JP2007324205A - Light emitting device - Google Patents

Light emitting device Download PDF

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JP2007324205A
JP2007324205A JP2006150017A JP2006150017A JP2007324205A JP 2007324205 A JP2007324205 A JP 2007324205A JP 2006150017 A JP2006150017 A JP 2006150017A JP 2006150017 A JP2006150017 A JP 2006150017A JP 2007324205 A JP2007324205 A JP 2007324205A
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light emitting
emitting device
light
wiring
substrate
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Kinji Hayashi
欣司 林
Takemasa Yasukawa
武正 安川
Kazuhiro Sakai
和宏 酒井
Toshimasa Hayashi
稔真 林
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H01L2224/48228—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad being disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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Abstract

<P>PROBLEM TO BE SOLVED: To prevent increase of manufacturing cost while a reflection factor is improved on light of a substrate-side. <P>SOLUTION: A light emitting device is provided with wiring parts 22 and 23 formed on a substrate 2 by a prescribed pattern, a solder resist 21 coating the wiring parts 22 and 23 and having the reflection factor higher than the wiring parts 22 and 23, and an LED chip 3 which is loaded on the solder resist 21 on the wiring part 22 and is electrically connected to the wiring parts 22 and 23 by wire 4. The solder resist 21 has an opening 21a where the wiring parts 25 and 26 are exposed with wire 4 in the wiring parts 22 and 23. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、発光素子が配線部を被覆するレジスト部上に搭載される発光装置に関する。   The present invention relates to a light emitting device in which a light emitting element is mounted on a resist portion that covers a wiring portion.

従来から、基板表面の配線部を除く領域に白色のソルダーレジストが塗布され、配線部に発光素子としてＬＥＤチップを搭載するものが知られている（例えば、特許文献１参照）。この種の発光装置では、ソルダーレジストを白色とすることにより、光の反射率が高められている。   Conventionally, it is known that a white solder resist is applied to a region other than the wiring portion on the surface of the substrate, and an LED chip is mounted on the wiring portion as a light emitting element (see, for example, Patent Document 1). In this type of light emitting device, the reflectance of light is increased by making the solder resist white.

特許文献１に記載の発光装置では、ＬＥＤチップが搭載される第１の配線部と、ＬＥＤチップとボンディングワイヤにより電気的に接続される第２の配線部とが、基板上に離隔して形成され、第１及び第２の配線部を除く部分がソルダーレジストにより覆われている。ＬＥＤチップ及びボンディングワイヤは、ポッティングにより形成された透明樹脂によって保護されている。   In the light-emitting device described in Patent Document 1, a first wiring portion on which an LED chip is mounted and a second wiring portion that is electrically connected to the LED chip by a bonding wire are formed apart from each other on the substrate. The portions excluding the first and second wiring portions are covered with the solder resist. The LED chip and the bonding wire are protected by a transparent resin formed by potting.

また、発光素子として青色ＬＥＤを用い、青色ＬＥＤを基板にダイボンドペーストで固着し、このダイボンドペーストに白色フィラーを混入させたものが知られている（例えば、特許文献２参照）。特許文献２に記載の発光装置では、発光素子として緑色ＬＥＤ及び赤色ＬＥＤも備えられ、緑色ＬＥＤ及び赤色ＬＥＤの発光層よりも青色ＬＥＤの発光層が高くなるように、青色ＬＥＤのダイボンドペーストが厚くされている。
特開平５−２９９７０２号公報 特開平７−２８８３４１号公報 Further, a blue LED is used as a light emitting element, the blue LED is fixed to a substrate with a die bond paste, and a white filler is mixed in the die bond paste is known (see, for example, Patent Document 2). In the light emitting device described in Patent Document 2, a green LED and a red LED are also provided as light emitting elements, and the blue LED die bond paste is thick so that the light emitting layer of the blue LED is higher than the light emitting layer of the green LED and the red LED. Has been.
JP-A-5-299702 JP 7-288341 A

しかしながら、特許文献１に記載の発光装置では、発光素子が配線部に搭載されることから、発光素子から真下に出射した光は配線部にて反射する。これにより、配線部の表層に反射率の低い材質が用いられると、光取り出し効率が低下するという問題点がある。   However, in the light emitting device described in Patent Document 1, since the light emitting element is mounted on the wiring portion, the light emitted directly from the light emitting element is reflected by the wiring portion. Accordingly, when a material having a low reflectance is used for the surface layer of the wiring portion, there is a problem that the light extraction efficiency is lowered.

