JP2007180701A - Piezoelectric oscillator and its manufacturing method - Google Patents

Piezoelectric oscillator and its manufacturing method Download PDF

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JP2007180701A
JP2007180701A JP2005374495A JP2005374495A JP2007180701A JP 2007180701 A JP2007180701 A JP 2007180701A JP 2005374495 A JP2005374495 A JP 2005374495A JP 2005374495 A JP2005374495 A JP 2005374495A JP 2007180701 A JP2007180701 A JP 2007180701A
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integrated circuit
circuit element
piezoelectric vibration
piezoelectric
wiring board
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Hiroyuki Yotsutsuka
裕之 四塚
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Kyocera Crystal Device Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a piezoelectric oscillator having a structure of which thickness is suitably reduced, and to provide a method for manufacturing the piezoelectric oscillator which is easy to handle and superior in productivity. <P>SOLUTION: In the piezoelectric oscillator, which is composed of a piezoelectric vibrating element, an integrated circuit element internally having at least an oscillation circuit provided with an electrode pad for mounting the piezoelectric vibrating element, a wiring board on which the integrated circuit element is mounted, and a cover body in a nearly box shape for airtightly sealing the piezoelectric vibrating element and integrated circuit element, a space part is formed between the integrated circuit element and a wiring board, the electrode pad for mounting the piezoelectric vibrating element is formed on an integrated circuit element surface facing the space part, and the piezoelectric vibrating element is mounted on the electrode pad for mounting the piezoelectric vibrating element. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、携帯用通信機器等の電子機器に用いられる圧電発振器及びその製造方法に関するものである。   The present invention relates to a piezoelectric oscillator used in an electronic device such as a portable communication device and a method for manufacturing the same.

以前より、携帯用通信機器等の電子機器に組み込まれるタイミングデバイスとして温度補償機能を内蔵したような水晶発振器(TCXO)等の圧電発振器が幅広く用いられている。   For some time, piezoelectric oscillators such as crystal oscillators (TCXO) having a built-in temperature compensation function have been widely used as timing devices incorporated in electronic devices such as portable communication devices.

かかる従来の圧電発振器の概略としては、例えば図5に示すように、内部に圧電振動素子としての水晶振動素子54が収容されている第1の容器体51を、外側底面に複数個の外部接続用電極端子55を設け、内部に水晶振動素子53からの発振出力を各種制御するための発振回路や温度補償回路等が内蔵されている集積回路素子52を収容した第2の容器体53上に重ね合わせる形態で配置し、第1の容器体51の外側底面に形成された第2の容器体接続用電極端子56と、第2の容器体53の側壁部頂面に形成された第1の容器体接続用電極端子57とを、半田等の導電性接合材を介して導通固着した構造のものが知られている。   As an outline of such a conventional piezoelectric oscillator, for example, as shown in FIG. 5, a first container body 51 in which a crystal vibration element 54 as a piezoelectric vibration element is accommodated is connected to a plurality of external connections on the outer bottom surface. Electrode terminal 55 is provided on a second container body 53 containing an integrated circuit element 52 in which an oscillation circuit, a temperature compensation circuit, and the like for controlling various oscillation outputs from the crystal oscillation element 53 are housed. It arrange | positions in the form which overlaps, The 2nd container body connection electrode terminal 56 formed in the outer bottom face of the 1st container body 51, and the 1st formed in the side wall part top surface of the 2nd container body 53 There is known a structure in which the container body connection electrode terminal 57 is conductively fixed through a conductive bonding material such as solder.

このような構造の圧電発振器の組み立て工程中おいて、第1の容器体51の開口部は、金属製の蓋体58を従来周知のシーム溶接(抵抗溶接)等で第1の容器体51の側壁部頂面に接合することにより塞がれ、これによって第1の容器体51内に搭載された水晶振動素子54が気密に封止される。   During the assembly process of the piezoelectric oscillator having such a structure, the opening of the first container body 51 is formed by attaching a metal lid 58 to the first container body 51 by a conventionally known seam welding (resistance welding) or the like. The quartz vibration element 54 mounted in the first container body 51 is hermetically sealed by being bonded to the top surface of the side wall portion.

また、このような従来の圧電発振器の製造方法としては、通常、第1の容器体51と第2の容器体53のみを、複数個の容器体形成領域をマトリックス状に配列形成した容器体ウエハから、容器体形成領域外周に沿って切断して同時に個々の容器体を複数得る手法によって製作し、分割切断後に得られた個々の第1の容器体51及び第2の容器体53に、それぞれ水晶振動素子54や集積回路素子52を個別に搭載し、各種工程を経た後、両者を接合して圧電発振器を組み立てる方法を用いていた。   In addition, as a method for manufacturing such a conventional piezoelectric oscillator, normally, only a first container body 51 and a second container body 53 are used, and a container body wafer in which a plurality of container body formation regions are arranged in a matrix. From each of the first container body 51 and the second container body 53 obtained by dividing and cutting along the outer periphery of the container body forming region and simultaneously obtaining a plurality of individual container bodies. A method of assembling a piezoelectric oscillator by mounting the crystal resonator element 54 and the integrated circuit element 52 individually and joining them together after various processes has been used.

上述したような圧電発振器、及び圧電発振器の製造方法については、下記のような先行技術文献に開示がある。
特許第2974622号公報 特開2005−94241号公報
The piezoelectric oscillator and the method for manufacturing the piezoelectric oscillator as described above are disclosed in the following prior art documents.
Japanese Patent No. 2974622 JP-A-2005-94241

尚、出願人は上記した先行技術文献の情報で特定される先行技術文献以外には、本発明に関連する先行技術文献を、本件出願時までに発見するに至らなかった。   In addition, the applicant has not found any prior art documents related to the present invention by the time of filing of the present application other than the prior art documents specified by the information of the above prior art documents.

しかしながら、上述した従来の圧電発振器のような構造では、圧電振動素子が搭載されている第1の容器体51と、集積回路素子52が搭載されている第2の容器体53とを、縦方向に積み上げて組み立てたものであり、圧電発振器全体としての厚み寸法が増加してしまう虞がある。したがって、圧電発振器の実装面積を小さく抑えたまま、圧電発振器を低背化(薄型化)する要求に対応させることが困難となる可能性があるという欠点を有していた。   However, in the structure like the conventional piezoelectric oscillator described above, the first container body 51 on which the piezoelectric vibration element is mounted and the second container body 53 on which the integrated circuit element 52 is mounted are arranged in the vertical direction. The thickness of the piezoelectric oscillator as a whole may increase. Therefore, there is a drawback that it may be difficult to meet the demand for reducing the height (thinning) of the piezoelectric oscillator while keeping the mounting area of the piezoelectric oscillator small.

