JP2006512782A5 - - Google Patents

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Publication number
JP2006512782A5
JP2006512782A5 JP2005508519A JP2005508519A JP2006512782A5 JP 2006512782 A5 JP2006512782 A5 JP 2006512782A5 JP 2005508519 A JP2005508519 A JP 2005508519A JP 2005508519 A JP2005508519 A JP 2005508519A JP 2006512782 A5 JP2006512782 A5 JP 2006512782A5
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JP
Japan
Prior art keywords
nanoscale
wiring
region
control
controllable
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Pending
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JP2005508519A
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English (en)
Japanese (ja)
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JP2006512782A (ja
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Priority claimed from PCT/US2003/023198 external-priority patent/WO2004061859A2/en
Publication of JP2006512782A publication Critical patent/JP2006512782A/ja
Publication of JP2006512782A5 publication Critical patent/JP2006512782A5/ja
Pending legal-status Critical Current

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JP2005508519A 2002-07-25 2003-07-24 サブパターン転写ナノスケールインターフェースの確率的組立体 Pending JP2006512782A (ja)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US39894302P 2002-07-25 2002-07-25
US40039402P 2002-08-01 2002-08-01
US41517602P 2002-09-30 2002-09-30
US42901002P 2002-11-25 2002-11-25
US44199503P 2003-01-23 2003-01-23
US46535703P 2003-04-25 2003-04-25
US46738803P 2003-05-02 2003-05-02
PCT/US2003/023198 WO2004061859A2 (en) 2002-07-25 2003-07-24 Stochastic assembly of sublithographic nanoscale interfaces

Publications (2)

Publication Number Publication Date
JP2006512782A JP2006512782A (ja) 2006-04-13
JP2006512782A5 true JP2006512782A5 (https=) 2006-09-07

Family

ID=32097212

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2005508519A Pending JP2006512782A (ja) 2002-07-25 2003-07-24 サブパターン転写ナノスケールインターフェースの確率的組立体
JP2005501049A Pending JP2005539404A (ja) 2002-07-25 2003-07-24 サブパターン転写ナノスケールメモリ構造

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2005501049A Pending JP2005539404A (ja) 2002-07-25 2003-07-24 サブパターン転写ナノスケールメモリ構造

Country Status (7)

