KR100776786B1 - 공핍 중지층을 구비한 트렌치 igbt - Google Patents
공핍 중지층을 구비한 트렌치 igbt Download PDFInfo
- Publication number
- KR100776786B1 KR100776786B1 KR1020060108006A KR20060108006A KR100776786B1 KR 100776786 B1 KR100776786 B1 KR 100776786B1 KR 1020060108006 A KR1020060108006 A KR 1020060108006A KR 20060108006 A KR20060108006 A KR 20060108006A KR 100776786 B1 KR100776786 B1 KR 100776786B1
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- type
- igbts
- trench
- buffer zone
- Prior art date
Links
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- HBVFXTAPOLSOPB-UHFFFAOYSA-N nickel vanadium Chemical compound [V].[Ni] HBVFXTAPOLSOPB-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 33
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 241000270730 Alligator mississippiensis Species 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000006263 metalation reaction Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (6)
- 트렌치형 IGBT로서:250㎛보다 작은 두께를 갖는 플로트존 실리콘의 N형 웨이퍼와;상기 웨이퍼의 상부표면상에 형성된 MOS게이트 접합 패턴 및 금속과;상기 웨이퍼의 바닥 표면에 인접하여 형성된 공핍 중지 N+ 버퍼존과;상기 N+ 버퍼존 상에 형성되어 상기 웨이퍼의 상기 바닥 표면에까지 연장되는 약하게 도핑된 P형 애노드와; 그리고상기 약하게 도핑된 P형 애노드에 접속되고 상기 약하게 도핑된 P형 애노드와 교차하는 후면 금속 컨택을 포함하는 것을 특징으로 하는 트렌치형 IGBT.
- 트렌치형 IGBT로서:플로트존 실리콘의 N형 웨이퍼와, 여기서 상기 N형 웨이퍼는 상부 표면 및 바닥 표면을 구비하며;상기 N형 웨이퍼의 상기 상부 표면상에 형성된 MOS 게이트 접합 패턴과;상기 N형 웨이퍼의 상기 상부 표면상에 배치되는 적어도 하나의 금속층과;상부 표면과 바닥 표면을 갖는 공핍 중지 N+ 버퍼존과, 여기서 상기 N+ 버퍼존은 상기 N형 웨이퍼의 상기 바닥 표면에 인접하게 배치되며;상기 N+ 버퍼존의 상기 바닥 표면에 인접하게 배치되는 약하게 도핑된 P형 애노드와; 그리고상기 약하게 도핑된 P형 애노드에 접속된 후면 금속 컨택을 포함하는 것을 특징으로 하는 트렌치형 IGBT.
- 제 2항에 있어서, 상기 후면 금속 컨택은 알루미늄층과, 상기 알루미늄층에 인접하여 배치된 티타늄층과, 상기 티타늄층에 인접하여 배치된 니켈-바나듐층과, 그리고 상기 니켈-바나듐층에 인접하게 배치된 은층으로 구성되는 것을 특징으로 하는 트렌치형 IGBT.
- 제 2항에 있어서, 상기 플로트존 실리콘의 N형 웨이퍼의 두께는 250㎛보다 작은 것을 특징으로 하는 트렌치형 IGBT.
- 제 1항에 있어서, 상기 N+ 버퍼존에는 수소가 주입되어 있는 것을 특징으로 하는 트렌치형 IGBT.
- 제 2항에 있어서, 상기 N+ 버퍼존에는 수소가 주입되어 있는 것을 특징으로 하는 트렌치형 IGBT.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/265,489 | 2005-11-02 | ||
US11/265,489 US7956419B2 (en) | 2005-11-02 | 2005-11-02 | Trench IGBT with depletion stop layer |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070047726A KR20070047726A (ko) | 2007-05-07 |
KR100776786B1 true KR100776786B1 (ko) | 2007-11-19 |
Family
ID=37969739
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060108006A KR100776786B1 (ko) | 2005-11-02 | 2006-11-02 | 공핍 중지층을 구비한 트렌치 igbt |
Country Status (4)
Country | Link |
---|---|
US (1) | US7956419B2 (ko) |
EP (1) | EP1801885A3 (ko) |
JP (1) | JP2007129231A (ko) |
KR (1) | KR100776786B1 (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5596278B2 (ja) * | 2007-07-10 | 2014-09-24 | 富士電機株式会社 | トレンチ型絶縁ゲートmos半導体装置 |
EP2499672A2 (en) | 2009-11-10 | 2012-09-19 | ABB Technology AG | Punch-through semiconductor device and method for producing same |
JP5880691B2 (ja) | 2012-03-30 | 2016-03-09 | 富士電機株式会社 | 半導体装置の製造方法 |
US9023715B2 (en) | 2012-04-24 | 2015-05-05 | Globalfoundries Inc. | Methods of forming bulk FinFET devices so as to reduce punch through leakage currents |
US9105579B2 (en) * | 2012-07-18 | 2015-08-11 | Avogy, Inc. | GaN power device with solderable back metal |
KR101876579B1 (ko) * | 2012-09-13 | 2018-07-10 | 매그나칩 반도체 유한회사 | 전력용 반도체 소자 및 그 소자의 제조 방법 |
US8937317B2 (en) | 2012-12-28 | 2015-01-20 | Avogy, Inc. | Method and system for co-packaging gallium nitride electronics |
US9324645B2 (en) | 2013-05-23 | 2016-04-26 | Avogy, Inc. | Method and system for co-packaging vertical gallium nitride power devices |
CN104253151B (zh) * | 2013-06-27 | 2017-06-27 | 无锡华润上华半导体有限公司 | 场截止型反向导通绝缘栅双极型晶体管及其制造方法 |
US9324809B2 (en) | 2013-11-18 | 2016-04-26 | Avogy, Inc. | Method and system for interleaved boost converter with co-packaged gallium nitride power devices |
CN106062960B (zh) * | 2014-09-30 | 2019-12-10 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
CN106991221B (zh) * | 2017-03-24 | 2020-04-24 | 清华大学 | 一种基于igbt器件瞬态物理过程的分段折线建模方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5679966A (en) | 1995-10-05 | 1997-10-21 | North Carolina State University | Depleted base transistor with high forward voltage blocking capability |
JPH10294449A (ja) | 1994-11-25 | 1998-11-04 | Fuji Electric Co Ltd | 半導体装置 |
JP2001044415A (ja) | 1999-05-26 | 2001-02-16 | Toyota Central Res & Dev Lab Inc | サイリスタを有する半導体装置及びその製造方法 |
