JPH10150081A - Probing method and prober - Google Patents

Abstract

PROBLEM TO BE SOLVED: To bring a needle into contact with a specified position all the time at a specified contact pressure by computing the deflecting amount of a stage caused by the contact position of the needle and the deviation of the contact position caused by this deflecting amount, and correcting the relative position with respect to the needle of a semiconductor wafer by the computed deviation. SOLUTION: A wafer 100, on which a plurality of semiconductor chips are aligned, is mounted on a stage 2. The contact position of a needle 4 to the wafer 100 on the stage 2 is computed based on the chip instructing information for instructing the semiconductor chip for contact with the needle 4. Then, the estimated amount of the slant change of the stage 2 when the needle 4 is brought into contact with the wafer 100 at the contact position is computed. The correcting amount for correcting the change in contact position caused by the estimated amount of the slant change is computed. Based on the correcting amount, the stage 2 is relatively moved with respect to the needle 4, and the deviation of the wafer 100 with respect to the needle 4 is corrected.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for measuring electrical characteristics of a plurality of semiconductor chips formed on a wafer. The present invention relates to a probing method and a prober that sequentially contact electrode pads of a chip.

[0002]

2. Description of the Related Art In the manufacture of semiconductor chips, it is examined whether a large number of chips formed on a wafer operate normally. This is performed in order to improve productivity by removing defective chips that do not operate normally from a later assembling process and to promptly feed back an inspection result as to whether the manufacturing process is normal. When inspecting a semiconductor chip formed on a wafer, the wafer is set in a device called a prober, and a stylus is used.
Is brought into contact with the electrode pad of the chip, an electric signal is applied to a predetermined needle from the IC tester, and an electric signal output to another needle is detected. The wafer inspected in this way is cut by a dicing device and then assembled.

FIG. 1 is a diagram showing a semiconductor chip formed on a wafer. As shown in FIG. 1, a plurality of semiconductor chips 110 are formed on a wafer 100 in a lattice shape. An electrode pad 120 is formed on each semiconductor chip 110, and the electrode pad 120 and a terminal of a lead frame are connected by a bonding wire during assembly. Inspection of the electrical characteristics of the semiconductor chip is performed using the electrode pads 12.
This is carried out by bringing the needle into contact with zero.

FIG. 2 is a diagram showing a schematic configuration of a conventional example of a general wafer inspection apparatus. In FIG. 2, reference numeral 1
Is a prober, 2 is a stage for holding a mounted wafer, 3 is a probe card, 4 is a needle provided on the probe card 3, 5 is a member for holding the probe card 3, and 6 is a tester. , 7 indicate the rotation axis of the tester 7. The stage 2 is movable in a three-dimensional direction by a moving mechanism, and is provided with a mechanism for sucking a wafer. The needle 4 is made in accordance with the electrode pad of the semiconductor chip to be inspected, and the probe card 3 is replaced every time the arrangement of the electrode pad of the semiconductor chip to be inspected is different. An electrode connected to the needle 4 is provided on the upper surface of the probe card 3, and at the time of inspection, the tester 6 rotates around the rotation shaft 7 to contact the electrode of the probe card, and the terminal of the tester 6 and the needle 4 are connected. Connected. In this state,
A predetermined signal is applied from the tester 6 to detect an output signal from the semiconductor chip, and it is checked whether the output signal is normal. A plurality of wafers 100 to be inspected are housed in a wafer cassette and supplied, placed on the stage 2 by a transfer arm (not shown), and returned to the wafer cassette again after the inspection, and collected. The positional relationship between the electrodes of the semiconductor chips and the needles 4 is precisely positioned on the wafer 100 placed on the stage 2 by an image system (not shown). Here, such a mechanism is omitted because it is not directly related to the invention.

[0005] When performing the inspection, the stage is moved so that the electrode of the semiconductor chip to be inspected is located directly below the needle 4, and then the stage is raised to bring the electrode of the semiconductor chip into contact with the needle 4. When the inspection is completed, the stage is lowered, and the same operation is performed for the next semiconductor chip to be inspected. A large number of semiconductor chips are formed on one wafer, and the above operation is repeated for all of them, so that it takes a long time to inspect one wafer.

[0006] In recent years, an improvement in inspection throughput has been demanded in order to improve productivity, and as a measure therefor, a method called multi-probing for simultaneously inspecting a plurality of semiconductor chips has been adopted. FIG. 3 is a view for explaining this multi-probing.
The two sets of b are provided so as to simultaneously contact the electrode pads of two adjacent semiconductor chips 110a and 110b. Although two semiconductor chips are inspected at the same time in the drawing, a larger number of semiconductor chips may be inspected at the same time.
Therefore, the number of needles is very large,
In addition, the length of the arranged needles from end to end is also increased.

