JP2007208245A5 - - Google Patents

Download PDF

Info

Publication number
JP2007208245A5
JP2007208245A5 JP2006353324A JP2006353324A JP2007208245A5 JP 2007208245 A5 JP2007208245 A5 JP 2007208245A5 JP 2006353324 A JP2006353324 A JP 2006353324A JP 2006353324 A JP2006353324 A JP 2006353324A JP 2007208245 A5 JP2007208245 A5 JP 2007208245A5
Authority
JP
Japan
Prior art keywords
amount
exposure
focus position
offset amount
library
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006353324A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007208245A (ja
JP4898419B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006353324A priority Critical patent/JP4898419B2/ja
Priority claimed from JP2006353324A external-priority patent/JP4898419B2/ja
Priority to US11/618,137 priority patent/US7771905B2/en
Priority to TW096100220A priority patent/TWI356283B/zh
Priority to KR1020070000828A priority patent/KR100847633B1/ko
Publication of JP2007208245A publication Critical patent/JP2007208245A/ja
Publication of JP2007208245A5 publication Critical patent/JP2007208245A5/ja
Application granted granted Critical
Publication of JP4898419B2 publication Critical patent/JP4898419B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2006353324A 2006-01-05 2006-12-27 露光量のおよびフォーカス位置のオフセット量を求める方法、プログラムおよびデバイス製造方法 Expired - Fee Related JP4898419B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006353324A JP4898419B2 (ja) 2006-01-05 2006-12-27 露光量のおよびフォーカス位置のオフセット量を求める方法、プログラムおよびデバイス製造方法
US11/618,137 US7771905B2 (en) 2006-01-05 2006-12-29 Method and program for calculating exposure dose and focus position in exposure apparatus, and device manufacturing method
TW096100220A TWI356283B (en) 2006-01-05 2007-01-03 Method for calculating exposure dose and focus pos
KR1020070000828A KR100847633B1 (ko) 2006-01-05 2007-01-04 노광 장치에 있어서의 노광량 및 포커스 위치를 산출하는방법 및 프로그램, 그리고 디바이스의 제조방법

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006000950 2006-01-05
JP2006000950 2006-01-05
JP2006353324A JP4898419B2 (ja) 2006-01-05 2006-12-27 露光量のおよびフォーカス位置のオフセット量を求める方法、プログラムおよびデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2007208245A JP2007208245A (ja) 2007-08-16
JP2007208245A5 true JP2007208245A5 (enExample) 2010-02-12
JP4898419B2 JP4898419B2 (ja) 2012-03-14

Family

ID=38224852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006353324A Expired - Fee Related JP4898419B2 (ja) 2006-01-05 2006-12-27 露光量のおよびフォーカス位置のオフセット量を求める方法、プログラムおよびデバイス製造方法

Country Status (4)

Country Link
US (1) US7771905B2 (enExample)
JP (1) JP4898419B2 (enExample)
KR (1) KR100847633B1 (enExample)
TW (1) TWI356283B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007184378A (ja) * 2006-01-05 2007-07-19 Canon Inc 露光装置における露光量および／または焦点合わせのための基板の位置を求める方法および装置
JP2007317960A (ja) * 2006-05-26 2007-12-06 Canon Inc 露光条件の検出方法及び装置、並びに、露光装置
JP2008066634A (ja) * 2006-09-11 2008-03-21 Canon Inc 露光装置
DE102008053954B4 (de) * 2008-10-31 2015-07-30 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Fokuskorrektur in Lithographieanlagen mittels Linsenaberrationssteuerung
JP2010114308A (ja) * 2008-11-07 2010-05-20 Toshiba Corp 半導体装置の製造方法
KR20100052908A (ko) * 2008-11-11 2010-05-20 삼성전자주식회사 공정 제어 시스템 및 공정 제어 방법
SG172294A1 (en) 2008-12-30 2011-07-28 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
CN102422227B (zh) * 2009-05-12 2014-09-17 Asml荷兰有限公司 用于光刻技术的检查方法
NL2004545A (en) * 2009-06-09 2010-12-13 Asml Netherlands Bv Lithographic method and arrangement
NL2004716A (en) * 2009-06-17 2010-12-20 Asml Netherlands Bv Lithographic method and arrangement.
JP5712130B2 (ja) * 2009-08-21 2015-05-07 株式会社日立ハイテクノロジーズ パターン形状推定方法、及びパターン測定装置
US8233142B2 (en) * 2009-09-29 2012-07-31 United Microelectronics Corp. Monitoring method of exposure apparatus
TWI451206B (zh) * 2009-10-02 2014-09-01 United Microelectronics Corp 曝光機台的監測方法
CN102043344B (zh) * 2009-10-15 2013-07-17 联华电子股份有限公司 曝光机台的监测方法
JP2011179819A (ja) * 2010-02-26 2011-09-15 Hitachi High-Technologies Corp パターン測定方法及びコンピュータプログラム
JP5286337B2 (ja) * 2010-08-30 2013-09-11 株式会社日立ハイテクノロジーズ 半導体製造装置の管理装置、及びコンピュータプログラム
NL2011816A (en) * 2012-11-30 2014-06-04 Asml Netherlands Bv Method of determining dose and focus, inspection apparatus, patterning device, substrate and device manufacturing method.
WO2016000914A1 (en) 2014-06-30 2016-01-07 Asml Netherlands B.V. Method of determining dose, inspection apparatus, patterning device, substrate and device manufacturing method
US20160162626A1 (en) * 2014-12-01 2016-06-09 Globalfoundries Inc. Lithography process window prediction based on design data
US11764111B2 (en) * 2019-10-24 2023-09-19 Texas Instruments Incorporated Reducing cross-wafer variability for minimum width resistors
TWI846977B (zh) 2019-10-30 2024-07-01 日商Ａｌｉｔｅｃｓ股份有限公司 處理條件推定裝置、處理條件推定方法以及處理條件推定記錄媒體
CN113485073A (zh) * 2021-06-09 2021-10-08 华虹半导体(无锡)有限公司 补偿关键尺寸的方法
CN113411510B (zh) * 2021-06-21 2022-08-12 北京清影机器视觉技术有限公司 一种基于图像质量评价和红热锻件的相机自动曝光算法
US20230008957A1 (en) * 2021-07-09 2023-01-12 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography focus control method

