JP2007299008A - 光空洞からなる物品 - Google Patents
光空洞からなる物品 Download PDFInfo
- Publication number
- JP2007299008A JP2007299008A JP2007175866A JP2007175866A JP2007299008A JP 2007299008 A JP2007299008 A JP 2007299008A JP 2007175866 A JP2007175866 A JP 2007175866A JP 2007175866 A JP2007175866 A JP 2007175866A JP 2007299008 A JP2007299008 A JP 2007299008A
- Authority
- JP
- Japan
- Prior art keywords
- mirror
- optical
- layer
- silicon layer
- optical cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 98
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 67
- 229910052710 silicon Inorganic materials 0.000 abstract description 67
- 239000010703 silicon Substances 0.000 abstract description 67
- 238000000034 method Methods 0.000 abstract description 58
- 230000000694 effects Effects 0.000 abstract description 8
- 239000011810 insulating material Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 80
- 238000004519 manufacturing process Methods 0.000 description 20
- 238000005530 etching Methods 0.000 description 16
- 230000003595 spectral effect Effects 0.000 description 15
- 238000012545 processing Methods 0.000 description 13
- 239000012212 insulator Substances 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 12
- 238000002310 reflectometry Methods 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 239000013307 optical fiber Substances 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 8
- 238000004891 communication Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J3/26—Generating the spectrum; Monochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/02—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
Abstract
【解決手段】光空洞からなる物品は、互いに間隔が置かれて平行な2つのミラーを含み、少なくとも1つのミラーは、好適に可動になっている。いくつかの実施例では、両ミラーは、応力が加えられていない単結晶シリコンから形成される。いくつかの実施例で使用される単結晶シリコンは、好適には絶縁物上単結晶シリコン(SOI)ウェハから供給される。本発明による方法では、第1のミラーが、第1のSOIウェハの薄いシリコン層にパターン化される。第1のミラーの近くの薄いシリコン層上に、支柱が配置される。第2のSOIウェハの薄いシリコン層は、2つの間隔を置かれた薄いシリコン層間にギャップがあるように、支柱に取り付けられる。第2のSOIウェハの薄いシリコン層は、そのウェハから厚いシリコン層および埋設された酸化物を除去することにより解放されて可動ミラーを形成する。
【選択図】図1
Description
したがって、この技術は、改善された製作方法と、それから生じる改善された光空洞から恩恵を受ける。
・応力が加えられる層を組み込まず、
・時期を合わせたエッチングを必要とせず、
・電極間に絶縁物を備えていない。
[1] t=mλ/(4n)
ここで、mは奇数の整数、λは波長(多波長信号のピーク、中心または平均)、nはミラーを構成する材料の屈折率である。
単結晶SOIウェハは、好適には、本発明方法に関して使用される。なぜなら、他の理由の中で、薄いシリコン層は、“ゼロ”応力層であるからである。前述したように、応力層は、解放された膜のゆがみを引き起こす。また、ドープされた単結晶シリコン等の伝導材料を用いると、電極を作るために可動ミラーに金属を付け加える必要性が回避される。さもなければ非伝導性の可動ミラーに、金属が付け加えられた場合には、可動ミラーの下部表面に集められる電荷の問題が生じる。さらに、SOIウェハの使用は、空洞等を作るために時期を合わせたエッチングの必要性が回避される。
Claims (1)
- 光信号を受信するように動作可能な光空洞からなる物品であって、上記光空洞は、
実質的に応力のかかっていない単結晶シリコンからなる第1の可動ミラーと、
実質的に応力のかかっていない単結晶シリコンからなり、前記第1の可動ミラーから間隔が置かれてそれと平行関係にある第2のミラーとを含む物品。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/536,344 US6356689B1 (en) | 2000-03-25 | 2000-03-25 | Article comprising an optical cavity |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001083938A Division JP2001296483A (ja) | 2000-03-25 | 2001-03-23 | 光空洞からなる物品 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2007299008A true JP2007299008A (ja) | 2007-11-15 |
Family
ID=24138129
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001083938A Pending JP2001296483A (ja) | 2000-03-25 | 2001-03-23 | 光空洞からなる物品 |
JP2007175866A Pending JP2007299008A (ja) | 2000-03-25 | 2007-07-04 | 光空洞からなる物品 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001083938A Pending JP2001296483A (ja) | 2000-03-25 | 2001-03-23 | 光空洞からなる物品 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6356689B1 (ja) |
EP (1) | EP1139159B1 (ja) |
JP (2) | JP2001296483A (ja) |
