JP2006318965A - Method and apparatus for inspecting semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To measure the same electrode pad of the same wafer stably for a plurality of times when evaluating electric characteristics in a wafer. <P>SOLUTION: A method for inspecting a semiconductor device includes a process for forming a first needle mark by allowing a probe to come into contact with an electrode pad in the electrode pad of a prescribed semiconductor chip; a process for storing information on a first needle mark position; a process for shifting the position of the probe by a prescribed amount to come into contact with the electrode pad of the prescribed semiconductor chip again, and forming a second needle mark at a position that does not overlap with the first one; a process for storing information on a second needle mark position; and a process for allowing the probe to come into contact with a position corresponding to the first and second needle mark positions in the electrode pad of the prescribed semiconductor chip in each electrode pad of a plurality of semiconductor chips, based on the position information of the prescribed semiconductor chip and the information on the first and second needle mark positions for inspecting the electric characteristics of the semiconductor chip. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor device inspection method and a semiconductor device inspection apparatus, and in particular, a semiconductor device inspection method and a semiconductor device inspection for a contact positioning method between a probe and an electrode pad when measuring the same electrode pad in a wafer multiple times. Relates to the device.

  A large number of semiconductor devices on which electrical element circuits are formed are formed on the surface of the wafer, and before the electrical element circuits are cut into individual semiconductor devices (chips), the electrical characteristics of each electrical element circuit are inspected. In order to do so, the quality is judged by the probe device. This probe apparatus generally has a probe corresponding to each semiconductor device on the wafer, and the probe card connected to the tester and each semiconductor device on the wafer are sequentially matched to bring the probe into contact with the electrode pad of the semiconductor device. Thus, it is configured to perform an electrical measurement.

  By the way, in order to perform an accurate electrical measurement, the probe of the probe card and the electrode pad of the semiconductor device must be brought into contact with each other. For this reason, the stage on which the wafer is placed is controlled with high accuracy, It is necessary to accurately align (align) the electrode pad with respect to the stylus before measurement. Therefore, in the conventional probe apparatus, the probe pad of the probe card is brought into contact with the electrode pad of the semiconductor device to perform an electrical characteristic inspection, and at a position away from the test head to which the probe card is detachably fixed, An imaging unit (alignment apparatus) provided with a camera is arranged, and an alignment (positioning) region for aligning a wafer below the imaging unit is arranged at a fixed distance in a plane.

  Therefore, the chuck part of the stage to which the wafer is supplied is first moved to the alignment region to position the wafer, and then the positioned wafer is moved to the probing region directly below the probe by the movement of the stage. Electrical measurements are made. For this reason, since a mechanical error such as a moving mechanism for moving the stage is included in the moving amount, accurate position correction is required.

  Hereinafter, a contact position correction method using a conventional color camera will be described with reference to FIG. 7 (see, for example, Patent Document 1).

  Until a needle mark is made on the wafer on the chuck, the conventional method is used (step S401). Next, the stage holding the wafer is moved under the color camera (step S402). Next, the center of the needle mark is aligned with the cross on the screen of the color camera, and the position is registered (step S403). Next, the center of the electrode pad is aligned with the cross on the screen, and the position is registered (step S404). Next, a positional deviation between the center position of the needle trace and the center position of the electrode pad is calculated (step S405). Next, the chuck is corrected by slightly moving the calculated value (step S406).

  Here, the color camera is used as the camera used for the imaging means in order to solve the problem that the needle mark cannot be seen in the monochrome camera when the electrode pad is a gold bump, a solder bump, an aluminum bump, or the like. It is.

By performing the steps as described above, it is possible to accurately correct the minute alignment between the electrode pad of the semiconductor device and the probe.
JP 2004-63877 A

  Ideally, the electrical measurement of a semiconductor device should have a small number of measurements. In reality, however, operation errors, test program bugs, fluctuations in measurement values due to probe device failures, and comparisons between measurement value devices when multiple probe devices are used, etc. The same electrode pad needs to be measured multiple times.

  In addition, the same electrode pad in the same wafer needs to be measured a plurality of times in the case of semiconductor device evaluation in the research and development stage, apparatus evaluation when introducing a new probe apparatus, test program verification, and the like. In such a case, if the needle is erected several times at the exact same position, the contact resistance changes with the subsequent stylus due to surface shape changes such as irregularities generated on the electrode pad surface with the previous stylus. Occasionally, accurate measurements cannot be obtained. However, if a new wafer without a needle trace is prepared for each measurement purpose in order to obtain an accurate measurement value, the lead time becomes long and a huge material cost is required.

  In particular, in the method of correcting the contact position between the electrode pad and the probe described in Patent Document 1, it is assumed that the number of measurements is reduced. For this reason, if measurement is performed a plurality of times using this method, the measurement is always performed at the same position of the electrode pad, so that it is easily affected by contact resistance and the measurement value fluctuates.

  In order to prevent this, it is possible to shift the needle trace by changing the contact position setting. However, the probe device setting is changed each time the measurement is repeated, and the contact position is adjusted each time. Must be implemented. This makes it impossible to perform automatic measurement and causes a problem that inspection efficiency decreases.

  Therefore, in view of the above problems, an object of the present invention is to provide a method for positioning a contact between an electrode pad and a probe when measuring the same electrode pad in a wafer a plurality of times, thereby obtaining an accurate measurement value. An object of the present invention is to provide a semiconductor device inspection method and a semiconductor device inspection apparatus capable of simultaneously reducing the evaluation lead time, reducing the evaluation material cost, and improving the inspection efficiency.

  In order to solve the above problems, a semiconductor device inspection method according to claim 1 of the present invention is a semiconductor in which a probe is brought into contact with an electrode pad of a semiconductor chip formed on a wafer to inspect the electrical characteristics of the semiconductor chip. A method for inspecting a device, comprising: forming a first needle trace by bringing the probe into contact with the electrode pad in an electrode pad of a predetermined semiconductor chip among the plurality of semiconductor chips; Storing the first-time needle track position information of the probe when forming the second-time needle track, shifting the position of the probe by a predetermined amount, and again contacting the electrode pad of the predetermined semiconductor chip, A step of forming a second needle trace at a position not overlapping with the first needle trace, and a second needle trace position of the probe when the second needle trace is formed. A plurality of semiconductor chip electrode pads on the basis of the step of storing information, the position information of the predetermined semiconductor chip, and the first and second needle trace position information in the electrode pads of the predetermined semiconductor chip Each of the electrode pads of the predetermined semiconductor chip, the probe is brought into contact with positions corresponding to the first and second needle trace positions, and the electrical characteristics of the semiconductor chip are inspected. .

  The method for inspecting a semiconductor device according to claim 2 is the same as the method for inspecting a semiconductor device according to claim 1, in the same manner as the step of forming the second needle trace on the electrode pad of the predetermined semiconductor chip. Third and subsequent needle traces are formed, at least three or more pieces of needle trace position information that do not overlap each other are stored, and each of the electrode pads of the plurality of semiconductor chips is stored based on the plurality of needle trace position information. In the method, the electrical characteristics of the semiconductor chip are inspected by bringing the probe into contact with positions corresponding to the plurality of needle trace positions on the electrode pads of the predetermined semiconductor chip.

  The semiconductor device inspection method according to claim 3, wherein a probe is brought into contact with an electrode pad of a semiconductor chip formed on a wafer to inspect the electrical characteristics of the semiconductor chip, and a plurality of the semiconductor device inspection methods A step of forming a first needle trace by bringing the probe into contact with the electrode pad in an electrode pad of a predetermined semiconductor chip of the semiconductor chips; and the electrode pad of the predetermined semiconductor chip and the first time A step of storing image data obtained by imaging a needle trace, and calculating and storing a first needle trace position determined by the electrode pad size, the center coordinates of the first needle trace and the needle trace area from the image data. And setting the number of measurements, and calculating the shift amount for forming the second and subsequent needle traces at a position that does not overlap with the first needle trace A step of storing, a step of calculating and storing the second and subsequent needle trace positions from the electrode pad size, the first needle trace position and the shift amount, and the position of the predetermined semiconductor chip Based on the information and the first and second needle trace position information on the electrode pads of the predetermined semiconductor chip, in each of the electrode pads of the plurality of semiconductor chips, the electrode pad of the predetermined semiconductor chip And inspecting the electrical characteristics of the semiconductor chip by bringing the probe into contact with positions corresponding to the first and second needle trace positions.

  5. The semiconductor device inspection method according to claim 4, wherein a probe is brought into contact with an electrode pad of a semiconductor chip formed on a wafer to inspect the electrical characteristics of the semiconductor chip, wherein the semiconductor device is inspected. From the electrode pad size of the chip and the needle trace size formed when the probe measured in advance is brought into contact with the electrode pad, the plurality of the needle traces fit within the electrode and do not overlap with each other In each of the electrode pads of the plurality of semiconductor chips based on the step of calculating the needle trace position, the step of storing information on the plurality of needle trace positions, and the information on the plurality of needle trace positions, And inspecting the electrical characteristics of the semiconductor chip by bringing the probe into contact with a position corresponding to the needle trace position.

