JP2007097040A - Piezoelectric vibrator and piezoelectric oscillator - Google Patents

Piezoelectric vibrator and piezoelectric oscillator Download PDF

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JP2007097040A
JP2007097040A JP2005286322A JP2005286322A JP2007097040A JP 2007097040 A JP2007097040 A JP 2007097040A JP 2005286322 A JP2005286322 A JP 2005286322A JP 2005286322 A JP2005286322 A JP 2005286322A JP 2007097040 A JP2007097040 A JP 2007097040A
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piezoelectric
vibration element
element plate
piezoelectric vibration
oscillator
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Munetaka Soejima
宗高 副島
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Kyocera Crystal Device Corp
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Kyocera Crystal Device Corp
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<P>PROBLEM TO BE SOLVED: To provide a piezoelectric oscillator and piezoelectric vibrator capable of dealing with making the piezoelectric oscillator and the piezoelectric vibrator highly functional and making them into compound device. <P>SOLUTION: In a piezoelectric vibrator, within the identical cavity 7 of the same sealed container 1, at least two or more piezoelectric vibrating blanks 11, 12 are housed and on the piezoelectric vibrating blanks 11, 12, exciting electrodes 18, 19 are formed. The piezoelectric vibrators are packaged within the hermetically sealed container 1 so as not to overlap the exciting electrode 18, 19 portions thereof. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、携帯用通信機器等の電子機器に用いられる圧電振動子及び圧電発振器に関するものである。   The present invention relates to a piezoelectric vibrator and a piezoelectric oscillator used in an electronic device such as a portable communication device.

従来より、携帯用通信機器等の電子機器に圧電振動子及び圧電発振器が用いられている。   Conventionally, piezoelectric vibrators and piezoelectric oscillators have been used in electronic devices such as portable communication devices.

かかる従来の圧電発振器(ここでは圧電発振器を例に説明する。)としては、例えば図5に示す如く、容器101の上面に圧電振動素板111が、下面に半導体集積回路116が搭載されている。容器101の上側に積層されているセラミック基板上面に枠状の側壁103が形成されており、側壁103の内部に圧電振動素板111が搭載されている。圧電振動素板111は、セラミック基板の一端側に形成された配線パターンに圧電振動素板111が導電性接着剤113を介して固着され、電気的、機械的に保持されてなる。また、側壁103上面には蓋体104をシーム溶接等によって接合し、圧電振動素板111を気密封止している。   As such a conventional piezoelectric oscillator (here, a piezoelectric oscillator will be described as an example), for example, as shown in FIG. 5, a piezoelectric vibration element plate 111 is mounted on the upper surface of the container 101 and a semiconductor integrated circuit 116 is mounted on the lower surface. . A frame-like side wall 103 is formed on the upper surface of the ceramic substrate laminated on the upper side of the container 101, and a piezoelectric vibration element plate 111 is mounted inside the side wall 103. The piezoelectric vibration element plate 111 is electrically and mechanically held by fixing the piezoelectric vibration element plate 111 to a wiring pattern formed on one end side of the ceramic substrate via a conductive adhesive 113. Further, a lid 104 is joined to the upper surface of the side wall 103 by seam welding or the like, and the piezoelectric vibration element plate 111 is hermetically sealed.

また、容器101の下側に積層されているセラミック基板の下面には部品搭載パッド(不図示、以下同じ)が設けてあり、発振用の半導体集積回路116が部品搭載パッド上に搭載されている。   Further, a component mounting pad (not shown, the same applies hereinafter) is provided on the lower surface of the ceramic substrate laminated on the lower side of the container 101, and the semiconductor integrated circuit 116 for oscillation is mounted on the component mounting pad. .

さらに、セラミック基板の下面周囲には側壁部105が電気的、機械的に接続され、側壁部105底面の四隅部には4つの外部端子電極106が形成されている。この外部端子電極106は例えば、圧電振動素板111から引出配線114を介して接続された入出力端子として用いられる。
特開2003−46251号公報 特開2003−101349号公報 なお、出願人は前記した先行技術文献情報で特定される先行技術文献以外には、本発明に関連する先行技術文献を、本件出願時までに発見するに至らなかった。
Further, the side wall portion 105 is electrically and mechanically connected around the lower surface of the ceramic substrate, and four external terminal electrodes 106 are formed at the four corners of the bottom surface of the side wall portion 105. The external terminal electrode 106 is used as, for example, an input / output terminal connected from the piezoelectric vibration element plate 111 via the lead wire 114.
JP 2003-46251 A JP, 2003-101349, A In addition to the prior art literature specified by the above-mentioned prior art literature information, the applicant did not find the prior art literature relevant to the present invention by the time of this application. .