また、上述した圧電発振器の製造方法では、第2の容器体を個片に分割切断した後で、集積回路素子を内部に搭載する工程や、第1の容器体を第2の容器体上に搭載する工程において、その工程が完了するまでの間、第2の容器体を個々にキャリア等で保持しておく必要があり、圧電発振器組み立て作業が煩雑である上に、保持キャリア等の製造設備が別途必要になり、これによっても圧電発振器の生産性が低下する虞があるという欠点を有していた。   In the piezoelectric oscillator manufacturing method described above, after the second container body is divided and cut into individual pieces, the step of mounting the integrated circuit element inside, or the first container body is placed on the second container body. In the mounting process, it is necessary to individually hold the second container body with a carrier or the like until the process is completed, and the assembly work of the piezoelectric oscillator is complicated, and the manufacturing equipment for the holding carrier and the like However, this has the disadvantage that the productivity of the piezoelectric oscillator may be lowered.

本発明は上記欠点に鑑み案出されたもので、その目的は、薄型化に適した構造の圧電発振器及び取り扱いが簡便で且つ生産性にも優れたその圧電発振器の製造方法を提供することにある。   The present invention has been devised in view of the above-described drawbacks, and an object of the present invention is to provide a piezoelectric oscillator having a structure suitable for thinning and a method for manufacturing the piezoelectric oscillator that is easy to handle and excellent in productivity. is there.

本発明に係る圧電発振器は、圧電振動素子と、この圧電振動素子を搭載する為の圧電振動素子搭載用電極パッドを設けてなる少なくとも発振回路を内蔵した集積回路素子と、この集積回路素子を搭載してなる配線基板と、圧電振動素子及び集積回路素子を気密封止するための概略箱形状の蓋体とで構成される圧電発振器において、
上記集積回路素子と配線基板との間に空間部が形成されており、この空間部に面する集積回路素子表面に圧電振動素子搭載用電極パッドが形成されており、この圧電振動素子搭載用電極パッドに圧電振動素子が搭載されていることを特徴とするものである。
A piezoelectric oscillator according to the present invention includes a piezoelectric vibration element, an integrated circuit element including at least an oscillation circuit provided with a piezoelectric vibration element mounting electrode pad for mounting the piezoelectric vibration element, and the integrated circuit element. In a piezoelectric oscillator composed of a wiring board and a substantially box-shaped lid for hermetically sealing the piezoelectric vibration element and the integrated circuit element,
A space portion is formed between the integrated circuit element and the wiring board, and an electrode pad for mounting a piezoelectric vibration element is formed on the surface of the integrated circuit element facing the space portion. A piezoelectric vibration element is mounted on the pad.

又、本発明に係る圧電発振器の製造方法は、
一方の主面に基板接続用電極パッドと圧電振動素子搭載用電極パッドを形成した複数の集積回路素子形成領域をマトリックス状に連接形成してなる集積回路素子ウエハ上で、各々の集積回路素子形成領域の圧電振動素子搭載用電極パッドに圧電振動素子を搭載し、且つ基板接続用電極パッド上に導電性接合材を形成する工程Aと、
圧電振動素子が搭載された集積回路素子ウエハを個々の集積回路素子形成領域外周に沿って切断し、圧電振動素子を搭載した個々の集積回路素子を形成する工程Bと、
複数の配線基板領域を有するマスター基板上に、圧電振動素子が搭載されている集積回路素子を、集積回路素子の他方の主面を保持しつつ圧電振動素子をマスター基板側に向けた形態で各配線基板領域内に個々に配置し、圧電振動素子表面をマスター基板表面及び集積回路素子表面に接触させない形態で導電性接合材により個々の集積回路素子とマスター基板とを固着接続する工程Cと、
概略箱形状の蓋体を、マスター基板に搭載した圧電振動素子が搭載されている個々の該集積回路素子を覆う形態で被せ、集積回路素子が内蔵された蓋体内を気密に封止する工程Dと、
配線基板領域外周に沿ってマスター基板を切断して、複数個の圧電発振器を個々に得る工程Eとを具備することを特徴とするものである。
In addition, a method for manufacturing a piezoelectric oscillator according to the present invention includes
Each integrated circuit element is formed on an integrated circuit element wafer formed by connecting a plurality of integrated circuit element forming regions in a matrix form on one main surface where electrode pads for substrate connection and electrode pads for mounting piezoelectric vibration elements are formed. Mounting the piezoelectric vibration element on the piezoelectric vibration element mounting electrode pad in the region, and forming a conductive bonding material on the substrate connection electrode pad; and
Cutting the integrated circuit element wafer on which the piezoelectric vibration element is mounted along the periphery of each integrated circuit element forming region to form individual integrated circuit elements on which the piezoelectric vibration element is mounted; and
An integrated circuit element on which a piezoelectric vibration element is mounted on a master substrate having a plurality of wiring board regions is arranged in a form in which the piezoelectric vibration element is directed to the master substrate side while holding the other main surface of the integrated circuit element. A step C in which the individual integrated circuit elements and the master substrate are fixedly connected to each other by a conductive bonding material in a form in which the piezoelectric vibration element surface is not brought into contact with the master substrate surface and the integrated circuit element surface;
Step D for covering the individual integrated circuit elements on which the piezoelectric vibration elements mounted on the master substrate are covered with a substantially box-shaped cover body so as to hermetically seal the lid body in which the integrated circuit elements are embedded. When,
And a step E of individually obtaining a plurality of piezoelectric oscillators by cutting the master substrate along the outer periphery of the wiring board region.

本発明の圧電発振器によれば、集積回路素子と配線基板との間に導電性接合材により所定の間隔の空間部が形成されており、この空間部に面する集積回路素子表面に圧電振動素子搭載用電極パッドが形成されており、この圧電振動素子搭載用電極パッドに圧電振動素子が搭載されている形態によって、従来例に比し圧電発振器全体構造を著しく薄く形成することが可能となり、圧電発振器の薄型化に供することが可能となる。   According to the piezoelectric oscillator of the present invention, the space portion having a predetermined interval is formed between the integrated circuit element and the wiring board by the conductive bonding material, and the piezoelectric vibration element is formed on the surface of the integrated circuit element facing the space portion. A mounting electrode pad is formed, and the piezoelectric vibration element mounted on the electrode pad for mounting the piezoelectric vibration element makes it possible to make the entire structure of the piezoelectric oscillator significantly thinner than the conventional example. It is possible to make the oscillator thinner.

また、圧電振動素子が集積回路素子の表面に実装されているので、圧電振動素子に形成されている励振用電極が集積回路素子の圧電振動素子接続用電極パッドに直接接続されるようになるため、集積回路素子と圧電振動素子とを別の容器体に搭載する場合に比し、圧電振動素子と集積回路素子内電子回路とを接続する配線の長さが短縮されて配線抵抗に起因した容量の発生を有効に防止することができ、設計値に近い発振特性が得られるようになる。   In addition, since the piezoelectric vibration element is mounted on the surface of the integrated circuit element, the excitation electrode formed on the piezoelectric vibration element is directly connected to the electrode pad for connecting the piezoelectric vibration element of the integrated circuit element. Compared to the case where the integrated circuit element and the piezoelectric vibration element are mounted in different containers, the length of the wiring connecting the piezoelectric vibration element and the electronic circuit in the integrated circuit element is shortened, and the capacitance caused by the wiring resistance. Can be effectively prevented, and an oscillation characteristic close to the design value can be obtained.

