JP2006511699A5 - - Google Patents

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Publication number
JP2006511699A5
JP2006511699A5 JP2004523307A JP2004523307A JP2006511699A5 JP 2006511699 A5 JP2006511699 A5 JP 2006511699A5 JP 2004523307 A JP2004523307 A JP 2004523307A JP 2004523307 A JP2004523307 A JP 2004523307A JP 2006511699 A5 JP2006511699 A5 JP 2006511699A5
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JP
Japan
Prior art keywords
metal layer
electropolishing
wafer
thickness measurement
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004523307A
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English (en)
Japanese (ja)
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JP2006511699A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/US2003/022928 external-priority patent/WO2004010477A2/en
Publication of JP2006511699A publication Critical patent/JP2006511699A/ja
Publication of JP2006511699A5 publication Critical patent/JP2006511699A5/ja
Pending legal-status Critical Current

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JP2004523307A 2002-07-22 2003-07-22 厚さの計測値を使用した適応型の電解研磨と障壁及び犠牲層の除去 Pending JP2006511699A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US39794102P 2002-07-22 2002-07-22
US40399602P 2002-08-17 2002-08-17
PCT/US2003/022928 WO2004010477A2 (en) 2002-07-22 2003-07-22 Adaptive electropolishing using thickness measurements and removal of barrier and sacrificial layers

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006254225A Division JP2007073974A (ja) 2002-07-22 2006-09-20 厚さの計測値を使用した適応型の電解研磨と障壁及び犠牲層の除去

Publications (2)

Publication Number Publication Date
JP2006511699A JP2006511699A (ja) 2006-04-06
JP2006511699A5 true JP2006511699A5 (https=) 2006-09-14

Family

ID=30773050

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2004523307A Pending JP2006511699A (ja) 2002-07-22 2003-07-22 厚さの計測値を使用した適応型の電解研磨と障壁及び犠牲層の除去
JP2006254225A Pending JP2007073974A (ja) 2002-07-22 2006-09-20 厚さの計測値を使用した適応型の電解研磨と障壁及び犠牲層の除去

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2006254225A Pending JP2007073974A (ja) 2002-07-22 2006-09-20 厚さの計測値を使用した適応型の電解研磨と障壁及び犠牲層の除去

Country Status (9)

Country Link
US (1) US20050245086A1 (https=)
EP (1) EP1573783A2 (https=)
JP (2) JP2006511699A (https=)
KR (1) KR101151456B1 (https=)
CN (1) CN101427351B (https=)
AU (1) AU2003256673A1 (https=)
CA (1) CA2491951A1 (https=)
TW (2) TW200949918A (https=)
WO (1) WO2004010477A2 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200845162A (en) * 2006-05-02 2008-11-16 Acm Res Inc Removing barrier layer using an eletro-polishing process
US7667835B2 (en) * 2006-08-28 2010-02-23 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for preventing copper peeling in ECP
US20090133908A1 (en) * 2007-11-28 2009-05-28 Goodner Michael D Interconnect structure for a microelectronic device, method of manfacturing same, and microelectronic structure containing same
WO2010020092A1 (en) * 2008-08-20 2010-02-25 Acm Research (Shanghai) Inc. Barrier layer removal method and apparatus
CN102601471B (zh) * 2012-03-28 2013-07-24 华南理工大学 一种空间曲线啮合齿轮机构的精加工方法
WO2013173998A1 (en) * 2012-05-24 2013-11-28 Acm Research (Shanghai) Inc. Method and apparatus for pulse electrochemical polishing
JP6186780B2 (ja) 2013-03-18 2017-08-30 富士通株式会社 半導体装置およびその製造方法
CN104952787B (zh) * 2014-03-26 2020-03-27 盛美半导体设备(上海)股份有限公司 径向厚度自动修整方法
CN106463455B (zh) * 2014-07-08 2019-02-15 盛美半导体设备（上海）有限公司 一种形成金属互连结构的方法
JP2017536692A (ja) 2014-10-31 2017-12-07 ビーコ プリジション サーフェイス プロセシング エルエルシー ウェット・エッチング・プロセスを実行するための装置および方法
CN105300324B (zh) * 2015-09-16 2018-06-01 浙江工业大学 一种脆性材料表面在抛光前的评价方法
TWI738757B (zh) 2016-04-05 2021-09-11 美商維克儀器公司 經由化學的適應性峰化來控制蝕刻速率的裝置和方法
US10541180B2 (en) 2017-03-03 2020-01-21 Veeco Precision Surface Processing Llc Apparatus and method for wafer thinning in advanced packaging applications
KR102301933B1 (ko) * 2018-12-26 2021-09-15 한양대학교 에리카산학협력단 반도체 소자의 제조 방법
CN113604864A (zh) * 2021-06-29 2021-11-05 晋西工业集团有限责任公司 一种深度可控的电解剥层方法
EP4299800A1 (de) * 2022-07-01 2024-01-03 Technische Universität Bergakademie Freiberg Vorrichtung und verfahren zur plasmaelektrolytischen bearbeitung der elektrisch leitfähigen oberfläche eines werkstücks durch elektrolytstrahlen
CN120109089B (zh) * 2025-05-12 2025-07-22 合肥晶合集成电路股份有限公司 导电插塞的制备方法、半导体器件的制备方法及半导体器件

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6447668B1 (en) * 1998-07-09 2002-09-10 Acm Research, Inc. Methods and apparatus for end-point detection
US6395152B1 (en) * 1998-07-09 2002-05-28 Acm Research, Inc. Methods and apparatus for electropolishing metal interconnections on semiconductor devices
JP2002531702A (ja) * 1998-11-28 2002-09-24 エーシーエム リサーチ，インコーポレイティド 半導体ワークの電気めっきおよび／または電解研磨中に半導体ワークを保持して位置決めする方法および装置
US6234870B1 (en) * 1999-08-24 2001-05-22 International Business Machines Corporation Serial intelligent electro-chemical-mechanical wafer processor
US6284622B1 (en) * 1999-10-25 2001-09-04 Advanced Micro Devices, Inc. Method for filling trenches
JP2002093761A (ja) * 2000-09-19 2002-03-29 Sony Corp 研磨方法、研磨装置、メッキ方法およびメッキ装置
EP1446514A4 (en) * 2001-11-13 2007-11-28 Acm Res Inc ELECTROPOLIER ASSEMBLY AND METHOD FOR ELECTROPOLISHING CONDUCTIVE LAYERS
US6935922B2 (en) * 2002-02-04 2005-08-30 Kla-Tencor Technologies Corp. Methods and systems for generating a two-dimensional map of a characteristic at relative or absolute locations of measurement spots on a specimen during polishing
US6861354B2 (en) * 2002-02-04 2005-03-01 Asm Nutool Inc Method and structure to reduce defects in integrated circuits and substrates

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