しかしながら、上述した従来の圧電発振器及び圧電振動子においては、その構造上、同一密閉容器内に圧電振動素板を複数個配置するといった複合化が困難であり、圧電発振器及び圧電振動子の高機能化、複合デバイス化の対応が困難であるという欠点を有していた。   However, in the conventional piezoelectric oscillator and piezoelectric vibrator described above, it is difficult to make a composite such as arranging a plurality of piezoelectric vibrating base plates in the same sealed container because of its structure. However, it has a drawback that it is difficult to respond to the integration and composite devices.

本発明は上記欠点に鑑み考え出されたものであり、従ってその目的は、圧電発振器及び圧電振動子の高機能化、複合デバイス化の対応が可能な圧電発振器及び圧電振動子を提供することにある。   The present invention has been conceived in view of the above-described drawbacks. Accordingly, it is an object of the present invention to provide a piezoelectric oscillator and a piezoelectric vibrator capable of increasing the functionality of the piezoelectric oscillator and the piezoelectric vibrator and making it a composite device. is there.

本発明の圧電振動子は、同一密閉容器の同一キャビティー中に少なくとも2つ以上の圧電振動素板を収納し、前記圧電振動素板に励振電極を形成した圧電振動子であって、前記各圧電振動子の各々の励振電極部分が重ならない配置で前記密閉容器内に搭載されていることを特徴とする。   The piezoelectric vibrator of the present invention is a piezoelectric vibrator in which at least two piezoelectric vibration element plates are accommodated in the same cavity of the same sealed container, and an excitation electrode is formed on the piezoelectric vibration element plate. Each excitation electrode portion of the piezoelectric vibrator is mounted in the sealed container so as not to overlap.

また、上記構成における圧電振動子の配置は、段違いに配置されるかあるいは、同一高さに並行して配置する搭載構造を有することを特徴とする。   In addition, the piezoelectric vibrators having the above-described configuration are characterized in that they have a mounting structure in which they are arranged in steps or arranged in parallel at the same height.

また、本発明の圧電発振器は、上記構成において圧電発振器に半導体集積回路を実装して発振器を構成することを特徴とする。   According to another aspect of the present invention, there is provided a piezoelectric oscillator including a semiconductor integrated circuit mounted on the piezoelectric oscillator.

本発明の圧電振動子によれば、同一密閉容器の同一キャビティー中に少なくとも2つ以上の圧電振動素板を収納し、前記圧電振動素板に励振電極を形成した圧電発振器であって、前記各圧電発振器の各々の励振電極部分が重ならない配置で前記密閉容器内に搭載されていることから、2枚の圧電振動素板の周波数調整を同時に同一の工程で作業できるので圧電振動子の製造工程を簡略化することが可能となる。   According to the piezoelectric vibrator of the present invention, there is provided a piezoelectric oscillator in which at least two piezoelectric vibration element plates are housed in the same cavity of the same sealed container, and excitation electrodes are formed on the piezoelectric vibration element plate, Since each excitation electrode portion of each piezoelectric oscillator is mounted in the sealed container so as not to overlap, the frequency adjustment of two piezoelectric vibration element plates can be performed simultaneously in the same process, so that the piezoelectric vibrator is manufactured. The process can be simplified.

