AU2003298529A1 - Stochastic assembly of sublithographic nanoscale interfaces - Google Patents

Stochastic assembly of sublithographic nanoscale interfaces

Info

Publication number
AU2003298529A1
AU2003298529A1 AU2003298529A AU2003298529A AU2003298529A1 AU 2003298529 A1 AU2003298529 A1 AU 2003298529A1 AU 2003298529 A AU2003298529 A AU 2003298529A AU 2003298529 A AU2003298529 A AU 2003298529A AU 2003298529 A1 AU2003298529 A1 AU 2003298529A1
Authority
AU
Australia
Prior art keywords
nanoscale
wires
selecting
stochastic assembly
nanoscale wires
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003298529A
Other languages
English (en)
Other versions
AU2003298529A8 (en
Inventor
Patrick D Lincoln
John Savage
Andre Dehon
Charles M Lieber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Brown University
Original Assignee
Brown University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brown University filed Critical Brown University
Publication of AU2003298529A8 publication Critical patent/AU2003298529A8/xx
Publication of AU2003298529A1 publication Critical patent/AU2003298529A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Micro-Organisms Or Cultivation Processes Thereof (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Prostheses (AREA)
  • Silicon Compounds (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Read Only Memory (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)
  • Ropes Or Cables (AREA)
  • Semiconductor Integrated Circuits (AREA)
AU2003298529A 2002-07-25 2003-07-24 Stochastic assembly of sublithographic nanoscale interfaces Abandoned AU2003298529A1 (en)

Applications Claiming Priority (15)

Application Number Priority Date Filing Date Title
US39894302P 2002-07-25 2002-07-25
US60/398,943 2002-07-25
US40039402P 2002-08-01 2002-08-01
US60/400,394 2002-08-01
US41517602P 2002-09-30 2002-09-30
US60/415,176 2002-09-30
US42901002P 2002-11-25 2002-11-25
US60/429,010 2002-11-25
US44199503P 2003-01-23 2003-01-23
US60/441,995 2003-01-23
US46535703P 2003-04-25 2003-04-25
US60/465,357 2003-04-25
US46738803P 2003-05-02 2003-05-02
US60/467,388 2003-05-02
PCT/US2003/023198 WO2004061859A2 (en) 2002-07-25 2003-07-24 Stochastic assembly of sublithographic nanoscale interfaces

Publications (2)

Publication Number Publication Date
AU2003298529A8 AU2003298529A8 (en) 2004-07-29
AU2003298529A1 true AU2003298529A1 (en) 2004-07-29

Family

ID=32097212

Family Applications (2)

Application Number Title Priority Date Filing Date
AU2003298529A Abandoned AU2003298529A1 (en) 2002-07-25 2003-07-24 Stochastic assembly of sublithographic nanoscale interfaces
AU2003298530A Abandoned AU2003298530A1 (en) 2002-07-25 2003-07-24 Sublithographic nanoscale memory architecture

Family Applications After (1)

Application Number Title Priority Date Filing Date
AU2003298530A Abandoned AU2003298530A1 (en) 2002-07-25 2003-07-24 Sublithographic nanoscale memory architecture

Country Status (7)

