JP2006527491A - 非対称的な輸送特性を備えた中間層を含む有機太陽電池 - Google Patents
非対称的な輸送特性を備えた中間層を含む有機太陽電池 Download PDFInfo
- Publication number
- JP2006527491A JP2006527491A JP2006516122A JP2006516122A JP2006527491A JP 2006527491 A JP2006527491 A JP 2006527491A JP 2006516122 A JP2006516122 A JP 2006516122A JP 2006516122 A JP2006516122 A JP 2006516122A JP 2006527491 A JP2006527491 A JP 2006527491A
- Authority
- JP
- Japan
- Prior art keywords
- intermediate layer
- photovoltaic cell
- electron
- layer
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims description 12
- 230000002950 deficient Effects 0.000 claims description 9
- 238000004770 highest occupied molecular orbital Methods 0.000 claims description 4
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 238000013086 organic photovoltaic Methods 0.000 claims description 2
- 210000000746 body region Anatomy 0.000 claims 1
- 239000010410 layer Substances 0.000 description 99
- 239000002800 charge carrier Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 9
- 230000002730 additional effect Effects 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004776 molecular orbital Methods 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
- H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/84—Layers having high charge carrier mobility
- H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/84—Layers having high charge carrier mobility
- H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
- H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/381—Metal complexes comprising a group IIB metal element, e.g. comprising cadmium, mercury or zinc
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Photovoltaic Devices (AREA)
- Laminated Bodies (AREA)
Abstract
Description
しかしながら、これまでのところ、並列抵抗を増大させるのに適した解決法は知られていない。
この種の層を用いることにより、一つのタイプの電荷担体(電子、又は欠陥電子(Defekt−elektronen)[又は空孔若しくは正孔])が一方の電極から他方の電極へ移動することを回避する。(少なくとも1つのタイプの電荷担体に対する)並列抵抗はこの様式においてかなり増大するであろう。
大きなバンドギャップを備えた層は、実質的には透明又は少なくとも半透明である。「非対称的な導電性」なる用語は、種々の電荷担体に対する非対称的な移動を意味する。そのような二つの層が使用される場合、一方の層は電子を導電し、他方の層は電子を失う。二つの層を直列に接続すると、いずれの電荷担体に対しても並列抵抗が大きく増大する。これは、電荷担体の二つのタイプの一方が一つの電極から他方の電極へ移動することを回避する。これはまた、太陽電池の電極における少数の電荷担体の再結合による損失を低減する。
本発明の好ましい実施形態において、光起電力電池は、欠陥電子伝導性中間層がPEDOTを含むことにより特徴付けられる。PEDOT(ポリ−3,4−エチレンジオキシチオフェン)は、ジエーテル架橋により重合化した複素環式チオフェンに基づく導電性ポリマーである。
図1は、本発明に従う太陽電池の断面図を示す。該太陽電池は、保持材料、即ち基質4に適用される。基質4は、ガラス、プラスチック、結晶又は同様の材料から形成され得る。基質4の厚みが本発明には無関係であり、かつ変更可能であることを示すために、該基質4は切断部6を備えた状態にて記載されている。該基質は、適切な機械的強度、そして選択的に表面保護を備えた太陽電池を提供するための機能を備えるのみである。該基質は入射光に対面する側に設けられているが、反射による損失を低減又は回避するために反射防止コーティング2(又は処理)が施されている。
非限定的ではあるが、光は下方から基質4を介して図示された太陽電池に進入するものと仮定する。従って、第一の電極8は、例えば、Al、Cu、…ITO(インジウム/すず酸化物)等から形成されるべきである。入射光に対面する電極(この場合は電極8)は透明若しくは半透明である、及び/又は格子構造を有すると好ましいことを明記したい。
入射光、即ち好ましくは電極8に対面する中間層10は格子構造を有することを明記したい。
電子供与体16側の活性層12上には、大きなバンドギャップと非対称導電性を備えた第二の中間層18が配置されている。第二の中間層18の導電性は、欠陥電子の移動度に基づく。その大きなバンドギャップにより、該材料はまた、ほぼ透明か、又は少なくとも半透明である。欠陥電子のみがこの中間層を通過することが可能である。この第二の中間層18の材料及び寸法は、活性層即ち電子供与体の特性に適するように選択される。有機太陽電池の場合、これは、中間層のバンドギャップを電子供与体の最低非占有分子軌道に一致させることにより達成され得る。