以下、本発明を添付図面に基づいて詳細に説明する。なお、各図においての同一の符号は同じ対象を示すものとする。図1は本発明の実施形態にかかる圧電発振器の断面図である。図1に図示する圧電発振器は大略的に言って、容器1と、側壁部5、第1の圧電振動素板11と第2の圧電振動素板12、半導体集積回路16、樹脂17とで構成されている。図1に図示する圧電発振器は、キャビティー7に第1の圧電振動素板11と第2の圧電振動素板12を収容した容器1に、容器1の底面に側壁部5が接続され、かつ固定させるとともに側壁部5の底面の四隅部に外部端子電極6が設けられている。また側壁部5間に位置する容器1の下面に半導体集積回路16を搭載した構造を有している。また、半導体集積回路16と側壁部5側面は樹脂17で被われた構造となっている。   Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. In addition, the same code | symbol in each figure shall show the same object. FIG. 1 is a sectional view of a piezoelectric oscillator according to an embodiment of the present invention. 1 generally includes a container 1, a side wall 5, a first piezoelectric vibration element plate 11 and a second piezoelectric vibration element plate 12, a semiconductor integrated circuit 16, and a resin 17. Has been. The piezoelectric oscillator shown in FIG. 1 includes a container 1 in which a first piezoelectric vibration element plate 11 and a second piezoelectric vibration element plate 12 are accommodated in a cavity 7, and a side wall 5 is connected to the bottom surface of the container 1. External terminal electrodes 6 are provided at the four corners of the bottom surface of the side wall 5 while being fixed. Further, the semiconductor integrated circuit 16 is mounted on the lower surface of the container 1 located between the side wall portions 5. The semiconductor integrated circuit 16 and the side surface of the side wall 5 are covered with a resin 17.

図2はシート状の母基板(不図示)から切断された1個のベース2領域を示したものであり、シート状の母基板に半導体集積回路16および樹脂17を塗布注入した状態の半導体集積回路16搭載面側の下面図である。   FIG. 2 shows one base 2 region cut from a sheet-like mother substrate (not shown). The semiconductor integrated circuit 16 in which the semiconductor integrated circuit 16 and the resin 17 are applied and injected into the sheet-like mother substrate. It is a bottom view of the circuit 16 mounting surface side.

前記容器1は、例えば、ガラス−セラミック、アルミナセラミックス等のセラミック材料から成るベース2、ベース2と同様のセラミック材料から成る側壁3、42アロイやコパール、リン青銅等から成る蓋体4から成り、前記ベース2の上面に側壁3を取着させ、その上面に蓋体4を載置し固定させることによって容器1が構成され、側壁3の内側に位置するベース2の上面に導電性接着剤13を介して第1の圧電振動素板11と第2の圧電振動素板12が実装される。前記容器1はその内部に、具体的には、ベース2の上面と側壁3の内面と蓋体4の下面とで囲まれるキャビティー7内に第1の圧電振動素板11と第2の圧電振動素板12を収容して気密封止するためのものである。   The container 1 includes, for example, a base 2 made of a ceramic material such as glass-ceramic and alumina ceramic, a side wall 3 made of a ceramic material similar to the base 2, and a lid 4 made of alloy, copal, phosphor bronze, etc. The side wall 3 is attached to the upper surface of the base 2, and the lid 4 is placed and fixed on the upper surface of the base 2. Thus, the container 1 is formed, and the conductive adhesive 13 is attached to the upper surface of the base 2 located inside the side wall 3. The first piezoelectric vibration element plate 11 and the second piezoelectric vibration element plate 12 are mounted via The container 1 has a first piezoelectric vibrating element plate 11 and a second piezoelectric element in a cavity 7 surrounded by the inside thereof, specifically, the upper surface of the base 2, the inner surface of the side wall 3, and the lower surface of the lid body 4. This is for accommodating the vibration element plate 12 and hermetically sealing it.

一方、前記容器1のキャビティー7に収容される第1の圧電振動素板11と第2の圧電振動素板12は、所定の結晶軸でカットした圧電片の両主面に一対の励振電極18、19を被着・形成してなり、外部からの変動電圧が一対の励振電極18、19を介して圧電片に印加されると、所定の周波数で厚みすべり振動を起こす。   On the other hand, the first piezoelectric vibration element plate 11 and the second piezoelectric vibration element plate 12 housed in the cavity 7 of the container 1 have a pair of excitation electrodes on both main surfaces of a piezoelectric piece cut along a predetermined crystal axis. When the fluctuating voltage from the outside is applied to the piezoelectric piece through the pair of excitation electrodes 18 and 19, thickness-shear vibration is caused at a predetermined frequency.

また一方で図1、図2に図示するように、上述したベース2の下面には、側壁部5が被着・形成されており、側壁部5の底面の四隅部に形成された外部端子電極6間に位置するベース2の下面には、矩形状に形成されたフリップチップ型の半導体集積回路16が搭載されており、半導体集積回路16は導電性接着剤15を介してベース2に接続されている。また、半導体集積回路16と側壁部5とは樹脂17で覆われた構造となっている。   On the other hand, as shown in FIGS. 1 and 2, side walls 5 are attached and formed on the lower surface of the base 2 described above, and external terminal electrodes formed at the four corners of the bottom surface of the side walls 5. A flip-chip type semiconductor integrated circuit 16 formed in a rectangular shape is mounted on the lower surface of the base 2 positioned between the semiconductors 6. The semiconductor integrated circuit 16 is connected to the base 2 via a conductive adhesive 15. ing. In addition, the semiconductor integrated circuit 16 and the side wall 5 are covered with a resin 17.

