JP2007165860A - 表示装置及びその作製方法 - Google Patents
表示装置及びその作製方法 Download PDFInfo
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- JP2007165860A JP2007165860A JP2006298961A JP2006298961A JP2007165860A JP 2007165860 A JP2007165860 A JP 2007165860A JP 2006298961 A JP2006298961 A JP 2006298961A JP 2006298961 A JP2006298961 A JP 2006298961A JP 2007165860 A JP2007165860 A JP 2007165860A
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- conductive film
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- 238000004519 manufacturing process Methods 0.000 title claims description 49
- 239000000463 material Substances 0.000 claims abstract description 126
- 239000004065 semiconductor Substances 0.000 claims description 171
- 238000000034 method Methods 0.000 claims description 114
- 239000012535 impurity Substances 0.000 claims description 47
- 230000001681 protective effect Effects 0.000 claims description 43
- 238000005530 etching Methods 0.000 claims description 23
- 239000010949 copper Substances 0.000 claims description 17
- 239000003990 capacitor Substances 0.000 claims description 12
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
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- 230000002829 reductive effect Effects 0.000 abstract description 32
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 557
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- 239000000758 substrate Substances 0.000 description 90
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 27
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- 229910052581 Si3N4 Inorganic materials 0.000 description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 22
- 230000004888 barrier function Effects 0.000 description 21
- 229910003437 indium oxide Inorganic materials 0.000 description 20
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- 238000005401 electroluminescence Methods 0.000 description 18
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 14
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 14
- 229910001887 tin oxide Inorganic materials 0.000 description 14
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 13
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
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- 229910003902 SiCl 4 Inorganic materials 0.000 description 3
- 229910008482 TiSiN Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- ZCLBLRDCYNGAGV-UHFFFAOYSA-N [Si]=O.[Sn].[In] Chemical compound [Si]=O.[Sn].[In] ZCLBLRDCYNGAGV-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
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- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 3
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 2
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- 230000000903 blocking effect Effects 0.000 description 2
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- 229920000178 Acrylic resin Polymers 0.000 description 1
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- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006298961A JP2007165860A (ja) | 2005-11-17 | 2006-11-02 | 表示装置及びその作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005333207 | 2005-11-17 | ||
| JP2006298961A JP2007165860A (ja) | 2005-11-17 | 2006-11-02 | 表示装置及びその作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007165860A true JP2007165860A (ja) | 2007-06-28 |
| JP2007165860A5 JP2007165860A5 (enExample) | 2009-10-08 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006298961A Withdrawn JP2007165860A (ja) | 2005-11-17 | 2006-11-02 | 表示装置及びその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007165860A (enExample) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009124122A (ja) * | 2007-10-23 | 2009-06-04 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2009251101A (ja) * | 2008-04-02 | 2009-10-29 | Dainippon Printing Co Ltd | 表示装置用電極フィルムおよび表示装置用電極フィルムの製造方法 |