また、特許文献２に記載の発光装置では、青色ＬＥＤのダイボンドペーストを厚くしているため、発光素子の実装が困難となって製造コストが嵩むという問題点がある。   Further, in the light emitting device described in Patent Document 2, since the die bonding paste of the blue LED is thickened, there is a problem that it is difficult to mount the light emitting element and the manufacturing cost increases.

本発明は、前記事情に鑑みてなされたものであり、その目的とするところは、基板側の光の反射率を高めることでき、製造コストが嵩むことのない発光装置を提供することにある。   The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a light emitting device that can increase the reflectance of light on the substrate side and does not increase the manufacturing cost.

前記目的を達成するため、本発明では、
基板上に所定のパターンで形成された配線部と、
前記配線部を被覆し、前記配線部よりも高い反射率を有するレジスト部と、
前記配線部上の前記レジスト部上に搭載され、前記配線部とワイヤにより電気的に接続される発光素子と、を備え、
前記レジスト部は、前記配線部における前記ワイヤとの接続部を露出させる開口を有することを特徴とする発光装置が提供される。 In order to achieve the above object, in the present invention,
A wiring portion formed in a predetermined pattern on the substrate;
A resist part that covers the wiring part and has a higher reflectance than the wiring part;
A light emitting element mounted on the resist portion on the wiring portion and electrically connected to the wiring portion by a wire; and
The light-emitting device is provided, wherein the resist portion has an opening that exposes a connection portion with the wire in the wiring portion.

この発光装置によれば、レジスト部により配線部の素子搭載部が覆われているので、発光素子から基板側に出射した光はレジスト部にて反射する。このレジスト部は配線部よりも高い反射率であるので、レジスト部を介さずに配線部に発光素子を搭載する従来のものよりも反射率を向上させることができる。また、配線部がワイヤとの接続部を除いてレジスト部により覆われているので、素子搭載部以外の部分でも高い反射率を得ることができる。
また、従来のようにダイボンドペーストを過度に厚くする必要はなく、製造コストが嵩むようなことはない。
さらに、発光素子にて生じた熱はレジスト部を介して配線部に伝達され、配線部から発光素子の熱を逃がすことができ、所定の放熱性能を確保することができる。 According to this light emitting device, since the element mounting portion of the wiring portion is covered by the resist portion, the light emitted from the light emitting element to the substrate side is reflected by the resist portion. Since the resist portion has a higher reflectance than the wiring portion, the reflectance can be improved as compared with the conventional one in which the light emitting element is mounted on the wiring portion without using the resist portion. Moreover, since the wiring part is covered with the resist part except for the connection part with the wire, a high reflectance can be obtained even in parts other than the element mounting part.
Further, it is not necessary to make the die bond paste excessively thick as in the prior art, and the manufacturing cost does not increase.
Furthermore, the heat generated in the light emitting element is transmitted to the wiring part through the resist part, and the heat of the light emitting element can be released from the wiring part, and a predetermined heat dissipation performance can be ensured.

また、上記発光装置において、
前記レジスト部は、白色粉末を含有することにより白色を呈していることが好ましい。 In the above light emitting device,
The resist portion preferably has a white color by containing a white powder.

この発光装置によれば、レジスト部を白色とすることにより、レジスト部の反射率を配線部よりも高くすることができる。   According to this light-emitting device, the resist portion can be made white so that the reflectance of the resist portion can be made higher than that of the wiring portion.

また、上記発光装置において、
前記発光素子は、前記レジスト部上に設けられる透明のダイボンドペースト上に搭載されることが好ましい。 In the above light emitting device,
The light emitting element is preferably mounted on a transparent die bond paste provided on the resist portion.

この発光装置によれば、ダイボンドペーストが透明であるので、発光素子から側方に出射される光のダイボンドペーストのフィレット部における反射を抑制することができる。また、ダイボンドペースト及びレジスト部をともに樹脂とすることにより、金属の配線部に樹脂のダイボンドペーストにより発光素子を搭載するものに比して、発光素子の基板に対する接着性、密着性等が向上する。   According to this light emitting device, since the die bond paste is transparent, reflection of light emitted from the light emitting element to the side at the fillet portion of the die bond paste can be suppressed. Further, by using both the die bond paste and the resist portion as a resin, the adhesion and adhesion of the light emitting element to the substrate are improved as compared with the case where the light emitting element is mounted on the metal wiring portion by the resin die bond paste. .

また、上記発光装置において、
前記発光素子は、前記レジスト部上に設けられる白色のダイボンドペースト上に搭載されることが好ましい。 In the above light emitting device,
It is preferable that the light emitting element is mounted on a white die bond paste provided on the resist portion.