前記半導体集積回路16はその回路形成面に、周囲の温度状態を検知する感温素子、第1の圧電振動素板11と第2の圧電振動素板12の温度特性を補償する温度補償データを有し、温度補償データに基づいて前記第1の圧電振動素板11と第2の圧電振動素板12の励振特性を温度変化に応じて補正する温度補償回路、温度補償回路に接続されて所定の発振出力を生成する発振回路等が設けられており、発振回路で生成された発振出力は、外部に出力された後、例えばクロック信号等の基準信号として利用されることとなる。ここで第1の圧電振動素板11と第2の圧電振動素板12と半導体集積回路16は図1に図示するベース2の内層に設けられた引出配線14により接続されている。   The semiconductor integrated circuit 16 has temperature compensation data for compensating temperature characteristics of the temperature sensing element, the first piezoelectric vibration element plate 11 and the second piezoelectric vibration element plate 12 on the circuit forming surface. A temperature compensation circuit for correcting the excitation characteristics of the first piezoelectric vibration element plate 11 and the second piezoelectric vibration element plate 12 according to a temperature change based on temperature compensation data; An oscillation circuit or the like for generating the oscillation output is provided, and the oscillation output generated by the oscillation circuit is output to the outside and then used as a reference signal such as a clock signal. Here, the first piezoelectric vibration element plate 11, the second piezoelectric vibration element plate 12, and the semiconductor integrated circuit 16 are connected by a lead wire 14 provided in the inner layer of the base 2 shown in FIG.

また、図3、図4は本発明の実施形態を圧電振動子に展開した場合の断面図であり、図3においては容器1に段差を設けて第1の圧電振動素板11と第2の圧電振動素板12の配置を段違いに配置した例であり、図4は容器1に第1の圧電振動素板11と第2の圧電振動素板12を同一高さに並行して配置した例の圧電振動子の配置構造である。   3 and 4 are cross-sectional views when the embodiment of the present invention is applied to a piezoelectric vibrator. In FIG. 3, the container 1 is provided with a step so that the first piezoelectric vibrating element plate 11 and the second piezoelectric vibrating plate 11 FIG. 4 shows an example in which the piezoelectric vibration element plates 12 are arranged in different stages. FIG. 4 shows an example in which the first piezoelectric vibration element plate 11 and the second piezoelectric vibration element plate 12 are arranged in parallel in the container 1 at the same height. This is an arrangement structure of piezoelectric vibrators.

次に上述した圧電発振器の製造方法について、本発明の実施形態である図1、図2を用いて説明する。 まず、縦m列×横n行(m、nは2以上の自然数)のマトリクス状に配列された複数個のキャビティー7を有するシート状の母基板(不図示)を準備する。次に、図1に図示するように各キャビティー7に第1の圧電振動素板11と第2の圧電振動素板12とを囲繞する側壁3とを搭載する。各キャビティー7には、その上面側に一対の接続パッドと接合用の導体層が被着・形成されている。また、各キャビティー7と相反する面の半導体集積回路16搭載面側にはベース2の周囲に側壁部5を搭載する。また、側壁部5の底面には外部端子電極6が先の図2に図示するように被着して形成されている。   Next, the manufacturing method of the piezoelectric oscillator mentioned above is demonstrated using FIG. 1, FIG. 2 which is embodiment of this invention. First, a sheet-like mother substrate (not shown) having a plurality of cavities 7 arranged in a matrix of m columns × n rows (m and n are natural numbers of 2 or more) is prepared. Next, as shown in FIG. 1, the side walls 3 surrounding the first piezoelectric vibration element plate 11 and the second piezoelectric vibration element plate 12 are mounted in each cavity 7. Each cavity 7 is provided with a pair of connection pads and a bonding conductor layer on the upper surface thereof. Further, the side wall portion 5 is mounted around the base 2 on the side where the semiconductor integrated circuit 16 is mounted on the surface opposite to the cavities 7. Further, external terminal electrodes 6 are formed on the bottom surface of the side wall portion 5 as shown in FIG.