[0007]

FIG. 4 is a diagram showing a state in which the needle 4 is in contact with the electrode pad 120. FIG. As shown in FIG. 4A, the tip of the needle 4 is bent, and this tip contacts the electrode pad 120. The needle 4 is made of a thin metal and has elasticity, and is brought into contact with a certain contact pressure by pressing the wafer 100 placed on the stage. Therefore, when the number of needles increases, a large force is applied to the stage 2. There is no problem when this force is applied to the vicinity of the center of stage 2, but when this force is applied to the periphery of stage 2,
The needle 4 is no longer parallel to the upper surface of the stage, that is, the wafer surface, and forms an angle O.

Therefore, as shown in FIG. 4 (2), there arises a problem that all the needles do not come into contact with a uniform contact pressure. In the figure, the wafer 100 is
Are greatly inclined, and contact is made on the right side of the figure, but not on the left side, so that measurement cannot be performed. As shown in the figure, even if the inclination is not large, a slight difference in the contact pressure between the left and right needles occurs if the inclination is to some extent. It is sufficient if all the needles are within the predetermined contact pressure range. However, if the needle pressure is too large, a problem such as damage to the electrode pad occurs.If the needle pressure is too small, the contact resistance increases and normal inspection cannot be performed. Problems arise. Note that this problem occurs not only because of the deflection of the stage due to the contact of the needle, but also when the parallelism between the needle, that is, the probe card and the stage is insufficient. This problem becomes more pronounced as the number of needles increases and the distance between the needles at both ends increases.

The stage 2 moves in three axial directions,
It also has a rotation mechanism for rotating the upper surface. Therefore, when the contact pressure with the needle is applied to the periphery of the upper surface of the stage 2, the distortion appears in a complicated form, but typically, as shown in (3) of FIG. It rotates around the lower rotation center O, and the amount of rotation is considered to be determined by the moment. When such a rotation occurs, as shown in (3) of FIG. 4, the needle moves so as to contact at the position A on the upper surface of the stage, and when the stage is raised, the rotation causes the upper surface of the stage to be rotated. The position of A changes to the position of A ', and the contact position is shifted by the amount shown. Such a shift causes a problem that the needle contacts the semiconductor chip outside the electrode pad and damages the semiconductor chip.

Further, in the conventional example, the semiconductor chip to be measured is relatively moved so as to be positioned below the needle, and then the wafer is raised to a predetermined position to bring the needle into contact with the electrode pad of the semiconductor chip. Just
The contact pressure of the needle was not particularly controlled.
Because of the elasticity of the needle, the contact pressure was still in the desired range. However, when the above-described bending occurs, even if the wafer is raised to a predetermined position with respect to the needle, the actual contact pressure varies depending on the contact position, and the contact pressure does not always fall within a desired range. .

In order to prevent the above-mentioned problems, measures such as increasing the rigidity of the stage and improving the accuracy of the needle and the probe card have been taken. However, since the number of needles is increasing more and more, the overall contact pressure is increasing and the diameter of the wafer is being increased, such measures alone cannot be said to be sufficient.

An object of the present invention is to solve such a problem, and an object of the present invention is to realize a probing method and a prober in which a needle always contacts a predetermined position with a predetermined contact pressure.

[0013]

FIG. 5 is a diagram showing a basic configuration of a probing method and a prober according to a first embodiment of the present invention. Reference numeral 20 denotes a stage base, 21 denotes an X stage, 22 denotes a Y stage, and 23 denotes a Z stage. The stage 2 is moved by the stage driving means 54. 100 is a wafer.

In order to achieve the above object, a probing method and a prober according to a first aspect of the present invention calculate the amount of deflection of a stage due to a contact position of a needle and a deviation of a contact position caused by the deflection, thereby obtaining a needle for a semiconductor wafer. Is corrected by this deviation. That is,
The probing method according to the first aspect of the present invention is a probing method in which a wafer 100 on which a plurality of semiconductor chips are arranged is placed on a stage 2, and a stylus 4 is sequentially contacted with an electrode pad of each semiconductor chip. Calculating the contact position of the stylus 4 on the stage 2 on the wafer 10) based on chip instruction information indicating a semiconductor chip to be brought into contact with the stylus 4; Calculating a predicted amount of change in inclination of the stage 2 when the stage 2 is brought into contact, and calculating a correction amount for correcting a change in the contact position caused by the predicted amount of change in inclination; And a step of moving relative to the stylus 4.

