JP2006345007A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a stable power supply with low resistance and inductance and a ground potential to a semiconductor integrated circuit element, using a decoupling capacitor. <P>SOLUTION: The semiconductor device 9 includes an insulating base body 1, having a concave portion 1a for housing a capacitor 4 in the upper surface thereof, in which a wiring conductor 2 is formed on the periphery of the opening of the concave portion 1a, and a terminal 3 for providing a power supply is formed on the bottom surface of the concave portion 1a; a capacitor 4, housed in the concave portion 1a whose one terminal electrode is connected to the terminal 3 for providing a power supply; a mounting wiring substrate 6, attached on the insulating base body 1 so as to cover the opening of the concave portion 1a, in which through-hole conductors 7, respectively, connected to the other terminal electrode of the capacitor 4 or to the wiring conductor, are formed; and a semiconductor integrated circuit element 8 mounted on the mounting wiring substrate 6, in which via the through-hole conductors 7, an electrode of the power supply is connected to the other terminal electrode of the capacitor 4, and a signal electrode is connected electrically to the wiring conductor 2 of the insulating base body 1, respectively. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor device in which a semiconductor integrated circuit element used in an information processing apparatus such as a computer is mounted. More specifically, a decoupling capacitor for supplying power is disposed in the vicinity of the semiconductor integrated circuit element. The present invention relates to a semiconductor device capable of operating a semiconductor integrated circuit element easily and stably at high speed.

  Conventionally, in order to operate a semiconductor integrated circuit element at high speed and stably, a so-called decoupling capacitor for supplying power to the semiconductor integrated circuit element and suppressing power supply noise is disposed in the vicinity of the semiconductor integrated circuit element. It has been studied to stabilize the power supply potential and ground potential with respect to.

  For example, a recess formed for the purpose of mounting a semiconductor integrated circuit element on a package for housing a semiconductor element constituting a semiconductor device, that is, a bottom surface of a so-called cavity portion, and a back surface of the semiconductor integrated circuit element is made of an alloy brazing material made of gold, silicon, The terminal electrode for signal and power supply provided on the outer periphery of the surface of the semiconductor integrated circuit element and the terminal electrode provided on the outer side of the cavity part of the package for housing the semiconductor element and connected to the wiring conductor are joined together. In the case of wire bonding connection using thin wires made of aluminum or aluminum, the decoupling capacitor connected to the semiconductor integrated circuit element is, for example, a chip capacitor on the circuit board on which the semiconductor element storage package is mounted. Alternatively, it is mounted on the outer periphery of the surface of the semiconductor element storage package.

  However, as the speed of semiconductor integrated circuit elements increases, when a decoupling capacitor is disposed outside the package for housing a semiconductor element, the distance between the decoupling capacitor and the semiconductor integrated circuit element becomes longer. Stable power supply or ground potential supply becomes difficult due to the resistance and inductance of the wiring for connection. Therefore, for the purpose of placing the decoupling capacitor in the vicinity of the semiconductor integrated circuit element, for example, a package for housing the semiconductor element is formed by a ceramic lamination technique, and the power supply wiring and the ground wiring laminated between the dielectric layers are formed in a planar shape. Thus, a decoupling capacitor has been formed inside a package for housing a semiconductor element by forming a capacitance between them.

  In the case of a package for semiconductor element storage using organic multilayer technology, the dielectric constant of the organic resin is low, so that a decoupling capacitor is used inside the package using a dielectric layer as in the case of ceramic multilayer technology. Since it is difficult to form a chip capacitor, a chip capacitor as a decoupling capacitor has been mounted on the outer periphery of a portion where a semiconductor integrated circuit element is mounted.

  In recent years, however, the operation of semiconductor integrated circuit elements has become even faster, so that the effects of the wire bonding connection and the inductance of the fine metal wires can no longer be ignored by mounting the semiconductor integrated circuit element on the package for housing the semiconductor element. In addition, it has become difficult to stably supply the ground potential.

  Therefore, instead of wire bonding connection, a conductor bump such as a solder ball is formed on the terminal electrode of the semiconductor integrated circuit element, and this is used to directly mount and connect to the connection electrode on the semiconductor element storage package or wiring board. The so-called flip chip connection method was devised.

  However, when the semiconductor integrated circuit element is flip-chip mounted, the terminal electrode formed on the surface of the semiconductor integrated circuit element is opposed to the connection electrode on the package or wiring board side, so that the semiconductor integrated circuit element is connected to the semiconductor integrated circuit element. The arrangement of the decoupling capacitor is limited to the outer peripheral portion in the vicinity of the semiconductor integrated circuit element to be mounted.

  Even in this configuration, when the semiconductor integrated circuit element is operated at a higher speed, the decoupling capacitor is disposed on the outer peripheral portion in the vicinity of the semiconductor integrated circuit element, and thus the terminal to which the decoupling capacitor is connected. Since the influence of the resistance and inductance of the wiring to the center of the semiconductor integrated circuit element on which the electrode is formed cannot be ignored, it is difficult to stably supply power and ground potential to the semiconductor integrated circuit element. There was a point.

  The present invention has been devised in view of the above-described problems of the prior art, and an object thereof is to stably supply power and ground potential with low resistance and low inductance to a semiconductor integrated circuit element operating at high speed. It is an object of the present invention to provide a semiconductor device capable of achieving the above.

  As a result of various studies on the problems of the above-described prior art, the present inventor has mounted the semiconductor integrated circuit element on the mounting wiring board which is a relay board by flip chip connection, and this mounting wiring board. A recess is formed in the central portion of the upper surface of the insulating substrate, and a decoupling capacitor is mounted and accommodated in the recess, and a mounting wiring board is placed thereon to electrically connect the semiconductor integrated circuit element and the decoupling capacitor. It has been found that the power supply and the ground potential can be stably supplied with a very low resistance and a low inductance by arranging a decoupling capacitor in the very vicinity of the semiconductor integrated circuit element by adopting a configuration in which the connection is made in the same manner.

  The semiconductor device of the present invention has a concave portion for accommodating a capacitor on the upper surface, and is formed on the bottom surface of the concave portion, the wiring conductor including the signal transmission wiring and the ground connection wiring formed around the opening of the concave portion. An insulating base having a power supply terminal, a capacitor housed in the recess, and one terminal electrode electrically connected to the power supply terminal, and an opening of the recess on the insulating base. A mounting wiring board on which a through conductor that is electrically connected to the other terminal electrode of the capacitor or the wiring conductor is formed, a power electrode, a ground electrode, and a signal electrode, A semiconductor integrated circuit element mounted on a wiring board for mounting, wherein the power supply electrode is connected to the other terminal electrode of the capacitor via the through conductor, and the signal electrode is connected to the insulating substrate. A semiconductor integrated circuit element connected to the signal transmission wiring of the wiring conductor, and wherein the ground electrode is electrically connected to the ground connection wiring of the wiring conductor, respectively. is there.

  According to the semiconductor device of the present invention, a semiconductor integrated circuit element is mounted and mounted on a mounting wiring board attached so as to cover the concave portion in a capacitor as a decoupling capacitor housed in the concave portion of the insulating base. Since the power supply electrode of the semiconductor integrated circuit element is electrically connected through the through conductor formed in the wiring board for the semiconductor, the decoupling capacitor which has been arranged in the outer peripheral portion in the vicinity of the semiconductor integrated circuit element in the conventional semiconductor It can be placed very close to the integrated circuit element, and the distance between the power supply electrode of the semiconductor integrated circuit element and the terminal electrode of the decoupling capacitor can be set to the shortest. Inductance can be minimized. As a result, the power supply to the element for stably operating the semiconductor integrated circuit element operating at high speed and the suppression of power supply noise can be performed extremely effectively and stably.