更に本発明の圧電デバイスの製造方法によれば、マスター基板が圧電発振器製造工程中キャリア部材として機能するため、別途キャリア部材を用意し、キャリア部材にマスター基板を分割して得た個々の配線基板を搭載するといった煩雑な作業が一切不要となり、圧電デバイスの生産性を飛躍的に向上させることができる。   Furthermore, according to the method for manufacturing a piezoelectric device of the present invention, since the master substrate functions as a carrier member during the piezoelectric oscillator manufacturing process, an individual wiring substrate obtained by separately preparing a carrier member and dividing the master substrate into the carrier member No complicated work such as mounting is required, and the productivity of piezoelectric devices can be dramatically improved.

又、圧電振動素子及び導電性接合材を一方の主面上に搭載或いは形成した個々の集積回路素子をマスター基板の各配線基板領域内の所定の位置に配置する際に、集積回路素子の他方の主面をチャッキング(例えば真空吸着盤を用いた真空チャッキング)することで配置位置まで搬送できるので、圧電振動素子を搭載した集積回路素子の側面を挟み込む形態での搬送方法を用いずにすみ、集積回路素子に不要且つ有害な応力をかけることがなくなるため、集積回路素子の不具合による圧電発振器の不良品発生を低減できる。   Further, when the individual integrated circuit elements on which the piezoelectric vibration element and the conductive bonding material are mounted or formed on one main surface are arranged at predetermined positions in each wiring board region of the master substrate, the other of the integrated circuit elements is arranged. Can be transported to the placement position by chucking the main surface (for example, vacuum chucking using a vacuum suction disk), without using a transport method in which the side surface of the integrated circuit element on which the piezoelectric vibration element is mounted is sandwiched In fact, since unnecessary and harmful stress is not applied to the integrated circuit element, it is possible to reduce the occurrence of defective piezoelectric oscillators due to the defect of the integrated circuit element.

以上のようなことから、本発明の圧電発振器及びその製造方法は、圧電発振器の実装面積を小さく抑えたまま、薄型で且つ特性の良好な圧電発振器を提供し、更に生産性が良く製造歩留まりが良い圧電発振器の製造方法を提供できる効果を奏する。   As described above, the piezoelectric oscillator and the manufacturing method thereof according to the present invention provide a thin piezoelectric oscillator with good characteristics while keeping the mounting area of the piezoelectric oscillator small, and further improve the productivity and the manufacturing yield. There exists an effect which can provide the manufacturing method of a good piezoelectric oscillator.

以下、本発明を添付図面に基づいて詳細に説明する。尚、各図においての同一の符号は同じ対象を示すものとする。又、各図では、説明を明りょうにするため部品或いは構造体の一部を図示せず、更に図示した寸法も一部誇張している。特に各図面の厚み寸法は著しく誇張して図示している。   Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. In addition, the same code | symbol in each figure shall show the same object. Moreover, in each figure, in order to clarify explanation, a part of a part or a structure is not shown, and the illustrated dimension is also exaggerated in part. In particular, the thickness dimension of each drawing is greatly exaggerated.

図1は本発明の一実施形態に係る圧電発振器を表面実装型の水晶発振器に適用した例を示す分解斜視図、図2は、図1の記載の集積回路素子2を配線基板対向主面側から示した外観斜視図である。又、図3は、図1記載の水晶発振器を組み立てた場合の概略断面図である。これらの図に示す水晶発振器は、大略的に、配線基板1と、集積回路素子2と、圧電振動素子としての水晶振動素子3と、蓋体4と、導電性接合材5とで構成されている。   FIG. 1 is an exploded perspective view showing an example in which a piezoelectric oscillator according to an embodiment of the present invention is applied to a surface-mount type crystal oscillator, and FIG. 2 shows an integrated circuit element 2 shown in FIG. It is the external appearance perspective view shown from. FIG. 3 is a schematic sectional view when the crystal oscillator shown in FIG. 1 is assembled. The crystal oscillators shown in these drawings are roughly composed of a wiring board 1, an integrated circuit element 2, a crystal vibration element 3 as a piezoelectric vibration element, a lid 4, and a conductive bonding material 5. Yes.

主面外形が矩形であり且つ平板形状の配線基板1の他方の主面(外部実装基板に対向する面)には複数個の外部接続用電極端子6が設けられている。本実施形態においては配線基板1の他方の主面四隅にそれぞれ形成される4個の外部接続用電極端子6が設けられており、それぞれ電源電圧端子、グランド端子、発振出力端子、発振制御端子として機能する。これらの外部接続用電極端子6は、水晶発振器を外部実装基板(マザーボード)等の外部電気回路に搭載する際、半田付け等によって外部電気回路の回路配線と電気的に接続される。   A plurality of external connection electrode terminals 6 are provided on the other main surface (the surface facing the external mounting substrate) of the flat wiring board 1 having a rectangular main surface. In the present embodiment, four external connection electrode terminals 6 formed at the four corners of the other main surface of the wiring board 1 are provided, respectively, as a power supply voltage terminal, a ground terminal, an oscillation output terminal, and an oscillation control terminal. Function. These external connection electrode terminals 6 are electrically connected to circuit wiring of the external electric circuit by soldering or the like when the crystal oscillator is mounted on an external electric circuit such as an external mounting substrate (motherboard).

なお、配線基板1の主構造材は、例えば、ガラス−セラミック、アルミナセラミックス等のセラミック材料や樹脂等の有機材料から形成されている。   The main structural material of the wiring board 1 is formed of, for example, a ceramic material such as glass-ceramic or alumina ceramic, or an organic material such as resin.

また、配線基板1の一方の主面には、バンプによる導電性接合材5を介して所望の間隔を有する空間部14を形成した形態で集積回路素子2が配置されており、水晶振動素子3は集積回路素子2の配線基板対向主面に実装され空間部14内に位置するように配置されている。集積回路素子2の配線基板対向主面に設けられる圧電振動素子搭載用電極パッド7に水晶振動素子3に形成された励振用電極が導電性接着剤を介して電気的に接続されている。更に、配線基板1の一方の主面の全外周縁部には封止用導体パターン9が被着形成されている。   Further, the integrated circuit element 2 is arranged on one main surface of the wiring board 1 in a form in which a space portion 14 having a desired interval is formed via a conductive bonding material 5 made of bumps. Is mounted on the main surface of the integrated circuit element 2 facing the wiring board and is disposed so as to be positioned in the space 14. Excitation electrodes formed on the crystal vibration element 3 are electrically connected to the piezoelectric vibration element mounting electrode pads 7 provided on the main surface of the integrated circuit element 2 facing the wiring board via a conductive adhesive. Further, a sealing conductor pattern 9 is deposited on the entire outer peripheral edge of one main surface of the wiring board 1.