[0015] The prober according to the first aspect of the present invention comprises:
A prober for placing the wafer on which the plurality of semiconductor chips is arranged on the stage and sequentially bringing the probe into contact with the electrode pads of each semiconductor chip;
Of the stylus 4 on the stage 2 based on the chip instruction information for instructing the semiconductor chip 110 to be brought into contact with the wafer 10.
A contact position calculating means 51 for calculating a contact position to zero, a predicted amount of change in inclination of the stage 2 when the stylus 4 is brought into contact with the wafer 100 at the contact position, and a contact generated by the predicted amount of change in inclination. The correction amount calculating means 52 for calculating a correction amount for correcting a change in the position, and the stage 2 so that the stylus 4 contacts the electrode pad 120 of the semiconductor chip 110 specified by the chip instruction information. Movement control means 5 that controls the stage 2 to move relative to the stylus 4 by a correction amount,
3 is provided.

The above correction eliminates the deviation. However, in the first embodiment, since the inclination of the needle and the wafer is not adjusted, the needle and the wafer are inclined by the amount of the deflection. The gap is
When the semiconductor chip to be measured is relatively moved under the needle to elevate the wafer to a predetermined position, it gradually occurs after the needle comes into contact with the surface of the wafer. Therefore, it is desirable to correct the deviation during this process. In addition, since the deviation gradually occurs after the needle comes into contact with the surface of the wafer, it is desirable that the correction be performed gradually in accordance with the change in the contact pressure. In practice, a correction amount is calculated stepwise according to the contact pressure, a sensor for detecting the contact pressure is provided, and the correction is performed stepwise according to the detected contact pressure.

In order to achieve the above object, a probing method and a prober according to a second aspect of the present invention enable adjustment of the inclination of a stage and calculate a correction amount from a predicted amount of change in the inclination of the stage due to a contact position of a needle. Then, the inclination of the stage is corrected by this correction amount. Since the inclination of the stage is corrected so as to cancel the change in inclination caused by the contact pressure with the needle, the needle and the wafer are held in parallel, and there is no shift in the contact position and no difference in the contact pressure between the needles at both ends.

The change in the inclination gradually occurs after the needle comes into contact with the surface of the wafer when the semiconductor chip to be measured is relatively moved below the needle to raise the wafer to a predetermined position. Therefore, it is desirable that the correction of the inclination change is performed during this process. In practice, a correction amount is calculated stepwise according to the contact pressure, a sensor for detecting the contact pressure is provided, and the correction is performed stepwise according to the detected contact pressure.

Further, in order to achieve the above object, the probing method and the prober according to the third aspect of the present invention make it possible to adjust the tilt of the stage, to detect the relative tilt of the stage with respect to the needle, Adjust the tilt of the stage so that it is parallel to the needle. If such a tilt adjustment of the stage is performed between the time when the needle comes into contact with the surface of the wafer and the time when a predetermined contact pressure is reached, the stage is always kept parallel to the needle, so that the contact position shifts. Also, there is no difference in contact pressure between the needles at both ends. Note that with the configuration of the third aspect, adjustment can be made so that the probe card is parallel to the stage even if the probe card is inclined with respect to the stage.

Further, in order to realize the above object, the probing method and the prober according to the fourth aspect of the present invention are provided with a sensor for detecting a contact pressure and control the contact pressure. Thereby, a constant contact pressure is always obtained.

[0021]

FIG. 6 is a diagram showing the configuration of a stage according to a first embodiment of the present invention. In general, the axis of movement in the vertical direction is called the Z axis.
An axis and a movement axis in two directions perpendicular to a horizontal plane perpendicular thereto are described as an X axis and a Y axis. In the drawing, only the Z-axis moving mechanism and the rotating mechanism are shown, and the X-axis moving mechanism and the Y-axis moving mechanism are not shown. The structure shown in FIG. 6 has been conventionally used except for the pressure sensor, and the relevant parts will be briefly described here.

As shown in the drawing, an X stage 21 moves on a base 20, a Y-axis moving mechanism is provided on the X stage 21, and a Y stage 22 moves. A rotating mechanism and a Z-axis moving mechanism are provided on the. The rotating mechanism includes a rotating member 233 held by a rotating base 234 via a bearing.
33 is designed to be rotatable around the Z axis. Although a rotation drive mechanism for rotating the rotation member 233 is provided, it is not shown. A Z moving member 231 is held on the rotating member 233 via a bearing, and is movable in the Z axis direction. The Z moving member 231 can move in the Z axis direction by rotating a screw by a motor 232. The Z stage 23 is fitted to the Z moving member 231, and a pressure sensor 235 is provided therebetween. As the pressure sensor 235, for example, a piezoelectric element is used. When the needle contacts the Z stage 23, the pressure detected by the pressure sensor 235 changes, and the change is the contact pressure. Therefore, based on the pressure detected by the pressure sensor 235 when the needle is not in contact, the contact pressure is detected by a change from the pressure.

