JP2007129231A - 空乏ストップ層を有するトレンチ絶縁ゲートバイポーラトランジスタ(igbt) - Google Patents
空乏ストップ層を有するトレンチ絶縁ゲートバイポーラトランジスタ(igbt) Download PDFInfo
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- JP2007129231A JP2007129231A JP2006298340A JP2006298340A JP2007129231A JP 2007129231 A JP2007129231 A JP 2007129231A JP 2006298340 A JP2006298340 A JP 2006298340A JP 2006298340 A JP2006298340 A JP 2006298340A JP 2007129231 A JP2007129231 A JP 2007129231A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- HBVFXTAPOLSOPB-UHFFFAOYSA-N nickel vanadium Chemical compound [V].[Ni] HBVFXTAPOLSOPB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 37
- 238000000034 method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】極めて低い電圧低下量VCEONの非パンチスルートレンチIGBTデバイスにおいて、単結晶シリコンウエハ125中に、バッファー領域の一部を構成するN−非エピタキシャルフロートゾーン126とその底部表面にN+バッファー層である追加の空乏ストップ層30を設ける。また、バッファー層30底部表面に隣接するように配置されたPタイプの弱アノード層と前記弱アノード層に接続する裏面側金属接点(23,24,25,26の積層構造)を備える。
【選択図】図6
Description
図2は、本願出願人による米国特許第6,707,111号に記載されている従来のパンチスルータイプのプレーナーIGBTを示し、本明細書では、この米国特許の全内容を参考として援用する。
11 フロートゾーン材料のP+本体
12 エピタキシャル法でデポジットされた層
13 エピタキシャル法でデポジットされた層
14 チャンネル領域
15 ソース
16 ゲートラティス
17 エミッタ電極
18 コレクタ電極
20 FZウェーハ
21 コレクタ領域
23 アルミ層
24 チタン層
25 ニッケル−バナジウム層
26 銀層
27 本体
30 打ち込み部
125 スタートウェーハ
131、132 トレンチ
133、134 絶縁膜
135、136 ゲート
140、141 エミッタ領域
142、143 接点領域
150 接点領域
151 絶縁酸化膜
152 エミッタ接点
153 コレクタ接点
154 P+領域
Claims (6)
- 約250ミクロン未満の厚さを有するフロートゾーンシリコンのNタイプのウェーハと、前記薄いウェーハの頂部表面に形成されたMOSゲートを有する接合部パターンおよび金属部と、前記ウェーハの底部表面に隣接して形成された空乏ストップN+バッファゾーンと、前記N+バッファゾーンに形成され、前記ウェーハの底部まで延びるPタイプの弱アノードと、前記弱アノードに接続され、それを横断する裏側のメタル接点とを備えるトレンチタイプのIGBT。
- 頂部表面および底部表面を有する、フロートゾーンシリコンのNタイプのウェーハと、
前記Nタイプのウェーハの頂部表面に形成されたMOSゲートが設けられた接合部パターンと、
前記Nタイプのウェーハの頂部表面に設けられた少なくとも1つの金属層と、
頂部表面および底部表面を有し、前記Nタイプのウェーハの底部表面に隣接するように設けられた空乏ストップN+バッファゾーンと、
前記N+バッファゾーンの底部表面に隣接するように配置されたPタイプの弱アノードと、
前記Pタイプの弱アノードに接続された裏側の金属接点とを備える、トレンチタイプのIGBTデバイス。 - 前記裏側の金属接点は、アルミ層と、前記アルミ層に隣接するように配置されたチタン層と、前記チタン層に隣接するように配置されたニッケル−バナジウム層と、前記ニッケル−バナジウム層に隣接するように配置されたシルバー層とを含む、請求項2記載のIGBTデバイス。
- フロートゾーンシリコンのNタイプのウェーハは、約250ミクロン未満の厚さを有する、請求項2記載のIGBTデバイス。
- 前記N+バッファゾーンは、打ち込まれた水素を含む、請求項1記載のIGBTデバイス。
- 前記N+バッファゾーンは、打ち込まれた水素を含む、請求項2記載のIGBTデバイス。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/265,489 US7956419B2 (en) | 2005-11-02 | 2005-11-02 | Trench IGBT with depletion stop layer |
Publications (1)
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JP2007129231A true JP2007129231A (ja) | 2007-05-24 |
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JP2006298340A Pending JP2007129231A (ja) | 2005-11-02 | 2006-11-02 | 空乏ストップ層を有するトレンチ絶縁ゲートバイポーラトランジスタ(igbt) |
Country Status (4)
Country | Link |
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US (1) | US7956419B2 (ja) |
EP (1) | EP1801885A3 (ja) |
JP (1) | JP2007129231A (ja) |
KR (1) | KR100776786B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015201660A (ja) * | 2007-07-10 | 2015-11-12 | 富士電機株式会社 | トレンチ型絶縁ゲートmos半導体装置 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102714218B (zh) | 2009-11-10 | 2015-09-30 | Abb技术有限公司 | 穿通半导体装置及其生产方法 |
CN104054178B (zh) | 2012-03-30 | 2017-09-08 | 富士电机株式会社 | 半导体装置的制造方法 |
US9023715B2 (en) | 2012-04-24 | 2015-05-05 | Globalfoundries Inc. | Methods of forming bulk FinFET devices so as to reduce punch through leakage currents |
US9105579B2 (en) * | 2012-07-18 | 2015-08-11 | Avogy, Inc. | GaN power device with solderable back metal |
KR101876579B1 (ko) * | 2012-09-13 | 2018-07-10 | 매그나칩 반도체 유한회사 | 전력용 반도체 소자 및 그 소자의 제조 방법 |
US8937317B2 (en) | 2012-12-28 | 2015-01-20 | Avogy, Inc. | Method and system for co-packaging gallium nitride electronics |
US9324645B2 (en) | 2013-05-23 | 2016-04-26 | Avogy, Inc. | Method and system for co-packaging vertical gallium nitride power devices |
CN104253151B (zh) | 2013-06-27 | 2017-06-27 | 无锡华润上华半导体有限公司 | 场截止型反向导通绝缘栅双极型晶体管及其制造方法 |
US9324809B2 (en) | 2013-11-18 | 2016-04-26 | Avogy, Inc. | Method and system for interleaved boost converter with co-packaged gallium nitride power devices |
JP6237921B2 (ja) * | 2014-09-30 | 2017-11-29 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
CN106991221B (zh) * | 2017-03-24 | 2020-04-24 | 清华大学 | 一种基于igbt器件瞬态物理过程的分段折线建模方法 |
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JP2002314083A (ja) * | 2001-02-09 | 2002-10-25 | Fuji Electric Co Ltd | 半導体装置 |
US20030201454A1 (en) * | 2002-04-25 | 2003-10-30 | International Rectifier Corp. | Trench IGBT |
JP2003533047A (ja) * | 2000-05-05 | 2003-11-05 | インターナショナル・レクチファイヤー・コーポレーション | パンチスルーノンエピタキシャルigbtのバッファ領域への水素注入方法 |
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KR100533687B1 (ko) * | 2004-02-23 | 2005-12-05 | 재단법인서울대학교산학협력재단 | 이중 게이트 트랜지스터 |
-
2005
- 2005-11-02 US US11/265,489 patent/US7956419B2/en active Active
-
2006
- 2006-11-02 JP JP2006298340A patent/JP2007129231A/ja active Pending
- 2006-11-02 KR KR1020060108006A patent/KR100776786B1/ko active IP Right Grant
- 2006-11-02 EP EP06022836A patent/EP1801885A3/en not_active Withdrawn
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JP2003533047A (ja) * | 2000-05-05 | 2003-11-05 | インターナショナル・レクチファイヤー・コーポレーション | パンチスルーノンエピタキシャルigbtのバッファ領域への水素注入方法 |
JP2002314083A (ja) * | 2001-02-09 | 2002-10-25 | Fuji Electric Co Ltd | 半導体装置 |
JP2002246596A (ja) * | 2001-02-19 | 2002-08-30 | Hitachi Ltd | 絶縁ゲート型半導体装置及びその製造方法 |
US20030201454A1 (en) * | 2002-04-25 | 2003-10-30 | International Rectifier Corp. | Trench IGBT |
US20040178457A1 (en) * | 2003-03-14 | 2004-09-16 | International Rectifier Corporation | Angled implant for shorter trench emitter |
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JP2015201660A (ja) * | 2007-07-10 | 2015-11-12 | 富士電機株式会社 | トレンチ型絶縁ゲートmos半導体装置 |
JP2017195406A (ja) * | 2007-07-10 | 2017-10-26 | 富士電機株式会社 | トレンチゲート型絶縁ゲートバイポーラトランジスタ及びその製造方法 |
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US20070096167A1 (en) | 2007-05-03 |
US7956419B2 (en) | 2011-06-07 |
EP1801885A3 (en) | 2008-09-03 |
EP1801885A2 (en) | 2007-06-27 |
KR20070047726A (ko) | 2007-05-07 |
KR100776786B1 (ko) | 2007-11-19 |
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