図2B
Description
1.本発明に関する修正構造によると、修正接続層と第2導体ラインの間に存在するのが第2絶縁層1層だけである。レーザ修正プロセスが実行されると、レーザは容易に第2絶縁層を貫通するように焼却することができ、修正接続層と第2導体ラインを結合することができる。このため、レーザ修正プロセス後に未修正の箇所が残ることはほとんどない。つまり、上記の修正構造は修正歩留まりを向上させることができる。
2.能動素子アレイ基板上には本発明に係る修正構造を製造することによって、該能動素子アレイ基板の修正歩留まりが高くなる。
3.本発明に係る修正構造および能動素子アレイ基板の製造方法は、既存のプロセスとの間で互換性を有する。このため、変更する必要があるフォトマスクはほとんどなく、別の装置を用意する必要がない。
4.本発明に係る修正構造は、ディスプレイパネルおよび/またはディスプレイモジュールに応用することができる。
Claims (13)
- 修正構造であって、
基板と、
前記基板上に設けられた少なくとも1つの第1導体ラインと、
前記第1導体ラインを被覆するように前記基板の上に設けられた第1絶縁層と、
前記第1絶縁層の上に設けられた少なくとも1つの第2導体ラインと、
前記第2導体ラインと前記第1絶縁層を被覆する第2絶縁層と、
前記第2絶縁層上に設けられた修正接続層であって、前記第1導体ラインと電気的に接続され且つ前記第2導体ラインと重複し、前記第2導体ラインとは電気的に絶縁されている修正接続層とを
備える修正構造。 - 前記第2絶縁層の厚みは、約1500Åと5000Åの間である
請求項1に記載の修正構造。 - 前記第1絶縁層および前記第2絶縁層を貫通する、少なくとも1つの接続開口部をさらに備え、当該少なくとも1つの接続開口部を介して、前記修正接続層の一部が前記第1導体ラインと電気的に接続されている
請求項1に記載の修正構造。 - 前記第1絶縁層と前記第2導体ラインの間に設けられた半導体層
をさらに備える請求項1に記載の修正構造。 - 前記第2導体ラインの一部分は前記第1導体ラインを被覆する
請求項1に記載の修正構造。 - 前記修正接続層を構成している材料は、インジウムスズ酸化物(ITO)、インジウム亜鉛酸化物(IZO)、金属、合金またはITO、IZO、金属および合金の組み合わせを含む
請求項1に記載の修正構造。 - 能動素子アレイ基板であって、
表示領域および周辺回路領域を有する基板と、
前記基板の前記表示領域に設けられたピクセルアレイと、
前記基板の前記周辺回路領域に設けられた修正構造であって、前記ピクセルアレイと電気的に接続された修正構造とを備え、
当該修正構造は、
少なくとも1つの第1導体ラインと、
前記第1導体ラインを被覆する第1絶縁層と、
前記第1絶縁層の上に設けられた少なくとも1つの第2導体ラインと、
前記第2導体ラインと前記第1絶縁層を被覆する第2絶縁層と、
前記第2絶縁層上に設けられた修正接続層であって、前記第1導体ラインと電気的に接続され且つ前記第2導体ラインと重複し、前記第2導体ラインとは電気的に絶縁されている修正接続層とを有する
能動素子アレイ基板。 - 前記第2絶縁層の厚みは、約1500Åと5000Åの間である
請求項7に記載の能動素子アレイ基板。 - 前記修正構造は、前記第1絶縁層および前記第2絶縁層を貫通する、少なくとも1つの接続開口部をさらに有し、当該少なくとも1つの接続開口部を介して、前記修正接続層の一部が前記第1導体ラインと電気的に接続されている
請求項7に記載の能動素子アレイ基板。 - 前記ピクセルアレイは、複数のスキャンラインと、複数のデータラインと、複数の能動素子と、複数のピクセル電極とを有し、前記修正構造は複数の第2導体ラインを有し、各データラインは前記修正構造の前記第2導体ラインのうち対応する1つと電気的に接続され、各能動素子は前記スキャンラインのうち対応する1つおよび前記データラインのうち対応する1つと電気的に接続され、各ピクセル電極は前記能動素子のうち対応する1つと電気的に接続されている
請求項7に記載の能動素子アレイ基板。 - 前記修正構造はさらに、前記第1絶縁層と前記第2導体ラインの間に設けられた半導体層を有する
請求項7に記載の能動素子アレイ基板。 - 前記第2導体ラインの一部分は前記第1導体ラインを被覆する
請求項7に記載の能動素子アレイ基板。 - 前記修正接続層を構成している材料は、インジウムスズ酸化物(ITO)、インジウム亜鉛酸化物(IZO)、金属、合金またはITO、IZO、金属および合金の組み合わせを含む
請求項12に記載の能動素子アレイ基板。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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TW095121866A TWI337273B (en) | 2006-06-19 | 2006-06-19 | Repair structrue and active device array substrate |
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JP2007334293A true JP2007334293A (ja) | 2007-12-27 |
JP4592717B2 JP4592717B2 (ja) | 2010-12-08 |
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US (1) | US8274104B2 (ja) |
JP (1) | JP4592717B2 (ja) |
TW (1) | TWI337273B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8493525B2 (en) | 2010-10-28 | 2013-07-23 | Samsung Display Co., Ltd. | Thin film transistor array panel, liquid crystal display, method for repairing the same, color filter array panel and method for manufacturing the same |
