JP2007173820A - 半導体デバイス - Google Patents
半導体デバイス Download PDFInfo
- Publication number
- JP2007173820A JP2007173820A JP2006340835A JP2006340835A JP2007173820A JP 2007173820 A JP2007173820 A JP 2007173820A JP 2006340835 A JP2006340835 A JP 2006340835A JP 2006340835 A JP2006340835 A JP 2006340835A JP 2007173820 A JP2007173820 A JP 2007173820A
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- Prior art keywords
- metal oxide
- layer
- channel
- oxide layer
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 73
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 82
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 82
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 15
- 230000014759 maintenance of location Effects 0.000 claims description 12
- 238000002955 isolation Methods 0.000 claims description 11
- 239000011787 zinc oxide Substances 0.000 claims description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 1
- 239000000395 magnesium oxide Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 143
- 239000000758 substrate Substances 0.000 description 14
- 230000007704 transition Effects 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000007613 environmental effect Effects 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- HVYWMOMLDIMFJA-DPAQBDIFSA-N cholesterol Chemical compound C1C=C2C[C@@H](O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2 HVYWMOMLDIMFJA-DPAQBDIFSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 102000004190 Enzymes Human genes 0.000 description 1
- 108090000790 Enzymes Proteins 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 125000005376 alkyl siloxane group Chemical group 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- 235000012000 cholesterol Nutrition 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000013545 self-assembled monolayer Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
【解決手段】半導体デバイス100は、金属酸化物層101、金属酸化物層におけるチャネル領域105、金属酸化物層におけるチャネル領域に形成された保持層104、および金属酸化物層におけるチャネル領域に接続された二つ以上のチャネル接点102、103を含む。
【選択図】図1
Description
Claims (4)
- 表面領域とバルク領域とを備えた金属酸化物層と、
前記金属酸化物層の前記バルク領域の固有抵抗より小さい固有抵抗を有する前記金属酸化物層の前記表面領域のチャネル領域と、
前記チャネル領域に形成された保持層と、
前記金属酸化物層における前記チャネル領域に接続された少なくとも二つのチャネル接点と、
を含むことを特徴とする半導体デバイス。 - 請求項1記載の半導体デバイスにおいて、
前記金属酸化物層は、さらに酸化亜鉛層とマグネシウム/亜鉛酸化物層からなるグループから選択される一つの層を含むことを特徴とする半導体デバイス。 - 請求項1記載の半導体デバイスにおいて、さらに
前記保持層および前記少なくとも二つのチャネル接点を囲む、前記金属酸化物層内の分離領域と、
前記半導体デバイスを囲んだ前記表面上の絶縁保持層と、
金属酸化物のメサをさらに含む前記金属酸化物層と、
からなるグループから選択される一つを含むことを特徴とする半導体デバイス。 - 請求項1記載の半導体デバイスにおいて、さらに
前記保持層を通る前記チャネル接点間のあらゆる経路上の前記保持層上に形成されたゲートを含むことを特徴とする半導体デバイス。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/313,341 US7314801B2 (en) | 2005-12-20 | 2005-12-20 | Semiconductor device having a surface conducting channel and method of forming |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013252609A Division JP2014075601A (ja) | 2005-12-20 | 2013-12-06 | 半導体デバイスの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2007173820A true JP2007173820A (ja) | 2007-07-05 |
Family
ID=37776421
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006340835A Pending JP2007173820A (ja) | 2005-12-20 | 2006-12-19 | 半導体デバイス |
JP2013252609A Ceased JP2014075601A (ja) | 2005-12-20 | 2013-12-06 | 半導体デバイスの製造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013252609A Ceased JP2014075601A (ja) | 2005-12-20 | 2013-12-06 | 半導体デバイスの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7314801B2 (ja) |
EP (1) | EP1801887A1 (ja) |
JP (2) | JP2007173820A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014209648A (ja) * | 2010-01-22 | 2014-11-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2015079993A (ja) * | 2010-06-11 | 2015-04-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2015092615A (ja) * | 2009-09-24 | 2015-05-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2015097294A (ja) * | 2009-10-16 | 2015-05-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2019012858A (ja) * | 2009-12-04 | 2019-01-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2020074410A (ja) * | 2009-10-21 | 2020-05-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5116225B2 (ja) * | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