FIG. 7 is a diagram showing the hardware configuration of the stage movement control unit and the configuration of the drive unit according to the first embodiment.
As shown in the figure, the computer 61 reads the output of the pressure sensor 23, and also drives X, Y, and Z as drive sources of the X, Y, and Z moving mechanisms and the rotating mechanism, and the rotary motors 66 and
Driving signals are outputted to X, Y, Z for driving 7, 68, 69 and the rotary drivers 62, 63, 64, 65. The computer 61 has a correction value table 70.

FIG. 8 is a functional block diagram of the stage movement controller of the first embodiment. As illustrated, the stage movement control unit includes a contact position calculation unit 51, a correction value table 55, first and second correction registers 56 and 57, a pressure level determination unit 58, and a controller 59. ing. The contact position calculating means 51 determines, based on a movement amount signal instructed from the control unit of the entire prober or the tester, what position on the wafer the needle is going to contact with the center of the stage. Is calculated.
As described with reference to FIG. 4C, the amount of tilt of the stage due to the contact pressure is determined by the moment with respect to the center of rotation of the stage. The tilt amount of the stage can be calculated from the distance. The inclination causes a shift in the contact position, and it is considered that the components of the shift in the X-axis direction and the Y-axis direction should be corrected. Therefore, it is possible to calculate the correction amount by the calculation as described above. However, since the moving mechanism and the rotating mechanism are combined in many stages, it is difficult to accurately calculate the rotation center, and the actual device It is difficult to accurately calculate the correction amount because the accuracy of the correction is affected. Therefore, in the present embodiment, the inclination when the needle is brought into contact with a plurality of positions on the stage and the deviation of the contact position are measured in advance, and the correction value for canceling the deviation amount is made to correspond to the contact position in the correction value table 55. Is remembered. In addition, in this measurement, the deviation when the pressure becomes the first and second contact pressures is measured, and the correction value at that time is stored as the first and second correction values. Since two correction values are output from the correction value table 55 according to the contact position output from the contact position calculation means 51, the two correction values are stored in the first and second correction registers 56 and 57. The pressure level determining means 58 determines whether the detected contact pressure has reached two predetermined contact pressures in the above measurement. The controller 59 outputs a signal to each driver based on the movement amount signal, and outputs the first and second correction registers 56 and 57 and the pressure level determination unit 5.
Based on the determination result of 8, control is performed so as to perform correction.

FIG. 9 is a flowchart showing the correction processing of the stage movement control unit of the first embodiment. Step 8
In 01, the contact position is calculated from the instructed movement amount.
In step 802, a correction value corresponding to the contact position is read from the correction value table 55 and stored in the first and second correction value registers 56 and 57. In step 803, the stage is moved by the movement amounts specified in the X direction and the Y direction. As a result, the electrode pad of the semiconductor chip to be measured moves below the corresponding needle. In step 804, the stage is moved in the Z direction, that is, raised. In step 805, it is determined whether the pressure has reached the first contact pressure. This determination is indicated by whether the output of the pressure level determination means 58 has changed. Until the pressure reaches the first contact pressure, the movement in the Z direction is continued. When the pressure reaches the first contact pressure, X
It moves by the correction value stored in the first correction register 56 in the direction and the Y direction. Further, in step 807, it is determined whether the pressure has reached the second contact pressure. When the pressure reaches the second contact pressure, in step 808, the pressure is moved in the X direction and the Y direction by the correction value stored in the second correction register 57. Then, in step 809, it is determined whether or not the pressure has reached the third contact pressure (this is constant). When the pressure has reached the third contact pressure, the movement in the Z direction is stopped in step 810. . Thus, the measurement can be performed. The contact pressure at this time is a constant value, and the contact state is always stable.

FIG. 10 is a diagram showing the configuration of the stage according to the second embodiment of the present invention. The difference from the stage of the first embodiment shown in FIG. 6 is that piezoelectric elements 237 and 238 for changing the inclination of the rotary base 234 are provided. Note that these piezoelectric elements 237 and 238 are for changing the inclination in the plane of the paper, and are not shown, but two additional piezoelectric elements are provided in order to change the inclination in the plane perpendicular to the paper. ing.

