JP2007012954A - 露光装置 - Google Patents

露光装置 Download PDF

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Publication number
JP2007012954A
JP2007012954A JP2005193326A JP2005193326A JP2007012954A JP 2007012954 A JP2007012954 A JP 2007012954A JP 2005193326 A JP2005193326 A JP 2005193326A JP 2005193326 A JP2005193326 A JP 2005193326A JP 2007012954 A JP2007012954 A JP 2007012954A
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JP
Japan
Prior art keywords
liquid
recovery
contact angle
nozzle
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005193326A
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English (en)
Japanese (ja)
Other versions
JP2007012954A5 (enExample
Inventor
Keiko Chiba
啓子 千葉
Sunao Mori
直 森
Keisui Banno
渓帥 坂野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2005193326A priority Critical patent/JP2007012954A/ja
Publication of JP2007012954A publication Critical patent/JP2007012954A/ja
Publication of JP2007012954A5 publication Critical patent/JP2007012954A5/ja
Pending legal-status Critical Current

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2005193326A 2005-07-01 2005-07-01 露光装置 Pending JP2007012954A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005193326A JP2007012954A (ja) 2005-07-01 2005-07-01 露光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005193326A JP2007012954A (ja) 2005-07-01 2005-07-01 露光装置

Publications (2)

Publication Number Publication Date
JP2007012954A true JP2007012954A (ja) 2007-01-18
JP2007012954A5 JP2007012954A5 (enExample) 2008-08-14

Family

ID=37751040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005193326A Pending JP2007012954A (ja) 2005-07-01 2005-07-01 露光装置

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JP (1) JP2007012954A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011081062A1 (ja) * 2009-12-28 2011-07-07 株式会社ニコン 液浸部材、液浸部材の製造方法、露光装置、及びデバイス製造方法
CN103064258A (zh) * 2011-10-24 2013-04-24 Asml荷兰有限公司 流体处理结构、光刻设备和器件制造方法
US9256136B2 (en) 2010-04-22 2016-02-09 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method involving gas supply

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004207711A (ja) * 2002-12-10 2004-07-22 Nikon Corp 露光装置及び露光方法、デバイス製造方法
WO2005006415A1 (ja) * 2003-07-09 2005-01-20 Nikon Corporation 露光装置及びデバイス製造方法
JP2005045232A (ja) * 2003-07-09 2005-02-17 Nikon Corp 露光装置、露光方法、並びにデバイス製造方法
JP2005109426A (ja) * 2003-02-26 2005-04-21 Nikon Corp 露光装置、露光方法及びデバイス製造方法
JP2005150734A (ja) * 2003-11-14 2005-06-09 Asml Netherlands Bv リソグラフィ装置及び装置製造方法
WO2005081290A1 (ja) * 2004-02-19 2005-09-01 Nikon Corporation 露光装置及びデバイス製造方法
WO2005093791A1 (ja) * 2004-03-25 2005-10-06 Nikon Corporation 露光装置及びデバイス製造方法
JP2005286286A (ja) * 2004-03-04 2005-10-13 Nikon Corp 露光方法及び露光装置、デバイス製造方法
JP2005353820A (ja) * 2004-06-10 2005-12-22 Nikon Corp 露光装置及びデバイス製造方法
JP2006310827A (ja) * 2005-03-31 2006-11-09 Nikon Corp 露光装置、露光方法、及びデバイス製造方法
JP2009514183A (ja) * 2003-06-27 2009-04-02 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及びデバイス製造方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004207711A (ja) * 2002-12-10 2004-07-22 Nikon Corp 露光装置及び露光方法、デバイス製造方法
JP2005109426A (ja) * 2003-02-26 2005-04-21 Nikon Corp 露光装置、露光方法及びデバイス製造方法
JP2009514183A (ja) * 2003-06-27 2009-04-02 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及びデバイス製造方法
WO2005006415A1 (ja) * 2003-07-09 2005-01-20 Nikon Corporation 露光装置及びデバイス製造方法
JP2005045232A (ja) * 2003-07-09 2005-02-17 Nikon Corp 露光装置、露光方法、並びにデバイス製造方法
JP2005150734A (ja) * 2003-11-14 2005-06-09 Asml Netherlands Bv リソグラフィ装置及び装置製造方法
WO2005081290A1 (ja) * 2004-02-19 2005-09-01 Nikon Corporation 露光装置及びデバイス製造方法
JP2005286286A (ja) * 2004-03-04 2005-10-13 Nikon Corp 露光方法及び露光装置、デバイス製造方法
WO2005093791A1 (ja) * 2004-03-25 2005-10-06 Nikon Corporation 露光装置及びデバイス製造方法
JP2005353820A (ja) * 2004-06-10 2005-12-22 Nikon Corp 露光装置及びデバイス製造方法
JP2006310827A (ja) * 2005-03-31 2006-11-09 Nikon Corp 露光装置、露光方法、及びデバイス製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011081062A1 (ja) * 2009-12-28 2011-07-07 株式会社ニコン 液浸部材、液浸部材の製造方法、露光装置、及びデバイス製造方法
JPWO2011081062A1 (ja) * 2009-12-28 2013-05-09 株式会社ニコン 液浸部材、液浸部材の製造方法、露光装置、及びデバイス製造方法
CN103135365A (zh) * 2009-12-28 2013-06-05 株式会社尼康 液浸构件、液浸构件的制造方法、曝光装置、及元件制造方法
US9256136B2 (en) 2010-04-22 2016-02-09 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method involving gas supply
US9846372B2 (en) 2010-04-22 2017-12-19 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
US10209624B2 (en) 2010-04-22 2019-02-19 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
US10620544B2 (en) 2010-04-22 2020-04-14 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
CN103064258A (zh) * 2011-10-24 2013-04-24 Asml荷兰有限公司 流体处理结构、光刻设备和器件制造方法

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