尚、配線基板1は、アルミナセラミックスから成る場合、例えば、アルミナセラミックスの原料粉末に適当な有機溶剤等を添加・混合した上、これを従来周知のドクターブレード法等で所定形状に成形することによりセラミックグリーンシートを得、その表面等に接続パッドや封止用導体パターンとなる導体ペーストを所定パターンに塗布し、これを複数枚積層してプレス成形した後、高温で焼成することによって製作されている。   When the wiring board 1 is made of alumina ceramic, for example, an appropriate organic solvent is added to and mixed with the raw material powder of the alumina ceramic, and then formed into a predetermined shape by a conventionally known doctor blade method or the like. It is manufactured by obtaining ceramic green sheets, applying conductive paste to be a connection pad or sealing conductor pattern on the surface, etc. to a predetermined pattern, laminating a plurality of them, press molding, and firing at high temperature Yes.

配線基板1の一方の主面上には、フリップチップ型の集積回路素子2が搭載されている。この集積回路素子2の配線基板対向主面には、水晶振動素子3が実装されており、かかる水晶振動素子3は、人工水晶体より所定のカットアングルで切り出し外形加工した矩形平板状の水晶片の両主面に一対の励振用電極を被着形成してなり、外部からの変動電圧が一対の励振用電極を介して水晶片に印加されると、所定の振動モード及び周波数で振動を起こす。尚、この水晶振動素子3は、一対の励振用電極を集積回路素子2の配線基板対向主面に設けた対応する圧電振動素子搭載用電極パッド7に導電性接着剤を介して電気的に接続させることにより、集積回路素子2の配線基板対向主面上に実装され、この状態で集積回路基板2と配線基板1の間に形成された空間部14内に配置される。   On one main surface of the wiring board 1, a flip-chip type integrated circuit element 2 is mounted. A crystal resonator element 3 is mounted on the main surface of the integrated circuit element 2 facing the wiring board, and the crystal resonator element 3 is a rectangular plate-shaped crystal piece that is cut out from the artificial crystal at a predetermined cut angle and processed in outline. A pair of excitation electrodes are deposited on both main surfaces, and when an externally varying voltage is applied to the crystal piece via the pair of excitation electrodes, vibration occurs in a predetermined vibration mode and frequency. The quartz resonator element 3 is electrically connected to a corresponding piezoelectric resonator element mounting electrode pad 7 provided with a pair of excitation electrodes on the main surface of the integrated circuit element 2 facing the wiring board via a conductive adhesive. As a result, it is mounted on the main surface of the integrated circuit element 2 facing the wiring board, and in this state, it is disposed in the space 14 formed between the integrated circuit board 2 and the wiring board 1.

このように、水晶振動素子3を発振用集積回路素子2の配線基板対向主面上に実装させておけば、水晶振動素子3の励振用電極が集積回路素子2の圧電振動素子搭載用電極パッド7に直接接続されることになるため、集積回路素子2と水晶振動素子3を別の容器体内に搭載する場合の圧電発振器に比し、水晶振動素子3と集積回路素子2内に内蔵されている発振回路等の電子回路とを電気的に接続する配線の長さは著しく短縮され、配線抵抗に起因した容量の発生を有効に防止することができる。これにより、設計値理論値に近い発振特性が得られる。   In this way, if the crystal resonator element 3 is mounted on the main surface of the oscillation integrated circuit element 2 facing the wiring board, the excitation electrode of the crystal oscillator element 3 is the electrode pad for mounting the piezoelectric resonator element of the integrated circuit element 2. 7, the integrated circuit element 2 and the crystal vibration element 3 are built in the crystal vibration element 3 and the integrated circuit element 2 as compared with the piezoelectric oscillator in the case where the integrated circuit element 2 and the crystal vibration element 3 are mounted in separate containers. The length of the wiring that electrically connects the electronic circuit such as the oscillation circuit is remarkably shortened, and the generation of capacitance due to the wiring resistance can be effectively prevented. Thereby, an oscillation characteristic close to the design value theoretical value can be obtained.

集積回路素子2内には、単結晶シリコン等から成る基体の下面に、周囲の温度状態を検知する感温素子(サーミスタ)、水晶振動素子3の温度特性を補償する温度補償データを格納するとともに該温度補償データに基づいて水晶振動素子3の振動特性を温度変化に応じて補正する温度補償回路や、この温度補償回路に接続されて所定の発振出力を生成する発振回路等の電子回路が設けられており、前述した発振回路で生成された発振出力は、外部実装基板側に出力された後、例えば、他の電子部品や電子機器のクロック信号やタイミング信号等の基準信号として利用されることとなる。   In the integrated circuit element 2, temperature compensation data for compensating the temperature characteristics of the temperature sensing element (thermistor) for detecting the ambient temperature state and the crystal vibration element 3 are stored on the lower surface of the substrate made of single crystal silicon or the like. An electronic circuit such as a temperature compensation circuit that corrects the vibration characteristics of the crystal resonator element 3 according to a temperature change based on the temperature compensation data and an oscillation circuit that is connected to the temperature compensation circuit and generates a predetermined oscillation output is provided. The oscillation output generated by the oscillation circuit described above is output to the external mounting board side and then used as a reference signal such as a clock signal or timing signal of another electronic component or electronic device. It becomes.

尚、集積回路素子2は、単結晶シリコンのインゴットを所定厚みにスライスしてシリコンウエハを得、その一主面に従来周知の半導体製造技術を採用し、発振回路等の電子回路や各種電極パッド等を、マトリックス状に配列形成した複数の集積回路素子形成領域毎に製作された一体の集積回路素子ウエハ10を、各集積回路素子形成領域外周に沿って切断分割することによって得られる。また、集積回路素子2に形成された基板接続用電極パッド11にはバンプ等の導電性接合材5が配され、この導電性接合材5によって、集積回路素子2の配線基板対向主面に形成された基板接続用電極パッド11と配線基板1の一方の主面に形成された集積回路素子接続用電極パッド12とが電気的且つ機械的に接続している。   The integrated circuit element 2 is obtained by slicing a single crystal silicon ingot to a predetermined thickness to obtain a silicon wafer, and adopting a well-known semiconductor manufacturing technique on one main surface thereof, an electronic circuit such as an oscillation circuit and various electrode pads. And the like are obtained by cutting and dividing the integrated integrated circuit element wafer 10 manufactured for each of the plurality of integrated circuit element forming regions arranged in a matrix along the outer periphery of each integrated circuit element forming region. A conductive bonding material 5 such as a bump is disposed on the substrate connection electrode pad 11 formed on the integrated circuit element 2, and the conductive bonding material 5 is formed on the main surface of the integrated circuit element 2 facing the wiring board. The substrate connection electrode pads 11 and the integrated circuit element connection electrode pads 12 formed on one main surface of the wiring substrate 1 are electrically and mechanically connected.

