JP2007080338A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2007080338A5 JP2007080338A5 JP2005265080A JP2005265080A JP2007080338A5 JP 2007080338 A5 JP2007080338 A5 JP 2007080338A5 JP 2005265080 A JP2005265080 A JP 2005265080A JP 2005265080 A JP2005265080 A JP 2005265080A JP 2007080338 A5 JP2007080338 A5 JP 2007080338A5
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- vcc
- circuit
- drain
- gnd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000002784 hot electron Substances 0.000 claims description 15
- 238000003860 storage Methods 0.000 claims description 7
- 230000005641 tunneling Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 13
- LPQOADBMXVRBNX-UHFFFAOYSA-N AC1LDCW0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000003213 activating Effects 0.000 description 4
- 230000000644 propagated Effects 0.000 description 4
- 230000037138 Vds Effects 0.000 description 3
- 230000000875 corresponding Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 230000003071 parasitic Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005265080A JP4832835B2 (ja) | 2005-09-13 | 2005-09-13 | 不揮発性半導体記憶装置の読み書き制御方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005265080A JP4832835B2 (ja) | 2005-09-13 | 2005-09-13 | 不揮発性半導体記憶装置の読み書き制御方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011167479A Division JP5238859B2 (ja) | 2011-07-29 | 2011-07-29 | 不揮発性半導体記憶装置およびその読み書き制御方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007080338A JP2007080338A (ja) | 2007-03-29 |
JP2007080338A5 true JP2007080338A5 (zh) | 2008-10-23 |
JP4832835B2 JP4832835B2 (ja) | 2011-12-07 |
Family
ID=37940501
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005265080A Expired - Fee Related JP4832835B2 (ja) | 2005-09-13 | 2005-09-13 | 不揮発性半導体記憶装置の読み書き制御方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4832835B2 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5343916B2 (ja) | 2010-04-16 | 2013-11-13 | 富士通セミコンダクター株式会社 | 半導体メモリ |
JP2013218758A (ja) * | 2012-04-06 | 2013-10-24 | Genusion:Kk | 不揮発性半導体記憶装置 |
CN107039452B (zh) * | 2015-12-29 | 2020-02-21 | 台湾积体电路制造股份有限公司 | 制造嵌入式闪存单元的均匀的隧道电介质的方法 |
US10269822B2 (en) | 2015-12-29 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method to fabricate uniform tunneling dielectric of embedded flash memory cell |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3878681B2 (ja) * | 1995-06-15 | 2007-02-07 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
JP2888181B2 (ja) * | 1995-09-18 | 1999-05-10 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
US5687118A (en) * | 1995-11-14 | 1997-11-11 | Programmable Microelectronics Corporation | PMOS memory cell with hot electron injection programming and tunnelling erasing |
JPH09246404A (ja) * | 1996-03-04 | 1997-09-19 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
JP3962769B2 (ja) * | 2004-11-01 | 2007-08-22 | 株式会社Genusion | 不揮発性半導体記憶装置およびその書込方法 |
-
2005
- 2005-09-13 JP JP2005265080A patent/JP4832835B2/ja not_active Expired - Fee Related
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100458412B1 (ko) | 전압 레벨을 변환하는 레벨 시프터 및 상기 레벨 시프터를구비한 반도체 기억 장치 | |
US6288944B1 (en) | NAND type nonvolatile memory with improved erase-verify operations | |
JP4084922B2 (ja) | 不揮発性記憶装置の書込み方法 | |
JP3886673B2 (ja) | 不揮発性半導体記憶装置 | |
US9984761B2 (en) | Semiconductor memory device | |
US5818761A (en) | Non-volatile semiconductor memory device capable of high speed programming/erasure | |
US8017994B2 (en) | Nonvolatile semiconductor memory | |
JP4434405B2 (ja) | 不揮発性半導体記憶装置 | |
US8605512B2 (en) | Nonvolatile semiconductor memory device and method of operating a nonvolatile memory device | |
JP3694422B2 (ja) | ロウデコーダ回路 | |
KR100706247B1 (ko) | 플래시 메모리 장치 및 그것의 독출 방법 | |
JP3976774B1 (ja) | 不揮発性半導体記憶装置およびその制御方法 | |
JP2000236031A (ja) | 不揮発性半導体記憶装置 | |
JP4832835B2 (ja) | 不揮発性半導体記憶装置の読み書き制御方法 | |
US7697334B2 (en) | Nonvolatile semiconductor memory device and writing method thereof | |
WO2006059375A1 (ja) | 半導体装置および半導体装置の制御方法 | |
JPH11134879A (ja) | 不揮発性半導体記憶装置 | |
JP2007080338A5 (zh) | ||
JP4113559B2 (ja) | 不揮発性半導体記憶装置およびその書込方法 | |
KR100784863B1 (ko) | 향상된 프로그램 성능을 갖는 플래시 메모리 장치 및그것의 프로그램 방법 | |
WO2002097821A1 (fr) | Dispositif de stockage non volatile a semi-conducteur | |
US5923589A (en) | Non-volatile semiconductor memory device having long-life memory cells and data erasing method | |
JP5238859B2 (ja) | 不揮発性半導体記憶装置およびその読み書き制御方法 | |
JP3263636B2 (ja) | 不揮発性半導体メモリ装置 | |
WO2007043136A9 (ja) | ディスターブを防止したnand型フラッシュメモリ |