この発光装置によれば、ダイボンドペーストが白色であるので、発光素子から基板側に出射した光の一部はダイボンドペーストにて反射する。そして、ダイボンドペーストを透過した光は、レジスト部にて反射する。これにより、発光素子から出射する光を確実に反射させることができる。   According to this light emitting device, since the die bond paste is white, part of the light emitted from the light emitting element to the substrate is reflected by the die bond paste. And the light which permeate | transmitted the die-bonding paste reflects in a resist part. Thereby, the light radiate | emitted from a light emitting element can be reflected reliably.

また、上記発光装置において、
前記発光素子は青色光を発し、前記基板の前記配線部の表層は金であることが好ましい。 In the above light emitting device,
Preferably, the light emitting element emits blue light, and a surface layer of the wiring portion of the substrate is gold.

また、上記発光装置において、
前記発光素子を複数備えたことが好ましい。 In the above light emitting device,
It is preferable that a plurality of the light emitting elements are provided.

本発明によれば、配線部の素子搭載部の表面にレジスト部を設けたので、基板側の光の反射率を高めることができ、製造コストが嵩むこともない。   According to the present invention, since the resist portion is provided on the surface of the element mounting portion of the wiring portion, the reflectance of light on the substrate side can be increased, and the manufacturing cost does not increase.

図１から図３は本発明の一実施形態を示すもので、図１は発光装置の概略外観斜視図である。   1 to 3 show an embodiment of the present invention, and FIG. 1 is a schematic external perspective view of a light emitting device.

図１に示すように、発光装置１は、実装面にソルダーレジスト部２１及び配線部２２，２３が形成された基板２と、基板２の配線部２２の素子搭載部２４に搭載される発光素子としてのＬＥＤチップ３と、を備えている。この発光装置１は、ＬＥＤチップ３の電極３１，３２と基板２の配線部２２，２３とが例えば金（Ａｕ）からなるボンディングワイヤ４により直接接続されるチップオンボード（ＣＯＢ）の構成をとっている。ＬＥＤチップ３は基板２に突出形成されたレンズ部５により覆われている。この発光装置１は、例えばディスプレイ装置のバックライト光源として用いられる。ソルダーレジスト部２１は、配線部２２，２３におけるボンディングワイヤ４との接続部２５，２６を露出させる開口２１ａを有している。本実施形態においては、開口２１ａは平面視で円形に形成される。   As shown in FIG. 1, a light emitting device 1 includes a substrate 2 having a solder resist portion 21 and wiring portions 22 and 23 formed on a mounting surface, and a light emitting element mounted on an element mounting portion 24 of the wiring portion 22 of the substrate 2. As an LED chip 3. The light emitting device 1 has a chip-on-board (COB) configuration in which the electrodes 31 and 32 of the LED chip 3 and the wiring portions 22 and 23 of the substrate 2 are directly connected by bonding wires 4 made of, for example, gold (Au). ing. The LED chip 3 is covered with a lens portion 5 formed to protrude from the substrate 2. The light emitting device 1 is used as a backlight light source of a display device, for example. The solder resist portion 21 has an opening 21a that exposes the connecting portions 25 and 26 with the bonding wires 4 in the wiring portions 22 and 23. In the present embodiment, the opening 21a is formed in a circular shape in plan view.

基板２は、最外層にソルダーレジスト部２１が配されガラスエポキシ樹脂からなるＦＲ−４基板である。また、１つのＬＥＤチップ３が基板２上に実装されて１つの発光装置１が構成されている。   The board | substrate 2 is FR-4 board | substrate which the soldering resist part 21 is distribute | arranged to outermost layer and consists of a glass epoxy resin. One LED chip 3 is mounted on the substrate 2 to constitute one light emitting device 1.

図２は発光装置の概略上面図である。
図２に示すように、基板２の実装面には、ＬＥＤチップ３と電気的に接続される所定のパターンの配線部２２，２３が形成されている。本実施形態においては、配線部２２，２３の表層は金からなり、基板２上の所定方向について対をなして形成される。ここで、金の反射率は波長依存性が高く、赤色光の反射率よりも青色光の反射率が低い。配線部２２，２３は、ボンディングワイヤ４との接続部２５，２６を除いてソルダーレジスト部２１により被覆されている。すなわち、本実施形態においては、ソルダーレジスト部２１が、配線部２２を被覆して配線部２２よりも高い反射率を有するレジスト部を構成している。 FIG. 2 is a schematic top view of the light emitting device.
As shown in FIG. 2, wiring portions 22 and 23 having a predetermined pattern that are electrically connected to the LED chip 3 are formed on the mounting surface of the substrate 2. In the present embodiment, the surface layers of the wiring portions 22 and 23 are made of gold and are formed in pairs in a predetermined direction on the substrate 2. Here, the reflectance of gold is highly wavelength-dependent, and the reflectance of blue light is lower than the reflectance of red light. The wiring portions 22 and 23 are covered with the solder resist portion 21 except for the connection portions 25 and 26 with the bonding wire 4. That is, in the present embodiment, the solder resist portion 21 constitutes a resist portion that covers the wiring portion 22 and has a higher reflectance than the wiring portion 22.

