ATE360873T1 - Sublithographische nanobereichs- speicherarchitektur - Google Patents

Sublithographische nanobereichs- speicherarchitektur

Info

Publication number
ATE360873T1
ATE360873T1 AT03796282T AT03796282T ATE360873T1 AT E360873 T1 ATE360873 T1 AT E360873T1 AT 03796282 T AT03796282 T AT 03796282T AT 03796282 T AT03796282 T AT 03796282T AT E360873 T1 ATE360873 T1 AT E360873T1
Authority
AT
Austria
Prior art keywords
nanoscale
nanodoge
sublithographic
wires
storage architecture
Prior art date
Application number
AT03796282T
Other languages
German (de)
English (en)
Inventor
Andre Dehon
Charles M Lieber
Patrick D Lincoln
John Savage
Original Assignee
California Inst Of Techn
Harvard College
Stanford Res Inst Int
Univ Brown
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by California Inst Of Techn, Harvard College, Stanford Res Inst Int, Univ Brown filed Critical California Inst Of Techn
Application granted granted Critical
Publication of ATE360873T1 publication Critical patent/ATE360873T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Micro-Organisms Or Cultivation Processes Thereof (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Prostheses (AREA)
  • Silicon Compounds (AREA)
  • Ropes Or Cables (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)
AT03796282T 2002-07-25 2003-07-24 Sublithographische nanobereichs- speicherarchitektur ATE360873T1 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US39894302P 2002-07-25 2002-07-25
US40039402P 2002-08-01 2002-08-01
US41517602P 2002-09-30 2002-09-30
US42901002P 2002-11-25 2002-11-25
US44199503P 2003-01-23 2003-01-23
US46535703P 2003-04-25 2003-04-25
US46738803P 2003-05-02 2003-05-02

Publications (1)

Publication Number Publication Date
ATE360873T1 true ATE360873T1 (de) 2007-05-15

Family

ID=32097212

Family Applications (2)

Application Number Title Priority Date Filing Date
AT03796282T ATE360873T1 (de) 2002-07-25 2003-07-24 Sublithographische nanobereichs- speicherarchitektur
AT05025371T ATE421147T1 (de) 2002-07-25 2003-07-24 Dreidimensionales speicher-array

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT05025371T ATE421147T1 (de) 2002-07-25 2003-07-24 Dreidimensionales speicher-array

Country Status (7)

