JP2007184608A5 - - Google Patents

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Publication number
JP2007184608A5
JP2007184608A5 JP2006354892A JP2006354892A JP2007184608A5 JP 2007184608 A5 JP2007184608 A5 JP 2007184608A5 JP 2006354892 A JP2006354892 A JP 2006354892A JP 2006354892 A JP2006354892 A JP 2006354892A JP 2007184608 A5 JP2007184608 A5 JP 2007184608A5
Authority
JP
Japan
Prior art keywords
fullerene
lower electrode
layer
phase change
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006354892A
Other languages
English (en)
Japanese (ja)
Other versions
JP5160086B2 (ja
JP2007184608A (ja
Filing date
Publication date
Priority claimed from KR1020060000472A external-priority patent/KR100695166B1/ko
Application filed filed Critical
Publication of JP2007184608A publication Critical patent/JP2007184608A/ja
Publication of JP2007184608A5 publication Critical patent/JP2007184608A5/ja
Application granted granted Critical
Publication of JP5160086B2 publication Critical patent/JP5160086B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2006354892A 2006-01-03 2006-12-28 フラーレン層を具備した相変化メモリ素子の製造方法 Expired - Fee Related JP5160086B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2006-0000472 2006-01-03
KR1020060000472A KR100695166B1 (ko) 2006-01-03 2006-01-03 플러렌층을 구비한 상변화 메모리 소자의 제조 방법

Publications (3)

Publication Number Publication Date
JP2007184608A JP2007184608A (ja) 2007-07-19
JP2007184608A5 true JP2007184608A5 (enExample) 2010-02-12
JP5160086B2 JP5160086B2 (ja) 2013-03-13

Family

ID=38103647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006354892A Expired - Fee Related JP5160086B2 (ja) 2006-01-03 2006-12-28 フラーレン層を具備した相変化メモリ素子の製造方法

Country Status (4)

Country Link
US (1) US7572662B2 (enExample)
JP (1) JP5160086B2 (enExample)
KR (1) KR100695166B1 (enExample)
CN (1) CN1996572B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7940552B2 (en) * 2007-04-30 2011-05-10 Samsung Electronics Co., Ltd. Multiple level cell phase-change memory device having pre-reading operation resistance drift recovery, memory systems employing such devices and methods of reading memory devices
KR100914267B1 (ko) * 2007-06-20 2009-08-27 삼성전자주식회사 가변저항 메모리 장치 및 그것의 형성방법
KR101308549B1 (ko) * 2007-07-12 2013-09-13 삼성전자주식회사 멀티-레벨 상변환 메모리 장치 및 그것의 쓰기 방법
KR100889779B1 (ko) * 2007-09-19 2009-03-20 한양대학교 산학협력단 메모리 소자 및 그 제조 방법
US20120012919A1 (en) 2009-03-27 2012-01-19 Cornell University Nonvolatile flash memory structures including fullerene molecules and methods for manufacturing the same
JP4598152B1 (ja) * 2010-01-29 2010-12-15 横尾 保 有害物質洗浄装置及び有害物質洗浄方法
CN101826596B (zh) * 2010-03-31 2012-08-08 中国科学院半导体研究所 一种相变存储器的制作方法
US9583702B2 (en) 2015-03-20 2017-02-28 Samsung Electronics Co., Ltd. Graphene-inserted phase change memory device and method of fabricating the same
CN111430540B (zh) * 2020-03-23 2022-04-22 南京大学 一种有机无机异质结的制备方法及其应用

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US6472705B1 (en) * 1998-11-18 2002-10-29 International Business Machines Corporation Molecular memory & logic
KR100476893B1 (ko) * 2002-05-10 2005-03-17 삼성전자주식회사 상변환 기억 셀들 및 그 제조방법들
US6784017B2 (en) * 2002-08-12 2004-08-31 Precision Dynamics Corporation Method of creating a high performance organic semiconductor device
US6911373B2 (en) * 2002-09-20 2005-06-28 Intel Corporation Ultra-high capacitance device based on nanostructures
US6867425B2 (en) * 2002-12-13 2005-03-15 Intel Corporation Lateral phase change memory and method therefor
JP2004241228A (ja) * 2003-02-05 2004-08-26 Toin Gakuen プラスチックフィルム電極及びそれを用いた光電池
KR100486303B1 (ko) * 2003-02-05 2005-04-29 삼성전자주식회사 집적 회로용 평판형 캐패시터 및 그의 제조방법
KR100982419B1 (ko) * 2003-05-01 2010-09-15 삼성전자주식회사 탄소나노튜브를 이용한 반도체 소자의 배선 형성 방법 및이 방법에 의해 제조된 반도체 소자
KR100979710B1 (ko) * 2003-05-23 2010-09-02 삼성전자주식회사 반도체 메모리 소자 및 제조방법
WO2005060005A1 (ja) * 2003-12-18 2005-06-30 Fuji Electric Holdings Co., Ltd. スイッチング素子
KR100533958B1 (ko) * 2004-01-05 2005-12-06 삼성전자주식회사 상변화 메모리 장치 및 그 제조 방법
JP4904541B2 (ja) * 2004-03-24 2012-03-28 独立行政法人科学技術振興機構 有機薄膜を有する基板及びそれを用いたトランジスタ並びにそれらの製造方法
KR20050107238A (ko) * 2004-05-08 2005-11-11 서동학 유기물 및 고분자 소재를 이용한 비휘발성 메모리 소자
KR100689813B1 (ko) * 2004-09-08 2007-03-08 삼성전자주식회사 탄소나노튜브를 가진 반도체 메모리 장치 및 이의 제조 방법
US7660180B2 (en) * 2004-11-30 2010-02-09 Nxp B.V. Dielectric antifuse for electro-thermally programmable device
US7262991B2 (en) * 2005-06-30 2007-08-28 Intel Corporation Nanotube- and nanocrystal-based non-volatile memory
US7352607B2 (en) * 2005-07-26 2008-04-01 International Business Machines Corporation Non-volatile switching and memory devices using vertical nanotubes
KR100695162B1 (ko) * 2005-09-13 2007-03-14 삼성전자주식회사 상변화 메모리 및 그 동작 방법
US20070111429A1 (en) * 2005-11-14 2007-05-17 Macronix International Co., Ltd. Method of manufacturing a pipe shaped phase change memory

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