導電性接合材5は、配線基板1と集積回路素子2を機械的並びに電気的に接続する為に用いるのと同時に、配線基板1と集積回路素子2との間に、集積回路素子2に搭載されている水晶振動素子3が、配線基板1の表面及び集積回路素子2表面に接触することのない間隔の空間部14を維持する機能を有する。また、導電性接合材5はバンプの他にロウ材並びに金属部材でも構わない。   The conductive bonding material 5 is used for mechanically and electrically connecting the wiring board 1 and the integrated circuit element 2, and at the same time, mounted on the integrated circuit element 2 between the wiring board 1 and the integrated circuit element 2. The crystal resonator element 3 that has been provided has a function of maintaining a space portion 14 that is not in contact with the surface of the wiring substrate 1 and the surface of the integrated circuit element 2. The conductive bonding material 5 may be a brazing material or a metal member in addition to the bump.

このように、集積回路素子2と配線基板1との間に形成した空間部14に水晶振動素子3を配置する構成することで、従来例に比し圧電(水晶)発振器全体を薄く形成することができ、圧電(水晶)発振器の薄型化に供することが可能となる。   In this way, by arranging the crystal resonator element 3 in the space portion 14 formed between the integrated circuit element 2 and the wiring substrate 1, the entire piezoelectric (crystal) oscillator can be formed thinner than in the conventional example. Therefore, the piezoelectric (crystal) oscillator can be thinned.

蓋体4は、例えば、42アロイやコバール,リン青銅等の金属から成る、厚み60μm〜100μmの金属板を、従来周知の板金加工にて開口部周囲につば状の配線基板接合部を有する概略箱形状に加工することによって製作される。蓋体4は、配線基板1に配置固着した水晶振動素子5を搭載した集積回路素子2を内部に収容して気密封止するためのものであり、更に、蓋体4は蓋体4の配線基板接合部表面に形成した封止部材13及び封止用導体パターン9を介して配線基板1の他方の主面に形成させた外部接続用電極端子6のうちのグランド端子に電気的に接続される。これにより、水晶発振器の使用時には蓋体4はグランド電位に保持されることとなり、水晶振動素子3が蓋体4の電磁シールド効果によって外部からの不要な電気的作用、例えばノイズ等から良好に保護される。尚、封止部材13としては、例えば、AuやAu−Sn合金、半田等の金属から成るロウ材が好適に用いられる。   The lid 4 is an outline having, for example, a metal plate made of metal such as 42 alloy, Kovar, phosphor bronze, etc., having a thickness of 60 μm to 100 μm, and having a brim-like wiring board joint around the opening by a conventionally known sheet metal processing. Manufactured by processing into a box shape. The lid 4 is for accommodating the integrated circuit element 2 on which the crystal resonator element 5 arranged and fixed on the wiring substrate 1 is mounted and hermetically sealed. Further, the lid 4 is a wiring of the lid 4. Electrically connected to the ground terminal of the external connection electrode terminals 6 formed on the other main surface of the wiring board 1 through the sealing member 13 and the sealing conductor pattern 9 formed on the substrate bonding portion surface. The As a result, the lid 4 is held at the ground potential when the crystal oscillator is used, and the quartz resonator element 3 is well protected from unnecessary external electrical action such as noise due to the electromagnetic shielding effect of the lid 4. Is done. As the sealing member 13, for example, a brazing material made of metal such as Au, Au—Sn alloy, or solder is preferably used.

次に、上述した水晶発振器(圧電発振器)の製造方法について、各工程を図4の(a)乃至(e)を用いて説明する。   Next, the manufacturing method of the above-described crystal oscillator (piezoelectric oscillator) will be described with reference to FIGS. 4A to 4E.

(工程A)
初めに、図4(a)に示すような、複数個の集積回路素子形成領域をマトリックス状に配列形成し、その個々の集積回路素子形成領域の一方の主面上に、圧電振動素子搭載用電極パッド7と基板接続用電極パッド11を形成した一体の集積回路素子ウエハ10を準備する。集積回路素子ウエハ10は、単結晶シリコンのインゴットを所定厚みにスライスしてシリコンウエハを得、その一主面に従来周知の半導体製造技術を採用し、発振回路等の電子回路や圧電振動素子搭載用電極パッド7や基板接続用電極パッド11を形成することによって製作される。
(Process A)
First, as shown in FIG. 4 (a), a plurality of integrated circuit element formation regions are arranged in a matrix, and on one main surface of each of the integrated circuit element formation regions, a piezoelectric vibration element is mounted. An integrated integrated circuit element wafer 10 on which electrode pads 7 and substrate connection electrode pads 11 are formed is prepared. The integrated circuit element wafer 10 is obtained by slicing a single crystal silicon ingot to a predetermined thickness to obtain a silicon wafer, and adopting a well-known semiconductor manufacturing technique on one main surface thereof, mounting an electronic circuit such as an oscillation circuit or a piezoelectric vibration element. This is manufactured by forming electrode pads 7 and substrate connection electrode pads 11.

そして、集積回路素子ウエハ10の各集積回路素子形成領域の一方の主面上に形成された圧電振動素子搭載用電極パッド7上に水晶振動素子3が搭載され、水晶振動素子3の励振用電極(図示せず)と集積回路素子ウエハ10上面の圧電振動素子搭載用電極パッド7とが導電性接着剤を介して電気的且つ機械的に接続される。又、各基板接続用電極パッド11上にはバンプによる導電性接合材5を形成する。尚、本実施形態では、マトリクス状に配された個々の集積回路素子形成領域の間に所定の捨代領域を設けている。   Then, the crystal vibration element 3 is mounted on the piezoelectric vibration element mounting electrode pad 7 formed on one main surface of each integrated circuit element formation region of the integrated circuit element wafer 10, and the excitation electrode of the crystal vibration element 3 is mounted. (Not shown) and the piezoelectric vibration element mounting electrode pad 7 on the upper surface of the integrated circuit element wafer 10 are electrically and mechanically connected via a conductive adhesive. Further, a conductive bonding material 5 is formed by bumps on each substrate connection electrode pad 11. In the present embodiment, predetermined spare areas are provided between the individual integrated circuit element formation areas arranged in a matrix.

(工程B)
次に図4(b)が示すように、各集積回路素子形成領域に水晶振動素子3が搭載された集積回路素子ウエハ10を、集積回路素子形成領域外周に沿ってダイサーなどで切断し、捨代領域を分離し、水晶振動素子3及び導電性接合材5を表面に搭載した複数個の集積回路素子2を得る。
(Process B)
Next, as shown in FIG. 4B, the integrated circuit element wafer 10 on which the crystal resonator element 3 is mounted in each integrated circuit element formation region is cut with a dicer along the outer periphery of the integrated circuit element formation region and discarded. A plurality of integrated circuit elements 2 on which the crystal resonator element 3 and the conductive bonding material 5 are mounted on the surface are obtained by separating the substitution area.

