JP2007042770A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP2007042770A JP2007042770A JP2005223805A JP2005223805A JP2007042770A JP 2007042770 A JP2007042770 A JP 2007042770A JP 2005223805 A JP2005223805 A JP 2005223805A JP 2005223805 A JP2005223805 A JP 2005223805A JP 2007042770 A JP2007042770 A JP 2007042770A
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Abstract
【解決手段】 半導体装置は、電極14を有する半導体基板10と、半導体基板10の電極14が形成された面に形成された、1つの直線21に沿って延びる形状をなす樹脂突起20と、電極14と電気的に接続されてなり、樹脂突起20上に至るように形成された配線30とを含む。樹脂突起20は、直線21に沿って、樹脂突起20の中央から離れるほど高さが低くなる傾斜領域24を有する。配線30は、傾斜領域24上を通るように形成されてなる。
【選択図】 図1
Description
前記半導体基板の前記電極が形成された面に形成された、1つの直線に沿って延びる形状をなす樹脂突起と、
前記電極と電気的に接続されてなり、前記樹脂突起上に形成された配線と、
を含み、
前記樹脂突起は、前記直線に沿って、前記樹脂突起の中央から離れるほど高さが低くなる傾斜領域を有し、
前記配線は、前記傾斜領域上を通るように形成されてなる。本発明によると、実装性の高い半導体装置を提供することができる。
(2)この半導体装置において、
前記傾斜領域は、前記樹脂突起の中央から離れるほど幅が狭くなるように形成されていてもよい。
(3)この半導体装置において、
前記半導体基板は半導体チップであり、
前記樹脂突起は、前記半導体基板の前記電極が形成された面の1つの辺に沿って延びる形状をなしていてもよい。
(4)この半導体装置において、
複数の前記配線が、1つの前記樹脂突起上に形成されていてもよい。
(5)本発明に係る半導体装置の製造方法は、電極を有する半導体基板を用意する工程と、
前記半導体基板の前記電極が形成された面に、1つの直線に沿って延びる形状をなす樹脂突起を形成する工程と、
前記電極と電気的に接続された配線を、前記樹脂突起上に形成する工程と、
を含み、
前記樹脂突起を、前記直線に沿って、前記樹脂突起の中央から離れるほど高さが低くなる傾斜領域を有するように形成し、
前記配線を、前記傾斜領域上を通るように形成する。本発明によると、実装性に優れた半導体装置を製造することができる。
(6)この半導体装置の製造方法において、
前記樹脂突起を、前記傾斜領域が、前記樹脂突起の中央から離れるほど幅が狭くなるように形成してもよい。
(7)この半導体装置の製造方法において、
前記樹脂突起を形成する工程は、
前記半導体基板上に、樹脂材料を、1つの直線に沿って延びるように、かつ、前記直線に沿って、中央から離れるほど幅が狭くなるように設ける工程と、
前記樹脂材料を硬化させる工程と、
を含んでもよい。
(8)この半導体装置の製造方法において、
前記樹脂材料を、一定の厚みをなすように設け、
前記樹脂材料を硬化収縮させて、前記樹脂突起を形成してもよい。
(9)この半導体装置の製造方法において、
複数の前記配線を、1つの前記樹脂突起上に形成してもよい。
Claims (9)
- 電極を有する半導体基板と、
前記半導体基板の前記電極が形成された面に形成された、1つの直線に沿って延びる形状をなす樹脂突起と、
前記電極と電気的に接続されてなり、前記樹脂突起上に形成された配線と、
を含み、
前記樹脂突起は、前記直線に沿って、前記樹脂突起の中央から離れるほど高さが低くなる傾斜領域を有し、
前記配線は、前記傾斜領域上を通るように形成されてなる半導体装置。 - 請求項1記載の半導体装置において、
前記傾斜領域は、前記樹脂突起の中央から離れるほど幅が狭くなるように形成されてなる半導体装置。 - 請求項1又は請求項2記載の半導体装置において、
前記半導体基板は半導体チップであり、
前記樹脂突起は、前記半導体基板の前記電極が形成された面の1つの辺に沿って延びる形状をなす半導体装置。 - 請求項1から請求項3のいずれかに記載の半導体装置において、
複数の前記配線が、1つの前記樹脂突起上に形成されてなる半導体装置。 - 電極を有する半導体基板を用意する工程と、
前記半導体基板の前記電極が形成された面に、1つの直線に沿って延びる形状をなす樹脂突起を形成する工程と、
前記電極と電気的に接続された配線を、前記樹脂突起上に形成する工程と、
を含み、
