JP2007221560A - 固体撮像素子及びその駆動方法並びに撮像装置 - Google Patents
固体撮像素子及びその駆動方法並びに撮像装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000012546 transfer Methods 0.000 claims abstract description 62
- 238000006243 chemical reaction Methods 0.000 claims abstract description 39
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000010410 layer Substances 0.000 claims description 22
- 239000012535 impurity Substances 0.000 claims description 15
- 239000002344 surface layer Substances 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 6
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- 238000005259 measurement Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
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- H—ELECTRICITY
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
- H01L27/14818—Optical shielding
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/625—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of smear
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
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Abstract
【解決手段】半導体基板の表面部に二次元アレイ状に形成された複数の光電変換素子と、光電変換素子の側部に形成され読み出しパルスが印加されたと光電変換素子の信号電荷が読み出され転送パルスが印加されたとき前記読み出された信号電荷を転送する電荷転送路と、半導体基板の表面に絶縁層を介して積層され光電変換素子の各々の直上に開口を有する導電性の遮光膜とを備える固体撮像素子の駆動方法において、読み出しパルス131を電荷転送路の読み出し電極に印加するとき読み出しパルス131と同極性の電位135を遮光膜に印加し、読み出しパルス131が印加されない間は読み出しパルス131と反対極性の電位を遮光膜に印加する。
【選択図】図4
Description
20 撮像素子駆動部
100 固体撮像素子
101 フォトダイオード
102 垂直転送路(VCCD)
103 水平転送路(HCCD)
104 出力アンプ
105 パッド(遮光膜への外部パルスの入力端子)
112 フォトダイオードを構成するn型領域部
115 垂直転送路の埋め込みチャネル
116 高濃度不純物表面層
116a 高濃度部
116b 低濃度部
121 導電性の遮光膜
121a 遮光膜開口
130 掃き出しパルス
131 読み出しパルス
132 転送パルス
135 遮光膜印加電圧パルス
Claims (10)
- 半導体基板の表面部に二次元アレイ状に形成された複数の光電変換素子と、該光電変換素子の側部に形成され読み出しパルスが印加されたと該光電変換素子の信号電荷が読み出され転送パルスが印加されたとき前記読み出された前記信号電荷を転送する電荷転送路と、前記半導体基板の表面に絶縁層を介して積層され前記光電変換素子の各々の直上に開口を有し前記読み出しパルスが前記電荷転送路の読み出し電極に印加されるとき該読み出しパルスと同極性の電位が印加され該読み出しパルスが印加されない間は該読み出しパルスと反対極性の電位が印加される導電性の遮光膜とを備えることを特徴とする固体撮像素子。
- 前記光電変換素子の表面部に設ける不純物表面層が中央部分の高濃度領域部と周辺部分の低濃度領域部とで構成され、前記遮光膜の前記開口の端部が前記低濃度領域部を覆う位置まで延設されることを特徴とする請求項1に記載の固体撮像素子。
- 前記同極性の電位は前記読み出しパルスに所定時間先行して前記遮光膜に印加され、該読み出しパルスの終了後の所定時間遅れて前記反対極性の電位が印加されることを特徴とする請求項2に記載の固体撮像素子。
- 半導体基板の表面部に二次元アレイ状に形成された複数の光電変換素子と、該光電変換素子の側部に形成され読み出しパルスが印加されたと該光電変換素子の信号電荷が読み出され転送パルスが印加されたとき前記読み出された前記信号電荷を転送する電荷転送路と、前記半導体基板の表面に絶縁層を介して積層され前記光電変換素子の各々の直上に開口を有する導電性の遮光膜とを備える固体撮像素子の駆動方法において、前記読み出しパルスを前記電荷転送路の読み出し電極に印加するとき該読み出しパルスと同極性の電位を前記遮光膜に印加し、該読み出しパルスが印加されない間は該読み出しパルスと反対極性の電位を前記遮光膜に印加することを特徴とする固体撮像素子の駆動方法。
- 前記同極性の電位を前記読み出しパルスに所定時間先行して前記遮光膜に印加し、該読み出しパルスの終了後の所定時間遅れて前記反対極性の電位を前記遮光膜に印加することを特徴とする請求項4に記載の固体撮像素子の駆動方法。
- 前記同極性の電位は、方形状または台形状の電位波形として前記遮光膜に印加されることを特徴とする請求項4または請求項5に記載の固体撮像素子の駆動方法。
- 半導体基板の表面部に二次元アレイ状に形成された複数の光電変換素子と、該光電変換素子の側部に形成され読み出しパルスが印加されたと該光電変換素子の信号電荷が読み出され転送パルスが印加されたとき前記読み出された前記信号電荷を転送する電荷転送路と、前記半導体基板の表面に絶縁層を介して積層され前記光電変換素子の各々の直上に開口を有する導電性の遮光膜と、前記読み出しパルスを前記電荷転送路の読み出し電極に印加するとき該読み出しパルスと同極性の電位を前記遮光膜に印加し該読み出しパルスが印加されない間は該読み出しパルスと反対極性の電位を前記遮光膜に印加する撮像素子駆動手段とを備えることを特徴とする撮像装置。
- 前記光電変換素子の表面部に設ける不純物表面層が中央部分の高濃度領域部と周辺部分の低濃度領域部とで構成され、前記遮光膜の前記開口の端部が前記低濃度領域部を覆う位置まで延設されることを特徴とする請求項7に記載の撮像装置。
- 前記撮像素子駆動手段は、前記同極性の電位を前記読み出しパルスに所定時間先行して前記遮光膜に印加し、該読み出しパルスの終了後の所定時間遅れて前記反対極性の電位を前記遮光膜に印加することを特徴とする請求項7または請求項8に記載の撮像装置。
- 前記撮像素子駆動手段は、前記同極性の電位を、方形状または台形状の電位波形として前記遮光膜に印加することを特徴とする請求項7乃至請求項9のいずれかに記載の撮像装置。
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JP2006040966A JP4774311B2 (ja) | 2006-02-17 | 2006-02-17 | 固体撮像素子及びその駆動方法並びに撮像装置 |