Country Link
US (2) US6900479B2 (https=)
EP (3) EP1525586B1 (https=)
JP (2) JP2005539404A (https=)
AT (2) ATE360873T1 (https=)
AU (2) AU2003298529A1 (https=)
DE (2) DE60313462T2 (https=)
WO (2) WO2004061859A2 (https=)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
AU8664901A (en) * 2000-08-22 2002-03-04 Harvard College Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US20060175601A1 (en) * 2000-08-22 2006-08-10 President And Fellows Of Harvard College Nanoscale wires and related devices
ATE408140T1 (de) * 2000-12-11 2008-09-15 Harvard College Vorrichtung enthaltend nanosensoren zur ekennung eines analyten und verfahren zu ihrer herstellung
US7073157B2 (en) * 2002-01-18 2006-07-04 California Institute Of Technology Array-based architecture for molecular electronics
WO2004010552A1 (en) 2002-07-19 2004-01-29 President And Fellows Of Harvard College Nanoscale coherent optical components
DE60313462T2 (de) 2002-07-25 2008-01-03 California Institute Of Technology, Pasadena Sublithographische nanobereichs-speicherarchitektur
EP1388521B1 (en) * 2002-08-08 2006-06-07 Sony Deutschland GmbH Method for preparing a nanowire crossbar structure
US7135728B2 (en) * 2002-09-30 2006-11-14 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
EP1547139A4 (en) 2002-09-30 2009-08-26 Nanosys Inc LARGE AREA, NANO-READY MACROELECTRONIC SUBSTRATES AND USES THEREOF
US7242601B2 (en) * 2003-06-02 2007-07-10 California Institute Of Technology Deterministic addressing of nanoscale devices assembled at sublithographic pitches
WO2004109706A2 (en) * 2003-06-02 2004-12-16 California Institute Of Technology Nanoscale wire-based sublithographic programmable logic arrays
US7692952B2 (en) * 2003-07-24 2010-04-06 California Institute Of Technology Nanoscale wire coding for stochastic assembly
CN1868002B (zh) * 2003-08-13 2011-12-14 南泰若股份有限公司 具有多个控件的基于纳米管的开关元件及由其制成的电路
US7018549B2 (en) * 2003-12-29 2006-03-28 Intel Corporation Method of fabricating multiple nanowires of uniform length from a single catalytic nanoparticle
US20090227107A9 (en) * 2004-02-13 2009-09-10 President And Fellows Of Havard College Nanostructures Containing Metal Semiconductor Compounds
US7049626B1 (en) * 2004-04-02 2006-05-23 Hewlett-Packard Development Company, L.P. Misalignment-tolerant electronic interfaces and methods for producing misalignment-tolerant electronic interfaces
US7310004B2 (en) 2004-05-28 2007-12-18 California Institute Of Technology Apparatus and method of interconnecting nanoscale programmable logic array clusters
US20070264623A1 (en) * 2004-06-15 2007-11-15 President And Fellows Of Harvard College Nanosensors
WO2006003620A1 (en) * 2004-06-30 2006-01-12 Koninklijke Philips Electronics N.V. Method for manufacturing an electric device with a layer of conductive material contacted by nanowire
WO2006137833A1 (en) * 2004-08-13 2006-12-28 University Of Florida Research Foundation, Inc. Nanoscale content-addressable memory
CA2581058C (en) * 2004-09-21 2012-06-26 Nantero, Inc. Resistive elements using carbon nanotubes
US7544977B2 (en) * 2006-01-27 2009-06-09 Hewlett-Packard Development Company, L.P. Mixed-scale electronic interface
JP2008523590A (ja) * 2004-12-06 2008-07-03 プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ ナノスケールワイヤベースのデータ格納装置
WO2006084128A2 (en) * 2005-02-04 2006-08-10 Brown University Apparatus, method and computer program product providing radial addressing of nanowires
US8883568B2 (en) 2008-06-10 2014-11-11 Brown University Research Foundation Method providing radial addressing of nanowires
US7211503B2 (en) * 2005-02-24 2007-05-01 Hewlett-Packard Development Company, L.P. Electronic devices fabricated by use of random connections
DE102005016244A1 (de) * 2005-04-08 2006-10-19 Infineon Technologies Ag Speicherzelle, Speichereinrichtung und Verfahren zu deren Herstellung
US7786467B2 (en) 2005-04-25 2010-08-31 Hewlett-Packard Development Company, L.P. Three-dimensional nanoscale crossbars
US20100227382A1 (en) 2005-05-25 2010-09-09 President And Fellows Of Harvard College Nanoscale sensors
WO2006132659A2 (en) 2005-06-06 2006-12-14 President And Fellows Of Harvard College Nanowire heterostructures
WO2007002297A2 (en) * 2005-06-24 2007-01-04 Crafts Douglas E Temporary planar electrical contact device and method using vertically-compressible nanotube contact structures
US7989797B2 (en) * 2005-12-20 2011-08-02 The Invention Science Fund I, Llc Connectible nanotube circuit
US7696505B2 (en) * 2005-12-20 2010-04-13 Searete Llc Connectible nanotube circuit
US9159417B2 (en) * 2005-12-20 2015-10-13 The Invention Science Fund I, Llc Deletable nanotube circuit
US7786465B2 (en) 2005-12-20 2010-08-31 Invention Science Fund 1, Llc Deletable nanotube circuit
US9965251B2 (en) * 2006-04-03 2018-05-08 Blaise Laurent Mouttet Crossbar arithmetic and summation processor
US20070233761A1 (en) * 2006-04-03 2007-10-04 Mouttet Blaise L Crossbar arithmetic processor
US7576565B2 (en) * 2006-04-03 2009-08-18 Blaise Laurent Mouttet Crossbar waveform driver circuit
US8183554B2 (en) * 2006-04-03 2012-05-22 Blaise Laurent Mouttet Symmetrical programmable memresistor crossbar structure
US7302513B2 (en) * 2006-04-03 2007-11-27 Blaise Laurent Mouttet Programmable crossbar signal processor
CA2655340C (en) 2006-06-12 2016-10-25 President And Fellows Of Harvard College Nanosensors and related technologies
US7763932B2 (en) * 2006-06-29 2010-07-27 International Business Machines Corporation Multi-bit high-density memory device and architecture and method of fabricating multi-bit high-density memory devices
TWI307677B (en) * 2006-07-18 2009-03-21 Applied Res Lab Method and device for fabricating nano-structure with patterned particle beam
US7393739B2 (en) * 2006-08-30 2008-07-01 International Business Machines Corporation Demultiplexers using transistors for accessing memory cell arrays
WO2008033303A2 (en) 2006-09-11 2008-03-20 President And Fellows Of Harvard College Branched nanoscale wires
EP2064744A2 (en) * 2006-09-19 2009-06-03 QuNano AB Assembly of nanoscaled field effect transistors
US7778061B2 (en) * 2006-10-16 2010-08-17 Hewlett-Packard Development Company, L.P. Crossbar-memory systems and methods for writing to and reading from crossbar memory junctions of crossbar-memory systems
US8130007B2 (en) * 2006-10-16 2012-03-06 Formfactor, Inc. Probe card assembly with carbon nanotube probes having a spring mechanism therein
TWI463713B (zh) 2006-11-09 2014-12-01 南諾西斯股份有限公司 用於奈米導線對準及沈積的方法
WO2008127314A1 (en) 2006-11-22 2008-10-23 President And Fellows Of Harvard College High-sensitivity nanoscale wire sensors
US9806273B2 (en) * 2007-01-03 2017-10-31 The United States Of America As Represented By The Secretary Of The Army Field effect transistor array using single wall carbon nano-tubes
US7608854B2 (en) * 2007-01-29 2009-10-27 Hewlett-Packard Development Company, L.P. Electronic device and method of making the same
US7763978B2 (en) * 2007-03-28 2010-07-27 Hewlett-Packard Development Company, L.P. Three-dimensional crossbar array systems and methods for writing information to and reading information stored in three-dimensional crossbar array junctions
US7872334B2 (en) * 2007-05-04 2011-01-18 International Business Machines Corporation Carbon nanotube diodes and electrostatic discharge circuits and methods
US7492624B2 (en) * 2007-06-29 2009-02-17 Stmicroelectronics S.R.L. Method and device for demultiplexing a crossbar non-volatile memory
US20110089400A1 (en) * 2008-04-15 2011-04-21 Qunano Ab Nanowire wrap gate devices
JP2012506621A (ja) * 2008-10-20 2012-03-15 ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・ミシガン シリコン系ナノスケールクロスバーメモリ
WO2010126468A1 (en) * 2009-04-30 2010-11-04 Hewlett-Packard Development Company, L.P. Dense nanoscale logic circuitry
JP2012528020A (ja) 2009-05-26 2012-11-12 ナノシス・インク． ナノワイヤおよび他のデバイスの電場沈着のための方法およびシステム
WO2011038228A1 (en) 2009-09-24 2011-03-31 President And Fellows Of Harvard College Bent nanowires and related probing of species
KR101161060B1 (ko) * 2009-11-30 2012-06-29 서강대학교산학협력단 나노입자를 기둥형태로 조직화시키기 위한 배열장치 및 그 배열방법
US9181089B2 (en) 2010-01-15 2015-11-10 Board Of Regents Of The University Of Texas System Carbon nanotube crossbar based nano-architecture
US9324718B2 (en) 2010-01-29 2016-04-26 Hewlett Packard Enterprise Development Lp Three dimensional multilayer circuit
US7982504B1 (en) 2010-01-29 2011-07-19 Hewlett Packard Development Company, L.P. Interconnection architecture for multilayer circuits
US9368599B2 (en) 2010-06-22 2016-06-14 International Business Machines Corporation Graphene/nanostructure FET with self-aligned contact and gate
US8872176B2 (en) 2010-10-06 2014-10-28 Formfactor, Inc. Elastic encapsulated carbon nanotube based electrical contacts
US9273004B2 (en) 2011-09-29 2016-03-01 International Business Machines Corporation Selective placement of carbon nanotubes via coulombic attraction of oppositely charged carbon nanotubes and self-assembled monolayers
US9442695B2 (en) 2014-05-02 2016-09-13 International Business Machines Corporation Random bit generator based on nanomaterials
US9720772B2 (en) * 2015-03-04 2017-08-01 Kabushiki Kaisha Toshiba Memory system, method for controlling magnetic memory, and device for controlling magnetic memory
CN107564946A (zh) * 2016-07-01 2018-01-09 清华大学 纳米晶体管
CN107564947A (zh) * 2016-07-01 2018-01-09 清华大学 纳米异质结构
CN107564917B (zh) * 2016-07-01 2020-06-09 清华大学 纳米异质结构
CN107564910B (zh) * 2016-07-01 2020-08-11 清华大学 半导体器件
US11943940B2 (en) 2018-07-11 2024-03-26 The Regents Of The University Of California Nucleic acid-based electrically readable, read-only memory

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2264928T3 (es) 1999-02-12 2007-02-01 Board Of Trustees Operating Michigan State University Nanocapsulas que contienen particulas cargadas, sus usos y procedimientos de preparacion de las mismas.
US6314019B1 (en) * 1999-03-29 2001-11-06 Hewlett-Packard Company Molecular-wire crossbar interconnect (MWCI) for signal routing and communications
US6128214A (en) * 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6256767B1 (en) 1999-03-29 2001-07-03 Hewlett-Packard Company Demultiplexer for a molecular wire crossbar network (MWCN DEMUX)
US6383784B1 (en) 1999-12-03 2002-05-07 City Of Hope Construction of nucleoprotein based assemblies comprising addressable components for nanoscale assembly and nanoprocessors
US6798000B2 (en) * 2000-07-04 2004-09-28 Infineon Technologies Ag Field effect transistor
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
WO2002103753A2 (en) 2000-11-01 2002-12-27 Myrick James J Nanoelectronic interconnection and addressing
CA2442985C (en) * 2001-03-30 2016-05-31 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US6777982B2 (en) * 2001-04-03 2004-08-17 Carnegie Mellon University Molecular scale latch and associated clocking scheme to provide gain, memory and I/O isolation
US6385075B1 (en) * 2001-06-05 2002-05-07 Hewlett-Packard Company Parallel access of cross-point diode memory arrays
US6706402B2 (en) * 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US7073157B2 (en) * 2002-01-18 2006-07-04 California Institute Of Technology Array-based architecture for molecular electronics
US6760245B2 (en) * 2002-05-01 2004-07-06 Hewlett-Packard Development Company, L.P. Molecular wire crossbar flash memory
DE60313462T2 (de) 2002-07-25 2008-01-03 California Institute Of Technology, Pasadena Sublithographische nanobereichs-speicherarchitektur
US6682951B1 (en) * 2002-09-26 2004-01-27 International Business Machines Corporation Arrangements of microscopic particles for performing logic computations, and method of use