DE (1) | DE60132679T2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009134027A (ja) * | 2007-11-29 | 2009-06-18 | Seiko Epson Corp | 光学デバイス、波長可変フィルタモジュール、および光スペクトラムアナライザ |
EP2487519A1 (en) | 2011-02-09 | 2012-08-15 | Seiko Epson Corporation | Variable wavelength interference filter, optical module, optical analysis device, and method for manufacturing variable wavelength interference filter |
JP2015025942A (ja) * | 2013-07-26 | 2015-02-05 | セイコーエプソン株式会社 | 光学フィルターデバイス、光学モジュール、電子機器、及びmemsデバイス |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6303986B1 (en) | 1998-07-29 | 2001-10-16 | Silicon Light Machines | Method of and apparatus for sealing an hermetic lid to a semiconductor die |
US6803755B2 (en) | 1999-09-21 | 2004-10-12 | Rockwell Automation Technologies, Inc. | Microelectromechanical system (MEMS) with improved beam suspension |
US6798312B1 (en) | 1999-09-21 | 2004-09-28 | Rockwell Automation Technologies, Inc. | Microelectromechanical system (MEMS) analog electrical isolator |
US6532093B2 (en) * | 2000-12-06 | 2003-03-11 | Xerox Corporation | Integrated micro-opto-electro-mechanical laser scanner |
US6946314B2 (en) * | 2001-01-02 | 2005-09-20 | The Charles Stark Draper Laboratory, Inc. | Method for microfabricating structures using silicon-on-insulator material |
US7381630B2 (en) * | 2001-01-02 | 2008-06-03 | The Charles Stark Draper Laboratory, Inc. | Method for integrating MEMS device and interposer |
FR2819893B1 (fr) * | 2001-01-25 | 2003-10-17 | Opsitech Optical System Chip | Structure optique integree a birefringence reduite |
US6711317B2 (en) * | 2001-01-25 | 2004-03-23 | Lucent Technologies Inc. | Resiliently packaged MEMs device and method for making same |
US6707591B2 (en) | 2001-04-10 | 2004-03-16 | Silicon Light Machines | Angled illumination for a single order light modulator based projection system |
US6815243B2 (en) | 2001-04-26 | 2004-11-09 | Rockwell Automation Technologies, Inc. | Method of fabricating a microelectromechanical system (MEMS) device using a pre-patterned substrate |
KR100387239B1 (ko) * | 2001-04-26 | 2003-06-12 | 삼성전자주식회사 | Mems 릴레이 및 그 제조방법 |
US6768628B2 (en) | 2001-04-26 | 2004-07-27 | Rockwell Automation Technologies, Inc. | Method for fabricating an isolated microelectromechanical system (MEMS) device incorporating a wafer level cap |
US6794271B2 (en) * | 2001-09-28 | 2004-09-21 | Rockwell Automation Technologies, Inc. | Method for fabricating a microelectromechanical system (MEMS) device using a pre-patterned bridge |
US6761829B2 (en) * | 2001-04-26 | 2004-07-13 | Rockwell Automation Technologies, Inc. | Method for fabricating an isolated microelectromechanical system (MEMS) device using an internal void |
US6756310B2 (en) | 2001-09-26 | 2004-06-29 | Rockwell Automation Technologies, Inc. | Method for constructing an isolate microelectromechanical system (MEMS) device using surface fabrication techniques |
US6580858B2 (en) * | 2001-04-30 | 2003-06-17 | Xerox Corporation | Micro-opto-electro-mechanical system (MOEMS) |
US6747781B2 (en) | 2001-06-25 | 2004-06-08 | Silicon Light Machines, Inc. | Method, apparatus, and diffuser for reducing laser speckle |
US6782205B2 (en) | 2001-06-25 | 2004-08-24 | Silicon Light Machines | Method and apparatus for dynamic equalization in wavelength division multiplexing |
US6664786B2 (en) | 2001-07-30 | 2003-12-16 | Rockwell Automation Technologies, Inc. | Magnetic field sensor using microelectromechanical system |
