JP2006310851A - 窒化物層の製造方法及びこれを用いた垂直構造窒化物半導体発光素子の製造方法 - Google Patents
窒化物層の製造方法及びこれを用いた垂直構造窒化物半導体発光素子の製造方法 Download PDFInfo
- Publication number
- JP2006310851A JP2006310851A JP2006118962A JP2006118962A JP2006310851A JP 2006310851 A JP2006310851 A JP 2006310851A JP 2006118962 A JP2006118962 A JP 2006118962A JP 2006118962 A JP2006118962 A JP 2006118962A JP 2006310851 A JP2006310851 A JP 2006310851A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- nitride
- laser
- buffer layer
- sapphire substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 177
- 239000004065 semiconductor Substances 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 47
- 239000010980 sapphire Substances 0.000 claims abstract description 47
- 230000001678 irradiating effect Effects 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 8
- 230000008018 melting Effects 0.000 claims abstract description 4
- 238000002844 melting Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 54
- 238000000926 separation method Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 238000010521 absorption reaction Methods 0.000 claims description 9
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 238000004891 communication Methods 0.000 description 7
- 238000000354 decomposition reaction Methods 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 238000000927 vapour-phase epitaxy Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/18—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by features of a layer of foamed material
- B32B5/20—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by features of a layer of foamed material foamed in situ
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/065—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of foam
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/64—Flat crystals, e.g. plates, strips or discs
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02447—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/10—Properties of the layers or laminate having particular acoustical properties
- B32B2307/102—Insulating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/30—Properties of the layers or laminate having particular thermal properties
- B32B2307/304—Insulating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
- B32B2307/51—Elastic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2419/00—Buildings or parts thereof
- B32B2419/04—Tiles for floors or walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Abstract
【解決手段】本発明は,サファイア基板を備える段階;上記サファイア基板上に、窒化物より高い融点を有し窒化物より高い熱伝導性を有する物質からなるバッファ層を形成する段階;上記バッファ層上に窒化物層を形成する段階;及び上記サファイア基板の下部にレーザを照射し上記窒化物層を分離する段階を含む窒化物層の製造方法を提供する。本発明において上記窒化物層はAlxInyGa(1-x-y)N組成式(ここで、0≦x≦1、0≦y≦1、0≦x+y≦1である)を有する物質で、上記バッファ層はSiCからなることを特徴とする。
【選択図】図2c
Description
サファイア基板を備える段階と、
上記サファイア基板上に、窒化物より高い融点を有し上記窒化物より高い熱伝導性を有する物質からなるバッファ層を形成する段階と、
上記バッファ層上に窒化物層を形成する段階、及び
上記サファイア基板の下部にレーザを照射し上記窒化物層を分離する段階を含む窒化物層の製造方法を提供する。
本発明は、上記窒化物層の製造方法を採用した垂直構造窒化物半導体発光素子の製造方法も提供する。本発明に伴う垂直構造窒化物半導体発光素子の製造方法は、
サファイア基板を備える段階と、
上記サファイア基板上にSiCからなるバッファ層を形成する段階と、
上記バッファ層上にAlxInyGa(1-x-y)N組成式(ここで、0≦x≦1、0≦y≦1、0≦x+y≦1である)を有するn型窒化物半導体層、活性層、p型窒化物半導体層が順次に積層された発光構造物を形成する段階と、
上記p型窒化物半導体層上に導電性キャリア基板を形成する段階、及び
下記の数5のような強度を有するレーザをサファイア基板の下部に照射して上記バッファ層とn型窒化物半導体層の界面で上記発光構造物を分離する段階を含む。
即ち、照射されたレーザが厚さの指数関数で減少するようになる。上記の数6からバッファ層110と窒化物層120との界面までレーザが到達するために照射すべきレーザの強度を下記の数7の通り求めることが可能である。
