CN100479130C - 制造半导体结构的方法 - Google Patents

制造半导体结构的方法 Download PDF

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Publication number
CN100479130C
CN100479130C CNB2007100023836A CN200710002383A CN100479130C CN 100479130 C CN100479130 C CN 100479130C CN B2007100023836 A CNB2007100023836 A CN B2007100023836A CN 200710002383 A CN200710002383 A CN 200710002383A CN 100479130 C CN100479130 C CN 100479130C
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CN
China
Prior art keywords
layer
enhancement layer
plating
interlayer dielectric
plating enhancement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CNB2007100023836A
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English (en)
Chinese (zh)
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CN101005043A (zh
Inventor
肖姆·波诺斯
约翰·安东尼·菲茨西蒙斯
史蒂文·夏伊格-聪
特里·A.·斯普纳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Core Usa Second LLC
GlobalFoundries Inc
Original Assignee
International Business Machines Corp
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Publication date
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Publication of CN101005043A publication Critical patent/CN101005043A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/058—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by depositing on sacrificial masks, e.g. using lift-off
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/0425—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers comprising multiple stacked seed or nucleation layers

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemically Coating (AREA)
  • Electroplating Methods And Accessories (AREA)
CNB2007100023836A 2006-01-17 2007-01-15 制造半导体结构的方法 Active CN100479130C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/306,930 2006-01-17
US11/306,930 US7341948B2 (en) 2006-01-17 2006-01-17 Method of making a semiconductor structure with a plating enhancement layer

Publications (2)

Publication Number Publication Date
CN101005043A CN101005043A (zh) 2007-07-25
CN100479130C true CN100479130C (zh) 2009-04-15

Family

ID=38263770

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2007100023836A Active CN100479130C (zh) 2006-01-17 2007-01-15 制造半导体结构的方法

Country Status (4)

Country Link
US (1) US7341948B2 (https=)
JP (1) JP4317564B2 (https=)
CN (1) CN100479130C (https=)
TW (1) TW200739737A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080113518A (ko) * 2007-06-25 2008-12-31 주식회사 동부하이텍 반도체 소자의 제조 방법
US8828878B2 (en) * 2011-06-01 2014-09-09 United Microelectronics Corp. Manufacturing method for dual damascene structure
US9312140B2 (en) 2014-05-19 2016-04-12 International Business Machines Corporation Semiconductor structures having low resistance paths throughout a wafer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4977013A (en) * 1988-06-03 1990-12-11 Andus Corporation Tranparent conductive coatings
CN1226080A (zh) * 1998-02-12 1999-08-18 摩托罗拉公司 半导体器件中的互连结构及其制作方法
US5969422A (en) * 1997-05-15 1999-10-19 Advanced Micro Devices, Inc. Plated copper interconnect structure
US6174563B1 (en) * 1997-07-07 2001-01-16 Nec Corporation Method for forming thin metal films

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4675468A (en) 1985-12-20 1987-06-23 The Standard Oil Company Stable contact between current collector grid and transparent conductive layer
US5280381A (en) 1992-07-27 1994-01-18 Ford Motor Company Process for preparing a solid polymeric fast ion conducting layer for an electrochromic device
US6077780A (en) * 1997-12-03 2000-06-20 Advanced Micro Devices, Inc. Method for filling high aspect ratio openings of an integrated circuit to minimize electromigration failure
US6162365A (en) 1998-03-04 2000-12-19 International Business Machines Corporation Pd etch mask for copper circuitization
US6197181B1 (en) 1998-03-20 2001-03-06 Semitool, Inc. Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece
KR100336621B1 (ko) 2000-02-15 2002-05-16 박호군 고분자 기판 위의 인듐산화물 또는 인듐주석산화물 박막증착 방법
GB0029315D0 (en) 2000-12-01 2001-01-17 Koninkl Philips Electronics Nv Method of increasing the conductivity of a transparent conductive layer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4977013A (en) * 1988-06-03 1990-12-11 Andus Corporation Tranparent conductive coatings
US5969422A (en) * 1997-05-15 1999-10-19 Advanced Micro Devices, Inc. Plated copper interconnect structure
US6174563B1 (en) * 1997-07-07 2001-01-16 Nec Corporation Method for forming thin metal films
CN1226080A (zh) * 1998-02-12 1999-08-18 摩托罗拉公司 半导体器件中的互连结构及其制作方法

Also Published As

Publication number Publication date
US20070166996A1 (en) 2007-07-19
CN101005043A (zh) 2007-07-25
US7341948B2 (en) 2008-03-11
TW200739737A (en) 2007-10-16
JP4317564B2 (ja) 2009-08-19
JP2007194621A (ja) 2007-08-02

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TR01 Transfer of patent right

Effective date of registration: 20171204

Address after: Grand Cayman, Cayman Islands

Patentee after: GLOBALFOUNDRIES INC.

Address before: American New York

Patentee before: Core USA second LLC

Effective date of registration: 20171204

Address after: American New York

Patentee after: Core USA second LLC

Address before: American New York

Patentee before: International Business Machines Corp.