JP2006510046A5 - - Google Patents

Download PDF

Info

Publication number
JP2006510046A5
JP2006510046A5 JP2004559365A JP2004559365A JP2006510046A5 JP 2006510046 A5 JP2006510046 A5 JP 2006510046A5 JP 2004559365 A JP2004559365 A JP 2004559365A JP 2004559365 A JP2004559365 A JP 2004559365A JP 2006510046 A5 JP2006510046 A5 JP 2006510046A5
Authority
JP
Japan
Prior art keywords
film
composition
depositing
substrate
field emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004559365A
Other languages
English (en)
Other versions
JP2006510046A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2003/038810 external-priority patent/WO2004053593A2/en
Publication of JP2006510046A publication Critical patent/JP2006510046A/ja
Publication of JP2006510046A5 publication Critical patent/JP2006510046A5/ja
Pending legal-status Critical Current

Links

Claims (5)

  1. (a)少なくとも1種のポジ画像形成性フォトポリマー系と、(b)約1〜約70体積%の粒子とを含んでなるポジ画像形成性粒子充填フォトレジスト組成物。
  2. 請求項1に記載の組成物を含んでなる電界放出フィルム。
  3. 請求項20に記載のフィルムを含んでなる電界放出トライオード、電界放出ディスプレイ、照明装置または真空電子装置。
  4. (a)請求項1に記載の組成物を基板上にフィルムとして堆積させ;
    (b)フィルムを放射線に画像どおりに露光してその露光部分および未露光部分を形成せしめ;そして
    (c)露光部分を除去して現像画像を形成せしめる
    ことを含んでなる基板上に画像を形成する方法。
  5. (a)請求項1に記載の第1の組成物を基板上に第1のフィルムとして堆積させ;
    (b)請求項1に記載の第2の組成物を第1のフィルム上に第2のフィルムとして堆積させ;
    (c)第1および第2のフィルムを放射線に画像どおりに露光して露光部分および未露光部分を形成せしめ;
    (d)露光部分を除去して現像画像を形成せしめる
    ことを含んでなる多層パターン化構造体を形成する方法。
JP2004559365A 2002-12-06 2003-12-05 ポジ画像形成性厚膜組成物 Pending JP2006510046A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43139202P 2002-12-06 2002-12-06
PCT/US2003/038810 WO2004053593A2 (en) 2002-12-06 2003-12-05 Positive imageable thick film compositions

Publications (2)

Publication Number Publication Date
JP2006510046A JP2006510046A (ja) 2006-03-23
JP2006510046A5 true JP2006510046A5 (ja) 2007-02-01

Family

ID=32507722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004559365A Pending JP2006510046A (ja) 2002-12-06 2003-12-05 ポジ画像形成性厚膜組成物

Country Status (7)

