JP2007060593A - Piezoelectric device and manufacturing method thereof - Google Patents

Piezoelectric device and manufacturing method thereof Download PDF

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JP2007060593A
JP2007060593A JP2005251280A JP2005251280A JP2007060593A JP 2007060593 A JP2007060593 A JP 2007060593A JP 2005251280 A JP2005251280 A JP 2005251280A JP 2005251280 A JP2005251280 A JP 2005251280A JP 2007060593 A JP2007060593 A JP 2007060593A
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wiring board
piezoelectric
main
lid
bonding
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Fumio Fujisaki
文生 藤崎
Toshio Nakazawa
利夫 中澤
Hiroyuki Miura
浩之 三浦
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Kyocera Kinseki Corp
京セラキンセキ株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Abstract

<P>PROBLEM TO BE SOLVED: To provide a piezoelectric device capable of performing sealing with excellent airtightness by ensuring a piezoelectric vibrating element mount area inside the device. <P>SOLUTION: In the piezoelectric device, a step difference part 11 convex toward one principal side of a wiring board is provided to a side face of the wiring board 1, a joining member 9 is formed to a side face of the step difference part 11, an inner face of a side wall of a cover 8 and the joining member are joined, and an internal space formed by the cover and the one principal side of the wiring board is airtightly sealed. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、携帯用通信機器や電子計算機等の電子機器に用いられる圧電振動子や圧電発振器等の圧電デバイス及びその製造方法に関するものである。   The present invention relates to a piezoelectric device such as a piezoelectric vibrator or a piezoelectric oscillator used in an electronic device such as a portable communication device or an electronic computer, and a manufacturing method thereof.

従来、携帯用通信機器や電子計算機等の電子機器を構成する電子部品の一つとして圧電振動子、圧電発振器や弾性表面波フィルタ等の圧電デバイスが用いられている。   Conventionally, a piezoelectric device such as a piezoelectric vibrator, a piezoelectric oscillator, or a surface acoustic wave filter has been used as one of electronic components constituting an electronic device such as a portable communication device or an electronic computer.

かかる従来の圧電デバイスとして圧電振動子を例に説明する。内部に導配線が形成された積層構造の配線基板と、この配線基板の一方の主面上に支持した圧電振動素子を含む配線基板の一方の主面上の空間を包囲した状態で固定される逆碗状の金属リッドとから成り、前記配線基板本体は、複数のスルーホールを有した平板状の配線基板と、この配線基板の一方の主面周縁に沿って環状に形成された金属メッキ壁と、この金属メッキ壁の内側に位置する複数のスルーホールの各上側開口を塞ぐように配線基板の一方の主面に夫々配置され且つ圧電振動素子を支持する内部電極と、配線基板の他方の主面に複数のスルーホールの各下側開口を塞ぐように配置された金属メッキ外部接続用電極を備え、金属リッドは、金属メッキ壁の上面に固定される裾部と、この裾部底面に形成されるロウ材枠と、裾部から立ち上がった逆碗部とから成り、このロウ材枠と金属メッキ壁とを接合した構成を備えている。   A piezoelectric vibrator will be described as an example of such a conventional piezoelectric device. It is fixed in a state of surrounding a space on one main surface of the wiring substrate including a wiring substrate having a laminated structure in which conductive wiring is formed and a piezoelectric vibration element supported on one main surface of the wiring substrate. The wiring board body comprises a flat wiring board having a plurality of through holes, and a metal plating wall formed in an annular shape along the peripheral edge of one main surface of the wiring board. An internal electrode that is arranged on one main surface of the wiring board and supports the piezoelectric vibration element so as to block each upper opening of the plurality of through holes located inside the metal plating wall, and the other of the wiring board The main surface has metal-plated external connection electrodes arranged so as to block the lower openings of the plurality of through holes. The metal lid is fixed to the upper surface of the metal-plated wall, and the bottom surface of the hem is fixed to the bottom surface. From the brazing material frame to be formed and the hem Consists of a Chi rose Gyakuwan portion has a structure formed by joining and this brazing material frame and the metal plating wall.

上記のような圧電デバイス(圧電振動子)については、以下の技術情報文献に開示されている。   The piezoelectric device (piezoelectric vibrator) as described above is disclosed in the following technical information literature.

特開2003−87071号公報JP 2003-87071 A

尚、出願人は前記した先行技術文献情報で特定される先行技術文献以外には、本発明に関連する先行技術文献を本件出願時までに発見するに至らなかった。   In addition, the applicant has not found any prior art documents related to the present invention by the time of filing of the present application other than the prior art documents specified by the prior art document information described above.

しかしながら、従来のハット状(上記逆椀状と同意)の金属リッドを用いる圧電デバイスの場合、配線基板と金属リッドとの接合には、金属リッドではその開口部周囲を外側に折り返し(上記裾部と同意)を形成し、配線基板には金属リッドとの接合側主面の辺縁部に接合材を形成するための領域を確保し 金属リッドの折り返しと接合材とを接合する形態を有するため、圧電デバイスの周囲に接合のためのリング状の領域を確保する必要がある。この領域の確保のため圧電振動素子を搭載できる面積が縮小されてしまうという欠点があった。又、圧電振動素子の搭載面積を確保した場合、圧電デバイス本体の大きさが大きくなってしまう可能性がある。   However, in the case of a conventional piezoelectric device using a hat-shaped (conforms to the above-mentioned inverted saddle shape) metal lid, the periphery of the opening of the metal lid is folded back outwardly (the above-described hem portion) And the wiring board has a form for securing the region for forming the bonding material at the edge of the main surface of the bonding side with the metal lid and bonding the folding of the metal lid and the bonding material. It is necessary to secure a ring-shaped region for bonding around the piezoelectric device. In order to secure this region, there is a drawback that the area where the piezoelectric vibration element can be mounted is reduced. In addition, when the mounting area of the piezoelectric vibration element is secured, the size of the piezoelectric device body may be increased.

又、圧電振動素子の搭載面積が縮小されることにより、そこに搭載できる圧電振動素子の小型化が必要となる。圧電振動素子が小型になると、圧電振動素子の発振特性並びに、クリスタルインピーダンス(CI)値が高くなり、可変感度や起動特性が劣化してしまうといった欠点があった。   Further, since the mounting area of the piezoelectric vibration element is reduced, it is necessary to reduce the size of the piezoelectric vibration element that can be mounted thereon. When the piezoelectric vibration element is reduced in size, the oscillation characteristic and crystal impedance (CI) value of the piezoelectric vibration element are increased, and the variable sensitivity and the starting characteristic are deteriorated.

本発明は上述の欠点に鑑み案出されたもので、その目的は、デバイス内部に圧電振動素子の搭載面積を確保しつつ、良好な気密の封止が可能な圧電デバイスを提供することにある。   The present invention has been devised in view of the above-described drawbacks, and an object of the present invention is to provide a piezoelectric device capable of good airtight sealing while securing a mounting area of the piezoelectric vibration element inside the device. .

本発明の圧電デバイスは、配線基板と、この配線基板の一方の主面に少なくとも圧電振動素子が配置され、この圧電振動素子が配置された配線基板の一方の主面を被覆した形態で配線基板に固定される箱状の蓋体とから成る圧電デバイスにおいて、
配線基板の側面には、この配線基板の一方の主面に向かって凸の段差部が設けられ、この段差部の側面には接合材が形成され、蓋体の側壁部内面と接合材とが接合され、蓋体と配線基板の一方の主面により形成される内部空間が気密に封止されていることを特徴とする圧電デバイスである。
The piezoelectric device according to the present invention includes a wiring board and a wiring board in a form in which at least a piezoelectric vibration element is disposed on one main surface of the wiring board and one main surface of the wiring board on which the piezoelectric vibration element is disposed is covered. In a piezoelectric device comprising a box-shaped lid fixed to
A side surface of the wiring board is provided with a stepped portion projecting toward one main surface of the wiring board, a bonding material is formed on the side surface of the stepped portion, and an inner surface of the side wall portion of the lid and the bonding material are provided. The piezoelectric device is characterized in that an inner space formed by joining and formed by one main surface of the lid and the wiring board is hermetically sealed.

又、上記配線基板の一方の主面の辺縁部には、一方の主面表面から該配線基板の厚み方向に深さ成分を有する溝部が設けられていることを特徴とする上記記載の圧電デバイスでもある。   The piezoelectric device as described in the above item, wherein a groove portion having a depth component from the surface of the one main surface to the thickness direction of the wiring substrate is provided at the edge portion of the one main surface of the wiring substrate. It is also a device.

更に、デバイス外面に表れている蓋体と配線基板と接合部の表面に樹脂層が設けられていることを特徴とする上記記載の圧電デバイスでもある。   Further, the piezoelectric device described above is characterized in that a resin layer is provided on the surface of the lid, the wiring board, and the bonding portion appearing on the outer surface of the device.

本発明における圧電デバイスの製造方法は、マトリクス状に配列された複数個の配線基板領域が一体で構成されているマスター基板の該配線基板領域の各外周縁部に、各該配線基板領域の一方の主面に凸の段差部を設け、各々の該段差部の側面に接合材を形成し、該マスター基板における各配線基板領域の一方の主面上に、少なくとも圧電振動素子を搭載する工程Aと、
この圧電振動素子が搭載されている空間を気密に封止するための箱状の蓋体を、マスター基板の各配線基板領域の一方の主面上に配置し、この蓋体の側壁部内面と接合材とを接合する工程Bと、
マスター基板の各配線基板領域の外周に沿って一括的に切断分離することにより、複数個の圧電デバイスを同時に得る工程Cと、
を具備することを特徴とする圧電デバイスの製造方法である。
In the piezoelectric device manufacturing method according to the present invention, one of the wiring board regions is arranged on each outer peripheral edge of the wiring board region of the master board in which a plurality of wiring board regions arranged in a matrix are integrally formed. A step A in which a convex step portion is provided on the main surface of the substrate, a bonding material is formed on a side surface of each step portion, and at least a piezoelectric vibration element is mounted on one main surface of each wiring board region of the master substrate. When,
A box-like lid for hermetically sealing the space in which the piezoelectric vibration element is mounted is disposed on one main surface of each wiring board region of the master board, and the inner surface of the side wall of the lid Step B for bonding the bonding material;
Step C for simultaneously obtaining a plurality of piezoelectric devices by collectively cutting and separating along the outer periphery of each wiring board region of the master substrate;
A method for manufacturing a piezoelectric device comprising:

又、各々の配線基板領域の一方の主面の外周辺縁部には、一方の主面表面から配線基板領域の厚み方向に深さ成分を有する溝部を設けたことを特徴とする上記記載の圧電デバイスの製造方法でもある。   Further, the outer peripheral edge of one main surface of each wiring board region is provided with a groove having a depth component in the thickness direction of the wiring board region from the surface of one main surface. It is also a method for manufacturing a piezoelectric device.

