JP2007067222A - 半導体光増幅器および光集積回路 - Google Patents
半導体光増幅器および光集積回路 Download PDFInfo
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Abstract
【解決手段】 InP基板11上に量子井戸構造の活性層14を、障壁層14bとして引張歪みを有するInGaAs膜、井戸層14wとして圧縮歪みを有するInGaAs膜を用いて構成する。井戸層14wのバンドギャップを狭くして、井戸層14wの電子の量子準位と障壁層14bの伝導帯の下端との実効的障壁高さΔEcを十分に確保する。
【選択図】 図5
Description
PASE(λ)=(G(λ)−1)nsp(eff)hνdν
と表される。ここで、nsp(eff)は実効的な反転パラメータ、hνは観測波長での光子エネルギー、dνは観測するASEバンド幅である。理想的な半導体光増幅器では、実効的な反転パラメータnsp(eff)が、広い波長帯域で1となり波長依存性が無視できるため、利得スペクトルG(λ)の形状はASEスペクトルPASE(λ)の形状で良く近似できる。以上から半導体光増幅器の利得帯域を表す指標として、ASEスペクトルのピーク波長での強度から−3dBとなるところの帯域幅(以下、「3dB帯域幅」と称する。)が用いられている。
K. Magari et,al.、IEEE J. Quantum Electronics、vol.30、No.3、p.695−702(1994) A. Godefroy et.al.、IEEE Photonics Technology Letters、vol.7、No.5、p.473−475(1995) A. Ougazzaden et. al.、Electronics Letters、vol.31、No.15、p.1242−1244(1995)
図2は、本発明の第1の実施の形態に係る第1例の半導体光増幅器の斜視図である。
また、図3は、図2に示すA−A断面図である。
実施例1では、図2〜図4に示す第1例の半導体光増幅器の構造と同様の構造を有する半導体光増幅器を作製した。
実施例2では、活性層の障壁層と井戸層の組成が異なる以外は実施例1と同様の構成を有する半導体光増幅器を作製した。図2〜図4を参照しつつ実施例2の半導体光増幅器を説明する。なお、実施例1と同一の部材の説明を省略する。
本発明の第2の実施の形態に係る光集積回路は、第1の実施の形態に係る第1例または第2例の半導体光増幅器を用いた光集積回路である。ここでは、光集積回路として、波長λ1の入力信号光を波長λ2の出力信号光に変換する波長変換器を例に説明する。
(付記1) InP基板と、
前記InP基板上に形成された活性層と、を備え、
前記活性層は、障壁層と井戸層とが交互に積層された量子井戸構造を有し、
前記障壁層が引張歪みを有するInGaAs膜からなり、前記井戸層が圧縮歪みを有するInGaAs膜からなる半導体光増幅器。
(付記2) 前記障壁層のInGaAs膜は、In1-xGaxAsと表した場合、0.47<x<1の組成範囲に設定され、
前記井戸層のInGaAs膜は、In1-yGayAsと表した場合、0<y<0.47の組成範囲に設定されることを特徴とする付記1記載の半導体光増幅器(但し、組成比は原子比率で表す。)。
(付記3) 前記障壁層のInGaAs膜のGa含有量xと、前記井戸層のInGaAs膜のGa含有量yとの差x−yが0.08以上でかつ1よりも小さい範囲に設定されることを特徴とする付記2記載の半導体光増幅器。
(付記4) 前記井戸層の厚さが2nm〜10nmの範囲に設定されることを特徴とする付記3記載の半導体光増幅器。
(付記5) 前記活性層は、井戸層の量子準位と障壁層の伝導体の下端とのエネルギー差が26meV以上に設定されてなることを特徴とする付記1または2記載の半導体光増幅器。
(付記6) 前記活性層は、その幅が1μm〜5μmの範囲に設定されてなることを特徴とする付記1〜5のうち、いずれか一項記載の半導体光増幅器。
(付記7) 前記InP基板上に活性層の幅方向の両側に注入電流を活性層に集中させる電流狭窄構造を有することを特徴とする付記1〜6のうち、いずれか一項記載の半導体光増幅器。
(付記8) 付記1〜7のうち、いずれか一項記載の半導体光増幅器と、前記InP基板上に形成された光機能素子とを備える光集積回路。
11 n型InP基板
12 n型InPクラッド層
13 下部光閉込層
14 活性層
14b,14b1〜14b5 障壁層
14w,14w1〜14w4 井戸層
15 上部光閉込層
16,20 p型InPクラッド層
18 p型InPブロック層
19 n型InPブロック層
21 InGaAsPコンタクト層
22,23 電極
24,25 反射防止層
31 i型InPブロック層
40 光集積回路
41 入力ポート
42 波長可変光源
44 出力ポート
45a,45b,46,48a,48b 光導波路
49 InP基板
Claims (4)
- InP基板と、
前記InP基板上に形成された活性層と、を備え、
前記活性層は、障壁層と井戸層とが交互に積層された量子井戸構造を有し、
前記障壁層が引張歪みを有するInGaAs膜からなり、前記井戸層が圧縮歪みを有するInGaAs膜からなる半導体光増幅器。 - 前記障壁層のInGaAs膜は、In1-xGaxAsと表した場合、0.47<x<1の組成範囲に設定され、
前記井戸層のInGaAs膜は、In1-yGayAsと表した場合、0<y<0.47の組成範囲に設定されることを特徴とする請求項1記載の半導体光増幅器(但し、組成比は原子比率で表す。)。 - 前記障壁層のInGaAs膜のGa含有量xと、前記井戸層のInGaAs膜のGa含有量yとの差x−yが0.08以上でかつ1よりも小さい範囲に設定されることを特徴とする請求項2記載の半導体光増幅器。