FIG. 11 is a functional block diagram of the stage movement control unit of the second embodiment. As shown, the configuration is similar to the movement control unit of the first embodiment shown in FIG.
The difference is that the correction value stored in the correction table 85 is a correction value for correcting a change in the inclination of the stage when the needle is brought into contact. Also in this case, the inclination when the needle is brought into contact with a plurality of positions on the stage and the correction value for correcting the inclination are measured and stored in advance. In addition, the first and second correction values when the pressure is the first and second contact pressures are stored. The inclination control means 89 outputs the first and second correction values to the piezoelectric element driver 90 when the pressure level judgment means 88 indicates that the pressure has reached the first and second contact pressures. Thereby, the piezoelectric elements 237 and 2
The piezoelectric element 38 and the piezoelectric element in the other direction (not shown) expand and contract, and the tilt of the Z stage 23 is corrected.

By using the configuration of the second embodiment, it is possible to correct even when the upper surface of the Z stage 23 is inclined. FIG. 12 shows that the piezoelectric elements 237 and 238 expand and contract and Z
FIG. 9 is a diagram illustrating a state where the upper surface of the stage 23 is adjusted to be horizontal. FIG. 13 is a diagram illustrating a tilt correction operation in the second embodiment. As shown, the operation is the same as that of the first embodiment shown in FIG. 9 except that the correction value is a correction value of the inclination. At step 832, the inclination correction value is read, and at steps 836 and 838, the inclination of the Z stage 23 is changed.

FIG. 14 is a diagram showing the configuration of the stage according to the third embodiment of the present invention. The difference from the stage of the second embodiment shown in FIG. 12 is that the inclination adjusting mechanism can detect the inclination between the point where the motor 243 is used instead of the piezoelectric element and the member 5 to which the probe card 4 is attached. That is the point. The rotating member 234 includes a rotating shaft 246.
Can be rotated around the rotating member 2
Since the rim portion 245 of the 34 is instructed by the worm gear 244 that is rotated and displaced by the motor 243, the inclination of the rotating member 234, that is, the inclination of the Z stage 23 changes with the rotation of the motor 243. Note that the same tilt adjustment memory is provided for tilt adjustment in a plane perpendicular to the paper surface.

At the end of the upper surface of the Z stage 23, clearance sensors 241 and 242 for detecting the clearance with the surface of the member 5 are provided.
Is provided. Note that the clearance sensors 241 and 242
Are provided at an end of the upper surface of the Z stage 23 in either the X-axis direction or the Y-axis direction, and two clearance sensors are further provided in the other axis direction. By detecting the difference between the clearances detected by the clearance sensors 241 and 242, the relative inclination of the member 5 with respect to the Z stage 242 can be detected. The member 5 is provided with a portion serving as a reference for detecting a clearance. If the needle 4 and the probe card 3 are exactly at a predetermined inclination with respect to the member 5, for example, if the needle 4 and the probe card 3 are exactly parallel to the surface of the member 5, the clearance sensors 241 and 2
If the inclination adjusting mechanism is adjusted so that the clearance value detected by 42 becomes a predetermined value (the difference is zero), the needle 4 and the probe card 3 become parallel to the Z stage 242. If the needle 4 is exactly parallel to the probe card 3, but the probe card 3 is not always exactly parallel to the surface of the member 5, once the inclination of the probe card 3 with respect to the stage 23 is changed. The needle 4 is measured by measuring the inclination of the member 23 with respect to the stage 23 and adjusting the difference so that the value of the clearance detected by the clearance sensors 241 and 242 becomes the reference value. It becomes parallel to the stage 23. In this case, the probe card 3 is provided with a reference portion for detecting a clearance.

If only the change in the inclination of the needle with respect to the stage 23 due to the contact of the needle 4 is detected, the values of the clearances detected by the clearance sensors 241 and 242 before the contact of the needle 4 are used as reference values.
By calculating the difference from the reference value, the inclination due to the contact pressure can be detected. Therefore, if the inclination adjusting mechanism is adjusted so as to have this reference value, the relative inclination before the needle 4 is brought into contact can be maintained.

FIG. 15 is a flowchart showing a correction process of the stage tilt control unit of the third embodiment. In step 851, the needle 4 is moved to Z
It is determined whether or not the stage 23 is parallel to the stage 23. If not, a correction is made in step 852 so that the stage 23 is parallel to the stage 23. After adjusting so as to be parallel, in step 853, the stage is moved by the movement amount specified in the X direction and the Y direction.
Then, in step 854, the stage is moved in the Z direction. During this process, since the relative inclination changes due to the contact pressure, it is determined in step 855 whether or not they are parallel. If not, correction is made in step 856 so that they are parallel. If they are parallel, it is determined in step 857 whether the pressure has become equal to or higher than the third predetermined value, and steps 855 to 857 are repeated until the pressure becomes equal to or higher than the third predetermined value. When the pressure becomes equal to or higher than the third predetermined value, the movement in the Z-axis direction is stopped in step 858. Now, measurement can be performed.