US6829092B2 (en) | 2001-08-15 | 2004-12-07 | Silicon Light Machines, Inc. | Blazed grating light valve |
US6930364B2 (en) * | 2001-09-13 | 2005-08-16 | Silicon Light Machines Corporation | Microelectronic mechanical system and methods |
US6690178B2 (en) | 2001-10-26 | 2004-02-10 | Rockwell Automation Technologies, Inc. | On-board microelectromechanical system (MEMS) sensing device for power semiconductors |
US6710922B2 (en) * | 2001-12-07 | 2004-03-23 | Nortel Networks Limited | Optical filters |
US6800238B1 (en) | 2002-01-15 | 2004-10-05 | Silicon Light Machines, Inc. | Method for domain patterning in low coercive field ferroelectrics |
US6828171B2 (en) * | 2002-01-16 | 2004-12-07 | Xerox Corporation | Systems and methods for thermal isolation of a silicon structure |
JP3558066B2 (ja) | 2002-02-19 | 2004-08-25 | ソニー株式会社 | Mems素子とその製造方法、光変調素子、glvデバイスとその製造方法、及びレーザディスプレイ |
US20030197176A1 (en) * | 2002-04-22 | 2003-10-23 | Glimmerglass Networks, Inc. | Silicon on insulator standoff and method for manufacture thereof |
US6828887B2 (en) | 2002-05-10 | 2004-12-07 | Jpmorgan Chase Bank | Bistable microelectromechanical system based structures, systems and methods |
US6767751B2 (en) | 2002-05-28 | 2004-07-27 | Silicon Light Machines, Inc. | Integrated driver process flow |
US6728023B1 (en) | 2002-05-28 | 2004-04-27 | Silicon Light Machines | Optical device arrays with optimized image resolution |
US6822797B1 (en) | 2002-05-31 | 2004-11-23 | Silicon Light Machines, Inc. | Light modulator structure for producing high-contrast operation using zero-order light |
US6829258B1 (en) | 2002-06-26 | 2004-12-07 | Silicon Light Machines, Inc. | Rapidly tunable external cavity laser |
US6813059B2 (en) * | 2002-06-28 | 2004-11-02 | Silicon Light Machines, Inc. | Reduced formation of asperities in contact micro-structures |
JP2004061937A (ja) * | 2002-07-30 | 2004-02-26 | Japan Aviation Electronics Industry Ltd | 微小可動デバイス |
US20040021931A1 (en) * | 2002-07-31 | 2004-02-05 | Stanton Stuart T. | Article including an optical gain equalizer |
US6859324B2 (en) * | 2002-07-31 | 2005-02-22 | Agere Systems Inc. | Optical demultiplexer/multiplexer architecture |
US6801354B1 (en) | 2002-08-20 | 2004-10-05 | Silicon Light Machines, Inc. | 2-D diffraction grating for substantially eliminating polarization dependent losses |
US6712480B1 (en) | 2002-09-27 | 2004-03-30 | Silicon Light Machines | Controlled curvature of stressed micro-structures |
US6859300B2 (en) * | 2002-09-30 | 2005-02-22 | Lucent Technologies Inc. | Monolithic two-axis MEMS device for optical switches |
US6924581B2 (en) * | 2002-09-30 | 2005-08-02 | Lucent Technologies Inc. | Split spring providing multiple electrical leads for MEMS devices |
US6850354B2 (en) | 2002-09-30 | 2005-02-01 | Lucent Technologies Inc. | Monolithic MEMS device for optical switches |
US7370185B2 (en) * | 2003-04-30 | 2008-05-06 | Hewlett-Packard Development Company, L.P. | Self-packaged optical interference display device having anti-stiction bumps, integral micro-lens, and reflection-absorbing layers |
US6829077B1 (en) | 2003-02-28 | 2004-12-07 | Silicon Light Machines, Inc. | Diffractive light modulator with dynamically rotatable diffraction plane |
US6806997B1 (en) | 2003-02-28 | 2004-10-19 | Silicon Light Machines, Inc. | Patterned diffractive light modulator ribbon for PDL reduction |
US6975193B2 (en) * | 2003-03-25 | 2005-12-13 | Rockwell Automation Technologies, Inc. | Microelectromechanical isolating circuit |