また、基板２の実装面には、ＬＥＤチップ３の実装時に利用される認識マーク２８が形成される。本実施形態においては、認識マーク２８は各配線部２２，２３の近傍に形成されており、１つのＬＥＤチップ３について２つの認識マーク２８が設けられている。   Further, a recognition mark 28 used when mounting the LED chip 3 is formed on the mounting surface of the substrate 2. In the present embodiment, the recognition mark 28 is formed in the vicinity of the wiring portions 22 and 23, and two recognition marks 28 are provided for one LED chip 3.

図３は発光装置の概略断面図である。
ＬＥＤチップ３は、例えば窒化ガリウム系の発光層を有し、青色に発光する。このＬＥＤチップ３はフェイスアップ型であり、サファイア基板側がソルダーレジスト部２１上に設けられるダイボンドペースト６上に搭載される。 FIG. 3 is a schematic cross-sectional view of the light emitting device.
The LED chip 3 has, for example, a gallium nitride-based light emitting layer and emits blue light. This LED chip 3 is a face-up type, and the sapphire substrate side is mounted on a die bond paste 6 provided on the solder resist portion 21.

ダイボンドペースト６は光透過性の良好な透明樹脂である。ダイボンドペースト６としては、例えばシリコーン系樹脂、エポキシ樹脂等が用いられる。ダイボンドペースト６の厚さは１μｍ〜３μｍである。光、熱等による劣化を考慮すると、シリコーン系樹脂を用いることが好ましい。   The die bond paste 6 is a transparent resin with good light transmittance. As the die bond paste 6, for example, a silicone resin, an epoxy resin, or the like is used. The thickness of the die bond paste 6 is 1 μm to 3 μm. In consideration of deterioration due to light, heat, etc., it is preferable to use a silicone resin.

ソルダーレジスト部２１は、例えばエポキシ樹脂からなり、表層が金からなる配線部２２よりもＬＥＤチップ３の発光波長における光の反射率が良好となっている。ここで、ソルダーレジスト部２１は、エポキシ樹脂に白色粉末を含有することにより白色を呈している。この白色粉末としては、酸化チタン（ＴｉＯ２）、酸化アルミニウム（Ａｌ２Ｏ３）、酸化マグネシウム（ＭｇＯ）、硫酸バリウム（ＢａＳＯ４）、ボロンナイトライド（ＢＮ）等を用いることができる。本実施形態においては、白色粉末としてボロンナイトライドが用いられている。また、配線部２２上のソルダーレジスト部２１の厚さは２０μ〜３０μｍである。 The solder resist portion 21 is made of, for example, an epoxy resin, and the light reflectance at the emission wavelength of the LED chip 3 is better than that of the wiring portion 22 whose surface layer is made of gold. Here, the solder resist part 21 exhibits white by containing white powder in an epoxy resin. As this white powder, titanium oxide (TiO 2 ), aluminum oxide (Al 2 O 3 ), magnesium oxide (MgO), barium sulfate (BaSO 4 ), boron nitride (BN), or the like can be used. In this embodiment, boron nitride is used as the white powder. The thickness of the solder resist portion 21 on the wiring portion 22 is 20 μm to 30 μm.

また、各ＬＥＤチップ３は、黄色蛍光体が含まれるシリコーン系、エポキシ系等の封止部材７により封止されている。黄色蛍光体としては、例えば、ＹＡＧ（Yttrium Aluminum Garnet）系、ＢＯＳ（Barium ortho-Silicate）系等の蛍光体が用いられる。黄色蛍光体により各ＬＥＤチップ３から放射される光の一部が黄色に変換され、青色と黄色を組み合わせた結果、白色にて発光するようになっている。この封止部材７の表面が半球状のレンズ部５をなしている。   Each LED chip 3 is sealed with a silicone-based or epoxy-based sealing member 7 containing a yellow phosphor. As the yellow phosphor, for example, a YAG (Yttrium Aluminum Garnet) -based or BOS (Barium ortho-Silicate) -based phosphor is used. A part of the light emitted from each LED chip 3 is converted to yellow by the yellow phosphor, and as a result of combining blue and yellow, light is emitted in white. The surface of the sealing member 7 forms a hemispherical lens portion 5.