例えば、レーザリフトオフ工程に使用されるレーザが約105/cmの吸収係数を有する355nm波長のQ-スイッチトNd:YAGレーザを使用してレーザリフトオフ工程を進行し、窒化物層120が300mJ/cm2の強度を有するレーザにより分解され始まるとすると、10nm厚さのバッファ層を利用した場合に、照射すべきレーザ強度は、I=300/e-100000×0.000001≒332mJ/cm2になる。このように、数7を利用してこれで図2dのように、上記バッファ層110と窒化物層120の界面で窒化物層120の分離が発生するようにすることが可能なレーザの強度を計算することが可能である。
上記n型窒化物半導体層221とバッファ層210の界面で分離が起こるようにするためのレーザ強度の設定及びレーザの波長に関する説明は前記の窒化物層製造方法で既に説明した通りであるため省略することとする。
次いで、図5fのように、上記サファイア基板が分離されたn型窒化物半導体層221の下面にn側電極240を形成し、上記キャリア基板230の上面にp側電極250を形成して垂直構造窒化物半導体発光素子を完成する。このような垂直構造窒化物半導体発光素子はサファイア基板が分離されたn型窒化物半導体層221の下面が主発光面として使用される。上記n側電極240とn型窒化物半導体層221との間には電流拡散を改善するためITO等からなる透明電極層が形成され得る。また、上記導電性キャリア基板230が優秀な電気伝導性を有する金属物質からなる場合キャリア基板230自体をp側電極に使用することが可能なため、別途のp側電極250を省略することも可能である。
本発明で採用したレーザリフトオフ工程はバッファ層を犠牲させず、レーザの強度を調節して窒化物層とバッファ層の界面で分離が起こるようにすることにより、窒化物層の分解時発生する熱をバッファ層を通じて放出し熱による窒化物層の劣化を防止することが可能なため、優秀な品質の窒化物層を製造することが可能である。
120 窒化物層 L レーザ
Claims (10)
- サファイア基板を備える段階と、
上記サファイア基板上に、窒化物より高い融点を有し窒化物より高い熱伝導性を有する物質からなるバッファ層を形成する段階と、
上記バッファ層上に窒化物層を形成する段階と、
上記サファイア基板の下部にレーザを照射して上記窒化物層を分離する段階とを含む窒化物層の製造方法。 - 上記バッファ層の厚さは2000Å以下であることを特徴とする請求項1に記載の窒化物層の製造方法。
- 上記バッファ層はSiCからなることを特徴とする請求項1に記載の窒化物層の製造方法。
- 上記窒化物層はAlxInyGa(1-x-y)N組成式(ここで、0≦x≦1、0≦y≦1、0≦x+y≦1である)を有する物質であることを特徴とする請求項1に記載の窒化物層の製造方法。
- 上記窒化物層を分離する段階は、
Iを照射されるレーザの強度、INを窒化物層が分解されるに必要なレーザ強度、αをレーザの吸収係数、Zをバッファ層の厚さとして、下記の数1のような強度を有するレーザをサファイア基板の下部に照射して上記バッファ層と窒化物層の界面で上記窒化物層を分離する段階であることを特徴とする請求項1に記載の窒化物層の製造方法。
- サファイア基板を備える段階と、
上記サファイア基板上にSiCからなるバッファ層を形成する段階と、
上記バッファ層上にAlxInyGa(1-x-y)N組成式(ここで、0≦x≦1、0≦y≦1、0≦x+y≦1である)を有する窒化物層を形成する段階と、
Iを照射されるレーザの強度、INを窒化物層が分解されるに必要なレーザ強度、αをレーザの吸収係数、Zをバッファ層の厚さとして、下記の数2のような強度を有するレーザをサファイア基板の下部に照射して上記バッファ層と窒化物層の界面で上記窒化物層を分離する段階とを含む窒化物層の製造方法。
- サファイア基板を備える段階と、
上記サファイア基板上にSiCからなるバッファ層を形成する段階と、
上記バッファ層上にAlxInyGa(1-x-y)N組成式(ここで、0≦x≦1、0≦y≦1、0≦x+y≦1である)を有するn型窒化物半導体層、活性層、p型窒化物半導体層が順次に積層された発光構造物を形成する段階と、
上記p型窒化物半導体層上に導電性キャリア基板を形成する段階と、
Iを照射されるレーザの強度、INをn型窒化物半導体層が分解されるに必要なレーザ強度、αをレーザの吸収係数、Zをバッファ層の厚さとして、下記の数3のような強度を有するレーザをサファイア基板の下部に照射して上記バッファ層と発光構造物の界面で上記発光構造物を分離する段階とを含む垂直構造窒化物半導体発光素子の製造方法。
- 上記サファイア基板が分離されたn型窒化物半導体層の下面にn側電極を形成する段階と、
上記キャリア基板の上面にp側電極を形成する段階とをさらに含むことを特徴とする請求項7に記載の垂直構造窒化物半導体発光素子の製造方法。 - 上記発光構造物は、
上記n型窒化物半導体層の下部に形成された非ドーピング窒化物半導体層をさらに含むことを特徴とする請求項7に記載の垂直構造窒化物半導体発光素子の製造方法。 - 上記サファイア基板を分離する段階以後、非ドーピング窒化物半導体層を乾式及び湿式蝕刻、化学機械的研磨(chemical mechanical polishing:CMP)で構成されたグループから選択された少なくとも一つの工程を利用して除去する段階をさらに含むことを特徴とする請求項9に記載の垂直構造窒化物半導体発光素子の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050034351A KR100665173B1 (ko) | 2005-04-26 | 2005-04-26 | 질화물층의 제조방법 및 이를 이용한 수직구조 질화물반도체 발광소자의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006310851A true JP2006310851A (ja) | 2006-11-09 |
JP4592636B2 JP4592636B2 (ja) | 2010-12-01 |
Family
ID=36685737
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006118962A Active JP4592636B2 (ja) | 2005-04-26 | 2006-04-24 | 窒化物層の製造方法及びこれを用いた垂直構造窒化物半導体発光素子の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7524692B2 (ja) |
EP (1) | EP1717872A3 (ja) |
JP (1) | JP4592636B2 (ja) |
KR (1) | KR100665173B1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008294379A (ja) * | 2007-05-28 | 2008-12-04 | Sanyo Electric Co Ltd | 窒化物系半導体素子の製造方法 |
JP2010056210A (ja) * | 2008-08-27 | 2010-03-11 | Toshiba Corp | 半導体発光素子の製造方法 |
