JP2006510807A - 銅配線および／またはフィルムを研磨および／または洗浄する方法およびそのための組成物 - Google Patents

銅配線および／またはフィルムを研磨および／または洗浄する方法およびそのための組成物 Download PDF

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Publication number
JP2006510807A
JP2006510807A JP2004564819A JP2004564819A JP2006510807A JP 2006510807 A JP2006510807 A JP 2006510807A JP 2004564819 A JP2004564819 A JP 2004564819A JP 2004564819 A JP2004564819 A JP 2004564819A JP 2006510807 A JP2006510807 A JP 2006510807A
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JP
Japan
Prior art keywords
composition
group
copper
sulfonic acid
carbon atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004564819A
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English (en)
Japanese (ja)
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JP2006510807A5 (https=
Inventor
エー． ザッゼラ，ローレンス
ジェイ． ペアレント，マイケル
エム． ラマンナ，ウィリアム
ケサリ，サスラット
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3M Innovative Properties Co
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3M Innovative Properties Co
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Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of JP2006510807A publication Critical patent/JP2006510807A/ja
Publication of JP2006510807A5 publication Critical patent/JP2006510807A5/ja
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/004—Surface-active compounds containing F
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/349—Organic compounds containing sulfur additionally containing nitrogen atoms, e.g. nitro, nitroso, amino, imino, nitrilo, nitrile groups containing compounds or their derivatives or thio urea
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/10—Other heavy metals
    • C23G1/103—Other heavy metals copper or alloys of copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/20—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP]
    • H10P52/203—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • ing And Chemical Polishing (AREA)
JP2004564819A 2002-12-16 2003-10-24 銅配線および／またはフィルムを研磨および／または洗浄する方法およびそのための組成物 Pending JP2006510807A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/320,254 US6858124B2 (en) 2002-12-16 2002-12-16 Methods for polishing and/or cleaning copper interconnects and/or film and compositions therefor
PCT/US2003/033878 WO2004061027A1 (en) 2002-12-16 2003-10-24 Methods for polishing and/or cleaning copper interconnects and/or film and compositions therefor

Publications (2)

Publication Number Publication Date
JP2006510807A true JP2006510807A (ja) 2006-03-30
JP2006510807A5 JP2006510807A5 (https=) 2006-12-07

Family

ID=32506832

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004564819A Pending JP2006510807A (ja) 2002-12-16 2003-10-24 銅配線および／またはフィルムを研磨および／または洗浄する方法およびそのための組成物

Country Status (7)

Country Link
US (1) US6858124B2 (https=)
EP (1) EP1572820A1 (https=)
JP (1) JP2006510807A (https=)
KR (1) KR20050085663A (https=)
CN (1) CN100341122C (https=)
AU (1) AU2003284355A1 (https=)
WO (1) WO2004061027A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010116390A (ja) * 2008-10-15 2010-05-27 Mitsubishi Materials Corp エーテル構造を有するペルフルオロスルホン酸及びその誘導体の製造方法、並びに含フッ素エーテルスルホン酸化合物及びその誘導体を含む界面活性剤
WO2011040497A1 (ja) * 2009-09-29 2011-04-07 三菱マテリアル株式会社 エーテル構造を有するペルフルオロスルホン酸及びその誘導体の製造方法、並びに含フッ素エーテルスルホン酸化合物及びその誘導体を含む界面活性剤
JP2014148504A (ja) * 2013-01-11 2014-08-21 Mitsubishi Materials Corp フッ素系界面活性剤及びその製造方法
JP2015199840A (ja) * 2014-04-08 2015-11-12 山口精研工業株式会社 研磨用組成物
JP2017017360A (ja) * 2011-03-11 2017-01-19 フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッドＦｕｊｉＦｉｌｍ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＵＳＡ， Ｉｎｃ． 新規なエッチング組成物