以上のように構成された発光装置１では、ソルダーレジスト部２１により配線部２２の素子搭載部２４が覆われているので、ＬＥＤチップ３から基板２側に出射した光はソルダーレジスト部２１にて反射する。ここで、ソルダーレジスト部２１は配線部２２よりも高い反射率であるので、ソルダーレジスト部２１を介さずに配線部にＬＥＤチップを搭載する従来のものよりも反射率を向上させることができる。また、配線部２２，２３がワイヤ４との接続部２５，２６を除いてソルダーレジスト部２１により覆われているので、素子搭載部２４以外の部分でも高い反射率を得ることができる。   In the light emitting device 1 configured as described above, since the element mounting portion 24 of the wiring portion 22 is covered by the solder resist portion 21, the light emitted from the LED chip 3 to the substrate 2 side is transmitted from the solder resist portion 21. reflect. Here, since the solder resist portion 21 has a higher reflectance than the wiring portion 22, the reflectance can be improved as compared with the conventional one in which the LED chip is mounted on the wiring portion without using the solder resist portion 21. In addition, since the wiring portions 22 and 23 are covered with the solder resist portion 21 except for the connection portions 25 and 26 with the wire 4, high reflectance can be obtained even in portions other than the element mounting portion 24.

また、従来のようにダイボンドペースト６を過度に厚くする必要はなく、製造コストが嵩むようなことはない。   Further, it is not necessary to make the die bond paste 6 excessively thick as in the prior art, and the manufacturing cost does not increase.

また、ダイボンドペースト６が透明であるので、ＬＥＤチップ３から側方に出射される光のダイボンドペースト６のフィレット部における反射を抑制することができる。さらに、ダイボンドペースト６及びソルダーレジスト部２１がともに樹脂であることから、金属の配線部に樹脂のダイボンドペーストによりＬＥＤチップ３を搭載するものに比して、ＬＥＤチップ３の基板２に対する接着性、密着性等が向上する。さらに、例えば、ダイボンドペースト６及びソルダーレジスト部２１をともにエポキシ樹脂とするなど、これらを同種の樹脂とすることにより極めて良好な接着性を発揮させることができる。   Moreover, since the die bond paste 6 is transparent, reflection of light emitted from the LED chip 3 to the side at the fillet portion of the die bond paste 6 can be suppressed. Furthermore, since both the die bond paste 6 and the solder resist portion 21 are resin, the adhesion of the LED chip 3 to the substrate 2 compared to the case where the LED chip 3 is mounted on the metal wiring portion by the resin die bond paste, Adhesion and the like are improved. Furthermore, for example, the die bond paste 6 and the solder resist portion 21 are both made of an epoxy resin. By using these resins of the same kind, extremely good adhesiveness can be exhibited.

さらに、ＬＥＤチップ３にて生じた熱は、ソルダーレジスト部２１を介して配線部２２の素子搭載部２４に伝達される。本実施形態においては、白色粉末としてセラミックであるボロンナイトライドが用いられていることから、ソルダーレジスト部２１の熱伝導性が良好である。これにより、素子搭載部２４を通じて配線部２２からＬＥＤチップ３の熱を逃がすことができ、所定の放熱性能を確保することができる。   Further, the heat generated in the LED chip 3 is transmitted to the element mounting portion 24 of the wiring portion 22 through the solder resist portion 21. In the present embodiment, since boron nitride which is ceramic is used as the white powder, the thermal conductivity of the solder resist portion 21 is good. Thereby, the heat | fever of the LED chip 3 can be released from the wiring part 22 through the element mounting part 24, and predetermined | prescribed heat dissipation performance can be ensured.

このように、本実施形態の発光装置１によれば、配線部２２の素子搭載部２４の表面にソルダーレジスト部２１を設けたので、基板２側の光の反射率を高めることができ、製造コストが嵩むこともない。   As described above, according to the light emitting device 1 of the present embodiment, since the solder resist portion 21 is provided on the surface of the element mounting portion 24 of the wiring portion 22, the reflectance of light on the substrate 2 side can be increased, Cost does not increase.

尚、前記実施形態においては、封止部材７が蛍光体を含有する樹脂であるものを示したが、封止部材７の材質については任意であり、例えば、図４に示すように、封止樹脂１０７を蛍光体を含まない透明樹脂とし、ＬＥＤチップ３の発光色で発光装置１０１が発光するようにしてもよい。   In the above embodiment, the sealing member 7 is made of a resin containing a phosphor. However, the material of the sealing member 7 is arbitrary. For example, as shown in FIG. The resin 107 may be a transparent resin that does not contain a phosphor, and the light emitting device 101 may emit light in the emission color of the LED chip 3.