(工程C)
次に、図4(c)に示すように、複数個の配線基板形成領域をマトリックス状に配列形成し、その個々の配線基板形成領域の一方の主面上に集積回路素子搭載用電極パッド12及び封止用導体パターン9と、他方の主面上に外部接続用電極端子6を形成した一体のマスター基板15を準備し、水晶振動素子3が搭載されている集積回路素子2を、集積回路素子2の他方の主面を保持しつつ、水晶振動素子3をマスター基板15側に向けた形態で各配線基板領域内に個々に配置し、集積回路素子2と配線基板形成領域との間に空間部14を形成し水晶振動素子3表面をマスター基板15表面及び集積回路素子2表面に接触させない形態で導電性接合材5により個々の集積回路素子2とマスター基板15とを固着接続する。尚、本実施形態では、マトリクス状に配された個々の配線基板形成領域の間に所定の捨代領域を設けている。
(Process C)
Next, as shown in FIG. 4C, a plurality of wiring board formation regions are arranged in a matrix and an integrated circuit element mounting electrode pad 12 is formed on one main surface of each wiring board formation region. And an integrated master substrate 15 in which the external connection electrode terminal 6 is formed on the other main surface, and the integrated circuit element 2 on which the crystal resonator element 3 is mounted is integrated circuit While holding the other main surface of the element 2, the crystal resonator element 3 is individually arranged in each wiring board region in a form facing the master substrate 15, and between the integrated circuit element 2 and the wiring board forming region. The integrated circuit element 2 and the master substrate 15 are fixedly connected by the conductive bonding material 5 in a form in which the space portion 14 is formed and the surface of the crystal resonator element 3 is not brought into contact with the surface of the master substrate 15 and the surface of the integrated circuit element 2. In the present embodiment, a predetermined spare area is provided between the individual wiring board forming areas arranged in a matrix.

マスター基板15は、上述した配線基板1と同じ材料、即ち、ガラス−セラミック、アルミナセラミックス等のセラミック材料からなる平板状基板であり、例えば、アルミナセラミックス等から成るセラミック材料粉末に適当な有機溶剤等を添加・混合して得たセラミックグリーンシートの表面等に接続用電極パッドや外部接続用電極端子6、封止用導体パターン9等となる導体ペーストを所定パターンに印刷・塗布するとともに、これを複数枚積層してプレス成形した後、高温で焼成することによって製作される。   The master substrate 15 is a flat substrate made of the same material as the wiring substrate 1 described above, that is, a ceramic material such as glass-ceramic and alumina ceramics. For example, an organic solvent suitable for a ceramic material powder made of alumina ceramics or the like. A conductive paste to be used as a connection electrode pad, external connection electrode terminal 6, sealing conductor pattern 9 or the like is printed and applied in a predetermined pattern on the surface of the ceramic green sheet obtained by adding and mixing It is manufactured by laminating a plurality of sheets and press-molding them, followed by firing at a high temperature.

尚、本実施例では、水晶振動素子3及び導電性接合材5を一方の主面上に搭載或いは形成した個々の集積回路素子2は、集積回路素子2の他方の主面を、真空吸着盤16を用いた真空チャッキングにより保持され、マスター基板15の各配線基板領域内の所定の位置まで搬送され配置する。この方法により水晶振動素子3を搭載した集積回路素子2の側面を挟み込む形態での搬送方法を用いずにすみ、集積回路素子2に不要且つ有害な応力をかけることがなくなるため、集積回路素子2の不具合による圧電発振器の不良品発生を低減できる。   In the present embodiment, each integrated circuit element 2 in which the crystal resonator element 3 and the conductive bonding material 5 are mounted or formed on one main surface has the other main surface of the integrated circuit element 2 attached to the vacuum suction disk. 16 is held by vacuum chucking, and transported to a predetermined position in each wiring board region of the master board 15 and arranged. This method eliminates the need to use a transport method in which the side surface of the integrated circuit element 2 on which the crystal resonator element 3 is mounted is sandwiched, and eliminates unnecessary and harmful stress on the integrated circuit element 2. The generation of defective piezoelectric oscillators due to the above problems can be reduced.

(工程D)
図4(d)が示すように、開口部周囲につば状の配線基板接合部を有する概略箱形状の蓋体4を、蓋体4の配線基板接合部に形成した封止部材13とマスター基板15の各配線基板形成領域に形成した封止用導電パターン9を合わせつつ、蓋体4の箱状部分を各配線基板形成領域に載置した水晶振動素子3を搭載した集積回路素子2に被せ、封止部材13と封止用導電パターン9を接合することにより、蓋体4内の水晶振動素子3と集積回路素子2を気密封止する。
(Process D)
As shown in FIG. 4D, a sealing member 13 and a master substrate in which a substantially box-shaped lid 4 having a brim-like wiring board joint around the opening is formed at the wiring board joint of the lid 4. The box-shaped portion of the lid 4 is placed on the integrated circuit element 2 on which the crystal resonator element 3 placed on each wiring board formation region is mounted while matching the sealing conductive pattern 9 formed on each wiring board formation area. By bonding the sealing member 13 and the conductive pattern 9 for sealing, the crystal resonator element 3 and the integrated circuit element 2 in the lid 4 are hermetically sealed.

蓋体4は、例えば、42アロイやコバール,リン青銅等の金属から成る、厚み60μm〜100μmの金属板を従来周知の板金加工にて上述した形状に加工することによって製作される。又、蓋体4の配線基板接合部には、ニッケル(Ni)層、金錫(Au−Sn)層とからなる封止部材13を形成する。かかる封止部材13は蓋体4をマスター基板15の各配線基板形成領域に対して接合するためのろう材層として機能するものであり、金錫の組成比率は、例えば、金80%、錫20%に設定され、その厚みは、例えば、10μm〜30μmに設定される。   The lid 4 is manufactured, for example, by processing a metal plate having a thickness of 60 μm to 100 μm made of metal such as 42 alloy, Kovar, or phosphor bronze into the above-described shape by a conventionally known sheet metal processing. Further, a sealing member 13 made of a nickel (Ni) layer and a gold tin (Au—Sn) layer is formed at the wiring board joint portion of the lid 4. The sealing member 13 functions as a brazing material layer for bonding the lid 4 to each wiring board forming region of the master substrate 15. The composition ratio of gold tin is, for example, 80% gold, tin The thickness is set to 20%, and the thickness is set to, for example, 10 μm to 30 μm.

又、個々の蓋体4と配線基板形成領域との具体的な接合方法は、蓋体4を、蓋体4の配線基板接合部に形成した封止部材13とマスター基板15の各配線基板形成領域に形成した封止用導電パターン9を合わせつつ、蓋体4の箱状部分を各配線基板形成領域に載置した水晶振動素子3を搭載した集積回路素子2に被せ後、これを300℃〜350℃の温度に保たれた加熱炉の中に入れ、封止部材13を高温で加熱・溶融させ封止用導電パターン9と接合することによって、個々の蓋体4がマスター基板15に接合される。その後、マスター基板15と蓋体4は徐々に室温まで冷却される。   Further, the specific bonding method between the individual lid 4 and the wiring board formation region is that each of the wiring board formations of the sealing member 13 and the master board 15 in which the lid 4 is formed at the wiring board bonding portion of the lid 4. The box-shaped portion of the lid 4 is put on the integrated circuit element 2 on which the crystal resonator element 3 placed on each wiring board forming area is covered while the sealing conductive pattern 9 formed in the area is matched, and then this is applied to 300 ° C. Each lid 4 is bonded to the master substrate 15 by placing it in a heating furnace maintained at a temperature of ˜350 ° C. and heating and melting the sealing member 13 at a high temperature and bonding it to the conductive pattern 9 for sealing. Is done. Thereafter, the master substrate 15 and the lid 4 are gradually cooled to room temperature.