US11/705,766 US7804534B2 (en) | 2006-02-17 | 2007-02-14 | Solid-state imaging device, driving method thereof, and imaging apparatus |
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JP2006040966A JP4774311B2 (ja) | 2006-02-17 | 2006-02-17 | 固体撮像素子及びその駆動方法並びに撮像装置 |
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JP2007221560A true JP2007221560A (ja) | 2007-08-30 |
JP4774311B2 JP4774311B2 (ja) | 2011-09-14 |
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US (1) | US7804534B2 (ja) |
JP (1) | JP4774311B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009081402A (ja) * | 2007-09-27 | 2009-04-16 | Sony Corp | 固体撮像装置、固体撮像装置の製造方法及び撮像装置 |
US7714404B2 (en) * | 2007-09-06 | 2010-05-11 | Fujifilm Corporation | Solid-state imaging device |
CN102130140A (zh) * | 2008-01-21 | 2011-07-20 | 索尼株式会社 | 固体摄像装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7473977B2 (en) * | 2003-03-06 | 2009-01-06 | Sony Corporation | Method of driving solid state image sensing device |
JP2009089075A (ja) * | 2007-09-28 | 2009-04-23 | Fujifilm Corp | 撮像素子の駆動方法及び撮像装置 |
JP5328224B2 (ja) * | 2008-05-01 | 2013-10-30 | キヤノン株式会社 | 固体撮像装置 |
US8237832B2 (en) * | 2008-05-30 | 2012-08-07 | Omnivision Technologies, Inc. | Image sensor with focusing interconnections |
JP5396809B2 (ja) * | 2008-10-17 | 2014-01-22 | ソニー株式会社 | 固体撮像装置、カメラ、および、固体撮像装置の製造方法 |
JP5641287B2 (ja) * | 2010-03-31 | 2014-12-17 | ソニー株式会社 | 固体撮像装置、固体撮像装置の駆動方法、および、電子機器 |
JP2011249461A (ja) * | 2010-05-25 | 2011-12-08 | Toshiba Corp | 固体撮像装置 |
JP5637384B2 (ja) * | 2010-12-15 | 2014-12-10 | ソニー株式会社 | 固体撮像素子および駆動方法、並びに電子機器 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0244871A (ja) * | 1988-08-04 | 1990-02-14 | Nec Ic Microcomput Syst Ltd | 固体撮像装置 |
JP2004273640A (ja) * | 2003-03-06 | 2004-09-30 | Sony Corp | 固体撮像素子及びその製造方法 |
JP2005294857A (ja) * | 2001-05-16 | 2005-10-20 | Matsushita Electric Ind Co Ltd | 固体撮像装置の駆動方法 |
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JPH07153932A (ja) | 1993-09-30 | 1995-06-16 | Sony Corp | 固体撮像装置 |
US5736756A (en) * | 1994-09-29 | 1998-04-07 | Sony Corporation | Solid-state image sensing device with lght shielding film |
US7473977B2 (en) * | 2003-03-06 | 2009-01-06 | Sony Corporation | Method of driving solid state image sensing device |
JP2007324304A (ja) * | 2006-05-31 | 2007-12-13 | Fujifilm Corp | 固体撮像素子及び撮像装置 |
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2006
- 2006-02-17 JP JP2006040966A patent/JP4774311B2/ja not_active Expired - Fee Related
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2007
- 2007-02-14 US US11/705,766 patent/US7804534B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0244871A (ja) * | 1988-08-04 | 1990-02-14 | Nec Ic Microcomput Syst Ltd | 固体撮像装置 |
JP2005294857A (ja) * | 2001-05-16 | 2005-10-20 | Matsushita Electric Ind Co Ltd | 固体撮像装置の駆動方法 |
JP2004273640A (ja) * | 2003-03-06 | 2004-09-30 | Sony Corp | 固体撮像素子及びその製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7714404B2 (en) * | 2007-09-06 | 2010-05-11 | Fujifilm Corporation | Solid-state imaging device |
JP2009081402A (ja) * | 2007-09-27 | 2009-04-16 | Sony Corp | 固体撮像装置、固体撮像装置の製造方法及び撮像装置 |
CN102130140A (zh) * | 2008-01-21 | 2011-07-20 | 索尼株式会社 | 固体摄像装置 |
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JP4774311B2 (ja) | 2011-09-14 |
US7804534B2 (en) | 2010-09-28 |
US20080055449A1 (en) | 2008-03-06 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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LAPS | Cancellation because of no payment of annual fees |