更に、マスター基板を切断後に、各圧電デバイスの外面に表れている蓋体と配線基板と接合部の表面に樹脂層を設ける工程を具備することを特徴とする上記記載の圧電デバイスの製造方法でもある。   The method for manufacturing a piezoelectric device according to the above, further comprising a step of providing a resin layer on the surface of the lid, the wiring board, and the joint portion appearing on the outer surface of each piezoelectric device after cutting the master substrate. is there.

本発明の圧電デバイスによれば、配線基板の側面に形成した段差部の側面には、環状に接合材が形成され、箱状の蓋体の側壁部内面とこの接合材とが接合されているので、蓋体には、従来のようにその開口部周囲を外側に接合用の折り返しを形成する必要がなく、又、配線基板には蓋体との接合側主面上の辺縁部に接合材を形成するための領域を確保する必要もないため、配線基板の主面上に圧電振動素子の搭載面積を十分に確保することが可能となる。また、段差部を形成したことにより、この段差によって蓋体内に配線基板が必要以上に深く挿入し圧電振動素子の搭載空間が著しく狭くならないよう位置決めをすることができると共に、接合材がデバイス内部の圧電振動素子に飛散付着することを防止することが可能となる。   According to the piezoelectric device of the present invention, the bonding material is formed in an annular shape on the side surface of the step portion formed on the side surface of the wiring board, and the inner surface of the side wall portion of the box-shaped lid is bonded to the bonding material. Therefore, the lid body does not need to be folded back for joining around the opening as in the conventional case, and the wiring board is joined to the edge on the joint-side main surface with the lid body. Since it is not necessary to secure a region for forming the material, it is possible to sufficiently secure the mounting area of the piezoelectric vibration element on the main surface of the wiring board. In addition, since the step portion is formed, it is possible to position the wiring board so that the wiring board is not inserted deeper than necessary by the step and the mounting space of the piezoelectric vibration element is not significantly reduced, and the bonding material is provided inside the device. It is possible to prevent the piezoelectric vibration element from being scattered and adhered.

又、本発明の圧電デバイスによれば、配線基板の一方の主面の辺縁部には、一方の主面から該配線基板の厚み方向に深さ成分を有する溝部が設けられていることにより、配線基板の側面外周に形成した接合材が、接合の際に配線基板の主面上に流入しても、溝部で流入を防止し、流入した接合材による圧電振動素子等に悪影響を与えることがなくなる。   Further, according to the piezoelectric device of the present invention, a groove portion having a depth component from the one main surface to the thickness direction of the wiring substrate is provided on the edge portion of the one main surface of the wiring substrate. Even if the bonding material formed on the outer periphery of the side surface of the wiring board flows into the main surface of the wiring board at the time of bonding, the inflow is prevented at the groove portion, and the piezoelectric vibration element or the like caused by the flowing bonding material is adversely affected. Disappears.

更に、本発明の圧電デバイスによれば、デバイス外面に表れている蓋体と配線基板と接合部の表面に樹脂層が設けられていることによって、特にデバイスの4つの角部における接合強度が上がるので気密性を更に向上させることが可能となる。更に樹脂層が設けられていることによって、落下強度も向上させることが可能となる。   Furthermore, according to the piezoelectric device of the present invention, since the resin layer is provided on the surface of the lid, the wiring board, and the bonding portion appearing on the outer surface of the device, the bonding strength particularly at the four corners of the device is increased. As a result, the airtightness can be further improved. Furthermore, the drop strength can be improved by providing the resin layer.

更に本発明の圧電デバイスの製造方法によれば、箱状の蓋体の側壁部内面と各配線基板領域の外周部に形成した段差部側面に形成した接合材とを接合することにより、接合材が各配線基板領域の圧電振動素子搭載部分に入り込む或いは飛散することがなく、圧電振動素子に接合材が付着することがないので、発振特性が安定した圧電デバイスを提供することが可能となる。また、マスター基板による複数個の圧電デバイスの一括生産が可能なため、デバイスの生産性を向上させることが可能となる。   Furthermore, according to the piezoelectric device manufacturing method of the present invention, the bonding material is formed by bonding the inner surface of the side wall portion of the box-shaped lid and the bonding material formed on the side surface of the stepped portion formed on the outer peripheral portion of each wiring board region. Does not enter or scatter in the piezoelectric vibration element mounting portion of each wiring board region, and the bonding material does not adhere to the piezoelectric vibration element. Therefore, it is possible to provide a piezoelectric device with stable oscillation characteristics. In addition, since a plurality of piezoelectric devices can be collectively produced using the master substrate, device productivity can be improved.

又、各配線基板領域の外周に沿って段差部を設け、この段差部によって蓋体の配置位置決めをすることができるので、蓋体を一定した形態で各配線基板領域に配置することが可能となる。更に、装置側に蓋体配置位置決めのための機構を設ける必要がない。   In addition, since a step portion is provided along the outer periphery of each wiring board region, and the lid can be positioned and positioned by this step portion, the lid body can be arranged in each wiring board region in a fixed form. Become. Furthermore, it is not necessary to provide a mechanism for positioning and positioning the lid on the apparatus side.

又、マスター基板の各配線基板領域の外周付近に溝部を設けることにより、仮に接合材が配線基板領域内に流入してきても、溝部で流入を防止し、流入した接合材による圧電振動素子等に悪影響を与えることがなくなる。更に、デバイス外面に表れている蓋体と配線基板と接合部の表面に樹脂層を設けることによって、各デバイスの特に4つの角部の接合強度が上がるので気密性を更に向上させることが可能となり、又樹脂層を設けることによって、落下時の耐衝撃性強度も向上させることが可能となる。   Also, by providing a groove near the outer periphery of each wiring board area of the master board, even if the bonding material flows into the wiring board area, the groove prevents the inflow of the bonding material. There will be no adverse effects. Furthermore, by providing a resin layer on the surface of the lid, wiring board, and joint that appears on the outer surface of the device, the joint strength at the four corners of each device will increase, making it possible to further improve the airtightness. Further, by providing the resin layer, it is possible to improve the impact resistance strength when dropped.

因って、上記各作用により、小型で且つ諸特性が良好な圧電デバイス、及びこのような圧電デバイスの生産性が良い製造方法を提供できる効果を奏する。   Therefore, each of the above-described actions produces an effect that it is possible to provide a piezoelectric device that is small and has various characteristics, and a manufacturing method that has good productivity of such a piezoelectric device.

以下、本発明を添付図面に基づいて詳細に説明する。尚、各図においての同一の符号は同じ対象を示すものとする。尚、各図では、説明を明りょうにするため構造体の一部を図示せず、また寸法も一部誇張して図示している。   Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. In addition, the same code | symbol in each figure shall show the same object. In each of the drawings, a part of the structure is not shown, and some dimensions are exaggerated for the sake of clarity.

図1は、本発明における圧電デバイスを圧電デバイスの一つである水晶振動子を例に示した分解斜視図であり、図2は図1記載の水晶振動子を組み立てた場合の断面図である。同図に示す水晶振動子は、大略的に、配線基板1と、圧電振動素子としての水晶振動素子5と、蓋体8とで構成されている。   FIG. 1 is an exploded perspective view illustrating an example of a crystal resonator which is one of the piezoelectric devices of the piezoelectric device according to the present invention, and FIG. 2 is a cross-sectional view when the crystal resonator shown in FIG. 1 is assembled. . The crystal resonator shown in the figure is generally composed of a wiring substrate 1, a crystal resonator element 5 as a piezoelectric resonator element, and a lid 8.

配線基板1は、例えば、ガラス−セラミック、アルミナセラミックス等のセラミック材料による層を積層して形成されており、その一方の主面(便宜上表とする)上には、一対の素子接続用電極パッド2が設けられており、また他方の主面(便宜上裏とする)には入力端子、出力端子、グランド端子等の外部接続用電極端子3が設けられている。   The wiring substrate 1 is formed by laminating layers made of a ceramic material such as glass-ceramic and alumina ceramic, for example, and a pair of element connection electrode pads on one main surface (for convenience). 2 is provided, and an electrode terminal 3 for external connection such as an input terminal, an output terminal, and a ground terminal is provided on the other main surface (for the sake of convenience).

かかる配線基板1の一方の主面上に設けられている一対の素子接続用電極パッド2は、素子接続用電極パッド2の上面側で後述する水晶振動素子5の励振電極6に導電性接着材を介して電気的に接続され、下面側で配線基板1上の導体パターンや配線基板内部のビア導体等を介して配線基板1の他方の主面に形成された外部接続用電極端子3のうちの入出力端子(入力端子、出力端子)に電気的に接続される。 尚、これら外部接続用電極端子3は、水晶振動子をマザーボード等の外部電気回路網に搭載する際、外部電気回路網の回路配線と半田等の導電性を有する接合材を介して電気的に接続される。   A pair of element connection electrode pads 2 provided on one main surface of the wiring substrate 1 are electrically conductive adhesives to excitation electrodes 6 of a crystal resonator element 5 described later on the upper surface side of the element connection electrode pads 2. Of the external connection electrode terminals 3 formed on the other main surface of the wiring board 1 via the conductor pattern on the wiring board 1 and via conductors inside the wiring board on the lower surface side. Are electrically connected to the input / output terminals (input terminal, output terminal). These external connection electrode terminals 3 are electrically connected to the external electric circuit network such as a mother board through a circuit material of the external electric circuit network and a conductive bonding material such as solder when the crystal unit is mounted on the external electric circuit network. Connected.

また、配線基板1の側面には配線基板1の一方の主面に向かって凸の段差部11が設けられ、この段差部11の配線基板1の一方の主面側の側面には、配線基板1本体と後述する接合材9と固着するための導体層4とが設けられている。導体層4はWもしくはMoから成る基層の表面にNi層及びAu層を順次被着させた構成である。   Further, a stepped portion 11 that is convex toward one main surface of the wiring substrate 1 is provided on the side surface of the wiring substrate 1, and the wiring substrate 1 is provided on a side surface of the stepped portion 11 on the one main surface side of the wiring substrate 1. One main body, a bonding material 9 to be described later, and a conductor layer 4 for fixing are provided. The conductor layer 4 has a structure in which a Ni layer and an Au layer are sequentially deposited on the surface of a base layer made of W or Mo.

