JP2007258298A - Ceramic circuit substrate and electronic component module using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a ceramic circuit substrate that suppresses deterioration or the like in element characteristics and reliability due to a rise of an operating temperature and environmental temperature or the like and is used as a mounting substrate for a power semiconductor element or a thermoelectric element or the like. <P>SOLUTION: The ceramic circuit substrate 1 has a metallic circuit board 3 joined to the surface 2a of a ceramic substrate 2. A metal frame body 5 is joined to the surface 2a of the ceramic substrate 2 so as to surround the metallic circuit board 3. The metal frame body 5 is provided with a frame shape in which at least each corner part has a round shape. An electronic component such as the power semiconductor element or the thermoelectric element is mounted on the metallic circuit board 3 of the ceramic circuit substrate 1. The mounted component is hermetically sealed by joining a lid body onto the metal frame body 5. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a ceramic circuit board used as a substrate for mounting various elements and components, and an electronic component module using the ceramic circuit board.

  Conventionally, as a substrate for mounting various elements and components including a semiconductor element, a ceramic circuit board having excellent insulation and heat dissipation has been used. In particular, a ceramic circuit board on which a thermoelectric element such as a Peltier element, a power semiconductor element, or the like is mounted generally employs a bonded substrate of a ceramic substrate and a metal circuit board. As a method for joining metal circuit boards, a DBC method in which a ceramic substrate and a Cu plate are directly joined by heat treatment, a DBA method in which a ceramic substrate and an Al plate are directly joined by heat treatment, or a brazing material containing an active metal is used. A method (active metal method) for bonding a ceramic substrate and a metal plate using the method is known.

  High-power power semiconductor elements used for power applications and the like are resin-sealed after being mounted on a metal circuit board of a ceramic circuit board having excellent dielectric strength and the like (see, for example, Patent Document 1). Thermoelectric elements are also mounted on metal circuit boards of ceramic circuit boards that are excellent in insulation and thermal conductivity, for example (see Patent Documents 2 and 3, etc.). In order to improve and the like, it has been studied to seal the thermoelectric element with resin. However, with the high performance and high output of power semiconductor elements and thermoelectric elements, there is a possibility that the operating temperature (operating temperature), environmental temperature, etc. will rise to a temperature range that can not be tolerated by resin sealing, When used in such a high temperature range, deterioration of the element due to the atmosphere becomes a problem.

On the other hand, with the trend toward higher performance, higher functionality, higher reliability, etc. of power semiconductor elements, etc., the structure of the semiconductor element mounted on the ceramic circuit board is achieved while the reliability of the ceramic circuit board itself is surpassed. Further improvement in reliability as a semiconductor module is also required. For example, a ceramic circuit board on which a semiconductor element is mounted is bonded to a metal base board via a solder layer, but the solder layer between the metal plate on the back side of the ceramic circuit board and the metal base board is thinned, The buffering effect between the ceramic circuit board and the metal base board cannot be sufficiently obtained. This is a factor that reduces the reliability of the semiconductor module with respect to the thermal cycle.
JP 2005-285885 JP JP 2002-203993 A JP2003-174204

  An object of the present invention is to provide a ceramic circuit board capable of suppressing a decrease in characteristics and reliability associated with an increase in operating temperature and environmental temperature of a power semiconductor element and a thermoelectric element, and such a ceramic circuit board. It is to provide an electronic component module used.

  A ceramic circuit board according to an aspect of the present invention includes a ceramic board, a metal circuit board bonded to the surface of the ceramic board, and the surface of the ceramic board so as to surround the metal circuit board. The portion includes a metal frame having an R shape.

  An electronic component module according to another aspect of the present invention includes a ceramic circuit board according to the above-described aspect of the present invention, an electronic component mounted on the metal circuit board of the ceramic circuit board, and sealing the electronic component. As described above, a lid joined to the metal frame is provided.

