JP2007258238A - 基板処理装置、堆積物モニタ装置、及び堆積物モニタ方法 - Google Patents
基板処理装置、堆積物モニタ装置、及び堆積物モニタ方法 Download PDFInfo
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- JP2007258238A JP2007258238A JP2006077264A JP2006077264A JP2007258238A JP 2007258238 A JP2007258238 A JP 2007258238A JP 2006077264 A JP2006077264 A JP 2006077264A JP 2006077264 A JP2006077264 A JP 2006077264A JP 2007258238 A JP2007258238 A JP 2007258238A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
- G01J3/0218—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using optical fibers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0291—Housings; Spectrometer accessories; Spatial arrangement of elements, e.g. folded path arrangements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32972—Spectral analysis
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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Abstract
【解決手段】基板処理装置10は、ウエハWにエッチング処理を施すためのチャンバ11を備える。チャンバ11の内側壁11aには堆積物モニタ装置50が設置される。堆積物モニタ装置50は、光ファイバ60と、光ファイバ60の一端に接続されたレーザ71と、光ファイバ60の他端に接続されたフォトダイオード73とを備える。堆積物モニタ装置50は、チャンバ11内に露出する光ファイバ60の露出部61に付着した堆積物の直接分析を行う。
【選択図】図2
Description
11 チャンバ
11a 内側壁
11a’,11a” 細孔
43 デポシールド(デポジットシールド)
43a’,43a” 細孔
50,50’ 堆積物モニタ装置
55a,55b コネクタ
60 光ファイバ
61 露出部
71 レーザ
73 フォトダイオード(PD)
Claims (13)
- 被処理基板に所定の処理を施す処理室の内壁表面に付着する堆積物をモニタする堆積物モニタ装置を備える基板処理装置において、前記堆積物モニタ装置は、前記処理室内に少なくとも一部が露出するように配設された光ファイバと、前記光ファイバの一端に接続され前記光ファイバに入射光を投光する投光部と、前記光ファイバの他端に接続され前記光ファイバを通過した光を受光する受光部とを備えることを特徴とする基板処理装置。
- 前記投光部は単一波長の光を出射する少なくとも1つの光源を含み、前記受光部は前記受光した光の光量及び光強度の少なくとも一方を検知する光センサを含むことを特徴とする請求項1記載の基板処理装置。
- 前記単一波長は、前記処理室内において発光する光の波長とは異なることを特徴とする請求項2記載の基板処理装置。
- 前記モニタ結果に基づいて、前記露出部の表面に付着した堆積物の膜厚を算出する算出装置を備えることを特徴とする請求項1乃至3のいずれか1項に記載の基板処理装置。
- 前記投光部は広帯域に亘る波長の光を出射する光源を含み、前記受光部は前記受光した光を分光する分光器を含むことを特徴とする請求項1記載の基板処理装置。
- 前記分光された光のスペクトル分布を作成するスペクトル作成装置を備えることを特徴とする請求項5記載の基板処理装置。
- 前記堆積物モニタ装置は前記堆積物の成分分析を行うことを特徴とする請求項5又は6記載の基板処理装置。
- 前記露出部の表面には鏡面処理が施されていることを特徴とする請求項1乃至7のいずれか1項に記載の基板処理装置。
- 前記投光部及び前記受光部は前記処理室の外部に配設されることを特徴とする請求項1乃至8のいずれか1項に記載の基板処理装置。
- 前記処理室には、前記露出部を埋設するための溝が形成されていることを特徴とする請求項1乃至9のいずれか1項に記載の基板処理装置。
- 前記堆積物モニタ装置によるモニタ結果に応じたフィードバック制御を行う制御装置を備えることを特徴とする請求項1乃至10のいずれか1項に記載の基板処理装置。
- 所定の処理を施す処理室の内壁表面に付着する堆積物をモニタする堆積物モニタ装置であって、前記処理室内に少なくとも一部が露出するように配設された光ファイバと、前記光ファイバの一端に接続され前記光ファイバに入射光を投光する投光部と、前記光ファイバの他端に接続され前記光ファイバを通過した光を受光する受光部とを備えることを特徴とする堆積物モニタ装置。
- 所定の処理を施す処理室の内壁表面に付着する堆積物をモニタする堆積物モニタ方法であって、前記処理室内に少なくとも一部が露出するように配設された光ファイバの一端から入射光を投光する投光ステップと、前記光ファイバの他端から当該光ファイバを通過した光を受光する受光ステップとを有することを特徴とする堆積物モニタ方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006077264A JP4878187B2 (ja) | 2006-03-20 | 2006-03-20 | 基板処理装置、堆積物モニタ装置、及び堆積物モニタ方法 |
US11/685,307 US20070215043A1 (en) | 2006-03-20 | 2007-03-13 | Substrate processing apparatus, deposit monitoring apparatus, and deposit monitoring method |
KR1020070026777A KR100819313B1 (ko) | 2006-03-20 | 2007-03-19 | 기판 처리 장치, 퇴적물 모니터 장치 및 퇴적물 모니터방법 |
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JP2006077264A JP4878187B2 (ja) | 2006-03-20 | 2006-03-20 | 基板処理装置、堆積物モニタ装置、及び堆積物モニタ方法 |
Publications (2)
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JP2007258238A true JP2007258238A (ja) | 2007-10-04 |
JP4878187B2 JP4878187B2 (ja) | 2012-02-15 |
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JP2006077264A Expired - Fee Related JP4878187B2 (ja) | 2006-03-20 | 2006-03-20 | 基板処理装置、堆積物モニタ装置、及び堆積物モニタ方法 |
Country Status (3)
Country | Link |