導体層4の表面には接合材9が形成されており、接合材9は蓋体8を配線基板1に接合するためのろう材として機能するものである。接合材9の材料には金と錫との合金が使用され、金錫の組成比率は、例えば、金80%、錫20%に設定され、その厚みは、概略10μm〜40μmに設定される。   A bonding material 9 is formed on the surface of the conductor layer 4, and the bonding material 9 functions as a brazing material for bonding the lid 8 to the wiring substrate 1. An alloy of gold and tin is used as the material of the bonding material 9. The composition ratio of gold and tin is set to, for example, 80% gold and 20% tin, and the thickness is set to approximately 10 μm to 40 μm.

上述した配線基板1の一方の主面に形成した素子接続用電極パッド2には水晶振動素子5が搭載される。水晶振動素子5は、所定の結晶軸で人工水晶体よりカットし外形加工を施した水晶素板の両主面に一対の励振電極6を被着・形成してなり、外部からの変動電圧が一対の励振電極6を介して水晶素板に印加されると、所定の周波数で各種振動モードの振動を起こす。この水晶振動素子5は、その両主面に被着されている励振電極6と配線基板1の一方の主面の素子接続用電極パッド2とを導電性接着材を介して電気的・機械的に接続することによって配線基板1の一方の主面上に搭載される。   A crystal resonator element 5 is mounted on the element connection electrode pad 2 formed on one main surface of the wiring board 1 described above. The quartz resonator element 5 is formed by attaching and forming a pair of excitation electrodes 6 on both main surfaces of a quartz base plate that is cut from an artificial crystalline lens with a predetermined crystal axis and is subjected to external shape processing. When applied to the quartz base plate via the excitation electrode 6, vibrations of various vibration modes are generated at a predetermined frequency. The quartz resonator element 5 is electrically and mechanically connected to the excitation electrode 6 attached to both main surfaces thereof and the element connecting electrode pad 2 on one main surface of the wiring board 1 through a conductive adhesive. It is mounted on one main surface of the wiring board 1 by being connected to.

蓋体8は、概略開口した箱のような外形をしており、その開口部形状は配線基板1に形成した段差部11の側面外周形状(接合材9を含む)と同じである。この蓋体8の開口部内に配線基板1を、配線基板1の側面に形成されている段差部11の一方の主面側側面が蓋体8の内部表面に対する形態で嵌合し、配線基板1の側面周囲に形成されている接合材9と、蓋体8の側壁内面とを密着して接合することにより、配線基板1の一方の主面上に搭載された水晶振動素子5を気密に封止している。この段差部11に蓋体8の開口部を填め合わせることによって、蓋体8を配線基板1に配置する際に、蓋体8の配置位置決めを容易にすることが可能となる。   The lid body 8 has an outline like a box having a generally open shape, and the shape of the opening is the same as the outer peripheral shape of the side surface of the step portion 11 formed on the wiring board 1 (including the bonding material 9). The wiring board 1 is fitted into the opening of the lid 8 in such a manner that one main surface side surface of the step portion 11 formed on the side surface of the wiring board 1 is fitted to the inner surface of the lid body 8. The crystal resonator element 5 mounted on one main surface of the wiring board 1 is hermetically sealed by closely bonding and bonding the bonding material 9 formed around the side surface of the lid 8 and the inner surface of the side wall of the lid 8. It has stopped. By fitting the opening portion of the lid body 8 to the stepped portion 11, the positioning of the lid body 8 can be facilitated when the lid body 8 is disposed on the wiring board 1.

又、蓋体8は先に述べた導体層4及び配線基板1内に形成したビア導体や導配線を介して配線基板1の他方の主面に形成された外部接続用電極端子のうちのGND端子に電気的に接続される。よって、水晶振動子の使用時、蓋体8はグランド電位に保持されることとなり、水晶振動素子5が蓋体8のシールド効果によって外部からの不要な電気的作用、例えばノイズ等から良好に保護される。   Further, the lid 8 is the GND of the electrode layers for external connection formed on the other main surface of the wiring board 1 through the conductor layer 4 and the via conductors and conductive wirings formed in the wiring board 1 described above. Electrically connected to the terminal. Therefore, when the crystal unit is used, the lid 8 is held at the ground potential, and the quartz resonator element 5 is well protected from unnecessary external electrical action such as noise due to the shielding effect of the lid 8. Is done.

尚、本実施例における水晶振動子の他の実施形態としては、図3に図示したように、配線基板1の一方の主面側の各辺縁部に、一方の主面の表面から配線基板1の厚み方向に深さ成分を有する溝部12を形成しておくと、仮に蓋体8の接合の際に接合材9が配線基板1の一方の主面上に流入してきた場合でも、流入した接合材は溝部12により更に配線基板1の内側に流入することを防止することができるので、水晶振動素子5に接合材が付着することがなく、安定した振動特性を得ることが可能となる。   As another embodiment of the crystal unit of the present embodiment, as shown in FIG. 3, the wiring board 1 is connected to each edge portion on one main surface side of the wiring board 1 from the surface of the one main surface. If the groove portion 12 having a depth component in the thickness direction 1 is formed, even if the bonding material 9 flows into one main surface of the wiring board 1 when the lid body 8 is bonded, it flows in. Since the bonding material can be further prevented from flowing into the inside of the wiring substrate 1 by the groove portion 12, the bonding material does not adhere to the crystal resonator element 5, and stable vibration characteristics can be obtained.

又、図4に示すように、段差部11に蓋体8の開口側側壁端部を配置し、蓋体8と段差部11に形成した接合材9を接合すると共に、デバイス外面に表れている蓋体8と配線基板1と接合部の表面に樹脂層14が設けられている。この樹脂層14を設けることにより気密性を更に向上させることが可能となる。特にデバイスの4つの角部では蓋体8と接合材9との間に僅かな隙間が生じる可能性があるため、この樹脂層14を設けることは気密性の更なる向上に有効である。この樹脂層14はエポキシ系の樹脂で形成されており、流動性が低いものが望ましい。   Further, as shown in FIG. 4, the opening side wall end portion of the lid body 8 is arranged at the step portion 11, and the bonding material 9 formed on the lid body 8 and the step portion 11 is joined and also appears on the outer surface of the device. A resin layer 14 is provided on the surface of the lid 8, the wiring substrate 1, and the joint. By providing this resin layer 14, the airtightness can be further improved. In particular, since there may be a slight gap between the lid 8 and the bonding material 9 at the four corners of the device, the provision of the resin layer 14 is effective for further improving the airtightness. The resin layer 14 is formed of an epoxy resin and preferably has low fluidity.

更に又、図5に示すように、配線基板1を構成する複数の層のうち、配線基板1の一方の主面側最外層を除き各段差部の一方の主面側側面を構成する中間層の側面にのみ導体層4及び接合材9を形成した形態によっても、配線基板1の一方の主面側最外層上に配置した水晶振動素子5に接合材9が飛散付着することを防止することが可能となる。   Further, as shown in FIG. 5, among the plurality of layers constituting the wiring board 1, an intermediate layer constituting one main surface side surface of each step portion except for one main surface side outermost layer of the wiring board 1. Even when the conductor layer 4 and the bonding material 9 are formed only on the side surfaces of the wiring board 1, the bonding material 9 is prevented from being scattered and attached to the crystal resonator element 5 disposed on the outermost layer on one main surface side of the wiring board 1. Is possible.

かくして上述した水晶振動子は、配線基板1の他方の主面に設けられる外部接続用電極端子2のうちの入出力端子を介して水晶振動素子5の表裏励振電極間に外部からの変動電圧を印加し、水晶振動素子5の特性に応じた所定の周波数で振動を起こさせることによって水晶振動子として機能し、かかる水晶振動子の共振周波数に基づいて外部の発振回路で所定周波数の基準信号が発振・出力される。そして、このような基準信号は携帯用通信機器等の電子機器におけるクロック信号として利用されることとなる。   Thus, the above-described crystal resonator has an externally varying voltage between the front and back excitation electrodes of the crystal resonator element 5 via the input / output terminals of the external connection electrode terminals 2 provided on the other main surface of the wiring board 1. By applying and causing vibration at a predetermined frequency according to the characteristics of the crystal resonator element 5, it functions as a crystal resonator. Based on the resonance frequency of the crystal resonator, a reference signal having a predetermined frequency is generated by an external oscillation circuit. Oscillates / outputs. Such a reference signal is used as a clock signal in an electronic device such as a portable communication device.

次に上述した水晶振動子の製造方法について、各工程を図6から図8を用いて説明する。
(工程A)
まず、図5に示す如く、マトリクス状に配列された複数個の配線基板領域を有すマスター基板10を準備し、マスター基板10の各配線基板領域の一方の主面上に形成した素子接続用電極パッド2上に水晶振動素子5を搭載する。
Next, with reference to FIGS. 6 to 8, each step of the above-described method for manufacturing a crystal resonator will be described.
(Process A)
First, as shown in FIG. 5, a master substrate 10 having a plurality of wiring board regions arranged in a matrix is prepared, and for element connection formed on one main surface of each wiring board region of the master substrate 10. A crystal resonator element 5 is mounted on the electrode pad 2.

マスター基板10は、例えば、ガラス−セラミック、アルミナセラミックス等のセラミック材料からなる矩形状の平板状基板が2積層され、そこに縦m列×横n行(m,nは2以上の自然数。)のマトリクス形態で外周形状が矩形の複数個の配線基板領域を設定する。この各配線基板領域上に、各配線基板領域と外周形状が相似で且つ外周寸法が配線基板領域外周より小さい平板状基板を積層配置し、各配線基板領域の外周縁部に段差部11を形成する。このマトリクス状に設定された個々の配線基板領域には、その一方の主面上には前述した一対の素子接続用電極パッド2と、各配線基板領域を囲む段差部11の一方の主面側側面には導体層4を被着・形成する。又、各配線基板領域の他方の主面には入出力端子やグランド端子等となる外部接続用電極端子3が形成されている。   The master substrate 10 includes, for example, two rectangular flat substrates made of a ceramic material such as glass-ceramic and alumina ceramic, and has m columns × n rows (m and n are natural numbers of 2 or more). In this matrix form, a plurality of wiring board regions having a rectangular outer peripheral shape are set. On each wiring board area, a flat board having a similar outer peripheral shape to each wiring board area and having a smaller outer peripheral dimension than the outer circumference of the wiring board area is laminated, and a step 11 is formed at the outer peripheral edge of each wiring board area. To do. Each wiring board region set in a matrix form has a pair of element connecting electrode pads 2 on one main surface and one main surface side of a step portion 11 surrounding each wiring board region. A conductor layer 4 is deposited and formed on the side surface. In addition, external connection electrode terminals 3 serving as input / output terminals and ground terminals are formed on the other main surface of each wiring board region.

このようなマスター基板10を構成する各層は、例えば、アルミナセラミックス等から成るセラミック材料粉末に適当な有機溶剤等を添加・混合して得たセラミックグリーンシートの表面等に素子接続用電極パッド2や外部接続用電極端子3、各配線基板領域に設けられる導体パターン等となる導体ペーストを所定パターンに印刷・塗布するとともに、これを必要枚数積層してプレス成形した後、高温で焼成することによって製作される。   Each layer constituting such a master substrate 10 includes, for example, an element connection electrode pad 2 or the like on the surface of a ceramic green sheet obtained by adding and mixing a suitable organic solvent to a ceramic material powder made of alumina ceramic or the like. Produced by printing / coating a predetermined pattern of conductor paste, which is a conductor pattern, etc., provided on the external connection electrode terminal 3 and each wiring board region, and then laminating the required number of sheets, press-molding, and firing at a high temperature Is done.

又、各配線基板領域の外周縁部に形成した段差部11の一方の主面側側面に形成した導体層4は、WもしくはMoの表面にNi層及びAu層を順次被着して形成し、その導体層4の表面には、金錫(Au−Sn)からなる接合材9が被着形成されている。この接合材9は蓋体8を配線基板1に対して接合するためのろう材として機能するものであり、金錫の組成比率は、約金80%、錫20%であり、その厚みは概略10μm〜30μmで形成される。   Further, the conductor layer 4 formed on one main surface side surface of the step portion 11 formed at the outer peripheral edge of each wiring board region is formed by sequentially depositing a Ni layer and an Au layer on the surface of W or Mo. The bonding material 9 made of gold tin (Au—Sn) is deposited on the surface of the conductor layer 4. This bonding material 9 functions as a brazing material for bonding the lid body 8 to the wiring board 1. The composition ratio of gold tin is approximately 80% gold and 20% tin, and the thickness is approximately. It is formed with a thickness of 10 μm to 30 μm.

また、このように形成したマスター基板10の各配線基板領域上には水晶振動素子5が搭載され、水晶振動素子5の励振電極6と各配線基板領域内の一方の主面上の素子接続用電極パッド2とが導電性接着剤7を介して電気的・機械的に接続される。   In addition, the crystal resonator element 5 is mounted on each wiring board region of the master substrate 10 formed in this way, and the element is connected to the excitation electrode 6 of the crystal resonator element 5 and one main surface in each wiring substrate region. The electrode pad 2 is electrically and mechanically connected via the conductive adhesive 7.

更に、本発明の他の実施形態として、マスター基板10を構成する各配線基板領域の一方の主面の外周近傍に、囲繞形態で且つ各配線基板領域の一方の主面表面から配線基板領域の厚み方向に深さ成分を有する溝部12を設けることにより、後述する工程で蓋体8と接合材9を接合する際に、接合材9が流れ出しても、溝12で塞き止められ、前記水晶振動素子5に接合材9が付着することがないので、安定した発振特性を得ることが可能となる。   Furthermore, as another embodiment of the present invention, in the vicinity of the outer periphery of one main surface of each wiring board region constituting the master substrate 10, the wiring board region is formed in a surrounding form from one main surface of each wiring substrate region. By providing the groove portion 12 having a depth component in the thickness direction, even when the bonding material 9 flows out when the lid body 8 and the bonding material 9 are bonded in a process described later, the quartz crystal is blocked by the groove 12. Since the bonding material 9 does not adhere to the vibration element 5, stable oscillation characteristics can be obtained.

(工程B)
次に、図6に示す如く、外形形状が概略箱状であり且つ開口部の形状が各配線基板領域に形成した段差部11の一方の主面側側面外周形状(接合材9を含む)と同じ蓋体8を、マスター基板10の各配線基板領域の一方の主面上に、段差部11に蓋体8の開口部が填め合うように配置し、この蓋体8の側壁部内面と接合材9とを接合し、各配線基板領域の一方の主面上に搭載されている水晶振動素子5を気密に封止する。
(Process B)
Next, as shown in FIG. 6, the outer peripheral shape is substantially box-shaped and the shape of the opening is one main surface side side outer peripheral shape (including the bonding material 9) of the step portion 11 formed in each wiring board region. The same lid 8 is arranged on one main surface of each wiring board region of the master substrate 10 so that the opening of the lid 8 fits into the stepped portion 11, and is joined to the inner surface of the side wall of the lid 8. The material 9 is joined, and the crystal resonator element 5 mounted on one main surface of each wiring board region is hermetically sealed.

蓋体8は、例えば、42アロイやコバール,リン青銅等の金属から成る、厚み60μm〜100μmの金属板を従来周知の板金加工にて所定形状に加工することによって製作される。蓋体8は板状の金属を箱状にプレス加工し、蓋体8の内側面には、ニッケル(Ni)層を形成する。   The lid 8 is manufactured by processing a metal plate having a thickness of 60 μm to 100 μm made of a metal such as 42 alloy, Kovar, or phosphor bronze into a predetermined shape by a conventionally known sheet metal processing. The lid 8 is formed by pressing a plate-like metal into a box shape, and a nickel (Ni) layer is formed on the inner surface of the lid 8.

このような形態の蓋体8を、対応する各配線基板領域上の水晶振動素子5を覆うようにしてマスター基板10の各配線基板領域の外周縁部に形成された段差部11に載置させ、しかる後、300℃〜350℃の温度に保たれた加熱炉の中に入れ、段差部11に形成した接合材9を高温で加熱・溶融させることによって蓋体8が各配線基板領域の段差部11に接合される。その後、一体化されたマスター基板10と複数の蓋体8は徐々に室温まで冷却される。尚、上述した一連の接合工程は、窒素ガスやアルゴンガス等の不活性ガス雰囲気中、若しくは真空中で行うのが好ましく、これによって水晶振動素子5が収納される内部空間には不活性ガスが充満又は真空になるため、水晶振動素子5が酸素や大気中の水分等によって腐食・劣化するのを有効に防止することができる。   The lid body 8 having such a configuration is placed on the step portion 11 formed on the outer peripheral edge portion of each wiring board region of the master substrate 10 so as to cover the crystal resonator element 5 on each corresponding wiring board region. Thereafter, the lid 8 is placed in a heating furnace maintained at a temperature of 300 ° C. to 350 ° C., and the bonding body 9 formed on the step portion 11 is heated and melted at a high temperature so that the lid body 8 is stepped in each wiring board region. It is joined to the part 11. Thereafter, the integrated master substrate 10 and the plurality of lids 8 are gradually cooled to room temperature. The series of joining steps described above is preferably performed in an inert gas atmosphere such as nitrogen gas or argon gas, or in a vacuum, whereby an inert gas is contained in the internal space in which the crystal resonator element 5 is accommodated. Since the liquid crystal is filled or evacuated, it is possible to effectively prevent the quartz resonator element 5 from being corroded or deteriorated by oxygen, moisture in the atmosphere, or the like.

(工程C)
そして最後に、図7に示す如く、工程Bにおいて蓋体8を各配線基板領域に接合したマスター基板10を、各配線基板領域の外周に沿って一括的に切断し、個々の水晶振動子を得る。マスター基板10の切断は、例えば、ダイサー等を用いてマスター基板10をマスター基板側から一括的に切断することによって行われ、これによって複数個の水晶振動子が同時に得られる。図4に示すように、マスター基板を切断後、個々の水晶振動子を形成した後で、水晶振動子外面に表れている蓋体8と配線基板1と接合部の表面にエポキシ系樹脂からなる樹脂層14をディスペンサにより塗布し、熱をかけることによって硬化させる。このことにより接合部強度を高め、気密性を更に向上させることが可能となる。
(Process C)
Finally, as shown in FIG. 7, in step B, the master substrate 10 in which the lid 8 is bonded to each wiring board region is collectively cut along the outer periphery of each wiring board region, and individual crystal resonators are separated. obtain. The master substrate 10 is cut by, for example, collectively cutting the master substrate 10 from the master substrate side using a dicer or the like, whereby a plurality of crystal resonators are obtained simultaneously. As shown in FIG. 4, after the master substrate is cut and individual crystal resonators are formed, the lid 8 and the wiring substrate 1 appearing on the outer surface of the crystal resonator and the surface of the bonding portion are made of epoxy resin. The resin layer 14 is applied by a dispenser and cured by applying heat. This can increase the joint strength and further improve the airtightness.

しかもこの場合、水晶振動子の組み立てに際して、マスター基板10そのものがキャリアとして機能するようになっていることから、個片化した配線基板を個々にキャリアに保持して水晶振動子を組み立てるといった煩雑な作業は一切不要となり、これにより水晶振動子の組み立て工程が大幅に簡素化されるようになり、水晶振動子の生産性向上に供することが可能となる。   In addition, in this case, since the master substrate 10 itself functions as a carrier when assembling the crystal resonator, it is complicated to assemble the crystal resonator by individually holding the separated wiring substrates on the carrier. No work is required, which greatly simplifies the process of assembling the crystal unit, which can improve the productivity of the crystal unit.

以下は、本発明に係る他の実施例として圧電デバイスの一つである水晶発振器の形態について説明をする。図9〜図13に示す水晶発振器は、大略的に、配線基板51と、圧電振動素子としての水晶振動素子56及び発振回路を内蔵した集積回路素子55と、蓋体58とで構成されている。図9において、配線基板51は、例えば、ガラスーセラミツク、アルミナセラミツクス等のセラミツク材料によるセラミックグリーンシートを積層することによって形成されており、一方の主面側には、一対の素子接続用電極パッド52が設けられており、また他方の主面側には電源電圧端子、グランド端子、発振出力端子、発振制御端子の外部接続用電極端子53が設けられている。配線基板51の一方の主面の概略中央には、凹部60が形成されており、この凹部60は、配線基板51を構成する複数枚のセラミックグリーンシートのうち、一方の主面側に配されるセラミツクグリーンシートの中央部等に矩形状の貫通孔を穿設しておくことにより形成される。   In the following, a form of a crystal oscillator which is one of piezoelectric devices will be described as another embodiment according to the present invention. The crystal oscillator shown in FIGS. 9 to 13 is generally composed of a wiring board 51, a crystal vibration element 56 as a piezoelectric vibration element, an integrated circuit element 55 incorporating an oscillation circuit, and a lid 58. . In FIG. 9, a wiring substrate 51 is formed by laminating ceramic green sheets made of a ceramic material such as glass-ceramic or alumina ceramic, and a pair of element connecting electrode pads is provided on one main surface side. 52, and a power supply voltage terminal, a ground terminal, an oscillation output terminal, and an external connection electrode terminal 53 for an oscillation control terminal are provided on the other main surface side. A concave portion 60 is formed at the approximate center of one main surface of the wiring substrate 51, and the concave portion 60 is disposed on one main surface side of the plurality of ceramic green sheets constituting the wiring substrate 51. It is formed by drilling a rectangular through hole in the center of the ceramic green sheet.

配線基板51の一方の主面側に設けられている一対の素子接続用電極パッド52は、その上面側で後述する水晶振動素子56の励振電極に導電性接着材57を介して電気的に接続され、下面側で配線基板51の一方の主面上の導体パターンや配線基板内部のビア導体等を介して配線基板51の他方の主面に形成された外部接続用電極端子53の発振出力端子に電気的に接続される。   A pair of element connection electrode pads 52 provided on one main surface side of the wiring board 51 are electrically connected to excitation electrodes of a crystal resonator element 56 described later on the upper surface side thereof via a conductive adhesive 57. The oscillation output terminal of the external connection electrode terminal 53 formed on the other main surface of the wiring board 51 via a conductor pattern on one main surface of the wiring board 51 or a via conductor inside the wiring board on the lower surface side. Is electrically connected.

又、配線基板51の側面には、配線基板51の一方の主面に向かって凸の段差部61が設けられ、この段差部61の配線基板51の一方の主面側の側面には、配線基板51本体と後述する接合材59と固着するための導体層54とが設けられている。導体層54は、WもしくはMoから成る基層の表面にNi層及びAu層を順次被着させた構成である。   Further, a stepped portion 61 that protrudes toward one main surface of the wiring substrate 51 is provided on the side surface of the wiring substrate 51, and the wiring portion 51 on the side surface on the one main surface side of the stepped portion 61 has a wiring A main body of the substrate 51 and a conductor layer 54 for fixing to a bonding material 59 described later are provided. The conductor layer 54 has a configuration in which a Ni layer and an Au layer are sequentially deposited on the surface of a base layer made of W or Mo.

この導体層54は、その露出面側で後述する蓋体58に接合材59を介して電気的に接続され、非露出面側で配線基板51内部のビア導体等を介して配線基板51の他方の主面に形成された外部背接続用電極端子53のうちの接地(GND)端子に電気的に接続される。導体層54は、後述する蓋体58を接合材59を介して配線基板51の側面に接合させるためのものであり、かかる導体層54は、WもしくはMoから成る基層の表面にNi層及びAu層を順次被着させた構成となっている。   The conductor layer 54 is electrically connected to a cover body 58 to be described later on the exposed surface side through a bonding material 59, and the other side of the wiring substrate 51 on the non-exposed surface side via a via conductor or the like inside the wiring substrate 51. Are electrically connected to the ground (GND) terminal of the external back connection electrode terminals 53 formed on the main surface. The conductor layer 54 is for bonding a lid body 58, which will be described later, to the side surface of the wiring board 51 via a bonding material 59. The conductor layer 54 is formed on the surface of a base layer made of W or Mo with a Ni layer and an Au layer. The layers are sequentially deposited.

接合材59は、蓋体58を配線基板51に対して接合するためのろう材として機能するものであり、本実施例2では接合材59の材料として金錫を使用している。金錫の組成比率は、例えば、金80%、錫20%に設定され、その厚みは、例えば、10μm〜30μmとする。   The bonding material 59 functions as a brazing material for bonding the lid body 58 to the wiring board 51. In the second embodiment, gold tin is used as the material of the bonding material 59. The composition ratio of gold tin is set to, for example, 80% gold and 20% tin, and the thickness thereof is, for example, 10 μm to 30 μm.

上述した配線基板51の一方の主面に形成した素子接続用電極パッド52には水晶振動素子56が搭載される。水晶振動素子56は、所定の結晶軸アングルで人工水晶体よりカットし外形加工を施した水晶素板の両主面に一対の励振電極を被着・形成してなり、外部からの変動電圧が一対の励振電極を介して水晶素板に印加されると、所定の周波数で各種振動モードの振動を起こす。この水晶振動素子56は、その両主面に被着されている励振電極と配線基板51の一方の主面の素子接続用電極パッド52とを導電性接着材57を介して電気的・機械的に接続することによって配線基板51の一方の主面上に搭載される。   A crystal resonator element 56 is mounted on the element connection electrode pad 52 formed on one main surface of the wiring substrate 51 described above. The quartz resonator element 56 is formed by attaching and forming a pair of excitation electrodes on both main surfaces of a quartz base plate that is cut from an artificial crystalline lens at a predetermined crystal axis angle and is subjected to external shape processing. When applied to the quartz base plate via the excitation electrode, vibrations of various vibration modes are generated at a predetermined frequency. The quartz-crystal vibrating element 56 is electrically and mechanically connected to an excitation electrode attached to both main surfaces thereof and an element connecting electrode pad 52 on one main surface of the wiring board 51 through a conductive adhesive 57. Is mounted on one main surface of the wiring substrate 51.

そして、上述した配線基板51の凹部60内には、水晶振動素子56と電気的に接続した発振回路を含む電子回路網を内蔵した集積回路素子55が搭載されている。集積回路素子55としては、例えば、配線基板51との実装側面に複数個の接続端子を有したフリップチップ型の集積回路素子55が用いられ、この集積回路素子55には、その回路形成面に、周囲の温度状態を検知する感温素子(サーミスタ)、水晶振動素子56の周波数温度特性を補償する温度補償データを格納し、温度補償データに基づいて水晶振動素子56の振動特性を温度変化に応じて補正する温度補償回路や、この温度補償回路に接続されて所定の発振出力を生成する発振回路等が設けられており、発振回路で生成された発振出力は、デバイス外部に出力された後、例えば、クロック信号等の基準信号として利用される。   An integrated circuit element 55 including an electronic circuit network including an oscillation circuit electrically connected to the crystal resonator element 56 is mounted in the recess 60 of the wiring board 51 described above. As the integrated circuit element 55, for example, a flip chip type integrated circuit element 55 having a plurality of connection terminals on the mounting side surface with the wiring substrate 51 is used. , A temperature sensing element (thermistor) for detecting the ambient temperature state, temperature compensation data for compensating the frequency temperature characteristic of the crystal vibrating element 56 are stored, and the vibration characteristic of the crystal vibrating element 56 is changed in temperature based on the temperature compensation data. There is provided a temperature compensation circuit that corrects it accordingly, an oscillation circuit that is connected to this temperature compensation circuit and generates a predetermined oscillation output, etc., and the oscillation output generated by the oscillation circuit is output to the outside of the device For example, it is used as a reference signal such as a clock signal.

また集積回路素子55の実装側面に設けられる複数個の接続端子は、配線基板51の凹部60内底面に設けた素子接続用電極端子と1対1に対応するように配置されており、これらの接続端子を対応する素子接続用電極端子に対して、Au、Au−Sn合金又は半田等のバンプ或いは導電性接着剤等の導電性接合材を介して個々に接合させることによって集積回路素子55が配線基板51に取着され、これと同時に集積回路素子55の接続端子が外部接続用電極端子53に電気的に接続される。また同時に、水晶振動素子56の励振電極が集積回路素子55の接続端子に電気的に接続される。   The plurality of connection terminals provided on the mounting side surface of the integrated circuit element 55 are disposed so as to correspond to the element connection electrode terminals provided on the inner bottom surface of the recess 60 of the wiring board 51, and these The integrated circuit element 55 is formed by individually bonding the connection terminal to the corresponding element connection electrode terminal via a bump such as Au, Au—Sn alloy or solder, or a conductive bonding material such as a conductive adhesive. At the same time, the connection terminal of the integrated circuit element 55 is electrically connected to the external connection electrode terminal 53. At the same time, the excitation electrode of the crystal resonator element 56 is electrically connected to the connection terminal of the integrated circuit element 55.

蓋体58は、概略開口した箱のような外形をしており、その開口部形状及びサイズは、配線基板51に形成した段差部61の側面外周形状(接合材59を含む)及びサイズと同じである。この蓋体58の開口部内に配線基板51を、配線基板51の側面に形成されている段差部61の一方の主面側側面が蓋体58の内部表面に対する形態で嵌合し、配線基板51の側面周囲に形成されている接合材59と、蓋体58の側壁内面とを密着して接合することにより、配線基板51の一方の主面上に搭載された水晶振動素子56及び集積回路素子55を気密に封止している。この段差部61に蓋体58の開口部を嵌合させることによって、蓋体58を配線基板51に配置する際に、蓋体58の配置位置決めを容易にすることが可能となる。   The lid body 58 has an outline like a box having a substantially open shape, and the shape and size of the opening are the same as the outer peripheral shape (including the bonding material 59) and size of the stepped portion 61 formed on the wiring board 51. It is. The wiring board 51 is fitted into the opening of the lid 58 in such a manner that one main surface side surface of the stepped portion 61 formed on the side surface of the wiring board 51 is fitted to the inner surface of the lid body 58. The crystal resonator element 56 and the integrated circuit element mounted on one main surface of the wiring substrate 51 by closely bonding and bonding the bonding material 59 formed around the side surface of the lid body 58 and the inner surface of the side wall of the lid body 58. 55 is hermetically sealed. By fitting the opening of the lid body 58 into the stepped portion 61, the positioning of the lid body 58 can be facilitated when the lid body 58 is disposed on the wiring board 51.

又、蓋体58は、先に述べた導体層54を介して配線基板51の他方の主面に形成された外部接続用電極端子53のうちのGND端子に電気的に接続される。因って、水晶発振器の使用時、蓋体58はグランド電位に保持されることとなり、水晶振動素子56及び集積回路素子55が蓋体58のシールド効果によって外部からの不要な電気的作用、例えばノイズ等から良好に保護される。   The lid 58 is electrically connected to the GND terminal of the external connection electrode terminals 53 formed on the other main surface of the wiring board 51 through the conductor layer 54 described above. Therefore, when the crystal oscillator is used, the lid body 58 is held at the ground potential, and the quartz resonator element 56 and the integrated circuit element 55 are caused to have an unnecessary electric action from the outside due to the shielding effect of the lid body 58, for example, Good protection from noise, etc.

尚、本実施例における水晶発振器の他の実施形態としては、図10に図示したように、配線基板51の一方の主面側の各辺縁部に、一方の主面の表面から配線基板51の厚み方向に深さ成分を有する溝部62を形成しておくと、仮に蓋体58の接合の際に接合材59が配線基板51の一方の主面上に流入してきた場合でも、流入した接合材は溝部62により更に配線基板51の内側に流入することを防止することができるので、水晶振動素子56や集積回路素子55に接合材が付着することがなく、安定した振動特性を得ることが可能となる。   As another embodiment of the crystal oscillator according to the present embodiment, as shown in FIG. 10, the wiring board 51 extends from the surface of one main surface to each edge portion on the one main surface side of the wiring board 51. If the groove portion 62 having a depth component is formed in the thickness direction, even if the bonding material 59 flows into one main surface of the wiring board 51 during the bonding of the lid body 58, the flow-in bonding Since the material can be further prevented from flowing into the inside of the wiring substrate 51 by the groove 62, the bonding material does not adhere to the crystal vibration element 56 and the integrated circuit element 55, and stable vibration characteristics can be obtained. It becomes possible.

又、図11に示すように、段差部61に蓋体8の開口側側壁端部を配置し、蓋体58と段差部61に形成した接合材59を接合すると共に、デバイス外面に表れている蓋体58と配線基板51と接合部の表面に樹脂層64が設けられている。この樹脂層64を設けることにより気密性を更に向上させることが可能となる。特にデバイスの4つの角部では蓋体58と接合材59との間に僅かな隙間が生じる可能性があるため、この樹脂層64を設けることは気密性の更なる向上に有効である。この樹脂層64はエポキシ系の樹脂で形成されており、流動性が低いものが望ましい。   Further, as shown in FIG. 11, the opening side wall end portion of the lid body 8 is disposed in the step portion 61, the bonding material 59 formed on the lid body 58 and the step portion 61 is joined, and it appears on the outer surface of the device. A resin layer 64 is provided on the surface of the lid 58, the wiring substrate 51, and the joint. By providing the resin layer 64, the airtightness can be further improved. In particular, since there may be a slight gap between the lid 58 and the bonding material 59 at the four corners of the device, the provision of the resin layer 64 is effective for further improving the airtightness. The resin layer 64 is formed of an epoxy resin and desirably has low fluidity.

更に、図12に示すように、配線基板51を構成する複数の層のうち、配線基板51の一方の主面側最外層を除き各段差部の一方の主面側側面を構成する中間層の側面にのみ導体層54及び接合材59を形成した形態によっても、配線基板51の一方の主面側最外層上に配置した水晶振動素子56及び集積回路素子55に接合材59が飛散付着することを防止することが可能となる。   Further, as shown in FIG. 12, among the plurality of layers constituting the wiring board 51, the intermediate layer constituting one main surface side surface of each stepped portion except for one main surface side outermost layer of the wiring board 51. Even in a form in which the conductor layer 54 and the bonding material 59 are formed only on the side surfaces, the bonding material 59 is scattered and attached to the crystal resonator element 56 and the integrated circuit element 55 disposed on the outermost layer on one main surface side of the wiring substrate 51. Can be prevented.

更に又、集積回路素子55自体は、その使用環境として気密された空間を必要としていないので、図13のように、蓋体58で封じされていない配線基板51の他方の主面に開口した凹部60bを形成し、その凹部60bに集積回路素子55を配置し、対応する各端子間等を機械的及び電気的に接続する形態の水晶発振器においても、本発明は有効である。   Furthermore, since the integrated circuit element 55 itself does not require an airtight space as its use environment, as shown in FIG. 13, a concave portion opened on the other main surface of the wiring board 51 not sealed by the lid 58. The present invention is also effective in a crystal oscillator in which 60b is formed, the integrated circuit element 55 is disposed in the recess 60b, and the corresponding terminals are mechanically and electrically connected.

次に上述した水晶発振器の製造方法について、各工程を図14から図16を用いて説明する。
(工程A)
まず、図14に示す如く、マトリクス状に配列された複数個の配線基板51領域を有すマスター基板70を準備し、マスター基板70の各配線基板領域の一方の主面上に形成した凹部60内に各々集積回路素子55を搭載し、その後、素子接続用電極パッド52上に水晶振動素子56を搭載する。
Next, in the method for manufacturing the crystal oscillator described above, each step will be described with reference to FIGS.
(Process A)
First, as shown in FIG. 14, a master substrate 70 having a plurality of wiring substrate 51 regions arranged in a matrix is prepared, and a recess 60 formed on one main surface of each wiring substrate region of the master substrate 70 is prepared. Each of the integrated circuit elements 55 is mounted therein, and thereafter, the crystal vibration element 56 is mounted on the element connection electrode pad 52.

マスター基板70は、例えば、ガラス−セラミック、アルミナセラミックス等のセラミック材料からなる矩形状の平板状基板が少なくとも2層積層され、そこに縦m列×横n行(m,nは2以上の自然数。)のマトリクス形態で外周形状が矩形の複数個の配線基板51領域を設定する。この各配線基板51領域上に、各配線基板領域と外周形状が相似で且つ外周寸法が配線基板領域外周より小さい平板状基板を積層配置し、各配線基板51領域の外周縁部に段差部61を形成する。このマトリクス状に設定された個々の配線基板51領域には、その一方の主面上には前述した一対の素子接続用電極パッド52、凹部60及び各配線基板領域を囲む段差部61の一方の主面側側面には導体層54を形成する。又、各配線基板51領域の他方の主面には入出力端子やグランド端子等となる外部接続用電極端子53が形成されている。   The master substrate 70 includes, for example, at least two layers of rectangular flat plate substrates made of a ceramic material such as glass-ceramic and alumina ceramic, and have m columns × n rows (m and n are natural numbers of 2 or more). A plurality of wiring board 51 areas having a rectangular outer peripheral shape in the matrix form of. On each wiring board 51 area, a flat board having a similar outer peripheral shape to each wiring board area and having an outer peripheral dimension smaller than the outer circumference of the wiring board area is laminated and a stepped portion 61 is formed on the outer peripheral edge of each wiring board 51 area. Form. Each of the wiring substrate 51 regions set in a matrix form has one of the above-described pair of element connection electrode pads 52, the recess 60 and the stepped portion 61 surrounding each wiring substrate region on one main surface. A conductor layer 54 is formed on the side surface on the main surface side. In addition, an external connection electrode terminal 53 serving as an input / output terminal or a ground terminal is formed on the other main surface of each wiring board 51 region.

このようなマスター基板70を構成する各層は、例えば、アルミナセラミックス等から成るセラミック材料粉末に適当な有機溶剤等を添加・混合して得たセラミックグリーンシートの表面等に凹部60、素子接続用電極パッド52、外部接続用電極端子53及び各配線基板領域に設けられる導体パターン等となる導体ペーストを所定パターンに印刷・塗布するとともに、これを必要枚数積層してプレス成形した後、高温で焼成することによって製作される。   Each layer constituting such a master substrate 70 has, for example, a recess 60, an electrode for electrode connection on the surface of a ceramic green sheet obtained by adding and mixing an appropriate organic solvent or the like to a ceramic material powder made of alumina ceramics or the like. A conductor paste to be a conductor pattern or the like provided on the pad 52, the external connection electrode terminal 53, and each wiring board region is printed and applied in a predetermined pattern, and the necessary number of layers are laminated and press-molded, and then fired at a high temperature. It is manufactured by.

又、各配線基板51領域の外周縁部に形成した段差部61の一方の主面側側面に形成した導体層54は、WもしくはMoの表面にNi層及びAu層を順次被着して形成し、その導体層54の表面には、金錫(Au−Sn)からなる接合材59が被着形成されている。この接合材59は蓋体58を配線基板51に対して接合するためのろう材として機能するものであり、金錫の組成比率は、約金80%、錫20%であり、その厚みは概略10μm〜30μmで形成される。   Further, the conductor layer 54 formed on one main surface side surface of the stepped portion 61 formed on the outer peripheral edge of each wiring board 51 region is formed by sequentially depositing a Ni layer and an Au layer on the surface of W or Mo. A bonding material 59 made of gold tin (Au—Sn) is deposited on the surface of the conductor layer 54. The bonding material 59 functions as a brazing material for bonding the lid body 58 to the wiring board 51. The composition ratio of gold-tin is approximately 80% gold and 20% tin, and the thickness is approximately. It is formed with a thickness of 10 μm to 30 μm.

また、このように形成したマスター基板70の各配線基板51領域に形成した凹部60の中には集積回路素子55が搭載され、且つ各配線基板51領域の一方の主面には水晶振動素子56が搭載され、水晶振動素子56の励振電極と、それに対応する集積回路素子55の接続端子とが、各配線基板51領域内の一方の主面上の素子接続用電極パッド52と導電性接着剤57を介して電気的に接続される。   An integrated circuit element 55 is mounted in the recess 60 formed in each wiring board 51 region of the master substrate 70 formed in this manner, and a crystal resonator element 56 is provided on one main surface of each wiring board 51 region. Is mounted, and the excitation electrode of the crystal resonator element 56 and the corresponding connection terminal of the integrated circuit element 55 are connected to the element connection electrode pad 52 on one main surface in each wiring board 51 region and the conductive adhesive. Electrical connection is made via 57.

更に、本発明の他の実施形態として、マスター基板70を構成する各配線基板領域の一方の主面の外周近傍に、囲繞形態で且つ各配線基板領域の一方の主面表面から配線基板領域の厚み方向に深さ成分を有する溝部62(図14には図示なし)を設けることにより、後述する工程で蓋体58と接合材59を接合する際に、接合材59が流れ出しても、溝62で塞き止められ、水晶振動素子56及び集積回路素子55に接合材59が付着することがないので、安定した発振特性を得ることが可能となる。   Furthermore, as another embodiment of the present invention, in the vicinity of the outer periphery of one main surface of each wiring board region constituting the master substrate 70, the wiring board region is formed in a surrounding form from one main surface of each wiring substrate region. By providing the groove portion 62 (not shown in FIG. 14) having a depth component in the thickness direction, even when the bonding material 59 flows out when the lid body 58 and the bonding material 59 are bonded in a process to be described later, the groove 62. Therefore, the bonding material 59 does not adhere to the crystal resonator element 56 and the integrated circuit element 55, so that stable oscillation characteristics can be obtained.

(工程B)
次に、図15に示す如く、外形形状が概略箱状であり且つ開口部の形状が各配線基板51領域に形成した段差部61の一方の主面側側面外周形状(接合材59を含む)と同じ蓋体58を、マスター基板70の各配線基板51領域の一方の主面上に、段差部61に蓋体58の開口部が嵌合するように配置し、この蓋体58の側壁部内面と接合材59とを接合し、各配線基板領域の一方の主面に搭載されている水晶振動素子56及び凹部60内の集積回路素子55を気密に封止する。
(Process B)
Next, as shown in FIG. 15, the outer peripheral shape is a substantially box shape, and the shape of the opening on one main surface side of the step portion 61 formed in each wiring board 51 region (including the bonding material 59). The same lid body 58 is disposed on one main surface of each wiring board 51 region of the master substrate 70 so that the opening portion of the lid body 58 is fitted to the stepped portion 61, and the side wall portion of the lid body 58 is arranged. The inner surface and the bonding material 59 are bonded, and the quartz crystal vibration element 56 mounted on one main surface of each wiring board region and the integrated circuit element 55 in the recess 60 are hermetically sealed.

蓋体58は、例えば、42アロイやコバール,リン青銅等の金属から成る、厚み60μm〜100μmの金属板を従来周知の板金加工にて所定形状に加工することによって製作される。蓋体58は板状の金属を箱状にプレス加工し、蓋体58の内側面には、ニッケル(Ni)層を形成する。   The lid body 58 is manufactured, for example, by processing a metal plate having a thickness of 60 μm to 100 μm made of a metal such as 42 alloy, Kovar, or phosphor bronze into a predetermined shape by a conventionally known sheet metal processing. The lid 58 is formed by pressing a plate-like metal into a box shape, and a nickel (Ni) layer is formed on the inner surface of the lid 58.

このような形態の蓋体58を、対応する各配線基板51領域上の水晶振動素子56及び凹部60内の集積回路素子55を覆うようにしてマスター基板70の各配線基板51領域の外周縁部に形成された段差部61に載置させ、しかる後、300℃〜350℃の温度に保たれた加熱炉の中に入れ、段差部61に形成した接合材59を高温で加熱・溶融させることによって蓋体58が各配線基板領域の段差部61に接合される。その後、一体化されたマスター基板70と複数の蓋体58は徐々に室温まで冷却される。尚、上述した一連の接合工程は、窒素ガスやアルゴンガス等の不活性ガス雰囲気中、若しくは真空中で行うのが好ましく、これによって水晶振動素子5が収納される内部空間には不活性ガスが充満又は真空になるため、水晶振動素子5が酸素や大気中の水分等によって腐食・劣化するのを有効に防止することができる。   The outer peripheral edge portion of each wiring board 51 region of the master substrate 70 is configured such that the lid body 58 having such a configuration covers the crystal vibration element 56 on the corresponding wiring substrate 51 region and the integrated circuit element 55 in the recess 60. And placed in a heating furnace maintained at a temperature of 300 ° C. to 350 ° C., and the joining material 59 formed on the step portion 61 is heated and melted at a high temperature. Thus, the lid body 58 is joined to the stepped portion 61 of each wiring board region. Thereafter, the integrated master substrate 70 and the plurality of lids 58 are gradually cooled to room temperature. The series of joining steps described above is preferably performed in an inert gas atmosphere such as nitrogen gas or argon gas, or in a vacuum, whereby an inert gas is contained in the internal space in which the crystal resonator element 5 is accommodated. Since the liquid crystal is filled or evacuated, it is possible to effectively prevent the quartz resonator element 5 from being corroded or deteriorated by oxygen, moisture in the atmosphere, or the like.

(工程C)
そして最後に、図16に示す如く、工程Bにおいて蓋体58を各配線基板51領域に接合したマスター基板70を、各配線基板51領域の外周に沿って一括的に切断し、個々の水晶発振器を得る。マスター基板70の切断は、例えば、ダイサー等を用いてマスター基板70をマスター基板側から一括的に切断することによって行われ、これによって複数個の水晶発振器が同時に得られる。図11に示すように、マスター基板を切断後、個々の水晶発振器を形成した後で、水晶発振器外面に表れている蓋体58と配線基板51と接合部の表面にエポキシ系樹脂からなる樹脂層64をディスペンサにより塗布し、熱等を照射することによって硬化させる。このことにより接合部強度を高め、気密性を更に向上させることが可能となる。
(Process C)
Finally, as shown in FIG. 16, in step B, the master substrate 70 in which the lid body 58 is bonded to each wiring board 51 region is collectively cut along the outer periphery of each wiring board 51 region, and individual crystal oscillators are obtained. Get. The master substrate 70 is cut by, for example, collectively cutting the master substrate 70 from the master substrate side using a dicer or the like, thereby obtaining a plurality of crystal oscillators simultaneously. As shown in FIG. 11, after the master substrate is cut and individual crystal oscillators are formed, the lid 58 and the wiring substrate 51 appearing on the outer surface of the crystal oscillator, and the resin layer made of epoxy resin on the surface of the joint portion 64 is applied by a dispenser and cured by irradiation with heat or the like. This can increase the joint strength and further improve the airtightness.

しかもこの場合、水晶発振器の組み立てに際して、マスター基板70そのものがキャリアとして機能するようになっていることから、個片化した配線基板を個々にキャリアに保持して水晶発振器を組み立てるといった煩雑な作業は一切不要となり、これにより水晶発振器の組み立て工程が大幅に簡素化されるようになり、水晶発振器の生産性向上に供することが可能となる。尚、本実施例2に開示の製造方法では、加熱炉を用いて接合材59を溶融させ封止しているが、レーザー等を照射することにより接合材59を加熱溶融させて気密封止をする方法でも構わない。   In addition, in this case, since the master substrate 70 itself functions as a carrier when the crystal oscillator is assembled, the complicated operation of assembling the crystal oscillator by holding the separated wiring boards individually on the carrier is not necessary. This eliminates the need for any of them, which greatly simplifies the process of assembling the crystal oscillator, and makes it possible to improve the productivity of the crystal oscillator. In the manufacturing method disclosed in the second embodiment, the bonding material 59 is melted and sealed using a heating furnace. However, the bonding material 59 is heated and melted by irradiation with a laser or the like to perform hermetic sealing. It does not matter how you do it.

尚、本発明は上述の実施例1及び実施例2に記載のものに限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更、改良等が可能である。例えば、上述した実施形態においては、圧電振動素子の材料として水晶を用いたものを例示したが、圧電効果を奏するものであれば、水晶の他に、タンタル酸リチウム、ニオブ酸リチウムや圧電セラミックを使用しても構わない。又、上述した実施形態では、圧電デバイスの一例として圧電(水晶)振動子及び圧電(水晶)発振器を例示して説明したが、圧電振動素子として弾性表面波(SAW)フィルタ等の他の圧電振動素子を用いる場合にも本発明は適用可能である。   The present invention is not limited to those described in the first embodiment and the second embodiment, and various changes and improvements can be made without departing from the gist of the present invention. For example, in the above-described embodiment, the material using the quartz crystal as the material of the piezoelectric vibration element is exemplified. However, in addition to the crystal, lithium tantalate, lithium niobate, or piezoelectric ceramic is used as long as the material has a piezoelectric effect. You can use it. In the above-described embodiment, a piezoelectric (quartz) vibrator and a piezoelectric (quartz) oscillator are illustrated as an example of a piezoelectric device. However, other piezoelectric vibrations such as a surface acoustic wave (SAW) filter are used as piezoelectric vibration elements. The present invention is also applicable when using an element.

図1は、本発明に係る圧電デバイスの一実施形態を、圧電デバイスの一つである水晶振動子を例に示した分解斜視図である。FIG. 1 is an exploded perspective view showing an embodiment of a piezoelectric device according to the present invention, taking as an example a crystal resonator that is one of the piezoelectric devices. 図2は、図1に記載の水晶振動子を組み立てた場合を示した断面図である。FIG. 2 is a cross-sectional view showing a case where the crystal resonator shown in FIG. 1 is assembled. 図3は、本発明に係る水晶振動子(圧電デバイス)の他の実施形態を示した断面図である。FIG. 3 is a cross-sectional view showing another embodiment of a crystal resonator (piezoelectric device) according to the present invention. 図4は、本発明に係る水晶振動子(圧電デバイス)の他の実施形態を示した断面図である。FIG. 4 is a cross-sectional view showing another embodiment of a crystal resonator (piezoelectric device) according to the present invention. 図5は、本発明に係る水晶振動子(圧電デバイス)の他の実施形態を示した断面図である。FIG. 5 is a cross-sectional view showing another embodiment of a crystal resonator (piezoelectric device) according to the present invention. 図6は、本発明に係る水晶振動子(圧電デバイス)の製造工程の一工程(工程A)を示した形態図である。FIG. 6 is a view showing one step (step A) of the manufacturing process of the crystal resonator (piezoelectric device) according to the present invention. 図7は、本発明に係る水晶振動子(圧電デバイス)の製造工程の一工程(工程B)を示した形態図である。FIG. 7 is a view showing one process (process B) of the manufacturing process of the crystal resonator (piezoelectric device) according to the present invention. 図8は、本発明に係る水晶振動子(圧電デバイス)の製造工程の一工程(工程C)を示した形態図である。FIG. 8 is a diagram showing one process (process C) of the manufacturing process of the crystal resonator (piezoelectric device) according to the present invention. 図9は、本発明に係る圧電デバイスの他の実施形態を、圧電デバイスの一つである水晶発振器を例に示した断面図である。FIG. 9 is a cross-sectional view showing another embodiment of the piezoelectric device according to the present invention, taking a crystal oscillator as one of the piezoelectric devices as an example. 図10は、本発明に係る水晶発振器(圧電デバイス)の他の実施形態を示した断面図である。FIG. 10 is a sectional view showing another embodiment of the crystal oscillator (piezoelectric device) according to the present invention. 図11は、本発明に係る水晶発振器(圧電デバイス)の他の実施形態を示した断面図である。FIG. 11 is a cross-sectional view showing another embodiment of the crystal oscillator (piezoelectric device) according to the present invention. 図12は、本発明に係る水晶発振器(圧電デバイス)の他の実施形態を示した断面図である。FIG. 12 is a sectional view showing another embodiment of the crystal oscillator (piezoelectric device) according to the present invention. 図13は、本発明に係る水晶発振器(圧電デバイス)の他の実施形態を示した断面図である。FIG. 13 is a sectional view showing another embodiment of a crystal oscillator (piezoelectric device) according to the present invention. 図14は、本発明に係る水晶発振器(圧電デバイス)の製造工程の一工程(工程A)を示した形態図である。FIG. 14 is a diagram showing one process (process A) of the manufacturing process of the crystal oscillator (piezoelectric device) according to the present invention. 図15は、本発明に係る水晶発振器(圧電デバイス)の製造工程の一工程(工程B)を示した形態図である。FIG. 15 is a view showing one process (process B) of the manufacturing process of the crystal oscillator (piezoelectric device) according to the present invention. 図16は、本発明に係る水晶発振器(圧電デバイス)の製造工程の一工程(工程C)を示した形態図である。FIG. 16 is a view showing one process (process C) of the manufacturing process of the crystal oscillator (piezoelectric device) according to the present invention.

符号の説明Explanation of symbols

1,51・・・配線基板
2,52・・・素子接続用電極パッド
3,53・・・外部接続用電極端子
4,54・・・導体層
5,56・・・水晶振動素子(圧電振動素子)
6・・・励振電極
7,57・・・導電性接着材
8,58・・・蓋体
9,59・・・接合材
10,70・・・マスター基板
11,61・・・段差部
12,62・・・溝部
14,64・・・樹脂層
55・・・集積回路素子
60・・・凹部
DESCRIPTION OF SYMBOLS 1,51 ... Wiring board 2,52 ... Electrode connection electrode pad 3,53 ... External connection electrode terminal 4,54 ... Conductive layer 5,56 ... Crystal vibration element (piezoelectric vibration) element)
6 ... Excitation electrode 7,57 ... Conductive adhesive 8,58 ... Cover body 9,59 ... Joint material 10,70 ... Master substrate 11,61 ... Step 12, 62 ... groove 14, 64 ... resin layer 55 ... integrated circuit element 60 ... concave

Claims (6)

配線基板と、該配線基板の一方の主面に少なくとも圧電振動素子が配置され、該圧電振動素子が配置された該配線基板の一方の主面を被覆した形態で該配線基板に固定される箱状の蓋体とから成る圧電デバイスにおいて、
配線基板の側面には該配線基板の一方の主面に向かって凸の段差部が設けられ、該段差部の側面に接合材が形成され、該蓋体の側壁部内面と該接合材とが接合され、該蓋体と該配線基板の一方の主面により形成される内部空間が気密に封止されていることを特徴とする圧電デバイス。
A wiring board and a box fixed to the wiring board in a form in which at least a piezoelectric vibration element is arranged on one main surface of the wiring board and covering one main surface of the wiring board on which the piezoelectric vibration element is arranged In a piezoelectric device consisting of a shaped lid,
A convex stepped portion is provided on one side of the wiring substrate on the side surface of the wiring substrate, a bonding material is formed on the side surface of the stepped portion, and the inner surface of the side wall of the lid and the bonding material are A piezoelectric device, wherein an internal space formed by joining and formed by one main surface of the lid and the wiring board is hermetically sealed.
該配線基板の一方の主面の辺縁部には、一方の主面表面から該配線基板の厚み方向に深さ成分を有する溝部が設けられていることを特徴とする請求項1記載の圧電デバイス。   2. The piezoelectric element according to claim 1, wherein a groove portion having a depth component in a thickness direction of the wiring substrate from the surface of the one main surface is provided at an edge portion of the one main surface of the wiring substrate. device. デバイス外面に表れている該蓋体と該配線基板と接合部の表面に樹脂層が設けられていることを特徴とする請求項1記載の圧電デバイス。   The piezoelectric device according to claim 1, wherein a resin layer is provided on the surface of the lid, the wiring board, and the joint portion that are exposed on the outer surface of the device. マトリクス状に配列された複数個の配線基板領域の各外周縁部には、各配線基板領域の一方の主面に凸の段差部が設けられ、各々の該段差部の側面に接合材が形成されたマスター基板を準備し、該マスター基板における各配線基板領域の一方の主面上に、少なくとも圧電振動素子を搭載する工程Aと、
該圧電振動素子が搭載されている空間を気密に封止するための箱状の蓋体を、該マスター基板の各配線基板領域の一方の主面上に被覆し、該蓋体の側壁部内面と該接合材とを接合する工程Bと、
該マスター基板の各配線基板領域の外周に沿って一括的に切断分離することにより、複数個の圧電デバイスを同時に得る工程Cと、
を具備することを特徴とする圧電デバイスの製造方法。
A convex step portion is provided on one main surface of each wiring board region at each outer peripheral edge portion of the plurality of wiring board regions arranged in a matrix, and a bonding material is formed on the side surface of each step portion. Preparing a master substrate, and mounting at least a piezoelectric vibration element on one main surface of each wiring board region in the master substrate; and
A box-shaped lid for hermetically sealing the space in which the piezoelectric vibration element is mounted is covered on one main surface of each wiring board region of the master substrate, and the inner surface of the side wall of the lid And step B for bonding the bonding material and
Step C for simultaneously obtaining a plurality of piezoelectric devices by collectively cutting and separating along the outer periphery of each wiring board region of the master substrate;
A method for manufacturing a piezoelectric device comprising:
各々の該配線基板領域の一方の主面の外周辺縁部に、一方の主面表面から該配線基板領域の厚み方向に深さ成分を有する溝部を設けることを特徴とする請求項4記載の圧電デバイスの製造方法。   5. The groove portion having a depth component in the thickness direction of the wiring board region from the surface of one main surface is provided at an outer peripheral edge of one main surface of each wiring board region. A method for manufacturing a piezoelectric device. 該マスター基板を切断後に、各圧電デバイスの外面に表れている該蓋体と該配線基板と接合部の表面に樹脂層を設ける工程を具備することを特徴とする請求項4記載の圧電デバイスの製造方法。   5. The piezoelectric device according to claim 4, further comprising a step of providing a resin layer on a surface of the lid, the wiring substrate, and the joint portion that are exposed on the outer surface of each piezoelectric device after cutting the master substrate. Production method.
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007165820A (en) * 2005-11-16 2007-06-28 Denso Corp Semiconductor chip
JP2007173975A (en) * 2005-12-19 2007-07-05 Nippon Dempa Kogyo Co Ltd Crystal device
JP2010087201A (en) * 2008-09-30 2010-04-15 Epson Toyocom Corp Electronic device, and method of manufacturing the same
JP2011228754A (en) * 2009-02-04 2011-11-10 Samsung Electro-Mechanics Co Ltd Wafer level package and method of manufacturing the same
JP2012065305A (en) * 2010-08-20 2012-03-29 Nippon Dempa Kogyo Co Ltd Method for producing piezoelectric device and piezoelectric device
JP2012074837A (en) * 2010-09-28 2012-04-12 Nippon Dempa Kogyo Co Ltd Piezoelectric device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08148965A (en) * 1994-11-24 1996-06-07 Toyo Commun Equip Co Ltd Surface mounted type piezoelectric component
JPH08148962A (en) * 1994-11-21 1996-06-07 Murata Mfg Co Ltd Piezoelectric component
JP2001516978A (en) * 1997-09-09 2001-10-02 アムコール・テクノロジー・インコーポレイテッド Shielded surface acoustic wave package
JP2005072050A (en) * 2003-08-27 2005-03-17 Citizen Watch Co Ltd Electronic device substrate, electronic device, and manufacturing method thereof
JP2005079635A (en) * 2003-08-28 2005-03-24 Murata Mfg Co Ltd Manufacturing method of electronic component
JP2005079656A (en) * 2003-08-28 2005-03-24 Kyocera Corp Piezoelectric vibrator
JP2005136816A (en) * 2003-10-31 2005-05-26 Kyocera Kinseki Corp Method of manufacturing piezoelectric vibrator

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08148962A (en) * 1994-11-21 1996-06-07 Murata Mfg Co Ltd Piezoelectric component
JPH08148965A (en) * 1994-11-24 1996-06-07 Toyo Commun Equip Co Ltd Surface mounted type piezoelectric component
JP2001516978A (en) * 1997-09-09 2001-10-02 アムコール・テクノロジー・インコーポレイテッド Shielded surface acoustic wave package
JP2005072050A (en) * 2003-08-27 2005-03-17 Citizen Watch Co Ltd Electronic device substrate, electronic device, and manufacturing method thereof
JP2005079635A (en) * 2003-08-28 2005-03-24 Murata Mfg Co Ltd Manufacturing method of electronic component
JP2005079656A (en) * 2003-08-28 2005-03-24 Kyocera Corp Piezoelectric vibrator
JP2005136816A (en) * 2003-10-31 2005-05-26 Kyocera Kinseki Corp Method of manufacturing piezoelectric vibrator

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007165820A (en) * 2005-11-16 2007-06-28 Denso Corp Semiconductor chip
JP2007173975A (en) * 2005-12-19 2007-07-05 Nippon Dempa Kogyo Co Ltd Crystal device
JP2010087201A (en) * 2008-09-30 2010-04-15 Epson Toyocom Corp Electronic device, and method of manufacturing the same
JP2011228754A (en) * 2009-02-04 2011-11-10 Samsung Electro-Mechanics Co Ltd Wafer level package and method of manufacturing the same
JP2012065305A (en) * 2010-08-20 2012-03-29 Nippon Dempa Kogyo Co Ltd Method for producing piezoelectric device and piezoelectric device
JP2012074837A (en) * 2010-09-28 2012-04-12 Nippon Dempa Kogyo Co Ltd Piezoelectric device
US8766513B2 (en) 2010-09-28 2014-07-01 Nihon Dempa Kogyo Co., Ltd. Piezoelectric device

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