JP2006506829A - 連結検出器ピクセル、光子/パルスカウント輻射線像形成素子 - Google Patents
連結検出器ピクセル、光子/パルスカウント輻射線像形成素子 Download PDFInfo
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Abstract
Description
本発明はX線及びガンマ線輻射エネルギーを検出及び画像分析するための半導体装置の分野に関する。より詳細には、本発明は二つの異なる半導体基板上に多数の電気的に接近可能な点を持つピクセルセル内に電流を発生する装置上への入射輻射エネルギーにより画像分析が行なわれる、かかる装置に関する。特に、本発明は輻射線光子/パルスカウント像形成素子に関し、そこでは総体的に、ピクセルセルが光導電体/検出器基板上に加工された検出器ピクセルを持ち、この検出器ピクセルの数はカウント/読出し基板上に加工されたピクセルカウント回路の数より大きく、このピクセルカウント回路と検出器ピクセルは電気的に連通している。
1.各光子により発生される電荷パルスは個々に処理されるため、吸収された光子のエネルギーについての情報を提供することができる。このようにして光子はそれらのエネルギー水準に依存してカウントされまたは廃棄されることができる。低いエネルギーの光子は典型的にはもし廃棄されないと画像品質を低下させる四散光子であるため、これはまたコントラスト解像度を強化する。
2.光子パルスのため電子信号はデジタル化され、かつカウントされるので、この装置は背景雑音、検出器漏洩/暗電流等にそんなに敏感ではない。“暗電流”は衝突輻射線の存在を欠く装置内の背景電流であることに注意されたい。
3.外部デジタル化に対する必要はない。なぜならそれは“オンチップ”でなされ、それが像形成システムをより簡単にかつ潜在的に安価とする。
現在最も望ましくかつ最も輻射線吸収性のCdTe及びCdZnTeのような光導電体材料を利用する像形成素子において、エネルギー分解能は“ホールトラッピング”により制限される。簡単に言えば、高エネルギー光子がこれらの半導体検出器材料内に捕獲される毎に、等量の電子及びホール信号が発生される。電子は全く移動しやすく、検出器ピクセルの電子コレクタ電極に比較的早く到達する。しかし、ホールは電子に比べてかなりゆっくりと移動し、ホールがそれらの移動(例えば負に荷電した電極に向けての)を完了することができる前にそれらはトラップされる。結果として最終誘導信号はエネルギー分解能が損なわれる。
電子が電荷コレクタ検出器ピクセルに向けてドリフトするとき、それらはまた横方向に離れるようにドリフトする。光導電体検出器材料の厚さ及び吸収された光子のエネルギーに依存して、電荷パッケージが検出器ピクセルに到達する時間までに電荷パッケージの寸法が増え、その電荷密度は減少している。もし検出器ピクセルが項目(1)によりホールトラッピングに対する補償のためより小さくされたなら、そのときは電荷パッケージは一つより多いピクセルにより共有されるであろう。この検出器ピクセル間の電荷共有は電荷パッケージの共有を受けるピクセル検出器と組み合わされたピクセル信号カウント回路中に誤記号(ヒットまたはミス)を作りうる。なぜなら一つの当初から大きなパルスは二つの別個の小さなパルスとして見られるからである。
図1Aは従来技術のSBBASIC型半導体輻射線像形成素子の断面の概略側面図であり、そこでは各ピクセル回路は単一の検出器ピクセルと組み合わされており、また逆もまた同様であり、ピクセル検出器の数とピクセル回路の間の対応比1をもつ像形成素子を示す。
Claims (14)
- 複数の連結検出器ピクセルセルを含むことを特徴とするX線及びガンマ線輻射エネルギー像形成素子。
- 連結検出器ピクセルセルが半導体検出器基板上に配置された複数の検出器ピクセルを持つ検出器ピクセルアレイを含み、ピクセルアレイの検出器ピクセルがASIC読出し基板上に配置された単一のピクセル信号カウント回路と電気的に連通していることを特徴とする請求項1に記載のX線及びガンマ線輻射エネルギー像形成素子。
- 検出器ピクセルアレイが検出器基板上に加工された複数の検出器ピクセルを含み、検出器基板が輻射表面とピクセル表面を持ち、このピクセル表面上に検出器ピクセルが配置されかつ組み合わせて実質的にピクセル表面を覆い、各ピクセル検出器が更にピクセルコレクタ電極及び組み合わされたピクセルコンタクトを含み、ピクセルコレクタ電極が半導体検出器基板内に発生した電荷を集めるためのものであり、かつピクセルコンタクトがピクセル検出器からの電荷を伝導するための単一のピクセルカウント回路と連通していることを特徴とする請求項2に記載の連結検出器ピクセルセル。
- 複数の連結検出器ピクセルセルがASIC読出し基板上の回路アレイ内に加工された複数のピクセル信号カウント回路を含み、ASIC読出し基板が検出器基板のピクセル表面に対向して配置された読出し表面を持ち、各ピクセルセルがピクセルセルの読出し表面上に加工された多数のピクセル信号入力部を持つ単一のピクセル信号カウント回路を持ち、多数のピクセル信号入力部がASIC読出し基板のピクセル信号カウント回路と電気的に連通していることを特徴とする請求項2に記載のX線及びガンマ線輻射エネルギー像形成素子。
- ピクセル信号カウント回路が多数のピクセル信号入力部を持ち、各ピクセル信号入力部が検出器ピクセルアレイの別個の検出器ピクセルコンタクトと電気的に連通していることを特徴とする請求項4に記載の連結検出器ピクセルセル。
- 多数のピクセル信号入力部がそれぞれピクセル信号状態調節回路を含むことを特徴とする請求項5に記載のピクセル信号カウント回路。
- 多数のピクセル信号入力部がそれぞれ、信号増幅回路要素、暗電流補償回路要素、パルス幅制御回路要素、利得制御回路要素、パルス形状付与回路要素、比較回路要素、アナログ加算回路要素、及び緩衝回路要素からなる群から選ばれた少なくとも一つの付随的状態調節回路を持つピクセル信号状態調節回路を含むことを特徴とする請求項5に記載のピクセル信号カウント回路。
- ピクセル検出器からの電荷を伝導するための各ピクセル電極上に配置されたピクセルコンタクトが緩衝結合されていることを特徴とする請求項3に記載の連結検出器ピクセルセル。
- ピクセル検出器からの電荷を伝導するための各ピクセル電極上に配置されたピクセルコンタクトがハンダ付け緩衝結合されていることを特徴とする請求項3に記載の連結検出器ピクセルセル。
- 少なくとも一つの連結検出器ピクセルセルを含み、このピクセルセルが多数の検出器ピクセルを持ち、そのピクセルがピクセル信号カウント回路のより少ない数と電気的に連通していることを特徴とするX線及びガンマ線輻射エネルギー像形成素子。
- 連結検出器ピクセルセルが半導体検出器基板上に配置された少なくとも4個の検出器ピクセルを持つ検出器ピクセルアレイを含み、このピクセルアレイの検出器ピクセルがASIC読出し基板上に配置された単一のピクセル信号カウント回路と電気的に連通していることを特徴とする請求項1に記載のX線及びガンマ線輻射エネルギー像形成素子。
- 連結検出器ピクセルセルが半導体検出器基板上に配置された検出器ピクセルのコレクタ電極の組み合わされた平坦面積を持つ検出器ピクセルアレイを含み、この平坦面積がASIC読出し基板上に配置された単一のピクセル信号カウント回路の平坦面積と少なくともほぼ同じであることを特徴とする請求項1に記載のX線及びガンマ線輻射エネルギー像形成素子。
- 高エネルギー輻射線デジタル像形成素子で使用するための連結検出器ピクセルセルにおいて、連結検出器ピクセルセルが半導体検出器基板上に密接して配置された多数の検出器ピクセルの検出器ピクセルアレイを含み、検出器ピクセル全てが単一のピクセル信号カウント回路と電気的に連通しており、ピクセル信号カウント回路が半導体検出器基板に隣接した半導体読出し基板上に配置されていることを特徴とする連結検出器ピクセルセル。
- ピクセル信号カウント回路の数に対するピクセル検出器の数の対応比が少なくとも2であることを特徴とする請求項13に記載の連結検出器ピクセルセル。
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US10/194,336 US7361881B2 (en) | 2002-03-13 | 2002-07-11 | Ganged detector pixel, photon/pulse counting radiation imaging device |
PCT/US2003/020839 WO2004008488A2 (en) | 2002-07-11 | 2003-07-03 | Ganged detector pixel, photon/pulse counting radiation imaging device |
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EP (1) | EP1540730B1 (ja) |
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- 2003-07-03 JP JP2005512631A patent/JP4780765B2/ja not_active Expired - Fee Related
- 2003-07-03 EP EP03817490.0A patent/EP1540730B1/en not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
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EP1540730A2 (en) | 2005-06-15 |
WO2004008488A2 (en) | 2004-01-22 |
EP1540730A4 (en) | 2007-07-11 |
ES2679099T3 (es) | 2018-08-22 |
US7361881B2 (en) | 2008-04-22 |
US20030173522A1 (en) | 2003-09-18 |
WO2004008488A3 (en) | 2004-09-02 |
WO2004008488A9 (en) | 2004-06-10 |
WO2004008488A8 (en) | 2005-02-17 |
EP1540730B1 (en) | 2018-06-13 |
JP4780765B2 (ja) | 2011-09-28 |
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