JP2006512782A5 - - Google Patents

Download PDF

Info

Publication number
JP2006512782A5
JP2006512782A5 JP2005508519A JP2005508519A JP2006512782A5 JP 2006512782 A5 JP2006512782 A5 JP 2006512782A5 JP 2005508519 A JP2005508519 A JP 2005508519A JP 2005508519 A JP2005508519 A JP 2005508519A JP 2006512782 A5 JP2006512782 A5 JP 2006512782A5
Authority
JP
Japan
Prior art keywords
nanoscale
wiring
region
control
controllable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005508519A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006512782A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2003/023198 external-priority patent/WO2004061859A2/en
Publication of JP2006512782A publication Critical patent/JP2006512782A/ja
Publication of JP2006512782A5 publication Critical patent/JP2006512782A5/ja
Pending legal-status Critical Current

Links

JP2005508519A 2002-07-25 2003-07-24 サブパターン転写ナノスケールインターフェースの確率的組立体 Pending JP2006512782A (ja)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US39894302P 2002-07-25 2002-07-25
US40039402P 2002-08-01 2002-08-01
US41517602P 2002-09-30 2002-09-30
US42901002P 2002-11-25 2002-11-25
US44199503P 2003-01-23 2003-01-23
US46535703P 2003-04-25 2003-04-25
US46738803P 2003-05-02 2003-05-02
PCT/US2003/023198 WO2004061859A2 (en) 2002-07-25 2003-07-24 Stochastic assembly of sublithographic nanoscale interfaces

Publications (2)

Publication Number Publication Date
JP2006512782A JP2006512782A (ja) 2006-04-13
JP2006512782A5 true JP2006512782A5 (enExample) 2006-09-07

Family

ID=32097212

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2005501049A Pending JP2005539404A (ja) 2002-07-25 2003-07-24 サブパターン転写ナノスケールメモリ構造
JP2005508519A Pending JP2006512782A (ja) 2002-07-25 2003-07-24 サブパターン転写ナノスケールインターフェースの確率的組立体

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2005501049A Pending JP2005539404A (ja) 2002-07-25 2003-07-24 サブパターン転写ナノスケールメモリ構造

Country Status (7)