前記樹脂突起を、前記直線に沿って、前記樹脂突起の中央から離れるほど高さが低くなる傾斜領域を有するように形成し、
前記配線を、前記傾斜領域上を通るように形成する半導体装置の製造方法。 - 請求項5記載の半導体装置の製造方法において、
前記樹脂突起を、前記傾斜領域が、前記樹脂突起の中央から離れるほど幅が狭くなるように形成する半導体装置の製造方法。 - 請求項6記載の半導体装置の製造方法において、
前記樹脂突起を形成する工程は、
前記半導体基板上に、樹脂材料を、1つの直線に沿って延びるように、かつ、前記直線に沿って、中央から離れるほど幅が狭くなるように設ける工程と、
前記樹脂材料を硬化させる工程と、
を含む半導体装置の製造方法。 - 請求項7記載の半導体装置の製造方法において、
前記樹脂材料を、一定の厚みをなすように設け、
前記樹脂材料を硬化収縮させて、前記樹脂突起を形成する半導体装置の製造方法。 - 請求項5から請求項8のいずれかに記載の半導体装置の製造方法において、
複数の前記配線を、1つの前記樹脂突起上に形成する半導体装置の製造方法。
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JP2005223805A JP4645832B2 (ja) | 2005-08-02 | 2005-08-02 | 半導体装置及びその製造方法 |
US11/493,560 US7728424B2 (en) | 2005-08-02 | 2006-07-27 | Semiconductor device and method of manufacturing the same |
CNB2006101009954A CN100454531C (zh) | 2005-08-02 | 2006-08-01 | 半导体装置及其制造方法 |
TW095128295A TWI304616B (en) | 2005-08-02 | 2006-08-02 | Semiconductor device and method of manufacturing the same |
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JP2005223805A JP4645832B2 (ja) | 2005-08-02 | 2005-08-02 | 半導体装置及びその製造方法 |
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US8018057B2 (en) | 2007-02-21 | 2011-09-13 | Seiko Epson Corporation | Semiconductor device with resin layers and wirings and method for manufacturing the same |
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JP4046069B2 (ja) * | 2003-11-17 | 2008-02-13 | ソニー株式会社 | 固体撮像素子及び固体撮像素子の製造方法 |
JP4572376B2 (ja) * | 2007-07-30 | 2010-11-04 | セイコーエプソン株式会社 | 半導体装置の製造方法および電子デバイスの製造方法 |
JP4352279B2 (ja) * | 2007-08-21 | 2009-10-28 | セイコーエプソン株式会社 | 半導体装置及びその製造方法 |
JP4737466B2 (ja) * | 2009-02-09 | 2011-08-03 | セイコーエプソン株式会社 | 半導体装置及びその製造方法 |
JP5652100B2 (ja) * | 2010-10-05 | 2015-01-14 | ソニー株式会社 | 表示パネル、表示装置、照明パネルおよび照明装置、ならびに表示パネルおよび照明パネルの製造方法 |
KR101897653B1 (ko) * | 2017-03-06 | 2018-09-12 | 엘비세미콘 주식회사 | 컴플라이언트 범프의 제조방법 |
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CN100454531C (zh) | 2009-01-21 |
US20070029652A1 (en) | 2007-02-08 |
US7728424B2 (en) | 2010-06-01 |
JP4645832B2 (ja) | 2011-03-09 |
TWI304616B (en) | 2008-12-21 |
CN1909221A (zh) | 2007-02-07 |
TW200721314A (en) | 2007-06-01 |
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