Country Link
US (2) US20040170925A1 (ja)
EP (1) EP1567917A2 (ja)
JP (1) JP2006510046A (ja)
KR (1) KR20050084150A (ja)
CN (1) CN1742233A (ja)
AU (1) AU2003293441A1 (ja)
WO (1) WO2004053593A2 (ja)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004047166A2 (en) * 2002-11-15 2004-06-03 E.I. Du Pont De Nemours And Company Process for using protective layers in the fabrication of electronic devices
GB0227902D0 (en) * 2002-11-29 2003-01-08 Ingenia Holdings Ltd Template
US8298754B2 (en) * 2003-11-25 2012-10-30 Murata Manufacturing Co., Ltd. Method for forming thick film pattern, method for manufacturing electronic component, and photolithography photosensitive paste
US7402373B2 (en) * 2004-02-05 2008-07-22 E.I. Du Pont De Nemours And Company UV radiation blocking protective layers compatible with thick film pastes
KR101042667B1 (ko) * 2004-07-05 2011-06-20 주식회사 동진쎄미켐 포토레지스트 조성물
KR20060090520A (ko) * 2005-02-07 2006-08-11 삼성전자주식회사 감광성 수지 및 상기 감광성 수지로 이루어진 패턴을포함하는 박막 표시판 및 그 제조 방법
US7524606B2 (en) 2005-04-11 2009-04-28 Az Electronic Materials Usa Corp. Nanocomposite photoresist composition for imaging thick films
US7247419B2 (en) 2005-04-11 2007-07-24 Az Electronic Materials Usa Corp. Nanocomposite photosensitive composition and use thereof
JP4861767B2 (ja) 2005-07-26 2012-01-25 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
KR101166016B1 (ko) * 2006-04-26 2012-07-19 삼성에스디아이 주식회사 전자 방출원 형성용 조성물, 이로부터 제조된 전자 방출원및 상기 전자 방출원을 구비한 전자 방출 소자
JP4751773B2 (ja) * 2006-06-09 2011-08-17 太陽ホールディングス株式会社 光硬化性組成物及びそれを用いて形成した焼成物パターン
KR101423801B1 (ko) * 2006-11-28 2014-07-25 도쿄 오카 고교 가부시키가이샤 후막용 화학증폭형 포지티브형 포토레지스트 조성물, 후막용 화학증폭형 드라이 필름 및 후막 레지스트 패턴의 제조 방법
KR101034346B1 (ko) * 2006-12-22 2011-05-16 주식회사 엘지화학 탄소 나노 튜브를 통한 내열성 개선의 감광성 수지 조성물
US8310069B2 (en) * 2007-10-05 2012-11-13 Texas Instruements Incorporated Semiconductor package having marking layer
KR20100097146A (ko) * 2007-11-15 2010-09-02 이 아이 듀폰 디 네모아 앤드 캄파니 탄소 나노튜브의 보호
US20110012035A1 (en) * 2009-07-15 2011-01-20 Texas Instruments Incorporated Method for Precision Symbolization Using Digital Micromirror Device Technology
US20130189524A1 (en) * 2012-01-19 2013-07-25 Brewer Science Inc. Viscous fugitive polymer-based carbon nanotube coatings
TWI585522B (zh) * 2012-08-31 2017-06-01 富士軟片股份有限公司 感光性樹脂組成物、硬化物及其製造方法、樹脂圖案的製造方法、硬化膜、液晶顯示裝置、有機el顯示裝置、以及觸控面板顯示裝置
TW201421154A (zh) * 2012-10-26 2014-06-01 Fujifilm Corp 感光性樹脂組成物、硬化物及其製造方法、樹脂圖案製造方法、硬化膜、有機el顯示裝置、液晶顯示裝置以及觸控面板顯示裝置
WO2014150577A1 (en) 2013-03-15 2014-09-25 Sinovia Technologies Photoactive transparent conductive films, method of making them and touch sensitive device comprising said films
JP6564196B2 (ja) * 2014-03-20 2019-08-21 東京応化工業株式会社 厚膜用化学増幅型ポジ型感光性樹脂組成物
WO2018213432A1 (en) * 2017-05-17 2018-11-22 Formlabs, Inc. Techniques for casting from additively fabricated molds and related systems and methods

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5915394B2 (ja) * 1978-08-31 1984-04-09 富士通株式会社 厚膜微細パタ−ン生成方法
DD234196A3 (de) * 1983-02-09 1986-03-26 Ptnjj Npo Elektronpribor Fotoempfindliche dielektrische mischung
JPS6232453A (ja) * 1985-08-06 1987-02-12 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト用現像液
US4939070A (en) * 1986-07-28 1990-07-03 Brunsvold William R Thermally stable photoresists with high sensitivity
US5256836A (en) * 1989-06-09 1993-10-26 Toshiba Lighting & Technology Corporation Thick film hybrid circuit board device and method of manufacturing the same
US4985332A (en) * 1990-04-10 1991-01-15 E. I. Du Pont De Nemours And Company Resist material with carbazole diazonium salt acid generator and process for use
JP2670711B2 (ja) * 1990-05-29 1997-10-29 富士写真フイルム株式会社 ネガ型感光性樹脂組成物用現像液
DE69130701T2 (de) * 1990-10-29 1999-08-26 Toyo Gosei Kogyo Kk Lichtempfindliches gefärbtes Harz, farbiges Bild, Verfahren zur Herstellung von Farbfiltern und Verfahren zur Herstellung einer Schwarzmatrix
US5164286A (en) * 1991-02-01 1992-11-17 Ocg Microelectronic Materials, Inc. Photoresist developer containing fluorinated amphoteric surfactant
US6074893A (en) * 1993-09-27 2000-06-13 Sumitomo Metal Industries, Ltd. Process for forming fine thick-film conductor patterns
NL9301908A (nl) * 1993-11-04 1995-06-01 Spiro Research Bv Werkwijze en inrichting voor het ontluchten van een vloeistof in een in hoofdzaak gesloten vloeistofcirculatiesysteem.
US6060207A (en) * 1994-07-11 2000-05-09 Kabushiki Kaisha Toshiba Photosensitive material
US5506090A (en) * 1994-09-23 1996-04-09 Minnesota Mining And Manufacturing Company Process for making shoot and run printing plates
JPH08148787A (ja) * 1994-11-21 1996-06-07 Sumitomo Kinzoku Ceramics:Kk 厚膜ペースト
DE69614502D1 (de) * 1995-09-29 2001-09-20 Nippon Kayaku Kk Aktinische strahlungshärtbare und wärmestrahlungsabweisende harzzusammensetzung und damit beschichteter film
US5879856A (en) * 1995-12-05 1999-03-09 Shipley Company, L.L.C. Chemically amplified positive photoresists
US5942367A (en) * 1996-04-24 1999-08-24 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group
JP3297324B2 (ja) * 1996-10-30 2002-07-02 富士通株式会社 レジスト組成物、レジストパターンの形成方法及び半導体装置の製造方法
US6323361B1 (en) * 1997-04-17 2001-11-27 Corning Inc. Photocurable halofluorinated acrylates
JPH10340666A (ja) * 1997-06-09 1998-12-22 Futaba Corp 電界電子放出素子
US6291129B1 (en) * 1997-08-29 2001-09-18 Kabushiki Kaisha Toshiba Monomer, high molecular compound and photosensitive composition
US6399279B1 (en) * 1998-01-16 2002-06-04 Mitsubishi Chemical Corporation Method for forming a positive image
KR100594768B1 (ko) * 1998-03-12 2006-07-03 후지 샤신 필름 가부시기가이샤 포지티브 감광성 조성물
KR100571313B1 (ko) * 1998-03-17 2006-04-17 후지 샤신 필름 가부시기가이샤 포지티브 감광성 조성물
US6558871B1 (en) * 1998-03-20 2003-05-06 Nippon Soda Co. Ltd. Photocurable composition containing iodonium salt compound
US6294270B1 (en) * 1998-12-23 2001-09-25 3M Innovative Properties Company Electronic circuit device comprising an epoxy-modified aromatic vinyl-conjugated diene block copolymer
US6455234B1 (en) * 1999-05-04 2002-09-24 Air Products And Chemicals, Inc. Acetylenic diol ethylene oxide/propylene oxide adducts and their use in photoresist developers
KR20010051350A (ko) * 1999-11-01 2001-06-25 이시마루 기미오, 다께우찌 마사아끼 활성 입자, 감광성 수지 조성물 및 패턴 형성 방법
US7449081B2 (en) * 2000-06-21 2008-11-11 E. I. Du Pont De Nemours And Company Process for improving the emission of electron field emitters
