JP2007234850A5 - - Google Patents

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Publication number
JP2007234850A5
JP2007234850A5 JP2006054460A JP2006054460A JP2007234850A5 JP 2007234850 A5 JP2007234850 A5 JP 2007234850A5 JP 2006054460 A JP2006054460 A JP 2006054460A JP 2006054460 A JP2006054460 A JP 2006054460A JP 2007234850 A5 JP2007234850 A5 JP 2007234850A5
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JP
Japan
Prior art keywords
gate
semiconductor device
temperature
central region
connection lines
Prior art date
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Application number
JP2006054460A
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English (en)
Japanese (ja)
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JP5014646B2 (ja
JP2007234850A (ja
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Priority to JP2006054460A priority Critical patent/JP5014646B2/ja
Priority claimed from JP2006054460A external-priority patent/JP5014646B2/ja
Publication of JP2007234850A publication Critical patent/JP2007234850A/ja
Publication of JP2007234850A5 publication Critical patent/JP2007234850A5/ja
Application granted granted Critical
Publication of JP5014646B2 publication Critical patent/JP5014646B2/ja
Active legal-status Critical Current
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JP2006054460A 2006-03-01 2006-03-01 半導体装置 Active JP5014646B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006054460A JP5014646B2 (ja) 2006-03-01 2006-03-01 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006054460A JP5014646B2 (ja) 2006-03-01 2006-03-01 半導体装置

Publications (3)

Publication Number Publication Date
JP2007234850A JP2007234850A (ja) 2007-09-13
JP2007234850A5 true JP2007234850A5 (enExample) 2009-02-26
JP5014646B2 JP5014646B2 (ja) 2012-08-29

Family

ID=38555132

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006054460A Active JP5014646B2 (ja) 2006-03-01 2006-03-01 半導体装置

Country Status (1)

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JP (1) JP5014646B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6115050B2 (ja) * 2012-09-10 2017-04-19 トヨタ自動車株式会社 半導体装置
DE112012007238B4 (de) 2012-12-21 2021-11-11 Denso Corporation Halbleitervorrichtung
DE102017110536B4 (de) * 2017-05-15 2022-06-30 Infineon Technologies Ag Halbleitervorrichtung mit breiter Bandlücke, die Gatefinger zwischen Bondpads enthält, und Halbleitermodul
JP7095316B2 (ja) * 2018-03-06 2022-07-05 株式会社デンソー 半導体装置
WO2020162013A1 (ja) 2019-02-07 2020-08-13 富士電機株式会社 半導体装置
JP7242491B2 (ja) 2019-09-20 2023-03-20 株式会社東芝 半導体装置及び半導体回路
JP7305589B2 (ja) 2020-03-19 2023-07-10 株式会社東芝 半導体装置及び半導体回路
JP7490604B2 (ja) * 2021-03-22 2024-05-27 株式会社東芝 半導体装置
CN117577672A (zh) * 2023-11-30 2024-02-20 江苏易矽科技有限公司 一种具有多有效栅的igbt结构

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0823096A (ja) * 1994-07-08 1996-01-23 Toshiba Corp 半導体装置
GB9818044D0 (en) * 1998-08-20 1998-10-14 Koninkl Philips Electronics Nv Power transistor device
JP2000101076A (ja) * 1998-09-25 2000-04-07 Toshiba Corp 絶縁ゲート型半導体素子とその駆動方法
JP4086558B2 (ja) * 2002-06-21 2008-05-14 三洋電機株式会社 半導体装置およびその製造方法
JP3997126B2 (ja) * 2002-08-29 2007-10-24 株式会社ルネサステクノロジ トレンチゲート型半導体装置
JP4130356B2 (ja) * 2002-12-20 2008-08-06 株式会社東芝 半導体装置
JP3906213B2 (ja) * 2004-03-10 2007-04-18 株式会社東芝 半導体装置
JP2005302953A (ja) * 2004-04-09 2005-10-27 Toshiba Corp 半導体装置

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