JP2006186130A - Semiconductor test device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve an accuracy on the positioning of a semiconductor wafer and a probe to the variation of the height of a wafer stage after getting to a set temperature, and to obtain the pushed quantity of the probe and the load of the probe. <P>SOLUTION: The semiconductor wafer 3 is adjusted by a stage-temperature regulator 5 for test with the set temperature, and the set temperature is detected by a temperature sensor 5'. The front tip of the probe 2 is detected by a microscope 6a fitted to a wafer stage 4. The wafer stage 4 is moved in the Z-axial direction towards the probe 2, and a height H between the tip of the probe 2 and the semiconductor wafer 3 are measured while watching a focusing state by the microscope 6a. A control section controls the wafer stage 4 so as to satisfy enough pushing power between the tip of the probe 2 and an electrode pad for the semiconductor wafer 3 on the basis of the measurement and a predetermined value. The probe 2 and the electrode pad are brought to a contact state, and the semiconductor wafer is tested. The variation Δh of the wafer stage 4 generated after setting a temperature is obtained by non-contact measuring instruments 6b and 6c, and a value H at the beginning of the measurement is corrected. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor inspection apparatus that incorporates temperature control for improving positioning accuracy on a semiconductor wafer on a wafer stage in order to inspect a semiconductor device.

  In a conventional semiconductor device manufacturing process, a semiconductor inspection apparatus applies a test signal from a semiconductor device tester by pressing a probe needle against the electrode pads of a number of semiconductor devices formed in a manufactured semiconductor wafer. An output signal from the device is detected, and a device that does not operate normally is separated as a failure. A prober apparatus is used for this inspection, and a semiconductor device formed in a semiconductor wafer is inspected by determining electrical characteristics at a high temperature or a low temperature by the prober apparatus.

  FIG. 3 is a diagram showing a schematic configuration of the prober apparatus. In FIG. 3, 1 is a probe card, 2 is a probe needle, 3 is a semiconductor wafer, 4 is a wafer stage, 5 is a stage temperature regulator, and 5 'is a temperature sensor. As shown in FIG. 3, the probe needle 2 attached to the probe card 1 is pressed against the semiconductor wafer 3 on which the semiconductor device is formed by the vertical movement of the wafer stage 4, and electrical inspection is performed. The high temperature and low temperature setting control is performed by a stage temperature adjuster 5 and a temperature sensor 5 ′ installed in the wafer stage 4.

  This prober apparatus holds a semiconductor wafer 3 by, for example, vacuum suction or the like on a wafer stage 4, and includes a probe needle 2 corresponding to an electrode pad of a semiconductor device above the wafer stage 4 that holds the semiconductor wafer 3. The probe card 1 is fixed. The alignment between the semiconductor wafer 3 and the probe needle 2 is detected by a measuring instrument (not shown) installed in the prober apparatus (hereinafter referred to as a calibration operation), and a drive mechanism (not shown). The wafer stage 4 is moved in the X, Y, and θ directions by the above, and the wafer stage 4 is moved up in the Z-axis direction (hereinafter referred to as contact operation), whereby the semiconductor wafer 3 held on the wafer stage 4 is moved. The probe needle 2 is pressed against the electrode pad of the semiconductor device, and the electrical inspection is performed by the tester through the probe needle 2.

  By the way, the prober apparatus uses a stage temperature regulator 5 and a temperature sensor 5 ′ in the wafer stage 4 in order to inspect a semiconductor device at a high temperature or a low temperature. In order to correspond to the conditions for measuring the semiconductor device at the set temperature, the conventional prober apparatus does not start the above-described calibration operation until the set temperature is reached. For example, when the temperature is set to rise 60 ° C. from room temperature, the temperature reaches the set temperature in about 3 minutes, and the calibration operation is performed in about 2 minutes immediately after reaching the set temperature condition. It is a mechanism to start inspection.

  In Patent Document 1, in order to compensate the temperature detection of the temperature sensor normally installed on the wafer stage, a non-contact temperature sensor is added as a temperature detection function, thereby improving the device reliability. It is stated.