US6534235B1 (en) * 2000-10-31 2003-03-18 Kansai Research Institute, Inc. Photosensitive resin composition and process for forming pattern
TW583503B (en) * 2000-12-01 2004-04-11 Kansai Paint Co Ltd Method of forming conductive pattern
JP3914386B2 (ja) * 2000-12-28 2007-05-16 株式会社ルネサステクノロジ フォトマスク、その製造方法、パターン形成方法および半導体装置の製造方法
JP4317330B2 (ja) * 2001-02-07 2009-08-19 富士フイルム株式会社 感光性平版印刷版の製版方法
US6656667B2 (en) * 2001-03-14 2003-12-02 United Microelectronics Corp. Multiple resist layer photolithographic process
US6613499B2 (en) * 2001-06-12 2003-09-02 Macronix International Co., Ltd. Development method for manufacturing semiconductors
US7008754B2 (en) * 2001-09-11 2006-03-07 Daiken Chemical Co., Ltd. Method for forming image on object surface including circuit substrate
US20030070559A1 (en) * 2001-10-15 2003-04-17 Victor Robert J. Vegetable and related food products steamer cooker
US20030073042A1 (en) * 2001-10-17 2003-04-17 Cernigliaro George J. Process and materials for formation of patterned films of functional materials
KR100646793B1 (ko) * 2001-11-13 2006-11-17 삼성전자주식회사 씬너 조성물
JP2003195517A (ja) * 2001-12-14 2003-07-09 Shipley Co Llc フォトレジスト用現像液
JP2003195518A (ja) * 2001-12-14 2003-07-09 Shipley Co Llc フォトレジスト用現像液
US6900003B2 (en) * 2002-04-12 2005-05-31 Shipley Company, L.L.C. Photoresist processing aid and method
US6769945B2 (en) * 2002-08-24 2004-08-03 Industrial Technology Research Institute Method of growing isomeric carbon emitters onto triode structure of field emission display
US6798127B2 (en) * 2002-10-09 2004-09-28 Nano-Proprietary, Inc. Enhanced field emission from carbon nanotubes mixed with particles
WO2004047166A2 (en) * 2002-11-15 2004-06-03 E.I. Du Pont De Nemours And Company Process for using protective layers in the fabrication of electronic devices
US20040140861A1 (en) * 2002-11-15 2004-07-22 Alvarez Robby L. High temperature superconducting mini-filter resonator configuration with low sensitivity to variations in substrate thickness and resonator patterning
EP1586112B1 (en) * 2003-01-22 2006-12-27 E.I. du Pont de Nemours and Company Binder diffusion patterning of a thick film paste layer
JP4040544B2 (ja) * 2003-06-27 2008-01-30 東京応化工業株式会社 レジスト用現像液組成物およびレジストパターンの形成方法
US7186498B2 (en) * 2003-10-02 2007-03-06 Willi-Kurt Gries Alkaline developer for radiation sensitive compositions
US7125648B2 (en) * 2003-12-19 2006-10-24 Fuji Photo Film Co., Ltd. Method for forming images
US7402373B2 (en) * 2004-02-05 2008-07-22 E.I. Du Pont De Nemours And Company UV radiation blocking protective layers compatible with thick film pastes
CN1973247A (zh) * 2004-05-27 2007-05-30 纳幕尔杜邦公司 光聚合物保护层的显影剂

Similar Documents

Publication Publication Date Title
JP2006510046A5 (ja)
JP2007534012A5 (ja)
JP2005508268A5 (ja)
JP2008516418A5 (ja)
JP2003167333A5 (ja)
JP2994556B2 (ja) ホトレジスト剥離方法
JP2006520104A5 (ja)
JP2008292975A5 (ja)
JP2011529583A5 (ja)
JP2000036931A5 (ja)
JP2006215545A5 (ja)
EP1998364A3 (en) Semiconductor thin film forming system
JP2005509177A5 (ja)
JP2005526989A5 (ja)
TW200737300A (en) Reflexible photo-mask blank, manufacturing method thereof, reflexible photomask, and manufacturing method of semiconductor apparatus
JP2009509292A5 (ja)
JP2001056564A (ja) 光重合性記録要素およびフレキソ印刷版作製方法
JP2003270791A5 (ja)
JP2003280202A5 (ja)
JP2000231194A5 (ja)
JP2005509176A5 (ja)
JP2000298345A5 (ja)
EP0838717A3 (en) Dual purpose camera for photographic and digital images
JP2001330957A5 (ja)
JP2005136289A5 (ja)