- 請求項1〜3のうち、いずれか一項記載の半導体光増幅器と、前記InP基板上に形成された光機能素子とを備える光集積回路。
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US11/360,660 US7542201B2 (en) | 2005-08-31 | 2006-02-24 | Semiconductor optical amplification device and optical integrated circuit |
DE602006017784T DE602006017784D1 (de) | 2005-08-31 | 2006-02-27 | Optischer Halbleiterverstärker und integrierte optische Schaltung |
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Cited By (4)
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JP2009224691A (ja) * | 2008-03-18 | 2009-10-01 | Fujitsu Ltd | 半導体光増幅器及びその製造方法並びに半導体光集積素子 |
US8472109B2 (en) | 2009-03-27 | 2013-06-25 | Fujitsu Limited | Semiconductor optical amplifier and optical module |
JP2017028330A (ja) * | 2016-11-09 | 2017-02-02 | アンリツ株式会社 | 半導体光増幅器 |
JP2019009169A (ja) * | 2017-06-21 | 2019-01-17 | 国立研究開発法人情報通信研究機構 | 半導体光デバイス、半導体光源、光集積回路、及び半導体光デバイスの製造方法 |
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JP5434324B2 (ja) * | 2009-07-14 | 2014-03-05 | 富士通株式会社 | 反射型半導体光増幅器 |
GB201002391D0 (en) * | 2010-02-12 | 2010-03-31 | Ct For Integrated Photonics Th | Semiconductor device |
US10411146B1 (en) | 2017-01-06 | 2019-09-10 | United States Of America As Represented By The Secretary Of The Air Force | High absorption infrared superlattices |
CN111463659B (zh) * | 2019-01-21 | 2021-08-13 | 华为技术有限公司 | 量子点半导体光放大器及其制备方法 |
US10852478B1 (en) * | 2019-05-28 | 2020-12-01 | Ciena Corporation | Monolithically integrated gain element |
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JPH09298338A (ja) * | 1996-05-09 | 1997-11-18 | Matsushita Electric Ind Co Ltd | 量子井戸結晶体および半導体レーザ |
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JP2009224691A (ja) * | 2008-03-18 | 2009-10-01 | Fujitsu Ltd | 半導体光増幅器及びその製造方法並びに半導体光集積素子 |
US8472109B2 (en) | 2009-03-27 | 2013-06-25 | Fujitsu Limited | Semiconductor optical amplifier and optical module |
JP2017028330A (ja) * | 2016-11-09 | 2017-02-02 | アンリツ株式会社 | 半導体光増幅器 |
JP2019009169A (ja) * | 2017-06-21 | 2019-01-17 | 国立研究開発法人情報通信研究機構 | 半導体光デバイス、半導体光源、光集積回路、及び半導体光デバイスの製造方法 |
Also Published As
Publication number | Publication date |
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US7542201B2 (en) | 2009-06-02 |
JP4584079B2 (ja) | 2010-11-17 |
DE602006017784D1 (de) | 2010-12-09 |
EP1760851A3 (en) | 2007-07-25 |
EP1760851A2 (en) | 2007-03-07 |
EP1760851B1 (en) | 2010-10-27 |
US20070047068A1 (en) | 2007-03-01 |
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