Country Link
US (2) US6900479B2 (https=)
EP (3) EP1758126A3 (https=)
JP (2) JP2006512782A (https=)
AT (2) ATE360873T1 (https=)
AU (2) AU2003298529A1 (https=)
DE (2) DE60325903D1 (https=)
WO (2) WO2004034467A2 (https=)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
CN101887935B (zh) * 2000-08-22 2013-09-11 哈佛学院董事会 掺杂的拉长半导体,其生长,包含这类半导体的器件及其制造
US20060175601A1 (en) * 2000-08-22 2006-08-10 President And Fellows Of Harvard College Nanoscale wires and related devices
KR20030055346A (ko) * 2000-12-11 2003-07-02 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 나노센서
EP1468423A2 (en) * 2002-01-18 2004-10-20 California Institute Of Technology Array-based architecture for molecular electronics
AU2003261205A1 (en) 2002-07-19 2004-02-09 President And Fellows Of Harvard College Nanoscale coherent optical components
JP2006512782A (ja) * 2002-07-25 2006-04-13 カリフォルニア インスティテュート オヴ テクノロジー サブパターン転写ナノスケールインターフェースの確率的組立体
DE60212118T2 (de) * 2002-08-08 2007-01-04 Sony Deutschland Gmbh Verfahren zur Herstellung einer Kreuzschienenstruktur von Nanodrähten
CA2499965C (en) * 2002-09-30 2013-03-19 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
US7135728B2 (en) * 2002-09-30 2006-11-14 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
WO2004109706A2 (en) 2003-06-02 2004-12-16 California Institute Of Technology Nanoscale wire-based sublithographic programmable logic arrays
US7242601B2 (en) 2003-06-02 2007-07-10 California Institute Of Technology Deterministic addressing of nanoscale devices assembled at sublithographic pitches
WO2005029498A2 (en) 2003-07-24 2005-03-31 California Institute Of Technology Nanoscale wire coding for stochastic assembly
WO2005084164A2 (en) * 2003-08-13 2005-09-15 Nantero, Inc. Nanotube-based switching elements and logic circuits
US7018549B2 (en) * 2003-12-29 2006-03-28 Intel Corporation Method of fabricating multiple nanowires of uniform length from a single catalytic nanoparticle
US20090227107A9 (en) * 2004-02-13 2009-09-10 President And Fellows Of Havard College Nanostructures Containing Metal Semiconductor Compounds
US7049626B1 (en) * 2004-04-02 2006-05-23 Hewlett-Packard Development Company, L.P. Misalignment-tolerant electronic interfaces and methods for producing misalignment-tolerant electronic interfaces
US7310004B2 (en) * 2004-05-28 2007-12-18 California Institute Of Technology Apparatus and method of interconnecting nanoscale programmable logic array clusters
WO2006107312A1 (en) * 2004-06-15 2006-10-12 President And Fellows Of Harvard College Nanosensors
CN101010793B (zh) * 2004-06-30 2011-09-28 Nxp股份有限公司 制造具有通过纳米线接触的导电材料层的电子器件的方法
US7495942B2 (en) 2004-08-13 2009-02-24 University Of Florida Research Foundation, Inc. Nanoscale content-addressable memory
TWI348169B (en) * 2004-09-21 2011-09-01 Nantero Inc Resistive elements using carbon nanotubes
US7544977B2 (en) * 2006-01-27 2009-06-09 Hewlett-Packard Development Company, L.P. Mixed-scale electronic interface
CN101124638A (zh) * 2004-12-06 2008-02-13 哈佛大学 基于纳米尺度线的数据存储
US8883568B2 (en) 2008-06-10 2014-11-11 Brown University Research Foundation Method providing radial addressing of nanowires
WO2006084128A2 (en) * 2005-02-04 2006-08-10 Brown University Apparatus, method and computer program product providing radial addressing of nanowires
US7211503B2 (en) * 2005-02-24 2007-05-01 Hewlett-Packard Development Company, L.P. Electronic devices fabricated by use of random connections
DE102005016244A1 (de) * 2005-04-08 2006-10-19 Infineon Technologies Ag Speicherzelle, Speichereinrichtung und Verfahren zu deren Herstellung
US7786467B2 (en) * 2005-04-25 2010-08-31 Hewlett-Packard Development Company, L.P. Three-dimensional nanoscale crossbars
US20100227382A1 (en) * 2005-05-25 2010-09-09 President And Fellows Of Harvard College Nanoscale sensors
WO2006132659A2 (en) 2005-06-06 2006-12-14 President And Fellows Of Harvard College Nanowire heterostructures
WO2007002297A2 (en) * 2005-06-24 2007-01-04 Crafts Douglas E Temporary planar electrical contact device and method using vertically-compressible nanotube contact structures
US9159417B2 (en) * 2005-12-20 2015-10-13 The Invention Science Fund I, Llc Deletable nanotube circuit
US7989797B2 (en) * 2005-12-20 2011-08-02 The Invention Science Fund I, Llc Connectible nanotube circuit
US7696505B2 (en) * 2005-12-20 2010-04-13 Searete Llc Connectible nanotube circuit
US7786465B2 (en) * 2005-12-20 2010-08-31 Invention Science Fund 1, Llc Deletable nanotube circuit
US7302513B2 (en) * 2006-04-03 2007-11-27 Blaise Laurent Mouttet Programmable crossbar signal processor
US9965251B2 (en) * 2006-04-03 2018-05-08 Blaise Laurent Mouttet Crossbar arithmetic and summation processor
US7576565B2 (en) * 2006-04-03 2009-08-18 Blaise Laurent Mouttet Crossbar waveform driver circuit
US8183554B2 (en) * 2006-04-03 2012-05-22 Blaise Laurent Mouttet Symmetrical programmable memresistor crossbar structure
US20070233761A1 (en) * 2006-04-03 2007-10-04 Mouttet Blaise L Crossbar arithmetic processor
US9102521B2 (en) 2006-06-12 2015-08-11 President And Fellows Of Harvard College Nanosensors and related technologies
US7763932B2 (en) * 2006-06-29 2010-07-27 International Business Machines Corporation Multi-bit high-density memory device and architecture and method of fabricating multi-bit high-density memory devices
TWI307677B (en) * 2006-07-18 2009-03-21 Applied Res Lab Method and device for fabricating nano-structure with patterned particle beam
US7393739B2 (en) * 2006-08-30 2008-07-01 International Business Machines Corporation Demultiplexers using transistors for accessing memory cell arrays
US8058640B2 (en) 2006-09-11 2011-11-15 President And Fellows Of Harvard College Branched nanoscale wires
KR20090075819A (ko) 2006-09-19 2009-07-09 큐나노 에이비 나노스케일 전계 효과 트랜지스터의 조립체
US7778061B2 (en) * 2006-10-16 2010-08-17 Hewlett-Packard Development Company, L.P. Crossbar-memory systems and methods for writing to and reading from crossbar memory junctions of crossbar-memory systems
US8130007B2 (en) * 2006-10-16 2012-03-06 Formfactor, Inc. Probe card assembly with carbon nanotube probes having a spring mechanism therein
US7968474B2 (en) 2006-11-09 2011-06-28 Nanosys, Inc. Methods for nanowire alignment and deposition
WO2008127314A1 (en) 2006-11-22 2008-10-23 President And Fellows Of Harvard College High-sensitivity nanoscale wire sensors
US9806273B2 (en) * 2007-01-03 2017-10-31 The United States Of America As Represented By The Secretary Of The Army Field effect transistor array using single wall carbon nano-tubes
US7608854B2 (en) * 2007-01-29 2009-10-27 Hewlett-Packard Development Company, L.P. Electronic device and method of making the same
US7763978B2 (en) * 2007-03-28 2010-07-27 Hewlett-Packard Development Company, L.P. Three-dimensional crossbar array systems and methods for writing information to and reading information stored in three-dimensional crossbar array junctions
US7872334B2 (en) * 2007-05-04 2011-01-18 International Business Machines Corporation Carbon nanotube diodes and electrostatic discharge circuits and methods
US7492624B2 (en) * 2007-06-29 2009-02-17 Stmicroelectronics S.R.L. Method and device for demultiplexing a crossbar non-volatile memory
JP2011523200A (ja) * 2008-04-15 2011-08-04 クナノ アーベー ナノワイヤラップゲートデバイス
WO2010048127A2 (en) * 2008-10-20 2010-04-29 The Regents Of The University Of Michigan A silicon based nanoscale crossbar memory
US8390323B2 (en) 2009-04-30 2013-03-05 Hewlett-Packard Development Company, L.P. Dense nanoscale logic circuitry
JP2012528020A (ja) 2009-05-26 2012-11-12 ナノシス・インク． ナノワイヤおよび他のデバイスの電場沈着のための方法およびシステム
US9297796B2 (en) 2009-09-24 2016-03-29 President And Fellows Of Harvard College Bent nanowires and related probing of species
KR101161060B1 (ko) * 2009-11-30 2012-06-29 서강대학교산학협력단 나노입자를 기둥형태로 조직화시키기 위한 배열장치 및 그 배열방법
US9181089B2 (en) 2010-01-15 2015-11-10 Board Of Regents Of The University Of Texas System Carbon nanotube crossbar based nano-architecture
US7982504B1 (en) 2010-01-29 2011-07-19 Hewlett Packard Development Company, L.P. Interconnection architecture for multilayer circuits
US9324718B2 (en) 2010-01-29 2016-04-26 Hewlett Packard Enterprise Development Lp Three dimensional multilayer circuit
US9368599B2 (en) 2010-06-22 2016-06-14 International Business Machines Corporation Graphene/nanostructure FET with self-aligned contact and gate
US8872176B2 (en) 2010-10-06 2014-10-28 Formfactor, Inc. Elastic encapsulated carbon nanotube based electrical contacts
US9273004B2 (en) 2011-09-29 2016-03-01 International Business Machines Corporation Selective placement of carbon nanotubes via coulombic attraction of oppositely charged carbon nanotubes and self-assembled monolayers
US9442695B2 (en) 2014-05-02 2016-09-13 International Business Machines Corporation Random bit generator based on nanomaterials
US9720772B2 (en) * 2015-03-04 2017-08-01 Kabushiki Kaisha Toshiba Memory system, method for controlling magnetic memory, and device for controlling magnetic memory
CN107564946A (zh) * 2016-07-01 2018-01-09 清华大学 纳米晶体管
CN107564917B (zh) * 2016-07-01 2020-06-09 清华大学 纳米异质结构
CN107564910B (zh) * 2016-07-01 2020-08-11 清华大学 半导体器件
CN107564947A (zh) * 2016-07-01 2018-01-09 清华大学 纳米异质结构
US11943940B2 (en) 2018-07-11 2024-03-26 The Regents Of The University Of California Nucleic acid-based electrically readable, read-only memory