このようなシート状の母基板からなるベース2は、例えば、アルミナセラミックス等から成るセラミック材料粉末に適当な有機溶剤等を添加し更に混合して得たセラミックグリーンシートの表面等に、接続パッドや外部端子電極6等となる導体ペーストを所定のパターンに印刷して塗布するとともに、これを複数枚積層してプレス成形した後、高温で焼成することによって製作される。   The base 2 made of such a sheet-like mother board is formed by connecting, for example, connecting pads or the like on the surface of a ceramic green sheet obtained by adding an appropriate organic solvent to a ceramic material powder made of alumina ceramics and mixing them. A conductor paste to be used as the external terminal electrode 6 or the like is printed in a predetermined pattern and applied, and a plurality of the pastes are laminated and press-molded, and then fired at a high temperature.

なお、シート状の母基板には、マトリクス状に配列された個々の圧電発振器の間には一般的に所定の捨代領域(不図示)が設けられている。この捨代領域には各圧電発振器に2個の温度補償制御端子(不図示)が接続されている。そして、キャビティー7を有するシート状の母基板に形成される側壁3の内側に第1の圧電振動素板11と第2の圧電振動素板12を1個ずつ搭載する。第1の圧電振動素板11と第2の圧電振動素板12はその励振電極18、19とシート状の母基板上面の対応する搭載パッドとを導電性接着剤13を介して電気的及び機械的に接続することによってシート状の母基板上に搭載される。   The sheet-like mother board is generally provided with a predetermined separation area (not shown) between the individual piezoelectric oscillators arranged in a matrix. Two temperature compensation control terminals (not shown) are connected to each piezoelectric oscillator in this surplus area. Then, one each of the first piezoelectric vibration element plate 11 and the second piezoelectric vibration element plate 12 are mounted inside the side wall 3 formed on the sheet-like mother substrate having the cavity 7. The first piezoelectric vibration element plate 11 and the second piezoelectric vibration element plate 12 are electrically and mechanically connected to the excitation electrodes 18 and 19 and the corresponding mounting pads on the upper surface of the sheet-like mother substrate through the conductive adhesive 13. Are connected to each other and mounted on a sheet-like mother board.

また、シート状の母基板のキャビティー7と1対1に対応する複数個のカバー(蓋)領域を有する金属製の蓋体4を、第1の圧電振動素板11と第2の圧電振動素板12が封止されるように側壁3上に載置・接合する。前記蓋体4としては、例えば、42アロイやコバール,リン青銅等の金属から成る厚みが60μm〜100μmの金属板が用いられ、このような蓋体4にも、先に述べたシート状の母基板と同様に、各カバー領域間に所定の捨代領域が設けられている。   In addition, the metal lid body 4 having a plurality of cover (lid) areas corresponding to the cavities 7 of the sheet-like mother board on a one-to-one basis is used as the first piezoelectric vibration element plate 11 and the second piezoelectric vibration. It mounts and joins on the side wall 3 so that the base plate 12 may be sealed. As the lid 4, for example, a metal plate having a thickness of 60 μm to 100 μm made of a metal such as 42 alloy, Kovar, phosphor bronze or the like is used. Similar to the substrate, a predetermined margin area is provided between the cover areas.

この工程では、蓋体4を各カバー(蓋)領域の内側に対応するキャビティー7領域に第1の圧電振動素板11と第2の圧電振動素板12が配されるようにしてシート状の母基板上面の側壁3上に載置させ、しかる後に両者を従来から周知の金すず封止等により接合することによって蓋体4が側壁3の上面に取着し固定される。なお、上述した一連の接合工程は、窒素ガスやアルゴンガス等の不活性ガス雰囲気中で行うのが好ましく、これによって第1の圧電振動素板11と第2の圧電振動素板12が収納される空間には不活性ガスが充満されるため、第1の圧電振動素板11と第2の圧電振動素板12が酸素や大気中の水分等によって腐食して劣化するおそれを有効に防止することができる。   In this step, the cover 4 is formed in a sheet shape so that the first piezoelectric vibration element plate 11 and the second piezoelectric vibration element plate 12 are arranged in the cavity 7 region corresponding to the inside of each cover (lid) region. Then, the lid 4 is attached to the upper surface of the side wall 3 and fixed by bonding them together by means of conventionally known gold tin sealing or the like. The series of joining steps described above is preferably performed in an inert gas atmosphere such as nitrogen gas or argon gas, whereby the first piezoelectric vibration element plate 11 and the second piezoelectric vibration element plate 12 are accommodated. Since the inert gas is filled in the space, the first piezoelectric vibration element plate 11 and the second piezoelectric vibration element plate 12 are effectively prevented from being corroded and deteriorated by oxygen or moisture in the atmosphere. be able to.