Further, in Patent Document 2, in the conventional prober apparatus, the wafer stage is moved in the Z-axis direction, which is the height at which the contact operation of pressing the probe tip and the electrode pad is performed from the height of the wafer stage during the calibration operation. In this case, the probe tip of the probe needle is caused by a slight positioning error in the rotation direction and the XY axis direction on the semiconductor wafer due to the influence of a slight twist or tilt accompanying the movement of the wafer stage in the Z-axis direction. By performing the calibration operation at this height, it is possible to eliminate a slight misalignment of the wafer stage position factor at the time of performing the calibration operation. Note that this slight misalignment includes temperature factors. Conventionally, countermeasures for high-temperature and low-temperature inspections have been taken by the above method.
JP-A-5-63041 Japanese Patent Laid-Open No. 2004-39752

  In the conventional technology, the calibration operation is not started until the set temperature is reached, but the calibration operation is performed immediately after detecting that the set temperature has been reached, and information on the probe tip position obtained by the calibration operation is obtained. Then, the contact operation is performed based on the information on the electrode pad position, and the inspection is started at the set temperature.

  However, as shown in FIG. 4, for example, when the amount of change Δh of the wafer stage height set to 85 ° C. is measured, it takes only 3 minutes to reach the set temperature in the temperature sensor. The height of the wafer stage is increased by about 50 μm. Further, after another hour, the temperature rises by about 10 μm and the thermal expansion and contraction is almost saturated.

  Here, assuming that the inspection is started based on the information on the probe tip position of the probe needle and the information on the electrode pad position obtained in the calibration operation immediately after reaching the temperature set to 85 ° C., FIG. As shown, since the height of the wafer stage rises with time, the amount of pressing between the probe needle and the electrode pad increases. As shown in FIG. 5, the length of the needle trace by the probe needle for each number of inspection units viewed in time series immediately after the start of the inspection of the semiconductor wafer is due to the increase in the pressing amount between the probe needle and the electrode pad. The length will increase with a needle trace of about 0.2 μm per minute.

  For example, the probe trace of a 40 μm probe needle at the start of measurement of a semiconductor wafer becomes a needle trace length of about 50 μm after 50 minutes. Normally, the standard deviation σ of the probe needle trace is about 3 to 5 μm, and if the pad design assumes the needle trace size, this amount of change is so large that it cannot be ignored. Further, as the probe needle trace becomes longer, the load on the probe needle increases.

  Problems that occur when this probe needle mark becomes long include, for example, that the probe tip of the probe needle comes off from the electrode pad and hits the edge of the electrode pad, and the protective film is broken, and the probe needle mark becomes longer than necessary. As a result, the area of the needle trace becomes large and it becomes impossible to secure a bonding area at the time of assembly, or the probe needle load becomes large and a crack is generated in the interlayer film provided under the electrode pad.

  In order to cope with such a problem, after the inspection of the semiconductor wafer is started, a plurality of inspection units (at least one semiconductor chip unit) of the semiconductor wafer after the inspection of the semiconductor wafer is started. Although it can be easily estimated that the calibration operation is performed once, if the variation of the probe mark of the probe needle is set to be 4 μ, the required time is about once every about 20 minutes and about 2 minutes. This calibration operation requires resetting the height of the wafer stage, resulting in a problem that the inspection efficiency of the semiconductor wafer is lowered.

  Assuming that the inspection time of the semiconductor wafer is set to 1 minute, since the needle traces of the probe needles of about 0.2 μm are long even during the inspection performing the contact operation from FIG. In the contact operation between the probe tip of the probe needle and the electrode pad in order to perform the inspection, there is a problem that the conventional method cannot cope with the trouble with respect to the probe trace of the probe needle accompanying the expansion and contraction of the wafer stage.

  The present invention is directed to solving the problems of the prior art, and improves the positioning accuracy of the semiconductor wafer and the probe needle with respect to the height change amount of the wafer stage after reaching the set temperature. Another object of the present invention is to provide a semiconductor inspection apparatus capable of obtaining a pressing amount and a needle load on a needle tip of a fixed probe needle.

  In order to achieve the above object, a semiconductor inspection apparatus according to claim 1 of the present invention provides a semiconductor wafer and a probe when inspecting the electrical characteristics of one or more semiconductor devices formed on the semiconductor wafer. A semiconductor inspection apparatus having positioning means for determining the position of a probe needle tip of a card, pressing means for pressing the probe needle against an electrode pad of a semiconductor device, and inspection means for inspecting at a set temperature of high temperature or low temperature The temperature stage for setting the temperature of the wafer stage on which the semiconductor wafer is mounted is set by the temperature controller, and the height position between the surface of the semiconductor wafer and the tip of the probe needle is detected by the temperature sensor. A recognizing means for recognizing, a measuring means for measuring a height change amount of the wafer stage during the inspection of the semiconductor wafer after reaching the set temperature, Control means for correcting the amount of change so that the amount of pressing of the wafer stage that satisfies the pre-stored pressing amount of the pressing unit from the result of the detecting unit becomes the pressing amount. Semiconductor inspection equipment.