  As described above in detail, according to the semiconductor device of the present invention, the wiring conductor including the signal transmission wiring and the ground connection wiring, which has the concave portion for accommodating the capacitor on the upper surface and is formed around the opening of the concave portion, An insulating substrate having a power supply terminal formed on the bottom surface of the recess, a capacitor housed in the recess and having one terminal electrode electrically connected to the power supply terminal, and the insulating substrate A mounting wiring board that is attached to cover the opening of the recess and has a through conductor that is electrically connected to the other terminal electrode of the capacitor or the wiring conductor, a power supply electrode, and a ground electrode, A semiconductor integrated circuit device mounted on the wiring board for mounting, wherein the power supply electrode is connected to the other terminal electrode of the capacitor via the through conductor, A semiconductor integrated circuit element, wherein a signal electrode is connected to the signal transmission wiring of the wiring conductor of the insulating base, and the ground electrode is electrically connected to the ground connection wiring of the wiring conductor, respectively. Therefore, it is possible to dispose the decoupling capacitor, which has been conventionally disposed on the outer peripheral portion in the vicinity of the semiconductor integrated circuit element, in close proximity to the semiconductor integrated circuit element. Since the distance between the terminal electrode of the decoupling capacitor and the terminal electrode of the decoupling capacitor can be set to the shortest, the resistance and inductance of the connecting portion between them can be minimized. As a result, the power supply to the element for stably operating the semiconductor integrated circuit element operating at high speed and the suppression of power supply noise can be performed extremely effectively and stably.

  Next, the semiconductor device of the present invention will be described in detail with reference to the accompanying drawings.

  FIG. 1 is a sectional view showing an example of an embodiment of a semiconductor device of the present invention. In the figure, 1 is an insulating substrate, 1a is a recess formed in the center of the upper surface thereof, 2 is a wiring conductor formed around the opening of the recess 1a, and 3 is a power supply terminal formed on the bottom surface of the recess 1a. is there. The wiring conductor 2 is not shown except for typical ones.

  A capacitor 4 is housed in the recess 1 a and one terminal electrode is electrically connected to the power supply terminal 3, and serves as a decoupling capacitor. 5, one terminal electrode of the capacitor 4 and the power supply terminal 3 are electrically connected. Conductive bumps, for example, solder bumps.

  Reference numeral 6 denotes a mounting wiring board, 7 denotes a through conductor formed therein, and 8 denotes a semiconductor integrated circuit element. The mounting wiring board 6 is attached on the insulating substrate 1 so as to cover the opening of the recess 1a, and the semiconductor integrated circuit element 8 is mounted on the mounting wiring board 6.

  The through conductor 7 is electrically connected to the other terminal electrode or the wiring conductor 3 of the capacitor 4 and is also electrically connected to a power supply electrode or a signal electrode which is a terminal electrode of the semiconductor integrated circuit element 8. The power supply electrode of the semiconductor integrated circuit element 8 is electrically connected to the other terminal electrode of the capacitor 4 and the signal electrode is electrically connected to the wiring conductor 2 formed on the insulating base 1 via the conductor 7. Thus, the semiconductor device 9 of the present invention is configured.

  Note that 10 is an external electric circuit board on which the semiconductor device 9 is mounted, 11 is a connection conductor formed on the upper surface thereof, and 12 is solder for electrically connecting the mounting electrode of the semiconductor device 9 and the connection conductor 11. Or the like.

  FIG. 2 is a sectional view similar to FIG. 1, showing another example of the embodiment of the semiconductor device of the present invention. In the semiconductor device 9 ′ shown in FIG. 2, instead of the conductor bump 5 that electrically connects the capacitor 4 and the power supply terminal 3, a conductor layer 5 made of a connecting metal such as a conductive adhesive or solder. 'Is used.

  In these examples, the insulating substrate 1 is a ceramic material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon carbide sintered body, a silicon nitride sintered body, or a glass ceramic. Or composite insulation made by bonding polymer insulation material such as epoxy, BT resin, polyimide, benzocyclobutene, polynorbornene, fluororesin, etc., or inorganic insulation powder made of ceramic material with thermosetting polymer insulation material It is made of a material or the like, for example, a substantially rectangular flat plate. Alternatively, a multilayer wiring portion in which an interlayer insulating layer made of a polymer insulating material and a wiring conductor are laminated on a base made of a ceramic material may be formed. A concave portion 1a for mounting the capacitor 4 is formed at the center of the upper surface. Further, a wiring conductor 2 for signal transmission or ground connection is formed around the opening of the recess 1a, and the periphery of the opening is a mounting portion for mounting the mounting wiring board 6.

  The wiring conductor 2 is a conductor for electric wiring made of, for example, tungsten, molybdenum, molybdenum-manganese, copper, silver, silver-palladium, and the like. From the periphery of the opening of the recess 1a on the upper surface of the insulating base 1 to the lower surface of the insulating base 1, for example. A plurality is formed by metal powder metallization or the like.

  The power supply terminal 3 is formed on the bottom surface of the recess 1a of the insulating base 1 in a wide area or in the shape of a connection pad by the same material and method as the wiring conductor 2, and is supplied with power from the external electric circuit board 10 or the like. Wiring is connected.

  If the insulating substrate 1 is made of, for example, an aluminum oxide sintered body, an appropriate organic binder, solvent, plasticizer, dispersant, etc. are added to the raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide. A mixture is made into a mud shape, and a plurality of ceramic green sheets are obtained by adopting a conventionally known doctor blade method to obtain a sheet shape, and then the ceramic green sheet is appropriately punched. At the same time, a metal paste to be used as the wiring conductor 2 and the power supply terminal 3 is printed, and finally, the ceramic green sheets are laminated on top and bottom and fired at a temperature of about 1600 ° C.

  The metal paste used as the wiring conductor 2 and the power supply terminal 3 is, for example, a paste made by adding and mixing an appropriate organic binder, solvent, plasticizer, etc. to tungsten powder if these are made of tungsten metallization. The material is used, and the adherence formation to the ceramic green sheet is performed by adopting a screen printing method or the like.

  Various capacitors 4 can be used as long as they have characteristics that can be used as decoupling capacitors. For example, a multilayer chip capacitor formed by alternately laminating ceramic dielectric layers made of barium titanate or the like and internal electrode layers made of nickel or the like, or tantalum or aluminum by anodizing the surface of a ceramic dielectric substrate. A ceramic capacitor in which terminal electrodes such as those are formed may be used.

  Further, a large number of terminal electrodes for connection corresponding to the through conductors 7 of the mounting wiring board 6 are usually formed on the upper surface of the capacitor 4. For example, when the dielectric layer and the internal electrode layer constituting the multilayer capacitor are stacked in the vertical direction as a horizontal layer between the insulating substrate 1 and the semiconductor integrated circuit element 8, the internal electrode layer The connection with the terminal electrode for connection is made by a through conductor formed through the dielectric layer. Further, when the dielectric layer and the internal electrode layer are laminated in the horizontal direction as a vertical layer between the insulating substrate 1 and the semiconductor integrated circuit element 8, the dielectric layer and the internal electrode layer are led out to the laminated cross section that becomes the upper surface of the capacitor 4. Thus, a terminal electrode for connection is formed so as to be connected to the internal electrode layer.

  In this way, when the capacitor 4 has a large number of terminal electrodes corresponding to the through conductors 7 for electrical connection to the semiconductor integrated circuit element 8, each of both end faces is generally used like a chip capacitor generally used. Compared to the case where the power source and the ground are connected only from one terminal electrode at a time, the current flowing per terminal electrode is reduced, and the current flowing distance is shortened. The influence of the resistance and inductance on the power supply can be reduced.

  Note that the capacitor 4 is not limited to a single capacitor, and may be used as a decoupling capacitor that is housed and mounted in the recess 1 a of the insulating base 1 and supplies power to the semiconductor integrated circuit element 8 through the through conductor 7. Alternatively, a plurality of capacitors may be housed and function as a decoupling capacitor.

  Such a capacitor 4 is accommodated in a recess 1a which is a capacitor mounting portion of the insulating base 1, and one terminal electrode thereof and the power supply terminal 3 are electrically connected by a conductor bump 5 or a conductor layer 5 '. .

  A mounting wiring board 6 is attached to the insulating base 1 so as to cover the opening of the recess 1a, and a part of the through conductor 7 is electrically connected to the other terminal electrode of the capacitor 4 in the recess 1a. The other through conductor 7 is electrically connected to the wiring conductor 2 for signal transmission or grounding around the opening of the recess 1a.

  The semiconductor integrated circuit element 8 is mounted and fixed on the mounting wiring substrate 6 via an adhesive such as solder or epoxy resin, and the other terminal electrode of the capacitor 4 and the semiconductor integrated circuit element 8 are mounted. The power electrode is electrically connected by solder or the like, and the signal electrode located on the outer periphery of the semiconductor integrated circuit element 8 and the wiring conductor 2 formed around the opening of the recess 1a of the insulating substrate 1 are also electrically connected by solder or the like. Connected.

  Thus, the semiconductor devices 9 and 9 ′ of the present invention are completed. Further, the upper surface of the insulating substrate 1 is covered with the upper surfaces of the semiconductor integrated circuit element 8 and the surrounding insulating substrate 1. A resin covering material may be applied, or a lid may be bonded to the upper surface of the insulating substrate 1 so as to cover the semiconductor integrated circuit element 8.

  The thus completed semiconductor device 9, 9 ′ of the present invention has the conductive conductor 12 connected to the wiring conductor 2 led to the lower surface of the insulating substrate 1 and the connecting conductor 11 of the external electric circuit board 10. As a result, the electrodes of the semiconductor integrated circuit element 8 are connected to the external electric circuit via the through conductor 7, the wiring conductor 2 and the conductive connection member 12 at the same time as being mounted on the external electric circuit board 11. Will be.

  According to such semiconductor devices 9 and 9 ′ of the present invention, the mounting wiring board attached to the capacitor 4 as the decoupling capacitor housed in the recess 1a of the insulating base 1 so as to cover the recess 1a. Since the semiconductor integrated circuit element 8 is mounted and mounted on 6 and the power supply electrode of the semiconductor integrated circuit element 8 is electrically connected through the through conductor 7 formed in the wiring board 6 for mounting, the conventional semiconductor integrated circuit element The decoupling capacitor disposed on the outer peripheral portion in the vicinity of the semiconductor integrated circuit element 8 can be disposed very close to the semiconductor integrated circuit element 8, and the distance between the power supply electrode of the semiconductor integrated circuit element 8 and the terminal electrode of the capacitor 4 Can be set to the shortest, the resistance and inductance of the connecting portion between them can be minimized. As a result, the power supply to the element for stably operating the semiconductor integrated circuit element 8 operating at high speed and the suppression of the power supply noise can be performed extremely effectively and stably.

  It should be noted that the present invention is not limited to the examples of the embodiments described above, and various improvements and modifications can be made without departing from the gist of the present invention. For example, the capacitor 4 as a decoupling capacitor mounted on the semiconductor devices 9 and 9 ′ may be formed by one capacitive element as shown in FIGS. 1 and 2, and a plurality of capacitors are mounted. May be.

It is sectional drawing which shows an example of embodiment of the semiconductor device of this invention. It is sectional drawing which shows the other example of embodiment of the semiconductor device of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Insulation substrate 1a ... Recessed part 2 ... Wiring conductor 3 ... Power supply terminal 4 ... Capacitor 6 ... Wiring board for mounting 7 .... Penetration conductor 8 .... Semiconductor integrated circuit element 9, 9 '... Semiconductor device

Claims (1)

A wiring conductor including a signal transmission wiring and a ground connection wiring formed around the opening of the concave portion, and a power supply terminal formed on the bottom surface of the concave portion. An insulating substrate having,
A capacitor housed in the recess and electrically connected to one terminal electrode of the power supply terminal;
A mounting wiring board attached on the insulating base so as to cover the opening of the recess, and formed with through conductors electrically connected to the other terminal electrode of the capacitor or the wiring conductor;
A semiconductor integrated circuit device having a power electrode, a ground electrode, and a signal electrode, and mounted on the mounting wiring board, the power electrode being the other terminal electrode of the capacitor via the through conductor A semiconductor integrated circuit element, wherein the signal electrode is connected to the signal transmission wiring of the wiring conductor, and the ground electrode is electrically connected to the ground connection wiring of the wiring conductor, respectively. A semiconductor device comprising:

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