  Since the ceramic circuit board of the present invention has a metal frame joined so as to surround the metal circuit board, the electronic components mounted on the metal circuit board are hermetically sealed using the metal frame. By doing so, it is possible to suppress a decrease in the characteristics, reliability, etc. of the electronic component accompanying an increase in operating temperature, environmental temperature, or the like. Furthermore, since the corners of the metal frame have an R shape, it is possible to suppress a decrease in airtightness due to a temperature rise, a decrease in reliability of the ceramic circuit board itself, and the like. As a result, even in an electronic component module whose operating temperature, operating temperature, environmental temperature and the like are being increased, the characteristics, reliability, and the like can be improved.

  Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. In addition, although embodiment of this invention is described below based on drawing, those drawings are provided for illustration and this invention is not limited to those drawings.

  1 and 2 are views showing a configuration of a ceramic circuit board according to a first embodiment of the present invention. FIG. 1 is a sectional view and FIG. 2 is a plan view. A ceramic circuit board 1 shown in these drawings has a ceramic substrate 2 as an insulating substrate. Various ceramic sintered bodies can be applied to the ceramic substrate 2 and are not particularly limited to the constituent materials. Examples of the constituent material of the ceramic substrate 2 include non-oxide ceramic sintered bodies such as aluminum nitride-based sintered bodies and silicon nitride-based sintered bodies, alumina-based sintered bodies, and composite sintered bodies of alumina and zirconia. An oxide-based ceramic sintered body can be used.

  Of the various ceramic sintered bodies described above, when high heat dissipation is required for the ceramic circuit board 1, a nitride ceramic sintered body such as an aluminum nitride-based sintered body or a silicon nitride-based sintered body is used. The ceramic substrate 2 is preferably used. In particular, an aluminum nitride-based sintered body having a thermal conductivity of 100 W / m K or more is effective for increasing the heat dissipation of the ceramic circuit board 1. Further, according to the silicon nitride-based sintered body, the mechanical strength can be greatly improved while improving the heat dissipation of the ceramic circuit board 1. The thickness of the ceramic substrate 2 varies depending on the material used, but is preferably in the range of 0.3 to 1.5 mm, for example.

  A metal circuit board 3 having a desired circuit pattern is bonded to the surface 2 a of the ceramic substrate 2. The circuit pattern by the metal circuit board 3 is not specifically limited, It sets suitably according to the use application of the ceramic circuit board 1. FIG. FIG. 1 and FIG. 2 are circuit patterns applied when a thermoelectric element is mounted on a ceramic circuit board 1 to produce a thermoelectric conversion module, and one end of each of a p-type thermoelectric element and an n-type thermoelectric element. The electrode pattern to which a part is joined is shown. Although not shown in FIGS. 1 and 2, a metal plate serving as a joining portion to a metal base substrate or a warp preventing member can be joined to the back surface 2 b of the ceramic substrate 2.

  The metal circuit board 3 can be composed of various metal plates in accordance with the use application or usage form of the ceramic circuit board 1, and for example, a Cu plate or a Cu alloy plate, an Al plate or an Al alloy plate is preferably used. However, the constituent material of the metal circuit board 3 is not limited to these, and metal materials other than Cu and Al, for example, Ni and Ni alloys, refractory metals such as W and Mo and alloys thereof, Cu, An alloy or clad material of Al, Ni or the like and a refractory metal can also be used. The thickness of the metal circuit board 3 is preferably in the range of 0.1 to 0.5 mm, for example.

  The ceramic substrate 2 and the metal circuit board 3 are joined together via a brazing material layer 4, for example. The brazing filler metal layer 4 is appropriately selected according to the type of the ceramic substrate 2 and the like. For example, at least one active metal selected from Ti, Zr, Hf, Nb, Al, etc. (for example, the total amount of the brazing filler metal) Active metal brazing material, which is contained in a brazing filler metal component such as an Ag-Cu brazing filler metal or a Cu brazing filler metal having an eutectic composition of Ag-Cu or in the vicinity thereof. It is preferable to use it. The active metal brazing material may contain an appropriate amount of Sn, In, or the like. It is also possible to apply a brazing material in which Sn or In (for example, 3 to 20% by weight with respect to the total amount of the brazing material) is blended with the brazing material component described above.

  In this embodiment, the ceramic circuit board 1 in which the ceramic substrate 2 and the metal circuit board 3 are bonded via the brazing material layer 4 is shown. However, the bonding method between the ceramic substrate 2 and the metal circuit board 3 is not limited to this. However, it is also possible to apply a direct bonding method such as a DBC method in which a Cu plate is directly bonded by heat treatment or a DBA method in which an Al plate is directly bonded by heat treatment. However, since the joining method using the brazing filler metal layer 4 can be used for various metal materials, it can be applied regardless of the constituent material of the metal circuit board 3. The same applies to the metal frame 5 to be described later, and it is possible to join the ceramic circuit board 2 at the same time as the metal circuit board 3 regardless of the constituent material.

  A metal frame 5 is further bonded to the surface 2 a of the ceramic substrate 2 to which the metal circuit board 3 is bonded so as to surround the metal circuit board 3. The metal frame 5 constitutes a metal circuit board 3 and a sealing frame for electronic components mounted thereon, and a lid (two ceramic circuit boards) to be described later is formed on the metal frame 5. In the case of bonding in a facing manner, the metal circuit board 3 and the electronic component can be hermetically sealed by bonding a ceramic substrate constituting the other ceramic circuit substrate. The metal frame 5 may be joined directly to the ceramic substrate 2 using a brazing material, but here, the brazing material layer 7 is interposed on the metal plate 6 for frame joining formed simultaneously with the metal circuit board 3. The metal frame 5 is joined.

  That is, a frame joining metal plate 6 having a shape surrounding the metal circuit board 3 is joined to the surface 2 a of the ceramic substrate 2. The frame-joining metal plate 6 is joined to the ceramic substrate 2 via the brazing filler metal layer 4 in the same manner as the metal circuit board 3. Such a frame joining metal plate 6 can be obtained, for example, by forming a frame pattern at the same time when the metal plate joined to the ceramic substrate 2 is etched to form a pattern of the metal circuit board 3. it can. The metal frame 5 is bonded to the frame bonding metal plate 6 via a brazing material layer 7. A brazing material similar to the brazing material layer 4 can be applied to the brazing material layer 7. Further, since the brazing material layer 7 is applied to metal-metal bonding, other brazing materials for metal materials can be applied.

  Various metal materials can be applied as the constituent material of the metal frame 5, and for example, Fe, Fe—Ni alloy, Fe—Ni—Co alloy, Cu, Cu alloy and the like are used. Since the metal frame 5 constitutes a sealing body, it is important to maintain the airtightness of the bonding surface with the ceramic substrate 2 and the frame bonding metal plate 6. From such a point, the difference in thermal expansion coefficient with the ceramic substrate 2 is small, and it is easy to maintain the airtightness and reliability of the joint surface when a thermal cycle is applied. It is preferable to use a Co-based alloy as a constituent material of the metal frame 5. Further, Cu and Cu alloys are excellent in ductility and have a large buffering effect when a heat cycle is applied, so that the airtightness and reliability of the joint surface can be maintained.

  Further, each corner 5a of the metal frame 5 is provided with an R shape (chamfered shape). That is, the metal frame 5 has a rectangular frame shape in which each corner 5a has an R shape. In the case of a rectangular frame, the thermal stress when a thermal cycle is applied is particularly concentrated at the corners. Stress concentration at the corners causes a reduction in local airtightness of the joint surface. Even if the stress concentration does not significantly affect the mechanical bonding force, it may have a great influence on the airtightness of the bonding surface. In the case of the metal frame 5 used as the metal sealing body, even a slight leak from the joint surface may adversely affect the characteristics and reliability. Therefore, each corner 5a of the metal frame 5 is provided with an R shape so as to relieve stress concentration when a thermal cycle is applied.

