JP2007081122A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2007081122A JP2007081122A JP2005266927A JP2005266927A JP2007081122A JP 2007081122 A JP2007081122 A JP 2007081122A JP 2005266927 A JP2005266927 A JP 2005266927A JP 2005266927 A JP2005266927 A JP 2005266927A JP 2007081122 A JP2007081122 A JP 2007081122A
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- terminal
- mos transistor
- semiconductor device
- voltage
- semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 230000015556 catabolic process Effects 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 230000002265 prevention Effects 0.000 claims abstract description 5
- 239000007788 liquid Substances 0.000 claims description 26
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 238000005520 cutting process Methods 0.000 description 15
- 238000009792 diffusion process Methods 0.000 description 14
- 239000010410 layer Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
- B41J2/04541—Specific driving circuit
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
- B41J2/0458—Control methods or devices therefor, e.g. driver circuits, control circuits controlling heads based on heating elements forming bubbles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
- G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
【解決手段】 半導体基板に配された情報を記録するためのメモリ素子と、該メモリ素子に情報を記録及び読み出しを行うために電圧を印加するための第1の端子と、前記第1の端子に接続された静電破壊防止用回路とを有する半導体装置であって、前記静電破壊防止用回路は、前記第1の端子にカソードが接続され、アノードが接地電位に接続されたダイオードと、前記端子にドレイン及びゲートが接続され、接地電位にソース及びバックゲートが接続された第1のMOSトランジスタと、を含むことを特徴とする。
【選択図】 図1
Description
このようにヒューズROMを用いる場合に、その入出力端子に静電気による大電圧が印加された場合の静電破壊を防止するための静電破壊回路が用いられている。(例えば特許文献2)
前記静電破壊防止用回路は、前記第1の端子にカソードが接続され、アノードが接地電位に接続されたダイオードと、前記端子にドレイン及びゲートが接続され、接地電位にソース及びバックゲートが接続された第1のMOSトランジスタと、を含むことを特徴とする。
101、102 内部回路
FM1 フィールドMOSトランジスタ
Claims (10)
- 半導体基板に配された情報を記録するためのメモリ素子と、該メモリ素子に情報を記録及び読み出しを行うために電圧を印加するための第1の端子と、前記第1の端子に接続された静電破壊防止用回路とを有する半導体装置であって、
前記静電破壊防止用回路は、前記第1の端子にカソードが接続され、アノードが接地電位に接続されたダイオードと、前記端子にドレイン及びゲートが接続され、接地電位にソース及びバックゲートが接続された第1のMOSトランジスタと、を含むことを特徴とする半導体装置。 - 前記メモリ素子がヒューズROMであることを特徴とする請求項1に記載の半導体装置。
- 前記第1のMOSトランジスタが、フィールドMOSトランジスタであることを特徴とする請求項1または2に記載の半導体装置。
- 前記ヒューズROMの一端は、情報の記録及び読み込み時に動作する第2のMOSトランジスタに接続され、他端は、読込み時に前記ヒューズが接続された端子をプルアップする為の抵抗素子が接続され、該抵抗素子の他端は、情報の読込み時に使用する電源に接続されていることを特徴とする請求項2に記載の半導体装置。
- 前記フィールドMOSトランジスタは、第1導電型の半導体基板上に配置され、バックゲート領域が、第1導電型の第1の半導体領域から構成され、ドレインは、第2導電型の第2の半導体領域で形成され、該第2の半導体領域は前記ダイオードのカソードと兼用されており、ソースは第2導電型の第3の半導体領域で形成されていることを特徴とする請求項3に記載の半導体装置。
- 前記MOSトランジスタのゲート電極は金属で形成され、フィールド酸化膜と層間膜の上に形成されることを特徴とする請求項1〜5のいずれか1項に記載の半導体装置。
- 前記MOSトランジスタは、フィールド酸化膜の下部に、第1導電型で第1の半導体領域よりも不純物濃度の高い第4の半導体領域が配されていることを特徴とする請求項1〜6のいずれか1項に記載の半導体装置。
- さらに、電気熱変換素子と、該電気熱変換素子を駆動するための第3のMOSトランジスタと、を有することを特徴とする請求項1〜7のいずれか1項に記載の半導体装置。
- 請求項8記載の半導体装置を備える液体吐出記録ヘッド。
- 請求項9記載の液体吐出記録ヘッドを備えた液体吐出記録装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005266927A JP4950463B2 (ja) | 2005-09-14 | 2005-09-14 | 半導体装置 |
US11/467,675 US7463503B2 (en) | 2005-09-14 | 2006-08-28 | Semiconductor device |
CNB2006101542116A CN100499126C (zh) | 2005-09-14 | 2006-09-14 | 半导体器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005266927A JP4950463B2 (ja) | 2005-09-14 | 2005-09-14 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007081122A true JP2007081122A (ja) | 2007-03-29 |
JP4950463B2 JP4950463B2 (ja) | 2012-06-13 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005266927A Expired - Fee Related JP4950463B2 (ja) | 2005-09-14 | 2005-09-14 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7463503B2 (ja) |
JP (1) | JP4950463B2 (ja) |