  The semiconductor inspection apparatus according to any one of claims 2 to 5 is the semiconductor inspection apparatus according to claim 1, wherein the measuring means is accompanied by expansion or contraction of the wafer stage that occurs even after reaching the set temperature of the wafer stage. Measure the height of the semiconductor wafer on the wafer stage at at least one location, or change the amount of variation accompanying expansion or contraction of the wafer stage that occurs even after reaching the set temperature of the wafer stage at multiple locations. The height position of the semiconductor wafer on the wafer stage is measured and obtained by a smoothed value, or the amount of change accompanying expansion or contraction of the wafer stage that occurs even after reaching the set temperature of the wafer stage is at least 1 Measure the height of the wafer stage at a point, or after reaching the set temperature of the wafer stage The variation with expansion or contraction also occurs wafer stages Oite measures the height position of the wafer stage at four points, and obtaining the smoothed value.

  The semiconductor inspection apparatus according to any one of claims 6 to 9 is the semiconductor inspection apparatus according to any one of claims 1 to 5, wherein the measuring means is a means for measuring the height change amount of the wafer stage in a non-contact manner. And means for measuring the height using a focus by an image recognition device, or means for measuring the height using a laser displacement meter, and further, expansion or contraction of the wafer stage that occurs even after reaching the set temperature of the wafer stage The result of the recognition means for recognizing the height position of at least one point near the tip of the probe needle by obtaining the temperature variation in the wafer stage surface, the flatness of the wafer stage, and the height change accompanying the tilt as the amount of change accompanying During the semiconductor wafer inspection, the control means corrects the amount of change for the amount of lift of the wafer stage that satisfies the pre-stored pressing amount from In addition, the height change amount of the wafer stage is measured at the time of movement of each semiconductor unit in units of at least one semiconductor chip of the semiconductor wafer, or the height change amount of the wafer stage is measured. Is performed during the inspection for each inspection unit in units of at least one semiconductor chip of the semiconductor wafer, and the height change amount of the wafer stage is corrected even during the inspection of the semiconductor chip.

  A semiconductor inspection apparatus according to a tenth aspect is the semiconductor inspection apparatus according to any one of the first to ninth aspects, wherein the position of the wafer stage that moves up and down based on the amount of change in height measured by the measuring means is determined. The wafer stage is equipped with a movement detecting means that detects using a contact sensor, and corrects the amount of pressing between the probe needle and the electrode pad according to the amount of height change that occurs even after reaching the set temperature of the wafer stage. The vertical movement is controlled by detecting the position.

  According to the above configuration, after the temperature sensor detects that the wafer stage has reached the temperature set using the temperature controller, it is stored in advance by the operation of recognizing the height position between the probe tip and the semiconductor wafer surface. The amount of change in the height of the wafer stage, which expands and contracts even after reaching the set temperature, is measured in a non-contact manner during the inspection of the semiconductor wafer so that the pressed amount between the probe needle and the electrode pad is reached. The amount of change in the height of the wafer stage after reaching the set temperature is controlled by correcting the amount of elevation of the wafer stage so that the probe needle tip is always set to the pressing amount. The height of the wafer stage that performs the contact operation is corrected to the height of the electrode pad, and the pressing amount of the electrode pad against the tip of the probe needle can be made constant.

  In addition, during the contact operation and inspection, the amount of change in the wafer stage can be measured to automatically correct the rising amount of the wafer stage, eliminating the need for calibration operation time to correct the height of the wafer stage, and moving the wafer stage up and down. The position information in the Z-axis direction of the motor control to be operated can be obtained by reducing the influence of temperature change with a non-contact measuring device, the height position of the wafer stage can be detected, and high-precision positioning control can be performed.

  According to the present invention, the prober apparatus of the semiconductor inspection apparatus improves the positioning accuracy of the prober apparatus against the height change amount of the wafer stage after reaching the set temperature, and pushes it to the tip of a certain probe needle. Able to obtain contact amount and needle load, avoid troubles caused by inspection of temperature-adjusted semiconductor wafers, and periodically calibrate the probe needle tip and semiconductor wafer height position separately. Automatic correction can be performed, the operation rate of the prober device can be improved, the accuracy can be improved, the volume of the wafer stage can be increased by increasing the diameter, and the temperature variation in the semiconductor wafer surface can also be handled. Play.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 shows a prober apparatus as a semiconductor inspection apparatus according to an embodiment of the present invention, in which a probe is brought into contact with a semiconductor device to be inspected formed on a semiconductor wafer and electrically connected to the inspection apparatus for inspection. It is sectional drawing which shows schematic structure of these. Here, components having equivalent functions corresponding to the components described in FIG. 3 showing the conventional example are denoted by the same reference numerals.

  As shown in FIG. 1, the wafer stage 4 of the prober apparatus has an XY stage that can move freely in an XY axis direction (not shown), and an X axis motor and a Y axis that are driven in an X axis direction (not shown). The XY stage is positioned by being rotationally driven by a Y-axis motor driven in the direction. Further, the wafer stage 4 is driven up and down in the Z-axis direction by a motor (not shown) and is also driven in the rotation direction (θ direction).

  Therefore, the semiconductor wafer 3 on the wafer stage 4 is movable with respect to the probe card 1 in the XY axis direction, the Z axis direction, and the θ direction. Further, on the upper surface of the wafer stage 4, for example, a suction groove communicating with a vacuum source is formed as means (not shown) for fixing and holding the semiconductor wafer 3, so that the semiconductor wafer 3 can be vacuum-sucked. Yes.

  A probe card 1 having a probe needle 2 is mounted on the upper part of the wafer stage 4. The probe card 1 has a plurality of electrodes electrically connected to a test head (not shown) on the upper surface side, and a plurality of probe needles 2 connected to each of the plurality of electrodes on the lower surface side. . The plurality of probe needles 2 are provided corresponding to the arrangement of the plurality of electrode pads on at least one semiconductor device (not shown) on the semiconductor wafer 3. Thereby, the electrical characteristics of the semiconductor device can be inspected.

  When the semiconductor device on the semiconductor wafer 3 is inspected for electrical characteristics by the prober device under a high temperature or low temperature condition, the temperature set by the stage temperature adjuster 5 provided on the wafer stage 4 of the semiconductor wafer 3 is set. Adjusted to The temperature sensor 5 'detects that the set temperature has been reached.

  Next, the calibration operation of the inspection apparatus is performed. As shown in FIG. 1, the position of the probe needle 2 is positioned adjacent to the wafer stage 4 on the wafer stage 4 mounted with the semiconductor wafer 3 and moving up and down. The microscope 6a of the desired optical device is attached. With the microscope 6a, the tip of the probe needle 2 is imaged from below and the position of the tip of the probe needle 2 is detected. On the other hand, by moving the wafer stage 4 in the Z-axis direction toward the probe needle 2, the microscope 6 a moves up and down, and the distance between the probe tip of the probe needle 2 and the semiconductor wafer 3 while observing the in-focus state. Measure height H. The measured numerical results are input to a control unit (not shown). The control unit controls the wafer stage 4 based on the measurement result and the value stored in advance so as to satisfy the pressing amount between the probe tip of the probe needle 2 and the electrode pad on the surface of the semiconductor wafer 3.

  Thereafter, the movement of the wafer stage 4 with respect to the probe needle 2 causes the probe needle 2 and the electrode pad to be in contact with each other by positioning in the XY-axis direction and vertical movement of the contact operation in the Z-axis direction, and the semiconductor wafer 3 is inspected. .

  Before and after the vertical movement of the wafer stage 4 in the above inspection, the amount of change Δh of the wafer stage 4 caused by expansion / contraction after temperature setting is measured by the non-contact measuring device 6b or measuring device 6c using the optical device shown in FIG. The control unit corrects the height change Δh of the wafer stage 4 due to expansion and contraction as shown in FIG. It should be noted that the time required for measurement is 0.1 seconds or less, has little influence on the measurement of a general semiconductor device, and is greatly shortened compared with the conventional calibration operation.