Country Link
US (2) US6900479B2 (enExample)
EP (3) EP1525585A2 (enExample)
JP (2) JP2005539404A (enExample)
AT (2) ATE421147T1 (enExample)
AU (2) AU2003298529A1 (enExample)
DE (2) DE60325903D1 (enExample)
WO (2) WO2004034467A2 (enExample)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060175601A1 (en) * 2000-08-22 2006-08-10 President And Fellows Of Harvard College Nanoscale wires and related devices
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
WO2002017362A2 (en) * 2000-08-22 2002-02-28 President And Fellows Of Harvard College Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
EP1342075B1 (en) * 2000-12-11 2008-09-10 President And Fellows Of Harvard College Device contaning nanosensors for detecting an analyte and its method of manufacture
EP1468423A2 (en) * 2002-01-18 2004-10-20 California Institute Of Technology Array-based architecture for molecular electronics
WO2004010552A1 (en) 2002-07-19 2004-01-29 President And Fellows Of Harvard College Nanoscale coherent optical components
WO2004034467A2 (en) 2002-07-25 2004-04-22 California Institute Of Technology Sublithographic nanoscale memory architecture
DE60212118T2 (de) * 2002-08-08 2007-01-04 Sony Deutschland Gmbh Verfahren zur Herstellung einer Kreuzschienenstruktur von Nanodrähten
KR101191632B1 (ko) 2002-09-30 2012-10-17 나노시스, 인크. 대형 나노 인에이블 매크로전자 기판 및 그 사용
US7135728B2 (en) * 2002-09-30 2006-11-14 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
US7242601B2 (en) 2003-06-02 2007-07-10 California Institute Of Technology Deterministic addressing of nanoscale devices assembled at sublithographic pitches
WO2004109706A2 (en) 2003-06-02 2004-12-16 California Institute Of Technology Nanoscale wire-based sublithographic programmable logic arrays
US7692952B2 (en) * 2003-07-24 2010-04-06 California Institute Of Technology Nanoscale wire coding for stochastic assembly
WO2005084164A2 (en) * 2003-08-13 2005-09-15 Nantero, Inc. Nanotube-based switching elements and logic circuits
US7018549B2 (en) * 2003-12-29 2006-03-28 Intel Corporation Method of fabricating multiple nanowires of uniform length from a single catalytic nanoparticle
US20090227107A9 (en) * 2004-02-13 2009-09-10 President And Fellows Of Havard College Nanostructures Containing Metal Semiconductor Compounds
US7049626B1 (en) * 2004-04-02 2006-05-23 Hewlett-Packard Development Company, L.P. Misalignment-tolerant electronic interfaces and methods for producing misalignment-tolerant electronic interfaces
US7310004B2 (en) * 2004-05-28 2007-12-18 California Institute Of Technology Apparatus and method of interconnecting nanoscale programmable logic array clusters
US20070264623A1 (en) * 2004-06-15 2007-11-15 President And Fellows Of Harvard College Nanosensors
CN101010793B (zh) * 2004-06-30 2011-09-28 Nxp股份有限公司 制造具有通过纳米线接触的导电材料层的电子器件的方法
US7495942B2 (en) 2004-08-13 2009-02-24 University Of Florida Research Foundation, Inc. Nanoscale content-addressable memory
US7365632B2 (en) * 2004-09-21 2008-04-29 Nantero, Inc. Resistive elements using carbon nanotubes
US7544977B2 (en) * 2006-01-27 2009-06-09 Hewlett-Packard Development Company, L.P. Mixed-scale electronic interface
JP2008523590A (ja) * 2004-12-06 2008-07-03 プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ ナノスケールワイヤベースのデータ格納装置
US8883568B2 (en) * 2008-06-10 2014-11-11 Brown University Research Foundation Method providing radial addressing of nanowires
US8072005B2 (en) * 2005-02-04 2011-12-06 Brown University Research Foundation Apparatus, method and computer program product providing radial addressing of nanowires
US7211503B2 (en) * 2005-02-24 2007-05-01 Hewlett-Packard Development Company, L.P. Electronic devices fabricated by use of random connections
DE102005016244A1 (de) * 2005-04-08 2006-10-19 Infineon Technologies Ag Speicherzelle, Speichereinrichtung und Verfahren zu deren Herstellung
US7786467B2 (en) * 2005-04-25 2010-08-31 Hewlett-Packard Development Company, L.P. Three-dimensional nanoscale crossbars
US20100227382A1 (en) 2005-05-25 2010-09-09 President And Fellows Of Harvard College Nanoscale sensors
WO2006132659A2 (en) 2005-06-06 2006-12-14 President And Fellows Of Harvard College Nanowire heterostructures
US7439731B2 (en) * 2005-06-24 2008-10-21 Crafts Douglas E Temporary planar electrical contact device and method using vertically-compressible nanotube contact structures
US7786465B2 (en) * 2005-12-20 2010-08-31 Invention Science Fund 1, Llc Deletable nanotube circuit
US9159417B2 (en) * 2005-12-20 2015-10-13 The Invention Science Fund I, Llc Deletable nanotube circuit
US7721242B2 (en) * 2005-12-20 2010-05-18 The Invention Science Fund 1, Llc Nanotube circuit analysis system and method
US7989797B2 (en) * 2005-12-20 2011-08-02 The Invention Science Fund I, Llc Connectible nanotube circuit
US7576565B2 (en) * 2006-04-03 2009-08-18 Blaise Laurent Mouttet Crossbar waveform driver circuit
US8183554B2 (en) * 2006-04-03 2012-05-22 Blaise Laurent Mouttet Symmetrical programmable memresistor crossbar structure
US7302513B2 (en) * 2006-04-03 2007-11-27 Blaise Laurent Mouttet Programmable crossbar signal processor
US9965251B2 (en) * 2006-04-03 2018-05-08 Blaise Laurent Mouttet Crossbar arithmetic and summation processor
US20070233761A1 (en) * 2006-04-03 2007-10-04 Mouttet Blaise L Crossbar arithmetic processor
AU2007309660A1 (en) 2006-06-12 2008-05-02 President And Fellows Of Harvard College Nanosensors and related technologies
US7763932B2 (en) * 2006-06-29 2010-07-27 International Business Machines Corporation Multi-bit high-density memory device and architecture and method of fabricating multi-bit high-density memory devices
TWI307677B (en) * 2006-07-18 2009-03-21 Applied Res Lab Method and device for fabricating nano-structure with patterned particle beam
US7393739B2 (en) * 2006-08-30 2008-07-01 International Business Machines Corporation Demultiplexers using transistors for accessing memory cell arrays
WO2008033303A2 (en) 2006-09-11 2008-03-20 President And Fellows Of Harvard College Branched nanoscale wires
EP2064744A2 (en) * 2006-09-19 2009-06-03 QuNano AB Assembly of nanoscaled field effect transistors
US8130007B2 (en) * 2006-10-16 2012-03-06 Formfactor, Inc. Probe card assembly with carbon nanotube probes having a spring mechanism therein
US7778061B2 (en) * 2006-10-16 2010-08-17 Hewlett-Packard Development Company, L.P. Crossbar-memory systems and methods for writing to and reading from crossbar memory junctions of crossbar-memory systems
JP5009993B2 (ja) 2006-11-09 2012-08-29 ナノシス・インク． ナノワイヤの配列方法および堆積方法
EP2095100B1 (en) 2006-11-22 2016-09-21 President and Fellows of Harvard College Method of operating a nanowire field effect transistor sensor
US9806273B2 (en) * 2007-01-03 2017-10-31 The United States Of America As Represented By The Secretary Of The Army Field effect transistor array using single wall carbon nano-tubes
US7608854B2 (en) * 2007-01-29 2009-10-27 Hewlett-Packard Development Company, L.P. Electronic device and method of making the same
US7763978B2 (en) * 2007-03-28 2010-07-27 Hewlett-Packard Development Company, L.P. Three-dimensional crossbar array systems and methods for writing information to and reading information stored in three-dimensional crossbar array junctions
US7872334B2 (en) * 2007-05-04 2011-01-18 International Business Machines Corporation Carbon nanotube diodes and electrostatic discharge circuits and methods
US7492624B2 (en) * 2007-06-29 2009-02-17 Stmicroelectronics S.R.L. Method and device for demultiplexing a crossbar non-volatile memory
JP2011523200A (ja) * 2008-04-15 2011-08-04 クナノ アーベー ナノワイヤラップゲートデバイス
WO2010048127A2 (en) * 2008-10-20 2010-04-29 The Regents Of The University Of Michigan A silicon based nanoscale crossbar memory
US8390323B2 (en) 2009-04-30 2013-03-05 Hewlett-Packard Development Company, L.P. Dense nanoscale logic circuitry
WO2010138506A1 (en) 2009-05-26 2010-12-02 Nanosys, Inc. Methods and systems for electric field deposition of nanowires and other devices
WO2011038228A1 (en) 2009-09-24 2011-03-31 President And Fellows Of Harvard College Bent nanowires and related probing of species
KR101161060B1 (ko) * 2009-11-30 2012-06-29 서강대학교산학협력단 나노입자를 기둥형태로 조직화시키기 위한 배열장치 및 그 배열방법
WO2011088340A2 (en) 2010-01-15 2011-07-21 Board Of Regents, The University Of Texas System A carbon nanotube crossbar based nano-architecture
US7982504B1 (en) 2010-01-29 2011-07-19 Hewlett Packard Development Company, L.P. Interconnection architecture for multilayer circuits
WO2011093863A1 (en) 2010-01-29 2011-08-04 Hewlett-Packard Development Company, L.P. Three dimensional multilayer circuit
US9368599B2 (en) 2010-06-22 2016-06-14 International Business Machines Corporation Graphene/nanostructure FET with self-aligned contact and gate
US8872176B2 (en) 2010-10-06 2014-10-28 Formfactor, Inc. Elastic encapsulated carbon nanotube based electrical contacts
US9273004B2 (en) 2011-09-29 2016-03-01 International Business Machines Corporation Selective placement of carbon nanotubes via coulombic attraction of oppositely charged carbon nanotubes and self-assembled monolayers
US9442695B2 (en) 2014-05-02 2016-09-13 International Business Machines Corporation Random bit generator based on nanomaterials
US9720772B2 (en) * 2015-03-04 2017-08-01 Kabushiki Kaisha Toshiba Memory system, method for controlling magnetic memory, and device for controlling magnetic memory
CN107564946A (zh) * 2016-07-01 2018-01-09 清华大学 纳米晶体管
CN107564910B (zh) * 2016-07-01 2020-08-11 清华大学 半导体器件
CN107564947A (zh) * 2016-07-01 2018-01-09 清华大学 纳米异质结构
CN107564917B (zh) * 2016-07-01 2020-06-09 清华大学 纳米异质结构
WO2020014478A1 (en) * 2018-07-11 2020-01-16 The Regents Of The University Of California Nucleic acid-based electrically readable, read-only memory