  6. The semiconductor device inspection apparatus according to claim 5, further comprising: a prober that makes a probe contact an electrode pad of a semiconductor chip formed on a wafer; and a terminal that is electrically connected to the probe. A semiconductor device inspection apparatus including a tester for operating a semiconductor chip and detecting an output signal of the semiconductor chip to inspect the electrical characteristics of the semiconductor chip, and can be formed so as not to overlap with the electrode pads of the semiconductor chip Means for storing needle trace position information relating to a plurality of needle traces and positions corresponding to the plurality of needle trace positions in each of the electrode pads of the plurality of semiconductor chips based on the plurality of needle trace position information. And a means for inspecting the electrical characteristics of the semiconductor chip by bringing the probe into contact therewith.

  The semiconductor device inspection apparatus according to claim 6 is the semiconductor device inspection apparatus according to claim 5, wherein the means for storing the needle trace position information is an electrode pad of a predetermined semiconductor chip among the plurality of semiconductor chips. Means for forming a first needle trace by bringing the probe into contact with the electrode pad; and means for storing first needle trace position information of the probe when the first needle trace is formed. A means for shifting the position of the probe by a predetermined amount, contacting the electrode pad of the predetermined semiconductor chip again, and forming a second needle trace at a position not overlapping the first needle trace; Means for storing second trace information of the probe when the second trace is formed.

  The semiconductor device inspection apparatus according to claim 7 is the semiconductor device inspection apparatus according to claim 5, wherein the means for storing the needle trace position information is an electrode pad of a predetermined semiconductor chip among the plurality of semiconductor chips. Means for storing image data obtained by imaging the electrode pad of the predetermined semiconductor chip and the first needle trace when the probe is brought into contact with the electrode pad to form the first needle trace; Means for calculating and storing a first needle trace position determined by the electrode pad size, the center coordinates and the needle trace area of the first needle trace from the image data, and setting the number of measurements; Means for calculating and storing a shift amount for forming the second and subsequent needle traces at a position that does not overlap with the needle traces, the electrode pad size, and the first needle And means for storing along with the location and from the shift amount calculating a needle trace position of the second and subsequent times.

  9. The semiconductor device inspection apparatus according to claim 8, wherein the means for storing the needle trace position information includes the electrode pad size of the semiconductor chip and the probe measured in advance. A plurality of needles that fit within the electrode and do not overlap with each other when forming a plurality of needle traces on the electrode pad from the size of the needle trace formed when contacting the electrode pad Means for calculating a trace position and means for storing information relating to the plurality of needle trace positions are provided.

  According to the method for inspecting a semiconductor device according to claim 1 of the present invention, the step of forming the first needle trace by bringing the probe into contact with the electrode pad, and the probe at the time of forming the first needle trace A step of storing the first needle trace position information, a position of the probe is shifted by a predetermined amount, and again brought into contact with an electrode pad of a predetermined semiconductor chip, and the second time at a position not overlapping with the first needle trace. And a step of storing the second needle trace position information of the probe when the second needle trace is formed, so that the probe and the electrode pad are applied to the same electrode pad. When the step of making a contact and making a needle trace is performed a plurality of times at least twice, it is possible to perform a contact process so that the needle traces do not overlap by shifting by a predetermined amount defined in advance. For this reason, since it is possible to minimize the change in the contact resistance between the electrode pad and the probe during the inspection, a stable measurement result can be obtained without damaging the constituent film layer under the electrode pad.

  Thus, by providing a contact positioning method between the electrode pad and the probe when measuring the same electrode pad in the wafer multiple times, it is possible to obtain a precise measurement value and shorten the evaluation lead time and the evaluation. An excellent effect of simultaneously realizing reduction in material cost and improvement in inspection efficiency can be exhibited.

  According to a second aspect of the present invention, in the electrode pad of the predetermined semiconductor chip, the third and subsequent needle traces are formed in the same manner as the second needle trace forming step, and at least three or more needles that do not overlap each other The track position information is stored, and on the basis of the plurality of needle trace position information, in each of the electrode pads of the plurality of semiconductor chips, the probe is placed at a position corresponding to the plurality of needle trace positions on the electrode pad of the predetermined semiconductor chip. Since the electrical characteristics of the semiconductor chip are inspected for contact, it is possible to cope with the case where the same electrode pad is measured three times or more.

  According to the semiconductor device inspection method of the third aspect of the present invention, the step of bringing the probe into contact with the electrode pad to form the first needle trace, the electrode pad of the predetermined semiconductor chip, and the first needle trace A step of storing image data obtained by picking up an image, a step of calculating and storing a first needle trace position determined by the electrode pad size, the center coordinates of the first needle trace and the needle trace area from the image data, and measurement. A step of calculating and storing a shift amount for forming the second and subsequent needle traces at a position that does not overlap with the first needle trace, the electrode pad size, and the first needle trace position. Since the second and subsequent needle trace positions are calculated and stored from the shift amount, the same effect as in claim 1 can be obtained, and the second and subsequent times can be obtained from the set number of measurements and the shift amount. The trace position can be calculated.

  According to the semiconductor device inspection method of the fourth aspect of the present invention, from the electrode pad size of the semiconductor chip and the needle trace size formed when the probe measured in advance is brought into contact with the electrode pad, the needle trace is obtained. And a step of calculating a plurality of needle trace positions that do not overlap with each other and storing information on the plurality of needle trace positions, the same effect as in claim 1 is obtained, The position of the needle trace on the electrode pad when measuring a plurality of times before the start of measurement can be confirmed.

  According to the semiconductor device inspection apparatus of the fifth aspect of the present invention, means for storing needle trace position information regarding a plurality of needle traces that can be formed so as not to overlap each other on the electrode pads of the semiconductor chip, and a plurality of needle traces Based on the position information, in each of the electrode pads of the plurality of semiconductor chips, it is provided with means for inspecting the electrical characteristics of the semiconductor chip by contacting the probe at positions corresponding to the plurality of needle trace positions. It is possible to perform contact positioning between the electrode pad and the probe when measuring the same electrode pad in the wafer multiple times, and it is possible to obtain an accurate measurement value and shorten the evaluation lead time, reduce the evaluation material cost, An excellent effect of simultaneously improving the inspection efficiency can be exhibited.

  According to a sixth aspect of the present invention, means for storing needle trace position information includes means for forming a first needle trace by bringing a probe into contact with an electrode pad in an electrode pad of a predetermined semiconductor chip among a plurality of semiconductor chips. , Means for storing the first needle trace position information of the probe when the first needle trace is formed, the position of the probe is shifted by a predetermined amount, and again brought into contact with the electrode pad of the predetermined semiconductor chip, Means for forming the second needle trace at a position not overlapping the first needle trace, and means for storing second needle trace position information of the probe when the second needle trace is formed. Since it is provided, an effect similar to that of the first aspect can be obtained.

  According to a seventh aspect of the present invention, the means for storing the needle trace position information is obtained when the first needle trace is formed by bringing the probe into contact with the electrode pad in the electrode pad of a predetermined semiconductor chip among the plurality of semiconductor chips. Means for storing image data obtained by imaging an electrode pad and a first needle trace of a predetermined semiconductor chip, a first determined by the electrode pad size, the center coordinates of the first needle trace and the needle trace area from the image data; The means for calculating and storing the second needle trace position and the number of times of measurement are set, and the shift amount for forming the second and subsequent needle traces is calculated and stored at a position that does not overlap the first needle trace. And means for calculating and storing the second and subsequent needle trace positions from the electrode pad size, the first needle trace position, and the shift amount, the same effects as in the third aspect can be obtained. .

  According to another aspect of the present invention, the means for storing the needle trace position information is based on the electrode pad size of the semiconductor chip and the needle trace size formed when the probe measured in advance is brought into contact with the electrode pad. Since it is provided with means for calculating a plurality of needle trace positions where the needle traces fit within the electrode and do not overlap with each other when forming a plurality of pads on the pad, and means for storing information relating to the plurality of needle trace positions. The same effect as item 4 can be obtained.

Hereinafter, a semiconductor device inspection apparatus and a semiconductor device inspection method according to embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a conceptual diagram of a semiconductor device inspection apparatus employing a wafer contact positioning method according to all embodiments of the present invention. Therefore, in all the embodiments of the present invention, description will be made using the reference numerals in FIG. 1 as appropriate.
(First embodiment)
The semiconductor device inspection apparatus according to the first embodiment of the present invention will be described below with reference to FIG.

  As shown in FIG. 1, a prober 104 for bringing a probe 104a into contact with an electrode pad 110a of a semiconductor chip formed on a wafer 110, and a terminal electrically connected to the probe 104a, the semiconductor chip via the terminal. And a tester 105 for detecting the output signal and inspecting the electrical characteristics of the semiconductor chip.

  In this case, the probe device 101 mainly includes a stage 102, a stage drive motor 103, a probe card 104 provided with a probe 104a, a tester 105, an alignment optical device 106, a CCD camera 107 on the stage side for imaging the probe 104a, a color The camera 108, the control unit 109, the display 111, the CPU 112 installed in the control unit 109, and the like are included.

  On the upper part of the stage 102, a chuck portion 102a for mounting and holding the wafer 110 is provided. The stage 102 is configured to be movable in the X, Y, Z direction and the θ rotation direction about the Z axis by a stage driving motor 103 controlled by the control unit 109, and is held by the chuck unit 102a of the stage 102. 110 can be moved.

  Electrode pads 110a are formed on the surface of a large number of semiconductor devices on the wafer 110, and only one electrode pad 110a is shown in FIG. 1 for convenience of explanation. A large number of electrode pads 110a such as ten or several hundreds are formed. The probe card 104 is provided with a probe 104a corresponding to the electrode pad 110a of each semiconductor device on the wafer 110.

  Therefore, the electrical characteristics of each semiconductor device can be inspected by bringing the probe 104a of the probe card 104 connected to the tester 105 into contact with the electrode pad 110a of the wafer 110.

  A CCD camera 107 is attached to the chuck portion 102a of the stage 102 to detect the needle tip position by imaging the probe 104a from below. The stage 102 is moved to move the CCD camera 107, the tip position of the probe 104 a is measured while adjusting its focus, and the result is input to the control unit 109.

  The alignment optical device 106 includes imaging means such as a CCD camera, recognizes the pattern of the semiconductor device on the wafer 110, and inputs it to the control unit 109. In the control unit 109, based on the information obtained by the alignment optical device 106 and the position information of the tip of the probe 104a obtained by the CCD camera 107, the tip of the probe 104a and the wafer 110 are detected using a known image processing technique. Positioning with the electrode pad 110a is automatically performed.

  Furthermore, the probe device according to the embodiment of the present invention includes means for storing needle trace position information regarding a plurality of needle traces that can be formed so as not to overlap each other on the electrode pad 110a of the semiconductor chip, and a plurality of needle trace position information. Basically, each of the electrode pads 110a of the plurality of semiconductor chips is provided with means for inspecting the electrical characteristics of the semiconductor chip by bringing the probe 104a into contact with the positions corresponding to the plurality of needle trace positions.

  In this case, the CPU 112, which is a feature of the present invention, is provided in the control unit 109. The CPU 112 performs a predetermined amount (predetermined amount) when performing a process of making a probe mark by contacting the probe 104a and the electrode pad 110a to the same electrode pad 110a on the wafer 110 at least twice. A mechanism is provided that performs a contact process so that the needle marks do not overlap each other by shifting the shift amount by X, Y). In this configuration, the CPU 112 is installed in the control unit 109, but may be incorporated separately.

  According to the first embodiment, when the process of making a probe mark by contacting the probe 104a and the electrode pad 110a to the same electrode pad 110a on the wafer 110 is performed a plurality of times at least twice, it is defined in advance. Since the contact processing is performed so that the needle traces do not overlap by shifting by a predetermined amount (shift amounts X, Y), it is possible to minimize the change in the contact resistance between the electrode pad and the probe at the time of inspection. Therefore, a stable measurement result can be obtained without damaging the constituent film layer under the electrode pad.

Further, according to the first embodiment, since inspection can be performed by always contacting the wafer and the probe with a constant overdrive amount during inspection, highly reliable inspection is performed without damaging the constituent film layers under the electrode pads. be able to.
(Second Embodiment)
Next, a semiconductor device inspection apparatus and a semiconductor device inspection method according to the second embodiment of the present invention will be described with reference to FIGS.

  In the present embodiment, the means for storing the needle trace position information in the first embodiment is configured such that the probe 104a is brought into contact with the electrode pad 110a in the electrode pad 110a of a predetermined semiconductor chip among the plurality of semiconductor chips. Means for forming the first needle trace, means for storing the first needle trace position information of the probe 104a when the first needle trace is formed, and shifting the position of the probe 104a by a predetermined amount to Means for re-contacting the electrode pad 110a of the semiconductor chip and forming the second needle trace at a position not overlapping the first needle trace, and the second probe trace when the second needle trace is formed. Means for storing the second needle trace position information.

  First, in FIG. 1, the CCD camera 107 and the alignment optical device 106 are used to align the probe 104a and the electrode pad 110a of the wafer 110 in the same manner as in the first embodiment.

  That is, the stage 102 is moved to a position where the probe 104a of the probe card 104 and the CCD camera 107 face each other, the probe 104a is imaged by the CCD camera 107, the position of the tip of the probe 104a is measured, and the result is displayed on the control unit 109. To enter. Next, after aligning the position of the CCD camera 107 with the position of the alignment optical device 106, the wafer 110 is fixedly held on the chuck portion 102 a of the stage 102, and the stage 102 is moved below the alignment optical device 106 by the stage driving motor 103. The position of the electrode pad 110 a on the wafer 110 is imaged by the alignment optical device 106, and the data is input to the control unit 109. Based on the input data, the control unit 109 calculates the position of the electrode pad 110a with respect to the position of the probe 104a, and controls the amount of movement of the stage 102 so that the probe 104a is appropriately brought into contact with the electrode pad 110a. The above operation is a normal alignment operation performed until step S101 in FIG.

  Next, the wafer contact positioning method in the case where the same electrode pad is measured a plurality of times in this embodiment performs the following operations in steps S102 to S109.

  That is, the chuck portion 102a is moved below the color camera 108 in order to confirm whether or not the needle trace 201 is present on the electrode pad 110a shown in FIG. 3 (step S102). Next, it is confirmed by the display 111 whether the needle trace 201 exists in the electrode pad 110a (step S103). Next, if there is a needle trace 201 as a result of the confirmation, the needle trace 201 is set as a contact position at the time of the first measurement. If there is no needle trace 201, for example, the needle trace 201 is applied to the electrode pad 110a (step S104). Up to this point, at least one needle trace 201 is attached to the electrode pad 110a. Next, for example, the needle traces 201a to 201h in FIG. 3 do not overlap with the needle trace 201 and are put on the electrode pad 110a, and a needle trace is made by the number of times of measurement while checking on the display 111 (step S105). ). Next, the center position coordinates X and Y of all the needle marks 201 and 201a to 201h are registered in the CPU 112 (step S106). Next, the measurement order is set (step S107). For example, the default setting is the order registered in step 106. However, since the center position coordinates of all registered needle traces 201 and 201a to 201h are already stored in the CPU 112, the measurement order can be easily changed. An example of the measurement order is as shown in (1) to (9) of FIG. 3 (step S108). Thereafter, the actual measurement is performed according to the measurement order set in step 108 for all contact positions positioned in step 106 by a normal probing operation (step S109).

In the second embodiment, the contact positioning method in the semiconductor device inspection method is specifically shown in the procedure, and the operation and effect thereof are the same as those of the semiconductor device inspection apparatus described in the first embodiment. .
(Third embodiment)
Next, a semiconductor device inspection apparatus and a semiconductor device inspection method according to the third embodiment of the present invention will be described with reference to FIGS.

  In this embodiment, the means for storing the needle trace position information in the first embodiment is the electrode pad size of the semiconductor chip and the needle trace formed when the probe 104a measured in advance is brought into contact with the electrode pad 110a. Based on the size, when forming a plurality of needle traces on the electrode pad 110a, a means for calculating a plurality of needle trace positions that are within the electrode and do not overlap with each other, and information on the plurality of needle trace positions is stored. And means for performing.

  As shown in FIG. 4, the wafer contact positioning method when measuring the same electrode pad a plurality of times in this embodiment performs the following operations in steps S201 to S209.

  That is, as shown in FIG. 5, the electrode pad size X (110b), the electrode pad size Y (110c) of the electrode pad 110a, the length 301 on the short side of the needle trace 201, the length 302 on the long side and the needle trace. Shift amounts X (304) and Y (305) for shifting are prepared in advance (step S201). Next, these parameters are input on the parameter setting screen of the display 111 (step S202). Next, the total number (measurable number of times N) that can be arranged so that the needle mark 201 does not overlap with the electrode pad 110a is calculated, and the needle mark center coordinates X, Y (for the measurable number of times N that is the calculation result) 303) are registered in the CPU 112 (step S203). Next, the positional relationship of the needle traces 201 corresponding to the measurable number N of times in the electrode pad 110a is displayed on the display 111 (step S204). Next, the number n of measurement executions is determined based on the display result, and the measurement order is registered in the CPU 112 (step S205). Thereafter, the actual measurement is performed according to the measurement order set in step S205 for all the contact positions positioned in step S205 by a normal probing operation (step S206).

According to the third embodiment, since the position of the needle trace on the electrode pad can be confirmed when measuring a plurality of times before the start of measurement, an inspection plan can be created for each measurement purpose, and an efficient inspection can be performed. . The third embodiment specifically shows the procedure of the semiconductor device inspection apparatus and the semiconductor device inspection method described in the first embodiment, and the operation and effects thereof are the same as those of the first embodiment. This is the same as the semiconductor device inspection apparatus and the semiconductor device inspection method described.
(Fourth embodiment)
Next, a semiconductor device inspection apparatus and a semiconductor device inspection method according to the fourth embodiment of the present invention will be described with reference to FIG.

  In the present embodiment, the means for storing the needle trace position information in the first embodiment is configured such that the probe 104a is brought into contact with the electrode pad 110a in the electrode pad 110a of a predetermined semiconductor chip among the plurality of semiconductor chips. Means for storing image data obtained by imaging the electrode pad 110a of the predetermined semiconductor chip and the first needle trace when the second needle trace is formed, the electrode pad size and the first needle trace from the image data The first needle trace position determined by the center coordinates and the needle trace area is calculated and stored, and the number of measurements is set, and the second and subsequent needle traces are formed at positions that do not overlap with the first needle trace position. A second and subsequent needle trace positions are calculated from the means for calculating and storing the shift amount to be used, the electrode pad size, the first needle trace position, and the shift amount. And means for 憶.

  The wafer contact positioning method in the case where the same electrode pad is measured a plurality of times in the present embodiment performs the following steps S301 to S304.

  First, the number of measurement executions n and shift amounts X and Y for shifting the needle trace are prepared in advance and are input on the parameter setting screen of the display 111 (step S301). Next, the same operations as in steps S101 to S104 shown in FIG. 1 are performed. That is, the needle mark 201 is attached to the wafer 110 on the chuck portion 102a. Next, an image is taken by the color camera 108 so that the electrode pad 110a and the needle trace 210 fit on the screen of the display 111, and the image data is registered in the CPU 112 (step S302). The needle trace 201 at this time is the first contact position when performing a plurality of measurements. Next, using the number n of measurement executions set in step S301, the shift amounts X and Y, and the image data of the electrode pad 110a and the needle trace 210 registered in step S302, the second to nth contacts are made. The position is calculated by the CPU 112 and registered in the control unit 109 (step S303). Thereafter, for the contact position set in step S303, the CPU 112 calculates and sets the order in which the moving distance is short, and performs an actual measurement for the number n of measurement executions set in step S301 by a normal probing operation. This is performed (step S304).

  In the fourth embodiment, the semiconductor device inspection apparatus and the semiconductor device inspection method described in the first embodiment are specifically shown in the procedure, and the operation and effects thereof are described in the first embodiment. This is the same as the semiconductor device inspection apparatus and the semiconductor device inspection method.

  A semiconductor device inspection method and a semiconductor device inspection apparatus according to the present invention enable accurate measurement values to be obtained at the time of inspection of a semiconductor device, simultaneously reducing evaluation lead time, reducing evaluation material costs, and improving inspection efficiency. This is realized and useful for a contact positioning method or the like when the electrode pad and the probe are shifted and contacted so as not to overlap when the same electrode pad of the wafer is measured a plurality of times.

1 is a conceptual diagram of a semiconductor device inspection apparatus employing a wafer contact positioning method according to all embodiments of the present invention. It is a flowchart of the contact positioning method in the case of measuring the same electrode pad of the wafer concerning the 2nd Embodiment of this invention in multiple times. It is a figure showing the example of a contact positioning at the time of employ | adopting the contact positioning method of the wafer which concerns on the 2nd Embodiment of this invention, and a measurement order example. It is a flowchart of the contact positioning method in the case of measuring the same electrode pad of the wafer which concerns on the 3rd Embodiment of this invention in multiple times. It is a figure showing the definition of the electrode pad size which concerns on the 3rd Embodiment of this invention, needle trace size, and shift amount. It is a flowchart of the contact positioning method in the case of measuring the same electrode pad of the wafer which concerns on the 4th Embodiment of this invention in multiple times. 10 is a flowchart of a conventional wafer contact alignment and position correction method.

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 Probe apparatus 102 Stage 102a Chuck part 103 Stage drive motor 104 Probe card 104a Probe 105 Tester 106 Alignment optical apparatus 107 CCD camera 108 Color camera 109 Control part 110 Wafer 110a Electrode pad 110b Electrode pad size X
110c Electrode pad size Y
111 Display 112 CPU
201 Needle trace 201a to 201h Example of needle trace during multiple measurements 301 Length in the short side direction of the needle trace 302 Length in the long side direction of the needle trace 303 Needle trace center coordinates X, Y
304 Shift amount X
305 Shift amount Y

Claims (8)

A semiconductor device inspection method for inspecting electrical characteristics of the semiconductor chip by contacting a probe to an electrode pad of the semiconductor chip formed on a wafer,
A step of forming a first needle trace by bringing the probe into contact with the electrode pad in an electrode pad of a predetermined semiconductor chip among the plurality of semiconductor chips;
Storing the first needle trace position information of the probe when the first needle trace is formed;
Shifting the position of the probe by a predetermined amount, contacting the electrode pad of the predetermined semiconductor chip again, and forming a second needle trace at a position not overlapping the first needle trace;
Storing the second needle trace position information of the probe when the second needle trace is formed;
Based on the position information of the predetermined semiconductor chip and the first and second needle trace position information on the electrode pad of the predetermined semiconductor chip, the predetermined pad in each of the electrode pads of the plurality of semiconductor chips And a step of inspecting the electrical characteristics of the semiconductor chip by contacting the probe at positions corresponding to the first and second needle trace positions on the electrode pads of the semiconductor chip.   In the electrode pad of the predetermined semiconductor chip, the third and subsequent needle traces are formed in the same manner as the second needle trace forming step, and at least three or more pieces of needle trace position information that do not overlap each other. Based on the plurality of needle trace position information, in each of the electrode pads of the plurality of semiconductor chips, the position corresponding to the plurality of needle trace positions in the electrode pad of the predetermined semiconductor chip, 2. The method for inspecting a semiconductor device according to claim 1, wherein an electrical characteristic of the semiconductor chip is inspected by bringing a probe into contact therewith. A method for inspecting a semiconductor device, wherein a probe is brought into contact with an electrode pad of a semiconductor chip formed on a wafer to inspect the electrical characteristics of the semiconductor chip,
In the electrode pad of a predetermined semiconductor chip among the plurality of semiconductor chips, the step of bringing the probe into contact with the electrode pad to form a first needle trace;
Storing image data obtained by imaging the electrode pad of the predetermined semiconductor chip and the first needle trace;
Calculating and storing the first pad trace position determined by the electrode pad size, the center coordinates of the first needle trace and the needle trace area from the image data;
Setting the number of measurements, calculating and storing a shift amount for forming the second and subsequent needle traces at positions that do not overlap with the first needle traces;
Calculating and storing the second and subsequent needle trace positions from the electrode pad size, the first needle trace position and the shift amount;
Based on the position information of the predetermined semiconductor chip and the needle trace position information after the first time and the second time on the electrode pad of the predetermined semiconductor chip, the predetermined pad in each of the electrode pads of the plurality of semiconductor chips. And inspecting the electrical characteristics of the semiconductor chip by contacting the probe at positions corresponding to the first and second and subsequent needle trace positions on the electrode pads of the semiconductor chip. . A method for inspecting a semiconductor device, wherein a probe is brought into contact with an electrode pad of a semiconductor chip formed on a wafer to inspect the electrical characteristics of the semiconductor chip,
A plurality of needle traces that fit within the electrode and do not overlap with each other from the electrode pad size of the semiconductor chip and the needle trace size formed when the probe measured in advance is brought into contact with the electrode pad Calculating the needle trace position of
Storing information on the plurality of needle trace positions;
Based on the information on the plurality of needle trace positions, in each of the electrode pads of the plurality of semiconductor chips, the probe is brought into contact with a position corresponding to the plurality of needle trace positions, so that electrical characteristics of the semiconductor chip are obtained. And a method for inspecting a semiconductor device. A prober for contacting a probe to an electrode pad of a semiconductor chip formed on a wafer, and a terminal electrically connected to the probe, operating the semiconductor chip via the terminal and detecting an output signal thereof A semiconductor device inspection apparatus comprising a tester for inspecting electrical characteristics of the semiconductor chip,
Means for storing needle trace position information relating to a plurality of needle traces that can be formed so as not to overlap each other on the electrode pads of the semiconductor chip;
Based on the plurality of needle trace position information, in each of the electrode pads of the plurality of semiconductor chips, the probe is brought into contact with a position corresponding to the plurality of needle trace positions to obtain electrical characteristics of the semiconductor chip. A semiconductor device inspection apparatus comprising: means for inspecting. The means for storing the needle trace position information is
In an electrode pad of a predetermined semiconductor chip among the plurality of semiconductor chips, means for contacting the probe with the electrode pad to form a first needle trace;
Means for storing first-time needle track position information of the probe when the first-time needle track is formed;
Means for shifting the position of the probe by a predetermined amount, contacting the electrode pad of the predetermined semiconductor chip again, and forming a second needle trace at a position not overlapping with the first needle trace;
6. The semiconductor device inspection apparatus according to claim 5, further comprising means for storing second-time needle trace position information of the probe when the second-time needle trace is formed. The means for storing the needle trace position information is
In the electrode pads of a predetermined semiconductor chip among the plurality of semiconductor chips, the electrode pad of the predetermined semiconductor chip and the first when the probe is brought into contact with the electrode pad to form a first needle trace Means for storing image data obtained by imaging the first needle trace;
Means for calculating and storing the first pad trace position determined by the electrode pad size, the central coordinates of the first needle trace and the needle trace area from the image data;
Means for setting the number of measurements and calculating and storing a shift amount for forming the second and subsequent needle traces at a position not overlapping the first needle trace;
6. The semiconductor device inspection apparatus according to claim 5, further comprising means for calculating and storing the second and subsequent needle trace positions from the electrode pad size, the first needle trace position, and the shift amount. The means for storing the needle trace position information is
When forming a plurality of needle traces on the electrode pad from the electrode pad size of the semiconductor chip and the needle trace size formed when the probe measured in advance is brought into contact with the electrode pad, the needle Means for calculating a plurality of the needle trace positions where the traces are within the electrode and do not overlap each other;
6. The semiconductor device inspection apparatus according to claim 5, further comprising means for storing information relating to the plurality of needle trace positions.

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