また、前記実施形態においては、ソルダーレジスト部２１が白色粉末を含有するエポキシ樹脂のみからなるものを示したが、例えば、白色のエポキシ樹脂の表面に白色のシリコーン系樹脂を追加的にコーティングしたものであってもよい。   Moreover, in the said embodiment, although the solder resist part 21 showed what consists only of an epoxy resin containing a white powder, for example, what coated white silicone resin additionally on the surface of a white epoxy resin, for example It may be.

また、前記実施形態においては、ダイボンドペースト６が透明の樹脂であるものを示したが、例えば、図５に示すように、ダイボンドペースト２０６が白色の樹脂であってもよい。図５にはダイボンドペースト２０６に白色粉末を混入させた発光装置２０１を図示している。白色粉末としては、セラミックを用いたものが反射率及び熱伝導率が高くなり好ましい。白色粉末としては、酸化チタン、酸化アルミニウム、酸化マグネシウム、硫酸バリウム、ボロンナイトライド等の白色粉末を用いることができる。   Moreover, in the said embodiment, although the die bond paste 6 showed what is transparent resin, for example, as shown in FIG. 5, the die bond paste 206 may be white resin. FIG. 5 shows a light emitting device 201 in which a white powder is mixed in a die bond paste 206. As the white powder, a ceramic powder is preferable because of high reflectance and thermal conductivity. As the white powder, white powder such as titanium oxide, aluminum oxide, magnesium oxide, barium sulfate, and boron nitride can be used.

この発光装置２０１によれば、ダイボンドペースト２０６が白色であるので、ＬＥＤチップ３から基板２側に出射した光の一部はダイボンドペースト２０６にて反射する。そして、ダイボンドペースト２０６を透過した光は被覆レジスト部２７にて反射する。これにより、ＬＥＤチップ３から出射する光を確実に反射させることができる。   According to the light emitting device 201, since the die bond paste 206 is white, a part of the light emitted from the LED chip 3 to the substrate 2 is reflected by the die bond paste 206. The light transmitted through the die bond paste 206 is reflected by the coating resist portion 27. Thereby, the light radiate | emitted from LED chip 3 can be reflected reliably.

また、前記実施形態においては、発光素子として青色光のＬＥＤチップ３を用いたものを示したが、発光素子として例えば、赤色光、緑色光、紫外光等のＬＥＤチップを用いてもよい。例えば、図６に示すように、基板３０２上に青色のＬＥＤチップ３、緑色のＬＥＤチップ３１３及び赤色のＬＥＤチップ３２３を混在させて、発光装置３０１が全体として白色に発光するようにしてもよい。この場合、封止樹脂７は透明の樹脂とされる。   In the above-described embodiment, the blue light LED chip 3 is used as the light emitting element. However, for example, an LED chip such as red light, green light, or ultraviolet light may be used as the light emitting element. For example, as shown in FIG. 6, a blue LED chip 3, a green LED chip 313, and a red LED chip 323 may be mixed on a substrate 302 so that the light emitting device 301 emits white light as a whole. . In this case, the sealing resin 7 is a transparent resin.

この発光装置３０１においては、青色及び緑色のＬＥＤチップ３，３１３について、前記実施形態と同様に配線部２２の素子搭載部２４にソルダーレジスト部２１を形成している。ここで、赤色のＬＥＤチップ３２３については一方の電極が基板３０２側となるため、ソルダーレジスト部２１を形成することなく配線部３２２上に搭載されている。また、配線部３２２の表層については金で形成されており、前述のとおり赤色光の反射率が比較的良好であることから、赤色光が青色光及び緑色光に比して極端に反射率が低下するようなことはない。   In the light emitting device 301, for the blue and green LED chips 3, 313, the solder resist portion 21 is formed on the element mounting portion 24 of the wiring portion 22 as in the above embodiment. Here, the red LED chip 323 is mounted on the wiring portion 322 without forming the solder resist portion 21 because one electrode is on the substrate 302 side. Further, the surface layer of the wiring part 322 is made of gold, and the reflectance of red light is relatively good as described above. Therefore, the reflectance of red light is extremely higher than that of blue light and green light. There will be no decline.

さらに、例えば、紫外光のＬＥＤチップを用い、封止樹脂に赤、緑及び青の蛍光体を含ませることによって、全体として白色に発光させるようにしてもよい。   Furthermore, for example, an LED chip of ultraviolet light may be used, and red, green, and blue phosphors may be included in the sealing resin so that the whole emits white light.

また、前記実施形態においては、１つの基板２に１つのＬＥＤチップ３を備えたものを示したが、例えば図７及び図８に示すように、１つの基板２に複数のＬＥＤチップ３を備えて発光装置を構成してもよいことは勿論である。   Moreover, in the said embodiment, although what provided the one LED chip 3 on the one board | substrate 2 was shown, for example, as shown in FIG.7 and FIG.8, the one board | substrate 2 is equipped with the some LED chip 3. FIG. Of course, the light emitting device may be configured.

図７には、基板４０２を長尺に形成し、ＬＥＤチップ３を基板４０２の長手方向に並設した発光装置４０１を示している。この発光装置４０１においても、ソルダーレジスト部４２１及び配線部が基板４０２の実装面上に形成されている。また、図８には、基板５０２を平面視にて角形状に形成し、ＬＥＤチップ３を縦横に並設した発光装置５０１を示している。この発光装置５０１においても、ソルダーレジスト部５２１及び配線部が基板５０２の実装面上に形成されている。   FIG. 7 shows a light emitting device 401 in which the substrate 402 is formed long and the LED chips 3 are arranged in the longitudinal direction of the substrate 402. Also in the light emitting device 401, the solder resist portion 421 and the wiring portion are formed on the mounting surface of the substrate 402. FIG. 8 shows a light emitting device 501 in which the substrate 502 is formed in a square shape in plan view and the LED chips 3 are arranged side by side in the vertical and horizontal directions. Also in the light emitting device 501, the solder resist portion 521 and the wiring portion are formed on the mounting surface of the substrate 502.

これらの発光装置４０１，５０１は、ディスプレイ装置のバックライト光源として利用される。このように、ディスプレイ装置の仕様等に応じて基板４０２，５０２の形状、搭載されるＬＥＤチップ３の配置状態等を適宜変更することが可能である。   These light emitting devices 401 and 501 are used as a backlight light source of a display device. As described above, the shape of the substrates 402 and 502, the arrangement state of the LED chip 3 to be mounted, and the like can be appropriately changed according to the specifications of the display device.

また、前記実施形態においては、配線部２２，２３と別個に認識マーク２８を形成したものを示したが、配線部２２，２３の接続部２５，２６に認識マークの機能を付与することも可能である。この場合、接続部２５，２６の形状を実装装置で認識可能な形状とすればよく、例えば、接続部２５，２６のパターンが縦方向及び横方向で非対称となるようにすればよい。   In the above embodiment, the recognition mark 28 is formed separately from the wiring portions 22 and 23. However, the function of the recognition mark can be given to the connection portions 25 and 26 of the wiring portions 22 and 23. It is. In this case, the shape of the connection portions 25 and 26 may be a shape that can be recognized by the mounting apparatus. For example, the pattern of the connection portions 25 and 26 may be asymmetric in the vertical direction and the horizontal direction.

また、前記実施形態においては、基板２として難燃性がＦＲ−４のものを示したが、基板２は、例えばＦＲ−５であってもよく、要は配線部２２の素子搭載部２４がソルダーレジスト部２１等のレジスト部により覆われていればよい。   Moreover, in the said embodiment, although the flame retardant thing of FR-4 was shown as the board | substrate 2, the board | substrate 2 may be FR-5, for example, the element mounting part 24 of the wiring part 22 is the point. What is necessary is just to be covered with resist parts, such as the soldering resist part 21 grade | etc.,.

また、前記実施形態においては、基板２における実装面と反対側の面には特に部材等を設けていないが、実装面と反対側の面に熱伝導性を有する放熱部材を設けてもよい。放熱部材を設けることにより、ＬＥＤチップ３が発光した際の放熱性能を向上させることができる。この放熱部材としては、例えば、アルミニウム、アルミニウム合金、銅、銅合金等のような熱伝導性が比較的高い金属材料が好ましい。   Moreover, in the said embodiment, although the member etc. are not especially provided in the surface on the opposite side to the mounting surface in the board | substrate 2, you may provide the thermal radiation member which has thermal conductivity in the surface on the opposite side to a mounting surface. By providing the heat dissipation member, the heat dissipation performance when the LED chip 3 emits light can be improved. As this heat radiating member, for example, a metal material having a relatively high thermal conductivity such as aluminum, aluminum alloy, copper, copper alloy and the like is preferable.

また、発光素子としてＬＥＤでなく例えばＬＤを用いてもよく、発光素子の数、配置状態についても任意であるし、その他、具体的な細部構造等についても適宜に変更可能であることは勿論である。   Further, for example, an LD may be used instead of an LED as the light emitting element, and the number and arrangement of the light emitting elements are arbitrary, and it is needless to say that specific detailed structures can be appropriately changed. is there.

