JP2007134705A5 - - Google Patents

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Publication number
JP2007134705A5
JP2007134705A5 JP2006299177A JP2006299177A JP2007134705A5 JP 2007134705 A5 JP2007134705 A5 JP 2007134705A5 JP 2006299177 A JP2006299177 A JP 2006299177A JP 2006299177 A JP2006299177 A JP 2006299177A JP 2007134705 A5 JP2007134705 A5 JP 2007134705A5
Authority
JP
Japan
Prior art keywords
contact hole
region
forming
silicidation
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006299177A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007134705A (ja
Filing date
Publication date
Priority claimed from KR1020050106099A external-priority patent/KR100735522B1/ko
Application filed filed Critical
Publication of JP2007134705A publication Critical patent/JP2007134705A/ja
Publication of JP2007134705A5 publication Critical patent/JP2007134705A5/ja
Pending legal-status Critical Current

Links

JP2006299177A 2005-11-07 2006-11-02 半導体素子及びその製造方法 Pending JP2007134705A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050106099A KR100735522B1 (ko) 2005-11-07 2005-11-07 반도체 소자의 제조 방법 및 그에 의해 제조된 반도체 소자
US11/355,112 US7662716B2 (en) 2005-11-07 2006-02-14 Method for forming silicide contacts

Publications (2)

Publication Number Publication Date
JP2007134705A JP2007134705A (ja) 2007-05-31
JP2007134705A5 true JP2007134705A5 (enrdf_load_stackoverflow) 2009-12-17

Family

ID=38156058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006299177A Pending JP2007134705A (ja) 2005-11-07 2006-11-02 半導体素子及びその製造方法

Country Status (1)

Country Link
JP (1) JP2007134705A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8803245B2 (en) 2008-06-30 2014-08-12 Mcafee, Inc. Method of forming stacked trench contacts and structures formed thereby
JP2024062790A (ja) * 2022-10-25 2024-05-10 東京エレクトロン株式会社 基板処理方法及び基板処理システム

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1167688A (ja) * 1997-08-22 1999-03-09 Nec Corp シリサイド材料とその薄膜およびシリサイド薄膜の製造方法
JP2002261161A (ja) * 2001-03-05 2002-09-13 Hitachi Ltd 半導体装置の製造方法
KR100493411B1 (ko) * 2001-06-12 2005-06-07 주식회사 하이닉스반도체 반도체 소자의 셀 플러그 형성방법
JP2003142608A (ja) * 2001-11-08 2003-05-16 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法

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