次にシート状の母基板下面の側壁部5で囲まれる領域に半導体集積回路16を1個ずつ搭載する。半導体集積回路16は、その接続電極とシート状の母基板下面の対応する搭載パッドとを導電性接着剤15を介して電気的及び機械的に接続することによってシート状の母基板に搭載される。その後、側壁部5の側面全面が覆われるように樹脂17を塗布注入する。   Next, the semiconductor integrated circuits 16 are mounted one by one in the region surrounded by the side wall 5 on the lower surface of the sheet-like mother board. The semiconductor integrated circuit 16 is mounted on the sheet-like mother board by electrically and mechanically connecting the connection electrodes and corresponding mounting pads on the lower surface of the sheet-like mother board via the conductive adhesive 15. . Thereafter, resin 17 is applied and injected so that the entire side surface of the side wall 5 is covered.

そして、半導体集積回路16は、その回路形成面に周囲の温度状態を検知する感温素子や第1の圧電振動素板11と第2の圧電振動素板12の温度特性を補償する温度補償データを有し、温度補償データに基づいて第1の圧電振動素板11と第2の圧電振動素板12の励振特性を温度変化に応じて補正する温度補償回路を有する半導体集積回路16へ、圧電発振器の仕様を所望の数値となるように、温度補償制御端子よりビットデータを入力し温度補償データの書き込みを行う。   Then, the semiconductor integrated circuit 16 has temperature compensation data for compensating the temperature characteristics of the temperature sensing element detecting the ambient temperature state on the circuit forming surface and the temperature characteristics of the first piezoelectric vibration element plate 11 and the second piezoelectric vibration element plate 12. To the semiconductor integrated circuit 16 having a temperature compensation circuit for correcting the excitation characteristics of the first piezoelectric vibration element plate 12 and the second piezoelectric vibration element plate 12 according to the temperature change based on the temperature compensation data. Bit data is input from the temperature compensation control terminal and the temperature compensation data is written so that the specification of the oscillator becomes a desired value.

最後に、シート状の母基板を各ベース2領域の外周に沿って一括的に分割・切断(ダイシング)し、これによって複数個の圧電発振器が同時に製作される。 また、シート状の母基板の切断(ダイシング)は、例えば、ダイサー等を用いて、これらの部材を一括的に切断(ダイシング)することによって行われ、これによって複数個の圧電発振器が同時に得られる。   Finally, the sheet-like mother board is collectively divided and cut (diced) along the outer periphery of each base 2 region, whereby a plurality of piezoelectric oscillators are simultaneously manufactured. Further, the cutting (dicing) of the sheet-like mother substrate is performed by collectively cutting (dicing) these members using a dicer or the like, and thereby a plurality of piezoelectric oscillators can be obtained simultaneously. .

ここで、本発明の特徴部分は図1に図示するように、同一密閉容器1の中に、第1及び第2の圧電振動素板11、12の各々の励振電極18、19部分が重ならないような位置関係で固着・収納したことにある。これにより、第1及び第2の圧電振動素板11、12の周波数調整を同時に同一の工程で作業できるので圧電発振器の製造工程の簡略化が可能となる。   Here, as shown in FIG. 1, the characteristic part of the present invention is that the excitation electrodes 18 and 19 of the first and second piezoelectric vibrating base plates 11 and 12 do not overlap in the same sealed container 1. This is because it is fixed and stored in such a positional relationship. As a result, the frequency adjustment of the first and second piezoelectric vibrating base plates 11 and 12 can be performed simultaneously in the same process, so that the manufacturing process of the piezoelectric oscillator can be simplified.

また、本発明の圧電発振器によれば、第1の圧電振動素板11と第2の圧電振動素板12を同一周波数で動作させる場合には、第1の圧電振動素板11を常時発振させ、第2の圧電振動素板12は第1の圧電振動素板11の異常発振を検知して動作するように半導体集積回路16で設定処理することで、高い信頼性を要求される用途への使用が可能となる。   Further, according to the piezoelectric oscillator of the present invention, when the first piezoelectric vibration element plate 11 and the second piezoelectric vibration element plate 12 are operated at the same frequency, the first piezoelectric vibration element plate 11 is always oscillated. The second piezoelectric vibration element 12 is subjected to setting processing in the semiconductor integrated circuit 16 so as to operate by detecting abnormal oscillation of the first piezoelectric vibration element 11, so that the second piezoelectric vibration element 12 can be used for applications requiring high reliability. Can be used.

また、更に本発明の圧電発振器によれば、第1の圧電振動素板11と第2の圧電振動素板12のいずれかが半導体集積回路16により発振器の機能として動作し、残る一方の圧電振動素板は半導体集積回路16を介さずに振動素板単体の機能として動作することから、半導体集積回路16により温度補償する圧電発振器として機能する第1の圧電振動素板11と振動素板単体の発振周波数を発振する圧電発振器として機能する第2の圧電振動素板12を同一密閉容器1内に収容することができることから、圧電発振器の複合化が可能となる。   Further, according to the piezoelectric oscillator of the present invention, one of the first piezoelectric vibration element plate 11 and the second piezoelectric vibration element plate 12 operates as a function of an oscillator by the semiconductor integrated circuit 16, and the remaining one piezoelectric vibration element. Since the element plate operates as a function of the vibration element plate alone without using the semiconductor integrated circuit 16, the first piezoelectric element member 11 that functions as a piezoelectric oscillator that compensates the temperature by the semiconductor integrated circuit 16 and the vibration element member alone. Since the second piezoelectric vibrating element 12 that functions as a piezoelectric oscillator that oscillates the oscillation frequency can be accommodated in the same sealed container 1, the piezoelectric oscillator can be combined.

なお、本発明は上述の実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更、改良等が可能である。   In addition, this invention is not limited to the above-mentioned embodiment, A various change, improvement, etc. are possible in the range which does not deviate from the summary of this invention.

例えば上述の実施形態においては、第1の圧電振動素板11と第2の圧電振動素板12のみを同一密閉容器1内に収容しているが、さらに第3、第4の圧電振動素板を収容しても構わない。また、上述の実施形態においては、1個の半導体集積回路16のみを搭載しているが、同一密閉容器1内に収容する圧電振動素板の数だけ半導体集積回路16を搭載しても構わない。この場合も本発明の技術的範囲に含まれることは言うまでも無い。   For example, in the above-described embodiment, only the first piezoelectric vibration element plate 11 and the second piezoelectric vibration element plate 12 are accommodated in the same sealed container 1, but the third and fourth piezoelectric vibration element plates are further provided. May be accommodated. In the above-described embodiment, only one semiconductor integrated circuit 16 is mounted. However, the semiconductor integrated circuits 16 may be mounted as many as the number of piezoelectric vibration element plates accommodated in the same sealed container 1. . Needless to say, this case is also included in the technical scope of the present invention.

本発明の実施形態にかかる圧電発振器の概略の断面図である。1 is a schematic cross-sectional view of a piezoelectric oscillator according to an embodiment of the present invention. 本発明の実施形態にかかる圧電発振器の半導体集積回路および樹脂を塗布注入した状態を示す半導体集積回路搭載面側の下面図である。1 is a bottom view of a semiconductor integrated circuit mounting surface side showing a state in which a semiconductor integrated circuit and resin of a piezoelectric oscillator according to an embodiment of the present invention are applied and injected. FIG. 本発明の実施形態を圧電振動子に展開した場合であり、容器に段差を設けて第1の圧電振動素板と第2の圧電振動素板の配置を段違いに配置した場合の断面図である。FIG. 5 is a cross-sectional view of the case where the embodiment of the present invention is developed in a piezoelectric vibrator, in which a step is provided in the container and the first piezoelectric vibration element plate and the second piezoelectric vibration element plate are arranged in a stepwise manner. . 本発明の実施形態を圧電振動子に展開した場合であり、容器に第1の圧電振動素板と第2の圧電振動素板を同一高さに並行して配置した場合の断面図である。It is a case where the embodiment of the present invention is developed in a piezoelectric vibrator, and is a cross-sectional view when a first piezoelectric vibration element plate and a second piezoelectric vibration element plate are arranged in parallel at the same height in a container. 従来の圧電発振器の概略の斜視図である。It is a schematic perspective view of a conventional piezoelectric oscillator.

