JP2005539404A - サブパターン転写ナノスケールメモリ構造 - Google Patents

サブパターン転写ナノスケールメモリ構造 Download PDF

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Publication number
JP2005539404A
JP2005539404A JP2005501049A JP2005501049A JP2005539404A JP 2005539404 A JP2005539404 A JP 2005539404A JP 2005501049 A JP2005501049 A JP 2005501049A JP 2005501049 A JP2005501049 A JP 2005501049A JP 2005539404 A JP2005539404 A JP 2005539404A
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JP
Japan
Prior art keywords
wiring
nanoscale
microscale
memory array
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005501049A
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English (en)
Japanese (ja)
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JP2005539404A5 (https=
Inventor
デオン，アンドレ
エム リーバー，チャールズ
ディー リンカーン，パトリック
サヴェージ，ジョン
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SRI International Inc
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SRI International Inc
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Filing date
Publication date
Application filed by SRI International Inc filed Critical SRI International Inc
Publication of JP2005539404A publication Critical patent/JP2005539404A/ja
Publication of JP2005539404A5 publication Critical patent/JP2005539404A5/ja
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Micro-Organisms Or Cultivation Processes Thereof (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Prostheses (AREA)
  • Silicon Compounds (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Read Only Memory (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)
  • Ropes Or Cables (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2005501049A 2002-07-25 2003-07-24 サブパターン転写ナノスケールメモリ構造 Pending JP2005539404A (ja)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US39894302P 2002-07-25 2002-07-25
US40039402P 2002-08-01 2002-08-01
US41517602P 2002-09-30 2002-09-30
US42901002P 2002-11-25 2002-11-25
US44199503P 2003-01-23 2003-01-23
US46535703P 2003-04-25 2003-04-25
US46738803P 2003-05-02 2003-05-02
PCT/US2003/023199 WO2004034467A2 (en) 2002-07-25 2003-07-24 Sublithographic nanoscale memory architecture

Publications (2)

Publication Number Publication Date
JP2005539404A true JP2005539404A (ja) 2005-12-22
JP2005539404A5 JP2005539404A5 (https=) 2006-09-07

Family

ID=32097212

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2005501049A Pending JP2005539404A (ja) 2002-07-25 2003-07-24 サブパターン転写ナノスケールメモリ構造
JP2005508519A Pending JP2006512782A (ja) 2002-07-25 2003-07-24 サブパターン転写ナノスケールインターフェースの確率的組立体

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2005508519A Pending JP2006512782A (ja) 2002-07-25 2003-07-24 サブパターン転写ナノスケールインターフェースの確率的組立体

Country Status (7)

Country Link
US (2) US6900479B2 (https=)
EP (3) EP1525586B1 (https=)
JP (2) JP2005539404A (https=)
AT (2) ATE360873T1 (https=)
AU (2) AU2003298529A1 (https=)
DE (2) DE60313462T2 (https=)
WO (2) WO2004061859A2 (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009525193A (ja) * 2006-01-27 2009-07-09 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． ミックススケール電子界面
KR101409310B1 (ko) * 2007-03-28 2014-06-18 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 3차원 크로스바 어레이 접합에 저장된 정보를 판독 및 기록하기 위한 3차원 크로스바 어레이 시스템 및 방법
JP2018006754A (ja) * 2016-07-01 2018-01-11 ツィンファ ユニバーシティ ナノヘテロ接合構造
JP2018006755A (ja) * 2016-07-01 2018-01-11 ツィンファ ユニバーシティ ナノトランジスタ
JP2018006757A (ja) * 2016-07-01 2018-01-11 ツィンファ ユニバーシティ 半導体素子
JP2018006756A (ja) * 2016-07-01 2018-01-11 ツィンファ ユニバーシティ ナノヘテロ接合構造

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US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
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US20060175601A1 (en) * 2000-08-22 2006-08-10 President And Fellows Of Harvard College Nanoscale wires and related devices
ATE408140T1 (de) * 2000-12-11 2008-09-15 Harvard College Vorrichtung enthaltend nanosensoren zur ekennung eines analyten und verfahren zu ihrer herstellung
US7073157B2 (en) * 2002-01-18 2006-07-04 California Institute Of Technology Array-based architecture for molecular electronics
WO2004010552A1 (en) 2002-07-19 2004-01-29 President And Fellows Of Harvard College Nanoscale coherent optical components
DE60313462T2 (de) 2002-07-25 2008-01-03 California Institute Of Technology, Pasadena Sublithographische nanobereichs-speicherarchitektur
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US7242601B2 (en) * 2003-06-02 2007-07-10 California Institute Of Technology Deterministic addressing of nanoscale devices assembled at sublithographic pitches
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US7692952B2 (en) * 2003-07-24 2010-04-06 California Institute Of Technology Nanoscale wire coding for stochastic assembly
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Publication number Priority date Publication date Assignee Title
JP2009525193A (ja) * 2006-01-27 2009-07-09 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． ミックススケール電子界面
KR101409310B1 (ko) * 2007-03-28 2014-06-18 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 3차원 크로스바 어레이 접합에 저장된 정보를 판독 및 기록하기 위한 3차원 크로스바 어레이 시스템 및 방법
JP2018006754A (ja) * 2016-07-01 2018-01-11 ツィンファ ユニバーシティ ナノヘテロ接合構造
JP2018006755A (ja) * 2016-07-01 2018-01-11 ツィンファ ユニバーシティ ナノトランジスタ
JP2018006757A (ja) * 2016-07-01 2018-01-11 ツィンファ ユニバーシティ 半導体素子
JP2018006756A (ja) * 2016-07-01 2018-01-11 ツィンファ ユニバーシティ ナノヘテロ接合構造

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AU2003298529A8 (en) 2004-07-29
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DE60313462T2 (de) 2008-01-03
ATE421147T1 (de) 2009-01-15
US20040113139A1 (en) 2004-06-17
DE60313462D1 (de) 2007-06-06
DE60325903D1 (de) 2009-03-05
AU2003298529A1 (en) 2004-07-29
EP1758126A2 (en) 2007-02-28
AU2003298530A1 (en) 2004-05-04
US6900479B2 (en) 2005-05-31
EP1525585A2 (en) 2005-04-27
US6963077B2 (en) 2005-11-08
JP2006512782A (ja) 2006-04-13
AU2003298530A8 (en) 2004-05-04
US20040113138A1 (en) 2004-06-17
EP1525586A2 (en) 2005-04-27
WO2004034467A3 (en) 2004-08-26
EP1758126A3 (en) 2007-03-14
WO2004061859A2 (en) 2004-07-22
WO2004061859A3 (en) 2005-02-03

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