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60028343T2 (de) 1999-02-12 2007-05-24 Board Of Trustees Operating Michigan State University, East Lansing Nanokapseln mit geladenen teilchen, deren verwendung und verfahren zu ihrer herstellung
US6128214A (en) 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6314019B1 (en) * 1999-03-29 2001-11-06 Hewlett-Packard Company Molecular-wire crossbar interconnect (MWCI) for signal routing and communications
US6256767B1 (en) * 1999-03-29 2001-07-03 Hewlett-Packard Company Demultiplexer for a molecular wire crossbar network (MWCN DEMUX)
US6383784B1 (en) 1999-12-03 2002-05-07 City Of Hope Construction of nucleoprotein based assemblies comprising addressable components for nanoscale assembly and nanoprocessors
JP4112358B2 (ja) * 2000-07-04 2008-07-02 インフィネオン テクノロジーズ アクチエンゲゼルシャフト 電界効果トランジスタ
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
US20040248381A1 (en) 2000-11-01 2004-12-09 Myrick James J. Nanoelectronic interconnection and addressing
KR101008294B1 (ko) * 2001-03-30 2011-01-13 더 리전트 오브 더 유니버시티 오브 캘리포니아 나노구조체 및 나노와이어의 제조 방법 및 그로부터 제조되는 디바이스
US6777982B2 (en) * 2001-04-03 2004-08-17 Carnegie Mellon University Molecular scale latch and associated clocking scheme to provide gain, memory and I/O isolation
US6385075B1 (en) * 2001-06-05 2002-05-07 Hewlett-Packard Company Parallel access of cross-point diode memory arrays
US6706402B2 (en) * 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
EP1468423A2 (en) * 2002-01-18 2004-10-20 California Institute Of Technology Array-based architecture for molecular electronics
US6760245B2 (en) * 2002-05-01 2004-07-06 Hewlett-Packard Development Company, L.P. Molecular wire crossbar flash memory
WO2004034467A2 (en) 2002-07-25 2004-04-22 California Institute Of Technology Sublithographic nanoscale memory architecture
US6682951B1 (en) * 2002-09-26 2004-01-27 International Business Machines Corporation Arrangements of microscopic particles for performing logic computations, and method of use