言うまでもないことであるが、太陽電池はまた逆に、例えば非透明性の基質4から構成することも可能であり、その場合、光は上方から入射する。しかしながら、この種の「逆の」構造は、入射光に面した構造及び層が大気中の酸素、塵等のような環境の影響にさらされて該太陽電池を迅速に損傷させ、又は使用不能にする可能性があるという欠点を伴う。
本発明は、従来の単結晶又は多結晶太陽電池と共に使用され得る。再び述べるが、中間層10,18は電極と活性層との間に配置される。
大きなバンドギャップ及び電極と光活性半導体層との間の鋭い非対称導電性を備えた(半)透明層の使用に関連して、活性層と負の電極との間に高い電子移動度を備えた層を適用すべきであり、活性層と正の電極との間に高い正孔(欠陥電子)移動度を備えた層を適用すべきであることを明記したい。また、高い電子移動度を備えた層の伝導バンドは電子受容体の最高占有分子軌道に一致されるべきであり、かつ高い正孔移動度を備えた層の価電子帯は電子供与体の最低非占有分子軌道に一致させるべきであることも明記したい。
更に、少なくとも二つの中間層のバンドギャップが異なることは明白である。加えて、複数の中間層を含むデザインは、この種の複数層の中間層がまた単一の「複合中間層」とみなされることから本発明の保護範囲であることが意図されていることも理解されよう。更に、本発明は当然のことながらタンデム型太陽電池又はマルチ太陽電池とともに使用されることも明白である。太陽電池の個々の層及びタンデム型太陽電池全体としてのいずれを考慮するうえにおいても、光活性層と電極との間にある少なくとも一つの中間層、並びに各光活性層と電極との間に中間層が存在するという構成を含む全ての可能な組み合わせもまた本発明の保護範囲内にある。
Claims (11)
- 光活性層と二つの電極を含む光起電力電池において、
前記電極の少なくとも一つと前記光活性層との間に非対称的な導電性を備えた中間層が配置されることを特徴とする光起電力電池。 - 前記二つの電極の各々と前記光活性層との間に非対称的な導電性を備えた中間層が配置されることを特徴とする請求項1に記載の光起電力電池。
- 前記中間層は前記光活性層のバンドギャップより大きいか、又は等しいバンドギャップを有することを特徴とする請求項1又は2に記載の光起電力電池。
- 前記中間層は半透明であることを特徴とする請求項1乃至3のいずれか一項に記載の光起電力電池。
- 前記光活性層は、電子供与体を備えた一つの領域と、電子受容体を備えた一つの領域とを含み、カソードが前記電子受容体領域に付与されており、前記中間層は前記電子受容体領域と前記カソードとの間に配置されるとともに電子を介して主として電流が流れる材料を含むことを特徴とする請求項1乃至4のいずれか一項に記載の光起電力電池。
- 前記電子伝導中間層は、TiO2又はC60からなることを特徴とする請求項5に記載の光起電力電池。
- 前記電子伝導中間層の伝導バンドは前記電子受容体の最高占有分子軌道に一致されることを特徴とする請求項5又は6に記載の光起電力電池。
- 前記光活性層は電子供与体を備えた一つの領域と、電子受容体を備えた一つの領域とを含み、アノードが前記電子供与体領域に付与されており、前記中間層は前記電子供与体領域と前記アノードとの間に配置されるとともに欠陥電子を介して主として電流が流れる材料を含むことを特徴とする請求項1乃至7のいずれか一項に記載の光起電力電池。
- 前記欠陥電子伝導中間層はPDOTを含むことを特徴とする請求項1乃至8のいずれか一項に記載の光起電力電池。
- 前記欠陥電子伝導中間層の価電子帯は前記電子供与体の最低非占有分子軌道に一致されることを特徴とする請求項8又は9に記載の光起電力電池。
- 前記光起電力電池は有機光起電力電池であることを特徴とする請求項1乃至10のいずれか一項に記載の光起電力電池。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10326546A DE10326546A1 (de) | 2003-06-12 | 2003-06-12 | Organische Solarzelle mit einer Zwischenschicht mit asymmetrischen Transporteigenschaften |
PCT/EP2004/050915 WO2004112162A1 (de) | 2003-06-12 | 2004-05-26 | Organische solarzelle mit einer zwischenschicht mit asymmetrischen transporteigenschaften |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006527491A true JP2006527491A (ja) | 2006-11-30 |
JP2006527491A5 JP2006527491A5 (ja) | 2010-09-09 |
Family
ID=33494993
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006516122A Pending JP2006527491A (ja) | 2003-06-12 | 2004-05-26 | 非対称的な輸送特性を備えた中間層を含む有機太陽電池 |
Country Status (9)
Country | Link |
---|---|
US (2) | US20060278890A1 (ja) |
EP (2) | EP1631996B2 (ja) |
JP (1) | JP2006527491A (ja) |
KR (2) | KR20060018884A (ja) |
CN (1) | CN1806349B (ja) |
AT (1) | ATE425559T1 (ja) |
DE (2) | DE10326546A1 (ja) |
ES (1) | ES2323372T3 (ja) |
WO (1) | WO2004112162A1 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8294025B2 (en) * | 2002-06-08 | 2012-10-23 | Solarity, Llc | Lateral collection photovoltaics |
CN100508238C (zh) | 2004-05-11 | 2009-07-01 | Lg化学株式会社 | 有机电子器件 |
WO2007040601A1 (en) * | 2005-03-17 | 2007-04-12 | The Regents Of The University Of California | Architecture for high efficiency polymer photovoltaic cells using an optical spacer |
US20060211272A1 (en) * | 2005-03-17 | 2006-09-21 | The Regents Of The University Of California | Architecture for high efficiency polymer photovoltaic cells using an optical spacer |
US20070169816A1 (en) * | 2005-03-17 | 2007-07-26 | The Regents Of The University Of California | Passivating layer for photovoltaic cells |
US20060292736A1 (en) * | 2005-03-17 | 2006-12-28 | The Regents Of The University Of California | Architecture for high efficiency polymer photovoltaic cells using an optical spacer |
JP5335414B2 (ja) | 2005-03-21 | 2013-11-06 | メルク パテント ゲーエムベーハー | 光電池およびそれを備えるモジュール |
JP4982959B2 (ja) * | 2005-03-28 | 2012-07-25 | 大日本印刷株式会社 | 有機薄膜太陽電池素子 |
WO2007011741A2 (en) * | 2005-07-14 | 2007-01-25 | Konarka Technologies, Inc. | Stable organic devices |
JP2007035893A (ja) * | 2005-07-26 | 2007-02-08 | Matsushita Electric Works Ltd | 有機発電素子 |
WO2008060716A2 (en) * | 2006-09-14 | 2008-05-22 | The Regents Of The University Of California | Photovoltaic devices in tandem architecture |
US8319092B1 (en) | 2006-11-03 | 2012-11-27 | Solera Laboratories, Inc. | Nano power cell and method of use |
US9112447B2 (en) * | 2006-11-03 | 2015-08-18 | Solera Laboratories, Inc. | Nano power cell and method of use |
DE102007009995A1 (de) | 2007-03-01 | 2008-09-04 | Hahn-Meitner-Institut Berlin Gmbh | Organische Solarzelle |
KR20100051055A (ko) * | 2007-06-26 | 2010-05-14 | 솔라리티, 아이엔씨. | 측방향 수집 광기전력 변환소자 |
US7906724B2 (en) * | 2007-07-31 | 2011-03-15 | Agency For Science, Technology And Research | N-type conjugated materials based on 2-vinyl-4,5-dicyanoimidazoles and their use in organic photovoltaics |
TW201017898A (en) * | 2008-10-29 | 2010-05-01 | Ind Tech Res Inst | Polymer solar cells |
DE102009019937A1 (de) | 2009-05-05 | 2010-11-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Stapelsolarzelle mit reflektierender Zwischenschicht, sowie Anordnung dieser Solarzellen |
DE102009024953A1 (de) | 2009-06-11 | 2011-02-10 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Mehrschichtelektrode für photovoltaische Bauelemente, Verfahren zu ihrer Herstellung und photovoltaisches Bauelement mit einer solchen Mehrschichtelektrode |
WO2011073219A1 (de) * | 2009-12-16 | 2011-06-23 | Heliatek Gmbh | Photoaktives bauelement mit organischen schichten |
JP5225305B2 (ja) * | 2010-03-11 | 2013-07-03 | 株式会社東芝 | 有機薄膜太陽電池およびその製造方法 |
WO2014144028A1 (en) * | 2013-03-15 | 2014-09-18 | The Regents Of The University Of California | Organic tandem photovoltaic devices and methods |
US10910439B1 (en) | 2016-12-21 | 2021-02-02 | Government Of The United States As Represented By The Secretary Of The Air Force | Efficient interconnecting layer for tandem solar cells |
DE102018214496A1 (de) | 2018-08-28 | 2020-03-05 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Kurzschlussfestes Elektrodensystem für elektronische Bauelemente |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6120372A (ja) * | 1984-07-06 | 1986-01-29 | Mitsubishi Electric Corp | 光電変換素子 |
JPH0693258A (ja) * | 1992-09-14 | 1994-04-05 | Toshiba Corp | 有機薄膜素子 |
WO2001084644A1 (de) * | 2000-04-27 | 2001-11-08 | Qsel-Quantum Solar Energy Linz Forschungs- Und Entwicklungs-Gesellschaft M.B.H. | Photovoltaische zelle |
JP2002076391A (ja) * | 2000-09-01 | 2002-03-15 | Japan Science & Technology Corp | 有機半導体薄膜太陽電池 |
JP2002508599A (ja) * | 1998-03-20 | 2002-03-19 | ケンブリッジ ディスプレイ テクノロジー リミテッド | 多層光起電力素子または光導電素子とその製造方法 |
JP2002100793A (ja) * | 2000-09-25 | 2002-04-05 | Japan Science & Technology Corp | 有機・無機複合薄膜太陽電池とその製造方法 |
JP2002523904A (ja) * | 1998-08-19 | 2002-07-30 | ザ、トラスティーズ オブ プリンストン ユニバーシティ | 有機感光性光電子装置 |
JP2002531958A (ja) * | 1998-11-27 | 2002-09-24 | マイスナ−、ディ−タ− | 有機太陽電池あるいは発光ダイオード |
JP2002335004A (ja) * | 2001-02-08 | 2002-11-22 | Osaka Gas Co Ltd | 光電変換材料および光電池 |
JP2003515933A (ja) * | 1999-11-26 | 2003-05-07 | ザ、トラスティーズ オブ プリンストン ユニバーシティ | 励起子阻止層をもつ有機感光性オプトエレクトロニクス素子 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4558413A (en) * | 1983-11-21 | 1985-12-10 | Xerox Corporation | Software version management system |
US4631352A (en) * | 1985-12-17 | 1986-12-23 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | High band gap II-VI and III-V tunneling junctions for silicon multijunction solar cells |
US5006915A (en) * | 1989-02-14 | 1991-04-09 | Ricoh Company, Ltd. | Electric device and photoelectric conversion device comprising the same |
EP0440869A1 (de) * | 1990-02-09 | 1991-08-14 | Bio-Photonics, Inc. | Photovoltaisches Bauelement zur Umwandlung des Sonnenlichts in elektrischen Strom und photoelektrische Batterie |
US5331183A (en) * | 1992-08-17 | 1994-07-19 | The Regents Of The University Of California | Conjugated polymer - acceptor heterojunctions; diodes, photodiodes, and photovoltaic cells |
JP3792281B2 (ja) * | 1995-01-09 | 2006-07-05 | 株式会社半導体エネルギー研究所 | 太陽電池 |
US5753393A (en) * | 1995-05-25 | 1998-05-19 | Mitsubishi Chemical Corporation | Electrophotographic photoreceptor |
US6352777B1 (en) * | 1998-08-19 | 2002-03-05 | The Trustees Of Princeton University | Organic photosensitive optoelectronic devices with transparent electrodes |
US6198092B1 (en) * | 1998-08-19 | 2001-03-06 | The Trustees Of Princeton University | Stacked organic photosensitive optoelectronic devices with an electrically parallel configuration |
CA2346294C (en) * | 1998-10-09 | 2011-06-28 | The Trustees Of Columbia University In The City Of New York | Solid-state photoelectric device |
US6291763B1 (en) * | 1999-04-06 | 2001-09-18 | Fuji Photo Film Co., Ltd. | Photoelectric conversion device and photo cell |
CA2312140A1 (en) * | 1999-06-25 | 2000-12-25 | Matthias Ramm | Charge separation type heterojunction structure and manufacturing method therefor |
JP2003530476A (ja) * | 2000-04-11 | 2003-10-14 | デュポン ディスプレイズ インコーポレイテッド | 可溶性ポリ(フルオレン−オキサジアゾール)共役ポリマー |
AT411306B (de) * | 2000-04-27 | 2003-11-25 | Qsel Quantum Solar Energy Linz | Photovoltaische zelle mit einer photoaktiven schicht aus zwei molekularen organischen komponenten |
EP1209708B1 (en) * | 2000-11-24 | 2007-01-17 | Sony Deutschland GmbH | Hybrid solar cells with thermal deposited semiconductive oxide layer |
US6580027B2 (en) * | 2001-06-11 | 2003-06-17 | Trustees Of Princeton University | Solar cells using fullerenes |
EP1837930A1 (en) * | 2001-09-04 | 2007-09-26 | Sony Deutschland GmbH | Photovoltaic device and method for preparing the same |
WO2004023527A2 (en) * | 2002-09-05 | 2004-03-18 | Nanosys, Inc. | Nanostructure and nanocomposite based compositions and photovoltaic devices |
WO2004083958A2 (de) * | 2003-03-19 | 2004-09-30 | Technische Universität Dresden | Photoaktives bauelement mit organischen schichten |
-
2003
- 2003-06-12 DE DE10326546A patent/DE10326546A1/de not_active Withdrawn
-
2004
- 2004-05-26 KR KR1020057023549A patent/KR20060018884A/ko active Search and Examination
- 2004-05-26 WO PCT/EP2004/050915 patent/WO2004112162A1/de active Application Filing
- 2004-05-26 EP EP04734848.7A patent/EP1631996B2/de not_active Expired - Lifetime
- 2004-05-26 CN CN2004800164010A patent/CN1806349B/zh not_active Expired - Fee Related
- 2004-05-26 JP JP2006516122A patent/JP2006527491A/ja active Pending
- 2004-05-26 AT AT04734848T patent/ATE425559T1/de not_active IP Right Cessation
- 2004-05-26 ES ES04734848T patent/ES2323372T3/es not_active Expired - Lifetime
- 2004-05-26 DE DE502004009141T patent/DE502004009141D1/de not_active Expired - Lifetime
- 2004-05-26 KR KR1020117004235A patent/KR20110028664A/ko not_active Application Discontinuation
- 2004-05-26 US US10/559,009 patent/US20060278890A1/en not_active Abandoned
- 2004-05-26 EP EP09153801.7A patent/EP2063472B1/de not_active Expired - Lifetime
-
2014
- 2014-04-28 US US14/262,869 patent/US20140230901A1/en not_active Abandoned
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6120372A (ja) * | 1984-07-06 | 1986-01-29 | Mitsubishi Electric Corp | 光電変換素子 |
JPH0693258A (ja) * | 1992-09-14 | 1994-04-05 | Toshiba Corp | 有機薄膜素子 |
JP2002508599A (ja) * | 1998-03-20 | 2002-03-19 | ケンブリッジ ディスプレイ テクノロジー リミテッド | 多層光起電力素子または光導電素子とその製造方法 |
JP2002523904A (ja) * | 1998-08-19 | 2002-07-30 | ザ、トラスティーズ オブ プリンストン ユニバーシティ | 有機感光性光電子装置 |
JP2002531958A (ja) * | 1998-11-27 | 2002-09-24 | マイスナ−、ディ−タ− | 有機太陽電池あるいは発光ダイオード |
JP2003515933A (ja) * | 1999-11-26 | 2003-05-07 | ザ、トラスティーズ オブ プリンストン ユニバーシティ | 励起子阻止層をもつ有機感光性オプトエレクトロニクス素子 |
WO2001084644A1 (de) * | 2000-04-27 | 2001-11-08 | Qsel-Quantum Solar Energy Linz Forschungs- Und Entwicklungs-Gesellschaft M.B.H. | Photovoltaische zelle |
JP2002076391A (ja) * | 2000-09-01 | 2002-03-15 | Japan Science & Technology Corp | 有機半導体薄膜太陽電池 |
JP2002100793A (ja) * | 2000-09-25 | 2002-04-05 | Japan Science & Technology Corp | 有機・無機複合薄膜太陽電池とその製造方法 |
JP2002335004A (ja) * | 2001-02-08 | 2002-11-22 | Osaka Gas Co Ltd | 光電変換材料および光電池 |
Also Published As
Publication number | Publication date |
---|---|
ATE425559T1 (de) | 2009-03-15 |
EP2063472A3 (de) | 2010-02-17 |
EP1631996A1 (de) | 2006-03-08 |
US20140230901A1 (en) | 2014-08-21 |
CN1806349A (zh) | 2006-07-19 |
DE10326546A1 (de) | 2005-01-05 |
EP1631996B1 (de) | 2009-03-11 |
EP2063472A2 (de) | 2009-05-27 |
WO2004112162A1 (de) | 2004-12-23 |
ES2323372T3 (es) | 2009-07-14 |
US20060278890A1 (en) | 2006-12-14 |
DE502004009141D1 (de) | 2009-04-23 |
CN1806349B (zh) | 2012-01-04 |
KR20110028664A (ko) | 2011-03-21 |
KR20060018884A (ko) | 2006-03-02 |
EP2063472B1 (de) | 2015-07-01 |
EP1631996B2 (de) | 2013-08-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20140230901A1 (en) | Organic Solar Cell Comprising an Intermediate Layer with Asymmetrical Transport Properties | |
JP4966653B2 (ja) | 共有する有機電極を備えたタンデム型光起電力電池及びその製造方法 | |
US11158828B2 (en) | Solar cell comprising an oxide-nanoparticle buffer layer and method of fabrication | |
US8592804B2 (en) | Method for fabricating organic optoelectronic devices | |
WO2014007867A1 (en) | Semi-transparent, transparent, stacked and top-illuminated organic photovoltaic devices | |
KR20110133717A (ko) | 유기 태양 전지 및 그 제조 방법 | |
KR102170089B1 (ko) | 반사기를 지닌 유기 감광성 디바이스 | |
CN110140219A (zh) | 在部分遮阴下具有改进的效率和使用寿命的用于将光转换成电能的有机构造元件 | |
US20240349522A1 (en) | Compound charge transport layer for organic photovoltaic devices | |
TWI660532B (zh) | 具有激子障蔽性電荷載體濾波器之有機光敏性裝置 | |
JP5888691B2 (ja) | 有機薄膜太陽電池 | |
KR102382249B1 (ko) | 페로브스카이트 텐덤 태양전지 모듈 및 그 제조 방법 | |
US9748423B2 (en) | Photovoltaic device with fiber array for sun tracking | |
JP2006066707A (ja) | 光電変換装置 | |
WO2022129758A1 (fr) | Structure simplifiee de cellules solaires tandem a deux terminaux | |
Travkin et al. | Tandem photovoltaic cells with a composite intermediate layer | |
JP2013183065A (ja) | 有機薄膜太陽電池 | |
KR102700496B1 (ko) | 하이브리드 태양전지 및 그 제작방법 | |
US20210020697A1 (en) | Organic optoelectronic device | |
US20240107785A1 (en) | Simplified structure of two-terminal tandem solar cells with transparent conducting oxide junction material | |
CN115777150A (zh) | 具有金属氮氧化物层的多结光伏设备 | |
Lee et al. | Transparent and tandem solar cells using solution-processed metal nanowire transparent electrodes | |
WO2021037773A1 (en) | A translucent photovoltaic device and a method for manufacturing thereof | |
KR20180017401A (ko) | 양면 구조의 반투명 태양전지 및 이의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070404 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100416 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100420 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100720 |
|
A524 | Written submission of copy of amendment under article 19 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A524 Effective date: 20100720 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101207 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110228 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20110524 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110922 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110927 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20111020 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20120126 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20120309 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120724 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120727 |