JP2007035904A5 - - Google Patents

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Publication number
JP2007035904A5
JP2007035904A5 JP2005216752A JP2005216752A JP2007035904A5 JP 2007035904 A5 JP2007035904 A5 JP 2007035904A5 JP 2005216752 A JP2005216752 A JP 2005216752A JP 2005216752 A JP2005216752 A JP 2005216752A JP 2007035904 A5 JP2007035904 A5 JP 2007035904A5
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JP
Japan
Prior art keywords
film
contact layer
ohmic contact
semiconductor thin
manufacturing
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Application number
JP2005216752A
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English (en)
Japanese (ja)
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JP5087825B2 (ja
JP2007035904A (ja
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Priority to JP2005216752A priority Critical patent/JP5087825B2/ja
Priority claimed from JP2005216752A external-priority patent/JP5087825B2/ja
Publication of JP2007035904A publication Critical patent/JP2007035904A/ja
Publication of JP2007035904A5 publication Critical patent/JP2007035904A5/ja
Application granted granted Critical
Publication of JP5087825B2 publication Critical patent/JP5087825B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005216752A 2005-07-27 2005-07-27 アクティブ基板の製造方法 Expired - Fee Related JP5087825B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005216752A JP5087825B2 (ja) 2005-07-27 2005-07-27 アクティブ基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005216752A JP5087825B2 (ja) 2005-07-27 2005-07-27 アクティブ基板の製造方法

Publications (3)

Publication Number Publication Date
JP2007035904A JP2007035904A (ja) 2007-02-08
JP2007035904A5 true JP2007035904A5 (enrdf_load_stackoverflow) 2008-08-07
JP5087825B2 JP5087825B2 (ja) 2012-12-05

Family

ID=37794796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005216752A Expired - Fee Related JP5087825B2 (ja) 2005-07-27 2005-07-27 アクティブ基板の製造方法

Country Status (1)

Country Link
JP (1) JP5087825B2 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101308534B1 (ko) * 2007-07-18 2013-09-23 삼성디스플레이 주식회사 표시 기판 및 이의 제조 방법
US9087752B2 (en) * 2010-10-07 2015-07-21 Sharp Kabushiki Kaisha Semiconductor device, display device, and method for manufacturing semiconductor device and display device
KR20120039947A (ko) * 2010-10-18 2012-04-26 삼성모바일디스플레이주식회사 표시 장치 및 그 제조 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1010583A (ja) * 1996-04-22 1998-01-16 Sharp Corp アクティブマトリクス基板の製造方法、およびそのアクティブマトリクス基板
JP3352604B2 (ja) * 1997-03-24 2002-12-03 シャープ株式会社 薄膜素子の製造方法及びドライエッチング装置
JPH11264995A (ja) * 1998-03-17 1999-09-28 Idemitsu Kosan Co Ltd 液晶表示装置の製造方法
JP4796221B2 (ja) * 1998-11-26 2011-10-19 三星電子株式会社 液晶表示装置用薄膜トランジスタ基板及びその製造方法
JP2001264811A (ja) * 2000-03-22 2001-09-26 Fujitsu Ltd 液晶表示装置の製造方法及び露光装置
JP4651929B2 (ja) * 2002-11-15 2011-03-16 Ｎｅｃ液晶テクノロジー株式会社 液晶表示装置の製造方法
JP4380243B2 (ja) * 2003-07-18 2009-12-09 カシオ計算機株式会社 薄膜トランジスタパネルの製造方法

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