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4658329B2 (ja) 1999-02-12 2011-03-23 ボード オブ トラスティーズ，オブ ミシガン ステイト ユニバーシティ 帯電粒子を収容するナノカプセル、その用法及び形成法
US6256767B1 (en) * 1999-03-29 2001-07-03 Hewlett-Packard Company Demultiplexer for a molecular wire crossbar network (MWCN DEMUX)
US6314019B1 (en) * 1999-03-29 2001-11-06 Hewlett-Packard Company Molecular-wire crossbar interconnect (MWCI) for signal routing and communications
US6128214A (en) 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6383784B1 (en) 1999-12-03 2002-05-07 City Of Hope Construction of nucleoprotein based assemblies comprising addressable components for nanoscale assembly and nanoprocessors
EP1299914B1 (de) * 2000-07-04 2008-04-02 Qimonda AG Feldeffekttransistor
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
AU2001297881A1 (en) 2000-11-01 2003-01-02 James J. Myrick Nanoelectronic interconnection and addressing
EP1374309A1 (en) * 2001-03-30 2004-01-02 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
AU2002307129A1 (en) * 2001-04-03 2002-10-21 Carnegie Mellon University Electronic circuit device, system and method
US6385075B1 (en) * 2001-06-05 2002-05-07 Hewlett-Packard Company Parallel access of cross-point diode memory arrays
US6706402B2 (en) * 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
EP1468423A2 (en) * 2002-01-18 2004-10-20 California Institute Of Technology Array-based architecture for molecular electronics
US6760245B2 (en) * 2002-05-01 2004-07-06 Hewlett-Packard Development Company, L.P. Molecular wire crossbar flash memory
JP2006512782A (ja) 2002-07-25 2006-04-13 カリフォルニア インスティテュート オヴ テクノロジー サブパターン転写ナノスケールインターフェースの確率的組立体
US6682951B1 (en) * 2002-09-26 2004-01-27 International Business Machines Corporation Arrangements of microscopic particles for performing logic computations, and method of use