CN116722019A (zh) * | 2009-10-16 | 2023-09-08 | 株式会社半导体能源研究所 | 显示设备 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005074038A1 (en) * | 2004-01-23 | 2005-08-11 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0727899B2 (ja) * | 1986-10-20 | 1995-03-29 | 日本電気株式会社 | 窒化シリコン膜の成膜方法 |
GB2361480B (en) * | 2000-04-19 | 2002-06-19 | Murata Manufacturing Co | Method for forming p-type semiconductor film and light emitting device using the same |
JP4090716B2 (ja) * | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP2004006686A (ja) * | 2002-03-26 | 2004-01-08 | Sanyo Electric Co Ltd | ZnO半導体層の形成方法、半導体素子の製造方法及び半導体素子 |
US7049190B2 (en) * | 2002-03-15 | 2006-05-23 | Sanyo Electric Co., Ltd. | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
US7339187B2 (en) * | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7026713B2 (en) | 2003-12-17 | 2006-04-11 | Hewlett-Packard Development Company, L.P. | Transistor device having a delafossite material |
CN1998087B (zh) * | 2004-03-12 | 2014-12-31 | 独立行政法人科学技术振兴机构 | 非晶形氧化物和薄膜晶体管 |
JP4461873B2 (ja) * | 2004-03-29 | 2010-05-12 | カシオ計算機株式会社 | 亜鉛酸化物の加工方法および薄膜トランジスタの製造方法 |
JP2006005116A (ja) * | 2004-06-17 | 2006-01-05 | Casio Comput Co Ltd | 膜形成方法、半導体膜、及び積層絶縁膜 |
-
2005
- 2005-12-20 US US11/313,341 patent/US7314801B2/en not_active Expired - Fee Related
-
2006
- 2006-12-18 EP EP06126360A patent/EP1801887A1/en not_active Withdrawn
- 2006-12-19 JP JP2006340835A patent/JP2007173820A/ja active Pending
-
2013
- 2013-12-06 JP JP2013252609A patent/JP2014075601A/ja not_active Ceased
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005074038A1 (en) * | 2004-01-23 | 2005-08-11 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
Non-Patent Citations (1)
Title |
---|
JPN6013000936; O.Schmidt et al.: 'Effect of an electrically conducting layer at the zinc oxide surcafe' Japanese Journal of Applied Physics vol.44, no.10, 20051011, pp.7271-7274 * |
Cited By (16)
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---|---|---|---|---|
JP2015092615A (ja) * | 2009-09-24 | 2015-05-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2016213513A (ja) * | 2009-09-24 | 2016-12-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9647131B2 (en) | 2009-09-24 | 2017-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, power circuit, and manufacturing method of semiconductor device |
KR101811197B1 (ko) * | 2009-09-24 | 2017-12-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 전력용 회로, 및, 반도체 장치의 제작 방법 |
US9959822B2 (en) | 2009-10-16 | 2018-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device including the liquid crystal display device |
JP2015097294A (ja) * | 2009-10-16 | 2015-05-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9368082B2 (en) | 2009-10-16 | 2016-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device including the liquid crystal display device |
US10565946B2 (en) | 2009-10-16 | 2020-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device including the liquid crystal display device |
US11107396B2 (en) | 2009-10-21 | 2021-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device including thin film transistor including top-gate |
JP2020074410A (ja) * | 2009-10-21 | 2020-05-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2019012858A (ja) * | 2009-12-04 | 2019-01-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2019004190A (ja) * | 2010-01-22 | 2019-01-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2014209648A (ja) * | 2010-01-22 | 2014-11-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9865744B2 (en) | 2010-01-22 | 2018-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9136391B2 (en) | 2010-01-22 | 2015-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2015079993A (ja) * | 2010-06-11 | 2015-04-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US7314801B2 (en) | 2008-01-01 |
US20070141789A1 (en) | 2007-06-21 |
JP2014075601A (ja) | 2014-04-24 |
EP1801887A1 (en) | 2007-06-27 |
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