[0033]

As described above, according to the first aspect of the present invention, the displacement of the contact position caused by the inclination of the stage due to the contact pressure of the needle is corrected, so that the displacement is eliminated. According to the second aspect of the present invention, the tilt is adjusted so as to cancel the tilt of the stage due to the contact pressure of the needle. Therefore, the needle and the wafer are held in parallel, and the contact position is shifted or the contact with the needle is caused. There is no pressure difference. Further, according to the third aspect of the present invention, the relative inclination of the stage with respect to the needle is detected, and the inclination of the stage is adjusted so that the stage is parallel to the needle. It is held, and there is no displacement of the contact position and no difference in contact pressure at the needle. Further, according to the fourth aspect of the present invention, since the contact pressure is detected and controlled to be constant, stable contact can be realized.

[Brief description of the drawings]

FIG. 1 is a diagram showing an arrangement of semiconductor chips on a semiconductor wafer and electrode pads of the semiconductor chips.

FIG. 2 is a diagram showing a basic configuration of a conventional prober.

FIG. 3 shows a stylus in multi-probing.
It is a figure which shows the example of arrangement | positioning.

FIG. 4 is a diagram for explaining a contact state of a needle with a wafer and a problem when the needle is tilted.

FIG. 5 is a diagram showing a basic configuration of a prober of the present invention.

FIG. 6 is a diagram showing a configuration of a stage according to the first embodiment of the present invention.

FIG. 7 is a diagram illustrating a hardware configuration of a movement control unit and a configuration of a driving unit according to the first embodiment of the present invention.

FIG. 8 is a block diagram of the movement control means according to the first embodiment of the present invention.

FIG. 9 is a flowchart showing the operation of the movement control means according to the first embodiment of the present invention.

FIG. 10 is a diagram showing a configuration of a stage according to a second embodiment of the present invention.

FIG. 11 is a block diagram of a movement control means according to a second embodiment of the present invention.

FIG. 12 is a diagram showing a state when the tilt is adjusted by the stage according to the second embodiment of the present invention.

FIG. 13 is a flowchart showing the operation of the movement control means according to the second embodiment of the present invention.

FIG. 14 is a diagram showing a configuration of a stage according to a third embodiment of the present invention.

FIG. 15 is a flowchart showing the operation of the movement control means according to the third embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Prober 2 ... Stage 3 ... Probe card 4 ... Stylus (needle) 5 ... Probe card mounting member 6 ... Tester 23 ... Z stage 51 ... Contact position calculation means 52 ... Correction amount calculation means 53 ... Movement control means 54 ... Stage Driving means 235: Pressure sensor 237, 238: Piezoelectric element 241, 242: Clearance sensor

Claims (24)

[Claims] A wafer (100) having a plurality of semiconductor chips (110) arranged thereon is mounted on a stage (2), and a stylus (4) is placed on an electrode pad (12) of each semiconductor chip (110).
A probing method for sequentially contacting the stylus (4) with the stylus (4) on the stage (2) based on chip instruction information indicating a semiconductor chip (110) to be brought into contact with the stylus (4). Calculating a contact position on the wafer (100) with the stylus (4) at the contact position on the wafer (100).
Calculating a predicted amount of a change in the inclination of the stage (2) when the stage is brought into contact with, and calculating a correction amount for correcting a change in the contact position caused by the predicted amount of the change in the tilt; A step of moving the stage (2) relative to the stylus (4) based on the above method. 2. The probing method according to claim 1, wherein the step of moving the stage (2) relative to the stylus (4) includes: 120) to Z
Moving the stage (2) with respect to the stylus (4) so that the stylus (4) comes into contact with the electrode pad (120); A probing method comprising: a relative movement in the axial direction; and a relative movement of the stage (2) by the correction amount with respect to the stylus (4) during the relative movement in the Z-axis direction. . 3. The probing method according to claim 2, wherein the stage (2) is moved before the step of moving the stage (2) relative to the stylus (4) by the correction amount. Detecting a change in pressure applied to the
A probing method for performing the step of moving the stage (2) relative to the stylus (4) by the correction amount when the pressure reaches a first predetermined value. 4. The probing method according to claim 3, wherein after the step of moving the stage (2) relative to the stylus (4) by the correction amount, the stage (2) is moved to the stage (2). Detecting a change in the applied pressure,
A probing method for ending the step of moving the stage (2) relative to the stylus (4) in the Z-axis direction when the pressure reaches a second predetermined value. 5. A wafer (100) having a plurality of semiconductor chips (110) arranged thereon is placed on a stage (2), and a stylus (4) is placed on an electrode pad (12) of each semiconductor chip (110).
A probing method for sequentially contacting the stylus (4) with the stylus (4) on the stage (2) based on chip instruction information indicating a semiconductor chip (110) to be brought into contact with the stylus (4). Calculating a contact position on the wafer (100) with the stylus (4) at the contact position on the wafer (100).
Calculating a predicted amount of a change in the inclination of the stage (2) when the stage (2) is brought into contact with, and calculating a correction amount for correcting the predicted amount of the change in the inclination; 2) changing a relative angle with respect to the stylus (4). 6. The probing method according to claim 5, wherein after the step of calculating the correction amount, the stylus (4) moves the Z with respect to the electrode pad (120).
Moving the stage (2) with respect to the stylus (4) so that the stylus (4) comes into contact with the electrode pad (120); And a step of changing the relative angle of the stage (2) with respect to the stylus (4) during the step of relatively moving in the Z-axis direction. 7. The probing method according to claim 6, wherein the step (2) is applied to the stage (2) before the step of changing a relative angle of the stage (2) with respect to the stylus (4). A probing method comprising: detecting a change in pressure; and performing the step of changing a relative angle of the stage (2) with respect to the stylus (4) when the pressure reaches a first predetermined value. 8. The probing method according to claim 6, wherein the stage is moved in the Z-axis direction relative to the stylus (4) with respect to the stylus (4). Detecting a change in pressure applied to (2),
A probing method for ending the step of moving the stage (2) relative to the stylus (4) in the Z-axis direction when the pressure reaches a second predetermined value. 9. A wafer (100) having a plurality of semiconductor chips (110) arranged thereon is placed on a stage (2), and a stylus (4) is placed on an electrode pad (12) of each semiconductor chip (110).
0) a probing method for sequentially bringing the stage (2) into contact with the stylus (4), wherein the relative inclination of the stage (2) with respect to the stylus (4) is detected; Changing the relative angle of the stage (2) with respect to the stylus (4) so as to obtain the probing method. 10. The probing method according to claim 9, wherein after the step of calculating the correction amount, the stylus (4) moves the Z with respect to the electrode pad (120).
Moving the stage (2) with respect to the stylus (4) so that the stylus (4) comes into contact with the electrode pad (120); And a step of changing the relative angle of the stage (2) with respect to the stylus (4) during the step of relatively moving in the Z-axis direction. 11. The probing method according to claim 10, wherein the stage (2) is relatively moved in the Z-axis direction with respect to the stylus (4). ) Detecting a change in pressure applied to
A probing method for terminating the step of moving the stage (2) relative to the stylus (4) in the Z-axis direction when the pressure reaches a predetermined value. 12. A wafer (100) having a plurality of semiconductor chips (110) arranged thereon is placed on a stage (2), and a stylus (4) is placed on an electrode pad (1) of each semiconductor chip (110).
20) A probing method for sequentially contacting the electrode pads (120) with the electrode pads (120).
Moving the stage (2) with respect to the stylus (4) so that the stylus (4) comes into contact with the electrode pad (120); A step of relatively moving in the axial direction; and a step of detecting a change in the pressure applied to the stage (2) during the step of relatively moving in the Z-axis direction, wherein the pressure becomes a predetermined value. A probing method that ends the step of moving the stage (2) relative to the stylus (4) in the Z-axis direction at times. 13. A wafer (100) having a plurality of semiconductor chips (110) arranged thereon is mounted on a stage (2), and a stylus (4) is placed on an electrode pad (1) of each semiconductor chip (110).
20) a prober for sequentially contacting the stylus (4) on the stage (2) based on chip instruction information indicating a semiconductor chip (110) to be brought into contact with the stylus (4). Contact position calculating means (51) for calculating a contact position on the wafer (100);