Also Published As

Publication number Publication date
EP1525586B1 (en) 2007-04-25
US20040113138A1 (en) 2004-06-17
AU2003298530A8 (en) 2004-05-04
AU2003298529A1 (en) 2004-07-29
EP1525585A2 (en) 2005-04-27
WO2004061859A3 (en) 2005-02-03
US6963077B2 (en) 2005-11-08
ATE421147T1 (de) 2009-01-15
WO2004034467A3 (en) 2004-08-26
DE60313462T2 (de) 2008-01-03
DE60325903D1 (de) 2009-03-05
WO2004061859A2 (en) 2004-07-22
AU2003298530A1 (en) 2004-05-04
US6900479B2 (en) 2005-05-31
EP1525586A2 (en) 2005-04-27
AU2003298529A8 (en) 2004-07-29
EP1758126A2 (en) 2007-02-28
JP2006512782A (ja) 2006-04-13
WO2004034467A2 (en) 2004-04-22
DE60313462D1 (de) 2007-06-06
EP1758126A3 (en) 2007-03-14
JP2005539404A (ja) 2005-12-22
US20040113139A1 (en) 2004-06-17

Similar Documents

Publication Publication Date Title
ATE360873T1 (de) Sublithographische nanobereichs- speicherarchitektur
JP2002519182A5 (https=)
JP2004535435A5 (https=)
ATE380194T1 (de) 6.alpha.,9.alpha.-difluoro-17.alpha.-(2-
ATE383433T1 (de) Pflanzen mit veränderten mehrfachungesättigten fettsäuren
MY141568A (en) Semiconductor device and method of manufacturing the same
ATE254593T1 (de) 2,4-pentadiensäurederivate mit selektiver wirkung auf die retinoid x (rxr) rezeptoren
DE69800106D1 (de) Korrosionsbeständige, hochfeste Kupferlegierung mit guter Stanzbarkeit
DE602004012496D1 (de) Spielzeug
WO2004037909A3 (en) Charge dissipation modifiers for olefinic interpolymer compositions
DE69330580D1 (de) Eisen-Chrom-Legierung mit hoher Korrosionsbeständigkeit
EP1630819A3 (en) Three-dimensional memory array
Friedman Working out the kinks: Advancing the pornography debate
FR2855891B1 (fr) Module a carte a puce
TH72801S (th) สายไฟฟ้า
TH20072S1 (th) สายไฟฟ้า
TH17864S1 (th) อุปกรณ์ทำให้สารเคมีระเหย
TH47234S (https=)
TH15864S1 (https=)
TH15865S1 (th) เทียน(ไฟฟ้า)
TH47235S (th) เทียน(ไฟฟ้า)
TH15200S1 (th) ขวด
TH62346S (th) รางปลูกผัก
RU96105659A (ru) Паяльник электрический
RU2002128306A (ru) Лоток для кабелей

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties