JP2006324685A5 - - Google Patents

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Publication number
JP2006324685A5
JP2006324685A5 JP2006200847A JP2006200847A JP2006324685A5 JP 2006324685 A5 JP2006324685 A5 JP 2006324685A5 JP 2006200847 A JP2006200847 A JP 2006200847A JP 2006200847 A JP2006200847 A JP 2006200847A JP 2006324685 A5 JP2006324685 A5 JP 2006324685A5
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JP
Japan
Prior art keywords
layer
nitride semiconductor
type
substrate
manufacturing
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Pending
Application number
JP2006200847A
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English (en)
Japanese (ja)
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JP2006324685A (ja
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Priority to JP2006200847A priority Critical patent/JP2006324685A/ja
Priority claimed from JP2006200847A external-priority patent/JP2006324685A/ja
Publication of JP2006324685A publication Critical patent/JP2006324685A/ja
Publication of JP2006324685A5 publication Critical patent/JP2006324685A5/ja
Pending legal-status Critical Current

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JP2006200847A 2002-07-08 2006-07-24 窒化物半導体素子の製造方法及び窒化物半導体素子 Pending JP2006324685A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006200847A JP2006324685A (ja) 2002-07-08 2006-07-24 窒化物半導体素子の製造方法及び窒化物半導体素子

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002198761 2002-07-08
JP2002218199 2002-07-26
JP2002276309 2002-09-20
JP2003004919 2003-01-10
JP2006200847A JP2006324685A (ja) 2002-07-08 2006-07-24 窒化物半導体素子の製造方法及び窒化物半導体素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2003190549A Division JP3985742B6 (ja) 2002-07-08 2003-07-02 窒化物半導体発光ダイオード

Publications (2)

Publication Number Publication Date
JP2006324685A JP2006324685A (ja) 2006-11-30
JP2006324685A5 true JP2006324685A5 (de) 2009-11-05

Family

ID=37544075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006200847A Pending JP2006324685A (ja) 2002-07-08 2006-07-24 窒化物半導体素子の製造方法及び窒化物半導体素子

Country Status (1)

Country Link
JP (1) JP2006324685A (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4116387B2 (ja) * 2002-09-30 2008-07-09 株式会社東芝 半導体発光素子
US7795054B2 (en) * 2006-12-08 2010-09-14 Samsung Led Co., Ltd. Vertical structure LED device and method of manufacturing the same
US9178121B2 (en) * 2006-12-15 2015-11-03 Cree, Inc. Reflective mounting substrates for light emitting diodes
US7534638B2 (en) * 2006-12-22 2009-05-19 Philips Lumiled Lighting Co., Llc III-nitride light emitting devices grown on templates to reduce strain
JP2008166311A (ja) * 2006-12-26 2008-07-17 Toshiba Corp 半導体発光素子及び半導体発光装置
JP2009099893A (ja) 2007-10-19 2009-05-07 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子
JP5315070B2 (ja) * 2008-02-07 2013-10-16 昭和電工株式会社 化合物半導体発光ダイオード
US20110127567A1 (en) 2008-06-02 2011-06-02 Korea University Industrial & Academic Collaboration Foundation Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates
KR20100008123A (ko) * 2008-07-15 2010-01-25 고려대학교 산학협력단 이중 히트 씽크층으로 구성된 지지대를 갖춘 고성능수직구조의 반도체 발광소자
JP2010040838A (ja) 2008-08-06 2010-02-18 Toshiba Corp 発光装置
KR101004858B1 (ko) * 2008-11-06 2010-12-28 삼성엘이디 주식회사 화합물 반도체 발광 소자 및 그 제조방법
US8188496B2 (en) 2008-11-06 2012-05-29 Samsung Led Co., Ltd. Semiconductor light emitting device including substrate having protection layers and method for manufacturing the same
JP5564799B2 (ja) * 2009-01-28 2014-08-06 住友電気工業株式会社 窒化ガリウム系半導体電子デバイスを作製する方法
JP2010192701A (ja) * 2009-02-18 2010-09-02 Showa Denko Kk 発光ダイオード、発光ダイオードランプ及び発光ダイオードの製造方法
US8580593B2 (en) 2009-09-10 2013-11-12 Micron Technology, Inc. Epitaxial formation structures and associated methods of manufacturing solid state lighting devices
JP5462032B2 (ja) * 2010-03-04 2014-04-02 Ｄｏｗａエレクトロニクス株式会社 金属被膜Ｓｉ基板ならびに接合型発光素子およびその製造方法
JP5571988B2 (ja) * 2010-03-26 2014-08-13 パナソニック株式会社 接合方法
JP5095840B2 (ja) * 2011-04-26 2012-12-12 株式会社東芝 半導体発光素子
JP5095848B1 (ja) * 2011-05-18 2012-12-12 株式会社東芝 半導体発光素子
JP5762901B2 (ja) * 2011-09-15 2015-08-12 株式会社東芝 半導体発光素子、ウェーハ、半導体発光素子の製造方法及びウェーハの製造方法
JP5398892B2 (ja) * 2012-09-14 2014-01-29 株式会社東芝 半導体発光素子
WO2015019677A1 (ja) * 2013-08-09 2015-02-12 日産自動車株式会社 半導体装置の製造方法
CN111952424B (zh) * 2020-08-11 2022-06-14 吴小明 一种具有P面钝化层的AlGaInN基LED制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5376580A (en) * 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
JP3448441B2 (ja) * 1996-11-29 2003-09-22 三洋電機株式会社 発光装置
JP4146527B2 (ja) * 1997-01-24 2008-09-10 ローム株式会社 半導体発光素子およびその製法
JP3914615B2 (ja) * 1997-08-19 2007-05-16 住友電気工業株式会社 半導体発光素子及びその製造方法
JP3469484B2 (ja) * 1998-12-24 2003-11-25 株式会社東芝 半導体発光素子およびその製造方法
JP3614070B2 (ja) * 2000-01-17 2005-01-26 日亜化学工業株式会社 窒化物半導体発光ダイオード

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