Correction amount calculating means (52) for calculating a predicted amount of change in the inclination of the stage (2) when the stage (2) is brought into contact, and calculating a correction amount for correcting the change in the contact position caused by the predicted amount of the change in inclination. The stage (2) so that the stylus (4) contacts the electrode pad (120) of the semiconductor chip (110) specified by the chip instruction information.
And a movement control means (53) for controlling the stage (2) to move relative to the stylus (4) by the correction amount. And a prober. 14. The prober according to claim 13, wherein the movement control unit (53) is configured to position the stylus (4) above the electrode pad (120) in the Z-axis direction. Then, the stage (2) is moved relative to the stylus (4) in the Z-axis direction so that the stylus (4) comes into contact with the electrode pad (120).
A prober that controls the stage (2) to move relative to the stylus (4) by the correction amount during the relative movement in the axial direction. 15. The prober according to claim 14, further comprising a sensor (235) for detecting a change in pressure applied to the stage (2), wherein the movement control means (53) includes a sensor (235). The output of the sensor (235) is read during the movement of the stylus (2) relative to the stylus (4) in the Z-axis direction, and when the pressure reaches a first predetermined value, the stage (2) And a prober for controlling relative movement with respect to the stylus (4) by the correction amount. 16. The prober according to claim 15, wherein the movement control means (53) controls the stage (2) to move relative to the stylus (4) by the correction amount. Then, when the pressure reaches a second predetermined value,
A prober for controlling the relative movement of the stage (2) with respect to the stylus (4) in the Z-axis direction to be stopped. 17. A wafer (100) having a plurality of semiconductor chips (110) arranged thereon is mounted on a stage (2), and a stylus (4) is placed on an electrode pad (1) of each semiconductor chip (110).
20) a prober for sequentially bringing the stage (2) into contact with the stylus (4), the movement control means (60) controlling relative movement of the stage (2) with respect to the stylus (4); Based on tilt adjusting means (237, 238) for adjusting the tilt, and chip instruction information for instructing the semiconductor chip (110) to be brought into contact with the stylus (4), the stylus ( 4) a contact position calculating means (61) for calculating a contact position on the wafer (100); and
A correction amount calculating means (65) for calculating a predicted amount of change in inclination of the stage (2) when the stage is brought into contact with, and calculating a correction amount for correcting the predicted amount of change in tilt; Based on the inclination adjusting means (237, 2
38. A prober comprising: a tilt control means (69) for changing (38). 18. The prober according to claim 17, wherein the movement control means (60) is arranged so that the stylus (4) is located above the electrode pad (120) in the Z-axis direction. And the stylus (4) moves to the electrode pad (12).
0), and the tilt control means (69) moves the stage (2) while the stage (2) is relatively moving in the Z-axis direction with respect to the stylus (4). A prober for changing a relative angle with respect to the stylus (4). 19. The prober according to claim 18, further comprising a sensor (235) for detecting a change in pressure applied to the stage (2), wherein the tilt control means includes a stage (2). During the relative movement in the Z-axis direction with respect to the stylus (4), the output of the sensor (235) is read, and
A prober for changing the inclination adjusting means (237, 238) based on the correction amount when the predetermined value is reached. 20. The prober according to claim 19, wherein the movement control means (60) moves the stage (2) relative to the stylus (4) in the Z-axis direction. A prober that stops the relative movement of the stage (2) in the Z-axis direction with respect to the stylus (4) when the pressure detected by the sensor (235) reaches a second predetermined value during control. 21. A wafer (100) having a plurality of semiconductor chips (110) arranged thereon is placed on a stage (2), and a stylus (4) is placed on an electrode pad (1) of each semiconductor chip (110).
A prober for sequentially contacting the stage (2) with the probe (4), the inclination detecting means (241, 242) for detecting the inclination of the stage (2) with respect to the stylus (4), A tilt adjusting means (237, 238) for changing the tilt with respect to a tilt angle; and a tilt control means (69) for controlling the tilt adjusting means (237, 238), wherein the tilt control means (69) includes the tilt detecting means. (24
A prober for controlling the stage (2) to be parallel to the stylus (4) based on the detection result of (1, 242). 22. The prober according to claim 21, wherein the movement control means (60) is such that the stylus (4) is located above the electrode pad (120) in the Z-axis direction. And the stylus (4) moves to the electrode pad (12).
0), and the tilt control means (69) moves the stage (2) while the stage (2) is relatively moving in the Z-axis direction with respect to the stylus (4). A prober for controlling the probe so as to be parallel to the stylus (4). 23. The prober according to claim 21, further comprising a sensor (235) for detecting a change in pressure applied to the stage (2), wherein the movement control means (60) When the pressure detected by the sensor (235) reaches a predetermined value during the control to move the stage (2) relative to the stylus (4) in the Z-axis direction, the stage (2) A) a prober for stopping the relative movement in the Z-axis direction with respect to the stylus (4). 24. A wafer (100) having a plurality of semiconductor chips (110) arranged thereon is mounted on a stage (2), and a stylus (4) is placed on an electrode pad (1) of each semiconductor chip (110).
20) a prober for sequentially contacting the stage (2), a movement control means (60) for controlling a relative movement of the stage (2) with respect to the stylus (4), and a change in pressure applied to the stage (2). The movement control means (60), wherein the stylus (4) has a Z with respect to the electrode pad (120).
After moving so as to be located axially above, the stylus (4) comes into contact with the electrode pad (120),
The stage (2) is moved relative to the stylus (4) in the Z-axis direction, and when the pressure detected by the sensor (235) reaches a predetermined value, the touch of the stage (2) is reduced. A prober which controls so as to stop the relative movement in the Z-axis direction with respect to a needle (4).