  In addition, when calculating | requiring the amount of height change of the wafer stage 4 which correct | amends with a control part, the height position is measured using the measuring devices 6b and 6c shown in FIG. One or more arbitrary locations on the semiconductor wafer 3 on the wafer stage 4, for example, five corners of the semiconductor wafer 3 by the measuring device 6c and the central portion by the measuring device 6b, or one or more arbitrary locations on the wafer stage 4 Measure. Here, when the measurement values at a plurality of locations are obtained, for example, values obtained by smoothing the values at the four corners of the wafer stage 4 are used. Furthermore, although the position where the amount of change in height is measured is on the wafer stage 4 and the semiconductor wafer 3, the measurement position may be on a semiconductor device or an electrode pad.

  In addition, the measuring devices 6b and 6c in the present embodiment are devices that perform height measurement using a focus by an image recognition device as a non-contact optical device that measures the height change amount of the wafer stage 4, or laser displacement. A device for measuring the height with a meter can be used. Moreover, although the value measured and calculated | required with the measuring device was demonstrated as height variation | change_quantity, it is the same also if the measured value is made into the absolute value of height.

  Next, a function for performing temperature correction of the prober apparatus in the present embodiment will be described. The measuring device 6c shown in FIG. 1 measures the flatness of the wafer stage 4 and the height change associated with the inclination during the measurement by electrical connection of at least one of the semiconductor devices to be inspected and the probe needle 2, and further the semiconductor wafer. As a temperature change amount in the plane on which 3 is mounted, a slight difference in temperature distribution of the wafer stage 4 is obtained by a plurality of temperature sensors 5 'arranged. In addition, the microscope 6a recognizes a plurality of probes near the probe needle 2 of the probe card 1 to determine the inclination of the probe card 1.

  As described above, the contact on which the wafer stage 4 rises after positioning in the XY-axis direction with the prober device from the difference in temperature distribution of the wafer stage 4 and the height change Δh on the semiconductor device itself or the semiconductor wafer 3 to be measured. In the contact state due to the operation, the numerical value of the measured change amount Δh is input to the control unit, and the amount of increase caused by the contact operation of the wafer stage 4 is corrected. Thereby, it can be set as the fixed pressing amount between the needle tip of the probe needle 2 and the electrode pad more accurately.

  Further, by providing a plurality of stage temperature adjusters 5 that set the wafer stage 4 to a set temperature together with a plurality of temperature sensors 5 ′, the diameter of the wafer stage 4 can be increased, and temperature variations in the surface of the semiconductor wafer 3 can be achieved. The volume of the inspection object can be increased.

  The contact operation of the prober apparatus in the present embodiment will be described. The normal operation is that the wafer stage 4 is in contact with the probe needle 2 by the contact operation by the positioning in the XY axis direction and the vertical movement in the Z axis direction and the inspection is performed. The measurement of the amount of change is performed when the wafer stage 4 is moved in the inspection for each semiconductor chip on the semiconductor wafer 3 or during the inspection for each semiconductor chip, so that the periodic probe needle 2 and the semiconductor pad can be measured. It is not necessary to measure the amount of change in height for obtaining the contact state as a new operation, and it is possible to automatically perform correction processing, thereby improving the operating rate.

  In the present embodiment, as shown in FIG. 1, the height change amount of the wafer stage 4 is corrected in the contact operation described above. Conventionally, a motor control device that moves the wafer stage 4 up and down operates based on position information that moves up and down in the Z-axis direction. However, in a motor control device that moves the wafer stage 4 up and down, the motor control device moves up and down in the Z-axis direction. Position information, the mechanical operation itself has a variation of several μm.

  In the present embodiment, a non-contact measuring device is attached to the wafer stage 4 and, for example, a Z-axis movement amount sensor 7 such as a magnescale is used. With this configuration, the wafer stage 4 can be driven and positioned in the Z-axis direction with high accuracy based on the measured position information, and the Z-axis fineness of the wafer stage 4 can be reduced. A small amount of correction can be performed accurately.

  The semiconductor inspection apparatus according to the present invention improves the positioning accuracy with respect to the height change amount of the wafer stage after reaching the set temperature, and obtains a pressing amount and a needle load on a constant probe needle tip. It is possible to avoid troubles caused by inspection of temperature-set semiconductor wafers, and to perform automatic correction without performing a separate calibration operation of the height of the probe needle tip and the semiconductor wafer periodically. Therefore, it is useful for semiconductor inspection incorporating temperature control for improving positioning accuracy with respect to a semiconductor wafer on a wafer stage in order to inspect a semiconductor device.

Sectional drawing which shows schematic structure of the prober apparatus which is a semiconductor inspection apparatus in embodiment of this invention The figure explaining the amount of change Δh of the wafer stage accompanying expansion and contraction in the present embodiment The figure which shows the structure of the outline of the conventional prober apparatus Diagram showing characteristics of wafer stage height change Δh and time The figure which shows the characteristic of the length of the needle mark by the probe needle for every number of inspection units seen in time series immediately after the inspection start of the semiconductor wafer

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Probe card 2 Probe needle 3 Semiconductor wafer 4 Wafer stage 5 Stage temperature adjuster 5 'Temperature sensor 6a Microscope 6b, 6c Measuring instrument 7 Z-axis movement amount sensor

Claims (10)

When inspecting the electrical characteristics of the semiconductor device or semiconductor devices formed on the semiconductor wafer, positioning means for determining the positions of the probe needle tips of the semiconductor wafer and the probe card, and the probe needle as an electrode pad of the semiconductor device A semiconductor inspection apparatus having pressing means for pressing and inspection means for performing the inspection at a set temperature of high temperature or low temperature,
The wafer stage on which the semiconductor wafer is mounted is set as the set temperature by a temperature controller, temperature means for detecting that the set temperature has been reached by a temperature sensor, and the height between the semiconductor wafer surface and the probe needle tip Recognizing means for recognizing the position, measuring means for measuring the amount of change in height of the wafer stage during inspection of the semiconductor wafer after reaching the set temperature, and pre-stored in the pushing means from the result of the recognizing means A semiconductor inspection apparatus, comprising: a control unit that corrects the amount of change such that the amount of pressing of the wafer stage that satisfies the amount of pressing is equal to the amount of pressing.   The measuring means obtains the amount of change accompanying expansion or contraction of the wafer stage that occurs even after reaching the set temperature of the wafer stage by measuring the height position of the semiconductor wafer on the wafer stage at at least one location. The semiconductor inspection apparatus according to claim 1.   The measurement means measures and smoothes the amount of change accompanying expansion or contraction of the wafer stage that occurs even after reaching the set temperature of the wafer stage, by measuring the height position of the semiconductor wafer on the wafer stage at a plurality of locations. 2. The semiconductor inspection apparatus according to claim 1, wherein the semiconductor inspection apparatus is obtained by a value.   The measuring means obtains an amount of change accompanying expansion or contraction of the wafer stage that occurs even after reaching a set temperature of the wafer stage by measuring the height position of the wafer stage at at least one location. The semiconductor inspection apparatus according to claim 1.   The measuring means obtains the amount of change accompanying expansion or contraction of the wafer stage that occurs even after reaching the set temperature of the wafer stage, by measuring the height position of the wafer stage at four locations and obtaining a smoothed value. The semiconductor inspection apparatus according to claim 1.   The measurement means is a means for measuring the height change amount of the wafer stage in a non-contact manner, and includes a height measurement means using a focus by an image recognition device or a height measurement means by a laser displacement meter. The semiconductor inspection apparatus according to claim 1, wherein:   The measuring means is the amount of change accompanying expansion or contraction of the wafer stage that occurs even after reaching the set temperature of the wafer stage, temperature variation within the wafer stage surface, flatness of the wafer stage, and height associated with the inclination. A control means is provided for a rise amount of the wafer stage that satisfies a pre-stored pressing amount from a result obtained by a recognition means that obtains a change and recognizes a height position of at least one point near the tip of the probe needle. The semiconductor inspection apparatus according to claim 1, wherein control is performed during a semiconductor wafer inspection so that the change amount is corrected and the pressing amount is obtained.   8. The measurement device according to claim 1, wherein the measurement unit measures the height change amount of the wafer stage at the time of movement for each inspection unit in units of at least one semiconductor chip of the semiconductor wafer. The semiconductor inspection apparatus as described.   The measuring means measures the height change amount of the wafer stage during the inspection for each inspection unit in units of at least one semiconductor chip of the semiconductor wafer, and the wafer stage even during the inspection of the semiconductor chips The semiconductor inspection apparatus according to claim 1, wherein an amount of change in height is corrected. A movement detecting means for detecting, using a non-contact sensor, a position of the wafer stage that moves up and down based on a height change amount measured by the measuring means;
The position of the wafer stage is detected and the vertical movement is controlled in order to correct the amount of pressing between the probe needle and the electrode pad based on the amount of change in height that occurs even after reaching the set temperature of the wafer stage. The semiconductor inspection apparatus according to claim 1, wherein

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