KR20050083340A (ko) * | 2004-02-23 | 2005-08-26 | 재단법인서울대학교산학협력재단 | 이중 게이트 트랜지스터 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1247293B (it) | 1990-05-09 | 1994-12-12 | Int Rectifier Corp | Dispositivo transistore di potenza presentante una regione ultra-profonda, a maggior concentrazione |
DE4313170A1 (de) * | 1993-04-22 | 1994-10-27 | Abb Management Ag | Leistungshalbleiterbauelement |
US5795793A (en) | 1994-09-01 | 1998-08-18 | International Rectifier Corporation | Process for manufacture of MOS gated device with reduced mask count |
US6246090B1 (en) * | 2000-03-14 | 2001-06-12 | Intersil Corporation | Power trench transistor device source region formation using silicon spacer |
US6242288B1 (en) | 2000-05-05 | 2001-06-05 | International Rectifier Corp. | Anneal-free process for forming weak collector |
US6753580B1 (en) | 2000-05-05 | 2004-06-22 | International Rectifier Corporation | Diode with weak anode |
US6482681B1 (en) * | 2000-05-05 | 2002-11-19 | International Rectifier Corporation | Hydrogen implant for buffer zone of punch-through non epi IGBT |
JP3687614B2 (ja) | 2001-02-09 | 2005-08-24 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
JP4932088B2 (ja) * | 2001-02-19 | 2012-05-16 | ルネサスエレクトロニクス株式会社 | 絶縁ゲート型半導体装置の製造方法 |
US6683331B2 (en) | 2002-04-25 | 2004-01-27 | International Rectifier Corporation | Trench IGBT |
US6919248B2 (en) * | 2003-03-14 | 2005-07-19 | International Rectifier Corporation | Angled implant for shorter trench emitter |
-
2005
- 2005-11-02 US US11/265,489 patent/US7956419B2/en active Active
-
2006
- 2006-11-02 KR KR1020060108006A patent/KR100776786B1/ko active IP Right Grant
- 2006-11-02 EP EP06022836A patent/EP1801885A3/en not_active Withdrawn
- 2006-11-02 JP JP2006298340A patent/JP2007129231A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10294449A (ja) | 1994-11-25 | 1998-11-04 | Fuji Electric Co Ltd | 半導体装置 |
US5679966A (en) | 1995-10-05 | 1997-10-21 | North Carolina State University | Depleted base transistor with high forward voltage blocking capability |
JP2001044415A (ja) | 1999-05-26 | 2001-02-16 | Toyota Central Res & Dev Lab Inc | サイリスタを有する半導体装置及びその製造方法 |
KR20050083340A (ko) * | 2004-02-23 | 2005-08-26 | 재단법인서울대학교산학협력재단 | 이중 게이트 트랜지스터 |
Also Published As
Publication number | Publication date |
---|---|
EP1801885A3 (en) | 2008-09-03 |
US7956419B2 (en) | 2011-06-07 |
KR20070047726A (ko) | 2007-05-07 |
EP1801885A2 (en) | 2007-06-27 |
JP2007129231A (ja) | 2007-05-24 |
US20070096167A1 (en) | 2007-05-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100776786B1 (ko) | 공핍 중지층을 구비한 트렌치 igbt | |
JP4128777B2 (ja) | 絶縁ゲートバイポーラトランジスタ(igbt)及びその製造方法 | |
JP6356322B2 (ja) | トレンチゲート型絶縁ゲートバイポーラトランジスタ | |
US5342797A (en) | Method for forming a vertical power MOSFET having doped oxide side wall spacers | |
US8592894B2 (en) | Method of forming a power semiconductor device and power semiconductor device | |
US11824090B2 (en) | Back side dopant activation in field stop IGBT | |
US9941383B2 (en) | Fast switching IGBT with embedded emitter shorting contacts and method for making same | |
JPH09503626A (ja) | 高いラッチアップ耐性を備えた炭化ケイ素ベースのmis構造 | |
CN110419111B (zh) | 自对准且稳健的绝缘栅双极晶体管器件 | |
US11916138B2 (en) | Etch stop layer for injecting carriers into drift layer for a vertical power device | |
US11114552B2 (en) | Insulated gate turn-off device with designated breakdown areas between gate trenches | |
US20050227461A1 (en) | Semiconductor device having increased switching speed | |
US20190115423A1 (en) | Insulated gate power devices with reduced carrier injection in termination area | |
CN114256340A (zh) | 一种绝缘栅双极晶体管 | |
US11757017B2 (en) | Anti-parallel diode formed using damaged crystal structure in a vertical power device | |
US20240088226A1 (en) | Insulated gate turn-off device with short channel pmos transistor | |
JPH10335630A (ja) | 半導体装置及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20121024 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20131024 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20141027 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20151026 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20161028 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20171027 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20181029 Year of fee payment: 12 |