尚、その他の蓋体と配線基板形成領域との接合方法として、光ビームを蓋体4の配線基板接合部に照射し、前記封止部材13を溶融させることによって、蓋体4をマスター基板の各配線基板形成領域に封止を行う方法がある。このとき、複数個同時に封止をすることできる。   As another bonding method between the lid and the wiring board formation region, the lid 4 is bonded to the master board by irradiating a light beam to the wiring board joint of the lid 4 and melting the sealing member 13. There is a method of sealing each wiring board formation region. At this time, a plurality can be sealed simultaneously.

上述のような水晶発振器は、まず水晶振動素子3を発振用集積回路素子2の下面に搭載し、次に発振用集積回路素子2を下面に実装した水晶振動素子3が収容空間を設けるようにして配線基板1上に導電性部材5を介して載置させ、しかる後、これをNガスやArガス等の不活性ガス雰囲気中または所定の真空度に保たれた真空中で熱処理し、封止部材13で蓋体4を配線基板1の上面に接合することにより組み立てられる。 In the crystal oscillator as described above, the crystal resonator element 3 is first mounted on the lower surface of the oscillation integrated circuit element 2, and then the crystal resonator element 3 having the oscillation integrated circuit element 2 mounted on the lower surface provides an accommodation space. Then, it is placed on the wiring substrate 1 via the conductive member 5, and then heat-treated in an inert gas atmosphere such as N 2 gas or Ar gas or in a vacuum maintained at a predetermined degree of vacuum, The lid 4 is assembled to the upper surface of the wiring board 1 with the sealing member 13.

尚、上述した封止工程は真空中又は不活性ガス雰囲気中で行うのが好ましい。水晶振動素子3が収容される蓋体4内空間内を、不活性ガスを充填しておくことで水晶振動素子3の電気的特性を安定させることが可能となる。また、真空内で封止を行った場合には、水晶振動素子3の電気的特性を安定させることができるとともに、水晶振動素子3のクリスタルインピーダンスを低く抑えることができる。   The sealing step described above is preferably performed in a vacuum or in an inert gas atmosphere. It is possible to stabilize the electrical characteristics of the crystal resonator element 3 by filling the space inside the lid 4 in which the crystal resonator element 3 is accommodated with an inert gas. In addition, when sealing is performed in a vacuum, the electrical characteristics of the crystal resonator element 3 can be stabilized, and the crystal impedance of the crystal resonator element 3 can be kept low.

又、導電性接合材5や封止部材13として半田を用いる場合には、フラックス等の汚染物質を用いることなく酸化膜を良好に除去するために、従来周知の水素還元方式を用いることが好ましい。   When using solder as the conductive bonding material 5 or the sealing member 13, it is preferable to use a conventionally known hydrogen reduction method in order to remove the oxide film satisfactorily without using contaminants such as flux. .

(工程E)
そして、図4(e)に示すように、個々の配線基板形成領域に、水晶振動素子3が搭載された集積回路素子2気密封止したマスター基板15を、個々の配線基板形成領域外周に沿ってダイサーなどで切断し、捨代領域を分離し、水晶振動素子3を搭載した集積回路素子2を蓋体4により気密封止した複数個の圧電発振器を同時に得る。
(Process E)
Then, as shown in FIG. 4E, the integrated circuit element 2 hermetically sealed with the crystal resonator element 3 is hermetically sealed in each wiring board forming area along the outer periphery of each wiring board forming area. A plurality of piezoelectric oscillators in which the integrated circuit element 2 on which the crystal resonator element 3 is mounted is hermetically sealed by the lid 4 are obtained at the same time by cutting with a dicer or the like.

尚、温度補償機能を有する圧電(水晶)発振器の場合は、上記工程のあとに、配線基板1の外表面に設けられる書込制御端子(図示せず)に温度補償データ書込装置のプローブ針を当て、予め測定しておいた水晶振動素子3の温度特性に応じた温度補償データを書き込むことによって発振用集積回路素子2のメモリ内に温度補償データを格納した後、外部実装基板等の外部配線基板上に半田付け等によって搭載され、その温度状態に応じて集積回路素子2の温度補償回路で発振出力を補正しながら、水晶振動素子3の共振周波数に応じた所定の発振信号を出力する。   In the case of a piezoelectric (quartz) oscillator having a temperature compensation function, a probe needle of a temperature compensation data writing device is connected to a write control terminal (not shown) provided on the outer surface of the wiring board 1 after the above process. The temperature compensation data is stored in the memory of the oscillation integrated circuit element 2 by writing the temperature compensation data corresponding to the temperature characteristics of the crystal resonator element 3 measured in advance, and then externally mounted on an external mounting board or the like. Mounted on the wiring board by soldering or the like, and outputs a predetermined oscillation signal corresponding to the resonance frequency of the crystal resonator element 3 while correcting the oscillation output by the temperature compensation circuit of the integrated circuit element 2 according to the temperature state. .

尚、本発明は上述の実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更、改良等が可能である。例えば、上記実施例においては、発振器内に搭載される圧電振動素子の圧電材料として水晶を用いた水晶発振器を例示したが、圧電効果を奏するものであれば、水晶の他に、タンタル酸リチウム、ニオウブ酸リチウムや圧電セラミック等の他の圧電材を圧電振動素子の主材として使用しても構わない。   In addition, this invention is not limited to the above-mentioned embodiment, A various change, improvement, etc. are possible in the range which does not deviate from the summary of this invention. For example, in the above embodiment, a crystal oscillator using a crystal as a piezoelectric material of a piezoelectric vibration element mounted in the oscillator is illustrated, but in addition to the crystal, lithium tantalate, Other piezoelectric materials such as lithium niobate and piezoelectric ceramic may be used as the main material of the piezoelectric vibration element.

又、上述した実施形態においては、圧電振動素子3として水晶振動素子を用いた表面実装型の水晶発振器を例にとって説明したが、これに代えて、振動素子として弾性表面波振動素子等の他の振動素子を用いた場合にも本発明は適用可能である。   In the above-described embodiment, a surface-mount type crystal oscillator using a crystal resonator element as the piezoelectric resonator element 3 has been described as an example, but instead of this, as the resonator element, other surface acoustic wave resonator elements or the like are used. The present invention can also be applied when a vibration element is used.

図1は、本発明の一実施形態に係る圧電発振器を、圧電発振器の一つである水晶発振器に例を示した概略分解斜視図である。FIG. 1 is a schematic exploded perspective view showing an example of a piezoelectric oscillator according to an embodiment of the present invention as a crystal oscillator that is one of the piezoelectric oscillators. 図2は、図1の記載の集積回路素子2を配線基板対向主面側から示した外観斜視図である。FIG. 2 is an external perspective view showing the integrated circuit element 2 shown in FIG. 1 from the main surface facing the wiring board. 図3は、図1記載の水晶発振器を組み立てた場合の概略断面図である。FIG. 3 is a schematic cross-sectional view when the crystal oscillator shown in FIG. 1 is assembled. 図4(a)乃至(e)は、本発明の製造方法における各工程を説明するために、各工程における本発明構造体の概略形態を断面図で示した説明図である。4 (a) to 4 (e) are explanatory views showing a schematic form of the structure of the present invention in each step in a cross-sectional view in order to explain each step in the manufacturing method of the present invention. 図5は、従来の圧電発振器の一形態を示した概略断面図である。FIG. 5 is a schematic sectional view showing an embodiment of a conventional piezoelectric oscillator.

符号の説明Explanation of symbols

1・・・配線基板
2・・・集積回路素子
3・・・圧電振動素子(水晶振動素子)
4・・・蓋体
5・・・導電性接合材
6・・・外部接続用電極端子
7・・・圧電振動素子搭載用電極パッド
9・・・封止用導体パターン
10・・・集積回路素子ウエハ
11・・・基板接続用電極パッド
12・・・集積回路素子接続用電極パッド
13・・・封止部材
14・・・空間部
15・・・マスター基板
DESCRIPTION OF SYMBOLS 1 ... Wiring board 2 ... Integrated circuit element 3 ... Piezoelectric vibration element (crystal vibration element)
DESCRIPTION OF SYMBOLS 4 ... Lid 5 ... Conductive joining material 6 ... Electrode terminal for external connection 7 ... Electrode pad for piezoelectric vibration element mounting 9 ... Conductive pattern for sealing 10 ... Integrated circuit element Wafer 11 ... Electrode pad for substrate connection 12 ... Electrode pad for integrated circuit element connection 13 ... Sealing member 14 ... Space 15 ... Master substrate

Claims (2)

圧電振動素子と、
該圧電振動素子を搭載する為の圧電振動素子搭載用電極パッドを設けてなる少なくとも発振回路を内蔵した集積回路素子と、
該集積回路素子を搭載してなる配線基板と、
該圧電振動素子及び該集積回路素子を気密封止してなる為の概略箱形状の蓋体とで構成される圧電発振器において、
該集積回路素子と該配線基板との間に空間部が形成されており、該空間部に面する該集積回路素子表面に該圧電振動素子搭載用電極パッドが形成されており、該圧電振動素子搭載用電極パッドに該圧電振動素子が搭載されていることを特徴とする圧電発振器。
A piezoelectric vibration element;
An integrated circuit element including at least an oscillation circuit provided with an electrode pad for mounting the piezoelectric vibration element for mounting the piezoelectric vibration element;
A wiring board on which the integrated circuit element is mounted;
In the piezoelectric oscillator composed of the piezoelectric vibration element and the substantially box-shaped lid for hermetically sealing the integrated circuit element,
A space portion is formed between the integrated circuit element and the wiring board, and the electrode pad for mounting the piezoelectric vibration element is formed on the surface of the integrated circuit element facing the space portion, and the piezoelectric vibration element A piezoelectric oscillator characterized in that the piezoelectric vibration element is mounted on a mounting electrode pad.
一方の主面に基板接続用電極パッドと圧電振動素子搭載用電極パッドを形成した複数の集積回路素子形成領域をマトリックス状に連接形成してなる集積回路素子ウエハ上で、各々の該集積回路素子形成領域の該圧電振動素子搭載用電極パッドに圧電振動素子を搭載し、且つ該基板接続用電極パッド上に導電性接合材を形成する工程Aと、
該圧電振動素子が搭載された集積回路素子ウエハを個々の集積回路素子形成領域外周に沿って切断し、圧電振動素子を搭載した個々の集積回路素子を形成する工程Bと、
複数の配線基板領域を有するマスター基板上に、該圧電振動素子が搭載されている該集積回路素子を、該集積回路素子の他方の主面を保持しつつ該圧電振動素子をマスター基板側に向けた形態で各配線基板領域内に個々に配置し、該圧電振動素子表面を該マスター基板表面及び集積回路素子表面に接触させない形態で該導電性接合材により個々の集積回路素子とマスター基板とを固着接続する工程Cと、
概略箱形状の蓋体を、該マスター基板に搭載した該圧電振動素子が搭載されている個々の該集積回路素子を覆う形態で被せ、該集積回路素子が内蔵された蓋体内を気密に封止する工程Dと、
該配線基板領域外周に沿って該マスター基板を切断して、複数個の圧電発振器を個々に得る工程Eと
を具備することを特徴とする圧電発振器の製造方法。
On an integrated circuit element wafer formed by connecting a plurality of integrated circuit element forming regions in which a substrate connection electrode pad and a piezoelectric vibration element mounting electrode pad are formed on one main surface in a matrix, each integrated circuit element A step A of mounting a piezoelectric vibration element on the electrode pad for mounting a piezoelectric vibration element in a formation region and forming a conductive bonding material on the electrode pad for substrate connection;
Cutting the integrated circuit element wafer on which the piezoelectric vibration element is mounted along the outer periphery of each integrated circuit element forming region to form individual integrated circuit elements on which the piezoelectric vibration element is mounted; and
The integrated circuit element on which the piezoelectric vibration element is mounted on a master substrate having a plurality of wiring board regions is directed toward the master substrate while holding the other main surface of the integrated circuit element. The integrated circuit element and the master substrate are individually arranged in each wiring board region in the form of the conductive bonding material so that the surface of the piezoelectric vibration element is not in contact with the surface of the master substrate and the surface of the integrated circuit element. Step C for secure connection;
A substantially box-shaped lid is covered in a form to cover each integrated circuit element on which the piezoelectric vibration element mounted on the master substrate is mounted, and the lid in which the integrated circuit element is built is hermetically sealed. Step D to be performed
A step E for cutting the master substrate along the outer periphery of the wiring board region to individually obtain a plurality of piezoelectric oscillators.
JP2005374495A 2005-12-27 2005-12-27 Piezoelectric oscillator and its manufacturing method Pending JP2007180701A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013138341A (en) * 2011-12-28 2013-07-11 Kyocera Crystal Device Corp Crystal device
US9048808B2 (en) 2013-02-21 2015-06-02 Samsung Electronics Co., Ltd. Sealed crystal oscillator and semiconductor package including the same
US9444466B2 (en) 2014-03-27 2016-09-13 Seiko Epson Corporation Method of adjusting frequency of resonation device and method of manufacturing resonation device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013138341A (en) * 2011-12-28 2013-07-11 Kyocera Crystal Device Corp Crystal device
US9048808B2 (en) 2013-02-21 2015-06-02 Samsung Electronics Co., Ltd. Sealed crystal oscillator and semiconductor package including the same
US9444466B2 (en) 2014-03-27 2016-09-13 Seiko Epson Corporation Method of adjusting frequency of resonation device and method of manufacturing resonation device

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