US7447891B2 (en) | 2003-04-30 | 2008-11-04 | Hewlett-Packard Development Company, L.P. | Light modulator with concentric control-electrode structure |
TW590984B (en) * | 2003-06-09 | 2004-06-11 | Walsin Lihwa Corp | A micro-structure gap control technique and its method |
US7106487B2 (en) * | 2003-06-25 | 2006-09-12 | Intel Corporation | Thermal tuning of a laser using doped silicon etalon |
JP2005165067A (ja) * | 2003-12-03 | 2005-06-23 | Seiko Epson Corp | 波長可変フィルタおよび波長可変フィルタの製造方法 |
DE102004024755B4 (de) * | 2004-05-12 | 2006-02-23 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halterung für optische Elemente |
US7193492B2 (en) * | 2004-09-29 | 2007-03-20 | Lucent Technologies Inc. | Monolithic MEMS device having a balanced cantilever plate |
US7733553B2 (en) | 2005-09-21 | 2010-06-08 | Hewlett-Packard Development Company, L.P. | Light modulator with tunable optical state |
WO2007080789A1 (ja) * | 2006-01-12 | 2007-07-19 | Nippon Telegraph And Telephone Corporation | ミラー素子およびミラー素子の製造方法 |
US7550810B2 (en) * | 2006-02-23 | 2009-06-23 | Qualcomm Mems Technologies, Inc. | MEMS device having a layer movable at asymmetric rates |
JP4735513B2 (ja) * | 2006-11-06 | 2011-07-27 | 株式会社デンソー | 光学素子 |
KR20110017545A (ko) * | 2009-08-14 | 2011-02-22 | 한국전자통신연구원 | 광 결합기 |
JP5625614B2 (ja) * | 2010-08-20 | 2014-11-19 | セイコーエプソン株式会社 | 光フィルター、光フィルターモジュール、分光測定器および光機器 |
CN103048283B (zh) * | 2012-11-23 | 2015-03-18 | 姜利军 | 可调滤波器以及非色散气体探测器 |
US11624605B2 (en) * | 2017-07-06 | 2023-04-11 | Hamamatsu Photonics K.K. | Mirror unit and optical module |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10253912A (ja) * | 1997-01-13 | 1998-09-25 | Denso Corp | 光走査装置 |
US5870221A (en) * | 1997-07-25 | 1999-02-09 | Lucent Technologies, Inc. | Micromechanical modulator having enhanced performance |
JPH11167076A (ja) * | 1997-09-19 | 1999-06-22 | Commiss Energ Atom | 集積型同調可能型ファブリペロット形干渉計 |
DE19857946C1 (de) * | 1998-12-16 | 2000-01-20 | Bosch Gmbh Robert | Mikroschwingspiegel |
WO2000013210A2 (en) * | 1998-09-02 | 2000-03-09 | Xros, Inc. | Micromachined members coupled for relative rotation by torsional flexure hinges |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5408319A (en) * | 1992-09-01 | 1995-04-18 | International Business Machines Corporation | Optical wavelength demultiplexing filter for passing a selected one of a plurality of optical wavelengths |
US6246708B1 (en) * | 1997-08-27 | 2001-06-12 | Xerox Corporation | Semiconductor laser with associated electronic components integrally formed therewith |
US6242324B1 (en) * | 1999-08-10 | 2001-06-05 | The United States Of America As Represented By The Secretary Of The Navy | Method for fabricating singe crystal materials over CMOS devices |
-
2000
- 2000-03-25 US US09/536,344 patent/US6356689B1/en not_active Expired - Lifetime
-
2001
- 2001-03-12 EP EP01302215A patent/EP1139159B1/en not_active Expired - Lifetime
- 2001-03-12 DE DE60132679T patent/DE60132679T2/de not_active Expired - Lifetime
- 2001-03-23 JP JP2001083938A patent/JP2001296483A/ja active Pending
-
2007
- 2007-07-04 JP JP2007175866A patent/JP2007299008A/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10253912A (ja) * | 1997-01-13 | 1998-09-25 | Denso Corp | 光走査装置 |
US5870221A (en) * | 1997-07-25 | 1999-02-09 | Lucent Technologies, Inc. | Micromechanical modulator having enhanced performance |
JPH11167076A (ja) * | 1997-09-19 | 1999-06-22 | Commiss Energ Atom | 集積型同調可能型ファブリペロット形干渉計 |