Also Published As

Publication number Publication date
WO2004034467A2 (en) 2004-04-22
EP1525586B1 (en) 2007-04-25
AU2003298529A8 (en) 2004-07-29
ATE360873T1 (de) 2007-05-15
DE60313462T2 (de) 2008-01-03
ATE421147T1 (de) 2009-01-15
US20040113139A1 (en) 2004-06-17
DE60313462D1 (de) 2007-06-06
JP2005539404A (ja) 2005-12-22
DE60325903D1 (de) 2009-03-05
EP1758126A2 (en) 2007-02-28
AU2003298530A1 (en) 2004-05-04
US6900479B2 (en) 2005-05-31
EP1525585A2 (en) 2005-04-27
US6963077B2 (en) 2005-11-08
JP2006512782A (ja) 2006-04-13
AU2003298530A8 (en) 2004-05-04
US20040113138A1 (en) 2004-06-17
EP1525586A2 (en) 2005-04-27
WO2004034467A3 (en) 2004-08-26
EP1758126A3 (en) 2007-03-14
WO2004061859A2 (en) 2004-07-22
WO2004061859A3 (en) 2005-02-03

Similar Documents

Publication Publication Date Title
AU2003298529A1 (en) Stochastic assembly of sublithographic nanoscale interfaces
AU2003240780A1 (en) Electrically conductive yarn comprising metal fibers
WO2003077395A3 (en) Multi-element fuse array
EP2316850A3 (en) HASylated polypeptides, especially HASylated erythropoietin
JP2002519182A5 (https=)
AU5857499A (en) Conjugated polymers containing 2,7 fluorenyl units with improved properties
WO2004014998A3 (en) Plasticized polyolefin compositions
JP2004535435A5 (https=)
SI1140828T1 (sl) 3-azabiciklo(3.1.0)heksanski derivati kot ligandi opiatnih receptorjev
EP1918326B8 (en) Conductive composition
AU2003229026A1 (en) Water-soluble electrically conductive composition, modifications, and applications thereof
AU2002354941A1 (en) Mll translocations specify a distinct gene expression profile, distinguishing a unique leukemia
AU2001275536A1 (en) Fatigue-resistant conductive wire article
AU2003240806A1 (en) Selective hydrogenation catalyst
AU2001284352A1 (en) Monitoring cable
WO2004019385A3 (fr) Support de garniture et procede de garniture selective de plages conductrices d'un tel support
EG23439A (en) Olefins production process.
WO2004047192A3 (en) Electro-active actuator
MXPA01010570A (es) Proceso para electrochapar una pieza de trabajo revestida con un polimero electricamente conductor.
WO2004037909A3 (en) Charge dissipation modifiers for olefinic interpolymer compositions
AU1328101A (en) Engineering disease resistance with pectate lyase-like genes
AU1579695A (en) An electrically conducting polymer composition, its production and its use
IL139540A0 (en) Electrically addressable matrix structure
DE59811558D1 (de) Reinigungs-Dachplatte
AU2369100A (en) Plant disease resistance genes

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase