JP2007266575A - 半導体レーザ素子及び半導体レーザ装置 - Google Patents

半導体レーザ素子及び半導体レーザ装置 Download PDF

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Publication number
JP2007266575A
JP2007266575A JP2006356583A JP2006356583A JP2007266575A JP 2007266575 A JP2007266575 A JP 2007266575A JP 2006356583 A JP2006356583 A JP 2006356583A JP 2006356583 A JP2006356583 A JP 2006356583A JP 2007266575 A JP2007266575 A JP 2007266575A
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Japan
Prior art keywords
semiconductor laser
layer
laser device
convex portion
electrode
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JP2006356583A
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English (en)
Japanese (ja)
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JP2007266575A5 (enExample
Inventor
Daijiro Inoue
大二朗 井上
Yasuyuki Bessho
靖之 別所
Masayuki Hata
雅幸 畑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2006356583A priority Critical patent/JP2007266575A/ja
Priority to US11/710,922 priority patent/US20070274360A1/en
Publication of JP2007266575A publication Critical patent/JP2007266575A/ja
Publication of JP2007266575A5 publication Critical patent/JP2007266575A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2223—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties hetero barrier blocking layers, e.g. P-P or N-N

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  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2006356583A 2006-02-28 2006-12-28 半導体レーザ素子及び半導体レーザ装置 Withdrawn JP2007266575A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006356583A JP2007266575A (ja) 2006-02-28 2006-12-28 半導体レーザ素子及び半導体レーザ装置
US11/710,922 US20070274360A1 (en) 2006-02-28 2007-02-27 Semiconductor laser element and semiconductor laser device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006053628 2006-02-28
JP2006356583A JP2007266575A (ja) 2006-02-28 2006-12-28 半導体レーザ素子及び半導体レーザ装置

Publications (2)

Publication Number Publication Date
JP2007266575A true JP2007266575A (ja) 2007-10-11
JP2007266575A5 JP2007266575A5 (enExample) 2010-01-14

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JP2006356583A Withdrawn JP2007266575A (ja) 2006-02-28 2006-12-28 半導体レーザ素子及び半導体レーザ装置

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US (1) US20070274360A1 (enExample)
JP (1) JP2007266575A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009194307A (ja) * 2008-02-18 2009-08-27 Rohm Co Ltd ジャンクションアップ型の光半導体素子
JP2012023065A (ja) * 2010-07-12 2012-02-02 Nippon Telegr & Teleph Corp <Ntt> 半導体素子
JP2013046039A (ja) * 2011-08-26 2013-03-04 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体レーザ素子
JP2016129244A (ja) * 2011-11-30 2016-07-14 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 半導体レーザダイオード
WO2018180952A1 (ja) * 2017-03-29 2018-10-04 パナソニックＩｐマネジメント株式会社 窒化物半導体発光素子、窒化物半導体発光素子の製造方法及び窒化物半導体発光装置
JP7173409B1 (ja) * 2021-12-27 2022-11-16 三菱電機株式会社 半導体光素子
JP7278498B1 (ja) * 2022-03-01 2023-05-19 三菱電機株式会社 半導体素子及び半導体素子の製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009164233A (ja) * 2007-12-28 2009-07-23 Rohm Co Ltd 窒化物半導体レーザ素子およびその製造方法
TW200947893A (en) * 2008-05-08 2009-11-16 Truelight Corp Dual-wavelength laser element for fiber communication
US9269870B2 (en) 2011-03-17 2016-02-23 Epistar Corporation Light-emitting device with intermediate layer
US9601657B2 (en) * 2011-03-17 2017-03-21 Epistar Corporation Light-emitting device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3116675B2 (ja) * 1993-07-28 2000-12-11 ソニー株式会社 半導体レーザー
JP2002164622A (ja) * 2000-11-22 2002-06-07 Toshiba Electronic Engineering Corp 半導体光素子
JP2002190635A (ja) * 2000-12-20 2002-07-05 Sharp Corp 半導体レーザ素子およびその製造方法
KR100594063B1 (ko) * 2004-01-15 2006-06-30 삼성전자주식회사 반도체 광소자와 그를 이용한 반도체 광패키지

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009194307A (ja) * 2008-02-18 2009-08-27 Rohm Co Ltd ジャンクションアップ型の光半導体素子
JP2012023065A (ja) * 2010-07-12 2012-02-02 Nippon Telegr & Teleph Corp <Ntt> 半導体素子
JP2013046039A (ja) * 2011-08-26 2013-03-04 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体レーザ素子
US9231370B2 (en) 2011-08-26 2016-01-05 Sumitomo Electric Industries, Ltd. Group III nitride semiconductor light emitting device
JP2016129244A (ja) * 2011-11-30 2016-07-14 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 半導体レーザダイオード
US9722394B2 (en) 2011-11-30 2017-08-01 Osram Opto Semiconductors Gmbh Semiconductor laser diode
WO2018180952A1 (ja) * 2017-03-29 2018-10-04 パナソニックＩｐマネジメント株式会社 窒化物半導体発光素子、窒化物半導体発光素子の製造方法及び窒化物半導体発光装置
JPWO2018180952A1 (ja) * 2017-03-29 2020-02-06 パナソニックＩｐマネジメント株式会社 窒化物半導体発光素子、窒化物半導体発光素子の製造方法及び窒化物半導体発光装置
JP7146736B2 (ja) 2017-03-29 2022-10-04 ヌヴォトンテクノロジージャパン株式会社 窒化物半導体発光素子の製造方法
JP7173409B1 (ja) * 2021-12-27 2022-11-16 三菱電機株式会社 半導体光素子
WO2023127036A1 (ja) * 2021-12-27 2023-07-06 三菱電機株式会社 半導体光素子
JP7278498B1 (ja) * 2022-03-01 2023-05-19 三菱電機株式会社 半導体素子及び半導体素子の製造方法
WO2023166545A1 (ja) * 2022-03-01 2023-09-07 三菱電機株式会社 半導体素子及び半導体素子の製造方法

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US20070274360A1 (en) 2007-11-29

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