  According to the metal frame 5 having a rectangular frame shape in which each corner 5a is provided with an R shape, the internal airtightness thereof, in particular, the airtightness in a high-temperature atmosphere (for example, 300 ° C. or higher) is reliably maintained. Is possible. In order to obtain such an airtight maintenance effect, each corner 5a preferably has an R shape with a radius of curvature of 5 mm or more. In the case of an R shape with a radius of curvature of less than 5 mm, it may not be possible to obtain a sufficient stress relaxation effect at the corners. The upper limit of the R shape to be imparted to each corner 5a is not particularly specified, and the greater the radius of curvature of the R shape, the higher the stress dispersion effect. That is, a circular frame shape can be applied to the metal frame 5.

  FIG. 3 shows a metal frame 5 having a circular frame shape. The joint portion with the ceramic substrate 2 is the same as in FIGS. According to such a circular metal frame 5, it is possible to maintain a particularly high level of airtightness inside the metal frame 5. However, when the circular metal frame 5 is applied, the restriction on the arrangement area of the metal circuit board 3 (not shown in FIG. 3) becomes large. For this reason, it is preferable to set the shape of the metal frame 5 in consideration of the required degree of airtightness and the arrangement area of the metal circuit board 3. In any case, according to the metal frame 5 having at least the corners having the R shape, the air tightness of the joint surface with the ceramic substrate 2 and the metal plate 6 for frame joining, and consequently the air tightness inside the metal frame 5. Can be increased.

  According to the ceramic circuit board 1 having the metal frame 5 as described above, the airtightness in the metal frame 5 can be maintained even in a high temperature environment. Accordingly, it is possible to suppress deterioration of characteristics and reliability due to oxidation or the like of the electronic component mounted on the metal circuit board 3 in a high temperature environment. Such a ceramic circuit board 1 can be applied to a mounting board for various electronic components. In particular, it is necessary to increase the operating temperature, operating temperature, environmental temperature, etc. of thermoelectric elements and power semiconductor elements. Suitable for mounting.

  FIG. 4 shows a configuration example of a thermoelectric conversion module using the ceramic circuit board 1 according to the first embodiment. The thermoelectric conversion module 10 shown in FIG. 4 shows one Embodiment of the electronic component module of this invention. The thermoelectric conversion module 10 includes a plurality of p-type thermoelectric elements 11 and a plurality of n-type thermoelectric elements 12. These p-type thermoelectric elements 11 and n-type thermoelectric elements 12 are alternately arranged on the same plane, and the entire module is arranged in a matrix. An n-type thermoelectric element 12 is adjacent to one p-type thermoelectric element 11.

  Lower end surfaces of the p-type thermoelectric element 11 and the n-type thermoelectric element 12 are joined to the first electrode 13, respectively. The first electrode 13 is composed of a metal circuit board 3A of the first ceramic circuit board 1A. That is, the thermoelectric elements 11 and 12 are arranged on the first ceramic circuit board 1A, and are joined to the first electrode 13 made of the metal circuit board 3A via the brazing material layer. The upper end surfaces of the p-type thermoelectric element 11 and the n-type thermoelectric element 12 are each joined to the second electrode 15. The second electrode 15 is composed of the metal circuit board 3B of the second ceramic circuit board 1B, and is joined to the thermoelectric elements 11 and 12 via the brazing material layer 16, respectively.

  As described above, the thermoelectric elements 11 and 12 are arranged between the first ceramic circuit board 1A and the second ceramic circuit board 1B, and are provided, for example, on the first ceramic circuit board 1A. A metal frame 5 is installed. Further, the metal frame 5 is bonded to the frame bonding metal plate 6B of the second ceramic circuit board 1B via the brazing material layer 7B. Accordingly, each thermoelectric element 11, 12 is sealed in an airtight space constituted by the first ceramic circuit board 1 </ b> A, the second ceramic circuit board 1 </ b> B, and the metal frame 5.

  The ceramic substrate 2B in the second ceramic circuit substrate 1B has both a function as a support substrate for the second electrode 15 (metal circuit board 3B) and a function as a lid for the metal frame 5. The metal frame 5 may be provided on any of the first and second ceramic circuit boards 1A and 1B. In either case, the ceramic substrate constituting the other ceramic circuit substrate functions as a lid of the metal frame 5.

  The first electrode 13 and the second electrode 15 are provided in a state shifted by one element. In this way, the plurality of p-type thermoelectric elements 11 and n-type thermoelectric elements 12 are electrically connected in series. That is, the first and second electrodes 13 and 15 are arranged so that a direct current flows in the order of the p-type thermoelectric element 11, the n-type thermoelectric element 12, the p-type thermoelectric element 11, the n-type thermoelectric element 12. . In such a thermoelectric conversion module 10, for example, the first ceramic circuit board 1 </ b> A is disposed on the low temperature side (L), and the second ceramic circuit board 1 </ b> B is disposed on the high temperature side (H). Thus, by generating a potential difference between the first electrode 13 and the second electrode 15, it can be used as a power generation module, for example.

  As described above, when the thermoelectric conversion module 10 is used as a power generation module, the thermoelectric elements 11 and 12 are exposed to a high driving temperature and an environmental temperature. Since it is arranged in a sealed space that can maintain hermeticity, that is, in a sealed space constituted by the metal frame 5 that is superior in heat-resistant temperature as compared with conventional resin sealing, oxidation in a high temperature environment It is possible to suppress degradation of characteristics and reliability due to the above. Therefore, it is possible to improve the characteristics and reliability of the thermoelectric conversion module 10 in a high temperature environment. Maintenance of the hermeticity of the sealed space under such a high temperature environment is not limited to the thermoelectric conversion module 10 and functions effectively in various electronic component modules.

  Next, a ceramic circuit board according to a second embodiment of the present invention will be described with reference to FIG. FIG. 5 is a cross-sectional view showing the configuration of the ceramic circuit board according to the second embodiment of the present invention. In the ceramic circuit substrate 1 shown in the figure, the surface 2a side of the ceramic substrate 2 has the same configuration as that of the first embodiment. In addition, the material, shape, etc. of each part which comprises the ceramic circuit board 1 are the same as that of 1st Embodiment, and show the same effect.

  A metal plate 8 is bonded to the back surface 2b of the ceramic substrate 2 as a bonding portion to a metal base substrate described later. Similarly to the metal circuit board 3 on the front surface 2a side, the metal plate 8 on the back surface 2b side is also joined to the ceramic substrate 2 via the brazing material layer 4. The metal plate 8 may be bonded by applying a direct bonding method such as the DBC method or the DBA method.

  FIG. 6 shows a semiconductor module 20 as an embodiment of the present invention and a state in which it is bonded to a metal base substrate 21. The semiconductor module 20 is bonded to the metal base substrate 21 via the solder layer 22. The solder layer 22 joins the metal plate 8 on the back surface 2 b side of the ceramic substrate 2 and the metal base substrate 21. On the metal circuit board 3 of the ceramic circuit board 1, a high-power semiconductor element 23 such as a power semiconductor element, another electronic component 24, and the like are mounted. Furthermore, a metal lid 25 is joined to the metal frame 5 via a brazing material layer 26, and the semiconductor module 20 is constituted by these.

  The power semiconductor element 23 and other electronic components 24 constituting the semiconductor module 20 are sealed in an airtight space constituted by the metal frame 5 and the metal lid 25. Since this sealed space maintains hermeticity even at high temperatures, even in the power semiconductor element 23 and the like whose operating temperature is increased, it is possible to suppress deterioration in characteristics and reliability due to a high temperature environment. . That is, the characteristics and reliability of the semiconductor module 20 can be improved.

  Next, specific examples of the present invention and evaluation results thereof will be described.

Example 1
First, a brazing paste was applied to a surface of a silicon nitride (Si ₃ N ₄ ) substrate having a thickness of 0.635 mm in a circuit pattern shape having a width of 0.2 mm by a screen printing method. An Ag / Cu / Sn-based brazing material composition was applied to the brazing material paste. Furthermore, after placing a 0.3 mm thick Cu plate on the silicon nitride substrate on which the brazing paste is printed, heat treatment is performed under conditions of 800 ° C. for 15 minutes in a vacuum atmosphere of 0.01 Pa or less to perform nitriding. A silicon substrate and a Cu plate were joined.

  Next, an ultraviolet curable resist was applied on the Cu plate bonded to the silicon nitride substrate, and this was partially cured by irradiating ultraviolet rays according to the circuit pattern. Using this resin layer as a resist, the Cu board was etched according to the circuit pattern to form a Cu circuit board (metal circuit board 3). Simultaneously with the formation of the circuit pattern on the Cu plate, a frame pattern for joining the frame (metal plate 6 for joining the frame) was formed with the Cu plate.

  An Fe—Ni—Co-based alloy (Kovar) frame (metal frame 5) was placed on the above-described Cu pattern for bonding the frame via an Ag / Cu / Sn-based brazing material foil. The shape of the Kovar frame was circular. This was heat-treated in a reducing atmosphere under the conditions of 750 ° C. × 30 minutes, and the Kovar frame was bonded to the silicon nitride substrate via the frame bonding Cu pattern. In this way, a target ceramic circuit board, that is, a ceramic circuit board having a metal frame was produced. This ceramic circuit board was subjected to the characteristic evaluation described later.

Example 2
The ceramic having a metal frame in the same manner as in Example 1 except that the shape of the Kovar frame of Example 1 described above is a rectangular frame shape with a radius of curvature of 5 mm at each corner. A circuit board was produced. This ceramic circuit board was subjected to the characteristic evaluation described later.

Comparative Example 1
A ceramic circuit board having a metal frame was produced in the same manner as in Example 1 except that the shape of the Kovar frame of Example 1 described above was changed to a rectangular frame (no chamfering at each corner). This ceramic circuit board was subjected to the characteristic evaluation described later.

  For the ceramic circuit boards according to Examples 1 and 2 and Comparative Example 1 described above, the leak inspection of the joint surface of the metal frame was performed after heating to 500 ° C. As a result, a leak occurred on the joint surface in the ceramic circuit board of Comparative Example 1, but no leak was observed in the ceramic circuit boards of Examples 1 and 2. Furthermore, when the thermoelectric conversion module 10 shown in FIG. 4 was produced using the ceramic circuit boards of Examples 1 and 2, element degradation was suppressed even in a high temperature environment, and as a result, characteristics and reliability could be improved. It was confirmed.

Example 3
A brazing paste was applied in a circuit pattern to the surface of an aluminum nitride (AlN) substrate having a thickness of 0.635 mm by a screen printing method. The brazing material paste was similarly applied to the back surface of the aluminum nitride substrate. An Ag—Cu-based brazing material composition was applied to the brazing material paste. Furthermore, after arranging a 0.4 mm thick Cu plate on both sides of the aluminum nitride substrate on which the brazing paste was printed, heat treatment was performed under conditions of 800 ° C. × 15 minutes in a vacuum atmosphere of 0.01 Pa or less, and nitriding The aluminum substrate and the Cu plates on both sides were joined.

  Next, an ultraviolet curable resist was applied onto the front and back Cu plates, and these were partially cured by irradiating with ultraviolet rays according to the circuit pattern. Using this resin layer as a resist, the Cu board was etched according to the circuit pattern to form a Cu circuit board (metal circuit board 3). Simultaneously with the formation of the circuit pattern on the Cu plate, a frame pattern for joining the frame (frame joining metal plate 6) was formed of the Cu plate on the surface side.

  A target ceramic circuit board is formed by bonding a frame made of Fe-Ni-Co alloy (Kovar) (metal frame 5 / shape is the same as in Example 2) on a Cu pattern for bonding a frame on the surface side. Was made. This ceramic circuit board was soldered to a Cu base board via a Cu plate on the back side. The thermal cycle characteristics of the joined body of the ceramic circuit board and the Cu base substrate thus obtained were measured and evaluated.

  Thermal cycle characteristics: -40 ℃ × 30 minutes + room temperature (RT) × 10 minutes + 125 ° C × 30 minutes + RT × 10 minutes after one cycle of thermal cycle test (TCT) 250 cycles, ceramic circuit board Side hex development was measured. The hex development amount was determined as the ratio of the hex development portion at the edge of all patterns. As a result, the amount of hex development in Example 3 was as low as about 15%. Further, when a power semiconductor module was fabricated by mounting a power semiconductor element on the ceramic circuit board of Example 3, it was confirmed that the characteristics and reliability of the power semiconductor element could be improved.

It is sectional drawing which shows the structure of the ceramic circuit board by the 1st Embodiment of this invention. It is a top view of the ceramic circuit board shown in FIG. It is a top view which shows the modification of the ceramic circuit board shown in FIG. 1 and FIG. It is sectional drawing which shows the structural example of the electronic component module (thermoelectric conversion module) to which the ceramic circuit board shown in FIG. 1 is applied. It is sectional drawing which shows the structure of the ceramic circuit board by the 2nd Embodiment of this invention. It is sectional drawing which shows the structural example of the electronic component module (power semiconductor module) to which the ceramic circuit board shown in FIG. 5 is applied.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Ceramic circuit board, 2 ... Ceramic substrate, 3 ... Metal circuit board, 4, 7 ... Brazing material layer, 5 ... Metal frame, 6 ... Metal plate for frame body joining, 8 ... Back side metal plate, 10 ... Thermoelectric Conversion module 11, 12, ... Thermoelectric element, 13, 15 ... Electrode, 20 ... Power semiconductor module, 21 ... Metal base substrate, 23 ... Power semiconductor element, 25 ... Metal lid.

Claims (8)

A ceramic substrate;
A metal circuit board bonded to the surface of the ceramic substrate;
A ceramic circuit board comprising: a metal frame which is bonded to the surface of the ceramic board so as to surround the metal circuit board and has at least corners having an R shape. The ceramic circuit board according to claim 1,
A ceramic circuit board characterized in that the metal frame has a rectangular frame shape with each corner having an R shape. The ceramic circuit board according to claim 1,
The ceramic circuit board, wherein the metal frame has a circular frame shape. In the ceramic circuit board according to any one of claims 1 to 3,
2. The ceramic circuit board according to claim 1, wherein the metal frame is made of one selected from Fe, Fe—Ni alloy, Fe—Ni—Co alloy, Cu and Cu alloy. In the ceramic circuit board according to any one of claims 1 to 4,
The ceramic circuit board, wherein the metal circuit board and the metal frame are bonded to the ceramic board via a brazing material layer. The ceramic circuit board according to any one of claims 1 to 5,
Furthermore, the ceramic circuit board characterized by comprising the metal plate joined to the back surface of the said ceramic substrate. The ceramic circuit board according to any one of claims 1 to 6,
An electronic component mounted on the metal circuit board of the ceramic circuit board;
An electronic component module comprising: a lid joined to the metal frame so as to seal the electronic component. The electronic component module according to claim 7,
The electronic component module is a thermoelectric conversion module or a power semiconductor module.

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