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CN103207488B (zh) * | 2013-03-27 | 2015-11-11 | 北京京东方光电科技有限公司 | 一种阵列基板及其维修方法、显示装置 |
CN104183502A (zh) * | 2014-08-26 | 2014-12-03 | 湖南普照爱伯乐平板显示器件有限公司 | 一种薄膜晶体管制作方法、系统及薄膜晶体管 |
TWI566228B (zh) * | 2015-01-23 | 2017-01-11 | 友達光電股份有限公司 | 主動元件陣列基板及其檢測方法 |
CN105970210B (zh) * | 2016-05-26 | 2018-03-30 | 京东方科技集团股份有限公司 | 一种阵列基板的断线修复装置及阵列基板的断线修复方法 |
CN106802523B (zh) * | 2017-01-25 | 2019-10-29 | 星源电子科技(深圳)有限公司 | 修复液晶面板显性横向线性不良的方法 |
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JPH07175085A (ja) * | 1993-12-21 | 1995-07-14 | Sanyo Electric Co Ltd | アクティブマトリクス型液晶表示装置 |
JPH09101539A (ja) * | 1995-10-04 | 1997-04-15 | Fujitsu Ltd | 薄膜トランジスタマトリクスの断線修正方法 |
JPH10170946A (ja) * | 1996-12-16 | 1998-06-26 | Fujitsu Ltd | 液晶表示装置 |
JP2007241289A (ja) * | 2006-03-08 | 2007-09-20 | Samsung Electronics Co Ltd | 表示装置及びその製造方法 |
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JP3884625B2 (ja) | 2001-03-14 | 2007-02-21 | シャープ株式会社 | 液晶表示装置及びその欠陥修復方法 |
JP4011002B2 (ja) | 2003-09-11 | 2007-11-21 | シャープ株式会社 | アクティブ基板、表示装置およびその製造方法 |
KR101090253B1 (ko) * | 2004-10-06 | 2011-12-06 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 이를 포함하는 액정 표시 장치 |
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- 2006-12-06 US US11/567,217 patent/US8274104B2/en active Active
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07175085A (ja) * | 1993-12-21 | 1995-07-14 | Sanyo Electric Co Ltd | アクティブマトリクス型液晶表示装置 |
JPH09101539A (ja) * | 1995-10-04 | 1997-04-15 | Fujitsu Ltd | 薄膜トランジスタマトリクスの断線修正方法 |
JPH10170946A (ja) * | 1996-12-16 | 1998-06-26 | Fujitsu Ltd | 液晶表示装置 |
JP2007241289A (ja) * | 2006-03-08 | 2007-09-20 | Samsung Electronics Co Ltd | 表示装置及びその製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8493525B2 (en) | 2010-10-28 | 2013-07-23 | Samsung Display Co., Ltd. | Thin film transistor array panel, liquid crystal display, method for repairing the same, color filter array panel and method for manufacturing the same |
US8760598B2 (en) | 2010-10-28 | 2014-06-24 | Samsung Display Co., Ltd. | Thin film transistor array panel, liquid crystal display, method for repairing the same, color filter array panel and method for manufacturing the same |
US9093593B2 (en) | 2010-10-28 | 2015-07-28 | Samsung Display Co., Ltd. | Thin film transistor array panel, liquid crystal display, method for repairing the same, color filter array panel and method for manufacturing the same |
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US20070290187A1 (en) | 2007-12-20 |
JP4592717B2 (ja) | 2010-12-08 |
TW200801656A (en) | 2008-01-01 |
US8274104B2 (en) | 2012-09-25 |
TWI337273B (en) | 2011-02-11 |
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