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62132318A (ja) * 1985-12-04 1987-06-15 Canon Inc 露光装置
JP3093528B2 (ja) * 1993-07-15 2000-10-03 キヤノン株式会社 走査型露光装置
JPH1032160A (ja) * 1996-07-17 1998-02-03 Toshiba Corp パターン露光方法及び露光装置
JPH1064801A (ja) * 1996-08-13 1998-03-06 Sony Corp 露光装置及び露光方法
US6013401A (en) * 1997-03-31 2000-01-11 Svg Lithography Systems, Inc. Method of controlling illumination field to reduce line width variation
JP2002190443A (ja) * 2000-12-20 2002-07-05 Hitachi Ltd 露光方法およびその露光システム
JP3906035B2 (ja) * 2001-03-29 2007-04-18 株式会社東芝 半導体製造装置の制御方法
JP3997066B2 (ja) 2001-08-20 2007-10-24 株式会社日立製作所 電子線を用いたプロセス変動監視システムおよび方法
JP3839306B2 (ja) * 2001-11-08 2006-11-01 株式会社ルネサステクノロジ 半導体装置の製造方法および製造システム
JP2003168641A (ja) * 2001-12-03 2003-06-13 Mitsubishi Electric Corp 露光条件を管理することが可能な半導体装置の製造方法およびそれを用いて製造された半導体装置
EP1319982A1 (en) 2001-12-12 2003-06-18 ASML Netherlands B.V. Lithographic apparatus , device manufacturing method, and computer program
JP3971937B2 (ja) * 2002-02-18 2007-09-05 株式会社日立ハイテクノロジーズ 露光条件監視方法およびその装置並びに半導体デバイスの製造方法
JP2004079681A (ja) * 2002-08-13 2004-03-11 Dainippon Screen Mfg Co Ltd 基板の露光方法および基板処理装置
JP4065817B2 (ja) * 2003-08-12 2008-03-26 株式会社日立ハイテクノロジーズ 露光プロセスモニタ方法
JP3848332B2 (ja) * 2003-08-29 2006-11-22 キヤノン株式会社 露光方法及びデバイス製造方法
US6873938B1 (en) * 2003-09-17 2005-03-29 Asml Netherlands B.V. Adaptive lithographic critical dimension enhancement
JP2007184378A (ja) * 2006-01-05 2007-07-19 Canon Inc 露光装置における露光量および／または焦点合わせのための基板の位置を求める方法および装置

Similar Documents

Publication Publication Date Title
JP2007208245A5 (enExample)
US10866505B2 (en) Mask process correction
JP2015502668A5 (enExample)
JP5076025B2 (ja) 自動作成マスク及び多重マスク層を利用した単一集積回路層のパターン形成
JP2005181523A5 (enExample)
EP1814143A4 (en) EXPOSURE CONDITIONING SETUP METHOD, SUBSTRATE PROCESSING DEVICE AND COMPUTER PROGRAM
TW200801791A (en) Pattern forming method and phase shift mask manufacturing method
TW200739276A (en) Method and program for calculating exposure dose and focus position in exposure apparatus, and device manufacturing method
US8148051B2 (en) Method and system for manufacturing openings on semiconductor devices
US10656517B2 (en) Pattern correction in multiple patterning steps
CN104025255B (zh) 用于工艺优化的相位调谐的技术
JP2011059662A5 (ja) 生成方法、作成方法、露光方法、デバイスの製造方法及びプログラム
US8423920B2 (en) Method of forming photomask by collecting verification data based on a layout of contour patterns
JP2015012258A5 (enExample)
JP2012098397A5 (enExample)
US8352891B2 (en) Layout decomposition based on partial intensity distribution
KR101015613B1 (ko) 투명기판상 금속박막 패턴 형성방법
US9753364B2 (en) Producing resist layers using fine segmentation
JP4413825B2 (ja) 潜像計算方法、マスクパターン作成方法および半導体装置の製造方法
JP2009117491A5 (enExample)
CN102087469B (zh) 光学临近效应修正的建模方法及测试图形的形成方法
US9223911B2 (en) Optical model employing phase transmission values for sub-resolution assist features
US9104833B2 (en) Mask set for double exposure process and method of using the mask set
US20130280645A1 (en) Mask Set for Double Exposure Process and Method of Using the Mask Set
Palatnick et al. Investigating pathways for deep-uv photolithography of large-area nanopost-based metasurfaces with high feature-size contrast