本発明の一実施形態を示すもので発光装置の概略外観斜視図である。1 is a schematic external perspective view of a light emitting device according to an embodiment of the present invention. 発光装置の概略上面図である。It is a schematic top view of a light-emitting device. 発光装置の模式断面図である。It is a schematic cross section of a light-emitting device. 変形例を示す発光装置の模式断面図である。It is a schematic cross section of the light-emitting device showing a modification. 変形例を示す発光装置の模式断面図である。It is a schematic cross section of the light-emitting device showing a modification. 変形例を示す発光装置の概略上面図である。It is a schematic top view of the light-emitting device which shows a modification. 変形例を示す発光装置の概略外観斜視図である。It is a general | schematic external appearance perspective view of the light-emitting device which shows a modification. 変形例を示す発光装置の概略外観斜視図である。It is a general | schematic external appearance perspective view of the light-emitting device which shows a modification.

符号の説明Explanation of symbols

１ 発光装置
２ 基板
３ ＬＥＤチップ
４ ボンディングワイヤ
５ レンズ部
６ ダイボンドペースト
７ 封止部材
２１ ソルダーレジスト部
２１ａ 開口
２２ 配線部
２３ 配線部
２４ 素子搭載部
２５ 接続部
２６ 接続部
２８ 認識マーク
３１ 電極
３２ 電極
１０１ 発光装置
１０７ 封止部材
２０１ 発光装置
２０６ ダイボンドペースト
３０１ 発光装置
３０２ 基板
３１３ ＬＥＤチップ
３２１ ソルダーレジスト部
３２２ 配線部
３２３ ＬＥＤチップ
４０１ 発光装置
４０２ 基板
４２１ ソルダーレジスト部
５０１ 発光装置
５０２ 基板
５２１ ソルダーレジスト部 DESCRIPTION OF SYMBOLS 1 Light-emitting device 2 Board | substrate 3 LED chip 4 Bonding wire 5 Lens part 6 Die bond paste 7 Sealing member 21 Solder resist part 21a Opening 22 Wiring part 23 Wiring part 24 Element mounting part 25 Connection part 26 Connection part 28 Recognition mark 31 Electrode 32 Electrode DESCRIPTION OF SYMBOLS 101 Light emitting device 107 Sealing member 201 Light emitting device 206 Die bond paste 301 Light emitting device 302 Substrate 313 LED chip 321 Solder resist portion 322 Wiring portion 323 LED chip 401 Light emitting device 402 Substrate 421 Solder resist portion 501 Light emitting device 502 Substrate 521 Solder resist portion

Claims (6)

基板上に所定のパターンで形成された配線部と、
前記配線部を被覆し、前記配線部よりも高い反射率を有するレジスト部と、
前記配線部上の前記レジスト部上に搭載され、前記配線部とワイヤにより電気的に接続される発光素子と、を備え、
前記レジスト部は、前記配線部における前記ワイヤとの接続部を露出させる開口を有することを特徴とする発光装置。 A wiring portion formed in a predetermined pattern on the substrate;
A resist part that covers the wiring part and has a higher reflectance than the wiring part;
A light emitting element mounted on the resist portion on the wiring portion and electrically connected to the wiring portion by a wire; and
The light-emitting device, wherein the resist portion has an opening exposing a connection portion with the wire in the wiring portion. 前記レジスト部は、白色粉末を含有することにより白色を呈していることを特徴とする請求項１に記載の発光装置。   The light emitting device according to claim 1, wherein the resist portion exhibits a white color by containing a white powder. 前記発光素子は、前記レジスト部上に設けられる透明のダイボンドペースト上に搭載されることを特徴とする請求項１または２に記載の発光装置。   The light emitting device according to claim 1, wherein the light emitting element is mounted on a transparent die bond paste provided on the resist portion. 前記発光素子は、前記レジスト部上に設けられる白色のダイボンドペースト上に搭載されることを特徴とする請求項１または２に記載の発光装置。   The light emitting device according to claim 1, wherein the light emitting element is mounted on a white die bond paste provided on the resist portion. 前記発光素子は青色光を発し、前記基板の前記配線部の表層は金であることを特徴とする請求項１から４のいずれか１項に記載の発光装置。   5. The light-emitting device according to claim 1, wherein the light-emitting element emits blue light, and a surface layer of the wiring portion of the substrate is gold. 前記発光素子を複数備えたことを特徴とする請求項１から５のいずれか１項に記載の発光装置。   The light emitting device according to claim 1, comprising a plurality of the light emitting elements.
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