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US (1) | US20070215043A1 (ja) |
JP (1) | JP4878187B2 (ja) |
KR (1) | KR100819313B1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI476085B (zh) * | 2007-11-30 | 2015-03-11 | Hamamatsu Photonics Kk | Processing object cutting method |
CN111406304A (zh) * | 2017-11-28 | 2020-07-10 | 朗姆研究公司 | 等离子体室壁状况的实时监测方法和装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100816453B1 (ko) * | 2006-06-28 | 2008-03-27 | (주)쎄미시스코 | 공정챔버의 실시간 리크 검출 시스템 |
US8393197B2 (en) * | 2008-07-24 | 2013-03-12 | Pivotal Systems Corporation | Method and apparatus for the measurement of atmospheric leaks in the presence of chamber outgassing |
Citations (4)
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JPH0786254A (ja) * | 1993-09-20 | 1995-03-31 | Hitachi Ltd | 半導体製造装置及び半導体製造方法 |
JP2002367966A (ja) * | 2001-06-07 | 2002-12-20 | Hitachi Ltd | 半導体製造装置 |
JP2003077843A (ja) * | 2001-08-31 | 2003-03-14 | Toshiba Corp | 半導体装置の製造方法、半導体装置の製造装置、半導体装置の製造システム、および半導体製造装置のクリーニング方法 |
JP2003163203A (ja) * | 2001-11-28 | 2003-06-06 | Hitachi Ltd | 半導体製造装置 |
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JPH05259250A (ja) * | 1992-03-16 | 1993-10-08 | Hitachi Ltd | プラズマ処理装置のプラズマモニタ装置 |
DE4445762A1 (de) * | 1994-12-21 | 1996-06-27 | Adolf Slaby Inst Forschungsges | Verfahren und Vorrichtung zum Bestimmen absoluter Plasmaparameter |
US6010744A (en) * | 1997-12-23 | 2000-01-04 | Advanced Technology Materials, Inc. | Method for nucleation controlled chemical vapor deposition of metal oxide ferroelectric thin films |
KR20030000274A (ko) * | 2001-06-22 | 2003-01-06 | 주식회사 파이맥스 | 반도체 제조공정에서 실시간 플라즈마 측정과 박막분석을위한 다채널 분광분석기 |
JP3982402B2 (ja) * | 2002-02-28 | 2007-09-26 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
US6902646B2 (en) * | 2003-08-14 | 2005-06-07 | Advanced Energy Industries, Inc. | Sensor array for measuring plasma characteristics in plasma processing environments |
US7384693B2 (en) * | 2004-04-28 | 2008-06-10 | Intel Corporation | Diamond-like carbon films with low dielectric constant and high mechanical strength |
-
2006
- 2006-03-20 JP JP2006077264A patent/JP4878187B2/ja not_active Expired - Fee Related
-
2007
- 2007-03-13 US US11/685,307 patent/US20070215043A1/en not_active Abandoned
- 2007-03-19 KR KR1020070026777A patent/KR100819313B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0786254A (ja) * | 1993-09-20 | 1995-03-31 | Hitachi Ltd | 半導体製造装置及び半導体製造方法 |
JP2002367966A (ja) * | 2001-06-07 | 2002-12-20 | Hitachi Ltd | 半導体製造装置 |
JP2003077843A (ja) * | 2001-08-31 | 2003-03-14 | Toshiba Corp | 半導体装置の製造方法、半導体装置の製造装置、半導体装置の製造システム、および半導体製造装置のクリーニング方法 |
JP2003163203A (ja) * | 2001-11-28 | 2003-06-06 | Hitachi Ltd | 半導体製造装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI476085B (zh) * | 2007-11-30 | 2015-03-11 | Hamamatsu Photonics Kk | Processing object cutting method |
CN111406304A (zh) * | 2017-11-28 | 2020-07-10 | 朗姆研究公司 | 等离子体室壁状况的实时监测方法和装置 |
JP2021504977A (ja) * | 2017-11-28 | 2021-02-15 | ラム リサーチ コーポレーションLam Research Corporation | プラズマチャンバ壁の状態のリアルタイム監視のための方法および装置 |
JP7391859B2 (ja) | 2017-11-28 | 2023-12-05 | ラム リサーチ コーポレーション | プラズマチャンバ壁の状態のリアルタイム監視のための方法および装置 |
Also Published As
Publication number | Publication date |
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KR20070095227A (ko) | 2007-09-28 |
KR100819313B1 (ko) | 2008-04-03 |
JP4878187B2 (ja) | 2012-02-15 |
US20070215043A1 (en) | 2007-09-20 |
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