| JP2009283936A (ja) * | 2008-05-20 | 2009-12-03 | Palo Alto Research Center Inc | 層状の電子デバイスをフレキシブル基板上に製造する方法及び薄膜電子構造 |
| JP2011100988A (ja) * | 2009-10-09 | 2011-05-19 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
| JP2011100994A (ja) * | 2009-10-09 | 2011-05-19 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
| JP2011135061A (ja) * | 2009-11-27 | 2011-07-07 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
| JP2016095990A (ja) * | 2014-11-13 | 2016-05-26 | パイオニア株式会社 | 発光装置 |
| JP2016095991A (ja) * | 2014-11-13 | 2016-05-26 | パイオニア株式会社 | 発光装置 |
| JP2016531396A (ja) * | 2013-08-19 | 2016-10-06 | エルジー・ケム・リミテッド | 有機物マスクを含む積層体およびそれを用いた有機発光素子の製造方法 |
| JP2018137084A (ja) * | 2017-02-21 | 2018-08-30 | 株式会社東海理化電機製作所 | 有機ｅｌ表示装置及びその製造方法 |
| JP2020529047A (ja) * | 2017-08-21 | 2020-10-01 | 深▲せん▼市華星光電半導体顕示技術有限公司Ｓｈｅｎｚｈｅｎ Ｃｈｉｎａ Ｓｔａｒ Ｏｐｔｏｅｌｅｃｔｒｏｎｉｃｓ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｄｉｓｐｌａｙ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．，Ｌｔｄ． | フレキシブルディスプレイパネルの製造方法及びフレキシブルディスプレイパネル |
| JP2022105511A (ja) * | 2008-12-25 | 2022-07-14 | 株式会社半導体エネルギー研究所 | 液晶表示装置、電子機器 |
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|---|---|---|---|---|
| JPS6373645A (ja) * | 1986-09-17 | 1988-04-04 | Fujitsu Ltd | 半導体装置 |
| JPH0427125A (ja) * | 1990-05-22 | 1992-01-30 | Hitachi Ltd | 配線部材の製造方法 |
| JPH0566421A (ja) * | 1991-09-09 | 1993-03-19 | Sanyo Electric Co Ltd | 多層配線の形成方法 |
| JPH0682820A (ja) * | 1992-09-01 | 1994-03-25 | Fujitsu Ltd | 薄膜トランジスタマトリックスの製造方法 |
| JPH08146463A (ja) * | 1994-11-25 | 1996-06-07 | Sharp Corp | スイッチング素子アレイおよびそれを用いた表示装置 |
| JPH08297291A (ja) * | 1995-04-25 | 1996-11-12 | Hitachi Ltd | フリップチップ方式の液晶表示素子 |
| JP2003282788A (ja) * | 2002-03-25 | 2003-10-03 | Ricoh Co Ltd | Ｃｓｐにおける抵抗素子およびｃｓｐを備えた半導体装置 |
| JP2004103605A (ja) * | 2002-09-04 | 2004-04-02 | Murata Mfg Co Ltd | 微細配線形成方法 |
-
2006
- 2006-11-02 JP JP2006298961A patent/JP2007165860A/ja not_active Withdrawn
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6373645A (ja) * | 1986-09-17 | 1988-04-04 | Fujitsu Ltd | 半導体装置 |
| JPH0427125A (ja) * | 1990-05-22 | 1992-01-30 | Hitachi Ltd | 配線部材の製造方法 |
| JPH0566421A (ja) * | 1991-09-09 | 1993-03-19 | Sanyo Electric Co Ltd | 多層配線の形成方法 |
| JPH0682820A (ja) * | 1992-09-01 | 1994-03-25 | Fujitsu Ltd | 薄膜トランジスタマトリックスの製造方法 |
| JPH08146463A (ja) * | 1994-11-25 | 1996-06-07 | Sharp Corp | スイッチング素子アレイおよびそれを用いた表示装置 |
| JPH08297291A (ja) * | 1995-04-25 | 1996-11-12 | Hitachi Ltd | フリップチップ方式の液晶表示素子 |
| JP2003282788A (ja) * | 2002-03-25 | 2003-10-03 | Ricoh Co Ltd | Ｃｓｐにおける抵抗素子およびｃｓｐを備えた半導体装置 |
| JP2004103605A (ja) * | 2002-09-04 | 2004-04-02 | Murata Mfg Co Ltd | 微細配線形成方法 |
Cited By (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009124122A (ja) * | 2007-10-23 | 2009-06-04 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2009251101A (ja) * | 2008-04-02 | 2009-10-29 | Dainippon Printing Co Ltd | 表示装置用電極フィルムおよび表示装置用電極フィルムの製造方法 |
| KR101611811B1 (ko) | 2008-05-20 | 2016-04-12 | 팔로 알토 리서치 센터 인코포레이티드 | 연성 기판들 상에 전자 디바이스들을 제조하기 위한 버퍼 층의 어닐링 |
| JP2009283936A (ja) * | 2008-05-20 | 2009-12-03 | Palo Alto Research Center Inc | 層状の電子デバイスをフレキシブル基板上に製造する方法及び薄膜電子構造 |
| US11996416B2 (en) | 2008-12-25 | 2024-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2022105511A (ja) * | 2008-12-25 | 2022-07-14 | 株式会社半導体エネルギー研究所 | 液晶表示装置、電子機器 |
| JP2018101792A (ja) * | 2009-10-09 | 2018-06-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2020167416A (ja) * | 2009-10-09 | 2020-10-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2015228505A (ja) * | 2009-10-09 | 2015-12-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2011100988A (ja) * | 2009-10-09 | 2011-05-19 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
| US11695080B2 (en) | 2009-10-09 | 2023-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
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