JP2006295059A - 半導体装置およびその製造方法 - Google Patents
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Abstract
【解決手段】 アイランド30の上に、第2の半導体素子20、第1の半導体素子10が順次積層されて搭載されており、これら両半導体素子10、20は接着剤70にて接着され、また、これら両半導体素子10、20とリード部40とがボンディングワイヤ70により電気的に接続され、これらのものがモールド樹脂60にて封止されている。ここにおいて、上段の第1の半導体素子10は、半導体ウェハ200から分断された2以上の複数のチップ単位Tの集合体として構成されている。
【選択図】 図2
Description
本実施形態の半導体装置100は、大きくは、第1の半導体素子10と、第2の半導体素子20と、これら両半導体素子10、20を搭載するチップ搭載部30と、チップ搭載部30の周囲に設けられ各半導体素子10、20にボンディングワイヤ50を介して電気的に接続されたリード部材40と、両半導体素子10、20、チップ搭載部30およびリード部材40を封止するモールド樹脂60とを備えて構成されている。
上記図1および図2に示される半導体装置100は、たとえば、次のようにして製造することができる。
ところで、本実施形態によれば、半導体ウェハ200に対してチップ単位Tに半導体素子10を形成した後、半導体ウェハ200を分断するようにした半導体装置の製造方法において、半導体ウェハ200を分断するとき、分断する単位を1チップ単位T以上にて可変とすることを特徴とする製造方法が提供される。
なお、上記実施形態では、複数個の半導体素子10、20が積層されたスタック構造のMCPという熱抵抗の高いパッケージについて、熱特性が改善された例を示したが、本発明は、それ以外にも、シングルチップパッケージ、並列マルチチップパッケージ(並列MCP)、放熱板付きパッケージなど熱抵抗の低いパッケージに対しても適用できる。
30…チップ搭載部としてのリードフレームのアイランド、
40…リード部材としてのリードフレームのリード部、
50…ボンディングワイヤ、60…モールド樹脂、200…半導体ウェハ。
Claims (8)
- 半導体ウェハ(200)に対してチップ単位に半導体素子(10)を形成した後、前記半導体ウェハ(200)を分断するようにした半導体装置の製造方法において、
前記半導体ウェハ(200)を分断するとき、分断する単位を1チップ単位以上にて可変とすることを特徴とする半導体装置の製造方法。 - 前記半導体ウェハ(200)を分断することにより形成された前記半導体素子(10)を、チップ搭載部(30)に搭載するとともに、前記半導体素子(10)と前記半導体素子(10)の周囲に設けられたリード部材(40)とを電気的に接続した後、
前記半導体素子(10)、前記チップ搭載部(30)および前記リード部材(40)をモールド樹脂(60)により封止することを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記半導体素子(10)と前記リード部材(40)との電気的接続を、ワイヤボンディングにより行うことを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記半導体ウェハ(200)を分断することにより形成された前記半導体素子(10)を第1の半導体素子(10)として用意し、前記第1の半導体素子(10)とは別体の第2の半導体素子(20)を用意し、
前記チップ搭載部(30)の上に前記第2の半導体素子(20)を搭載し、この第2の半導体素子(20)の上に前記第1の半導体素子(10)を積層して接着した後、
前記第1の半導体素子(10)と前記リード部材(40)とをワイヤボンディングにより電気的に接続することを特徴とする請求項2に記載の半導体装置の製造方法。 - チップ単位に半導体素子(10)が形成された半導体ウェハ(200)を分断してなる半導体装置において、
前記半導体素子(10)は、2以上のチップ単位にて分断されたものであることを特徴とする半導体装置。 - 前記半導体素子(10)はチップ搭載部(30)に搭載されており、
前記半導体素子(10)の周囲には、前記半導体素子(10)と電気的に接続されたリード部材(40)が設けられており、
前記半導体素子(10)、前記チップ搭載部(30)および前記リード部材(40)は、モールド樹脂(60)により封止されていることを特徴とする請求項5に記載の半導体装置。 - 前記半導体素子(10)と前記リード部材(40)との電気的接続は、ワイヤボンディングにより行われていることを特徴とする請求項6に記載の半導体装置。
- 前記半導体素子(10)を第1の半導体素子(10)として、この第1の半導体素子(10)とは別体の第2の半導体素子(20)が、前記チップ搭載部(30)の上に搭載されており、
前記第1の半導体素子(10)は、前記第2の半導体素子(20)の上に積層されて接着されており、
前記第1の半導体素子(10)と前記リード部材(40)とはワイヤボンディングにより電気的に接続されていることを特徴とする請求項6に記載の半導体装置。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009017070A1 (ja) * | 2007-07-27 | 2009-02-05 | Nikon Corporation | 積層型半導体装置 |
JP2009027073A (ja) * | 2007-07-23 | 2009-02-05 | Elpida Memory Inc | 積層メモリ |
JP2015528444A (ja) * | 2012-08-17 | 2015-09-28 | 韓国生産技術研究院Korea Institute Of Industrial Technology | 複数のゲストガスと水とを反応させてガスハイドレートを製造する方法 |
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JP2003197857A (ja) * | 2001-12-28 | 2003-07-11 | Seiko Epson Corp | 半導体装置及びその製造方法、回路基板並びに電子機器 |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009027073A (ja) * | 2007-07-23 | 2009-02-05 | Elpida Memory Inc | 積層メモリ |
WO2009017070A1 (ja) * | 2007-07-27 | 2009-02-05 | Nikon Corporation | 積層型半導体装置 |
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US8299848B2 (en) | 2007-07-27 | 2012-10-30 | Nikon Corporation | Multi-layered semiconductor apparatus |
US8436680B2 (en) | 2007-07-27 | 2013-05-07 | Nikon Corporation | Multi-layered semiconductor apparatus |
CN103219326A (zh) * | 2007-07-27 | 2013-07-24 | 株式会社尼康 | 层叠型半导体器件 |
JP5600939B2 (ja) * | 2007-07-27 | 2014-10-08 | 株式会社ニコン | 積層型半導体装置 |
JP2015528444A (ja) * | 2012-08-17 | 2015-09-28 | 韓国生産技術研究院Korea Institute Of Industrial Technology | 複数のゲストガスと水とを反応させてガスハイドレートを製造する方法 |
US9695374B2 (en) | 2012-08-17 | 2017-07-04 | Korea Institute Of Industrial Technology | Method for producing gas hydrate by reacting plurality of guest gases and water |
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