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US7129160B2 (en) 2002-08-29 2006-10-31 Micron Technology, Inc. Method for simultaneously removing multiple conductive materials from microelectronic substrates
US7220166B2 (en) * 2000-08-30 2007-05-22 Micron Technology, Inc. Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate
US7078308B2 (en) * 2002-08-29 2006-07-18 Micron Technology, Inc. Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate
US7153195B2 (en) 2000-08-30 2006-12-26 Micron Technology, Inc. Methods and apparatus for selectively removing conductive material from a microelectronic substrate
US7134934B2 (en) * 2000-08-30 2006-11-14 Micron Technology, Inc. Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium
US7112121B2 (en) * 2000-08-30 2006-09-26 Micron Technology, Inc. Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate
US7192335B2 (en) * 2002-08-29 2007-03-20 Micron Technology, Inc. Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates
US7112122B2 (en) * 2003-09-17 2006-09-26 Micron Technology, Inc. Methods and apparatus for removing conductive material from a microelectronic substrate
US7153777B2 (en) 2004-02-20 2006-12-26 Micron Technology, Inc. Methods and apparatuses for electrochemical-mechanical polishing
US7294610B2 (en) * 2004-03-03 2007-11-13 3M Innovative Properties Company Fluorinated sulfonamide surfactants for aqueous cleaning solutions
US7566391B2 (en) 2004-09-01 2009-07-28 Micron Technology, Inc. Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media
US7374621B2 (en) * 2006-02-09 2008-05-20 Hitachi Global Storage Technologies Netherlands Bv System and method for cleaning chemistry and processing during thin film magnetic head wafer fabrication
US8288330B2 (en) * 2006-05-26 2012-10-16 Air Products And Chemicals, Inc. Composition and method for photoresist removal
US7977426B2 (en) * 2008-11-13 2011-07-12 E. I. Du Pont De Nemours And Company Fluoroalkyl ether sulfonate surfactants
CN105802747B (zh) * 2016-04-15 2018-11-09 林淑录 一种太阳能光伏电池硅片制绒后清洗用的清洗剂
US11193059B2 (en) 2016-12-13 2021-12-07 Current Lighting Solutions, Llc Processes for preparing color stable red-emitting phosphor particles having small particle size
US12509597B2 (en) * 2018-04-27 2025-12-30 W.M. Barr & Company, Inc. Paint remover having reduced flammability

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JPH06199504A (ja) * 1993-01-06 1994-07-19 Mitsubishi Kasei Corp 低表面張力硫酸組成物
JP2001242641A (ja) * 2000-02-29 2001-09-07 Kanto Chem Co Inc フォトレジスト剥離液組成物およびそれを用いた半導体基板処理方法
WO2001086031A1 (en) * 2000-05-11 2001-11-15 Nu Tool Inc. Anode assembly for plating and planarizing a conductive layer
JP2002235187A (ja) * 2000-10-13 2002-08-23 Shipley Co Llc シ−ド修復及び電解めっき浴
JP2002294483A (ja) * 2000-10-20 2002-10-09 Shipley Co Llc シード層修復浴
JP2002302789A (ja) * 2000-10-13 2002-10-18 Shipley Co Llc 電解質
WO2003038883A1 (en) * 2001-10-31 2003-05-08 Hitachi Chemical Co., Ltd. Polishing fluid and polishing method

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US5340370A (en) 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
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US6372700B1 (en) 2000-03-31 2002-04-16 3M Innovative Properties Company Fluorinated solvent compositions containing ozone
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US6291082B1 (en) 2000-06-13 2001-09-18 Advanced Micro Devices, Inc. Method of electroless ag layer formation for cu interconnects
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Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06199504A (ja) * 1993-01-06 1994-07-19 Mitsubishi Kasei Corp 低表面張力硫酸組成物
JP2001242641A (ja) * 2000-02-29 2001-09-07 Kanto Chem Co Inc フォトレジスト剥離液組成物およびそれを用いた半導体基板処理方法
WO2001086031A1 (en) * 2000-05-11 2001-11-15 Nu Tool Inc. Anode assembly for plating and planarizing a conductive layer
JP2002235187A (ja) * 2000-10-13 2002-08-23 Shipley Co Llc シ−ド修復及び電解めっき浴
JP2002302789A (ja) * 2000-10-13 2002-10-18 Shipley Co Llc 電解質
JP2002294483A (ja) * 2000-10-20 2002-10-09 Shipley Co Llc シード層修復浴
WO2003038883A1 (en) * 2001-10-31 2003-05-08 Hitachi Chemical Co., Ltd. Polishing fluid and polishing method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010116390A (ja) * 2008-10-15 2010-05-27 Mitsubishi Materials Corp エーテル構造を有するペルフルオロスルホン酸及びその誘導体の製造方法、並びに含フッ素エーテルスルホン酸化合物及びその誘導体を含む界面活性剤
WO2011040497A1 (ja) * 2009-09-29 2011-04-07 三菱マテリアル株式会社 エーテル構造を有するペルフルオロスルホン酸及びその誘導体の製造方法、並びに含フッ素エーテルスルホン酸化合物及びその誘導体を含む界面活性剤
JP2017017360A (ja) * 2011-03-11 2017-01-19 フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッドＦｕｊｉＦｉｌｍ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＵＳＡ， Ｉｎｃ． 新規なエッチング組成物
JP2014148504A (ja) * 2013-01-11 2014-08-21 Mitsubishi Materials Corp フッ素系界面活性剤及びその製造方法
JP2015199840A (ja) * 2014-04-08 2015-11-12 山口精研工業株式会社 研磨用組成物

Also Published As

Publication number Publication date
EP1572820A1 (en) 2005-09-14
US20040112759A1 (en) 2004-06-17
KR20050085663A (ko) 2005-08-29
WO2004061027A1 (en) 2004-07-22
CN100341122C (zh) 2007-10-03
US6858124B2 (en) 2005-02-22
AU2003284355A1 (en) 2004-07-29
CN1726266A (zh) 2006-01-25

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