CN (1) | CN100499126C (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009099679A (ja) * | 2007-10-15 | 2009-05-07 | Mitsumi Electric Co Ltd | Mosトランジスタ及びこれを用いた半導体集積回路装置 |
JP2010287644A (ja) * | 2009-06-10 | 2010-12-24 | New Japan Radio Co Ltd | 半導体装置及びその製造方法 |
JP2017108114A (ja) * | 2015-12-09 | 2017-06-15 | 富士電機株式会社 | トリミング装置 |
US11990192B2 (en) | 2021-10-22 | 2024-05-21 | Kabushiki Kaisha Toshiba | Integrated circuit with ESD protection |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009054851A (ja) * | 2007-08-28 | 2009-03-12 | Panasonic Corp | 半導体集積回路 |
KR100985042B1 (ko) | 2008-07-07 | 2010-10-04 | 주식회사 텔릿와이어리스솔루션즈 | 휴대용 단말의 내부 회로 보호 장치 및 방법 |
US10304645B2 (en) * | 2015-12-09 | 2019-05-28 | Fuji Electric Co., Ltd. | Trimming apparatus |
US9940986B2 (en) * | 2015-12-16 | 2018-04-10 | Globalfoundries Inc. | Electrostatic discharge protection structures for eFuses |
US10682124B2 (en) * | 2016-02-18 | 2020-06-16 | Ur24 Technology, Llc | Automated collection and analysis of body fluids |
KR20200077746A (ko) * | 2018-12-21 | 2020-07-01 | 주식회사 실리콘웍스 | 정전기 방전 보호 회로 |
Citations (4)
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JPH06232358A (ja) * | 1993-02-02 | 1994-08-19 | Rohm Co Ltd | 保護回路内蔵ic |
JP2000123593A (ja) * | 1998-08-13 | 2000-04-28 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
JP2001026111A (ja) * | 1999-07-13 | 2001-01-30 | Canon Inc | 記録ヘッドおよび該記録ヘッドを備えた記録装置 |
JP2005229056A (ja) * | 2004-02-16 | 2005-08-25 | Toshiba Microelectronics Corp | 半導体装置 |
Family Cites Families (21)
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CA1127227A (en) * | 1977-10-03 | 1982-07-06 | Ichiro Endo | Liquid jet recording process and apparatus therefor |
US4330787A (en) * | 1978-10-31 | 1982-05-18 | Canon Kabushiki Kaisha | Liquid jet recording device |
US4345262A (en) * | 1979-02-19 | 1982-08-17 | Canon Kabushiki Kaisha | Ink jet recording method |
US4463359A (en) * | 1979-04-02 | 1984-07-31 | Canon Kabushiki Kaisha | Droplet generating method and apparatus thereof |
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JPS59138461A (ja) | 1983-01-28 | 1984-08-08 | Canon Inc | 液体噴射記録装置 |
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JPH0837284A (ja) | 1994-07-21 | 1996-02-06 | Nippondenso Co Ltd | 半導体集積回路装置 |
JP3144330B2 (ja) | 1996-12-26 | 2001-03-12 | 日本電気株式会社 | 半導体装置 |
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-
2005
- 2005-09-14 JP JP2005266927A patent/JP4950463B2/ja not_active Expired - Fee Related
-
2006
- 2006-08-28 US US11/467,675 patent/US7463503B2/en active Active
- 2006-09-14 CN CNB2006101542116A patent/CN100499126C/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06232358A (ja) * | 1993-02-02 | 1994-08-19 | Rohm Co Ltd | 保護回路内蔵ic |
JP2000123593A (ja) * | 1998-08-13 | 2000-04-28 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
JP2001026111A (ja) * | 1999-07-13 | 2001-01-30 | Canon Inc | 記録ヘッドおよび該記録ヘッドを備えた記録装置 |
JP2005229056A (ja) * | 2004-02-16 | 2005-08-25 | Toshiba Microelectronics Corp | 半導体装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009099679A (ja) * | 2007-10-15 | 2009-05-07 | Mitsumi Electric Co Ltd | Mosトランジスタ及びこれを用いた半導体集積回路装置 |
JP2010287644A (ja) * | 2009-06-10 | 2010-12-24 | New Japan Radio Co Ltd | 半導体装置及びその製造方法 |
JP2017108114A (ja) * | 2015-12-09 | 2017-06-15 | 富士電機株式会社 | トリミング装置 |
US11990192B2 (en) | 2021-10-22 | 2024-05-21 | Kabushiki Kaisha Toshiba | Integrated circuit with ESD protection |
Also Published As
Publication number | Publication date |
---|---|
US7463503B2 (en) | 2008-12-09 |
CN1933156A (zh) | 2007-03-21 |
US20070058461A1 (en) | 2007-03-15 |
CN100499126C (zh) | 2009-06-10 |
JP4950463B2 (ja) | 2012-06-13 |
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