Similar Documents

Publication Publication Date Title
JP2006512782A5 (enExample)
US8311965B2 (en) Area efficient neuromorphic circuits using field effect transistors (FET) and variable resistance material
KR101409310B1 (ko) 3차원 크로스바 어레이 접합에 저장된 정보를 판독 및 기록하기 위한 3차원 크로스바 어레이 시스템 및 방법
JP2005539404A5 (enExample)
US7922919B2 (en) Crossbar-array designs and wire addressing methods that tolerate misalignment of electrical components at wire overlap points
US8183554B2 (en) Symmetrical programmable memresistor crossbar structure
KR960009059A (ko) 집적회로의 페어를 이루는 라인 도전체들의 단일 트위스트 레이아웃 및 방법
JP2003273322A5 (enExample)
US9846757B2 (en) Cell grid architecture for FinFET technology
EP1875476B1 (en) Three-dimensional nanoscale crossbars
JP2010123963A (ja) 半導体装置及び該半導体装置のレイアウト方法
KR101646017B1 (ko) 크로스바 어레이 구조의 메모리 장치 및 이의 제조 방법
KR101746257B1 (ko) 동적 광학 크로스바 어레이
WO2004109706A2 (en) Nanoscale wire-based sublithographic programmable logic arrays
JP2002064043A5 (enExample)
WO2016061598A1 (de) Leiterplatte mit einer mehrzahl von an der leiterplatte in zumindest einer gruppe angeordneter elektronischer bauteile
US8351234B2 (en) Extensible three dimensional circuit having parallel array channels
US7292498B2 (en) Factored nanoscale multiplexer/demultiplexer circuit for interfacing nanowires with microscale and sub-microscale electronic devices
CN115472607B (zh) 一种射频开关结构和射频开关模组
CN115758969A (zh) 一种利用内置长线模块实现长距离布线的fpga
WO2004109703A1 (en) Deterministic addressing of nanoscale devices assembled at sublithographic pitches
US7307345B2 (en) Crossbar-array designs and wire addressing methods that tolerate misalignment of electrical components at wire overlap points
KR20200014274A (ko) 반도체 장치
JPH0799249A (ja) 信号供給回路
US7228518B2 (en) Method for reducing the size and nanowire length used in nanowire crossbars without reducing the number of nanowire junctions