Country Link
US (2) US6900479B2 (https=)
EP (3) EP1758126A3 (https=)
JP (2) JP2006512782A (https=)
AT (2) ATE360873T1 (https=)
AU (2) AU2003298529A1 (https=)
DE (2) DE60325903D1 (https=)
WO (2) WO2004034467A2 (https=)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
CN101887935B (zh) * 2000-08-22 2013-09-11 哈佛学院董事会 掺杂的拉长半导体,其生长,包含这类半导体的器件及其制造
US20060175601A1 (en) * 2000-08-22 2006-08-10 President And Fellows Of Harvard College Nanoscale wires and related devices
KR20030055346A (ko) * 2000-12-11 2003-07-02 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 나노센서
EP1468423A2 (en) * 2002-01-18 2004-10-20 California Institute Of Technology Array-based architecture for molecular electronics
AU2003261205A1 (en) 2002-07-19 2004-02-09 President And Fellows Of Harvard College Nanoscale coherent optical components
JP2006512782A (ja) * 2002-07-25 2006-04-13 カリフォルニア インスティテュート オヴ テクノロジー サブパターン転写ナノスケールインターフェースの確率的組立体
DE60212118T2 (de) * 2002-08-08 2007-01-04 Sony Deutschland Gmbh Verfahren zur Herstellung einer Kreuzschienenstruktur von Nanodrähten
CA2499965C (en) * 2002-09-30 2013-03-19 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
US7135728B2 (en) * 2002-09-30 2006-11-14 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
WO2004109706A2 (en) 2003-06-02 2004-12-16 California Institute Of Technology Nanoscale wire-based sublithographic programmable logic arrays
US7242601B2 (en) 2003-06-02 2007-07-10 California Institute Of Technology Deterministic addressing of nanoscale devices assembled at sublithographic pitches
WO2005029498A2 (en) 2003-07-24 2005-03-31 California Institute Of Technology Nanoscale wire coding for stochastic assembly
WO2005084164A2 (en) * 2003-08-13 2005-09-15 Nantero, Inc. Nanotube-based switching elements and logic circuits
US7018549B2 (en) * 2003-12-29 2006-03-28 Intel Corporation Method of fabricating multiple nanowires of uniform length from a single catalytic nanoparticle
US20090227107A9 (en) * 2004-02-13 2009-09-10 President And Fellows Of Havard College Nanostructures Containing Metal Semiconductor Compounds
US7049626B1 (en) * 2004-04-02 2006-05-23 Hewlett-Packard Development Company, L.P. Misalignment-tolerant electronic interfaces and methods for producing misalignment-tolerant electronic interfaces
US7310004B2 (en) * 2004-05-28 2007-12-18 California Institute Of Technology Apparatus and method of interconnecting nanoscale programmable logic array clusters
WO2006107312A1 (en) * 2004-06-15 2006-10-12 President And Fellows Of Harvard College Nanosensors
CN101010793B (zh) * 2004-06-30 2011-09-28 Nxp股份有限公司 制造具有通过纳米线接触的导电材料层的电子器件的方法
US7495942B2 (en) 2004-08-13 2009-02-24 University Of Florida Research Foundation, Inc. Nanoscale content-addressable memory
TWI348169B (en) * 2004-09-21 2011-09-01 Nantero Inc Resistive elements using carbon nanotubes
US7544977B2 (en) * 2006-01-27 2009-06-09 Hewlett-Packard Development Company, L.P. Mixed-scale electronic interface
CN101124638A (zh) * 2004-12-06 2008-02-13 哈佛大学 基于纳米尺度线的数据存储
US8883568B2 (en) 2008-06-10 2014-11-11 Brown University Research Foundation Method providing radial addressing of nanowires
WO2006084128A2 (en) * 2005-02-04 2006-08-10 Brown University Apparatus, method and computer program product providing radial addressing of nanowires
US7211503B2 (en) * 2005-02-24 2007-05-01 Hewlett-Packard Development Company, L.P. Electronic devices fabricated by use of random connections
DE102005016244A1 (de) * 2005-04-08 2006-10-19 Infineon Technologies Ag Speicherzelle, Speichereinrichtung und Verfahren zu deren Herstellung
US7786467B2 (en) * 2005-04-25 2010-08-31 Hewlett-Packard Development Company, L.P. Three-dimensional nanoscale crossbars
US20100227382A1 (en) * 2005-05-25 2010-09-09 President And Fellows Of Harvard College Nanoscale sensors
WO2006132659A2 (en) 2005-06-06 2006-12-14 President And Fellows Of Harvard College Nanowire heterostructures
WO2007002297A2 (en) * 2005-06-24 2007-01-04 Crafts Douglas E Temporary planar electrical contact device and method using vertically-compressible nanotube contact structures
US9159417B2 (en) * 2005-12-20 2015-10-13 The Invention Science Fund I, Llc Deletable nanotube circuit
US7989797B2 (en) * 2005-12-20 2011-08-02 The Invention Science Fund I, Llc Connectible nanotube circuit
US7696505B2 (en) * 2005-12-20 2010-04-13 Searete Llc Connectible nanotube circuit
US7786465B2 (en) * 2005-12-20 2010-08-31 Invention Science Fund 1, Llc Deletable nanotube circuit
US7302513B2 (en) * 2006-04-03 2007-11-27 Blaise Laurent Mouttet Programmable crossbar signal processor
US9965251B2 (en) * 2006-04-03 2018-05-08 Blaise Laurent Mouttet Crossbar arithmetic and summation processor
US7576565B2 (en) * 2006-04-03 2009-08-18 Blaise Laurent Mouttet Crossbar waveform driver circuit
US8183554B2 (en) * 2006-04-03 2012-05-22 Blaise Laurent Mouttet Symmetrical programmable memresistor crossbar structure
US20070233761A1 (en) * 2006-04-03 2007-10-04 Mouttet Blaise L Crossbar arithmetic processor
US9102521B2 (en) 2006-06-12 2015-08-11 President And Fellows Of Harvard College Nanosensors and related technologies
US7763932B2 (en) * 2006-06-29 2010-07-27 International Business Machines Corporation Multi-bit high-density memory device and architecture and method of fabricating multi-bit high-density memory devices
TWI307677B (en) * 2006-07-18 2009-03-21 Applied Res Lab Method and device for fabricating nano-structure with patterned particle beam
US7393739B2 (en) * 2006-08-30 2008-07-01 International Business Machines Corporation Demultiplexers using transistors for accessing memory cell arrays
US8058640B2 (en) 2006-09-11 2011-11-15 President And Fellows Of Harvard College Branched nanoscale wires
KR20090075819A (ko) 2006-09-19 2009-07-09 큐나노 에이비 나노스케일 전계 효과 트랜지스터의 조립체
US7778061B2 (en) * 2006-10-16 2010-08-17 Hewlett-Packard Development Company, L.P. Crossbar-memory systems and methods for writing to and reading from crossbar memory junctions of crossbar-memory systems
US8130007B2 (en) * 2006-10-16 2012-03-06 Formfactor, Inc. Probe card assembly with carbon nanotube probes having a spring mechanism therein
US7968474B2 (en) 2006-11-09 2011-06-28 Nanosys, Inc. Methods for nanowire alignment and deposition
WO2008127314A1 (en) 2006-11-22 2008-10-23 President And Fellows Of Harvard College High-sensitivity nanoscale wire sensors
US9806273B2 (en) * 2007-01-03 2017-10-31 The United States Of America As Represented By The Secretary Of The Army Field effect transistor array using single wall carbon nano-tubes
US7608854B2 (en) * 2007-01-29 2009-10-27 Hewlett-Packard Development Company, L.P. Electronic device and method of making the same
US7763978B2 (en) * 2007-03-28 2010-07-27 Hewlett-Packard Development Company, L.P. Three-dimensional crossbar array systems and methods for writing information to and reading information stored in three-dimensional crossbar array junctions
US7872334B2 (en) * 2007-05-04 2011-01-18 International Business Machines Corporation Carbon nanotube diodes and electrostatic discharge circuits and methods
US7492624B2 (en) * 2007-06-29 2009-02-17 Stmicroelectronics S.R.L. Method and device for demultiplexing a crossbar non-volatile memory
JP2011523200A (ja) * 2008-04-15 2011-08-04 クナノ アーベー ナノワイヤラップゲートデバイス
WO2010048127A2 (en) * 2008-10-20 2010-04-29 The Regents Of The University Of Michigan A silicon based nanoscale crossbar memory
US8390323B2 (en) 2009-04-30 2013-03-05 Hewlett-Packard Development Company, L.P. Dense nanoscale logic circuitry
JP2012528020A (ja) 2009-05-26 2012-11-12 ナノシス・インク． ナノワイヤおよび他のデバイスの電場沈着のための方法およびシステム
US9297796B2 (en) 2009-09-24 2016-03-29 President And Fellows Of Harvard College Bent nanowires and related probing of species
KR101161060B1 (ko) * 2009-11-30 2012-06-29 서강대학교산학협력단 나노입자를 기둥형태로 조직화시키기 위한 배열장치 및 그 배열방법
US9181089B2 (en) 2010-01-15 2015-11-10 Board Of Regents Of The University Of Texas System Carbon nanotube crossbar based nano-architecture
US7982504B1 (en) 2010-01-29 2011-07-19 Hewlett Packard Development Company, L.P. Interconnection architecture for multilayer circuits
US9324718B2 (en) 2010-01-29 2016-04-26 Hewlett Packard Enterprise Development Lp Three dimensional multilayer circuit
US9368599B2 (en) 2010-06-22 2016-06-14 International Business Machines Corporation Graphene/nanostructure FET with self-aligned contact and gate
US8872176B2 (en) 2010-10-06 2014-10-28 Formfactor, Inc. Elastic encapsulated carbon nanotube based electrical contacts
US9273004B2 (en) 2011-09-29 2016-03-01 International Business Machines Corporation Selective placement of carbon nanotubes via coulombic attraction of oppositely charged carbon nanotubes and self-assembled monolayers
US9442695B2 (en) 2014-05-02 2016-09-13 International Business Machines Corporation Random bit generator based on nanomaterials
US9720772B2 (en) * 2015-03-04 2017-08-01 Kabushiki Kaisha Toshiba Memory system, method for controlling magnetic memory, and device for controlling magnetic memory
CN107564946A (zh) * 2016-07-01 2018-01-09 清华大学 纳米晶体管
CN107564917B (zh) * 2016-07-01 2020-06-09 清华大学 纳米异质结构
CN107564910B (zh) * 2016-07-01 2020-08-11 清华大学 半导体器件
CN107564947A (zh) * 2016-07-01 2018-01-09 清华大学 纳米异质结构
US11943940B2 (en) 2018-07-11 2024-03-26 The Regents Of The University Of California Nucleic acid-based electrically readable, read-only memory

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4658329B2 (ja) 1999-02-12 2011-03-23 ボード オブ トラスティーズ，オブ ミシガン ステイト ユニバーシティ 帯電粒子を収容するナノカプセル、その用法及び形成法
US6256767B1 (en) * 1999-03-29 2001-07-03 Hewlett-Packard Company Demultiplexer for a molecular wire crossbar network (MWCN DEMUX)
US6314019B1 (en) * 1999-03-29 2001-11-06 Hewlett-Packard Company Molecular-wire crossbar interconnect (MWCI) for signal routing and communications
US6128214A (en) 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6383784B1 (en) 1999-12-03 2002-05-07 City Of Hope Construction of nucleoprotein based assemblies comprising addressable components for nanoscale assembly and nanoprocessors
EP1299914B1 (de) * 2000-07-04 2008-04-02 Qimonda AG Feldeffekttransistor
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
AU2001297881A1 (en) 2000-11-01 2003-01-02 James J. Myrick Nanoelectronic interconnection and addressing
EP1374309A1 (en) * 2001-03-30 2004-01-02 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
AU2002307129A1 (en) * 2001-04-03 2002-10-21 Carnegie Mellon University Electronic circuit device, system and method
US6385075B1 (en) * 2001-06-05 2002-05-07 Hewlett-Packard Company Parallel access of cross-point diode memory arrays
US6706402B2 (en) * 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
EP1468423A2 (en) * 2002-01-18 2004-10-20 California Institute Of Technology Array-based architecture for molecular electronics
US6760245B2 (en) * 2002-05-01 2004-07-06 Hewlett-Packard Development Company, L.P. Molecular wire crossbar flash memory
JP2006512782A (ja) 2002-07-25 2006-04-13 カリフォルニア インスティテュート オヴ テクノロジー サブパターン転写ナノスケールインターフェースの確率的組立体
US6682951B1 (en) * 2002-09-26 2004-01-27 International Business Machines Corporation Arrangements of microscopic particles for performing logic computations, and method of use

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