JP2007024777A - 圧力センサおよびその製造方法 - Google Patents
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Abstract
【解決手段】 Au膜26とSiNなどで構成される第1保護膜24との間からの腐食媒体の透過をし難くできるスパッタ法や蒸着法によってAu膜26を形成しつつ、ウェハ全面に形成されるAu膜26を第2保護膜25の表面に形成することで、第2保護膜25の一部と共にAu膜26のうちの不要部分を除去する。このため、電極間における絶縁のために、Au膜26を除去したとしても、Au膜26をパターニングするものではないため、Au専用のフォトリソグラフィの工程ラインを追加する必要がない。したがって、製造設備を増加しなくても、ボンディング箇所での電気的な接続構造の耐久性能が劣化することを防止できる。
【選択図】 図2
Description
以下、本発明の一実施形態が適用された圧力センサについて説明する。図1に、本実施形態における圧力センサS1の断面図を示し、この図に基づいて説明する。なお、この圧力センサS1は、例えば、ディーゼル車の排気清浄フィルタであるDPFの差圧計測等に適用される。
上記実施形態では、スパッタ法によってAu膜26を形成する手法について説明したが、蒸着法による場合にも、同様のことが言える。
Claims (8)
- センサ素子(20)が形成された半導体基板(21)と、
前記半導体基板(21)の表面に形成され、前記センサ素子(20)の所望場所に繋がるコンタクトホールが形成されてなる絶縁膜(22)と、
前記絶縁膜(22)の上の所定領域に形成され、前記コンタクトホールを通じて前記センサ素子(20)と電気的に接続される第1金属膜(23)と、
前記第1金属膜(23)におけるパッドとなる領域を露出させるコンタクトホール(24a)が形成され、前記第1金属膜(23)および前記絶縁膜(22)の上に形成された第1保護膜(24)と、
前記第1保護膜(24)の上に形成され、前記第1金属膜(23)におけるパッドとなる領域を露出させる開口部を有した第2保護膜(25)と、
前記第2保護膜(25)における前記開口部の側壁面と前記第1金属膜(23)における前記パッドとなる領域の表面にスパッタ法もしくは蒸着法によって形成された第2金属膜(26)と、
前記第2金属膜(26)と電気的に接続されたボンディングワイヤ(13)とを有し、
前記半導体基板(21)に形成された前記センサ素子(20)により、圧力導入孔(31)から導入された圧力測定対象の圧力に応じた検出信号を発生させるように構成された圧力センサ。 - 前記第2保護膜(26)は、有機樹脂材料で構成されていることを特徴とする請求項1に記載の圧力センサ。
- 前記第1金属膜はAl膜(23)であり、
前記第2金属膜はAu膜(26)を含む膜であることを特徴とする請求項1または2に記載の圧力センサ。 - 前記第2金属膜は最上層がAu膜(26)となっている金属膜の積層膜であることを特徴とする請求項3に記載の圧力センサ。
- 前記第2保護膜(25)における前記開口部において、前記第1保護膜(24)が部分的に露出しており、
前記第2保護膜(25)の上面は、前記第2金属膜(26)のうち前記第1保護膜(24)の上に形成された部分の表面よりも上に位置していることを特徴とする請求項1ないし4のいずれか1つに記載の圧力センサ。 - センサ素子(20)が形成された半導体基板(21)を用意する工程と、
前記半導体基板(21)の表面に、前記センサ素子(20)の所望場所に繋がるコンタクトホールが形成されてなる絶縁膜(22)を形成する工程と、
前記絶縁膜(22)の上の所定領域に、前記コンタクトホールを通じて前記センサ素子(20)と電気的に接続される第1金属膜(23)を形成する工程と、
前記第1金属膜(23)におけるパッドとなる領域が露出するように、前記第1金属膜(23)および前記絶縁膜(22)の上に第1保護膜(24)を形成する工程と、
前記第1保護膜(24)の上に、前記第1金属膜(23)におけるパッドとなる領域を露出させる開口部を有した第2保護膜(25)を形成する工程と、
前記第2保護膜(25)の表面と前記第1金属膜(23)における前記パッドとなる領域の表面とに、スパッタ法または蒸着法にて、第2金属膜(26)を形成する工程と、
機械加工により、前記第2保護膜(25)および前記第2金属膜(26)を前記第2保護膜(25)の厚みの途中まで除去し、前記第2保護膜(25)における前記開口部の側壁面と前記第1金属膜(23)における前記パッドとなる領域の表面に前記第2金属膜(26)を残す工程と、を有していることを特徴とする圧力センサの製造方法。 - 前記第2保護膜(25)を形成する工程では、前記第2保護膜(25)を有機樹脂材料で形成することを特徴とする請求項6に記載の圧力センサの製造方法。
- 前記第2保護膜(25)を形成する工程では、前記第2保護膜(25)を15μm以上の膜厚とすることを特徴とする請求項6または7に記載の圧力センサの製造方法。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014021065A (ja) * | 2012-07-23 | 2014-02-03 | Denso Corp | 物理量センサ |
CN117330234A (zh) * | 2023-11-28 | 2024-01-02 | 微智医疗器械有限公司 | 一种压力传感器组件制作方法及压力传感器组件 |
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Publication number | Priority date | Publication date | Assignee | Title |
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US10879187B2 (en) | 2017-06-14 | 2020-12-29 | Samsung Electronics Co., Ltd. | Semiconductor package and method of fabricating the same |
US11348876B2 (en) | 2017-06-14 | 2022-05-31 | Samsung Electronics Co., Ltd. | Semiconductor package and method of fabricating the same |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01183165A (ja) * | 1988-01-18 | 1989-07-20 | Fuji Electric Co Ltd | 半導体圧力センサ |
JPH01318240A (ja) * | 1988-06-20 | 1989-12-22 | Nec Corp | 半導体装置の製造方法 |
JP2000138219A (ja) * | 1998-10-30 | 2000-05-16 | Nippon Telegr & Teleph Corp <Ntt> | 配線構造の製造方法 |
JP2004128513A (ja) * | 2003-11-26 | 2004-04-22 | Rohm Co Ltd | 半導体装置およびその製造方法 |
JP2005064451A (ja) * | 2003-07-31 | 2005-03-10 | Fujitsu Ltd | 半導体装置の製造方法及び半導体装置 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01183165A (ja) * | 1988-01-18 | 1989-07-20 | Fuji Electric Co Ltd | 半導体圧力センサ |
JPH01318240A (ja) * | 1988-06-20 | 1989-12-22 | Nec Corp | 半導体装置の製造方法 |
JP2000138219A (ja) * | 1998-10-30 | 2000-05-16 | Nippon Telegr & Teleph Corp <Ntt> | 配線構造の製造方法 |
JP2005064451A (ja) * | 2003-07-31 | 2005-03-10 | Fujitsu Ltd | 半導体装置の製造方法及び半導体装置 |
JP2004128513A (ja) * | 2003-11-26 | 2004-04-22 | Rohm Co Ltd | 半導体装置およびその製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014021065A (ja) * | 2012-07-23 | 2014-02-03 | Denso Corp | 物理量センサ |
CN117330234A (zh) * | 2023-11-28 | 2024-01-02 | 微智医疗器械有限公司 | 一种压力传感器组件制作方法及压力传感器组件 |
CN117330234B (zh) * | 2023-11-28 | 2024-03-15 | 微智医疗器械有限公司 | 一种压力传感器组件制作方法及压力传感器组件 |
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