WO2014196437A1 (ja) * | 2013-06-08 | 2014-12-11 | エルシード株式会社 | SiC材料の製造方法及びSiC材料積層体 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101740331B (zh) * | 2008-11-07 | 2012-01-25 | 东莞市中镓半导体科技有限公司 | 利用固体激光器无损剥离GaN与蓝宝石衬底的方法 |
KR101064068B1 (ko) | 2009-02-25 | 2011-09-08 | 엘지이노텍 주식회사 | 발광소자의 제조방법 |
WO2011069242A1 (en) * | 2009-12-09 | 2011-06-16 | Cooledge Lighting Inc. | Semiconductor dice transfer-enabling apparatus and method for manufacturing transfer-enabling apparatus |
US20110151588A1 (en) * | 2009-12-17 | 2011-06-23 | Cooledge Lighting, Inc. | Method and magnetic transfer stamp for transferring semiconductor dice using magnetic transfer printing techniques |
US8334152B2 (en) * | 2009-12-18 | 2012-12-18 | Cooledge Lighting, Inc. | Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate |
CN102064255A (zh) * | 2010-12-10 | 2011-05-18 | 西安神光安瑞光电科技有限公司 | 发光二极管及其制造方法 |
JP2013110137A (ja) * | 2011-11-17 | 2013-06-06 | Disco Abrasive Syst Ltd | 光デバイス層の移替装置およびレーザー加工機 |
CN103824905A (zh) * | 2014-02-24 | 2014-05-28 | 无锡晶凯科技有限公司 | 一种氮化镓led蓝宝石衬底柔性电子应用的激光剥离方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003218470A (ja) * | 2001-11-13 | 2003-07-31 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6649494B2 (en) * | 2001-01-29 | 2003-11-18 | Matsushita Electric Industrial Co., Ltd. | Manufacturing method of compound semiconductor wafer |
US7029939B2 (en) * | 2001-06-18 | 2006-04-18 | Toyoda Gosei Co., Ltd. | P-type semiconductor manufacturing method and semiconductor device |
CA2466141C (en) * | 2002-01-28 | 2012-12-04 | Nichia Corporation | Nitride semiconductor device having support substrate and its manufacturing method |
KR101030068B1 (ko) * | 2002-07-08 | 2011-04-19 | 니치아 카가쿠 고교 가부시키가이샤 | 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자 |
JP4830315B2 (ja) * | 2004-03-05 | 2011-12-07 | 日亜化学工業株式会社 | 半導体レーザ素子 |
-
2005
- 2005-04-26 KR KR1020050034351A patent/KR100665173B1/ko active IP Right Grant
-
2006
- 2006-04-24 JP JP2006118962A patent/JP4592636B2/ja active Active
- 2006-04-25 US US11/410,052 patent/US7524692B2/en active Active
- 2006-04-26 EP EP06252227A patent/EP1717872A3/en not_active Withdrawn
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003218470A (ja) * | 2001-11-13 | 2003-07-31 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008294379A (ja) * | 2007-05-28 | 2008-12-04 | Sanyo Electric Co Ltd | 窒化物系半導体素子の製造方法 |
JP2010056210A (ja) * | 2008-08-27 | 2010-03-11 | Toshiba Corp | 半導体発光素子の製造方法 |
JP4599442B2 (ja) * | 2008-08-27 | 2010-12-15 | 株式会社東芝 | 半導体発光素子の製造方法 |
US8329489B2 (en) | 2008-08-27 | 2012-12-11 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor light emitting device |
US8470627B2 (en) | 2008-08-27 | 2013-06-25 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor light emitting device |
US9059374B2 (en) | 2008-08-27 | 2015-06-16 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
WO2014196437A1 (ja) * | 2013-06-08 | 2014-12-11 | エルシード株式会社 | SiC材料の製造方法及びSiC材料積層体 |
Also Published As
Publication number | Publication date |
---|---|
US20060292718A1 (en) | 2006-12-28 |
EP1717872A2 (en) | 2006-11-02 |
KR100665173B1 (ko) | 2007-01-09 |
JP4592636B2 (ja) | 2010-12-01 |
KR20060112013A (ko) | 2006-10-31 |
EP1717872A3 (en) | 2012-08-22 |
US7524692B2 (en) | 2009-04-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4592636B2 (ja) | 窒化物層の製造方法及びこれを用いた垂直構造窒化物半導体発光素子の製造方法 | |
JP5167384B2 (ja) | 基板の分割方法 | |
US8088637B1 (en) | Method of manufacturing a semiconductor device including a superlattice strain relief layer | |
US7435994B2 (en) | Semiconductor device and method for fabricating the same | |
KR101082788B1 (ko) | 다공성 질화물 반도체 상의 고품질 비극성/반극성 반도체 소자 및 그 제조 방법 | |
KR101361630B1 (ko) | 방사선 방출 반도체 칩의 제조 방법 | |
EP1990841A2 (en) | Superlattice strain relief layer for semiconductor devices | |
US20040065889A1 (en) | Semiconductor wafer, semiconductor device, and methods for fabricating the same | |
KR19980079320A (ko) | 고품질 쥐에이엔계층의 선택성장방법, 고품질 쥐에이엔계층 성장기판 및 고품질 쥐에이엔계층 성장기판상에 제작하는 반도체디바이스 | |
US7759219B2 (en) | Method of manufacturing nitride semiconductor device | |
KR20120032258A (ko) | 질화갈륨계 반도체소자 및 그 제조방법 | |
KR20070095364A (ko) | 질화물 반도체 소자, 질화물 반도체 결정층의 성장 방법 및 질화물 반도체 발광 소자의 제법 | |
US9490119B2 (en) | Fabrication of thin-film devices using selective area epitaxy | |
JP2016184747A (ja) | オプトエレクトロニクス半導体チップ | |
WO2005088687A1 (ja) | 窒化ガリウム系半導体基板の作製方法 | |
JP2016058693A (ja) | 半導体装置、半導体ウェーハ、及び、半導体装置の製造方法 | |
US20130032821A1 (en) | Schottky barrier diode and method for manufacturing the same | |
JP7023882B2 (ja) | 半導体装置の製造方法、基板の製造方法、半導体装置、基板、及び、基板の製造装置 | |
US6797532B2 (en) | Semiconductor device and method for manufacturing the same | |
CN111463326B (zh) | 半导体器件及其制备方法 | |
US8383494B2 (en) | Method for forming buffer layer for GaN single crystal | |
JP2005303250A (ja) | 半導体装置及びその製造方法 | |
KR20130008281A (ko) | 파워소자의 제조방법 | |
JP2014500842A (ja) | 基板上に成長したiii族窒化物層 | |
JP2006179623A (ja) | 窒化物半導体基板の製造方法および窒化物半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090512 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20090812 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20090817 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090911 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100817 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100914 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130924 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4592636 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20100930 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101021 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130924 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130924 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
A072 | Dismissal of procedure [no reply to invitation to correct request for examination] |
Free format text: JAPANESE INTERMEDIATE CODE: A072 Effective date: 20110301 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130924 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
S631 | Written request for registration of reclamation of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313631 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130924 Year of fee payment: 3 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
S631 | Written request for registration of reclamation of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313631 |
|
S633 | Written request for registration of reclamation of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313633 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130924 Year of fee payment: 3 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130924 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130924 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |