TWI744474B - Ceramic/aluminum bonded body, insulating circuit substrate, led module, ceramic member, method of manufacturing ceramic/aluminum bonded body and method of manufacturing insulating circuit substrate - Google Patents

Ceramic/aluminum bonded body, insulating circuit substrate, led module, ceramic member, method of manufacturing ceramic/aluminum bonded body and method of manufacturing insulating circuit substrate Download PDF

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TWI744474B
TWI744474B TW107104124A TW107104124A TWI744474B TW I744474 B TWI744474 B TW I744474B TW 107104124 A TW107104124 A TW 107104124A TW 107104124 A TW107104124 A TW 107104124A TW I744474 B TWI744474 B TW I744474B
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Taiwan
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aluminum
ceramic
layer
nitride layer
aluminum nitride
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TW107104124A
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Chinese (zh)
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TW201841870A (en
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寺伸幸
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日商三菱綜合材料股份有限公司
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Priority claimed from JP2018009821A external-priority patent/JP7052374B2/en
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    • C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers

Abstract

In a ceramic/aluminum bonded body of the present invention, a ceramic member and an aluminum member including aluminum or an aluminum alloy are bonded. The ceramic member includes: a ceramic main body including silicon nitride; and an aluminum nitride layer or an aluminum oxide layer formed at a bonding surface with the aluminum member of the ceramic main body. The aluminum member is bonded to the ceramic member via the aluminum nitride layer or the aluminum oxide layer. The ceramic main body includes silicon nitride phases and glass phases formed between the silicon nitride phases. Al exists at an interface side of the aluminum nitride layer or the aluminum oxide layer in the glass phase of the ceramic main body.

Description

陶瓷／鋁接合體、絕緣電路基板、ＬＥＤ模組、陶瓷構件、陶瓷／鋁接合體之製造方法、絕緣電路基板之製造方法Ceramic/aluminum bonded body, insulated circuit board, LED module, ceramic components, ceramic/aluminum bonded body manufacturing method, insulated circuit board manufacturing method

本發明關於將陶瓷構件與由鋁或鋁合金所成的鋁構件予以接合而成之陶瓷/鋁接合體、將陶瓷基板與由鋁或鋁合金所成的鋁板予以接合而成之絕緣電路基板、具備此絕緣電路基板之LED模組、上述之陶瓷/鋁接合體中所使用之陶瓷構件，以及上述的陶瓷/鋁接合體之製造方法、絕緣電路基板之製造方法。 　　本案係以2017年2月6日在日本申請的特願2017-019737號及以2018年1月24日在日本申請的特願2018-009821號為基礎，主張優先權，在此援用其內容。The present invention relates to a ceramic/aluminum joint formed by joining a ceramic member and an aluminum member made of aluminum or aluminum alloy, an insulated circuit board formed by joining a ceramic substrate and an aluminum plate made of aluminum or aluminum alloy, The LED module provided with this insulated circuit board, the ceramic member used in the above-mentioned ceramic/aluminum joint, and the method of manufacturing the above-mentioned ceramic/aluminum joint, and the method of manufacturing the insulating circuit substrate.　　 This case is based on Japanese Patent Application No. 2017-019737 filed in Japan on February 6, 2017 and Japanese Patent Application No. 2018-009821 filed in Japan on January 24, 2018. Priority is claimed, and its content is used here.

功率模組、LED模組及熱電模組具備：在絕緣層之一面形成有由導電材料所成的電路層之絕緣電路基板，接合有功率半導體元件、LED元件及熱電元件之構造。 　　又，於上述之絕緣電路基板中，亦提供在陶瓷基板之一面接合導電性優異的金屬板而成為電路層，或在另一面接合散熱性優異的金屬板，形成金屬層之構造者。 　　再者，為了有效率地散逸從搭載於電路層的元件等所產生的熱，亦提供在絕緣電路基板之金屬層側接合有散熱片之附散熱片的絕緣電路基板。The power module, the LED module, and the thermoelectric module have a structure in which a circuit layer made of a conductive material is formed on one surface of an insulating layer and an insulating circuit substrate is joined to a power semiconductor element, an LED element, and a thermoelectric element.　　, in the above-mentioned insulated circuit substrate, a structure in which a metal plate with excellent conductivity is bonded to one side of the ceramic substrate to form a circuit layer, or a metal plate with excellent heat dissipation is bonded to the other side to form a metal layer is also provided.　　Furthermore, in order to efficiently dissipate the heat generated from the components mounted on the circuit layer, etc., an insulated circuit board with a heat sink in which a heat sink is bonded to the metal layer side of the insulated circuit board is also provided.

例如，專利文獻1中所示的功率模組具備一種構造，其具備：在陶瓷基板之一面形成有由鋁板所成的電路層，同時在另一面形成有由鋁板所成的金屬層之絕緣電路基板，與在此電路層上透過焊材接合之半導體元件。 　　又，專利文獻2、3中所示的LED模組具備一種構造，其具備：在由陶瓷所成的基材之一面形成導電性的電路層，在絕緣基板之另一面接合散熱體，在電路層上搭載有發光元件。 　　此處，於接合陶瓷基板與成為電路層及金屬層的鋁板之際，通常使用Al-Si系焊材。 [先前技術文獻] [專利文獻]For example, the power module shown in Patent Document 1 has a structure that includes an insulating circuit in which a circuit layer made of an aluminum plate is formed on one side of a ceramic substrate and a metal layer made of an aluminum plate is formed on the other side. The substrate is connected to the semiconductor element on the circuit layer through solder. In addition, the LED modules shown in Patent Documents 2 and 3 have a structure in which a conductive circuit layer is formed on one surface of a substrate made of ceramics, and a heat sink is bonded to the other surface of the insulating substrate, and the circuit Light-emitting elements are mounted on the layer.　　 Here, when joining the ceramic substrate and the aluminum plate that becomes the circuit layer and the metal layer, an Al-Si-based solder is usually used. [Prior Technical Documents] [Patent Documents]

[專利文獻1]日本發明專利第3171234號公報 　　[專利文獻2]日本特開2013-153157號公報 　　[專利文獻3]日本特開2015-070199號公報[Patent Document 1] Japanese Invention Patent No. 3171234 　　 [Patent Document 2] Japanese Patent Application Publication No. 2013-153157 　　 [Patent Document 3] Japanese Patent Application Publication No. 2015-070199

[發明所欲解決的課題][The problem to be solved by the invention]

可是，於上述之LED模組等中，要求進一步減薄搭載發光元件的電路層之厚度，例如有將厚度100μm以下的鋁板接合於陶瓷基板之情況。 　　如此地，使用Al-Si系焊材接合厚度薄的鋁板時，焊材的Si係擴散至成為電路層的鋁板而熔點降低，有電路層的一部分熔融之虞。However, in the above-mentioned LED modules and the like, it is required to further reduce the thickness of the circuit layer on which the light-emitting element is mounted. For example, there is a case where an aluminum plate with a thickness of 100 μm or less is bonded to a ceramic substrate. "As such, when using Al-Si-based soldering material to join thin aluminum plates, the Si system of the soldering material diffuses into the aluminum plate that becomes the circuit layer, and the melting point is lowered, which may cause a part of the circuit layer to melt.

為了抑制電路層之熔融，當降低接合溫度或減少焊材的Si量時，接合變不充分，接合可靠性會降低。因此，無法適用於發熱密度高的用途。 　　如以上，於以往的絕緣電路基板中，當薄地形成電路層時，難以抑制電路層之熔融且提高電路層與陶瓷基板之接合可靠性。In order to suppress the melting of the circuit layer, when the bonding temperature is lowered or the amount of Si in the solder material is reduced, the bonding becomes insufficient and the bonding reliability is reduced. Therefore, it cannot be applied to applications with high heat generation density. "As mentioned above, in the conventional insulated circuit board, when the circuit layer is formed thinly, it is difficult to suppress the melting of the circuit layer and improve the bonding reliability of the circuit layer and the ceramic substrate."

又，於LED模組中為了確保強度，會使用由氮化矽(Si3 N4 )所成的陶瓷基板。然而，由氮化矽(Si3 N4 )所成的陶瓷基板係具備氮化矽相與形成在此氮化矽相之間的玻璃相，由於此玻璃相與鋁板之接合變不充分，無法充分地確保接合強度。再者，此玻璃相係因燒結氮化矽的原料時所添加的燒結助劑而形成。 　　根據以上，於由氮化矽(Si3 N4 )所成的陶瓷基板中，與金屬板(尤其鋁板)的接合可靠性係比由氮化鋁(AlN)或氧化鋁(Al2 O3 )所成的陶瓷基板低。In addition, in order to ensure the strength of the LED module, a ceramic substrate made of silicon nitride (Si 3 N 4 ) is used. However, a ceramic substrate made of silicon nitride (Si 3 N 4 ) has a silicon nitride phase and a glass phase formed between the silicon nitride phase. Since the glass phase is not sufficiently bonded to the aluminum plate, it cannot be Fully ensure the joint strength. Furthermore, this glass phase is formed by the sintering aid added when sintering the raw material of silicon nitride. Based on the above, in a ceramic substrate made of silicon nitride (Si 3 N 4 ), the bonding reliability with a metal plate (especially aluminum plate) is better than that of aluminum nitride (AlN) or aluminum oxide (Al 2 O 3 ). The resulting ceramic substrate is low.

本發明係鑒於前述情事而完成者，目的在於提供：在鋁構件不熔融下，以高可靠性與由氮化矽(Si3 N4 )所成的陶瓷構件接合之陶瓷/鋁接合體、絕緣電路基板、具備此絕緣電路基板之LED模組、上述之陶瓷/鋁接合體所用之陶瓷構件、陶瓷/鋁接合體之製造方法、絕緣電路基板之製造方法。 [解決課題的手段]The present invention was completed in view of the foregoing circumstances, and aims to provide a ceramic/aluminum joint and insulation that can be joined to a ceramic member made of silicon nitride (Si 3 N 4) with high reliability without melting the aluminum member Circuit board, LED module equipped with this insulated circuit board, ceramic member used in the above-mentioned ceramic/aluminum bonded body, ceramic/aluminum bonded body manufacturing method, and insulated circuit board manufacturing method. [Means to solve the problem]

為了解決上述課題，本發明之一態樣的陶瓷/鋁接合體係將陶瓷構件與由鋁或鋁合金所成的鋁構件予以接合而成之陶瓷/鋁接合體，其特徵為：前述陶瓷構件具有由氮化矽所成的陶瓷本體及在此陶瓷本體中之與前述鋁構件之接合面所形成的氮化鋁層或氧化鋁層，隔著前述氮化鋁層或前述氧化鋁層，接合前述鋁構件，前述陶瓷本體具備氮化矽相與形成在此氮化矽相之間的玻璃相，在前述陶瓷本體的前述玻璃相中之與前述氮化鋁層或前述氧化鋁層之界面側部分存在Al。In order to solve the above-mentioned problems, the ceramic/aluminum joint system according to one aspect of the present invention is a ceramic/aluminum joint body formed by joining a ceramic member and an aluminum member made of aluminum or aluminum alloy, and is characterized in that the ceramic member has The ceramic body made of silicon nitride and the aluminum nitride layer or aluminum oxide layer formed on the bonding surface of the ceramic body with the aluminum member are joined to the aluminum nitride layer or aluminum oxide layer via the aluminum nitride layer or the aluminum oxide layer. An aluminum member, the ceramic body is provided with a silicon nitride phase and a glass phase formed between the silicon nitride phase, and the interface side part of the glass phase of the ceramic body with the aluminum nitride layer or the aluminum oxide layer There is Al.

依照此構成之陶瓷/鋁接合體，由於前述陶瓷構件具有由氮化矽所成的陶瓷本體及在此陶瓷本體中之與前述鋁構件之接合面所形成的氮化鋁層或氧化鋁層，在前述陶瓷本體的前述玻璃相中之與前述氮化鋁層或前述氧化鋁層之界面側部分存在Al，故由氮化矽所成的陶瓷本體與氮化鋁層或氧化鋁層係強固地結合。 　　又，由於接合陶瓷構件之氮化鋁層或氧化鋁層與鋁構件，鋁構件與陶瓷構件之接合可靠性高。 　　因此，可提供接合可靠性優異之陶瓷/鋁接合體。According to the ceramic/aluminum joint body of this structure, the ceramic member has a ceramic body made of silicon nitride and an aluminum nitride layer or an aluminum oxide layer formed on the joint surface of the ceramic body with the aluminum member. In the glass phase of the ceramic body, there is Al at the interface side with the aluminum nitride layer or the aluminum oxide layer, so the ceramic body made of silicon nitride and the aluminum nitride layer or the aluminum oxide layer are strongly Combine. "Furthermore, since the aluminum nitride layer or the aluminum oxide layer of the ceramic member is joined to the aluminum member, the bonding reliability between the aluminum member and the ceramic member is high.　　 Therefore, it is possible to provide a ceramic/aluminum bonded body with excellent bonding reliability.

此處，於本發明之一態樣的陶瓷/鋁接合體中，在前述陶瓷本體中之與前述鋁構件之接合面，形成有前述氮化鋁層，前述氮化鋁層係從前述陶瓷本體側起可依順序具有：氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層，與氮濃度為30原子%以上且未達50原子%之第2氮化鋁層。 　　此時，前述氮化鋁層係如上述，由於具有氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層，與氮濃度為30原子%以上且未達50原子%之第2氮化鋁層，故陶瓷本體的氮化矽係進行反應而形成氮化鋁層，由氮化矽所成的陶瓷本體與氮化鋁層係更強固地結合。藉此，即使對於陶瓷/鋁接合體負荷有冷熱循環時，也能抑制陶瓷構件與鋁構件之接合率降低。Here, in the ceramic/aluminum joint body of one aspect of the present invention, the joint surface of the ceramic body with the aluminum member is formed with the aluminum nitride layer, and the aluminum nitride layer is formed from the ceramic body The side surface may have in order: a first aluminum nitride layer with a nitrogen concentration of 50 atomic% or more and 80 atomic% or less and a nitrogen concentration slope in the thickness direction, and a nitrogen concentration of 30 atomic% or more and less than 50 atomic% The second aluminum nitride layer. At this time, the aforementioned aluminum nitride layer is as described above, since it has a first aluminum nitride layer with a nitrogen concentration of 50 atomic% or more and 80 atomic% or less and a nitrogen concentration gradient in the thickness direction, and the nitrogen concentration is 30 atomic% Above and less than 50 atomic% of the second aluminum nitride layer, the silicon nitride of the ceramic body reacts to form an aluminum nitride layer. The ceramic body made of silicon nitride and the aluminum nitride layer are more robust Combine. Thereby, even when the ceramic/aluminum joined body is subjected to a cooling and heating cycle, it is possible to suppress a decrease in the joining ratio between the ceramic member and the aluminum member.

本發明之一態樣的絕緣電路基板係將陶瓷基板與由鋁或鋁合金所成的鋁板予以接合而成之絕緣電路基板，其特徵為：前述陶瓷基板具有由氮化矽所成的陶瓷本體及在此陶瓷本體中之與前述鋁板之接合面所形成的氮化鋁層或氧化鋁層，隔著前述氮化鋁層或前述氧化鋁層，接合前述鋁板，前述陶瓷本體具備氮化矽相與形成在此氮化矽相之間的玻璃相，在前述陶瓷本體的前述玻璃相中之與前述氮化鋁層或前述氧化鋁層之界面側部分存在Al。An insulated circuit substrate of one aspect of the present invention is an insulated circuit substrate formed by joining a ceramic substrate and an aluminum plate made of aluminum or aluminum alloy, and is characterized in that the ceramic substrate has a ceramic body made of silicon nitride And the aluminum nitride layer or aluminum oxide layer formed on the joint surface of the ceramic body with the aluminum plate, the aluminum plate is joined via the aluminum nitride layer or the aluminum oxide layer, and the ceramic body has a silicon nitride phase With the glass phase formed between the silicon nitride phase, Al is present in the interface side portion of the glass phase with the aluminum nitride layer or the aluminum oxide layer in the glass phase of the ceramic body.

依照此構成之絕緣電路基板，由於前述陶瓷基板具有由氮化矽所成的陶瓷本體與氮化鋁層或氧化鋁層，在前述陶瓷本體的前述玻璃相中之與前述氮化鋁層或前述氧化鋁層之界面側部分存在Al，故由氮化矽所成的陶瓷本體與氮化鋁層或氧化鋁層係強固地結合。 　　又，由於接合陶瓷基板的氮化鋁層或氧化鋁層與鋁板，可提供鋁板與陶瓷基板的接合可靠性優異之絕緣電路基板。According to the insulated circuit substrate of this structure, the ceramic substrate has a ceramic body made of silicon nitride and an aluminum nitride layer or aluminum oxide layer. Al is present on the interface side of the aluminum oxide layer, so the ceramic body made of silicon nitride is strongly combined with the aluminum nitride layer or the aluminum oxide layer.　　In addition, since the aluminum nitride layer or aluminum oxide layer of the ceramic substrate is bonded to the aluminum plate, it is possible to provide an insulated circuit substrate with excellent bonding reliability between the aluminum plate and the ceramic substrate.

此處，於本發明之一態樣的絕緣電路基板中，在前述陶瓷本體中之與前述鋁板之接合面，形成有前述氮化鋁層，前述氮化鋁層係可從前述陶瓷本體側起依順序具有：氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層，與氮濃度為30原子%以上且未達50原子%之第2氮化鋁層。 　　此時，前述氮化鋁層係如上述，由於具有氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層，與氮濃度為30原子%以上且未達50原子%之第2氮化鋁層，故陶瓷本體的氮化矽係進行反應而形成氮化鋁層，由氮化矽所成的陶瓷本體與氮化鋁層係更強固地結合。藉此，即使對於絕緣電路基板負荷有冷熱循環時，也能抑制陶瓷基板與鋁板之接合率降低。Here, in the insulated circuit board of one aspect of the present invention, the aluminum nitride layer is formed on the joint surface of the ceramic body with the aluminum plate, and the aluminum nitride layer may be formed from the ceramic body side In order, there are: a first aluminum nitride layer with a nitrogen concentration of 50 atomic% or more and 80 atomic% or less and a nitrogen concentration slope in the thickness direction; Aluminum nitride layer. At this time, the aforementioned aluminum nitride layer is as described above, since it has a first aluminum nitride layer with a nitrogen concentration of 50 atomic% or more and 80 atomic% or less and a nitrogen concentration gradient in the thickness direction, and the nitrogen concentration is 30 atomic% Above and less than 50 atomic% of the second aluminum nitride layer, the silicon nitride of the ceramic body reacts to form an aluminum nitride layer. The ceramic body made of silicon nitride and the aluminum nitride layer are more robust Combine. As a result, even when a thermal cycle is applied to the insulated circuit board, it is possible to suppress a decrease in the bonding rate between the ceramic substrate and the aluminum plate.

本發明之一態樣的LED模組之特徵為具備上述的絕緣電路基板與接合於前述鋁板之一面側的LED元件。 　　於此構成之LED模組中，由於使用陶瓷基板與鋁板的接合可靠性優異之絕緣電路基板，即使負荷有冷熱循環時，也能抑制剝離等的不良狀況之發生。An LED module of one aspect of the present invention is characterized by including the above-mentioned insulated circuit board and the LED element bonded to one surface side of the aforementioned aluminum plate.　　In the LED module with this structure, since an insulated circuit board with excellent bonding reliability between the ceramic substrate and the aluminum plate is used, even when the load has a thermal cycle, the occurrence of defects such as peeling can be suppressed.

本發明之一態樣的陶瓷構件之特徵為具備由氮化矽所成的陶瓷本體與在此陶瓷本體之表面所形成的氮化鋁層或氧化鋁層，前述陶瓷本體具備氮化矽相與形成在此氮化矽相之間的玻璃相，在前述陶瓷本體的前述玻璃相中之與前述氮化鋁層或前述氧化鋁層之界面側部分存在Al。One aspect of the ceramic component of the present invention is characterized by having a ceramic body made of silicon nitride and an aluminum nitride layer or aluminum oxide layer formed on the surface of the ceramic body, the ceramic body having a silicon nitride phase and In the glass phase formed between the silicon nitride phases, Al exists in the interface side portion of the glass phase with the aluminum nitride layer or the aluminum oxide layer in the glass phase of the ceramic body.

依照此構成之陶瓷構件，由於在前述陶瓷本體的前述玻璃相中之與前述氮化鋁層或前述氧化鋁層之界面側部分存在Al，故由氮化矽所成的陶瓷本體與氮化鋁層或氧化鋁層係強固地結合。 　　又，由於具備氮化鋁層或氧化鋁層，與鋁構件可良好地接合。According to the ceramic member of this configuration, since Al is present in the portion of the interface side with the aluminum nitride layer or the aluminum oxide layer in the glass phase of the ceramic body, the ceramic body made of silicon nitride and aluminum nitride The layer or the aluminum oxide layer is strongly bonded. "Furthermore, since it is provided with an aluminum nitride layer or an aluminum oxide layer, it can be well bonded to an aluminum member.

此處，於本發明之一態樣的陶瓷構件中，可成為在前述陶瓷本體之表面，形成有前述氮化鋁層，前述氮化鋁層係從前述陶瓷本體側起依順序具有：氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層，與氮濃度為30原子%以上且未達50原子%之第2氮化鋁層之構成。 　　此時，前述氮化鋁層係如上述，由於具有氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層，與氮濃度為30原子%以上且未達50原子%之第2氮化鋁層，故陶瓷本體的氮化矽係進行反應而形成氮化鋁層，由氮化矽所成的陶瓷本體與氮化鋁層係更強固地結合。Here, in the ceramic member of one aspect of the present invention, the aluminum nitride layer may be formed on the surface of the ceramic body, and the aluminum nitride layer has in order from the ceramic body side: nitrogen concentration The composition of the first aluminum nitride layer that is 50 at% or more and 80 at% or less and has a nitrogen concentration gradient in the thickness direction, and the second aluminum nitride layer has a nitrogen concentration of 30 at% or more and less than 50 at% . At this time, the aforementioned aluminum nitride layer is as described above, since it has a first aluminum nitride layer with a nitrogen concentration of 50 atomic% or more and 80 atomic% or less and a nitrogen concentration gradient in the thickness direction, and the nitrogen concentration is 30 atomic% Above and less than 50 atomic% of the second aluminum nitride layer, the silicon nitride of the ceramic body reacts to form an aluminum nitride layer. The ceramic body made of silicon nitride and the aluminum nitride layer are more robust Combine.

又，於本發明之一態樣的陶瓷構件中，可成為在前述陶瓷本體之表面，形成有前述氮化鋁層，在此氮化鋁層中之與前述陶瓷本體相反側之面，形成有金屬鋁部之構成。 　　此時，可隔著金屬鋁部接合鋁構件，可更容易地接合鋁構件。再者，金屬鋁部不一定要形成在氮化鋁層中之與前述陶瓷本體相反側之面的全體，也可為部分地形成。In addition, in the ceramic member of one aspect of the present invention, the aluminum nitride layer may be formed on the surface of the ceramic body, and the aluminum nitride layer is formed on the opposite side of the ceramic body. The structure of the metal aluminum part.　　At this time, the aluminum member can be joined via the metal aluminum part, and the aluminum member can be joined more easily. In addition, the metal aluminum portion does not have to be formed on the entire surface of the aluminum nitride layer on the opposite side to the ceramic body, and may be partially formed.

本發明之一態樣的陶瓷/鋁接合體之製造方法係製造上述之陶瓷/鋁接合體的陶瓷/鋁接合體之製造方法，其特徵為具備：在由氮化矽所成的陶瓷本體之表面，形成厚度20μm以下的鋁層之鋁層形成步驟，將形成有前述鋁層的陶瓷本體加熱到前述鋁層的固相線溫度以上之溫度，形成氮化鋁層之氮化鋁層形成步驟，與隔著前述氮化鋁層，接合鋁構件之鋁構件接合步驟。A method for manufacturing a ceramic/aluminum joint body of one aspect of the present invention is the method for manufacturing a ceramic/aluminum joint body of the above-mentioned ceramic/aluminum joint body, and is characterized by having: On the surface, forming an aluminum layer forming an aluminum layer with a thickness of 20 μm or less, heating the ceramic body on which the aluminum layer is formed to a temperature above the solidus temperature of the aluminum layer, and forming an aluminum nitride layer forming an aluminum nitride layer , And the aluminum member joining step of joining the aluminum member via the aluminum nitride layer.

依照此構成的陶瓷/鋁接合體之製造方法，具備在由氮化矽所成的陶瓷本體之表面，形成厚度20μm以下的鋁層之鋁層形成步驟，與將形成有前述鋁層的陶瓷本體加熱到前述鋁層的固相線溫度以上之溫度，形成氮化鋁層之氮化鋁層形成步驟。因此，於此氮化鋁層形成步驟中，Al侵入陶瓷本體的玻璃相中，同時氮化矽相的Si3 N4 係分解，所生成的氮與鋁層係反應，而形成氮化鋁層。再者，由於鋁層之一部分殘存，在氮化鋁層中之與前述陶瓷本體相反側之面，亦形成金屬鋁部。 　　而且，由於具備隔著前述氮化鋁層接合鋁構件之鋁構件接合步驟，可容易地接合陶瓷構件與鋁構件。 　　因此，可製造接合可靠性優異之陶瓷/鋁接合體。According to the manufacturing method of the ceramic/aluminum junction body composed of this structure, the aluminum layer forming step of forming an aluminum layer with a thickness of 20 μm or less on the surface of a ceramic body made of silicon nitride is provided, and the ceramic body on which the aluminum layer is formed is provided. Heating to a temperature above the solidus temperature of the aluminum layer to form an aluminum nitride layer forming step of the aluminum nitride layer. Therefore, in this aluminum nitride layer forming step, Al intrudes into the glass phase of the ceramic body, and at the same time the Si 3 N 4 of the silicon nitride phase is decomposed, and the generated nitrogen reacts with the aluminum layer to form an aluminum nitride layer. . Furthermore, since a part of the aluminum layer remains, a metal aluminum portion is also formed on the surface of the aluminum nitride layer opposite to the ceramic body. Furthermore, since the aluminum member joining step is provided for joining the aluminum member via the aluminum nitride layer, the ceramic member and the aluminum member can be easily joined. Therefore, a ceramic/aluminum joined body with excellent joining reliability can be manufactured.

此處，於本發明之一態樣的陶瓷/鋁接合體之製造方法中，可具備：使前述氮化鋁層氧化而形成氧化鋁層之氧化處理步驟，與隔著前述氧化鋁層，接合鋁構件之鋁構件接合步驟。 　　此時，藉由使氮化鋁層氧化，可形成氧化鋁層。再者，在氮化鋁層中之與前述陶瓷本體相反側之面，形成金屬鋁部時，藉由氧化處理步驟而此金屬鋁部亦變成氧化鋁層。 　　又，由於具備隔著前述氧化鋁層接合鋁構件之鋁構件接合步驟，可容易地接合陶瓷構件與鋁構件。 　　因此，可製造接合可靠性優異之陶瓷/鋁接合體。Here, in the method of manufacturing a ceramic/aluminum bonded body according to one aspect of the present invention, it may include an oxidation treatment step of oxidizing the aluminum nitride layer to form an aluminum oxide layer, and bonding with the aluminum oxide layer interposed therebetween. The aluminum member joining step of the aluminum member. "At this time, by oxidizing the aluminum nitride layer, an aluminum oxide layer can be formed. Furthermore, when a metal aluminum portion is formed on the surface of the aluminum nitride layer opposite to the ceramic body, the metal aluminum portion also becomes an aluminum oxide layer through an oxidation treatment step. "Furthermore, since the aluminum member joining step is provided for joining the aluminum member via the aluminum oxide layer, the ceramic member and the aluminum member can be joined easily.　　 Therefore, it is possible to manufacture a ceramic/aluminum bonded body with excellent bonding reliability.

本發明之一態樣的絕緣電路基板之製造方法係製造上述之絕緣電路基板的絕緣電路基板之製造方法，其特徵為具備：在由氮化矽所成的陶瓷本體之表面，形成厚度20μm以下的鋁層之鋁層形成步驟，將形成有前述鋁層的陶瓷本體加熱到前述鋁層的固相線溫度以上之溫度，形成氮化鋁層之氮化鋁層形成步驟，與隔著前述氮化鋁層接合鋁板之鋁板接合步驟。A method of manufacturing an insulated circuit board of one aspect of the present invention is a method of manufacturing an insulated circuit board of the above-mentioned insulated circuit board, and is characterized by comprising: forming the surface of a ceramic body made of silicon nitride with a thickness of 20 μm or less The aluminum layer forming step of the aluminum layer is to heat the ceramic body on which the aluminum layer is formed to a temperature above the solidus temperature of the aluminum layer to form the aluminum nitride layer. The aluminum plate bonding step of bonding the aluminum layer to the aluminum plate.

依照此構成的絕緣電路基板之製造方法，由於具備在由氮化矽所成的陶瓷本體之表面，形成厚度20μm以下的鋁層之鋁層形成步驟，與將形成有前述鋁層的陶瓷本體加熱到前述鋁層的固相線溫度以上之溫度，形成氮化鋁層之氮化鋁層形成步驟。因此，於此氮化鋁層形成步驟中，Al侵入陶瓷本體的玻璃相中，同時氮化矽相的Si3 N4 係分解，所生成的氮與鋁層係反應，而形成氮化鋁層。再者，由於鋁層之一部分殘存，在氮化鋁層中之與前述陶瓷本體相反側之面，亦形成金屬鋁部。 　　而且，由於具備隔著前述氮化鋁層接合鋁板之鋁板接合步驟，可容易地接合陶瓷基板與鋁板。 　　因此，可製造接合可靠性優異之絕緣電路基板。According to the manufacturing method of the insulated circuit board of this structure, the aluminum layer forming step of forming an aluminum layer with a thickness of 20 μm or less on the surface of the ceramic body made of silicon nitride is provided, and the ceramic body on which the aluminum layer is formed is heated At a temperature above the solidus temperature of the aluminum layer, an aluminum nitride layer forming step is formed to form an aluminum nitride layer. Therefore, in this aluminum nitride layer forming step, Al intrudes into the glass phase of the ceramic body, and at the same time the Si 3 N 4 of the silicon nitride phase is decomposed, and the generated nitrogen reacts with the aluminum layer to form an aluminum nitride layer. . Furthermore, since a part of the aluminum layer remains, a metal aluminum portion is also formed on the surface of the aluminum nitride layer opposite to the ceramic body. Furthermore, since the aluminum plate joining step is provided for joining the aluminum plate via the aluminum nitride layer, the ceramic substrate and the aluminum plate can be easily joined. Therefore, an insulated circuit board with excellent bonding reliability can be manufactured.

此處，於本發明之一態樣的絕緣電路基板之製造方法中，可具備：使前述氮化鋁層氧化而形成氧化鋁層之氧化處理步驟，與隔著前述氧化鋁層接合鋁板之鋁板接合步驟。 　　此時，藉由使氮化鋁層氧化，可形成氧化鋁層。再者，在氮化鋁層中之與前述陶瓷本體相反側之面，形成有金屬鋁部時，藉由氧化處理步驟而此金屬鋁部亦變成氧化鋁層。 　　又，由於具備隔著前述氧化鋁層接合鋁板之鋁板接合步驟，可容易地接合陶瓷基板與鋁板。 　　因此，可製造接合可靠性優異之絕緣電路基板。 [發明的效果]Here, in the method of manufacturing an insulated circuit board of one aspect of the present invention, it may include an oxidation treatment step of oxidizing the aluminum nitride layer to form an aluminum oxide layer, and an aluminum plate that is bonded to the aluminum plate via the aluminum oxide layer. Joining step. "At this time, by oxidizing the aluminum nitride layer, an aluminum oxide layer can be formed. Furthermore, when a metal aluminum part is formed on the surface of the aluminum nitride layer on the opposite side to the ceramic body, the metal aluminum part also becomes an aluminum oxide layer through the oxidation treatment step. "Furthermore, since the aluminum plate bonding step is provided for bonding the aluminum plate via the aluminum oxide layer, the ceramic substrate and the aluminum plate can be easily joined.　　 Therefore, an insulated circuit board with excellent bonding reliability can be manufactured. [Effects of the invention]

依照本發明，可提供：在鋁構件不熔融下，以高可靠性與由氮化矽(Si3 N4 )所成的陶瓷構件接合之陶瓷/鋁接合體、絕緣電路基板、具備此絕緣電路基板之LED模組、上述之陶瓷/鋁接合體所用之陶瓷構件、陶瓷/鋁接合體之製造方法、絕緣電路基板之製造方法。According to the present invention, it is possible to provide a ceramic/aluminum bonded body, an insulated circuit board, and an insulated circuit provided with a ceramic member made of silicon nitride (Si 3 N 4) with high reliability without melting the aluminum member The LED module of the substrate, the ceramic components used in the above-mentioned ceramic/aluminum junction, the manufacturing method of the ceramic/aluminum junction, and the manufacturing method of the insulated circuit board.

[實施發明的形態][The form of implementing the invention]

以下，對於本發明之實施形態，參照附圖進行說明。Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(第1實施形態) 　　首先，對於本發明之第1實施形態，參照圖1至圖6進行說明。本實施形態之陶瓷/鋁接合體係藉由接合作為陶瓷構件的陶瓷基板11與作為鋁構件的鋁板22、23(電路層12、金屬層13)而構成之絕緣電路基板10。(First Embodiment) "First, the first embodiment of the present invention will be described with reference to Figs. 1 to 6. Figs. The ceramic/aluminum bonding system of this embodiment is an insulated circuit board 10 formed by bonding a ceramic substrate 11 as a ceramic member and aluminum plates 22 and 23 (circuit layer 12, metal layer 13) as an aluminum member.

圖1中，顯示本發明之第1實施形態的絕緣電路基板10(陶瓷/鋁接合體)及使用此絕緣電路基板10之LED模組1。 　　此LED模組1具備：絕緣電路基板10，在此絕緣電路基板10的一側(圖1中上側)之面，隔著接合層2接合之LED元件3，與在絕緣電路基板10的另一側(圖1中下側)所配置之散熱片51。In FIG. 1, an insulated circuit board 10 (ceramic/aluminum joint body) according to the first embodiment of the present invention and an LED module 1 using the insulated circuit board 10 are shown. This LED module 1 is provided with an insulated circuit board 10, on one side (upper side in FIG. 1) of the insulated circuit board 10, LED elements 3 joined via a bonding layer 2 and an insulating circuit board 10 on the other side Side (the lower side in FIG. 1) is provided with a heat sink 51.

LED元件3係以半導體材料所構成，為將電能轉換成光之光電轉換元件。再者，LED元件3的光轉換效率為20～30%左右，剩餘的70～80%之能量變成熱，因此於LED模組1中要求有效率地使熱散逸。 　　此處，接合此LED元件3與絕緣電路基板10之接合層2，例如為Au-Sn合金焊材等。The LED element 3 is composed of a semiconductor material and is a photoelectric conversion element that converts electrical energy into light. Furthermore, the light conversion efficiency of the LED element 3 is about 20-30%, and the remaining 70-80% of the energy becomes heat. Therefore, the LED module 1 is required to efficiently dissipate heat. "Here, the bonding layer 2 for bonding the LED element 3 and the insulated circuit board 10 is, for example, an Au-Sn alloy solder or the like.

而且，本實施形態之絕緣電路基板10係如圖1所示，具備：陶瓷基板30，配設於此陶瓷基板30之一面(圖1中上面)的電路層12，與配設於陶瓷基板30之另一面(圖1中下面)的金屬層13。Moreover, the insulated circuit board 10 of this embodiment is shown in FIG. 1, and includes a ceramic substrate 30, a circuit layer 12 disposed on one surface of the ceramic substrate 30 (upper surface in FIG. 1), and a ceramic substrate 30. The metal layer 13 on the other side (bottom in FIG. 1).

陶瓷基板30係以絕緣性高的Si3 N4 (氮化矽)所構成。此處，陶瓷基板30之厚度係設定在0.2～1.5mm之範圍內，本實施形態中設定在0.32mm。 　　此處，本實施形態中之陶瓷基板30係如圖4所示，具有：由氮化矽所成的陶瓷本體31，及在此陶瓷本體31中之與電路層12及金屬層13之接合面所形成的氮化鋁層36。The ceramic substrate 30 is made of Si 3 N 4 (silicon nitride) with high insulation. Here, the thickness of the ceramic substrate 30 is set in the range of 0.2 to 1.5 mm, and is set to 0.32 mm in this embodiment. Here, the ceramic substrate 30 in this embodiment is shown in FIG. 4, and has: a ceramic body 31 made of silicon nitride, and a bonding surface with the circuit layer 12 and the metal layer 13 in the ceramic body 31 The formed aluminum nitride layer 36.

電路層12係如圖6所示，藉由在陶瓷基板30之一面(圖6中上面)接合由鋁或鋁合金所成的鋁板22(鋁構件)而形成。作為構成電路層12的鋁板22(鋁構件)，例如較宜使用純度為99質量%以上的鋁(2N鋁)、純度99.9質量%以上的鋁或純度為99.99質量%以上的鋁等之軋製板，於本實施形態中，使用純度為99質量%以上的鋁(2N鋁)。再者，電路層12之厚度例如設定在0.05mm以上0.8mm以下之範圍內，本實施形態中設定在0.2mm。As shown in FIG. 6, the circuit layer 12 is formed by bonding an aluminum plate 22 (aluminum member) made of aluminum or an aluminum alloy to one surface of the ceramic substrate 30 (upper surface in FIG. 6). As the aluminum plate 22 (aluminum member) constituting the circuit layer 12, for example, aluminum with a purity of 99% by mass or more (2N aluminum), aluminum with a purity of 99.9% by mass or more, or aluminum with a purity of 99.99% by mass or more is preferably used. As for the plate, in this embodiment, aluminum (2N aluminum) with a purity of 99% by mass or more is used. In addition, the thickness of the circuit layer 12 is set within the range of 0.05 mm or more and 0.8 mm or less, for example, and is set to 0.2 mm in this embodiment.

金屬層13係如圖6所示，藉由在陶瓷基板30之另一面(圖6中下面)接合由鋁或鋁合金所成的鋁板23(鋁構件)而形成。作為構成金屬層13的鋁板23(鋁構件)，例如較宜使用純度為99質量%以上的鋁(2N鋁)、純度99.9質量%以上的鋁或純度為99.99質量%以上的鋁等之軋製板，於本實施形態中，使用純度為99質量%以上的鋁(2N鋁)。再者，金屬層13之厚度例如設定在0.05mm以上1.6mm以下之範圍內，本實施形態中設定在0.6mm。The metal layer 13 is formed by bonding an aluminum plate 23 (aluminum member) made of aluminum or aluminum alloy to the other surface (lower surface in FIG. 6) of the ceramic substrate 30 as shown in FIG. 6. As the aluminum plate 23 (aluminum member) constituting the metal layer 13, it is preferable to use, for example, aluminum with a purity of 99% by mass or more (2N aluminum), aluminum with a purity of 99.9% by mass or more, or aluminum with a purity of 99.99% by mass or more. As for the plate, in this embodiment, aluminum (2N aluminum) with a purity of 99% by mass or more is used. In addition, the thickness of the metal layer 13 is set within the range of 0.05 mm or more and 1.6 mm or less, for example, and is set to 0.6 mm in this embodiment.

散熱片51係用於冷卻前述的絕緣電路基板10者，於本實施形態中，為以熱傳導性良好的材質所構成之散熱板。本實施形態中，散熱片51係以A6063(鋁合金)構成。 　　此散熱片51係於本實施形態中，使用焊材直接接合至絕緣電路基板10的金屬層13。The heat sink 51 is used to cool the aforementioned insulated circuit board 10, and in this embodiment, it is a heat sink made of a material with good thermal conductivity. In this embodiment, the heat sink 51 is made of A6063 (aluminum alloy). "This heat sink 51 is in this embodiment, and it is directly joined to the metal layer 13 of the insulated circuit board 10 using solder."

此處，於圖2中顯示陶瓷基板30與電路層12及金屬層13的接合界面之放大說明圖。 　　陶瓷基板30係如上述成為一種構造，其具有由氮化矽所成的陶瓷本體31及在此陶瓷本體31中之與電路層12及金屬層13之接合面所形成的氮化鋁層36，接合此氮化鋁層36與電路層12及金屬層13。 　　此處，氮化鋁層36之厚度較佳設為4nm以上100nm以下之範圍內。Here, an enlarged explanatory view of the bonding interface between the ceramic substrate 30 and the circuit layer 12 and the metal layer 13 is shown in FIG. 2. The ceramic substrate 30 has a structure as described above. It has a ceramic body 31 made of silicon nitride and an aluminum nitride layer 36 formed on the joint surface of the ceramic body 31 with the circuit layer 12 and the metal layer 13. The aluminum nitride layer 36 is joined to the circuit layer 12 and the metal layer 13. "Here, the thickness of the aluminum nitride layer 36 is preferably set to be in the range of 4 nm or more and 100 nm or less.

又，於本實施形態中，如圖3所示，氮化鋁層36係從陶瓷本體31側起依順序具有：氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層36A，與氮濃度為30原子%以上且未達50原子%，氮濃度在厚度方向中大致一定之第2氮化鋁層36B。In addition, in this embodiment, as shown in FIG. 3, the aluminum nitride layer 36 has in order from the ceramic body 31 side: a nitrogen concentration of 50 atomic% or more and 80 atomic% or less and a nitrogen concentration in the thickness direction The inclined first aluminum nitride layer 36A and the second aluminum nitride layer 36B in which the nitrogen concentration is 30 atomic% or more and less than 50 atomic %, and the nitrogen concentration is substantially constant in the thickness direction.

而且，陶瓷本體31係如圖2所示，具備氮化矽相32與玻璃相33，於此玻璃相33之內部存在Al。玻璃相33係因燒結氮化矽的原料時所添加的燒結助劑而形成者，如圖2所示，存在於氮化矽相32彼此之粒界部分。Furthermore, as shown in FIG. 2, the ceramic body 31 includes a silicon nitride phase 32 and a glass phase 33, and Al is present in the glass phase 33. The glass phase 33 is formed by the sintering aid added when sintering the raw material of silicon nitride, and as shown in FIG. 2, it exists in the grain boundary portion between the silicon nitride phases 32.

此處，於本實施形態中，當分析接合界面時，將Al、Si、O、N之合計值當作100原子%時，將Si未達15原子%且O為3原子%以上25原子%以下之範圍內的區域當作玻璃相33。 　　此玻璃相33中存在的Al量，當將Al、Si、O、N之合計值當作100原子%時，較佳為35原子%以上65原子%以下之範圍內。Here, in the present embodiment, when the joint interface is analyzed, when the total value of Al, Si, O, and N is regarded as 100 atomic %, Si is less than 15 atomic% and O is 3 atomic% or more and 25 atomic% The area within the following range is regarded as the glass phase 33. "The amount of Al present in the glass phase 33, when the total value of Al, Si, O, and N is regarded as 100 at%, is preferably within the range of 35 at% to 65 at%.

接著，對於上述本實施形態的絕緣電路基板10之製造方法，參照圖5及圖6進行說明。Next, the manufacturing method of the insulated circuit board 10 of this embodiment mentioned above is demonstrated with reference to FIG. 5 and FIG. 6. FIG.

(鋁層形成步驟S01) 　　準備由氮化矽所成的板材(陶瓷本體31)，於此陶瓷本體31之表面，形成由厚度20μm以下的鋁或鋁合金所成的鋁層41。本實施形態中，鋁層41係以純度99質量%以上的純鋁所構成者。 　　此處，當形成厚度未達1μm的鋁層41時，較佳為採用濺鍍等的成膜技術。又，當形成厚度1μm以上20μm以下的鋁層41時，較佳為將壓延箔等層合於陶瓷本體31之表面。 　　再者，鋁層41之厚度的下限較佳設為5μm以上，鋁層41之厚度的下限較佳設為10μm以下。(Aluminum layer formation step S01) "Prepare a plate (ceramic body 31) made of silicon nitride, and form an aluminum layer 41 made of aluminum or aluminum alloy with a thickness of 20 μm or less on the surface of the ceramic body 31. In this embodiment, the aluminum layer 41 is made of pure aluminum with a purity of 99% by mass or more. "Here, when forming the aluminum layer 41 with a thickness of less than 1 μm, it is preferable to use a film forming technique such as sputtering. In addition, when forming the aluminum layer 41 having a thickness of 1 μm or more and 20 μm or less, it is preferable to laminate a rolled foil or the like on the surface of the ceramic body 31. "Furthermore, the lower limit of the thickness of the aluminum layer 41 is preferably 5 μm or more, and the lower limit of the thickness of the aluminum layer 41 is preferably 10 μm or less.

(氮化鋁層形成步驟S02) 　　接著，對於形成有鋁層41的陶瓷本體31，以構成鋁層41的鋁或鋁合金的固相線溫度以上之溫度進行熱處理，形成氮化鋁層36。氮化鋁層36係在從陶瓷本體31之表面侵蝕到內部的方向中形成。 　　此處，於進行熱處理之際，為了抑制經熔融的鋁變成球狀，較佳為以碳板等壓住鋁層41之表面。又，為了抑制蒸發等，熱處理溫度之上限較佳設為750℃以下。(Aluminum Nitride Layer Formation Step S02) "Next, the ceramic body 31 on which the aluminum layer 41 is formed is heat-treated at a temperature higher than the solidus temperature of aluminum or aluminum alloy constituting the aluminum layer 41 to form the aluminum nitride layer 36. The aluminum nitride layer 36 is formed in a direction eroded from the surface of the ceramic body 31 to the inside. "Here, when the heat treatment is performed, in order to prevent the molten aluminum from becoming spherical, it is preferable to press the surface of the aluminum layer 41 with a carbon plate or the like. In addition, in order to suppress evaporation and the like, the upper limit of the heat treatment temperature is preferably 750°C or lower.

再者，於本實施形態中，如圖4所示，鋁層41不全部變成氮化鋁層36，而一部分作為金屬鋁部38存在。而且，於金屬鋁部38與陶瓷本體31之間存在氮化鋁層36。 　　因此，俯視陶瓷本體31時，相對於形成有鋁層41的面積而言，氮化鋁層36之面積率為80%以上。於本實施形態中，由於在金屬鋁部38與陶瓷本體31之間存在氮化鋁層36，故金屬鋁部38之面積與氮化鋁層36之面積係視為相同。Furthermore, in this embodiment, as shown in FIG. 4, not all of the aluminum layer 41 becomes the aluminum nitride layer 36, but a part of it exists as the metal aluminum portion 38. Furthermore, there is an aluminum nitride layer 36 between the metal aluminum portion 38 and the ceramic body 31. "Therefore, when the ceramic body 31 is viewed from above, the area ratio of the aluminum nitride layer 36 is 80% or more with respect to the area where the aluminum layer 41 is formed. In this embodiment, since the aluminum nitride layer 36 exists between the metal aluminum portion 38 and the ceramic body 31, the area of the metal aluminum portion 38 and the area of the aluminum nitride layer 36 are regarded as the same.

(鋁板接合步驟S03) 　　接著，隔著陶瓷基板30的氮化鋁層36，接合成為電路層12及金屬層13的鋁板22、23。此處，作為接合手段，使用焊材時，可適宜選擇固相擴散接合、暫態液相接合(TLP)等之既有的手段。於本實施形態中，如圖6所示，使用Al-Si系焊材26、27進行接合。(Aluminum plate joining step S03) 　” Next, the aluminum plates 22 and 23 that become the circuit layer 12 and the metal layer 13 are joined with the aluminum nitride layer 36 of the ceramic substrate 30 interposed therebetween. Here, when a solder material is used as the joining means, existing means such as solid phase diffusion joining and transient liquid phase joining (TLP) can be appropriately selected. In this embodiment, as shown in FIG. 6, Al-Si-based welding materials 26 and 27 are used for joining.

具體而言，隔著Al-Si系的焊材26、27，層合陶瓷基板30與鋁板22、23，於積層方向中以1kgf/cm2 以上10kgf/cm2 以下(0.098MPa以上0.980MPa以下)之範圍加壓之狀態下裝入真空加熱爐中，接合陶瓷基板30與鋁板22、23，形成電路層12及金屬層13。 　　作為此時的接合條件，在接合環境為氬或氮等之惰性環境或真空環境等中進行。於真空環境時，可為10-6 Pa以上10-3 Pa以下之範圍內。加熱溫度係設定在580℃以上630℃以下之範圍內，上述加熱溫度的保持時間係設定在10分鐘以上45分鐘以下之範圍內。Specifically, the ceramic substrate 30 and the aluminum plates 22, 23 are laminated with Al-Si-based solders 26, 27 in the stacking direction at 1kgf/cm 2 or more and 10kgf/cm 2 or less (0.098MPa or more and 0.980MPa or less) The range of) is put into a vacuum heating furnace under pressure, and the ceramic substrate 30 and the aluminum plates 22, 23 are joined to form the circuit layer 12 and the metal layer 13. As the bonding conditions at this time, the bonding environment is an inert environment such as argon or nitrogen, a vacuum environment, or the like. In a vacuum environment, it can be within the range of 10 -6 Pa or more and 10 -3 Pa or less. The heating temperature is set within the range of 580°C or more and 630°C or less, and the holding time of the above heating temperature is set within the range of 10 minutes or more and 45 minutes or less.

此處，積層方向的加壓荷重之下限較佳設為3kgf/cm2 以上，更佳設為5kgf/cm2 以上。另一方面，積層方向的加壓荷重之上限較佳設為8kgf/cm2 以下，更佳設為7kgf/cm2 以下。 　　又，加熱溫度之下限較佳設為585℃以上，更佳設為590℃以上。另一方面，加熱溫度之上限較佳設為625℃以下，更佳設為620℃以下。 　　再者，加熱溫度的保持時間之下限較佳設為15分鐘以上，更佳設為20分鐘以上。另一方面，加熱溫度的保持時間之上限較佳設為40分鐘以下，更佳設為30分鐘以下。Here, the lower limit of the pressing load in the stacking direction is preferably 3 kgf/cm 2 or more, and more preferably 5 kgf/cm 2 or more. On the other hand, the upper limit of the load pressure of the laminating direction is preferably set 8kgf / cm 2 or less, more preferably to 7kgf / cm 2 or less. In addition, the lower limit of the heating temperature is preferably 585°C or higher, more preferably 590°C or higher. On the other hand, the upper limit of the heating temperature is preferably 625°C or lower, more preferably 620°C or lower. Furthermore, the lower limit of the holding time of the heating temperature is preferably set to 15 minutes or more, more preferably set to 20 minutes or more. On the other hand, the upper limit of the holding time of the heating temperature is preferably 40 minutes or less, more preferably 30 minutes or less.

又，於本實施形態中，如上述，由於在與鋁板22、23之接合面的80%以上，形成有金屬鋁部38(氮化鋁層36)，故接合此金屬鋁部38與鋁板22、23。因此，即使為比較低溫的條件，也可強固地接合陶瓷基板30與鋁板22、23。Furthermore, in this embodiment, as described above, since the metal aluminum portion 38 (aluminum nitride layer 36) is formed on 80% or more of the joint surface with the aluminum plates 22 and 23, the metal aluminum portion 38 and the aluminum plate 22 are joined. ,twenty three. Therefore, even under relatively low temperature conditions, the ceramic substrate 30 and the aluminum plates 22 and 23 can be strongly joined.

藉由如以上的步驟，製造本實施形態之絕緣電路基板10。Through the above steps, the insulated circuit board 10 of this embodiment is manufactured.

(散熱片接合步驟S04) 　　接著，在絕緣電路基板10的金屬層13之另一面側，接合散熱片51。 　　隔著焊材，層合絕緣電路基板10與散熱片51，於積層方向中加壓，同時裝入真空爐內，進行硬焊。藉此，接合絕緣電路基板10的金屬層13與散熱片51。此時，作為焊材，例如可使用厚度20～110mm的Al-Si系焊材箔，硬焊溫度較佳設定在比鋁板接合步驟S03中的硬焊溫度更低溫。(Heat sink bonding step S04) "Next, the heat sink 51 is bonded to the other surface side of the metal layer 13 of the insulating circuit board 10".　　 The insulating circuit board 10 and the heat sink 51 are laminated with soldering material interposed, and the laminate is pressurized in the lamination direction, and at the same time, it is placed in a vacuum furnace and brazed. Thereby, the metal layer 13 of the insulated circuit board 10 and the heat sink 51 are joined. At this time, as the welding material, for example, an Al-Si-based welding material foil having a thickness of 20 to 110 mm can be used, and the brazing temperature is preferably set to be lower than the brazing temperature in the aluminum plate joining step S03.

(LED元件接合步驟S05) 　　接著，在絕緣電路基板10的電路層12之一面，藉由焊接而接合LED元件3。 　　藉由以上之步驟，製作出如圖1所示的LED模組1。(LED element joining step S05) "Next, the LED element 3 is joined to one surface of the circuit layer 12 of the insulating circuit board 10 by soldering.　　 Through the above steps, the LED module 1 as shown in Figure 1 is produced.

依照如以上構成之絕緣電路基板10，由於陶瓷基板30具有由氮化矽所成的陶瓷本體31與氮化鋁層36，於陶瓷本體31的玻璃相33中之與氮化鋁層36的界面側部分存在Al，故由氮化矽所成的陶瓷本體31與氮化鋁層36係強固地結合。又，由於接合陶瓷基板30的氮化鋁層36與電路層12(鋁板22)及金屬層13(鋁板23)，陶瓷基板30與電路層12及金屬層13之接合可靠性高。因此，可提供接合可靠性優異之絕緣電路基板10。According to the insulated circuit substrate 10 constructed as above, since the ceramic substrate 30 has a ceramic body 31 made of silicon nitride and an aluminum nitride layer 36, the interface between the glass phase 33 of the ceramic body 31 and the aluminum nitride layer 36 Al is present in the side part, so the ceramic body 31 made of silicon nitride and the aluminum nitride layer 36 are firmly bonded. In addition, since the aluminum nitride layer 36 of the ceramic substrate 30 is bonded to the circuit layer 12 (aluminum plate 22) and the metal layer 13 (aluminum plate 23), the bonding reliability between the ceramic substrate 30 and the circuit layer 12 and the metal layer 13 is high. Therefore, an insulated circuit board 10 with excellent bonding reliability can be provided.

再者，於本實施形態中，如圖3所示，氮化鋁層36係從陶瓷本體31側起依順序具有：氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層36A，與氮濃度為30原子%以上且未達50原子%，氮濃度在厚度方向中大致一定之第2氮化鋁層36B。因此，陶瓷本體31之氮化矽係進行反應而形成氮化鋁層36，由氮化矽所成的陶瓷本體31與氮化鋁層36係更強固地結合。藉此，即使對於絕緣電路基板10負荷有冷熱循環時，也能抑制陶瓷基板30與電路層12及金屬層13之接合率降低。Furthermore, in this embodiment, as shown in FIG. 3, the aluminum nitride layer 36 has in order from the ceramic body 31 side: a nitrogen concentration of 50 atomic% or more and 80 atomic% or less and having nitrogen in the thickness direction The first aluminum nitride layer 36A with a sloping concentration and the second aluminum nitride layer 36B with a nitrogen concentration of 30 atomic% or more and less than 50 atomic %, and a nitrogen concentration substantially constant in the thickness direction. Therefore, the silicon nitride of the ceramic body 31 reacts to form the aluminum nitride layer 36, and the ceramic body 31 made of silicon nitride and the aluminum nitride layer 36 are more strongly combined. Thereby, even when a thermal cycle is applied to the insulated circuit board 10, it is possible to suppress a decrease in the bonding ratio between the ceramic substrate 30 and the circuit layer 12 and the metal layer 13.

又，於本實施形態中，在接合前的陶瓷基板30中，於氮化鋁層36中之與鋁板22、23的接合面形成有金屬鋁部38，此金屬鋁部38在前述接合面中的面積率為80%以上。因此，鋁板22、23與金屬鋁部38係成為鋁彼此之接合，即使設定在比較低的接合溫度，也可強固地接合鋁板22、23與陶瓷基板30。In addition, in this embodiment, in the ceramic substrate 30 before bonding, the aluminum nitride layer 36 has a metal aluminum portion 38 formed on the bonding surface with the aluminum plates 22 and 23, and the metal aluminum portion 38 is on the bonding surface. The area ratio is more than 80%. Therefore, the aluminum plates 22 and 23 and the metal aluminum portion 38 are joined to aluminum, and even if the joining temperature is set at a relatively low bonding temperature, the aluminum plates 22 and 23 and the ceramic substrate 30 can be strongly joined.

再者，依照本實施形態的絕緣電路基板10之製造方法，具備：在由氮化矽所成的陶瓷本體31之表面，形成厚度20μm以下的鋁層41之鋁層形成步驟S01；與，將形成有鋁層41的陶瓷本體31加熱到構成鋁層41的鋁或鋁合金的固相線溫度以上之溫度，形成氮化鋁層36之氮化鋁層形成步驟S02。因此，於此氮化鋁層形成步驟S02中，Al侵入陶瓷本體31的玻璃相33中，同時氮化矽相32的Si3 N4 係分解，所生成的氮(N)與鋁層41之鋁(Al)係反應，可形成氮化鋁層36。 　　而且，由於具備隔著氮化鋁層36(金屬鋁部38)接合鋁板22、23之鋁板接合步驟S03，可容易地接合陶瓷基板30與鋁板22、23。Furthermore, the method of manufacturing the insulated circuit board 10 according to this embodiment includes: forming an aluminum layer 41 with a thickness of 20 μm or less on the surface of the ceramic body 31 made of silicon nitride; and, The ceramic body 31 on which the aluminum layer 41 is formed is heated to a temperature higher than the solidus temperature of the aluminum or aluminum alloy constituting the aluminum layer 41 to form the aluminum nitride layer forming step S02 of the aluminum nitride layer 36. Therefore, in this aluminum nitride layer forming step S02, Al intrudes into the glass phase 33 of the ceramic body 31, and at the same time the Si 3 N 4 of the silicon nitride phase 32 is decomposed, and the nitrogen (N) generated is between the aluminum layer 41 The aluminum (Al) system reacts to form the aluminum nitride layer 36. Furthermore, since the aluminum plate joining step S03 for joining the aluminum plates 22 and 23 via the aluminum nitride layer 36 (metal aluminum portion 38) is provided, the ceramic substrate 30 and the aluminum plates 22 and 23 can be joined easily.

(第2實施形態) 　　接著，對於本發明之第2實施形態，參照圖7至圖10進行說明。再者，於與第1實施形態相同的構件，附有相同的符號，省略詳細的說明。 　　本實施形態之陶瓷/鋁接合體係藉由接合作為陶瓷構件的陶瓷基板130與作為鋁構件的鋁板122(電路層112)而構成之絕緣電路基板110。(Second Embodiment) "Next, a second embodiment of the present invention will be described with reference to FIGS. 7 to 10. In addition, the same symbols are attached to the same members as in the first embodiment, and detailed descriptions are omitted. "The ceramic/aluminum bonding system of the present embodiment is an insulated circuit board 110 formed by bonding a ceramic substrate 130 as a ceramic member and an aluminum plate 122 (circuit layer 112) as an aluminum member.

圖7中，顯示本發明之第2實施形態的絕緣電路基板110及使用此絕緣電路基板110之LED模組101。 　　此LED模組101具備：絕緣電路基板110，與在此絕緣電路基板110之一側(圖7中上側)之面，隔著接合層2接合之LED元件3。FIG. 7 shows an insulated circuit board 110 of the second embodiment of the present invention and an LED module 101 using the insulated circuit board 110. "This LED module 101 is equipped with an insulated circuit board 110, and the surface of this insulated circuit board 110 on one side (upper side in FIG. 7), and the LED element 3 joined via the bonding layer 2 interposed.

本實施形態之絕緣電路基板110係如圖7所示，具備陶瓷基板130與配設於此陶瓷基板130之一面(圖7中上面)的電路層112。As shown in FIG. 7, the insulated circuit substrate 110 of the present embodiment includes a ceramic substrate 130 and a circuit layer 112 arranged on one surface (the upper surface in FIG. 7) of the ceramic substrate 130.

陶瓷基板130係以絕緣性高的Si3 N4 (氮化矽)所構成，其厚度係設定在0.2～1.5mm之範圍內，本實施形態中設定在0.32mm。 　　此處，本實施形態中之陶瓷基板130係如圖8所示，具有：由氮化矽所成的陶瓷本體131，及在陶瓷本體131中之與電路層112之接合面所形成的氧化鋁層136。The ceramic substrate 130 is made of Si 3 N 4 (silicon nitride) with high insulating properties, and its thickness is set in the range of 0.2 to 1.5 mm, which is set to 0.32 mm in this embodiment. Here, the ceramic substrate 130 in this embodiment is shown in FIG. 8 and has: a ceramic body 131 made of silicon nitride, and alumina formed on the joint surface of the ceramic body 131 with the circuit layer 112 Layer 136.

電路層112係如圖10所示，藉由在陶瓷基板130之一面(圖10中上面)接合由鋁或鋁合金所成的鋁板122(鋁構件)而形成。作為構成電路層112的鋁板122(鋁構件)，例如較宜使用純度為99質量%以上的鋁(2N鋁)、純度99.9質量%以上的鋁或純度為99.99質量%以上的鋁等之軋製板，於本實施形態中，使用純度為99質量%以上的鋁(2N鋁)。再者，電路層112之厚度例如設定在0.05mm以上0.8mm以下之範圍內，本實施形態中設定在0.1mm。As shown in FIG. 10, the circuit layer 112 is formed by bonding an aluminum plate 122 (aluminum member) made of aluminum or an aluminum alloy to one surface of the ceramic substrate 130 (upper surface in FIG. 10). As the aluminum plate 122 (aluminum member) constituting the circuit layer 112, it is preferable to use, for example, aluminum with a purity of 99% by mass or more (2N aluminum), aluminum with a purity of 99.9% by mass or more, or aluminum with a purity of 99.99% by mass or more. As for the plate, in this embodiment, aluminum (2N aluminum) with a purity of 99% by mass or more is used. Furthermore, the thickness of the circuit layer 112 is set within a range of 0.05 mm or more and 0.8 mm or less, for example, and is set to 0.1 mm in this embodiment.

此處，圖8中顯示陶瓷基板130與電路層112之接合界面的放大說明圖。 　　陶瓷基板130係如上述成為一種構造，其具有由氮化矽所成的陶瓷本體131及在此陶瓷本體131中之與電路層112之接合面所形成的氧化鋁層136，接合此氧化鋁層136與電路層112。 　　此處，氧化鋁層136之厚度較佳設為4nm以上100nm以下之範圍內。Here, an enlarged explanatory view of the bonding interface between the ceramic substrate 130 and the circuit layer 112 is shown in FIG. 8. The ceramic substrate 130 has a structure as described above. It has a ceramic body 131 made of silicon nitride and an aluminum oxide layer 136 formed on the bonding surface of the ceramic body 131 with the circuit layer 112, and the aluminum oxide layer is bonded to it. 136 and circuit layer 112. "Here, the thickness of the aluminum oxide layer 136 is preferably set to be in the range of 4 nm or more and 100 nm or less.

而且，陶瓷本體131係如圖8所示，具備氮化矽相132與玻璃相133，於此玻璃相133之內部存在Al。玻璃相133係因燒結氮化矽的原料時所用的燒結助劑而形成者，如圖8所，存在於氮化矽相132彼此之粒界部分。Furthermore, as shown in FIG. 8, the ceramic body 131 includes a silicon nitride phase 132 and a glass phase 133, and Al is present in the glass phase 133. The glass phase 133 is formed by the sintering aid used when sintering the raw material of silicon nitride. As shown in FIG. 8, it exists in the grain boundary part of the silicon nitride phase 132.

此處，於本實施形態中，當分析接合界面時，將Al、Si、O、N之合計值當作100原子%時，將Si未達15原子%且O為3原子%以上25原子%以下之範圍內的區域當作玻璃相133。 　　此玻璃相133中存在的Al量，當將Al、Si、O、N之合計值當作100原子%時，較佳為35原子%以上65原子%以下之範圍內。Here, in the present embodiment, when the joint interface is analyzed, when the total value of Al, Si, O, and N is regarded as 100 atomic %, Si is less than 15 atomic% and O is 3 atomic% or more and 25 atomic% The area within the following range is regarded as the glass phase 133. "The amount of Al present in the glass phase 133, when the total value of Al, Si, O, and N is regarded as 100 at%, is preferably within the range of 35 at% to 65 at%.

接著，對於上述本實施形態的絕緣電路基板110之製造方法，參照圖9及圖10進行說明。Next, the method of manufacturing the insulated circuit board 110 of the present embodiment described above will be described with reference to FIGS. 9 and 10.

(鋁層形成步驟S101) 　　準備由氮化矽所成的板材(陶瓷本體131)，於陶瓷本體131之表面，形成由厚度20μm以下的鋁或鋁合金所成的鋁層141。本實施形態中，鋁層141係以純度99質量%以上的純鋁所構成者。(Aluminum layer formation step S101) "Prepare a plate (ceramic body 131) made of silicon nitride, and form an aluminum layer 141 made of aluminum or aluminum alloy with a thickness of 20 μm or less on the surface of the ceramic body 131. In this embodiment, the aluminum layer 141 is made of pure aluminum with a purity of 99% by mass or more.

(氮化鋁層形成步驟S102) 　　接著，對於形成有鋁層141的陶瓷本體131，以構成鋁層141的鋁或鋁合金的固相線溫度以上之溫度進行熱處理，形成氮化鋁層136a。 　　此處，於進行熱處理之際，為了抑制經熔融的鋁變成球狀，較佳為以碳板壓住鋁層141之表面。又，為了抑制蒸發等，熱處理溫度之上限較佳設為750℃以下。 　　再者，鋁層141不一定要全部變成氮化鋁層136a，可一部分的鋁層141作為金屬鋁部存在。(Aluminum Nitride Layer Formation Step S102) "Next, the ceramic body 131 on which the aluminum layer 141 is formed is heat-treated at a temperature higher than the solidus temperature of aluminum or aluminum alloy constituting the aluminum layer 141 to form an aluminum nitride layer 136a. "Here, when the heat treatment is performed, in order to prevent the molten aluminum from becoming spherical, it is preferable to press the surface of the aluminum layer 141 with a carbon plate. In addition, in order to suppress evaporation and the like, the upper limit of the heat treatment temperature is preferably 750°C or lower. "Furthermore, it is not necessary that all the aluminum layer 141 becomes the aluminum nitride layer 136a, but a part of the aluminum layer 141 may exist as a metal aluminum part.

(氧化處理步驟S103) 　　接著，將形成有氮化鋁層136a的陶瓷本體131裝入氣氛爐中進行氧化處理，形成氧化鋁層136。此時，上述的金屬鋁部亦被氧化，成為氧化鋁層136之一部分。 　　於氧化處理步驟S103中，在露點-20℃以下之乾燥空氣環境中，於處理溫度：1100℃以上1300℃以下之範圍內，上述的處理溫度之保持時間：1分鐘以上30分鐘以下之範圍內的條件下，實施氮化鋁層136a的氧化處理。(Oxidation treatment step S103) "Next, the ceramic body 131 with the aluminum nitride layer 136a formed thereon is charged into an atmosphere furnace and subjected to oxidation treatment to form an aluminum oxide layer 136. At this time, the aforementioned metal aluminum portion is also oxidized and becomes a part of the aluminum oxide layer 136. In the oxidation treatment step S103, in a dry air environment with a dew point of -20°C or less, and the treatment temperature: within the range of 1100°C or more and 1300°C or less, the holding time of the above-mentioned treatment temperature: within the range of 1 minute or more and 30 minutes or less Under the condition that the aluminum nitride layer 136a is oxidized.

此處，環境的露點較佳設為-30℃以下，更佳設為-40℃以下。 　　又，氧化處理步驟S103中的處理溫度之下限較佳設為1130℃以上，更佳設為1180℃以上。另一方面，氧化處理步驟S103中的處理溫度之上限較佳設為1250℃以下，更佳設為1200℃以下。 　　再者，氧化處理步驟S103中的處理溫度之保持時間之下限較佳設為3分鐘以上，更佳設為5分鐘以上。另一方面，處理溫度的保持時間之上限較佳設為20分鐘以下，更佳設為10分鐘以下。 　　還有，於此氧化處理步驟S103中，氮化鋁層136a幾乎全部變成氧化鋁層136。Here, the dew point of the environment is preferably set to -30°C or lower, and more preferably set to -40°C or lower. "In addition, the lower limit of the treatment temperature in the oxidation treatment step S103 is preferably 1130°C or higher, more preferably 1180°C or higher. On the other hand, the upper limit of the treatment temperature in the oxidation treatment step S103 is preferably set to 1250°C or lower, and more preferably set to 1200°C or lower. "Furthermore, the lower limit of the holding time of the treatment temperature in the oxidation treatment step S103 is preferably 3 minutes or more, more preferably 5 minutes or more. On the other hand, the upper limit of the holding time of the treatment temperature is preferably 20 minutes or less, more preferably 10 minutes or less. "In addition, in this oxidation treatment step S103, almost all of the aluminum nitride layer 136a becomes the aluminum oxide layer 136.

(鋁板接合步驟S104) 　　接著，隔著陶瓷基板130的氧化鋁層136，接合成為電路層112的鋁板122。此處，作為接合手段，使用焊材時，可適宜選擇固相擴散接合、暫態液相接合(TLP)等之既有的手段。於本實施形態中，如圖10所示，使用Al-Si系焊材126進行接合。(Aluminum plate joining step S104) "Next, the aluminum plate 122 which becomes the circuit layer 112 is joined via the aluminum oxide layer 136 of the ceramic substrate 130. As shown in FIG. Here, when a solder material is used as the joining means, existing means such as solid phase diffusion joining and transient liquid phase joining (TLP) can be appropriately selected. In this embodiment, as shown in FIG. 10, the Al-Si-based welding material 126 is used for joining.

具體而言，隔著Al-Si系的焊材126，層合陶瓷基板130與鋁板122，於積層方向以1kgf/cm2 以上10kgf/cm2 以下(0.098MPa以上0.980MPa以下)之範圍加壓之狀態下裝入真空加熱爐中，接合陶瓷基板130與鋁板122，形成電路層112。 　　此時的接合條件係真空條件為10-6 Pa以上10-3 Pa以下之範圍內，加熱溫度為580℃以上630℃以下之範圍內，上述加熱溫度的保持時間係設定在10分鐘以上45分鐘以下之範圍內。Specifically, the ceramic substrate 130 and the aluminum plate 122 are laminated through the Al-Si solder material 126, and the pressure is applied in the lamination direction in the range of 1kgf/cm 2 or more and 10kgf/cm 2 or less (0.098MPa or more and 0.980MPa or less) In this state, it is placed in a vacuum heating furnace, and the ceramic substrate 130 and the aluminum plate 122 are joined to form the circuit layer 112. The bonding conditions at this time are that the vacuum conditions are within the range of 10 -6 Pa or more and 10 -3 Pa or less, the heating temperature is within the range of 580°C or more and 630°C or less, and the holding time of the heating temperature is set at 10 minutes or more and 45 minutes. Within the following range.

藉由如以上之步驟，製造本實施形態之絕緣電路基板110。Through the above steps, the insulated circuit board 110 of this embodiment is manufactured.

(LED元件接合步驟S105) 　　接著，在絕緣電路基板110的電路層112之一面，藉由焊接而接合LED元件3。 　　藉由以上之步驟，製作出如圖7所示的LED模組101。(LED element joining step S105) "Next, the LED element 3 is joined on one surface of the circuit layer 112 of the insulating circuit board 110 by soldering.　　 Through the above steps, the LED module 101 as shown in FIG. 7 is produced.

依照如以上構成之絕緣電路基板110及LED模組101，由於陶瓷基板130具有由氮化矽所成的陶瓷本體131與氧化鋁層136，於陶瓷本體131與氧化鋁層136之界面中，在陶瓷本體131之玻璃相133中存在Al，故由氮化矽所成的陶瓷本體131與氧化鋁層136係強固地結合。又，由於接合陶瓷基板130的氧化鋁層136與電路層112(鋁板122)，陶瓷基板130與電路層112之接合可靠性高。因此，可提供接合可靠性優異之絕緣電路基板110。According to the insulated circuit substrate 110 and the LED module 101 configured as above, since the ceramic substrate 130 has a ceramic body 131 made of silicon nitride and an alumina layer 136, in the interface between the ceramic body 131 and the alumina layer 136, Al is present in the glass phase 133 of the ceramic body 131, so the ceramic body 131 made of silicon nitride and the alumina layer 136 are strongly combined. In addition, since the aluminum oxide layer 136 of the ceramic substrate 130 and the circuit layer 112 (aluminum plate 122) are bonded, the bonding reliability between the ceramic substrate 130 and the circuit layer 112 is high. Therefore, it is possible to provide an insulated circuit board 110 with excellent bonding reliability.

再者，依照本實施形態的絕緣電路基板110之製造方法，具備：在由氮化矽所成的陶瓷本體131之表面，形成厚度20μm以下的鋁層141之鋁層形成步驟S101，將形成有鋁層141的陶瓷本體131加熱到構成鋁層141之鋁或鋁合金的固相線溫度以上之溫度，形成氮化鋁層136a之氮化鋁層形成步驟S102，及對於形成有氮化鋁層136a的陶瓷本體131，進行氧化處理，形成氧化鋁層136之氧化處理步驟S103。因此，於氮化鋁層形成步驟S102中，Al侵入瓷本體131的玻璃相133中，同時氮化矽相132的氮(N)與鋁層141的鋁(Al)係反應，而形成氮化鋁層136a，藉由氧化處理步驟S103，可形成氧化鋁層136。 　　而且，由於具備隔著氧化鋁層136接合鋁板122之鋁板接合步驟S104，可容易地接合陶瓷基板130與鋁板122。Furthermore, the method of manufacturing the insulated circuit board 110 according to this embodiment includes: forming an aluminum layer 141 with a thickness of 20 μm or less on the surface of the ceramic body 131 made of silicon nitride. The ceramic body 131 of the aluminum layer 141 is heated to a temperature higher than the solidus temperature of the aluminum or aluminum alloy constituting the aluminum layer 141 to form the aluminum nitride layer forming step S102 of the aluminum nitride layer 136a, and for the aluminum nitride layer formed thereon The ceramic body 131 of 136a is subjected to oxidation treatment to form the oxidation treatment step S103 of the aluminum oxide layer 136. Therefore, in the aluminum nitride layer forming step S102, Al intrudes into the glass phase 133 of the porcelain body 131, and at the same time the nitrogen (N) of the silicon nitride phase 132 reacts with the aluminum (Al) of the aluminum layer 141 to form a nitride For the aluminum layer 136a, the aluminum oxide layer 136 can be formed through the oxidation treatment step S103. "Furthermore, since the aluminum plate joining step S104 for joining the aluminum plate 122 via the aluminum oxide layer 136 is provided, the ceramic substrate 130 and the aluminum plate 122 can be joined easily.

以上，說明本發明之實施形態，惟本發明不受此所限定，在不脫離其發明的技術思想之範圍內，可適宜變更。The embodiments of the present invention have been described above, but the present invention is not limited thereto, and can be changed as appropriate without departing from the technical idea of the invention.

例如，於本實施形態中，說明在絕緣電路基板上搭載LED元件，構成LED模組者，惟不受此所限定。例如，亦可在絕緣電路基板的電路層上，搭載功率半導體元件而構成功率模組，也可在絕緣電路基板的電路層上，搭載熱電元件而構成熱電模組。For example, in this embodiment, it is described that LED elements are mounted on an insulated circuit board to form an LED module, but it is not limited thereto. For example, a power semiconductor element may be mounted on the circuit layer of an insulated circuit substrate to form a power module, or a thermoelectric element may be mounted on the circuit layer of an insulated circuit substrate to form a thermoelectric module.

又，於本實施形態中，說明使用焊材接合陶瓷基板與鋁板者，惟不受此所限定，亦可藉由固相擴散接合而接合。再者，亦可使Cu、Si等的添加元素固著於接合面，使此等之添加元素擴散，藉由熔融・凝固的暫態液相接合法(TLP)進行接合。另外，亦可使接合界面成為半熔融狀態而接合。In addition, in this embodiment, it is described that the ceramic substrate and the aluminum plate are joined by using a solder material, but it is not limited to this, and the solid phase diffusion joining may be used for joining. Furthermore, it is also possible to fix the additive elements such as Cu and Si on the joining surface, diffuse these additive elements, and perform the joining by the transient liquid phase bonding method (TLP) of melting and solidification. In addition, it is also possible to make the joining interface into a semi-molten state and join.

再者，作為形成在陶瓷本體的鋁層，雖然舉出以純度99質量%以上的鋁所構成者為例而說明，惟不受此所限定，亦可為其他的鋁或鋁合金。此處，使用含Mg的鋁合金作為鋁層時，在氮化鋁層及氧化鋁層中存在Mg。還有，由於Mg為活性元素，而促進氮化矽與鋁層之反應，以充分的厚度形成氮化鋁層(及將此予氧化處理而得的氧化鋁層)，更強固地接合陶瓷本體與氮化鋁層(氧化鋁層)。 [實施例]In addition, as the aluminum layer formed on the ceramic body, although a description is given of an aluminum layer having a purity of 99% by mass or more as an example, it is not limited to this, and may be other aluminum or aluminum alloy. Here, when an aluminum alloy containing Mg is used as the aluminum layer, Mg is present in the aluminum nitride layer and the aluminum oxide layer. In addition, since Mg is an active element, it promotes the reaction between silicon nitride and aluminum layer to form an aluminum nitride layer (and an aluminum oxide layer obtained by pre-oxidation treatment) with a sufficient thickness, thereby more firmly joining the ceramic body And aluminum nitride layer (aluminum oxide layer). [Example]

以下，說明為了確認本發明之效果而進行的確認實驗之結果。Hereinafter, the result of the confirmation experiment performed to confirm the effect of the present invention will be described.

(實施例1) 　　準備由氮化矽所成的陶瓷板(40mm×40mm×0.32mmt)，以上述實施形態中記載之方法，在陶瓷板上形成氮化鋁層及氧化鋁層。於實施例1～9中，在表1所示的條件下形成氮化鋁層。於實施例11～12中，在表2所示的條件下形成氧化鋁層。再者，於習知例中，不形成氮化鋁層及氧化鋁層。 　　然後，對於所得之陶瓷基板，以表3、4中所示的方法接合鋁板，製造鋁/陶瓷接合體(絕緣電路基板)。(Example 1) "A ceramic plate (40 mm × 40 mm × 0.32 mmt) made of silicon nitride was prepared, and an aluminum nitride layer and an aluminum oxide layer were formed on the ceramic plate by the method described in the above embodiment. In Examples 1 to 9, an aluminum nitride layer was formed under the conditions shown in Table 1. In Examples 11 to 12, an aluminum oxide layer was formed under the conditions shown in Table 2. Furthermore, in the conventional example, the aluminum nitride layer and the aluminum oxide layer are not formed.　　 Then, to the obtained ceramic substrate, the aluminum plates were joined by the method shown in Tables 3 and 4 to produce an aluminum/ceramic joint (insulated circuit substrate).

還有，於表3、4中，「硬焊」係使用Al-Si系焊材(Si：5mass%，厚度7μm)進行接合。 　　表3、4中的「固相擴散」係藉由固相擴散接合來接合鋁板與陶瓷基板。 　　表3、4中的「TLP」係使Cu以0.2mg/cm2 固著於鋁板之接合面，藉由暫態液相接合法(TLP)進行接合。 　　再者，表3、4之鋁板接合步驟的環境為2.0×104 Pa之真空環境。In addition, in Tables 3 and 4, the "brazing" system uses Al-Si-based welding material (Si: 5 mass%, thickness 7 μm) for joining. The "solid phase diffusion" in Tables 3 and 4 is used to join the aluminum plate and the ceramic substrate by solid phase diffusion bonding. The "TLP" in Tables 3 and 4 is made by fixing Cu on the joint surface of the aluminum plate at 0.2 mg/cm 2 , and bonding by the transient liquid phase bonding method (TLP). Furthermore, the environment of the aluminum plate joining step in Tables 3 and 4 is a vacuum environment of 2.0×10 4 Pa.

對於如上述所得之鋁/陶瓷接合體(絕緣電路基板)，如以下地評價。The aluminum/ceramic joint (insulated circuit board) obtained as described above was evaluated as follows.

(氮化鋁層、氧化鋁層、玻璃相中有無Al之確認) 　　於本發明例1～9中，在氮化鋁層形成步驟S02後，於本發明例11～18中，在氧化處理步驟S103後，使用穿透型電子顯微鏡(FEI公司製Titan ChemiSTEM，加速電壓200kV)，觀察陶瓷基板之剖面，確認有無氮化鋁層、有無氧化鋁層、玻璃相中有無Al。再者，於習知例中，觀察接合鋁板之前的陶瓷基板。 　　再者，玻璃相係將Al、Si、O、N之合計值當作100原子%時，Si未達15原子%且O為3原子%以上25原子%以下之範圍內的區域。表1及表2中顯示評價結果。又，圖11中顯示本發明例1之觀察結果。(Confirmation of the presence or absence of Al in the aluminum nitride layer, aluminum oxide layer, and glass phase) 　　 In Examples 1 to 9 of the present invention, after the aluminum nitride layer forming step S02, in Examples 11 to 18 of the present invention, in the oxidation treatment step After S103, use a transmission electron microscope (FEI Company Titan ChemiSTEM, acceleration voltage 200kV) to observe the cross section of the ceramic substrate to confirm the presence or absence of aluminum nitride layer, aluminum oxide layer, and the presence or absence of Al in the glass phase. Furthermore, in the conventional example, the ceramic substrate before joining the aluminum plates is observed. "Furthermore, when the total value of Al, Si, O, and N is regarded as 100 at% in the glass phase, Si is less than 15 at% and O is in the region within the range of 3 at% to 25 at%. Table 1 and Table 2 show the evaluation results. In addition, the observation result of Example 1 of the present invention is shown in FIG. 11.

(氮化鋁層之面積率) 　　氮化鋁層之面積率係在形成氮化鋁層後(氮化鋁層形成步驟S02)，從上面使用EPMA(日本電子股份有限公司製JXA-8539F)，觀察陶瓷本體。此處，由於在金屬鋁部陶瓷本體之間存在氮化鋁層，金屬鋁部之面積與氮化鋁層之面積係視為相同，將(金屬鋁部之面積/鋁層之面積×100)當作氮化鋁層之面積率(%)。表1中顯示此結果。(The area ratio of the aluminum nitride layer) The area ratio of the aluminum nitride layer is after the aluminum nitride layer is formed (aluminum nitride layer formation step S02), and EPMA (JXA-8539F manufactured by JEOL Co., Ltd.) is used from above. Observe the ceramic body. Here, since there is an aluminum nitride layer between the aluminum metal part and the ceramic body, the area of the metal aluminum part and the area of the aluminum nitride layer are regarded as the same, which is (area of the metal aluminum part/area of the aluminum layer×100) Take it as the area ratio (%) of the aluminum nitride layer. This result is shown in Table 1.

(冷熱循環試驗) 　　使用冷熱衝擊試驗機(ESPEC股份有限公司製TSA-72ES)，對於絕緣電路基板，於氣相中，實施以-40℃5分鐘與以175℃5分鐘的800循環。 　　然後，如以下地評價陶瓷基板與鋁板之接合率。 　　再者，接合率之評價係在冷熱循環試驗前(初期接合率)與冷熱循環試驗後(循環後接合率)進行。(Cold and heat cycle test) 　　 Using a thermal shock tester (TSA-72ES manufactured by ESPEC Co., Ltd.), the insulated circuit board was subjected to 800 cycles at -40°C for 5 minutes and at 175°C for 5 minutes in the gas phase.　　 Then, the bonding ratio between the ceramic substrate and the aluminum plate was evaluated as follows. "Furthermore, the bonding rate is evaluated before the thermal cycle test (initial bonding rate) and after the thermal cycle test (bonding rate after the cycle).

接合率之評價係對於絕緣電路基板，對於陶瓷基板與鋁板(電路層及金屬層)之界面的接合率，使用超音波探傷裝置(股份有限公司日立Power Solutions製Fine SAT200)進行評價，由以下之式算出接合率。 　　此處，所謂的初期接合面積，就是在接合前應接合的面積，即本實施例中為電路層及金屬層之面積(37mm×37mm)。 　　(接合率)={(初期接合面積)-(剝離面積)}/(初期接合面積)×100 　　於將超音波探傷像予以二值化處理的影像中，由於剝離係以接合部內的白色部表示，故將此白色部的面積當作剝離面積。表3、4中記載此等之結果。The bonding rate is evaluated by using an ultrasonic flaw detection device (Fine SAT200 manufactured by Hitachi Power Solutions Co., Ltd.) for the bonding rate of the insulating circuit board and the interface between the ceramic substrate and the aluminum plate (circuit layer and metal layer). The formula calculates the bonding rate. "Here, the so-called initial bonding area is the area that should be bonded before bonding, that is, the area of the circuit layer and the metal layer (37mm×37mm) in this embodiment. (Joining rate)={(Initial joining area)-(Peeling area)}/(Initial joining area)×100 　　 In the image where the ultrasonic flaw detection image is binarized, the peeling is represented by the white part in the joint , So the area of this white part is regarded as the peeling area. These results are described in Tables 3 and 4.

Figure 02_image001
Figure 02_image001

Figure 02_image003
Figure 02_image003

Figure 02_image005
Figure 02_image005

Figure 02_image007
Figure 02_image007

在由氮化矽所成的陶瓷板之與鋁板的接合面，未形成氮化鋁層或氧化鋁層之習知例中，在冷熱循環後，接合率大幅降低。 　　相對於其，在陶瓷板之與鋁板的接合面形成氮化鋁層，於陶瓷板的玻璃相中存在Al之本發明例1-9，以及在陶瓷板之與鋁板之接合面形成氧化鋁層，於陶瓷板的玻璃相中存在Al之本發明例11-19中，冷熱循環前後的接合率之變化小。In the conventional example in which the aluminum nitride layer or the aluminum oxide layer is not formed on the joint surface of the ceramic plate made of silicon nitride with the aluminum plate, the joining rate is greatly reduced after the cooling and heating cycle. In contrast, an aluminum nitride layer was formed on the joint surface of the ceramic plate and the aluminum plate, the inventive examples 1-9 in which Al was present in the glass phase of the ceramic plate, and the aluminum oxide layer was formed on the joint surface of the ceramic plate and the aluminum plate , In Examples 11-19 of the present invention in which Al is present in the glass phase of the ceramic plate, the change in the bonding ratio before and after the cooling and heating cycle is small.

又，如本發明例1～9、11～19中所示，不論鋁板的接合方式為何，在硬焊、固相擴散接合、TLP的任一接合方式中，皆確認接合體的冷熱循環後之接合可靠性升高。 　　再者，如本發明例1～9、11～19中所示，不論鋁層及鋁板之組成為何，在純鋁及各種鋁合金，皆確認接合體的冷熱循環後之接合可靠性升高。 　　另外，如表1及表3中所示，確認隨著氮化鋁層之面積率變高，冷熱循環負荷時之接合可靠性升高。In addition, as shown in Examples 1-9 and 11-19 of the present invention, regardless of the bonding method of the aluminum plates, in any of the bonding methods of brazing, solid phase diffusion bonding, and TLP, it is confirmed that the bonding body is hot and cold after the heat cycle. The joint reliability is improved. "Furthermore, as shown in Examples 1-9 and 11-19 of the present invention, regardless of the composition of the aluminum layer and the aluminum plate, it was confirmed that the bonding reliability of the bonded body after the thermal cycle of the bonded body was improved in pure aluminum and various aluminum alloys.　　 In addition, as shown in Table 1 and Table 3, it was confirmed that as the area ratio of the aluminum nitride layer becomes higher, the bonding reliability under the cooling and heating cycle load increases.

(實施例2) 　　接著，準備由氮化矽所成的陶瓷板(40mm×40mm×0.32mmt)，以上述實施形態中記載之方法，在陶瓷板上形成氮化鋁層。於實施例21～24中，在表5所示之條件下形成氮化鋁層。 　　還有，於比較例中，在陶瓷板之表面，藉由濺鍍將氮化鋁層予以成膜。 　　然後，對於所得之陶瓷基板，使用Al-Si系焊材(Si：5mass%，厚度7μm)，於接合溫度620℃、保持時間30min、加壓壓力0.098MPa之條件下，接合純度99.99質量%以上(4N)之鋁板(厚度20μm)，製造鋁/陶瓷接合體(絕緣電路基板)。(Example 2) "Next, a ceramic plate (40 mm × 40 mm × 0.32 mmt) made of silicon nitride was prepared, and an aluminum nitride layer was formed on the ceramic plate by the method described in the above embodiment. In Examples 21-24, an aluminum nitride layer was formed under the conditions shown in Table 5.　　Also, in the comparative example, the aluminum nitride layer was formed by sputtering on the surface of the ceramic plate. Then, for the resulting ceramic substrate, using Al-Si solder material (Si: 5 mass%, thickness 7μm), under the conditions of a bonding temperature of 620°C, a holding time of 30 minutes, and a pressure of 0.098 MPa, the bonding purity is 99.99% by mass or more (4N) aluminum plate (thickness 20μm) to manufacture aluminum/ceramic joints (insulated circuit boards).

對於如上述所得之鋁/陶瓷接合體(絕緣電路基板)，與實施例1同樣地，確認有無氮化鋁層、玻璃相中有無Al、氮化鋁層之面積率、冷熱循環負荷前後之接合率。表5中顯示評價結果。For the aluminum/ceramic joint (insulated circuit board) obtained as described above, in the same way as in Example 1, the presence or absence of an aluminum nitride layer, the presence or absence of Al in the glass phase, the area ratio of the aluminum nitride layer, and the bonding before and after the thermal cycle load were confirmed Rate. Table 5 shows the evaluation results.

Figure 02_image009
Figure 02_image009

在由氮化矽所成的陶瓷板之表面，藉由濺鍍而成膜有氮化鋁層之比較例中，未形成氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層。又，於陶瓷本體之玻璃相中看不到Al。而且，冷熱循環負荷後之接合率大幅降低。In the comparative example in which the aluminum nitride layer is formed by sputtering on the surface of the ceramic plate made of silicon nitride, the nitrogen concentration is 50 atomic% or more and 80 atomic% or less and nitrogen in the thickness direction is not formed. The concentration of the first aluminum nitride layer is inclined. In addition, Al is not visible in the glass phase of the ceramic body. In addition, the joining rate after heating and cooling cycles is greatly reduced.

相對於其，於氧化鋁層具有氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層，與氮濃度為30原子%以上且未達50原子%之第2氮化鋁層的本發明例21-24中，冷熱循環前後的接合率之變化小。In contrast, the aluminum oxide layer has a first aluminum nitride layer with a nitrogen concentration of 50 atomic% or more and 80 atomic% or less and a nitrogen concentration gradient in the thickness direction, and the nitrogen concentration is 30 atomic% or more and less than 50%. In Inventive Examples 21-24 of the second aluminum nitride layer of atomic %, the change in the bonding ratio before and after the thermal cycle was small.

根據以上，依照本發明例，藉由在由氮化矽(Si3 N4 )所成的陶瓷構件之接合面，形成氮化鋁層或氧化鋁層，確認可提供在鋁構件不熔融下，以高可靠性接合陶瓷構件與鋁構件之陶瓷/鋁接合體。 [產業上的利用可能性]Based on the above, according to the example of the present invention, by forming an aluminum nitride layer or an aluminum oxide layer on the joint surface of a ceramic member made of silicon nitride (Si 3 N 4 ), it is confirmed that it can be provided without melting the aluminum member. A ceramic/aluminum joint body that joins ceramic components and aluminum components with high reliability. [Industrial Utilization Possibility]

依照本發明，可提供在鋁構件不熔融下，以高可靠性與由氮化矽(Si3 N4 )所成的陶瓷構件接合之陶瓷/鋁接合體。According to the present invention, it is possible to provide a ceramic/aluminum joint body that can be joined to a ceramic member made of silicon nitride (Si 3 N 4) with high reliability without melting the aluminum member.

1、101‧‧‧LED模組10、110‧‧‧絕緣電路基板(陶瓷/鋁接合體)12、112‧‧‧電路層(鋁板、鋁構件)13‧‧‧金屬層(鋁板、鋁構件)30、130‧‧‧陶瓷基板(陶瓷構件)31、131‧‧‧陶瓷本體32、132‧‧‧氮化矽相33、133‧‧‧玻璃相36‧‧‧氮化鋁層36A‧‧‧第1氮化鋁層36B‧‧‧第2氮化鋁層38‧‧‧金屬鋁部136‧‧‧氧化鋁層1,101‧‧‧LED module 10,110‧‧‧Insulated circuit board (ceramic/aluminum joint) 12,112‧‧‧Circuit layer (aluminum plate, aluminum component) 13‧‧‧Metal layer (aluminum plate, aluminum component) )30、130‧‧‧Ceramic substrate (ceramic component) 31,131‧‧‧Ceramic body 32,132‧‧‧Silicon nitride phase 33,133‧‧‧Glass phase 36‧‧‧Aluminum nitride layer 36A‧‧ ‧The first aluminum nitride layer 36B‧‧‧The second aluminum nitride layer 38‧‧‧Metal aluminum part 136‧‧‧Alumina layer

圖1係顯示使用本發明之第1實施形態的陶瓷/鋁接合體(絕緣電路基板)之LED模組之剖面圖。 　　圖2係本發明之第1實施形態的陶瓷/鋁接合體(絕緣電路基板)之陶瓷構件(陶瓷基板)與鋁構件(鋁板)的接合界面之模型圖。 　　圖3係本發明之第1實施形態的陶瓷/鋁接合體(絕緣電路基板)中之氮化鋁層之放大說明圖。 　　圖4係本發明之第1實施形態的陶瓷/鋁接合體(絕緣電路基板)中之接合前的陶瓷構件(陶瓷基板)之放大說明圖。 　　圖5係顯示本發明之第1實施形態的陶瓷/鋁接合體(絕緣電路基板)之製造方法之流程圖。 　　圖6係顯示本發明之第1實施形態的陶瓷/鋁接合體(絕緣電路基板)之製造方法之說明圖。 　　圖7係顯示使用本發明之第2實施形態的陶瓷/鋁接合體(絕緣電路基板)之LED模組之剖面圖。 　　圖8係本發明之第2實施形態的陶瓷/鋁接合體(絕緣電路基板)之陶瓷構件(陶瓷基板)與鋁構件(鋁板)的接合界面之模型圖。 　　圖9係顯示本發明之第2實施形態的陶瓷/鋁接合體(絕緣電路基板)之製造方法之流程圖。 　　圖10係顯示本發明之第2實施形態的陶瓷構件(陶瓷基板)之製造方法之說明圖。 　　圖11係本發明例1之陶瓷/鋁接合體(絕緣電路基板)中的陶瓷構件(陶瓷基板)與鋁構件(鋁板)的接合界面之元素映像圖。Fig. 1 is a cross-sectional view of an LED module using a ceramic/aluminum joint (insulated circuit board) according to the first embodiment of the present invention.　　 FIG. 2 is a model diagram of the bonding interface between the ceramic member (ceramic substrate) and the aluminum member (aluminum plate) of the ceramic/aluminum joint (insulated circuit board) according to the first embodiment of the present invention.　　 FIG. 3 is an enlarged explanatory view of the aluminum nitride layer in the ceramic/aluminum joint (insulated circuit board) according to the first embodiment of the present invention.　　 FIG. 4 is an enlarged explanatory view of the ceramic member (ceramic substrate) before joining in the ceramic/aluminum joint (insulated circuit substrate) of the first embodiment of the present invention.　　 FIG. 5 is a flowchart showing a method of manufacturing a ceramic/aluminum joint (insulated circuit board) according to the first embodiment of the present invention.　　 FIG. 6 is an explanatory diagram showing a method of manufacturing a ceramic/aluminum joint (insulated circuit board) according to the first embodiment of the present invention.　　 FIG. 7 is a cross-sectional view of an LED module using the ceramic/aluminum joint (insulated circuit board) according to the second embodiment of the present invention.　　 FIG. 8 is a model diagram of the bonding interface between the ceramic member (ceramic substrate) and the aluminum member (aluminum plate) of the ceramic/aluminum joint (insulated circuit board) according to the second embodiment of the present invention.　　 FIG. 9 is a flowchart showing a method of manufacturing a ceramic/aluminum joint (insulated circuit board) according to the second embodiment of the present invention.　　 FIG. 10 is an explanatory diagram showing a method of manufacturing a ceramic member (ceramic substrate) according to the second embodiment of the present invention.　　 FIG. 11 is an element mapping diagram of the bonding interface between the ceramic member (ceramic substrate) and the aluminum member (aluminum plate) in the ceramic/aluminum joint (insulated circuit substrate) of Example 1 of the present invention.

12‧‧‧電路層(鋁板、鋁構件) 12‧‧‧Circuit layer (aluminum plate, aluminum component)

13‧‧‧金屬層(鋁板、鋁構件) 13‧‧‧Metal layer (aluminum plate, aluminum component)

30‧‧‧陶瓷基板(陶瓷構件) 30‧‧‧Ceramic substrate (ceramic component)

31‧‧‧陶瓷本體 31‧‧‧Ceramic body

32‧‧‧氮化矽相 32‧‧‧Silicon Nitride Phase

33‧‧‧玻璃相 33‧‧‧glass phase

36‧‧‧氮化鋁層 36‧‧‧Aluminum nitride layer

Claims (9)

一種陶瓷/鋁接合體，其係將陶瓷構件與由鋁或鋁合金所成的鋁構件予以接合而成之陶瓷/鋁接合體，其特徵為：前述陶瓷構件具有由氮化矽所成的陶瓷本體及在此陶瓷本體中之與前述鋁構件之接合面所形成的氮化鋁層或氧化鋁層，隔著前述氮化鋁層或前述氧化鋁層，接合前述鋁構件，前述陶瓷本體具備氮化矽相與形成在此氮化矽相之間的玻璃相，在前述陶瓷本體的前述玻璃相中之與前述氮化鋁層或前述氧化鋁層之界面側部分存在Al，在前述陶瓷本體中之與前述鋁構件之接合面，形成有前述氮化鋁層，前述氮化鋁層係從前述陶瓷本體側起依順序具有：氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層，與氮濃度為30原子%以上且未達50原子%之第2氮化鋁層。 A ceramic/aluminum joint body, which is a ceramic/aluminum joint body formed by joining a ceramic member and an aluminum member made of aluminum or aluminum alloy, characterized in that the ceramic member has a ceramic made of silicon nitride The main body and the aluminum nitride layer or aluminum oxide layer formed on the joint surface of the ceramic main body with the aluminum member, the aluminum member is joined via the aluminum nitride layer or the aluminum oxide layer, and the ceramic main body is provided with nitrogen. The silicide phase and the glass phase formed between the silicon nitride phase, in the glass phase of the ceramic body, and the aluminum nitride layer or the aluminum oxide layer in the interface side part of the Al, in the ceramic body The joint surface with the aluminum member is formed with the aluminum nitride layer, and the aluminum nitride layer has in order from the ceramic body side: the nitrogen concentration is 50 atomic% or more and 80 atomic% or less and has in the thickness direction The first aluminum nitride layer where the nitrogen concentration is inclined, and the second aluminum nitride layer where the nitrogen concentration is 30 atomic% or more and less than 50 atomic %. 一種絕緣電路基板，其係將陶瓷基板與由鋁或鋁合金所成的鋁板予以接合而成之絕緣電路基板，其特徵為：前述陶瓷基板具有由氮化矽所成的陶瓷本體及在此陶瓷本體中之與前述鋁板之接合面所形成的氮化鋁層或氧化鋁層，隔著前述氮化鋁層或前述氧化鋁層，接合前述鋁 板，前述陶瓷本體具備氮化矽相與形成在此氮化矽相之間的玻璃相，在前述陶瓷本體的前述玻璃相中之與前述氮化鋁層或前述氧化鋁層之界面側部分存在Al，在前述陶瓷本體中之與前述鋁板之接合面，形成有前述氮化鋁層，前述氮化鋁層係從前述陶瓷本體側起依順序具有：氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾斜之第1氮化鋁層，與氮濃度為30原子%以上且未達50原子%之第2氮化鋁層。 An insulated circuit substrate is an insulated circuit substrate formed by joining a ceramic substrate and an aluminum plate made of aluminum or aluminum alloy, and is characterized in that the ceramic substrate has a ceramic body made of silicon nitride and the ceramic The aluminum nitride layer or aluminum oxide layer formed on the bonding surface of the main body and the aluminum plate is bonded to the aluminum through the aluminum nitride layer or the aluminum oxide layer Plate, the ceramic body is provided with a silicon nitride phase and a glass phase formed between the silicon nitride phase, and the glass phase of the ceramic body exists at the interface side with the aluminum nitride layer or the aluminum oxide layer Al, the aluminum nitride layer is formed on the joint surface of the ceramic body with the aluminum plate, and the aluminum nitride layer has in order from the ceramic body side: the nitrogen concentration is 50 atomic% or more and 80 atomic% or less In addition, there is a first aluminum nitride layer in which the concentration of nitrogen is inclined in the thickness direction, and a second aluminum nitride layer with a nitrogen concentration of 30 atomic% or more and less than 50 atomic %. 一種LED模組，其特徵為具備：如請求項2之絕緣電路基板，及在前述鋁板之與前述陶瓷基板相反側之面所接合的LED元件。 An LED module is characterized by comprising: an insulated circuit substrate according to claim 2 and an LED element bonded to the surface of the aluminum plate on the opposite side of the ceramic substrate. 一種陶瓷構件，其特徵為具備由氮化矽所成的陶瓷本體與在此陶瓷本體之表面所形成的氮化鋁層或氧化鋁層，前述陶瓷本體具備氮化矽相與形成在此氮化矽相之間的玻璃相，在前述陶瓷本體的前述玻璃相中之與前述氮化鋁層或前述氧化鋁層之界面側部分存在Al，在前述陶瓷本體之表面，形成有前述氮化鋁層，前述氮化鋁層係從前述陶瓷本體側起依順序具有：氮濃度為50原子%以上80原子%以下且在厚度方向中具有氮的濃度傾 斜之第1氮化鋁層，與氮濃度為30原子%以上且未達50原子%之第2氮化鋁層。 A ceramic component, characterized by having a ceramic body made of silicon nitride and an aluminum nitride layer or aluminum oxide layer formed on the surface of the ceramic body. The ceramic body has a silicon nitride phase and a nitride layer formed thereon. In the glass phase between the silicon phases, in the glass phase of the ceramic body, Al is present at the interface side with the aluminum nitride layer or the aluminum oxide layer, and the aluminum nitride layer is formed on the surface of the ceramic body , The aluminum nitride layer has in order from the ceramic body side: a nitrogen concentration of 50 atomic% or more and 80 atomic% or less and a nitrogen concentration in the thickness direction The oblique first aluminum nitride layer and the second aluminum nitride layer with a nitrogen concentration of 30 atomic% or more and less than 50 atomic %. 如請求項4之陶瓷構件，其中在前述陶瓷本體之表面，形成有前述氮化鋁層，在此氮化鋁層中之與前述陶瓷本體相反側之面，形成有金屬鋁部。 The ceramic component of claim 4, wherein the aluminum nitride layer is formed on the surface of the ceramic body, and the aluminum nitride layer is formed on the surface opposite to the ceramic body in the aluminum nitride layer. 一種陶瓷/鋁接合體之製造方法，其係製造如請求項1之陶瓷/鋁接合體的陶瓷/鋁接合體之製造方法，其特徵為具備：在由氮化矽所成的陶瓷本體之表面，形成厚度20μm以下的鋁層之鋁層形成步驟，將形成有前述鋁層的陶瓷本體加熱到前述鋁層的固相線溫度以上之溫度，形成氮化鋁層之氮化鋁層形成步驟，與隔著前述氮化鋁層，接合鋁構件之鋁構件接合步驟。 A method for manufacturing a ceramic/aluminum joint body, which is a method for manufacturing a ceramic/aluminum joint body such as the ceramic/aluminum joint body of claim 1, characterized by having: on the surface of a ceramic body made of silicon nitride , Forming an aluminum layer forming an aluminum layer with a thickness of 20 μm or less, heating the ceramic body formed with the aluminum layer to a temperature above the solidus temperature of the aluminum layer to form an aluminum nitride layer forming an aluminum nitride layer, A step of joining the aluminum member to the aluminum member via the aluminum nitride layer. 如請求項6之陶瓷/鋁接合體之製造方法，其具備：使前述氮化鋁層氧化而形成氧化鋁層之氧化處理步驟，與隔著前述氧化鋁層，接合鋁構件之鋁構件接合步驟。 The method for manufacturing a ceramic/aluminum junction according to claim 6, comprising: an oxidation treatment step of oxidizing the aluminum nitride layer to form an aluminum oxide layer, and an aluminum member joining step of joining the aluminum member via the aluminum oxide layer . 一種絕緣電路基板之製造方法，其係製造如請求項2之絕緣電路基板的絕緣電路基板之製造方法，其特徵為具備： 在由氮化矽所成的陶瓷本體之表面，形成厚度20μm以下的鋁層之鋁層形成步驟，將形成有前述鋁層的陶瓷本體加熱到前述鋁層的固相線溫度以上之溫度，形成氮化鋁層之氮化鋁層形成步驟，與隔著前述氮化鋁層，接合鋁板之鋁板接合步驟。 A method for manufacturing an insulated circuit board, which is a method for manufacturing an insulated circuit board such as the insulated circuit board of claim 2, characterized by having: On the surface of the ceramic body made of silicon nitride, the aluminum layer forming step of forming an aluminum layer with a thickness of 20 μm or less is to heat the ceramic body with the aluminum layer to a temperature above the solidus temperature of the aluminum layer to form The aluminum nitride layer forming step of the aluminum nitride layer and the aluminum plate joining step of joining the aluminum plate with the aluminum nitride layer interposed therebetween. 如請求項8之絕緣電路基板之製造方法，其具備：使前述氮化鋁層氧化而形成氧化鋁層之氧化處理步驟，與隔著前述氧化鋁層，接合鋁板之鋁板接合步驟。 The method of manufacturing an insulated circuit board according to claim 8, comprising: an oxidation treatment step of oxidizing the aluminum nitride layer to form an aluminum oxide layer, and an aluminum plate bonding step of joining the aluminum plate via the aluminum oxide layer.
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