JP2007194621A5 - - Google Patents
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- Publication number
- JP2007194621A5 JP2007194621A5 JP2006348855A JP2006348855A JP2007194621A5 JP 2007194621 A5 JP2007194621 A5 JP 2007194621A5 JP 2006348855 A JP2006348855 A JP 2006348855A JP 2006348855 A JP2006348855 A JP 2006348855A JP 2007194621 A5 JP2007194621 A5 JP 2007194621A5
- Authority
- JP
- Japan
- Prior art keywords
- pel
- ild
- layer
- oxide
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 14
- 239000010410 layer Substances 0.000 claims 11
- 239000004065 semiconductor Substances 0.000 claims 6
- 238000000151 deposition Methods 0.000 claims 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 4
- 229910052802 copper Inorganic materials 0.000 claims 4
- 239000010949 copper Substances 0.000 claims 4
- 238000007747 plating Methods 0.000 claims 4
- 229910052793 cadmium Inorganic materials 0.000 claims 2
- 229910003437 indium oxide Inorganic materials 0.000 claims 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 2
- 239000011229 interlayer Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 229940071182 stannate Drugs 0.000 claims 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 2
- 229910001887 tin oxide Inorganic materials 0.000 claims 2
- 239000011787 zinc oxide Substances 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
- 230000001737 promoting effect Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/306,930 US7341948B2 (en) | 2006-01-17 | 2006-01-17 | Method of making a semiconductor structure with a plating enhancement layer |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007194621A JP2007194621A (ja) | 2007-08-02 |
| JP2007194621A5 true JP2007194621A5 (https=) | 2008-12-18 |
| JP4317564B2 JP4317564B2 (ja) | 2009-08-19 |
Family
ID=38263770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006348855A Expired - Fee Related JP4317564B2 (ja) | 2006-01-17 | 2006-12-26 | メッキ促進層を有する半導体構造物を作る方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7341948B2 (https=) |
| JP (1) | JP4317564B2 (https=) |
| CN (1) | CN100479130C (https=) |
| TW (1) | TW200739737A (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080113518A (ko) * | 2007-06-25 | 2008-12-31 | 주식회사 동부하이텍 | 반도체 소자의 제조 방법 |
| US8828878B2 (en) * | 2011-06-01 | 2014-09-09 | United Microelectronics Corp. | Manufacturing method for dual damascene structure |
| US9312140B2 (en) | 2014-05-19 | 2016-04-12 | International Business Machines Corporation | Semiconductor structures having low resistance paths throughout a wafer |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4675468A (en) | 1985-12-20 | 1987-06-23 | The Standard Oil Company | Stable contact between current collector grid and transparent conductive layer |
| US4977013A (en) * | 1988-06-03 | 1990-12-11 | Andus Corporation | Tranparent conductive coatings |
| US5280381A (en) | 1992-07-27 | 1994-01-18 | Ford Motor Company | Process for preparing a solid polymeric fast ion conducting layer for an electrochromic device |
| US5969422A (en) * | 1997-05-15 | 1999-10-19 | Advanced Micro Devices, Inc. | Plated copper interconnect structure |
| JP3085247B2 (ja) * | 1997-07-07 | 2000-09-04 | 日本電気株式会社 | 金属薄膜の形成方法 |
| US6077780A (en) * | 1997-12-03 | 2000-06-20 | Advanced Micro Devices, Inc. | Method for filling high aspect ratio openings of an integrated circuit to minimize electromigration failure |
| US6197688B1 (en) * | 1998-02-12 | 2001-03-06 | Motorola Inc. | Interconnect structure in a semiconductor device and method of formation |
| US6162365A (en) | 1998-03-04 | 2000-12-19 | International Business Machines Corporation | Pd etch mask for copper circuitization |
| US6197181B1 (en) | 1998-03-20 | 2001-03-06 | Semitool, Inc. | Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece |
| KR100336621B1 (ko) | 2000-02-15 | 2002-05-16 | 박호군 | 고분자 기판 위의 인듐산화물 또는 인듐주석산화물 박막증착 방법 |
| GB0029315D0 (en) | 2000-12-01 | 2001-01-17 | Koninkl Philips Electronics Nv | Method of increasing the conductivity of a transparent conductive layer |
-
2006
- 2006-01-17 US US11/306,930 patent/US7341948B2/en not_active Expired - Lifetime
- 2006-12-26 JP JP2006348855A patent/JP4317564B2/ja not_active Expired - Fee Related
-
2007
- 2007-01-03 TW TW096100167A patent/TW200739737A/zh unknown
- 2007-01-15 CN CNB2007100023836A patent/CN100479130C/zh active Active
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