JP2002064043A5 - - Google Patents

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Publication number
JP2002064043A5
JP2002064043A5 JP2000247702A JP2000247702A JP2002064043A5 JP 2002064043 A5 JP2002064043 A5 JP 2002064043A5 JP 2000247702 A JP2000247702 A JP 2000247702A JP 2000247702 A JP2000247702 A JP 2000247702A JP 2002064043 A5 JP2002064043 A5 JP 2002064043A5
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JP
Japan
Prior art keywords
line
region
pattern
space
semiconductor device
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Application number
JP2000247702A
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English (en)
Japanese (ja)
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JP3964608B2 (ja
JP2002064043A (ja
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Publication date
Priority claimed from JP2000247702A external-priority patent/JP3964608B2/ja
Priority to JP2000247702A priority Critical patent/JP3964608B2/ja
Application filed filed Critical
Priority to US09/920,859 priority patent/US6531357B2/en
Priority to KR10-2001-0049228A priority patent/KR100434835B1/ko
Priority to CNB011255900A priority patent/CN1203547C/zh
Publication of JP2002064043A publication Critical patent/JP2002064043A/ja
Priority to US10/216,732 priority patent/US6596578B2/en
Publication of JP2002064043A5 publication Critical patent/JP2002064043A5/ja
Publication of JP3964608B2 publication Critical patent/JP3964608B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000247702A 2000-08-17 2000-08-17 半導体装置 Expired - Fee Related JP3964608B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000247702A JP3964608B2 (ja) 2000-08-17 2000-08-17 半導体装置
US09/920,859 US6531357B2 (en) 2000-08-17 2001-08-03 Method of manufacturing a semiconductor device
KR10-2001-0049228A KR100434835B1 (ko) 2000-08-17 2001-08-16 반도체 장치 및 그 제조 방법
CNB011255900A CN1203547C (zh) 2000-08-17 2001-08-16 半导体器件及其制造方法
US10/216,732 US6596578B2 (en) 2000-08-17 2002-08-13 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000247702A JP3964608B2 (ja) 2000-08-17 2000-08-17 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007112330A Division JP4791999B2 (ja) 2007-04-20 2007-04-20 半導体装置

Publications (3)

Publication Number Publication Date
JP2002064043A JP2002064043A (ja) 2002-02-28
JP2002064043A5 true JP2002064043A5 (enExample) 2005-07-21
JP3964608B2 JP3964608B2 (ja) 2007-08-22

Family

ID=18737739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000247702A Expired - Fee Related JP3964608B2 (ja) 2000-08-17 2000-08-17 半導体装置

Country Status (1)

Country Link
JP (1) JP3964608B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100454131B1 (ko) * 2002-06-05 2004-10-26 삼성전자주식회사 라인형 패턴을 갖는 반도체 소자 및 그 레이아웃 방법
KR100519795B1 (ko) 2003-02-07 2005-10-10 삼성전자주식회사 다층배선 형성을 위한 포토마스크 세트 및 이를 사용하여제조된 반도체장치
JP5106747B2 (ja) 2004-10-27 2012-12-26 ルネサスエレクトロニクス株式会社 パターン形成方法、半導体装置の製造方法及び露光用マスクセット
KR100718216B1 (ko) 2004-12-13 2007-05-15 가부시끼가이샤 도시바 반도체 장치, 패턴 레이아웃 작성 방법, 노광 마스크
JP2006173186A (ja) * 2004-12-13 2006-06-29 Toshiba Corp 半導体装置、パターンレイアウト作成方法および露光マスク
JP4801986B2 (ja) 2005-02-03 2011-10-26 株式会社東芝 半導体記憶装置
JP2007129018A (ja) * 2005-11-02 2007-05-24 Nec Electronics Corp 半導体装置
KR100817089B1 (ko) 2007-02-28 2008-03-26 삼성전자주식회사 이중 패터닝 기술을 이용한 반도체 소자의 미세 패턴 형성방법
KR100886353B1 (ko) 2007-04-02 2009-03-03 삼성전자주식회사 이중 패터닝 기술을 사용한 반도체 메모리 장치 및 그레이아웃 방법
JP2009271261A (ja) * 2008-05-02 2009-11-19 Powerchip Semiconductor Corp 回路構造とそれを定義するためのフォトマスク
US8247904B2 (en) * 2009-08-13 2012-08-21 International Business Machines Corporation Interconnection between sublithographic-pitched structures and lithographic-pitched structures
CN106463352B (zh) * 2014-06-13 2020-06-19 英特尔公司 借助于电子束的层上单向金属
US10497566B1 (en) * 2018-06-19 2019-12-03 Macronix International Co., Ltd. Layout design for fanout patterns in self-aligned double patterning process
US11335569B2 (en) 2020-06-17 2022-05-17 Winbond Electronics Corp. Conductive wire structure and manufacturing method thereof
CN113808999B (zh) * 2020-06-17 2024-02-27 华邦电子股份有限公司 导线结构及其制造方法

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