符号の説明Explanation of symbols

1・・・容器
2・・・ベース
3・・・側壁
4・・・蓋体
5・・・側壁部
6・・・外部端子電極
7・・・キャビティー
11・・・第1の圧電振動素板
12・・・第2の圧電振動素板
13・・・導電性接着剤
14・・・引出配線
15・・・導電性接着剤
16・・・半導体集積回路
17・・・樹脂
18・・・第1の圧電振動素板の励振電極
19・・・第2の圧電振動素板の励振電極
DESCRIPTION OF SYMBOLS 1 ... Container 2 ... Base 3 ... Side wall 4 ... Cover body 5 ... Side wall part 6 ... External terminal electrode 7 ... Cavity 11 ... 1st piezoelectric vibration element Plate 12 ... Second piezoelectric vibrating base plate 13 ... Conductive adhesive 14 ... Extract wiring 15 ... Conductive adhesive 16 ... Semiconductor integrated circuit 17 ... Resin 18 ... Excitation electrode of first piezoelectric vibration element plate 19... Excitation electrode of second piezoelectric vibration element plate

Claims (3)

同一密閉容器の同一キャビティー中に少なくとも2つ以上の圧電振動素板を収納し、前記圧電振動素板に励振電極を形成した圧電振動子であって、
前記各圧電振動子の各々の励振電極部分が重ならない配置で前記密閉容器内に搭載されていることを特徴とする圧電振動子。
A piezoelectric vibrator in which at least two piezoelectric vibration element plates are housed in the same cavity of the same sealed container, and an excitation electrode is formed on the piezoelectric vibration element plate,
A piezoelectric vibrator characterized in that each excitation electrode portion of each piezoelectric vibrator is mounted in the hermetically sealed container so as not to overlap.
請求項1記載の圧電振動子の配置は、段違いに配置されるかあるいは、同一高さに並行して配置した搭載構造を有することを特徴とする圧電振動子。 The piezoelectric vibrator according to claim 1, wherein the piezoelectric vibrator has a mounting structure in which the piezoelectric vibrators are arranged in steps or arranged in parallel at the same height. 請求項1または請求項2に記載の圧電振動子と半導体集積回路とを備えて構成されることを特徴とする圧電発振器。 A piezoelectric oscillator comprising the piezoelectric vibrator according to claim 1 or 2 and a semiconductor integrated circuit.
JP2005286322A 2005-09-30 2005-09-30 Piezoelectric vibrator and piezoelectric oscillator Pending JP2007097040A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7978016B2 (en) 2008-08-19 2011-07-12 Nihon Dempa Kogyo Co., Ltd Crystal oscillator
JP2016066877A (en) * 2014-09-24 2016-04-28 セイコーエプソン株式会社 Oscillator, electronic equipment, and mobile body

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002280866A (en) * 2001-03-19 2002-09-27 Seiko Epson Corp Composite piezoelectric vibrator
JP2002280865A (en) * 2001-03-16 2002-09-27 Seiko Epson Corp Piezoelectric device
JP2003258589A (en) * 2002-02-26 2003-09-12 Seiko Epson Corp Piezoelectric device, radio watch utilizing the piezoelectric device, mobile phone utilizing the piezoelectric device, and electronic device utilizing the piezoelectric device
JP2004120073A (en) * 2002-09-24 2004-04-15 Seiko Epson Corp Piezoelectric device, its manufacturing method, clock device and package therefor

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Publication number Priority date Publication date Assignee Title
JP2002280865A (en) * 2001-03-16 2002-09-27 Seiko Epson Corp Piezoelectric device
JP2002280866A (en) * 2001-03-19 2002-09-27 Seiko Epson Corp Composite piezoelectric vibrator
JP2003258589A (en) * 2002-02-26 2003-09-12 Seiko Epson Corp Piezoelectric device, radio watch utilizing the piezoelectric device, mobile phone utilizing the piezoelectric device, and electronic device utilizing the piezoelectric device
JP2004120073A (en) * 2002-09-24 2004-04-15 Seiko Epson Corp Piezoelectric device, its manufacturing method, clock device and package therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7978016B2 (en) 2008-08-19 2011-07-12 Nihon Dempa Kogyo Co., Ltd Crystal oscillator
JP2016066877A (en) * 2014-09-24 2016-04-28 セイコーエプソン株式会社 Oscillator, electronic equipment, and mobile body

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