WO2000013210A2 (en) * | 1998-09-02 | 2000-03-09 | Xros, Inc. | Micromachined members coupled for relative rotation by torsional flexure hinges |
DE19857946C1 (de) * | 1998-12-16 | 2000-01-20 | Bosch Gmbh Robert | Mikroschwingspiegel |
JP2002532749A (ja) * | 1998-12-16 | 2002-10-02 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | マイクロ振動ミラー |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009134027A (ja) * | 2007-11-29 | 2009-06-18 | Seiko Epson Corp | 光学デバイス、波長可変フィルタモジュール、および光スペクトラムアナライザ |
EP2487519A1 (en) | 2011-02-09 | 2012-08-15 | Seiko Epson Corporation | Variable wavelength interference filter, optical module, optical analysis device, and method for manufacturing variable wavelength interference filter |
US9170418B2 (en) | 2011-02-09 | 2015-10-27 | Seiko Epson Corporation | Variable wavelength interference filter, optical module, optical analysis device, and method for manufacturing variable wavelength interference filter |
JP2015025942A (ja) * | 2013-07-26 | 2015-02-05 | セイコーエプソン株式会社 | 光学フィルターデバイス、光学モジュール、電子機器、及びmemsデバイス |
Also Published As
Publication number | Publication date |
---|---|
EP1139159B1 (en) | 2008-02-06 |
JP2001296483A (ja) | 2001-10-26 |
EP1139159A2 (en) | 2001-10-04 |
EP1139159A3 (en) | 2004-01-02 |
DE60132679D1 (de) | 2008-03-20 |
US6356689B1 (en) | 2002-03-12 |
DE60132679T2 (de) | 2009-01-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2007299008A (ja) | 光空洞からなる物品 | |
US7504757B2 (en) | Multi-finger z-actuator | |
US6764936B2 (en) | Mechanical landing pad formed on the underside of a MEMS device | |
US7012752B2 (en) | Tunable-wavelength optical filter and method of manufacturing the same | |
US6620712B2 (en) | Defined sacrifical region via ion implantation for micro-opto-electro-mechanical system (MOEMS) applications | |
US7911672B2 (en) | Micro-electro-mechanical-system micromirrors for high fill factor arrays and method therefore | |
US6275324B1 (en) | Micromachined tunable optical filter with controllable finesse and passband wavelength position | |
KR20010076346A (ko) | Mems 광학적 교차-연결 스위치 및 마이크로일렉트로닉소자에서의 광학적 신호 스위칭 방법 | |
US7294552B2 (en) | Electrical contact for a MEMS device and method of making | |
JP2006266873A (ja) | 加速度センサおよびその製造方法 | |
KR20010067232A (ko) | Mems 가변 광학 감쇠기 | |
US7203393B2 (en) | MEMS micro mirrors driven by electrodes fabricated on another substrate | |
JP2009214295A (ja) | シリコン構造熱分離のためのシステム及び方法 | |
TW202300437A (zh) | 具有降低之串擾的mems反射鏡陣列與製造方法 | |
JP2005519784A (ja) | 絶縁物質に具現されたmemsコームアクチュエータとその製造方法 | |
US20020126455A1 (en) | Tiled microelectromechanical device modules and fabrication methods | |
US6509998B2 (en) | Tunable multi-channel optical attenuator (TMCOA) | |
US20230023348A1 (en) | Fabrication of a micro-mirror with reduced moment of inertia and mems devices | |
US6781735B2 (en) | Fabry-Perot cavity manufactured with bulk micro-machining process applied on supporting substrate | |
TW561131B (en) | Micro-electromechanical system and its fabricating method | |
US6797591B1 (en) | Method for forming a semiconductor device and a semiconductor device formed by the method | |
KR20060105246A (ko) | 비대칭 차압 센서 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080324 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100506 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100806 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100811 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101108 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20101108 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120312 |